JP5871978B2 - Polishing pad and manufacturing method thereof - Google Patents
Polishing pad and manufacturing method thereof Download PDFInfo
- Publication number
- JP5871978B2 JP5871978B2 JP2014051954A JP2014051954A JP5871978B2 JP 5871978 B2 JP5871978 B2 JP 5871978B2 JP 2014051954 A JP2014051954 A JP 2014051954A JP 2014051954 A JP2014051954 A JP 2014051954A JP 5871978 B2 JP5871978 B2 JP 5871978B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing pad
- group
- isocyanate
- polyurethane resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims description 160
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229920005749 polyurethane resin Polymers 0.000 claims description 43
- 239000006260 foam Substances 0.000 claims description 38
- 125000005370 alkoxysilyl group Chemical group 0.000 claims description 31
- 239000012948 isocyanate Substances 0.000 claims description 29
- 150000002513 isocyanates Chemical class 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000004970 Chain extender Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 10
- 229920001296 polysiloxane Polymers 0.000 claims description 10
- 239000006185 dispersion Substances 0.000 claims description 9
- 239000004094 surface-active agent Substances 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 125000002947 alkylene group Chemical group 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 51
- 235000012431 wafers Nutrition 0.000 description 30
- 238000000034 method Methods 0.000 description 23
- 239000002002 slurry Substances 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 21
- 238000003756 stirring Methods 0.000 description 19
- 229920005862 polyol Polymers 0.000 description 15
- 150000003077 polyols Chemical class 0.000 description 15
- 239000000203 mixture Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- -1 diisocyanate compound Chemical class 0.000 description 10
- 238000005187 foaming Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229920002635 polyurethane Polymers 0.000 description 9
- 239000004814 polyurethane Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000004745 nonwoven fabric Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- IBOFVQJTBBUKMU-UHFFFAOYSA-N 4,4'-methylene-bis-(2-chloroaniline) Chemical compound C1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1 IBOFVQJTBBUKMU-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229920001971 elastomer Polymers 0.000 description 5
- 230000005484 gravity Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229920001223 polyethylene glycol Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 5
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000004721 Polyphenylene oxide Substances 0.000 description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 229920000768 polyamine Polymers 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 229920000570 polyether Polymers 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000007790 scraping Methods 0.000 description 4
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 241001112258 Moca Species 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000012295 chemical reaction liquid Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000003522 acrylic cement Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 125000005442 diisocyanate group Chemical group 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229920001610 polycaprolactone Polymers 0.000 description 2
- 239000004632 polycaprolactone Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- YPFDHNVEDLHUCE-UHFFFAOYSA-N propane-1,3-diol Chemical compound OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 2
- 125000005372 silanol group Chemical group 0.000 description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 2
- AVWRKZWQTYIKIY-UHFFFAOYSA-N urea-1-carboxylic acid Chemical group NC(=O)NC(O)=O AVWRKZWQTYIKIY-UHFFFAOYSA-N 0.000 description 2
- HOVAGTYPODGVJG-UVSYOFPXSA-N (3s,5r)-2-(hydroxymethyl)-6-methoxyoxane-3,4,5-triol Chemical compound COC1OC(CO)[C@@H](O)C(O)[C@H]1O HOVAGTYPODGVJG-UVSYOFPXSA-N 0.000 description 1
- ZWVMLYRJXORSEP-UHFFFAOYSA-N 1,2,6-Hexanetriol Chemical compound OCCCCC(O)CO ZWVMLYRJXORSEP-UHFFFAOYSA-N 0.000 description 1
- ZTNJGMFHJYGMDR-UHFFFAOYSA-N 1,2-diisocyanatoethane Chemical compound O=C=NCCN=C=O ZTNJGMFHJYGMDR-UHFFFAOYSA-N 0.000 description 1
- RTTZISZSHSCFRH-UHFFFAOYSA-N 1,3-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC(CN=C=O)=C1 RTTZISZSHSCFRH-UHFFFAOYSA-N 0.000 description 1
- VGHSXKTVMPXHNG-UHFFFAOYSA-N 1,3-diisocyanatobenzene Chemical compound O=C=NC1=CC=CC(N=C=O)=C1 VGHSXKTVMPXHNG-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- OHLKMGYGBHFODF-UHFFFAOYSA-N 1,4-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=C(CN=C=O)C=C1 OHLKMGYGBHFODF-UHFFFAOYSA-N 0.000 description 1
- ALQLPWJFHRMHIU-UHFFFAOYSA-N 1,4-diisocyanatobenzene Chemical compound O=C=NC1=CC=C(N=C=O)C=C1 ALQLPWJFHRMHIU-UHFFFAOYSA-N 0.000 description 1
- CDMDQYCEEKCBGR-UHFFFAOYSA-N 1,4-diisocyanatocyclohexane Chemical compound O=C=NC1CCC(N=C=O)CC1 CDMDQYCEEKCBGR-UHFFFAOYSA-N 0.000 description 1
- SBJCUZQNHOLYMD-UHFFFAOYSA-N 1,5-Naphthalene diisocyanate Chemical compound C1=CC=C2C(N=C=O)=CC=CC2=C1N=C=O SBJCUZQNHOLYMD-UHFFFAOYSA-N 0.000 description 1
- ATOUXIOKEJWULN-UHFFFAOYSA-N 1,6-diisocyanato-2,2,4-trimethylhexane Chemical compound O=C=NCCC(C)CC(C)(C)CN=C=O ATOUXIOKEJWULN-UHFFFAOYSA-N 0.000 description 1
- 229940008841 1,6-hexamethylene diisocyanate Drugs 0.000 description 1
- LFSYUSUFCBOHGU-UHFFFAOYSA-N 1-isocyanato-2-[(4-isocyanatophenyl)methyl]benzene Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=CC=C1N=C=O LFSYUSUFCBOHGU-UHFFFAOYSA-N 0.000 description 1
- ICVIFRMLTBUBGF-UHFFFAOYSA-N 2,2,6,6-tetrakis(hydroxymethyl)cyclohexan-1-ol Chemical compound OCC1(CO)CCCC(CO)(CO)C1O ICVIFRMLTBUBGF-UHFFFAOYSA-N 0.000 description 1
- PISLZQACAJMAIO-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine Chemical compound CCC1=CC(C)=C(N)C(CC)=C1N PISLZQACAJMAIO-UHFFFAOYSA-N 0.000 description 1
- HQCHAOKWWKLXQH-UHFFFAOYSA-N 2,6-Dichloro-para-phenylenediamine Chemical compound NC1=CC(Cl)=C(N)C(Cl)=C1 HQCHAOKWWKLXQH-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- BSYVFGQQLJNJJG-UHFFFAOYSA-N 2-[2-(2-aminophenyl)sulfanylethylsulfanyl]aniline Chemical compound NC1=CC=CC=C1SCCSC1=CC=CC=C1N BSYVFGQQLJNJJG-UHFFFAOYSA-N 0.000 description 1
- TXDBDYPHJXUHEO-UHFFFAOYSA-N 2-methyl-4,6-bis(methylsulfanyl)benzene-1,3-diamine Chemical compound CSC1=CC(SC)=C(N)C(C)=C1N TXDBDYPHJXUHEO-UHFFFAOYSA-N 0.000 description 1
- SXFJDZNJHVPHPH-UHFFFAOYSA-N 3-methylpentane-1,5-diol Chemical compound OCCC(C)CCO SXFJDZNJHVPHPH-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- RQEOBXYYEPMCPJ-UHFFFAOYSA-N 4,6-diethyl-2-methylbenzene-1,3-diamine Chemical compound CCC1=CC(CC)=C(N)C(C)=C1N RQEOBXYYEPMCPJ-UHFFFAOYSA-N 0.000 description 1
- PPUHQXZSLCCTAN-UHFFFAOYSA-N 4-[(4-amino-2,3-dichlorophenyl)methyl]-2,3-dichloroaniline Chemical compound ClC1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1Cl PPUHQXZSLCCTAN-UHFFFAOYSA-N 0.000 description 1
- QJENIOQDYXRGLF-UHFFFAOYSA-N 4-[(4-amino-3-ethyl-5-methylphenyl)methyl]-2-ethyl-6-methylaniline Chemical compound CC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(C)C=2)=C1 QJENIOQDYXRGLF-UHFFFAOYSA-N 0.000 description 1
- AOFIWCXMXPVSAZ-UHFFFAOYSA-N 4-methyl-2,6-bis(methylsulfanyl)benzene-1,3-diamine Chemical compound CSC1=CC(C)=C(N)C(SC)=C1N AOFIWCXMXPVSAZ-UHFFFAOYSA-N 0.000 description 1
- UPSFTMARMOEBKQ-UHFFFAOYSA-N 5-isocyanato-1-(isocyanatomethyl)-1,3,3-trimethylcyclohexane;isocyanic acid Chemical compound N=C=O.CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 UPSFTMARMOEBKQ-UHFFFAOYSA-N 0.000 description 1
- 101100366707 Arabidopsis thaliana SSL11 gene Proteins 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 241000628997 Flos Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229930195725 Mannitol Natural products 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 101100366562 Panax ginseng SS12 gene Proteins 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- RTWAGNSZDMDWRF-UHFFFAOYSA-N [1,2,2-tris(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1(CO)CO RTWAGNSZDMDWRF-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- JGCWKVKYRNXTMD-UHFFFAOYSA-N bicyclo[2.2.1]heptane;isocyanic acid Chemical compound N=C=O.N=C=O.C1CC2CCC1C2 JGCWKVKYRNXTMD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- FBPFZTCFMRRESA-GUCUJZIJSA-N galactitol Chemical compound OC[C@H](O)[C@@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-GUCUJZIJSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000594 mannitol Substances 0.000 description 1
- 235000010355 mannitol Nutrition 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- HOVAGTYPODGVJG-UHFFFAOYSA-N methyl beta-galactoside Natural products COC1OC(CO)C(O)C(O)C1O HOVAGTYPODGVJG-UHFFFAOYSA-N 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- FSWDLYNGJBGFJH-UHFFFAOYSA-N n,n'-di-2-butyl-1,4-phenylenediamine Chemical compound CCC(C)NC1=CC=C(NC(C)CC)C=C1 FSWDLYNGJBGFJH-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000002894 organic compounds Chemical group 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002589 poly(vinylethylene) polymer Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 229920000909 polytetrahydrofuran Polymers 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N tolylenediamine group Chemical group CC1=C(C=C(C=C1)N)N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- 238000005809 transesterification reaction Methods 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
- C08G18/3225—Polyamines
- C08G18/3237—Polyamines aromatic
- C08G18/3243—Polyamines aromatic containing two or more aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
- C08G18/3225—Polyamines
- C08G18/325—Polyamines containing secondary or tertiary amino groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/38—Low-molecular-weight compounds having heteroatoms other than oxygen
- C08G18/3855—Low-molecular-weight compounds having heteroatoms other than oxygen having sulfur
- C08G18/3863—Low-molecular-weight compounds having heteroatoms other than oxygen having sulfur containing groups having sulfur atoms between two carbon atoms, the sulfur atoms being directly linked to carbon atoms or other sulfur atoms
- C08G18/3865—Low-molecular-weight compounds having heteroatoms other than oxygen having sulfur containing groups having sulfur atoms between two carbon atoms, the sulfur atoms being directly linked to carbon atoms or other sulfur atoms containing groups having one sulfur atom between two carbon atoms
- C08G18/3868—Low-molecular-weight compounds having heteroatoms other than oxygen having sulfur containing groups having sulfur atoms between two carbon atoms, the sulfur atoms being directly linked to carbon atoms or other sulfur atoms containing groups having one sulfur atom between two carbon atoms the sulfur atom belonging to a sulfide group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
- C08G18/4833—Polyethers containing oxyethylene units
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/71—Monoisocyanates or monoisothiocyanates
- C08G18/718—Monoisocyanates or monoisothiocyanates containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/74—Polyisocyanates or polyisothiocyanates cyclic
- C08G18/76—Polyisocyanates or polyisothiocyanates cyclic aromatic
- C08G18/7614—Polyisocyanates or polyisothiocyanates cyclic aromatic containing only one aromatic ring
- C08G18/7621—Polyisocyanates or polyisothiocyanates cyclic aromatic containing only one aromatic ring being toluene diisocyanate including isomer mixtures
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/83—Chemically modified polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/83—Chemically modified polymers
- C08G18/837—Chemically modified polymers by silicon containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/0061—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof characterized by the use of several polymeric components
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/30—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by mixing gases into liquid compositions or plastisols, e.g. frothing with air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2110/00—Foam properties
- C08G2110/0041—Foam properties having specified density
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2201/00—Foams characterised by the foaming process
- C08J2201/02—Foams characterised by the foaming process characterised by mechanical pre- or post-treatments
- C08J2201/022—Foams characterised by the foaming process characterised by mechanical pre- or post-treatments premixing or pre-blending a part of the components of a foamable composition, e.g. premixing the polyol with the blowing agent, surfactant and catalyst and only adding the isocyanate at the time of foaming
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2205/00—Foams characterised by their properties
- C08J2205/04—Foams characterised by their properties characterised by the foam pores
- C08J2205/052—Closed cells, i.e. more than 50% of the pores are closed
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2207/00—Foams characterised by their intended use
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2375/00—Characterised by the use of polyureas or polyurethanes; Derivatives of such polymers
- C08J2375/04—Polyurethanes
- C08J2375/08—Polyurethanes from polyethers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/10—Block- or graft-copolymers containing polysiloxane sequences
- C08J2483/12—Block- or graft-copolymers containing polysiloxane sequences containing polyether sequences
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polyurethanes Or Polyureas (AREA)
Description
本発明はレンズ、反射ミラー等の光学材料やシリコンウエハ、ハードディスク用のガラス基板、アルミ基板、及び一般的な金属研磨加工等の高度の表面平坦性を要求される材料の平坦化加工を安定、かつ高い研磨効率で行うことが可能な研磨パッドに関するものである。本発明の研磨パッドは、特にシリコンウエハ並びにその上に酸化物層、金属層等が形成されたデバイスを、さらにこれらの酸化物層や金属層を積層・形成する前に平坦化する工程に好適に使用される。 The present invention stabilizes flattening processing of optical materials such as lenses and reflecting mirrors, silicon wafers, glass substrates for hard disks, aluminum substrates, and materials that require high surface flatness such as general metal polishing processing, In addition, the present invention relates to a polishing pad that can be performed with high polishing efficiency. The polishing pad of the present invention is particularly suitable for a step of planarizing a silicon wafer and a device having an oxide layer, a metal layer, etc. formed thereon, before further laminating and forming these oxide layers and metal layers. Used for.
