JP5846805B2 - 微粒子捕集装置及び真空処理装置 - Google Patents
微粒子捕集装置及び真空処理装置 Download PDFInfo
- Publication number
- JP5846805B2 JP5846805B2 JP2011178849A JP2011178849A JP5846805B2 JP 5846805 B2 JP5846805 B2 JP 5846805B2 JP 2011178849 A JP2011178849 A JP 2011178849A JP 2011178849 A JP2011178849 A JP 2011178849A JP 5846805 B2 JP5846805 B2 JP 5846805B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- fine particles
- imaging unit
- optical fiber
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010419 fine particle Substances 0.000 title claims description 59
- 238000003384 imaging method Methods 0.000 claims description 32
- 239000013307 optical fiber Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 description 26
- 239000007789 gas Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 argon ion Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Electrostatic Separation (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011178849A JP5846805B2 (ja) | 2010-08-19 | 2011-08-18 | 微粒子捕集装置及び真空処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010184080 | 2010-08-19 | ||
| JP2010184080 | 2010-08-19 | ||
| JP2011178849A JP5846805B2 (ja) | 2010-08-19 | 2011-08-18 | 微粒子捕集装置及び真空処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012064935A JP2012064935A (ja) | 2012-03-29 |
| JP2012064935A5 JP2012064935A5 (https=) | 2014-08-28 |
| JP5846805B2 true JP5846805B2 (ja) | 2016-01-20 |
Family
ID=46060273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011178849A Expired - Fee Related JP5846805B2 (ja) | 2010-08-19 | 2011-08-18 | 微粒子捕集装置及び真空処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5846805B2 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190011535A (ko) * | 2017-07-25 | 2019-02-07 | 주식회사 지유디이에스 | 정전기 공기 필터 및 이를 이용한 공기 정화 장치 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6054748A (ja) * | 1983-09-05 | 1985-03-29 | Dengen Autom Kk | 集塵電極の集塵限界検出装置 |
| JPH07117459B2 (ja) * | 1987-10-20 | 1995-12-18 | 富士通株式会社 | 真空内測定装置 |
| JPH0243961A (ja) * | 1988-08-03 | 1990-02-14 | Anelva Corp | 真空処理装置の集麈装置 |
| US6184489B1 (en) * | 1998-04-13 | 2001-02-06 | Nec Corporation | Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles |
| JP3301408B2 (ja) * | 1998-04-13 | 2002-07-15 | 日本電気株式会社 | 半導体製造装置のパーティクル除去装置及びパーティクルの除去方法 |
| JP2001160537A (ja) * | 1999-12-02 | 2001-06-12 | Sharp Corp | 電子デバイスの製造装置および電子デバイスの製造方法 |
| JP2004247680A (ja) * | 2003-02-17 | 2004-09-02 | Sharp Corp | ダスト捕集・回収装置 |
| US20080142481A1 (en) * | 2006-12-18 | 2008-06-19 | White John M | In-situ particle collector |
-
2011
- 2011-08-18 JP JP2011178849A patent/JP5846805B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190011535A (ko) * | 2017-07-25 | 2019-02-07 | 주식회사 지유디이에스 | 정전기 공기 필터 및 이를 이용한 공기 정화 장치 |
| KR102063997B1 (ko) | 2017-07-25 | 2020-01-08 | 주식회사 지유디이에스 | 정전기 공기 필터 및 이를 이용한 공기 정화 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012064935A (ja) | 2012-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5472550A (en) | Method and apparatus for protecting a substrate surface from contamination using the photophoretic effect | |
| US6125789A (en) | Increasing the sensitivity of an in-situ particle monitor | |
| TWI412074B (zh) | A cleaning method for a component in a vacuum chamber, and a substrate processing device | |
| CN105824041B (zh) | 光学分光分析装置 | |
| TWI857989B (zh) | 薄膜清潔裝置 | |
| CN103635987B (zh) | 试料的制作装置、制作方法以及使用该制作装置和制作方法的带电粒子线装置 | |
| TW200910433A (en) | Apparatus for cleaning substrate and method for cleaning substrate | |
| KR20210094116A (ko) | 광학 디바이스 제작을 위한 전자 빔 장치 | |
| JP5846805B2 (ja) | 微粒子捕集装置及び真空処理装置 | |
| JP5867046B2 (ja) | 極紫外露光マスク用防塵装置及び極紫外露光装置 | |
| TWI313025B (en) | Apparatus for removing particles and method for removing particles | |
| WO2008037065A1 (en) | Method and apparatus of forming domain inversion structures in a nonlinear ferroelectric substrate | |
| JP2012064968A (ja) | 表面加工方法及び装置 | |
| Chen et al. | Orthokeratology lens care: Surface treatment by an atmospheric pulsed microwave air plasma jet | |
| CN103954537B (zh) | 一种干式颗粒粒度测量方法 | |
| RU2413330C1 (ru) | Способ получения атомно-тонких монокристаллических пленок | |
| JP2013535105A (ja) | 光学システム | |
| JP2007324154A (ja) | プラズマ処理装置 | |
| KR102815781B1 (ko) | 플라즈마 처리 장치 | |
| JPH01283359A (ja) | プラズマ処理装置 | |
| Mu | SiN Drum Resonator Fabrication and Integrated Actuation Using Substrate Capacitors | |
| JP5378723B2 (ja) | 電子線照射装置及び被覆電線の製造方法 | |
| TWI821868B (zh) | 離子銑削裝置 | |
| KR20100008052A (ko) | 화학기상증착 장치 | |
| JP2009231668A (ja) | 基板処理装置および基板処理方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140714 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140714 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150518 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150609 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150622 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151117 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151124 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5846805 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |