JP5857709B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP5857709B2
JP5857709B2 JP2011273223A JP2011273223A JP5857709B2 JP 5857709 B2 JP5857709 B2 JP 5857709B2 JP 2011273223 A JP2011273223 A JP 2011273223A JP 2011273223 A JP2011273223 A JP 2011273223A JP 5857709 B2 JP5857709 B2 JP 5857709B2
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bus bar
resin portion
resin
semiconductor device
bonding
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JP2013125825A (en
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大悟 上野
大悟 上野
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Nissan Motor Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

本発明は、半導体装置に関する。   The present invention relates to a semiconductor device.

例えば、電気自動車やハイブリッド自動車等の駆動モータ制御用のインバータ等に用いられる半導体装置として、特許文献１に開示されている半導体装置が知られている。特許文献１に開示されている半導体装置は、半導体素子の両主面を、外周に樹脂製の枠体を設けた二つのバスバーで挟んだ状態で、はんだ等の接合材料を用いて半導体素子とバスバーとを接合し、枠体内部のバスバーの露出面を含む部位をモールド樹脂で封止して形成している。これにより、枠体内部のバスバーと半導体素子との接合面がモールド樹脂と枠体を形成する樹脂で覆われ、半導体素子両面に配置されているバスバー間の絶縁が確保されている。   For example, a semiconductor device disclosed in Patent Document 1 is known as a semiconductor device used for an inverter for controlling a drive motor of an electric vehicle or a hybrid vehicle. In the semiconductor device disclosed in Patent Document 1, both main surfaces of a semiconductor element are sandwiched between two bus bars provided with a resin frame on the outer periphery, and a bonding material such as solder is used to connect the semiconductor element and the semiconductor element. The bus bar is joined, and the part including the exposed surface of the bus bar inside the frame is sealed with a mold resin. Thereby, the joint surface between the bus bar inside the frame and the semiconductor element is covered with the mold resin and the resin that forms the frame, and insulation between the bus bars arranged on both sides of the semiconductor element is ensured.

特開２００８−１４１０５３号公報JP 2008-141053 A

しかしながら、バスバーとモールド樹脂の線膨張係数は異なるため、半導体装置が熱によって膨張収縮すると、モールド樹脂と枠体を形成する樹脂との間が剥離して、バスバーと、半導体素子面と同電位の部材との間（例えば、上下のバスバー間）の絶縁信頼性が低下する可能性がある。   However, since the linear expansion coefficients of the bus bar and the mold resin are different, when the semiconductor device expands and contracts due to heat, the mold resin and the resin forming the frame are separated, and the bus bar and the semiconductor element surface have the same potential. There is a possibility that the insulation reliability between the members (for example, between the upper and lower bus bars) is lowered.

本発明は、バスバーと、半導体素子面と同電位の部材との間の絶縁信頼性が高い半導体装置を提供することを目的とする。   An object of the present invention is to provide a semiconductor device having high insulation reliability between a bus bar and a member having the same potential as that of a semiconductor element surface.

本発明による半導体装置は、電源に接続されたバスバーと、バスバーの表面に載置され、表裏面の電極面のうちの少なくとも一方の電極面が前記バスバーに電気的に接続された半導体素子と、第１の樹脂材で形成され、枠状の形状で前記バスバーの外周を覆ってバスバーと接合する第１の樹脂部と、第２の樹脂材で形成され、枠状の第１の樹脂部の内部に充填されて半導体素子をモールドするとともに、第１の樹脂部およびバスバーと接合する第２の樹脂部とを備える。そして、バスバーは、第１の樹脂部側に突出した凸部を有し、凸部の上面および下面は、第１の樹脂部と接合しており、第１の樹脂部と第２の樹脂部との接合面の接合強度は、第１の樹脂部とバスバーとの接合面の接合強度よりも大きい。 A semiconductor device according to the present invention includes a bus bar connected to a power source, a semiconductor element mounted on the surface of the bus bar, and at least one electrode surface of the front and back electrode surfaces electrically connected to the bus bar, A first resin part formed of a first resin material, covering the outer periphery of the bus bar in a frame shape and joined to the bus bar; and a second resin material formed of a first resin part of the frame shape A semiconductor element is filled inside and molded, and a first resin part and a second resin part joined to the bus bar are provided. The bus bar has a convex portion protruding toward the first resin portion, and the upper surface and the lower surface of the convex portion are joined to the first resin portion, and the first resin portion and the second resin portion. The bonding strength of the bonding surface is greater than the bonding strength of the bonding surface of the first resin portion and the bus bar.

本発明によれば、半導体装置が熱膨張・収縮する際に、相対的に接合強度が小さい第１の樹脂部とバスバーとの接合面が先に剥離するので、第１の樹脂部と第２の樹脂部との接合面が剥離して、バスバーと、半導体素子面と同電位の部材との間の絶縁信頼性が低下するのを防ぐことができる。   According to the present invention, when the semiconductor device thermally expands / shrinks, the bonding surface between the first resin portion and the bus bar having relatively low bonding strength peels first, so that the first resin portion and the second resin portion Therefore, it is possible to prevent the insulation reliability between the bus bar and the member having the same potential as that of the semiconductor element surface from being lowered due to separation of the joint surface with the resin portion.