高度の表面平坦性を要求される材料の代表的なものとしては、半導体集積回路(IC、LSI)を製造するシリコンウエハと呼ばれる単結晶シリコンの円盤があげられる。シリコンウエハは、IC、LSI等の製造工程において、回路形成に使用する各種薄膜の信頼できる半導体接合を形成するために、酸化物層や金属層を積層・形成する各工程において、表面を高精度に平坦に仕上げることが要求される。このような研磨仕上げ工程においては、一般的に研磨パッドはプラテンと呼ばれる回転可能な支持円盤に固着され、半導体ウエハ等の加工物は研磨ヘッドに固着される。そして双方の運動により、プラテンと研磨ヘッドとの間に相対速度を発生させ、さらに砥粒を含む研磨スラリーを研磨パッド上に連続供給することにより、研磨操作が実行される。 A typical material that requires high surface flatness is a single crystal silicon disk called a silicon wafer for manufacturing a semiconductor integrated circuit (IC, LSI). Silicon wafers have a highly accurate surface in each process of stacking and forming oxide layers and metal layers in order to form reliable semiconductor junctions of various thin films used for circuit formation in IC, LSI, and other manufacturing processes. It is required to finish flat. In such a polishing finishing process, a polishing pad is generally fixed to a rotatable support disk called a platen, and a workpiece such as a semiconductor wafer is fixed to a polishing head. A polishing operation is performed by generating a relative speed between the platen and the polishing head by both movements, and continuously supplying a polishing slurry containing abrasive grains onto the polishing pad.
研磨パッドの研磨特性としては、研磨対象物の平坦性(プラナリティ)及び面内均一性に優れ、研磨速度が大きいことが要求される。研磨対象物の平坦性、面内均一性については研磨層を高弾性率化することによりある程度は改善できる。また、研磨速度については、研磨層を発泡体にしてスラリーの保持量を多くしたり、研磨層を親水性にしてスラリーの保持能力を高めることにより向上できる。 As the polishing characteristics of the polishing pad, it is required that the polishing object has excellent flatness (planarity) and in-plane uniformity and has a high polishing rate. The flatness and in-plane uniformity of the object to be polished can be improved to some extent by increasing the elastic modulus of the polishing layer. The polishing rate can be improved by making the polishing layer a foam to increase the holding amount of the slurry, or making the polishing layer hydrophilic to increase the holding ability of the slurry.
例えば、特許文献1では、研磨パッドの水の濡れ性を向上させるために、(A)架橋エラストマーと、(B)カルボキシル基、アミノ基、ヒドロキシル基、エポキシ基、スルホン酸基及びリン酸基の群から選ばれる少なくとも1種の官能基を有する物質と、水溶性物質とを含有し、かつ、上記(A)架橋エラストマーが、1,2−ポリブタジエンを架橋させた重合体であることを特徴とする研磨パッド用組成物、が提案されている。 For example, in Patent Document 1, in order to improve water wettability of a polishing pad, (A) a crosslinked elastomer and (B) a carboxyl group, an amino group, a hydroxyl group, an epoxy group, a sulfonic acid group, and a phosphoric acid group. Characterized in that it contains a substance having at least one functional group selected from the group and a water-soluble substance, and (A) the crosslinked elastomer is a polymer obtained by crosslinking 1,2-polybutadiene. A polishing pad composition has been proposed.
また、特許文献2では、研磨パッドにスラリーをなじみやすくするために、親水性基を有する化合物が共重合されたウレタン樹脂を含有し、かつ親水剤を含有するポリウレタン組成物よりなる研磨パッドであって、該親水剤が、2,4,7,9−テトラメチル−5−デシン−4,7−ジオール−ジポリオキシエチレンエーテル、及び2,4,7、9−テトラメチル−5−デシン−4,7−ジオールからなる群から選択された少なくとも一種であり、該親水性基を有する化合物がエチレンオキサイドモノマーである研磨パッド、が提案されている。 Further, Patent Document 2 is a polishing pad made of a polyurethane composition containing a urethane resin in which a compound having a hydrophilic group is copolymerized and containing a hydrophilic agent in order to make the slurry easily compatible with the polishing pad. The hydrophilic agent is 2,4,7,9-tetramethyl-5-decyne-4,7-diol-dipolyoxyethylene ether and 2,4,7,9-tetramethyl-5-decyne- There has been proposed a polishing pad that is at least one selected from the group consisting of 4,7-diol, and wherein the compound having a hydrophilic group is an ethylene oxide monomer.
また、特許文献3では、平坦性、面内均一性、研磨速度が良好であり、研磨速度の変化が少なく、さらに寿命特性に優れる研磨パッドを得るために、ポリウレタン樹脂発泡体の原料成分の1つとして、エチレンオキサイド単位(−CH2CH2O−)を25重量%以上有する数平均分子量500以上の親水性高分子量ポリオール成分とイソシアネート成分とを原料成分として含有してなる親水性イソシアネート末端プレポリマー(B)を用いることが提案されている。 In Patent Document 3, in order to obtain a polishing pad having good flatness, in-plane uniformity, polishing rate, little change in polishing rate, and excellent life characteristics, it is one of the raw material components of polyurethane resin foam. As a starting material, a hydrophilic isocyanate-terminated prepolymer comprising a hydrophilic high molecular weight polyol component having an ethylene oxide unit (—CH 2 CH 2 O—) of 25% by weight or more and a number average molecular weight of 500 or more and an isocyanate component as raw material components. It has been proposed to use polymer (B).
また、特許文献4では、研磨層の親水性を向上させるために、研磨層を構成する樹脂を溶解可能な有機溶媒に溶解可能であり、水に難溶ないし不溶の部分アシル化多糖類成分が含有された研磨層、が提案されている。 Further, in Patent Document 4, in order to improve the hydrophilicity of the polishing layer, a resin constituting the polishing layer can be dissolved in an organic solvent that can be dissolved, and a partially acylated polysaccharide component hardly soluble or insoluble in water is used. A contained polishing layer has been proposed.
しかし、研磨層を親水性にすると、研磨速度は大きくなるが、研磨対象物の平坦性が悪くなるという問題があった。 However, when the polishing layer is made hydrophilic, the polishing rate increases, but there is a problem that the flatness of the object to be polished is deteriorated.
本発明は、研磨速度が大きく、かつ平坦化特性に優れる研磨パッド及びその製造方法を提供することを目的とする。 An object of the present invention is to provide a polishing pad having a high polishing rate and excellent planarization characteristics, and a method for producing the same.
本発明者らは前記課題を解決すべく鋭意検討を重ねた結果、下記の研磨パッドにより前記課題を解決できることを見出し、本発明を完成するに至った。 As a result of intensive studies to solve the above problems, the present inventors have found that the above problems can be solved by the following polishing pad, and have completed the present invention.
本発明は、ポリウレタン樹脂発泡体からなる研磨層を有する研磨パッドにおいて、前記ポリウレタン樹脂発泡体の形成材料であるポリウレタン樹脂は、イソシアネート末端プレポリマーのウレタン基又は尿素基と下記一般式(1)で表されるアルコキシシリル基含有イソシアネートのイソシアネート基との反応により、側鎖にアルコキシシリル基が導入されていることを特徴とする研磨パッド、に関する。
(式中、XはOR1又はOHであり、R1はそれぞれ独立に炭素数1〜4のアルキル基であり、R2は炭素数1〜6のアルキレン基である。)
In the polishing pad having a polishing layer made of a polyurethane resin foam, the polyurethane resin as a material for forming the polyurethane resin foam is represented by the following general formula (1): a urethane group or a urea group of an isocyanate-terminated prepolymer; The present invention relates to a polishing pad wherein an alkoxysilyl group is introduced into a side chain by a reaction with an isocyanate group of an alkoxysilyl group-containing isocyanate.
(In the formula, X is OR 1 or OH, R 1 is each independently an alkyl group having 1 to 4 carbon atoms, and R 2 is an alkylene group having 1 to 6 carbon atoms.)
