JP5868545B2 - 再分配されたデジタルピクセル - Google Patents

再分配されたデジタルピクセル Download PDF

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Publication number
JP5868545B2
JP5868545B2 JP2015507211A JP2015507211A JP5868545B2 JP 5868545 B2 JP5868545 B2 JP 5868545B2 JP 2015507211 A JP2015507211 A JP 2015507211A JP 2015507211 A JP2015507211 A JP 2015507211A JP 5868545 B2 JP5868545 B2 JP 5868545B2
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Japan
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digital
pixel
array
analog
charge
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Japanese (ja)
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JP2015518696A (ja
JP2015518696A5 (enExample
Inventor
デナム，マーティン，エス．
ボエムラー，クリスチャン，エム．
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Raytheon Co
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Raytheon Co
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128—Assembling formed circuit to base

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2015507211A 2012-04-19 2013-04-19 再分配されたデジタルピクセル Active JP5868545B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261635751P 2012-04-19 2012-04-19
US61/635,751 2012-04-19
PCT/US2013/037319 WO2013158965A1 (en) 2012-04-19 2013-04-19 Repartitioned digital pixel

Publications (3)

Publication Number Publication Date
JP2015518696A JP2015518696A (ja) 2015-07-02
JP2015518696A5 JP2015518696A5 (enExample) 2016-01-14
JP5868545B2 true JP5868545B2 (ja) 2016-02-24

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ID=48325892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015507211A Active JP5868545B2 (ja) 2012-04-19 2013-04-19 再分配されたデジタルピクセル

Country Status (5)

Country Link
US (1) US9154713B2 (enExample)
EP (2) EP4192026A1 (enExample)
JP (1) JP5868545B2 (enExample)
IL (1) IL234706A (enExample)
WO (1) WO2013158965A1 (enExample)

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JP6218799B2 (ja) 2015-01-05 2017-10-25 キヤノン株式会社 撮像素子及び撮像装置
US10070088B2 (en) * 2015-01-05 2018-09-04 Canon Kabushiki Kaisha Image sensor and image capturing apparatus for simultaneously performing focus detection and image generation
US9647655B2 (en) 2015-03-27 2017-05-09 Raytheon Company Current to frequency converter
US9621829B1 (en) * 2015-12-30 2017-04-11 Raytheon Company Imaging system unit cell and methods for dynamic range imaging
US9674471B1 (en) 2016-03-24 2017-06-06 Raytheon Company Digital unit cell with bidirectional ripple counter
US9704907B1 (en) 2016-04-08 2017-07-11 Raytheon Company Direct read pixel alignment
US9854192B2 (en) * 2016-04-12 2017-12-26 Raytheon Company Digital unit cell with analog counter element
FR3050596B1 (fr) * 2016-04-26 2018-04-20 New Imaging Technologies Systeme imageur a deux capteurs
JP6774224B2 (ja) 2016-05-26 2020-10-21 キヤノン株式会社 固体撮像装置及び撮像システム
US10084976B2 (en) 2016-11-02 2018-09-25 Raytheon Company Flux rate unit cell focal plane array
KR102704878B1 (ko) * 2016-12-30 2024-09-11 소니 어드밴스드 비주얼 센싱 아게 동적 비전 센서 아키텍쳐
US10690448B2 (en) 2017-01-20 2020-06-23 Raytheon Company Method and apparatus for variable time pulse sampling
CN107515050B (zh) * 2017-08-15 2019-08-02 电子科技大学 一种红外焦平面读出电路
US10635168B2 (en) 2017-08-22 2020-04-28 Microsoft Technology Licensing, Llc MEMS line scanner and silicon photomultiplier based pixel camera for low light large dynamic range eye imaging
US10419699B1 (en) 2018-04-05 2019-09-17 Raytheon Company Method for shift register digital in pixel unit cell
US11350054B2 (en) * 2018-05-21 2022-05-31 Bae Systems Information And Electronic Systems Integration Inc. Dual gain imaging digital pixel memory
EP3861717A1 (en) * 2018-10-04 2021-08-11 Raytheon Company Pumped large full well pixel
EP3683837B1 (en) 2019-01-16 2022-04-27 STMicroelectronics (Research & Development) Limited Optical sensor and apparatus comprising an optical sensor
KR102695388B1 (ko) 2019-02-12 2024-08-19 삼성전자주식회사 디지털 픽셀을 포함하는 이미지 센서
US11483506B2 (en) * 2019-05-29 2022-10-25 Raytheon Company Continuously integrating digital pixel imager
US10911705B2 (en) * 2019-05-31 2021-02-02 Raytheon Company Digital in-pixel read-out integrated circuit including residue-to-counter calibration
US11557430B2 (en) 2020-02-19 2023-01-17 Eaton Intelligent Power Limited Current transformer powered controller
US11134208B1 (en) * 2020-11-17 2021-09-28 Raytheon Company Increasing dynamic range of digital pixels by utilizing polling during integration
US11877079B2 (en) * 2020-12-22 2024-01-16 Samsung Electronics Co., Ltd. Time-resolving computational image sensor architecture for time-of-flight, high-dynamic-range, and high-speed imaging

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WO2003001567A2 (en) * 2001-06-20 2003-01-03 R3 Logic, Inc. High resolution, low power, wide dynamic range imager with embedded pixel processor and dram storage
US20030206236A1 (en) * 2002-05-06 2003-11-06 Agfa Corporation CMOS digital image sensor system and method
US7362365B1 (en) * 2002-06-26 2008-04-22 Pixim, Inc. Digital image capture having an ultra-high dynamic range
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Also Published As

Publication number Publication date
EP4192026A1 (en) 2023-06-07
US9154713B2 (en) 2015-10-06
US20130278804A1 (en) 2013-10-24
JP2015518696A (ja) 2015-07-02
IL234706A (en) 2016-10-31
WO2013158965A1 (en) 2013-10-24
EP2839636A1 (en) 2015-02-25

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