図１は、第１の実施形態における半導体装置の上面図である。FIG. 1 is a top view of the semiconductor device according to the first embodiment. 図２は、図１に示す第１の実施形態における半導体装置をＡ−Ａ平面で切断した場合の断面図である。FIG. 2 is a cross-sectional view of the semiconductor device according to the first embodiment shown in FIG. 1 taken along the plane AA. 図３は、高温環境下に置かれた半導体装置の第１のバスバーが膨張した状態を示す図である。FIG. 3 is a diagram illustrating a state where the first bus bar of the semiconductor device placed in a high temperature environment is expanded. 図４は、低温環境下に置かれた半導体装置の第１のバスバーが収縮した状態を示す図である。FIG. 4 is a diagram illustrating a state where the first bus bar of the semiconductor device placed in a low temperature environment is contracted. 図５は、第３の実施形態における半導体装置の上面図である。FIG. 5 is a top view of the semiconductor device according to the third embodiment. 図６は、図５に示す第３の実施形態における半導体装置をＢ−Ｂ平面で切断した場合の断面図である。FIG. 6 is a cross-sectional view of the semiconductor device according to the third embodiment shown in FIG. 5 taken along the BB plane.

＜第１の実施形態＞
図１は、第１の実施形態における半導体装置の上面図である。また、図２は、図１に示す第１の実施形態における半導体装置をＡ−Ａ平面で切断した場合の断面図である。 <First Embodiment>
FIG. 1 is a top view of the semiconductor device according to the first embodiment. FIG. 2 is a cross-sectional view of the semiconductor device according to the first embodiment shown in FIG. 1 cut along an AA plane.

半導体素子１の下面は、はんだ等の接合部材２によって、通電および放電機能を有する第１のバスバー３に接合されている。第１のバスバー３は、第１の樹脂部５と一体成形されており、枠状の形状をしている。より具体的には、枠状の形状である第１の樹脂部５が第１のバスバー３の外周を覆って第１のバスバー３と一体成形されている。なお、第１のバスバー３と第１の樹脂部５とが一体成形されている必要はない。   The lower surface of the semiconductor element 1 is joined to a first bus bar 3 having energization and discharge functions by a joining member 2 such as solder. The first bus bar 3 is integrally formed with the first resin portion 5 and has a frame shape. More specifically, the first resin portion 5 having a frame shape covers the outer periphery of the first bus bar 3 and is integrally formed with the first bus bar 3. Note that the first bus bar 3 and the first resin portion 5 do not have to be integrally formed.

第１の樹脂部５は、第１の樹脂材で形成されている。第１の樹脂材は、例えば、ＰＰＳ（ポリフェニレンサルファイド）やＰＢＴ（ポリブチレンテレフタート）である。   The 1st resin part 5 is formed with the 1st resin material. The first resin material is, for example, PPS (polyphenylene sulfide) or PBT (polybutylene terephthalate).

半導体素子１の上面は、アルミからなるボンディングワイヤ７によって、第２のバスバー４に接続されている。半導体素子１は、ＩＧＢＴやダイオードである。半導体素子１がＩＧＢＴの場合、半導体素子の上面側はエミッタ電極、下面側はコレクタ電極である。   The upper surface of the semiconductor element 1 is connected to the second bus bar 4 by a bonding wire 7 made of aluminum. The semiconductor element 1 is an IGBT or a diode. When the semiconductor element 1 is an IGBT, the upper surface side of the semiconductor element is an emitter electrode, and the lower surface side is a collector electrode.

第１のバスバー３および第２のバスバー４は、電源に接続されている。   The first bus bar 3 and the second bus bar 4 are connected to a power source.

なお、半導体素子１は、複数並列に接続されていてもよい。   Note that a plurality of semiconductor elements 1 may be connected in parallel.

ワイヤボンディングされた半導体装置は、第２の樹脂材であるエポキシ樹脂からなる第２の樹脂部６によって封止される。ただし、第２の樹脂材がエポキシ樹脂に限定されることはない。   The wire bonded semiconductor device is sealed with a second resin portion 6 made of an epoxy resin, which is a second resin material. However, the second resin material is not limited to the epoxy resin.

第２の樹脂部６の封止工法としては、第１の樹脂部５からなるケースに大気圧もしくは減圧下で第２の樹脂材を流し込んだ後、高温下で樹脂を硬化させる工法や、キャビティを有する金型内に半導体装置をセットし、圧力をかけながら樹脂をケース内に注入するトランスファーモールド工法を用いることができる。ただし、第２の樹脂部６の封止工法が上述した工法に限定されることはない。   As a sealing method for the second resin portion 6, a method in which the second resin material is poured into the case made of the first resin portion 5 under atmospheric pressure or reduced pressure, and then the resin is cured at a high temperature, or a cavity is used. It is possible to use a transfer molding method in which a semiconductor device is set in a mold having a shape and a resin is injected into the case while applying pressure. However, the sealing method of the second resin portion 6 is not limited to the above-described method.

なお、内部構造を分かりやすくするため、図１では、第２の樹脂部６を図示していないが、第１の樹脂部５の上面の高さ以下、もしくは同じ高さまで第２の樹脂部６が充填されている。   In order to make the internal structure easy to understand, the second resin portion 6 is not shown in FIG. 1, but the second resin portion 6 is equal to or lower than the height of the upper surface of the first resin portion 5 or the same height. Is filled.

第１のバスバー３は、例えば銅からなり、その線膨張係数は１７ｐｐｍ／℃である。また、第２の樹脂部６は、線膨張係数が第１のバスバー３よりも小さく、例えば１３ｐｐｍ／℃程度に調整されたエポキシ樹脂である。   The first bus bar 3 is made of copper, for example, and has a linear expansion coefficient of 17 ppm / ° C. The second resin portion 6 is an epoxy resin having a linear expansion coefficient smaller than that of the first bus bar 3 and adjusted to, for example, about 13 ppm / ° C.