上記のように、本発明は、ポリウレタン樹脂の側鎖にアルコキシシリル基を導入したことに特徴がある。研磨層表面に存在するアルコキシシリル基は、研磨中にスラリー中の水によって加水分解され、研磨層表面にシラノール基が生成する。このシラノール基は親水性であるため研磨層表面の親水性が向上する。その結果、スラリーの保持能力を高めることができ、研磨速度を大きくすることができる。 As described above, the present invention is characterized in that an alkoxysilyl group is introduced into the side chain of the polyurethane resin. The alkoxysilyl group present on the surface of the polishing layer is hydrolyzed by water in the slurry during polishing, and a silanol group is generated on the surface of the polishing layer. Since this silanol group is hydrophilic, the hydrophilicity of the polishing layer surface is improved. As a result, the holding ability of the slurry can be increased, and the polishing rate can be increased.
一方、アルコキシシリル基はポリウレタン樹脂の側鎖に導入されているため、ポリウレタン樹脂はスラリーによって膨潤し難い。また、研磨層内部に存在するアルコキシシリル基は、スラリー中の水に接触し難いため加水分解され難い。そのため、研磨層表面のみを親水化でき、研磨層全体の硬度低下は抑制することができる。その結果、研磨パッドの平坦化特性が低下し難くなる。 On the other hand, since the alkoxysilyl group is introduced into the side chain of the polyurethane resin, the polyurethane resin hardly swells with the slurry. Further, the alkoxysilyl group present in the polishing layer is difficult to be hydrolyzed because it is difficult to contact the water in the slurry. Therefore, only the polishing layer surface can be hydrophilized, and a decrease in hardness of the entire polishing layer can be suppressed. As a result, the planarization characteristics of the polishing pad are unlikely to deteriorate.
前記アルコキシシリル基含有イソシアネートは、3−イソシアネートプロピルトリエトキシシランであることが好ましい。 The alkoxysilyl group-containing isocyanate is preferably 3-isocyanatopropyltriethoxysilane.
また、前記アルコキシシリル基含有イソシアネートの添加量は、イソシアネート末端プレポリマー100重量部に対して1〜10重量部であることが好ましい。アルコキシシリル基はポリウレタン樹脂の側鎖に導入されるため、少量のアルコキシシリル基の導入で親水性が発現する。アルコキシシリル基含有イソシアネートの添加量が1重量部未満の場合には、研磨層表面の親水化が起こりにくくなり、10重量部を超えると研磨特性に優れる研磨層を作製し難くなる傾向にある。 Moreover, it is preferable that the addition amount of the said alkoxysilyl group containing isocyanate is 1-10 weight part with respect to 100 weight part of isocyanate terminal prepolymers. Since the alkoxysilyl group is introduced into the side chain of the polyurethane resin, hydrophilicity is exhibited by the introduction of a small amount of the alkoxysilyl group. When the addition amount of the alkoxysilyl group-containing isocyanate is less than 1 part by weight, the surface of the polishing layer is hardly hydrophilized, and when it exceeds 10 parts by weight, it tends to be difficult to produce a polishing layer having excellent polishing characteristics.
また本発明は、イソシアネート末端プレポリマーを含む第1成分と鎖延長剤を含む第2成分とを混合し、硬化してポリウレタン樹脂発泡体を作製する工程を含む研磨パッドの製造方法において、
前記工程は、イソシアネート末端プレポリマーを含む第1成分にシリコーン系界面活性剤を第1成分及び第2成分の合計重量に対して0.05〜10重量%になるように添加し、さらに前記第1成分を非反応性気体と撹拌して前記非反応性気体を気泡として分散させた気泡分散液を調製した後、前記気泡分散液に鎖延長剤を含む第2成分を混合し、硬化してポリウレタン樹脂発泡体を作製する工程であり、
前記第2成分は、下記一般式(1)で表されるアルコキシシリル基含有イソシアネートを含有することを特徴とする研磨パッドの製造方法、に関する。
(式中、XはOR1又はOHであり、R1はそれぞれ独立に炭素数1〜4のアルキル基であり、R2は炭素数1〜6のアルキレン基である。)
The present invention also relates to a method for producing a polishing pad comprising a step of mixing a first component containing an isocyanate-terminated prepolymer and a second component containing a chain extender and curing to produce a polyurethane resin foam.
In the step, a silicone-based surfactant is added to the first component containing the isocyanate-terminated prepolymer so as to be 0.05 to 10% by weight with respect to the total weight of the first component and the second component. After preparing a bubble dispersion in which one component is stirred with a non-reactive gas to disperse the non-reactive gas as bubbles, a second component containing a chain extender is mixed in the bubble dispersion and cured. A step of producing a polyurethane resin foam,
The said 2nd component is related with the manufacturing method of the polishing pad characterized by containing the alkoxy silyl group containing isocyanate represented by following General formula (1).
(In the formula, X is OR 1 or OH, R 1 is each independently an alkyl group having 1 to 4 carbon atoms, and R 2 is an alkylene group having 1 to 6 carbon atoms.)
前記製造方法によれば、イソシアネート末端プレポリマーのウレタン基又は尿素基とアルコキシシリル基含有イソシアネートのイソシアネート基との反応によりアロファネート構造又はビュレット構造が形成され、側鎖にアルコキシシリル基が導入されたポリウレタン樹脂を得ることができる。 According to the production method, the polyurethane in which the allophanate structure or the burette structure is formed by the reaction between the urethane group or urea group of the isocyanate-terminated prepolymer and the isocyanate group of the alkoxysilyl group-containing isocyanate, and the alkoxysilyl group is introduced into the side chain. A resin can be obtained.
前記アルコキシシリル基含有イソシアネートは、3−イソシアネートプロピルトリエトキシシランであることが好ましい。 The alkoxysilyl group-containing isocyanate is preferably 3-isocyanatopropyltriethoxysilane.
前記アルコキシシリル基含有イソシアネートの添加量は、イソシアネート末端プレポリマー100重量部に対して1〜10重量部であることが好ましい。 The addition amount of the alkoxysilyl group-containing isocyanate is preferably 1 to 10 parts by weight with respect to 100 parts by weight of the isocyanate-terminated prepolymer.
また本発明は、前記研磨パッドを用いて半導体ウエハの表面を研磨する工程を含む半導体デバイスの製造方法、に関する。 The present invention also relates to a semiconductor device manufacturing method including a step of polishing a surface of a semiconductor wafer using the polishing pad.
本発明の研磨パッドは、研磨速度が大きく、かつ平坦化特性に優れるものである。また、本発明の研磨パッドは、研磨操作時にスラリーによって研磨層表面が親水性に変化するため、スラリー中の砥粒の凝集が起き難くなり、研磨対象物にスクラッチが発生することを効果的に抑制することができる。 The polishing pad of the present invention has a high polishing rate and excellent planarization characteristics. In addition, the polishing pad of the present invention makes the polishing layer surface hydrophilic by the slurry during the polishing operation, so that the aggregation of abrasive grains in the slurry is difficult to occur, and it is effective that scratches are generated on the object to be polished. Can be suppressed.
本発明の研磨パッドは、ポリウレタン樹脂発泡体からなる研磨層のみであってもよく、研磨層と他の層(例えばクッション層など)との積層体であってもよい。 The polishing pad of the present invention may be only a polishing layer made of a polyurethane resin foam, or may be a laminate of a polishing layer and another layer (such as a cushion layer).
前記ポリウレタン樹脂発泡体の形成材料であるポリウレタン樹脂は、イソシアネート末端プレポリマーのウレタン基又は尿素基と下記一般式(1)で表されるアルコキシシリル基含有イソシアネートのイソシアネート基との反応により、側鎖にアルコキシシリル基が導入されている。
(式中、XはOR1又はOHであり、R1はそれぞれ独立に炭素数1〜4のアルキル基であり、R2は炭素数1〜6のアルキレン基である。)
The polyurethane resin, which is a material for forming the polyurethane resin foam, is produced by reacting the urethane group or urea group of the isocyanate-terminated prepolymer with the isocyanate group of the alkoxysilyl group-containing isocyanate represented by the following general formula (1). An alkoxysilyl group is introduced.
(In the formula, X is OR 1 or OH, R 1 is each independently an alkyl group having 1 to 4 carbon atoms, and R 2 is an alkylene group having 1 to 6 carbon atoms.)
前記ポリウレタン樹脂は、イソシアネート末端プレポリマー、上記一般式(1)で表されるアルコキシシリル基含有イソシアネート、及び鎖延長剤を含むポリウレタン原料組成物の反応硬化体であることが好ましい。 The polyurethane resin is preferably a reaction cured product of a polyurethane raw material composition containing an isocyanate-terminated prepolymer, an alkoxysilyl group-containing isocyanate represented by the general formula (1), and a chain extender.
イソシアネート末端プレポリマーは、イソシアネート成分、ポリオール成分(高分子量ポリオール、低分子量ポリオール)などを含むプレポリマー原料組成物を反応させることにより得られる。 The isocyanate-terminated prepolymer is obtained by reacting a prepolymer raw material composition containing an isocyanate component, a polyol component (high molecular weight polyol, low molecular weight polyol) and the like.
イソシアネート成分としては、ポリウレタンの分野において公知の化合物を特に限定なく使用できる。イソシアネート成分としては、2,4−トルエンジイソシアネート、2,6−トルエンジイソシアネート、2,2’−ジフェニルメタンジイソシアネート、2,4’−ジフェニルメタンジイソシアネート、4,4’−ジフェニルメタンジイソシアネート、1,5−ナフタレンジイソシアネート、p−フェニレンジイソシアネート、m−フェニレンジイソシアネート、p−キシリレンジイソシアネート、m−キシリレンジイソシアネート等の芳香族ジイソシアネート;エチレンジイソシアネート、2,2,4−トリメチルヘキサメチレンジイソシアネート、1,6−ヘキサメチレンジイソシアネート等の脂肪族ジイソシアネート;1,4−シクロヘキサンジイソシアネート、4,4’−ジシクロへキシルメタンジイソシアネート、イソホロンジイソシアネート、ノルボルナンジイソシアネート等の脂環式ジイソシアネート等が挙げられる。これらは単独で用いてもよく、2種以上を併用してもよい。 As the isocyanate component, a known compound in the field of polyurethane can be used without particular limitation. As the isocyanate component, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 2,2′-diphenylmethane diisocyanate, 2,4′-diphenylmethane diisocyanate, 4,4′-diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, Aromatic diisocyanates such as p-phenylene diisocyanate, m-phenylene diisocyanate, p-xylylene diisocyanate, m-xylylene diisocyanate; ethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 1,6-hexamethylene diisocyanate, etc. Aliphatic diisocyanate; 1,4-cyclohexane diisocyanate, 4,4′-dicyclohexylmethane diisocyanate, isophorone diisocyanate Isocyanate, cycloaliphatic diisocyanates such as norbornane diisocyanate. These may be used alone or in combination of two or more.
イソシアネート成分としては、上記ジイソシアネート化合物の他に、3官能以上の多官能ポリイソシアネート化合物も使用可能である。多官能のイソシアネート化合物としては、デスモジュール−N(バイエル社製)や商品名デュラネート(旭化成工業社製)として一連のジイソシアネートアダクト体化合物が市販されている。 As the isocyanate component, a trifunctional or higher polyfunctional polyisocyanate compound can be used in addition to the diisocyanate compound. As a polyfunctional isocyanate compound, a series of diisocyanate adduct compounds are commercially available as Desmodur-N (manufactured by Bayer) or trade name Duranate (manufactured by Asahi Kasei Kogyo Co., Ltd.).