第１のバスバー３は、図２に示すように、第１の樹脂部５側に延伸した凸部３ａを有している。凸部３ａの上面および下面はそれぞれ、第１の樹脂部５に接している。第１のバスバー３の凸部３ａの上面と第１の樹脂部５との接合面は、第１の樹脂部５と第２の樹脂部６との接合面と略平行である。   As shown in FIG. 2, the first bus bar 3 has a convex portion 3 a extending toward the first resin portion 5. The upper surface and the lower surface of the convex portion 3 a are in contact with the first resin portion 5. The bonding surface between the upper surface of the convex portion 3 a of the first bus bar 3 and the first resin portion 5 is substantially parallel to the bonding surface between the first resin portion 5 and the second resin portion 6.

第１のバスバー３の凸部３ａの上部において、第２の樹脂部６と接する第１の樹脂部５の接合面は、その表面が粗い粗化面５ａを有する。粗化面５ａは、例えば、ショットブラストで製作したり、樹脂材の成型金型を粗くすることによって製作することができる。このような構成とすることにより、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面の接合強度は、第１のバスバー３の凸部３ａの上面と第１の樹脂部５との接合面の接合強度よりも大きくなる。   In the upper part of the convex portion 3 a of the first bus bar 3, the joint surface of the first resin portion 5 that contacts the second resin portion 6 has a roughened surface 5 a with a rough surface. The roughened surface 5a can be manufactured, for example, by shot blasting or by roughening a molding die of a resin material. With such a configuration, the bonding strength of the bonding surface between the roughened surface 5a of the first resin portion 5 and the second resin portion 6 is the same as that of the upper surface of the convex portion 3a of the first bus bar 3 and the first surface. It becomes larger than the joint strength of the joint surface with the resin part 5.

ここで、第１の実施形態における半導体装置が高温環境下に置かれると、第１のバスバー３と第２の樹脂部６の線膨張係数の違いから、第１のバスバー３が第２の樹脂部６よりも半導体素子１の外周方向に伸びようとする。   Here, when the semiconductor device according to the first embodiment is placed in a high temperature environment, the first bus bar 3 becomes the second resin due to the difference in the linear expansion coefficient between the first bus bar 3 and the second resin portion 6. It tends to extend in the outer peripheral direction of the semiconductor element 1 from the portion 6.

図３は、高温環境下に置かれた半導体装置の第１のバスバー３が膨張した状態を示す図である。図３では、膨張する前の第１のバスバー３の大きさを波線３ｂで示している。また、以下の説明のため、第１のバスバー３の凸部３ａと第２の樹脂部６との間にある第１の樹脂部５の部分を薄肉部５ｂと呼ぶ。   FIG. 3 is a view showing a state where the first bus bar 3 of the semiconductor device placed in a high temperature environment is expanded. In FIG. 3, the magnitude | size of the 1st bus bar 3 before expansion | swelling is shown with the wavy line 3b. In addition, for the following description, a portion of the first resin portion 5 between the convex portion 3a of the first bus bar 3 and the second resin portion 6 is referred to as a thin portion 5b.

上述したように、第１のバスバー３の凸部３ａの上面と第１の樹脂部５の接合面は、第１の樹脂部５と第２の樹脂部６との接合面と略平行であるため、第１のバスバー３の外周方向の変位に対して、両接合面には、同じ方向の応力が発生する。また、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面の接合強度は、第１のバスバー３の凸部３ａの上面と第１の樹脂部５との接合面の接合強度よりも大きい。従って、第１のバスバー３の外周方向の変位に対して、第１の樹脂部５の薄肉部５ｂと、第１のバスバー３の凸部３ａの接合面が剥離して、薄肉部５ｂが変形する。これにより、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面に加わるせん断応力を低下させることができ、この接合面が剥離することを防止して、第１のバスバー３と第２のバスバー４間での絶縁信頼性が低下することを防ぐことができる。   As described above, the upper surface of the convex portion 3 a of the first bus bar 3 and the bonding surface of the first resin portion 5 are substantially parallel to the bonding surface of the first resin portion 5 and the second resin portion 6. Therefore, stress in the same direction is generated on both joint surfaces with respect to the displacement in the outer peripheral direction of the first bus bar 3. Further, the bonding strength of the bonding surface between the roughened surface 5 a of the first resin portion 5 and the second resin portion 6 is determined by the bonding between the upper surface of the convex portion 3 a of the first bus bar 3 and the first resin portion 5. It is larger than the bonding strength of the surface. Therefore, with respect to the displacement in the outer peripheral direction of the first bus bar 3, the joint surface between the thin portion 5b of the first resin portion 5 and the convex portion 3a of the first bus bar 3 is peeled off, and the thin portion 5b is deformed. To do. As a result, the shear stress applied to the joint surface between the roughened surface 5a of the first resin portion 5 and the second resin portion 6 can be reduced, and the first joint portion can be prevented from peeling off. It is possible to prevent the insulation reliability between the bus bar 3 and the second bus bar 4 from being lowered.

また、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面が剥離することなく、第１のバスバー３と第２のバスバー４との間の絶縁性を確保することができるので、第１のバスバー３と第２のバスバー４間の絶縁距離を小さくすることができる。これにより、絶縁信頼性を確保したまま、半導体装置のサイズを小さくすることができる。   Moreover, the insulation between the 1st bus-bar 3 and the 2nd bus-bar 4 is ensured, without peeling the joint surface of the rough surface 5a of the 1st resin part 5, and the 2nd resin part 6. FIG. Therefore, the insulation distance between the first bus bar 3 and the second bus bar 4 can be reduced. Thereby, the size of the semiconductor device can be reduced while ensuring the insulation reliability.