高分子量ポリオールとしては、ポリウレタンの技術分野において、通常用いられるものを挙げることができる。例えば、ポリテトラメチレンエーテルグリコール、ポリエチレングリコール等に代表されるポリエーテルポリオール、ポリブチレンアジペートに代表されるポリエステルポリオール、ポリカプロラクトンポリオール、ポリカプロラクトンのようなポリエステルグリコールとアルキレンカーボネートとの反応物などで例示されるポリエステルポリカーボネートポリオール、エチレンカーボネートを多価アルコールと反応させ、次いでえられた反応混合物を有機ジカルボン酸と反応させたポリエステルポリカーボネートポリオール、ポリヒドロキシル化合物とアリールカーボネートとのエステル交換反応により得られるポリカーボネートポリオールなどが挙げられる。これらは単独で用いてもよく、2種以上を併用してもよい。 Examples of the high molecular weight polyol include those usually used in the technical field of polyurethane. Examples include polyether polyols typified by polytetramethylene ether glycol, polyethylene glycol, etc., polyester polyols typified by polybutylene adipate, polycaprolactone polyols, reactants of polyester glycols such as polycaprolactone and alkylene carbonate, etc. Polyester polycarbonate polyol obtained by reacting ethylene carbonate with polyhydric alcohol and then reacting the obtained reaction mixture with organic dicarboxylic acid, polycarbonate polyol obtained by transesterification of polyhydroxyl compound and aryl carbonate Etc. These may be used alone or in combination of two or more.
高分子量ポリオールの重量平均分子量は特に限定されないが、得られるポリウレタン樹脂の弾性特性等の観点から、500〜3000であることが好ましい。重量平均分子量が500未満であると、これを用いて得られるポリウレタン樹脂は十分な弾性特性を有さず、脆いポリマーとなり易く、このポリウレタン樹脂からなる研磨パッドが硬くなりすぎ、研磨対象物表面のスクラッチの発生原因となる場合がある。また、摩耗しやすくなるため、研磨パッドの寿命の観点からも好ましくない。一方、重量平均分子量が3000を超えると、これを用いて得られるポリウレタン樹脂からなる研磨パッドが軟らかくなり、十分に満足できるプラナリティを得難くなる。 Although the weight average molecular weight of high molecular weight polyol is not specifically limited, From viewpoints, such as the elastic characteristic of the polyurethane resin obtained, it is preferable that it is 500-3000. When the weight average molecular weight is less than 500, the polyurethane resin obtained by using the polyurethane resin does not have sufficient elastic properties and tends to be a brittle polymer, the polishing pad made of this polyurethane resin becomes too hard, and the surface of the object to be polished is May cause scratches. Moreover, since it becomes easy to wear, it is not preferable from the viewpoint of the life of the polishing pad. On the other hand, when the weight average molecular weight exceeds 3000, a polishing pad made of a polyurethane resin obtained by using this becomes soft and it becomes difficult to obtain a sufficiently satisfactory planarity.
上述した高分子量ポリオールの他に、エチレングリコール、1,2−プロピレングリコール、1,3−プロピレングリコール、1,2−ブタンジオール、1,3−ブタンジオール、1,4−ブタンジオール、2,3−ブタンジオール、1,6−ヘキサンジオール、ネオペンチルグリコール、1,4−シクロヘキサンジメタノール、3−メチル−1,5−ペンタンジオール、ジエチレングリコール、トリエチレングリコール、1,4−ビス(2−ヒドロキシエトキシ)ベンゼン、トリメチロールプロパン、グリセリン、1,2,6−ヘキサントリオール、ペンタエリスリトール、テトラメチロールシクロヘキサン、メチルグルコシド、ソルビトール、マンニトール、ズルシトール、スクロース、2,2,6,6−テトラキス(ヒドロキシメチル)シクロヘキサノール、ジエタノールアミン、N−メチルジエタノールアミン、及びトリエタノールアミン等の低分子量ポリオールを併用することができる。また、エチレンジアミン、トリレンジアミン、ジフェニルメタンジアミン、及びジエチレントリアミン等の低分子量ポリアミンを併用することもできる。また、モノエタノールアミン、2−(2−アミノエチルアミノ)エタノール、及びモノプロパノールアミン等のアルコールアミンを併用することもできる。これら低分子量ポリオール、低分子量ポリアミン等は単独で用いてもよく、2種以上を併用してもよい。 In addition to the high molecular weight polyols described above, ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2,3 -Butanediol, 1,6-hexanediol, neopentyl glycol, 1,4-cyclohexanedimethanol, 3-methyl-1,5-pentanediol, diethylene glycol, triethylene glycol, 1,4-bis (2-hydroxyethoxy) ) Benzene, trimethylolpropane, glycerin, 1,2,6-hexanetriol, pentaerythritol, tetramethylolcyclohexane, methylglucoside, sorbitol, mannitol, dulcitol, sucrose, 2,2,6,6-tetrakis (hydroxymethyl) Cyclohexanol, diethanolamine, N- methyldiethanolamine, and can be used in combination of low molecular weight polyols such as triethanolamine. Moreover, low molecular weight polyamines, such as ethylenediamine, tolylenediamine, diphenylmethanediamine, and diethylenetriamine, can also be used in combination. Also, alcohol amines such as monoethanolamine, 2- (2-aminoethylamino) ethanol, and monopropanolamine can be used in combination. These low molecular weight polyols and low molecular weight polyamines may be used alone or in combination of two or more.
イソシアネート末端プレポリマーは、イソシアネート成分及びポリオール成分などを用い、イソシアネート基(NCO)と活性水素(H*)の当量比(NCO/H*)が通常1.2〜8、好ましくは1.5〜3となる範囲で加熱反応して製造される。 Isocyanate-terminated prepolymer, with an isocyanate component and a polyol component, the equivalent ratio of isocyanate groups (NCO) and the active hydrogen (H *) (NCO / H *) is usually from 1.2 to 8, preferably 1.5 to It is produced by heating reaction in the range of 3.
イソシアネート末端プレポリマーは、分子内にウレタン基を有しており、さらに尿素基を有していてもよい。 The isocyanate-terminated prepolymer has a urethane group in the molecule and may further have a urea group.
上記一般式(1)中、XはOR1であることが好ましい。また、R1はメチル基又はエチル基であることが好ましい。上記一般式(1)で表されるアルコキシシリル基含有イソシアネートとしては、3−イソシアネートプロピルトリエトキシシランを用いることが好ましい。 In the general formula (1), X is preferably OR 1 . R 1 is preferably a methyl group or an ethyl group. As the alkoxysilyl group-containing isocyanate represented by the general formula (1), 3-isocyanatopropyltriethoxysilane is preferably used.
前記アルコキシシリル基含有イソシアネートは、イソシアネート末端プレポリマー100重量部に対して1〜10重量部添加することが好ましく、より好ましくは1〜5重量部である。 The alkoxysilyl group-containing isocyanate is preferably added in an amount of 1 to 10 parts by weight, more preferably 1 to 5 parts by weight, based on 100 parts by weight of the isocyanate-terminated prepolymer.
イソシアネート末端プレポリマーの硬化には鎖延長剤を使用する。鎖延長剤は、少なくとも2個以上の活性水素基を有する有機化合物であり、活性水素基としては、水酸基、第1級もしくは第2級アミノ基、チオール基(SH)等が例示できる。具体的には、4,4’−メチレンビス(o−クロロアニリン)(MOCA)、2,6−ジクロロ−p−フェニレンジアミン、4,4’−メチレンビス(2,3−ジクロロアニリン)、3,5−ビス(メチルチオ)−2,4−トルエンジアミン、3,5−ビス(メチルチオ)−2,6−トルエンジアミン、3,5−ジエチルトルエン−2,4−ジアミン、3,5−ジエチルトルエン−2,6−ジアミン、トリメチレングリコール−ジ−p−アミノベンゾエート、1,2−ビス(2−アミノフェニルチオ)エタン、4,4’−ジアミノ−3,3’−ジエチル−5,5’−ジメチルジフェニルメタン、N,N’−ジ−sec−ブチル−4,4’−ジアミノジフェニルメタン、3,3’−ジエチル−4,4’−ジアミノジフェニルメタン、m−キシリレンジアミン、N,N’−ジ−sec−ブチル−p−フェニレンジアミン、m−フェニレンジアミン、及びp−キシリレンジアミン等に例示されるポリアミン類、あるいは、上述した低分子量ポリオールや低分子量ポリアミンを挙げることができる。これらは1種で用いても、2種以上を混合しても差し支えない。 A chain extender is used to cure the isocyanate-terminated prepolymer. The chain extender is an organic compound having at least two active hydrogen groups, and examples of the active hydrogen group include a hydroxyl group, a primary or secondary amino group, and a thiol group (SH). Specifically, 4,4′-methylenebis (o-chloroaniline) (MOCA), 2,6-dichloro-p-phenylenediamine, 4,4′-methylenebis (2,3-dichloroaniline), 3,5 -Bis (methylthio) -2,4-toluenediamine, 3,5-bis (methylthio) -2,6-toluenediamine, 3,5-diethyltoluene-2,4-diamine, 3,5-diethyltoluene-2 , 6-diamine, trimethylene glycol-di-p-aminobenzoate, 1,2-bis (2-aminophenylthio) ethane, 4,4′-diamino-3,3′-diethyl-5,5′-dimethyl Diphenylmethane, N, N′-di-sec-butyl-4,4′-diaminodiphenylmethane, 3,3′-diethyl-4,4′-diaminodiphenylmethane, m-xyl And polyamines exemplified by N, N'-di-sec-butyl-p-phenylenediamine, m-phenylenediamine, and p-xylylenediamine, or the above-mentioned low molecular weight polyols and low molecular weight polyamines. be able to. These may be used alone or in combination of two or more.
ポリウレタン樹脂発泡体は、溶融法、溶液法など公知のウレタン化技術を応用して製造することができるが、コスト、作業環境などを考慮した場合、溶融法で製造することが好ましい。 The polyurethane resin foam can be produced by applying a known urethanization technique such as a melting method or a solution method, but is preferably produced by a melting method in consideration of cost, work environment, and the like.
鎖延長剤の活性水素基(水酸基、アミノ基)数に対する前記プレポリマーのイソシアネート基数は、前記プレポリマーのウレタン基又は尿素基とアルコキシシリル基含有イソシアネートのイソシアネート基とを効率よく反応させてアロファネート構造又はビュレット構造を形成するために、0.95〜1.00であることが好ましい。 The number of isocyanate groups of the prepolymer relative to the number of active hydrogen groups (hydroxyl group, amino group) of the chain extender is an allophanate structure by efficiently reacting the urethane group or urea group of the prepolymer with the isocyanate group of the alkoxysilyl group-containing isocyanate. Or in order to form a bullet structure, it is preferable that it is 0.95-1.00.
ポリウレタン樹脂発泡体の製造方法としては、中空ビーズを添加させる方法、機械的発泡法(メカニカルフロス法を含む)、化学的発泡法などが挙げられる。 Examples of the method for producing the polyurethane resin foam include a method of adding hollow beads, a mechanical foaming method (including a mechanical floss method), and a chemical foaming method.