以上、第１の実施形態における半導体装置は、電源に接続されたバスバー３と、バスバー３の表面に載置され、表裏面の電極面のうちの少なくとも一方の電極面がバスバー３に電気的に接続された半導体素子１と、第１の樹脂材で形成され、枠状の形状でバスバー３の外周を覆ってバスバー３と接合する第１の樹脂部５と、第２の樹脂材で形成され、枠状の第１の樹脂部の内部に充填されて半導体素子１をモールドするとともに、第１の樹脂部５およびバスバー３と接合する第２の樹脂部６とを備える。そして、第１の樹脂部５と第２の樹脂部６との接合面の接合強度は、第１の樹脂部５とバスバー３との接合面の接合強度よりも大きい。このような構成としたことにより、半導体装置が熱膨張する際に、相対的に接合強度が小さい第１の樹脂部５とバスバー３との接合面が先に剥離して変形することで、バスバー３と第２の樹脂部６の接合面が剥離するのを防いで、バスバー３と、半導体素子面と同電位の部材との間の絶縁信頼性が低下するのを防ぐことができる。また、第１の樹脂部５と第２の樹脂部６の接合面が剥離した場合を考慮してバスバー３と、半導体素子面と同電位の部材との間の絶縁距離を大きくする必要が無いので、半導体装置を小型化することができる。   As described above, the semiconductor device according to the first embodiment is placed on the bus bar 3 connected to the power source and the surface of the bus bar 3, and at least one of the electrode surfaces on the front and back surfaces is electrically connected to the bus bar 3. The semiconductor element 1 connected, the first resin material 5 that is formed of a first resin material, covers the outer periphery of the bus bar 3 in a frame shape, and is formed of the second resin material. The semiconductor element 1 is molded by filling the inside of the frame-shaped first resin part, and the first resin part 5 and the second resin part 6 joined to the bus bar 3 are provided. The bonding strength of the bonding surface between the first resin portion 5 and the second resin portion 6 is larger than the bonding strength of the bonding surface between the first resin portion 5 and the bus bar 3. With this configuration, when the semiconductor device thermally expands, the bonding surface between the first resin portion 5 and the bus bar 3 having relatively low bonding strength is peeled off first and deformed, so that the bus bar 3 and the second resin portion 6 can be prevented from peeling off, and the insulation reliability between the bus bar 3 and the member having the same potential as that of the semiconductor element surface can be prevented from being lowered. Moreover, it is not necessary to increase the insulation distance between the bus bar 3 and the member having the same potential as that of the semiconductor element surface in consideration of the case where the joint surface between the first resin portion 5 and the second resin portion 6 is peeled off. Therefore, the semiconductor device can be reduced in size.

第１の樹脂部５と第２の樹脂部６との接合面は、第１の樹脂部５とバスバー３との接合面と略平行であるので、半導体装置が熱膨張すると、第１の樹脂部５と第２の樹脂部６との接合面には、第１の樹脂部５とバスバー３との接合面と同じ方向の力が加わる。これにより、相対的に強度が小さい第１の樹脂部５とバスバー３との接合面が確実に先に剥離して変形するので、バスバー３と第２の樹脂部６の接合面が剥離して、バスバーと、半導体素子面と同電位の部材との間の絶縁信頼性が低下するのを防ぐことができる。   Since the joint surface between the first resin portion 5 and the second resin portion 6 is substantially parallel to the joint surface between the first resin portion 5 and the bus bar 3, the first resin is expanded when the semiconductor device is thermally expanded. A force in the same direction as the bonding surface between the first resin portion 5 and the bus bar 3 is applied to the bonding surface between the portion 5 and the second resin portion 6. As a result, the joint surface between the first resin portion 5 and the bus bar 3 having relatively low strength is surely peeled first and deformed, so the joint surface between the bus bar 3 and the second resin portion 6 is peeled off. It is possible to prevent the insulation reliability between the bus bar and the member having the same potential as that of the semiconductor element surface from being lowered.

また、第１の樹脂部５と第２の樹脂部６との接合面における第１の樹脂部５の少なくとも一部の表面は、第１の樹脂部５とバスバー３との接合面における第１の樹脂部５の表面に比べて粗い。これにより、複雑な工程を追加することなく、第１の樹脂部５と第２の樹脂部６との接合面の接合強度を、第１の樹脂部５とバスバー３との接合面の接合強度よりも大きくすることができる。   Further, at least a part of the surface of the first resin portion 5 in the joint surface between the first resin portion 5 and the second resin portion 6 is the first surface in the joint surface between the first resin portion 5 and the bus bar 3. The surface of the resin part 5 is rougher. Thereby, without adding a complicated process, the joint strength of the joint surface between the first resin part 5 and the second resin part 6 is set to the joint strength of the joint surface between the first resin part 5 and the bus bar 3. Can be larger.

さらに、バスバー３は、第１の樹脂部５側に突出した凸部３ａを有し、凸部３ａの上面および下面は、それぞれ第１の樹脂部５と接合している、すなわち、凸部３ａは、第１の樹脂部５によって挟み込まれているので、第１の樹脂部５がバスバー３から外れるのを防ぐことができる。   Furthermore, the bus bar 3 has a convex portion 3a that protrudes toward the first resin portion 5, and the upper surface and the lower surface of the convex portion 3a are respectively joined to the first resin portion 5, that is, the convex portion 3a. Is sandwiched between the first resin parts 5, it is possible to prevent the first resin part 5 from being detached from the bus bar 3.

＜第２の実施形態＞
第２の実施形態における半導体装置の構成は、第１の実施形態における半導体装置の構成と同じである。第２の実施形態における半導体装置が第１の実施形態における半導体装置と異なるのは、第１のバスバー３と第２の樹脂部６の線膨張係数の大小関係である。すなわち、第２の実施形態における半導体装置では、第１のバスバー３の線膨張係数よりも、第２の樹脂部６の線膨張係数の方が大きい。ここでは、第１のバスバー３の線膨張係数は、第１の実施形態と同じ（１７ｐｐｍ／℃）とし、第２の樹脂部６の線膨張係数を、２０ｐｐｍ／℃とする。 <Second Embodiment>
The configuration of the semiconductor device in the second embodiment is the same as the configuration of the semiconductor device in the first embodiment. The semiconductor device in the second embodiment is different from the semiconductor device in the first embodiment in the magnitude relationship between the linear expansion coefficients of the first bus bar 3 and the second resin portion 6. That is, in the semiconductor device according to the second embodiment, the linear expansion coefficient of the second resin portion 6 is larger than the linear expansion coefficient of the first bus bar 3. Here, the linear expansion coefficient of the first bus bar 3 is the same as that of the first embodiment (17 ppm / ° C.), and the linear expansion coefficient of the second resin portion 6 is 20 ppm / ° C.