特に、ポリアルキルシロキサンとポリエーテルとの共重合体であるシリコーン系界面活性剤を使用した機械的発泡法が好ましい。シリコーン系界面活性剤としては、SH−192及びL−5340(東レダウコーニングシリコーン社製)、B8443、B8465(ゴールドシュミット社製)等が好適な化合物として例示される。シリコーン系界面活性剤は、ポリウレタン原料組成物中に0.05〜10重量%になるように添加することが好ましく、より好ましくは0.1〜5重量%である。 In particular, a mechanical foaming method using a silicone surfactant which is a copolymer of polyalkylsiloxane and polyether is preferable. Examples of the silicone surfactant include SH-192 and L-5340 (manufactured by Toray Dow Corning Silicone), B8443, B8465 (manufactured by Goldschmidt), and the like. The silicone-based surfactant is preferably added to the polyurethane raw material composition so as to be 0.05 to 10% by weight, and more preferably 0.1 to 5% by weight.
必要に応じて、ポリウレタン原料組成物中には、酸化防止剤等の安定剤、滑剤、顔料、充填剤、帯電防止剤、その他の添加剤を加えてもよい。 If necessary, stabilizers such as antioxidants, lubricants, pigments, fillers, antistatic agents, and other additives may be added to the polyurethane raw material composition.
ポリウレタン樹脂発泡体は独立気泡タイプであってもよく、連続気泡タイプであってもよいが、研磨層内部へのスラリーの侵入を防止し、研磨層内部に存在するアルコキシシリル基の加水分解を防止するために、独立気泡タイプであることが好ましい。 The polyurethane resin foam may be a closed cell type or an open cell type, but it prevents the slurry from entering the polishing layer and prevents hydrolysis of the alkoxysilyl groups present in the polishing layer. In order to do so, it is preferable that it is a closed-cell type.
研磨パッド(研磨層)を構成する微細気泡タイプのポリウレタン樹脂発泡体を製造する方法の例について以下に説明する。かかるポリウレタン樹脂発泡体の製造方法は、以下の工程を有する。
1)イソシアネート末端プレポリマーの気泡分散液を作製する発泡工程
イソシアネート末端プレポリマー(第1成分)にシリコーン系界面活性剤を添加し、非反応性気体の存在下で撹拌し、非反応性気体を気泡として分散させて気泡分散液とする。前記プレポリマーが常温で固体の場合には適宜の温度に予熱し、溶融して使用する。
2)アルコキシシリル基含有イソシアネート及び鎖延長剤の混合工程
上記の気泡分散液にアルコキシシリル基含有イソシアネート及び鎖延長剤(第2成分)を添加、混合、撹拌して発泡反応液とする。
3)注型工程
上記の発泡反応液を金型に流し込む。
4)硬化工程
金型に流し込まれた発泡反応液を加熱し、反応硬化させる。
An example of a method for producing a fine cell type polyurethane resin foam constituting the polishing pad (polishing layer) will be described below. The manufacturing method of this polyurethane resin foam has the following processes.
1) Foaming step for producing a cell dispersion of isocyanate-terminated prepolymer A silicone-based surfactant is added to the isocyanate-terminated prepolymer (first component), and the mixture is stirred in the presence of a non-reactive gas to remove the non-reactive gas. Disperse as bubbles to obtain a bubble dispersion. When the prepolymer is solid at normal temperature, it is preheated to an appropriate temperature and melted before use.
2) Mixing step of alkoxysilyl group-containing isocyanate and chain extender An alkoxysilyl group-containing isocyanate and a chain extender (second component) are added to the above cell dispersion, mixed and stirred to obtain a foaming reaction solution.
3) Casting process The above foaming reaction liquid is poured into a mold.
4) Curing process The foaming reaction liquid poured into the mold is heated and reacted and cured.
気泡を形成するために使用される非反応性気体としては、可燃性でないものが好ましく、具体的には窒素、酸素、炭酸ガス、ヘリウムやアルゴン等の希ガスやこれらの混合気体が例示され、乾燥して水分を除去した空気の使用がコスト的にも最も好ましい。 As the non-reactive gas used to form the bubbles, non-flammable gases are preferable, and specific examples include nitrogen, oxygen, carbon dioxide, rare gases such as helium and argon, and mixed gases thereof. The use of air that has been dried to remove moisture is most preferred in terms of cost.
非反応性気体を気泡状にしてシリコーン系界面活性剤を含む第1成分に分散させる撹拌装置としては、公知の撹拌装置は特に限定なく使用可能であり、具体的にはホモジナイザー、ディゾルバー、2軸遊星型ミキサー(プラネタリーミキサー)等が例示される。撹拌装置の撹拌翼の形状も特に限定されないが、ホイッパー型の撹拌翼の使用にて微細気泡が得られ好ましい。 As a stirrer for dispersing the non-reactive gas in the form of bubbles in the first component containing the silicone-based surfactant, a known stirrer can be used without particular limitation. Specifically, a homogenizer, a dissolver, biaxial Examples include a planetary mixer (planetary mixer). The shape of the stirring blade of the stirring device is not particularly limited, but it is preferable to use a whipper type stirring blade because fine bubbles can be obtained.
なお、発泡工程において気泡分散液を作成する撹拌と、混合工程におけるアルコキシシリル基含有イソシアネート及び鎖延長剤を添加して混合する撹拌は、異なる撹拌装置を使用することも好ましい態様である。特に混合工程における撹拌は気泡を形成する撹拌でなくてもよく、大きな気泡を巻き込まない撹拌装置の使用が好ましい。このような撹拌装置としては、遊星型ミキサーが好適である。発泡工程と混合工程の撹拌装置を同一の撹拌装置を使用しても支障はなく、必要に応じて撹拌翼の回転速度を調整する等の撹拌条件の調整を行って使用することも好適である。 In addition, it is also a preferable aspect to use a different stirring apparatus for the stirring which produces a cell dispersion in a foaming process, and the stirring which adds and mixes the alkoxysilyl group containing isocyanate and chain extender in a mixing process. In particular, the stirring in the mixing step may not be stirring that forms bubbles, and it is preferable to use a stirring device that does not involve large bubbles. As such an agitator, a planetary mixer is suitable. There is no problem even if the same stirring device is used as the stirring device for the foaming step and the mixing step, and it is also preferable to adjust the stirring conditions such as adjusting the rotation speed of the stirring blade as necessary. .
ポリウレタン樹脂発泡体の製造方法においては、発泡反応液を型に流し込んで流動しなくなるまで反応した発泡体を、加熱、ポストキュアすることは、発泡体の物理的特性を向上させる効果があり、極めて好適である。金型に発泡反応液を流し込んで直ちに加熱オーブン中に入れてポストキュアを行う条件としてもよく、そのような条件下でもすぐに反応成分に熱が伝達されないので、気泡径が大きくなることはない。硬化反応は、常圧で行うことが気泡形状が安定するために好ましい。 In the method for producing a polyurethane resin foam, heating and post-curing the foam that has reacted until the foaming reaction liquid is poured into the mold and no longer flows has the effect of improving the physical properties of the foam. Is preferred. The foam reaction solution may be poured into the mold and immediately put into a heating oven for post cure, and heat is not immediately transferred to the reaction components under such conditions, so the bubble size does not increase. . The curing reaction is preferably performed at normal pressure because the bubble shape is stable.
ポリウレタン樹脂発泡体において、第3級アミン系等の公知のポリウレタン反応を促進する触媒を使用してもかまわない。触媒の種類、添加量は、混合工程後、所定形状の型に流し込む流動時間を考慮して選択する。 In the polyurethane resin foam, a known catalyst that promotes a polyurethane reaction such as tertiary amine may be used. The type and addition amount of the catalyst are selected in consideration of the flow time for pouring into a mold having a predetermined shape after the mixing step.
ポリウレタン樹脂発泡体の製造は、各成分を計量して容器に投入し、撹拌するバッチ方式であっても、また撹拌装置に各成分と非反応性気体を連続して供給して撹拌し、気泡分散液を送り出して成形品を製造する連続生産方式であってもよい。 Polyurethane resin foam can be manufactured by batch feeding each component into a container and stirring, or by continuously supplying each component and non-reactive gas to the stirring device and stirring, It may be a continuous production method in which a dispersion is sent out to produce a molded product.
また、ポリウレタン樹脂発泡体の原料となるプレポリマーを反応容器に入れ、その後、アルコキシシリル基含有イソシアネート及び鎖延長剤を投入、撹拌後、所定の大きさの注型に流し込みブロックを作製し、そのブロックを鉋状、あるいはバンドソー状のスライサーを用いてスライスする方法、又は前述の注型の段階で、薄いシート状にしても良い。 In addition, a prepolymer that is a raw material of the polyurethane resin foam is put into a reaction vessel, and then an alkoxysilyl group-containing isocyanate and a chain extender are added, stirred, and then poured into a casting mold of a predetermined size to produce a block. A thin sheet may be formed by slicing the block using a saddle-like or band saw-like slicer, or in the above-described casting step.
ポリウレタン樹脂発泡体の平均気泡径は、30〜200μmであることが好ましい。この範囲から逸脱する場合は、研磨後の研磨対象物のプラナリティ(平坦性)が低下する傾向にある。 The average cell diameter of the polyurethane resin foam is preferably 30 to 200 μm. When deviating from this range, the planarity (flatness) of the polished object after polishing tends to decrease.
ポリウレタン樹脂発泡体の硬度は、アスカーD硬度計にて、40〜70度であることが好ましい。アスカーD硬度が40度未満の場合には、研磨対象物のプラナリティが低下し、一方、70度を超える場合は、プラナリティは良好であるが、研磨対象物のユニフォーミティ(均一性)が低下する傾向にある。 The hardness of the polyurethane resin foam is preferably 40 to 70 degrees with an Asker D hardness meter. When the Asker D hardness is less than 40 degrees, the planarity of the object to be polished is lowered. On the other hand, when it exceeds 70 degrees, the planarity is good, but the uniformity (uniformity) of the object to be polished is lowered. There is a tendency.
ポリウレタン樹脂発泡体の比重は、0.5〜1.3であることが好ましい。比重が0.5未満の場合、研磨層の表面強度が低下し、研磨対象物のプラナリティが低下する傾向にある。また、1.3より大きい場合は、研磨層表面の気泡数が少なくなり、プラナリティは良好であるが、研磨速度が低下する傾向にある。 The specific gravity of the polyurethane resin foam is preferably 0.5 to 1.3. When the specific gravity is less than 0.5, the surface strength of the polishing layer decreases, and the planarity of the object to be polished tends to decrease. On the other hand, when the ratio is larger than 1.3, the number of bubbles on the surface of the polishing layer is reduced and planarity is good, but the polishing rate tends to decrease.