第２の実施形態における半導体装置が低温環境下に置かれると、半導体装置全体が熱収縮する。その際に、第１のバスバー３の線膨張係数と第２の樹脂部６の線膨張係数の大小関係から、第１のバスバー３が第２の樹脂部６よりも半導体素子１の内周方向に縮もうとする。   When the semiconductor device according to the second embodiment is placed in a low temperature environment, the entire semiconductor device is thermally contracted. At this time, the first bus bar 3 is more in the inner peripheral direction of the semiconductor element 1 than the second resin portion 6 because of the magnitude relationship between the linear expansion coefficient of the first bus bar 3 and the linear expansion coefficient of the second resin portion 6. Try to shrink.

図４は、低温環境下に置かれた半導体装置の第１のバスバー３が収縮した状態を示す図である。図４では、収縮する前の第１のバスバー３の大きさを波線３ｃで示している。   FIG. 4 is a diagram showing a state where the first bus bar 3 of the semiconductor device placed in a low temperature environment is contracted. In FIG. 4, the magnitude | size of the 1st bus-bar 3 before shrinking is shown with the wavy line 3c.

第１の実施形態における半導体装置と同様に、第１のバスバー３の凸部３ａの上面と第１の樹脂部５の接合面は、第１の樹脂部５と第２の樹脂部６との接合面と略平行である。また、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面の接合強度は、第１のバスバー３の凸部３ａの上面と第１の樹脂部５との接合面の接合強度よりも大きい。従って、第１のバスバー３の内周方向への変位に対して、第１の樹脂部５の薄肉部５ｂと、第１のバスバー３の凸部３ａの接合面が剥離して、薄肉部５ｂが変形する。これにより、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面に加わるせん断応力を低下させることができ、この接合面が剥離することを防止することにより、第１のバスバー３と第２のバスバー４間で絶縁信頼性が低下することを防ぐことができる。   Similar to the semiconductor device in the first embodiment, the upper surface of the convex portion 3 a of the first bus bar 3 and the joint surface of the first resin portion 5 are formed between the first resin portion 5 and the second resin portion 6. It is substantially parallel to the joint surface. Further, the bonding strength of the bonding surface between the roughened surface 5 a of the first resin portion 5 and the second resin portion 6 is determined by the bonding between the upper surface of the convex portion 3 a of the first bus bar 3 and the first resin portion 5. It is larger than the bonding strength of the surface. Therefore, with respect to the displacement of the first bus bar 3 in the inner circumferential direction, the joint surface between the thin portion 5b of the first resin portion 5 and the convex portion 3a of the first bus bar 3 is peeled off, and the thin portion 5b. Is deformed. Thereby, the shear stress applied to the joint surface between the roughened surface 5a of the first resin part 5 and the second resin part 6 can be reduced, and by preventing the joint surface from peeling, It is possible to prevent the insulation reliability from decreasing between the first bus bar 3 and the second bus bar 4.

また、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面が剥離することなく、第１のバスバー３と第２のバスバー４との間の絶縁性を確保することができるので、第１のバスバー３と第２のバスバー４間の絶縁距離を小さくすることができる。これにより、絶縁信頼性を確保したまま、半導体装置のサイズを小さくすることができる。   Moreover, the insulation between the 1st bus-bar 3 and the 2nd bus-bar 4 is ensured, without peeling the joint surface of the rough surface 5a of the 1st resin part 5, and the 2nd resin part 6. FIG. Therefore, the insulation distance between the first bus bar 3 and the second bus bar 4 can be reduced. Thereby, the size of the semiconductor device can be reduced while ensuring the insulation reliability.

以上、第２の実施形態における半導体装置によれば、半導体装置が熱収縮する場合でも、相対的に強度が小さい第１の樹脂部５とバスバー３との接合面が先に剥離して変形することで、第１の樹脂部５と第２の樹脂部６の接合面が剥離するのを防いで、バスバー３と、半導体素子面と同電位の部材との間の絶縁信頼性が低下するのを防ぐことができる。また、第１の樹脂部５と第２の樹脂部６の接合面が剥離した場合を考慮してバスバー３と、半導体素子面と同電位の部材との間の絶縁距離を大きくする必要が無いので、半導体装置を小型化することができる。   As described above, according to the semiconductor device of the second embodiment, even when the semiconductor device thermally contracts, the joint surface between the first resin portion 5 and the bus bar 3 having relatively low strength is peeled off first and deformed. As a result, the joint surface between the first resin portion 5 and the second resin portion 6 is prevented from peeling off, and the insulation reliability between the bus bar 3 and the member having the same potential as that of the semiconductor element surface is reduced. Can be prevented. Moreover, it is not necessary to increase the insulation distance between the bus bar 3 and the member having the same potential as that of the semiconductor element surface in consideration of the case where the joint surface between the first resin portion 5 and the second resin portion 6 is peeled off. Therefore, the semiconductor device can be reduced in size.

＜第３の実施形態＞
図５は、第３の実施形態における半導体装置の上面図である。また、図６は、図５に示す第３の実施形態における半導体装置をＢ−Ｂ平面で切断した場合の断面図である。 <Third Embodiment>
FIG. 5 is a top view of the semiconductor device according to the third embodiment. FIG. 6 is a cross-sectional view of the semiconductor device according to the third embodiment shown in FIG. 5 taken along the BB plane.

第１および第２の実施形態における半導体装置では、半導体素子１の上面は、ボンディングワイヤ７によって、第２のバスバー４に接続される構成となっていた。第３の実施形態における半導体装置では、半導体素子１の上面は、はんだ等の接合部材８によって、第２のバスバー４に接合されている。すなわち、第３の実施形態における半導体装置は、半導体素子１の両面にバスバー３、４が接続され、半導体素子１によって発生した熱を半導体素子１の両面のバスバー３、４を介して放熱することができる、放熱性の良い両面放熱型半導体装置である。   In the semiconductor device according to the first and second embodiments, the upper surface of the semiconductor element 1 is connected to the second bus bar 4 by the bonding wire 7. In the semiconductor device according to the third embodiment, the upper surface of the semiconductor element 1 is joined to the second bus bar 4 by a joining member 8 such as solder. That is, in the semiconductor device according to the third embodiment, the bus bars 3 and 4 are connected to both surfaces of the semiconductor element 1, and the heat generated by the semiconductor element 1 is radiated through the bus bars 3 and 4 on both surfaces of the semiconductor element 1. It is a double-sided heat dissipation type semiconductor device with good heat dissipation.

第３の実施形態における半導体装置において、第１のバスバー３は、第１の樹脂部５側であって、図６の左右方向に延伸した凸部３ａを有している。２つの凸部３ａの上面および下面はそれぞれ、第１の樹脂部５に接している。第１のバスバー３の凸部３ａのそれぞれの上面と第１の樹脂部５との接合面は、第１の樹脂部５と第２の樹脂部６との接合面と略平行である。   In the semiconductor device according to the third embodiment, the first bus bar 3 has a convex portion 3a on the first resin portion 5 side and extending in the left-right direction in FIG. The upper surface and the lower surface of the two convex portions 3 a are in contact with the first resin portion 5. The joint surface between each upper surface of the convex portion 3 a of the first bus bar 3 and the first resin portion 5 is substantially parallel to the joint surface between the first resin portion 5 and the second resin portion 6.

また、２つの凸部３ａの上部において、第２の樹脂部６と接する第１の樹脂部５の接合面は、その表面が粗い粗化面５ａを有する。このような構成とすることにより、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面の接合強度は、第１のバスバー３の凸部３ａの上面と第１の樹脂部５との接合面の接合強度よりも大きくなる。   In addition, in the upper part of the two convex portions 3a, the joint surface of the first resin portion 5 that contacts the second resin portion 6 has a roughened surface 5a whose surface is rough. With such a configuration, the bonding strength of the bonding surface between the roughened surface 5a of the first resin portion 5 and the second resin portion 6 is the same as that of the upper surface of the convex portion 3a of the first bus bar 3 and the first surface. It becomes larger than the joint strength of the joint surface with the resin part 5.

なお、第１のバスバー３と第２の樹脂部６の線膨張係数の大小関係は、第１の実施形態と同じとする。すなわち、第１のバスバー３の線膨張係数よりも、第２の樹脂部６の線膨張係数の方が小さい。   The magnitude relationship between the linear expansion coefficients of the first bus bar 3 and the second resin portion 6 is the same as that in the first embodiment. That is, the linear expansion coefficient of the second resin portion 6 is smaller than the linear expansion coefficient of the first bus bar 3.

第３の実施形態における半導体装置が高温環境下に置かれると、第１の実施形態における半導体装置と同様に、第１の樹脂部５の薄肉部５ｂと、第１のバスバー３の凸部３ａの接合面が剥離して、薄肉部５ｂが変形する。これにより、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面に加わるせん断応力を低下させることができ、この接合面が剥離することを防止して第１のバスバー３と第２のバスバー４間で絶縁信頼性が低下することを防ぐことができる。   When the semiconductor device according to the third embodiment is placed in a high temperature environment, the thin portion 5b of the first resin portion 5 and the convex portion 3a of the first bus bar 3 are provided, as in the semiconductor device according to the first embodiment. The joint surface is peeled off, and the thin portion 5b is deformed. As a result, the shear stress applied to the joint surface between the roughened surface 5a of the first resin part 5 and the second resin part 6 can be reduced, and the joint surface can be prevented from peeling off and the first surface can be prevented. It is possible to prevent the insulation reliability from decreasing between the bus bar 3 and the second bus bar 4.

また、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面が剥離することなく、第１のバスバー３と第２のバスバー４との間の絶縁性を確保することができるので、第１のバスバー３と第２のバスバー４間の絶縁距離を小さくすることができる。これにより、絶縁信頼性を確保したまま、半導体装置のサイズを小さくすることができる。   Moreover, the insulation between the 1st bus-bar 3 and the 2nd bus-bar 4 is ensured, without peeling the joint surface of the rough surface 5a of the 1st resin part 5, and the 2nd resin part 6. FIG. Therefore, the insulation distance between the first bus bar 3 and the second bus bar 4 can be reduced. Thereby, the size of the semiconductor device can be reduced while ensuring the insulation reliability.