本発明の研磨パッド(研磨層)の研磨対象物と接触する研磨表面には、スラリーを保持・更新する表面形状を有することが好ましい。発泡体からなる研磨層は、研磨表面に多くの開口を有し、スラリーを保持・更新する働きを持っているが、更なるスラリーの保持性とスラリーの更新を効率よく行うため、また研磨対象物との吸着による研磨対象物の破壊を防ぐためにも、研磨表面に凹凸構造を有することが好ましい。凹凸構造は、スラリーを保持・更新する形状であれば特に限定されるものではなく、例えば、XY格子溝、同心円状溝、貫通孔、貫通していない穴、多角柱、円柱、螺旋状溝、偏心円状溝、放射状溝、及びこれらの溝を組み合わせたものが挙げられる。また、これらの凹凸構造は規則性のあるものが一般的であるが、スラリーの保持・更新性を望ましいものにするため、ある範囲ごとに溝ピッチ、溝幅、溝深さ等を変化させることも可能である。 The polishing surface of the polishing pad (polishing layer) of the present invention that is in contact with the object to be polished preferably has a surface shape that holds and renews the slurry. The polishing layer made of foam has many openings on the polishing surface and has the function of holding and renewing the slurry. However, in order to more efficiently retain the slurry and renew the slurry, it is also a subject of polishing. In order to prevent destruction of the object to be polished due to adsorption with the object, it is preferable that the polishing surface has an uneven structure. The concavo-convex structure is not particularly limited as long as it is a shape that holds and renews the slurry. Examples include eccentric circular grooves, radial grooves, and combinations of these grooves. In addition, these uneven structures are generally regular, but in order to make the slurry retention and renewability desirable, the groove pitch, groove width, groove depth, etc. should be changed for each range. Is also possible.
前記凹凸構造の作製方法は特に限定されるものではないが、例えば、所定サイズのバイトのような治具を用い機械切削する方法、所定の表面形状を有した金型に樹脂を流しこみ、硬化させることにより作製する方法、所定の表面形状を有したプレス板で樹脂をプレスし作製する方法、フォトリソグラフィを用いて作製する方法、印刷手法を用いて作製する方法、炭酸ガスレーザーなどを用いたレーザー光による作製方法などが挙げられる。 The method for producing the concavo-convex structure is not particularly limited. For example, a method of machine cutting using a jig such as a tool of a predetermined size, pouring a resin into a mold having a predetermined surface shape, and curing. Using a press plate having a predetermined surface shape, a method of producing a resin by pressing, a method of producing using photolithography, a method of producing using a printing technique, a carbon dioxide laser, etc. Examples include a manufacturing method using laser light.
本発明の研磨パッドは、前記研磨層とクッションシートとを貼り合わせたものであってもよい。 The polishing pad of the present invention may be a laminate of the polishing layer and a cushion sheet.
前記クッションシート(クッション層)は、研磨層の特性を補うものである。クッションシートは、CMPにおいて、トレードオフの関係にあるプラナリティとユニフォーミティの両者を両立させるために必要なものである。プラナリティとは、パターン形成時に発生する微小凹凸のある研磨対象物を研磨した時のパターン部の平坦性をいい、ユニフォーミティとは、研磨対象物全体の均一性をいう。研磨層の特性によって、プラナリティを改善し、クッションシートの特性によってユニフォーミティを改善する。本発明の研磨パッドにおいては、クッションシートは研磨層より柔らかいものを用いることが好ましい。 The cushion sheet (cushion layer) supplements the characteristics of the polishing layer. The cushion sheet is necessary for achieving both planarity and uniformity in a trade-off relationship in CMP. Planarity refers to the flatness of a pattern portion when a polishing object having minute irregularities generated during pattern formation is polished, and uniformity refers to the uniformity of the entire polishing object. The planarity is improved by the characteristics of the polishing layer, and the uniformity is improved by the characteristics of the cushion sheet. In the polishing pad of the present invention, it is preferable to use a cushion sheet that is softer than the polishing layer.
前記クッションシートとしては、例えば、ポリエステル不織布、ナイロン不織布、アクリル不織布などの繊維不織布やポリウレタンを含浸したポリエステル不織布のような樹脂含浸不織布、ポリウレタンフォーム、ポリエチレンフォームなどの高分子樹脂発泡体、ブタジエンゴム、イソプレンゴムなどのゴム性樹脂、感光性樹脂などが挙げられる。 Examples of the cushion sheet include a fiber nonwoven fabric such as a polyester nonwoven fabric, a nylon nonwoven fabric, and an acrylic nonwoven fabric, a resin-impregnated nonwoven fabric such as a polyester nonwoven fabric impregnated with polyurethane, a polymer resin foam such as polyurethane foam and polyethylene foam, a butadiene rubber, Examples thereof include rubber resins such as isoprene rubber and photosensitive resins.
研磨層とクッションシートとを貼り合わせる手段としては、例えば、研磨層とクッションシートとを両面テープで挟みプレスする方法が挙げられる。 Examples of means for attaching the polishing layer and the cushion sheet include a method of pressing the polishing layer and the cushion sheet with a double-sided tape.
前記両面テープは、不織布やフィルム等の基材の両面に接着層を設けた一般的な構成を有するものである。クッションシートへのスラリーの浸透等を防ぐことを考慮すると、基材にフィルムを用いることが好ましい。また、接着層の組成としては、例えば、ゴム系接着剤やアクリル系接着剤等が挙げられる。金属イオンの含有量を考慮すると、アクリル系接着剤は、金属イオン含有量が少ないため好ましい。また、研磨層とクッションシートは組成が異なることもあるため、両面テープの各接着層の組成を異なるものとし、各層の接着力を適正化することも可能である。 The double-sided tape has a general configuration in which adhesive layers are provided on both sides of a substrate such as a nonwoven fabric or a film. In consideration of preventing the penetration of the slurry into the cushion sheet, it is preferable to use a film for the substrate. Examples of the composition of the adhesive layer include rubber adhesives and acrylic adhesives. Considering the content of metal ions, an acrylic adhesive is preferable because the metal ion content is low. In addition, since the composition of the polishing layer and the cushion sheet may be different, the composition of each adhesive layer of the double-sided tape can be made different so that the adhesive force of each layer can be optimized.
本発明の研磨パッドは、プラテンと接着する面に両面テープが設けられていてもよい。該両面テープとしては、上述と同様に基材の両面に接着層を設けた一般的な構成を有するものを用いることができる。基材としては、例えば不織布やフィルム等が挙げられる。研磨パッドの使用後のプラテンからの剥離を考慮すれば、基材にフィルムを用いることが好ましい。また、接着層の組成としては、例えば、ゴム系接着剤やアクリル系接着剤等が挙げられる。金属イオンの含有量を考慮すると、アクリル系接着剤は、金属イオン含有量が少ないため好ましい。 The polishing pad of the present invention may be provided with a double-sided tape on the surface to be bonded to the platen. As the double-sided tape, a tape having a general configuration in which an adhesive layer is provided on both surfaces of a base material can be used as described above. As a base material, a nonwoven fabric, a film, etc. are mentioned, for example. In consideration of peeling from the platen after use of the polishing pad, it is preferable to use a film for the substrate. Examples of the composition of the adhesive layer include rubber adhesives and acrylic adhesives. Considering the content of metal ions, an acrylic adhesive is preferable because the metal ion content is low.
半導体デバイスは、前記研磨パッドを用いて半導体ウエハの表面を研磨する工程を経て製造される。半導体ウエハとは、一般にシリコンウエハ上に配線金属及び酸化膜を積層したものである。半導体ウエハの研磨方法、研磨装置は特に制限されず、例えば、図1に示すように研磨パッド(研磨層)1を支持する研磨定盤2と、半導体ウエハ4を支持する支持台(ポリシングヘッド)5とウエハへの均一加圧を行うためのバッキング材と、研磨剤3の供給機構を備えた研磨装置などを用いて行われる。研磨パッド1は、例えば、両面テープで貼り付けることにより、研磨定盤2に装着される。研磨定盤2と支持台5とは、それぞれに支持された研磨パッド1と半導体ウエハ4が対向するように配置され、それぞれに回転軸6、7を備えている。また、支持台5側には、半導体ウエハ4を研磨パッド1に押し付けるための加圧機構が設けてある。研磨に際しては、研磨定盤2と支持台5とを回転させつつ半導体ウエハ4を研磨パッド1に押し付け、スラリーを供給しながら研磨を行う。スラリーの流量、研磨荷重、研磨定盤回転数、及びウエハ回転数は特に制限されず、適宜調整して行う。 The semiconductor device is manufactured through a step of polishing the surface of the semiconductor wafer using the polishing pad. A semiconductor wafer is generally a laminate of a wiring metal and an oxide film on a silicon wafer. The method and apparatus for polishing the semiconductor wafer are not particularly limited. For example, as shown in FIG. 1, a polishing surface plate 2 that supports a polishing pad (polishing layer) 1 and a support table (polishing head) that supports the semiconductor wafer 4. 5 and a polishing apparatus equipped with a backing material for uniformly pressing the wafer and a supply mechanism of the abrasive 3. The polishing pad 1 is attached to the polishing surface plate 2 by attaching it with a double-sided tape, for example. The polishing surface plate 2 and the support base 5 are disposed so that the polishing pad 1 and the semiconductor wafer 4 supported on each of the polishing surface plate 2 and the support table 5 face each other, and are provided with rotating shafts 6 and 7 respectively. Further, a pressurizing mechanism for pressing the semiconductor wafer 4 against the polishing pad 1 is provided on the support base 5 side. In polishing, the semiconductor wafer 4 is pressed against the polishing pad 1 while rotating the polishing surface plate 2 and the support base 5, and polishing is performed while supplying slurry. The flow rate of the slurry, the polishing load, the polishing platen rotation speed, and the wafer rotation speed are not particularly limited and are appropriately adjusted.
これにより半導体ウエハ4の表面の突出した部分が除去されて平坦状に研磨される。その後、ダイシング、ボンディング、パッケージング等することにより半導体デバイスが製造される。半導体デバイスは、演算処理装置やメモリー等に用いられる。 As a result, the protruding portion of the surface of the semiconductor wafer 4 is removed and polished flat. Thereafter, a semiconductor device is manufactured by dicing, bonding, packaging, or the like. The semiconductor device is used for an arithmetic processing device, a memory, and the like.
以下、本発明を実施例により説明するが、本発明はこれら実施例に限定されるものではない。 EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to these Examples.
[測定、評価方法]
(平均気泡径の測定)
作製したポリウレタン樹脂発泡体を厚み1mm以下になるべく薄くミクロトームカッターで平行に切り出したものを測定用試料とした。試料表面を走査型電子顕微鏡(日立サイエンスシステムズ社製、S−3500N)で100倍にて撮影した。そして、画像解析ソフト(MITANIコーポレーション社製、WIN−ROOF)を用いて、任意範囲の全気泡の円相当径を測定し、その測定値から平均気泡径を算出した。
[Measurement and evaluation methods]
(Measurement of average bubble diameter)
A sample for measurement was prepared by cutting the produced polyurethane resin foam in parallel with a microtome cutter as thin as possible to a thickness of 1 mm or less. The sample surface was photographed at 100 times with a scanning electron microscope (S-3500N, manufactured by Hitachi Science Systems). Then, using an image analysis software (WIN-ROOF, manufactured by MITANI Corporation), the equivalent circle diameter of all bubbles in an arbitrary range was measured, and the average bubble diameter was calculated from the measured value.
(比重の測定)
JIS Z8807−1976に準拠して行った。作製したポリウレタン樹脂発泡体を4cm×8.5cmの短冊状(厚み:任意)に切り出したものを比重測定用試料とし、温度23℃±2℃、湿度50%±5%の環境で16時間静置した。測定には比重計(ザルトリウス社製)を用い、比重を測定した。
(Measurement of specific gravity)
This was performed according to JIS Z8807-1976. The produced polyurethane resin foam was cut into a 4 cm × 8.5 cm strip (thickness: arbitrary) and used as a sample for measuring specific gravity, and allowed to stand for 16 hours in an environment of temperature 23 ° C. ± 2 ° C. and humidity 50% ± 5%. I put it. The specific gravity was measured using a hydrometer (manufactured by Sartorius).
(硬度の測定)
JIS K6253−1997に準拠して行った。作製したポリウレタン樹脂発泡体を2cm×2cm(厚み:任意)の大きさに切り出したものを硬度測定用試料とし、温度23℃±2℃、湿度50%±5%の環境で16時間静置した。測定時には、試料を重ね合わせ、厚み6mm以上とした。硬度計(高分子計器社製、アスカーD型硬度計)を用い、硬度を測定した。また、試料を水に48時間浸漬し、その後、試料を取出して表面の水分を軽く拭き取った後、同様の方法で硬度を測定した。
(Measurement of hardness)
This was performed in accordance with JIS K6253-1997. The produced polyurethane resin foam was cut into a size of 2 cm × 2 cm (thickness: arbitrary) and used as a sample for hardness measurement, and was allowed to stand for 16 hours in an environment of temperature 23 ° C. ± 2 ° C. and humidity 50% ± 5%. . At the time of measurement, the samples were overlapped to a thickness of 6 mm or more. The hardness was measured using a hardness meter (manufactured by Kobunshi Keiki Co., Ltd., Asker D type hardness meter). Further, the sample was immersed in water for 48 hours, and then the sample was taken out and lightly wiped off the surface moisture, and then the hardness was measured by the same method.
(研磨特性の評価)
研磨装置としてMAT−ARW−8C1A(MAT(株)製)を用い、作製した研磨パッドを用いて、研磨特性の評価を行った。研磨速度は、8インチのシリコンウエハに熱酸化膜を1μm製膜したものを、60秒研磨してこのときの研磨量より算出した。酸化膜の膜厚測定には、光干渉式膜厚測定装置(ナノメトリクス社製、装置名:Nanospec)を用いた。研磨条件としては、スラリーとして、シリカスラリー(SS12 キャボット社製)を研磨中に流量120ml/min添加した。研磨荷重としては4.5psi、研磨定盤回転数93rpm、ウエハ回転数90rpmとした。
(Evaluation of polishing characteristics)
Using MAT-ARW-8C1A (manufactured by MAT Co., Ltd.) as a polishing apparatus, polishing characteristics were evaluated using the prepared polishing pad. The polishing rate was calculated from the polishing amount obtained by polishing a thermal oxide film of 1 μm formed on an 8-inch silicon wafer for 60 seconds. An optical interference type film thickness measuring device (manufactured by Nanometrics, device name: Nanospec) was used for measuring the thickness of the oxide film. As a polishing condition, silica slurry (SS12 manufactured by Cabot Corporation) was added as a slurry at a flow rate of 120 ml / min during polishing. The polishing load was 4.5 psi, the polishing platen rotating speed was 93 rpm, and the wafer rotating speed was 90 rpm.
平坦化特性は削れ量により評価した。8インチシリコンウエハに熱酸化膜を0.5μm堆積させた後、所定のパターニングを行った後、p-TEOSにて酸化膜を1μm堆積させ、初期段差0.5μmのパターン付きウエハを作製した。このウエハを前述条件にて研磨を行い、研磨後、各段差を測定して削れ量を算出した。削れ量とは、幅270μmのラインが30μmのスペースで並んだパターンと幅30μmのラインが270μmのスペースで並んだパターンにおいて、前記2種のパターンのライン上部の段差が2000Å以下になるときの270μmのスペースの削れ量である。270μmのスペースの削れ量が少ない場合、削れて欲しくない部分の削れ量が少なく、平坦性が高いことを示す。 The flattening characteristics were evaluated by the amount of scraping. After depositing a thermal oxide film of 0.5 μm on an 8-inch silicon wafer and performing predetermined patterning, an oxide film of 1 μm was deposited by p-TEOS to produce a patterned wafer having an initial step of 0.5 μm. This wafer was polished under the above conditions, and after polishing, each step was measured to calculate the amount of scraping. The amount of scraping is 270 μm when the step of the upper part of the lines of the two types of patterns is 2000 mm or less in a pattern in which 270 μm wide lines are arranged in a 30 μm space and a pattern in which 30 μm wide lines are arranged in a 270 μm space This is the amount of space shaving. When the amount of scraping of the space of 270 μm is small, the amount of shaving of the portion that is not desired to be shaved is small, indicating that the flatness is high.
スクラッチの評価は、前記条件で8インチのダミーウエハを3枚研磨し、その後、厚み10000Åの熱酸化膜を堆積させた8インチのウエハを1分間研磨し、そして、KLA テンコール社製の欠陥評価装置(Surfscan SP1)を用いて、研磨後のウエハ上に0.19μm以上の条痕がいくつあるかを測定することにより行った。 Scratch evaluation was performed by polishing three 8-inch dummy wafers under the above conditions, then polishing an 8-inch wafer on which a thermal oxide film having a thickness of 10,000 mm was polished for 1 minute, and a defect evaluation apparatus manufactured by KLA Tencor. (Surfscan SP1) was used to measure how many streaks of 0.19 μm or more exist on the polished wafer.
実施例1
反応容器内に、ポリエーテル系プレポリマー(ユニロイヤル社製、アジプレンL−325)100重量部、及びシリコーン系界面活性剤(ゴールドシュミット社製、B8465)3重量部を加えて混合し、70℃に調整して減圧脱泡した。その後、撹拌翼を用いて、回転数900rpmで反応系内に気泡を取り込むように激しく約4分間撹拌を行った。その後、反応容器内に、3−イソシアネートプロピルトリエトキシシラン(以下、3−IPESiという)1重量部、及び予め120℃に溶融した4,4’−メチレンビス(o−クロロアニリン)(以下、MOCAという)28.9重量部を添加した(NCO Index:1.0)。該混合液を約70秒間撹拌した後、パン型のオープンモールド(注型容器)へ流し込んだ。この混合液の流動性がなくなった時点でオーブン内に入れ、100℃で16時間ポストキュアを行い、ポリウレタン樹脂発泡体ブロックを得た。
約80℃に加熱した前記ポリウレタン樹脂発泡体ブロックをスライサー(アミテック社製、VGW−125)を使用してスライスし、ポリウレタン樹脂発泡体シートを得た。次に、バフ機(アミテック社製)を使用して、厚さ1.27mmになるまで該シートの表面バフ処理をし、厚み精度を整えたシートとした。このバフ処理をしたシートを直径61cmの大きさで打ち抜き、溝加工機(テクノ社製)を用いて表面に溝幅0.25mm、溝ピッチ1.50mm、溝深さ0.40mmの同心円状の溝加工を行い、研磨層を得た。この研磨層の溝加工面と反対側の面にラミ機を使用して、両面テープ(積水化学工業社製、ダブルタックテープ)を貼りつけた。更に、コロナ処理をしたクッションシート(東レ社製、ポリエチレンフォーム、トーレペフ、厚み0.8mm)の表面をバフ処理し、それを前記両面テープにラミ機を使用して貼り合わせた。さらに、クッションシートの他面にラミ機を使用して両面テープを貼り合わせて研磨パッドを作製した。
Example 1
In the reaction vessel, 100 parts by weight of a polyether-based prepolymer (manufactured by Uniroyal, Adiprene L-325) and 3 parts by weight of a silicone-based surfactant (manufactured by Goldschmidt, B8465) are added and mixed at 70 ° C And degassed under reduced pressure. Then, it stirred vigorously for about 4 minutes so that a bubble might be taken in in a reaction system with the rotation speed of 900 rpm using the stirring blade. Thereafter, in a reaction vessel, 1 part by weight of 3-isocyanatopropyltriethoxysilane (hereinafter referred to as 3-IPESi) and 4,4′-methylenebis (o-chloroaniline) (hereinafter referred to as MOCA) previously melted at 120 ° C. 28.9 parts by weight were added (NCO Index: 1.0). The mixed liquid was stirred for about 70 seconds, and then poured into a pan-shaped open mold (casting container). When the fluidity of the mixed solution disappeared, it was placed in an oven and post-cured at 100 ° C. for 16 hours to obtain a polyurethane resin foam block.
The polyurethane resin foam block heated to about 80 ° C. was sliced using a slicer (manufactured by Amitech, VGW-125) to obtain a polyurethane resin foam sheet. Next, using a buffing machine (Amitech Co., Ltd.), the surface of the sheet was buffed to a thickness of 1.27 mm to obtain a sheet with an adjusted thickness accuracy. The buffed sheet is punched out with a diameter of 61 cm, and a concentric circle having a groove width of 0.25 mm, a groove pitch of 1.50 mm, and a groove depth of 0.40 mm on the surface using a groove processing machine (manufactured by Techno). Groove processing was performed to obtain a polishing layer. A double-sided tape (manufactured by Sekisui Chemical Co., Ltd., double tack tape) was attached to the surface of the polishing layer opposite to the grooved surface using a laminator. Furthermore, the surface of the cushion sheet (Toray Industries, Inc., polyethylene foam, Torepef, thickness 0.8 mm) subjected to corona treatment was buffed and bonded to the double-sided tape using a laminator. Further, a double-sided tape was attached to the other surface of the cushion sheet using a laminator to prepare a polishing pad.
実施例2
3−IPESiの添加量を1重量部から5重量部に変更した以外は実施例1と同様の方法で研磨パッドを作製した。
Example 2
A polishing pad was produced in the same manner as in Example 1 except that the amount of 3-IPESi added was changed from 1 part by weight to 5 parts by weight.
実施例3
反応容器内に、ポリエチレングリコール(PEG、第一工業製薬社製、数平均分子量1000)40重量部、ポリエチレングリコール(PEG、第一工業製薬社製、数平均分子量600)12.8重量部、DEG6重量部を入れ、撹拌しながら減圧脱水を1〜2時間行った。次に、セパラブルフラスコ内に窒素を導入し、窒素置換した後にTDI−80(41.2重量部)を添加した。反応系内の温度を70℃程度に保持しながら反応が終了するまで撹拌した。反応の終了はNCO%がほぼ一定になった時点とした(NCO%:9.96)。その後、減圧脱泡を約2時間行い、親水性イソシアネート末端プレポリマー(以下、親水性プレポリマーという)を得た。
反応容器内に、ポリエーテル系プレポリマー(ユニロイヤル社製、アジプレンL−325)80重量部、親水性プレポリマー20重量部、及びシリコーン系界面活性剤(ゴールドシュミット社製、B8465)3重量部を加えて混合し、70℃に調整して減圧脱泡した。その後、撹拌翼を用いて、回転数900rpmで反応系内に気泡を取り込むように激しく約4分間撹拌を行った。その後、反応容器内に、3−IPESi1重量部、及び予め120℃に溶融したMOCA29.4重量部を添加した(NCO Index:1.0)。該混合液を約70秒間撹拌した後、パン型のオープンモールド(注型容器)へ流し込んだ。この混合液の流動性がなくなった時点でオーブン内に入れ、100℃で16時間ポストキュアを行い、ポリウレタン樹脂発泡体ブロックを得た。その後、実施例1と同様の方法で研磨パッドを作製した。
Example 3
In a reaction vessel, polyethylene glycol (PEG, Daiichi Kogyo Seiyaku Co., Ltd., number average molecular weight 1000) 40 parts by weight, polyethylene glycol (PEG, Daiichi Kogyo Seiyaku Co., Ltd., number average molecular weight 600) 12.8 parts by weight, DEG 6 A weight part was added, and dehydration under reduced pressure was performed for 1 to 2 hours with stirring. Next, nitrogen was introduced into the separable flask, and after nitrogen substitution, TDI-80 (41.2 parts by weight) was added. The reaction system was stirred until the reaction was completed while maintaining the temperature in the reaction system at about 70 ° C. The reaction was terminated when the NCO% became almost constant (NCO%: 9.96). Thereafter, degassing under reduced pressure was performed for about 2 hours to obtain a hydrophilic isocyanate-terminated prepolymer (hereinafter referred to as a hydrophilic prepolymer).