以上、第３の実施形態における半導体装置によれば、半導体素子１の両面にバスバー３、４を接続する構成であっても、第１の実施形態における半導体装置と同様に、半導体装置が熱膨張する際に、相対的に接合強度が小さい第１の樹脂部５とバスバー３との接合面が先に剥離して変形することで、第１の樹脂部５と第２の樹脂部６の接合面が剥離するのを防いで、バスバー３と、半導体素子面と同電位の部材との間の絶縁信頼性が低下するのを防ぐことができる。また、第１の樹脂部５と第２の樹脂部６の接合面が剥離した場合を考慮してバスバー３と、半導体素子面と同電位の部材との間の絶縁距離を大きくする必要が無いので、半導体装置を小型化することができる。   As described above, according to the semiconductor device in the third embodiment, even when the bus bars 3 and 4 are connected to both surfaces of the semiconductor element 1, the semiconductor device is thermally expanded in the same manner as the semiconductor device in the first embodiment. When the first resin portion 5 and the second resin portion 6 are bonded, the bonding surface between the first resin portion 5 and the bus bar 3 having relatively low bonding strength is peeled off first and deformed. It is possible to prevent the surface from peeling off, and to prevent the insulation reliability between the bus bar 3 and the member having the same potential as that of the semiconductor element surface from being lowered. Moreover, it is not necessary to increase the insulation distance between the bus bar 3 and the member having the same potential as that of the semiconductor element surface in consideration of the case where the joint surface between the first resin portion 5 and the second resin portion 6 is peeled off. Therefore, the semiconductor device can be reduced in size.

＜第４の実施形態＞
第４の実施形態における半導体装置の構成は、第３の実施形態における半導体装置の構成と同じである。第４の実施形態における半導体装置が第３の実施形態における半導体装置と異なるのは、第１のバスバー３と第２の樹脂部６の線膨張係数の大小関係である。すなわち、第４の実施形態における半導体装置では、第１のバスバー３の線膨張係数よりも、第２の樹脂部６の線膨張係数の方が大きい。ここでは、第１のバスバー３の線膨張係数は、第１の実施形態と同じ（１７ｐｐｍ／℃）とし、第２の樹脂部６の線膨張係数を、２０ｐｐｍ／℃とする。 <Fourth Embodiment>
The configuration of the semiconductor device in the fourth embodiment is the same as the configuration of the semiconductor device in the third embodiment. The semiconductor device in the fourth embodiment differs from the semiconductor device in the third embodiment in the magnitude relationship between the linear expansion coefficients of the first bus bar 3 and the second resin portion 6. That is, in the semiconductor device according to the fourth embodiment, the linear expansion coefficient of the second resin portion 6 is larger than the linear expansion coefficient of the first bus bar 3. Here, the linear expansion coefficient of the first bus bar 3 is the same as that of the first embodiment (17 ppm / ° C.), and the linear expansion coefficient of the second resin portion 6 is 20 ppm / ° C.

第４の実施形態における半導体装置が低温環境下に置かれると、半導体装置全体が熱収縮する。その際に、第１のバスバー３の線膨張係数と第２の樹脂部６の線膨張係数の大小関係から、第１のバスバー３が第２の樹脂部６よりも半導体素子１の外周方向に縮もうとする。   When the semiconductor device according to the fourth embodiment is placed in a low temperature environment, the entire semiconductor device is thermally contracted. At that time, the first bus bar 3 is closer to the outer peripheral direction of the semiconductor element 1 than the second resin portion 6 because of the magnitude relationship between the linear expansion coefficient of the first bus bar 3 and the linear expansion coefficient of the second resin portion 6. Try to shrink.

第３の実施形態における半導体装置と同様に、第１のバスバー３の凸部３ａの上面と第１の樹脂部５の接合面は、第１の樹脂部５と第２の樹脂部６との接合面と略平行である。また、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面の接合強度は、第１のバスバー３の凸部３ａの上面と第１の樹脂部５との接合面の接合強度よりも大きい。従って、第１のバスバー３の外周方向の変位に対して、第１の樹脂部５の薄肉部５ｂと、第１のバスバー３の凸部３ａの接合面が剥離して、薄肉部５ｂが変形する。これにより、第１の樹脂部５の粗化面５ａと第２の樹脂部６との接合面に加わるせん断応力を低下させることができ、この接合面が剥離することを防止して第１のバスバー３と第２のバスバー４間で絶縁信頼性が低下することを防ぐことができる。   Similar to the semiconductor device according to the third embodiment, the upper surface of the convex portion 3 a of the first bus bar 3 and the bonding surface of the first resin portion 5 are formed between the first resin portion 5 and the second resin portion 6. It is substantially parallel to the joint surface. Further, the bonding strength of the bonding surface between the roughened surface 5 a of the first resin portion 5 and the second resin portion 6 is determined by the bonding between the upper surface of the convex portion 3 a of the first bus bar 3 and the first resin portion 5. It is larger than the bonding strength of the surface. Therefore, with respect to the displacement in the outer peripheral direction of the first bus bar 3, the joint surface between the thin portion 5b of the first resin portion 5 and the convex portion 3a of the first bus bar 3 is peeled off, and the thin portion 5b is deformed. To do. As a result, the shear stress applied to the joint surface between the roughened surface 5a of the first resin part 5 and the second resin part 6 can be reduced, and the joint surface can be prevented from peeling off and the first surface can be prevented. It is possible to prevent the insulation reliability from decreasing between the bus bar 3 and the second bus bar 4.