In the reaction vessel, 80 parts by weight of a polyether-based prepolymer (Uniroy, Adiprene L-325), 20 parts by weight of a hydrophilic prepolymer, and 3 parts by weight of a silicone-based surfactant (Goldschmitt, B8465) Were added, mixed, adjusted to 70 ° C. and degassed under reduced pressure. Then, it stirred vigorously for about 4 minutes so that a bubble might be taken in in a reaction system with the rotation speed of 900 rpm using the stirring blade. Thereafter, 1 part by weight of 3-IPESi and 29.4 parts by weight of MOCA previously melted at 120 ° C. were added into the reaction vessel (NCO Index: 1.0). The mixed liquid was stirred for about 70 seconds, and then poured into a pan-shaped open mold (casting container). When the fluidity of the mixed solution disappeared, it was placed in an oven and post-cured at 100 ° C. for 16 hours to obtain a polyurethane resin foam block. Thereafter, a polishing pad was produced in the same manner as in Example 1.
実施例4
3−IPESiの添加量を1重量部から5重量部に変更した以外は実施例3と同様の方法で研磨パッドを作製した。
Example 4
A polishing pad was produced in the same manner as in Example 3 except that the amount of 3-IPESi added was changed from 1 part by weight to 5 parts by weight.
比較例1〜3
表1に記載の配合を採用した以外は実施例1と同様の方法で研磨パッドを作製した。
Comparative Examples 1-3
A polishing pad was prepared in the same manner as in Example 1 except that the formulation shown in Table 1 was adopted.
実施例1〜4の研磨パッドは、研磨速度が大きく、かつ平坦化特性に優れるものであった。また、ウエハにスクラッチが発生することを効果的に抑制することができた。一方、比較例1〜3の研磨パッドは、研磨速度及び平坦化特性が不十分であった。また、比較例1及び2の研磨パッドは、ウエハにスクラッチが発生することを抑制することができなかった。 The polishing pads of Examples 1 to 4 had a high polishing rate and excellent planarization characteristics. Moreover, it was possible to effectively suppress the generation of scratches on the wafer. On the other hand, the polishing pads of Comparative Examples 1 to 3 were insufficient in polishing rate and planarization characteristics. Moreover, the polishing pads of Comparative Examples 1 and 2 could not suppress the generation of scratches on the wafer.
本発明の研磨パッドはレンズ、反射ミラー等の光学材料やシリコンウエハ、アルミ基板、及び一般的な金属研磨加工等の高度の表面平坦性を要求される材料の平坦化加工を安定、かつ高い研磨効率で行うことができる。本発明の研磨パッドは、特にシリコンウエハ並びにその上に酸化物層、金属層等が形成されたデバイスを、さらにこれらの酸化物層や金属層を積層・形成する前に平坦化する工程に好適に使用できる。 The polishing pad of the present invention provides stable and high leveling of flattening of optical materials such as lenses and reflecting mirrors, silicon wafers, aluminum substrates, and materials requiring high surface flatness such as general metal polishing. Can be done with efficiency. The polishing pad of the present invention is particularly suitable for a step of planarizing a silicon wafer and a device having an oxide layer, a metal layer, etc. formed thereon, before further laminating and forming these oxide layers and metal layers. Can be used for
1:研磨パッド(研磨層)
2:研磨定盤
3:研磨剤(スラリー)
4:研磨対象物(半導体ウエハ)
5:支持台(ポリシングヘッド)
6、7:回転軸
1: Polishing pad (polishing layer)
2: Polishing surface plate 3: Abrasive (slurry)
4: Polishing object (semiconductor wafer)
5: Support base (polishing head)
6, 7: Rotating shaft
Claims (6)
(式中、XはOR1又はOHであり、R1はそれぞれ独立に炭素数1〜4のアルキル基であり、R2は炭素数1〜6のアルキレン基である。) In a polishing pad having a polishing layer made of a polyurethane resin foam, the polyurethane resin as a material for forming the polyurethane resin foam includes at least one chemical structure represented by the following general formulas (2) to (4). A polishing pad, wherein an alkoxysilyl group is introduced into the side chain.
(In the formula, X is OR 1 or OH, R 1 is each independently an alkyl group having 1 to 4 carbon atoms, and R 2 is an alkylene group having 1 to 6 carbon atoms.)
前記工程は、イソシアネート末端プレポリマーを含む第1成分にシリコーン系界面活性剤を第1成分及び第2成分の合計重量に対して0.05〜10重量%になるように添加し、さらに前記第1成分を非反応性気体と撹拌して前記非反応性気体を気泡として分散させた気泡分散液を調製した後、前記気泡分散液に鎖延長剤を含む第2成分を混合し、硬化してポリウレタン樹脂発泡体を作製する工程であり、
前記第2成分は、下記一般式(1)で表されるアルコキシシリル基含有イソシアネートを含有することを特徴とする研磨パッドの製造方法。
(式中、XはOR1又はOHであり、R1はそれぞれ独立に炭素数1〜4のアルキル基であり、R2は炭素数1〜6のアルキレン基である。) In the method for producing a polishing pad comprising the steps of mixing a first component containing an isocyanate-terminated prepolymer and a second component containing a chain extender and curing to produce a polyurethane resin foam,
In the step, a silicone-based surfactant is added to the first component containing the isocyanate-terminated prepolymer so as to be 0.05 to 10% by weight with respect to the total weight of the first component and the second component. After preparing a bubble dispersion in which one component is stirred with a non-reactive gas to disperse the non-reactive gas as bubbles, a second component containing a chain extender is mixed in the bubble dispersion and cured. A step of producing a polyurethane resin foam,
The said 2nd component contains the alkoxysilyl group containing isocyanate represented by following General formula (1), The manufacturing method of the polishing pad characterized by the above-mentioned.
(In the formula, X is OR 1 or OH, R 1 is each independently an alkyl group having 1 to 4 carbon atoms, and R 2 is an alkylene group having 1 to 6 carbon atoms.)
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JP2014051954A JP5871978B2 (en) | 2014-03-14 | 2014-03-14 | Polishing pad and manufacturing method thereof |
PCT/JP2015/056517 WO2015137233A1 (en) | 2014-03-14 | 2015-03-05 | Polishing pad and method for producing same |
KR1020167026859A KR20160132882A (en) | 2014-03-14 | 2015-03-05 | Polishing pad and method for producing same |
DE112015001247.8T DE112015001247T5 (en) | 2014-03-14 | 2015-03-05 | Polishing pad and method for its production |
CN201580013168.9A CN106457510A (en) | 2014-03-14 | 2015-03-05 | Polishing pad and method for producing same |
TW104107932A TWI546315B (en) | 2014-03-14 | 2015-03-12 | Polishing pad and manufacturing method thereof |
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JP6697931B2 (en) * | 2016-04-01 | 2020-05-27 | 富士紡ホールディングス株式会社 | Polishing pad, polishing pad manufacturing method and polishing method |
EP3792295A4 (en) * | 2018-05-11 | 2022-05-11 | Kuraray Co., Ltd. | Method for modifying polyurethane, polyurethane, polishing pad, and method for modifying polishing pad |
KR102129664B1 (en) | 2018-07-26 | 2020-07-02 | 에스케이씨 주식회사 | Polishing pad, preparation method thereof, and polishing method applying of the same |
KR102129665B1 (en) | 2018-07-26 | 2020-07-02 | 에스케이씨 주식회사 | Polishing pad, preparation method thereof, and polishing method applying of the same |
US11628535B2 (en) | 2019-09-26 | 2023-04-18 | Skc Solmics Co., Ltd. | Polishing pad, method for manufacturing polishing pad, and polishing method applying polishing pad |
CN112571303B (en) * | 2019-09-29 | 2023-03-28 | Skc索密思株式会社 | Polishing pad, method for manufacturing the same, and polishing method using the same |
TWI761921B (en) | 2019-10-30 | 2022-04-21 | 南韓商Skc索密思股份有限公司 | Polishing pad, process for preparing the same, and process for preparing a semiconductor device using the same |
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US6197912B1 (en) * | 1999-08-20 | 2001-03-06 | Ck Witco Corporation | Silane endcapped moisture curable compositions |
JP3826702B2 (en) | 2000-10-24 | 2006-09-27 | Jsr株式会社 | Polishing pad composition and polishing pad using the same |
US7059946B1 (en) * | 2000-11-29 | 2006-06-13 | Psiloquest Inc. | Compacted polishing pads for improved chemical mechanical polishing longevity |
JP3851135B2 (en) | 2001-10-17 | 2006-11-29 | ニッタ・ハース株式会社 | Polishing pad |
JP3776428B2 (en) * | 2002-12-27 | 2006-05-17 | 株式会社加平 | Polyurethane foam sheet and method for producing laminate sheet using the same |
JP2004303983A (en) * | 2003-03-31 | 2004-10-28 | Fuji Photo Film Co Ltd | Polishing pad |
JP2005019886A (en) * | 2003-06-27 | 2005-01-20 | Asahi Kasei Electronics Co Ltd | Grinding pad and manufacturing method therefor |
CN100354329C (en) * | 2003-07-30 | 2007-12-12 | 三井武田化学株式会社 | Polyurethane resin,water polyurethane resin,hydrophilic modifier,moisture resin and process for producing polyurethaneresin |
JP4189963B2 (en) * | 2003-08-21 | 2008-12-03 | 東洋ゴム工業株式会社 | Polishing pad |
WO2006095591A1 (en) * | 2005-03-08 | 2006-09-14 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and process for producing the same |
JP5016266B2 (en) * | 2006-06-30 | 2012-09-05 | 三井化学株式会社 | Primer for optical plastic lens |
CN101516957B (en) * | 2006-09-20 | 2011-12-28 | 三井化学株式会社 | Aqueous polyurethane resin |
JP5078513B2 (en) * | 2007-09-10 | 2012-11-21 | 富士紡ホールディングス株式会社 | Polishing pad and method of manufacturing polishing pad |
JP5189440B2 (en) | 2008-09-04 | 2013-04-24 | 富士紡ホールディングス株式会社 | Polishing method |
WO2012137531A1 (en) * | 2011-04-04 | 2012-10-11 | Dic株式会社 | Urethane resin composition for polishing pads, polishing pad, and method for producing same |
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