以上、第４の実施形態における半導体装置によれば、半導体素子１の両面にバスバー３、４を接続する構成であっても、第２の実施形態における半導体装置と同様、半導体装置が熱収縮する際に、相対的に接合強度が小さい第１の樹脂部５とバスバー３との接合面が先に剥離して変形することで、第１の樹脂部５と第２の樹脂部６の接合面が剥離するのを防いで、バスバー３と、半導体素子面と同電位の部材との間の絶縁信頼性が低下するのを防ぐことができる。また、第１の樹脂部５と第２の樹脂部６の接合面が剥離した場合を考慮してバスバー３と、半導体素子面と同電位の部材との間の絶縁距離を大きくする必要が無いので、半導体装置を小型化することができる。   As described above, according to the semiconductor device in the fourth embodiment, even when the bus bars 3 and 4 are connected to both surfaces of the semiconductor element 1, the semiconductor device thermally shrinks as in the semiconductor device in the second embodiment. At this time, the joint surface between the first resin part 5 and the second resin part 6 is formed by the first joint part between the first resin part 5 and the bus bar 3 having relatively low joint strength being peeled and deformed first. Is prevented from being peeled off, and it is possible to prevent the insulation reliability between the bus bar 3 and the member having the same potential as that of the semiconductor element surface from being lowered. Moreover, it is not necessary to increase the insulation distance between the bus bar 3 and the member having the same potential as that of the semiconductor element surface in consideration of the case where the joint surface between the first resin portion 5 and the second resin portion 6 is peeled off. Therefore, the semiconductor device can be reduced in size.

本発明は、上述した第１〜第４の実施形態に限定されることはない。例えば、上述した各実施形態では、第２の樹脂部６と接する第１の樹脂部５の接合面は、その表面が粗い粗化面５ａを有する構成とすることにより、第１の樹脂部５と第２の樹脂部６との接合面の接合強度を、第１の樹脂部５とバスバー３との接合面の接合強度よりも大きくした。しかしながら、第１の樹脂部５と第２の樹脂部６との接合強度を向上させるような中間材を、第１の樹脂部５と第２の樹脂部６との間に介在させることによって、第１の樹脂部５と第２の樹脂部６との接合面の接合強度を、第１の樹脂部５とバスバー３との接合面の接合強度よりも大きくすることもできる。このような中間材としては、例えば、ポリイミドやポリアミドの樹脂からなる薄膜層がある。   The present invention is not limited to the first to fourth embodiments described above. For example, in each of the above-described embodiments, the first resin portion 5 is configured such that the bonding surface of the first resin portion 5 in contact with the second resin portion 6 has a roughened surface 5a. The bonding strength of the bonding surface between the first resin portion 5 and the second resin portion 6 was made larger than the bonding strength of the bonding surface between the first resin portion 5 and the bus bar 3. However, by interposing an intermediate material that improves the bonding strength between the first resin portion 5 and the second resin portion 6 between the first resin portion 5 and the second resin portion 6, The bonding strength of the bonding surface between the first resin portion 5 and the second resin portion 6 can be made larger than the bonding strength of the bonding surface between the first resin portion 5 and the bus bar 3. Examples of such an intermediate material include a thin film layer made of a polyimide or polyamide resin.

１…半導体素子
２…接合部材
３…第１のバスバー
４…第２のバスバー
５…第１の樹脂部
６…第２の樹脂部
８…接合部材 DESCRIPTION OF SYMBOLS 1 ... Semiconductor element 2 ... Joining member 3 ... 1st bus bar 4 ... 2nd bus bar 5 ... 1st resin part 6 ... 2nd resin part 8 ... Joining member

Claims (4)

電源に接続されたバスバーと、
前記バスバーの表面に載置され、表裏面の電極面のうちの少なくとも一方の電極面が前記バスバーに電気的に接続された半導体素子と、
第１の樹脂材で形成され、枠状の形状で前記バスバーの外周を覆って前記バスバーと接合する第１の樹脂部と、
第２の樹脂材で形成され、前記枠状の第１の樹脂部の内部に充填されて前記半導体素子をモールドするとともに、前記第１の樹脂部および前記バスバーと接合する第２の樹脂部と、
を備え、
前記バスバーは、前記第１の樹脂部側に突出した凸部を有し、
前記凸部の上面および下面は、前記第１の樹脂部と接合しており、
前記第１の樹脂部と前記第２の樹脂部との接合面の接合強度は、前記第１の樹脂部と前記バスバーとの接合面の接合強度よりも大きい、
ことを特徴とする半導体装置。 A busbar connected to the power supply;
A semiconductor element mounted on the surface of the bus bar, wherein at least one of the electrode surfaces of the front and back surfaces is electrically connected to the bus bar;
A first resin part formed of a first resin material and covering the outer periphery of the bus bar in a frame-like shape and joined to the bus bar;
A second resin part formed of a second resin material, filled in the inside of the frame-shaped first resin part to mold the semiconductor element, and joined to the first resin part and the bus bar; ,
With
The bus bar has a convex portion protruding toward the first resin portion side,
The upper surface and the lower surface of the convex part are joined to the first resin part,
The bonding strength of the bonding surface between the first resin portion and the second resin portion is greater than the bonding strength of the bonding surface between the first resin portion and the bus bar.
A semiconductor device. 前記第１の樹脂部と前記第２の樹脂部との接合面は、前記第１の樹脂部と前記バスバーとの接合面と略平行である、
ことを特徴とする請求項１に記載の半導体装置。 The joint surface between the first resin portion and the second resin portion is substantially parallel to the joint surface between the first resin portion and the bus bar.
The semiconductor device according to claim 1. 前記第１の樹脂部と前記第２の樹脂部との接合面における前記第１の樹脂部の少なくとも一部の表面は、前記第１の樹脂部と前記バスバーとの接合面における前記第１の樹脂部の表面に比べて粗い、
ことを特徴とする請求項１または請求項２に記載の半導体装置。 The surface of at least a part of the first resin portion at the joint surface between the first resin portion and the second resin portion is the first surface at the joint surface between the first resin portion and the bus bar. Rough compared to the surface of the resin part,
The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device. 前記半導体素子の表裏面の電極面は、それぞれ異なるバスバーに電気的に接続されている、
ことを特徴とする請求項１から請求項３のいずれか一項に記載の半導体装置。 The electrode surfaces on the front and back surfaces of the semiconductor element are electrically connected to different bus bars,
The semiconductor device according to any one of claims 1 to 3, characterized in that.
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