JP5845929B2 - Base substrate, electronic device, method for manufacturing base substrate, and method for manufacturing electronic device - Google Patents

Base substrate, electronic device, method for manufacturing base substrate, and method for manufacturing electronic device Download PDF

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JP5845929B2
JP5845929B2 JP2012015338A JP2012015338A JP5845929B2 JP 5845929 B2 JP5845929 B2 JP 5845929B2 JP 2012015338 A JP2012015338 A JP 2012015338A JP 2012015338 A JP2012015338 A JP 2012015338A JP 5845929 B2 JP5845929 B2 JP 5845929B2
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electrode
mounting
base substrate
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JP2013157386A (en
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尚広 中川
尚広 中川
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Seiko Epson Corp
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本発明はベース基板、電子デバイス、ベース基板の製造方法、及び電子デバイスの製造方法に関するものである。   The present invention relates to a base substrate, an electronic device, a method for manufacturing a base substrate, and a method for manufacturing an electronic device.

図１０に示すように、特許文献１には、ベース基板１０２とキャップ１０４により形成された内部空間に圧電振動片１０６を配置した圧電デバイス１００（電子デバイス）が開示されている。   As shown in FIG. 10, Patent Document 1 discloses a piezoelectric device 100 (electronic device) in which a piezoelectric vibrating piece 106 is arranged in an internal space formed by a base substrate 102 and a cap 104.

この圧電デバイス１００は、ベース基板１０２に貫通孔１０８を形成し、この貫通孔１０８を貫通電極１１０により充填している。貫通電極１１０のベース基板１２の内面（上面）に露出した位置に搭載電極１１２が設けられている。また、圧電振動片１０６を、導電性接着剤１１４を用いて搭載電極１１２に機械的・電気的に接続している。そして、真空環境下で、キャップ１０４をベース基板１０２の上面に接合して圧電振動片１０６を気密封止している。よって、貫通電極１１０は圧電振動片１０６と電気的に接続されている。   In the piezoelectric device 100, a through hole 108 is formed in a base substrate 102, and the through hole 108 is filled with a through electrode 110. A mounting electrode 112 is provided at a position exposed on the inner surface (upper surface) of the base substrate 12 of the through electrode 110. In addition, the piezoelectric vibrating piece 106 is mechanically and electrically connected to the mounting electrode 112 using a conductive adhesive 114. In a vacuum environment, the cap 104 is bonded to the upper surface of the base substrate 102 to hermetically seal the piezoelectric vibrating piece 106. Therefore, the through electrode 110 is electrically connected to the piezoelectric vibrating piece 106.

上記構成において、貫通電極１１０は、ベース基板１０２の下面から搭載電極１１２が配置された上面に向かって断面の径が小さくなるテーパー形状となっている。これにより、真空封止に起因して貫通電極１１０に対して内部空間に引き込まれる力が作用しても、貫通電極１１０は、貫通孔１０８との楔効果により、貫通電極１１０の貫通孔１０８に対する嵌め込みが促進され、内部空間の気密封止を維持している。   In the above configuration, the through electrode 110 has a tapered shape in which the diameter of the cross section decreases from the lower surface of the base substrate 102 toward the upper surface on which the mounting electrode 112 is disposed. As a result, even if a force drawn into the internal space acts on the through electrode 110 due to vacuum sealing, the through electrode 110 can be applied to the through hole 108 of the through electrode 110 due to the wedge effect with the through hole 108. The fitting is promoted and the hermetic sealing of the internal space is maintained.

図１１に示すように、特許文献２は、特許文献１と同様の圧電デバイス２００（電子デバイス）である。しかし、貫通孔２０２は、ベース基板１０２の厚み方向の中央部の断面の径が最も小さくなる鼓型の壁面を有している。この圧電デバイス２００は、貫通孔２０２の壁面とベース基板１０２の上面及び下面に互いに電気的に接続する電極２０４が設けられている。また、ベース基板１０２の上面から端子用の合金２０６を貫通孔２０２に設置して合金２０６を加熱溶融させることにより、貫通孔２０２を封止するとともに圧電振動片１０６と電極２０４を電気的に接続する貫通電極を形成している。そして、真空環境下でキャップ１０４をベース基板１０２の上面に接合することにより、圧電振動片１０６を気密封止している。   As shown in FIG. 11, Patent Literature 2 is a piezoelectric device 200 (electronic device) similar to Patent Literature 1. However, the through hole 202 has a drum-shaped wall surface with the smallest diameter of the cross section of the central portion of the base substrate 102 in the thickness direction. The piezoelectric device 200 is provided with electrodes 204 that are electrically connected to each other on the wall surface of the through hole 202 and the upper and lower surfaces of the base substrate 102. Also, the terminal alloy 206 is placed in the through hole 202 from the upper surface of the base substrate 102 and the alloy 206 is heated and melted to seal the through hole 202 and to electrically connect the piezoelectric vibrating piece 106 and the electrode 204. A through electrode is formed. The piezoelectric vibrating piece 106 is hermetically sealed by bonding the cap 104 to the upper surface of the base substrate 102 in a vacuum environment.

上記構成においても、内部空間は真空となっているが、貫通孔２０２のベース基板の下面側と合金２０６との間で上述の楔効果を奏し、内部空間の気密封止を維持している。   Even in the above configuration, the internal space is in a vacuum, but the wedge effect described above is exerted between the lower surface side of the base substrate of the through-hole 202 and the alloy 206, and the hermetic sealing of the internal space is maintained.

特開２００８−２５２８０５号公報JP 2008-252805 A 特開平６−２８３９５１号公報JP-A-6-283951

一方、上述の圧電デバイスに代表される電子デバイスを小型化するためには、ベース基板の面積を小さくする必要がある。しかし、特許文献１の場合、貫通電極のベース基板の下面に露出する部分がベース基板の上面に露出する部分より大きくなるため、ベース基板の下面に配置する実装電極も必然的に大きな面積を有するものになる。また、特許文献２の場合、ベース基板１０２の下面の貫通孔２０２の周囲を囲む電極の大きさは、ベース基板１０２の上面の貫通孔２０２の周囲を囲む電極の大ききと同程度となる。よって、実装電極の配置パターンの自由度が低下して、顧客のニーズに対応しきれなくなるといった問題があった。   On the other hand, in order to reduce the size of an electronic device typified by the piezoelectric device described above, it is necessary to reduce the area of the base substrate. However, in the case of Patent Document 1, the portion of the through electrode exposed on the lower surface of the base substrate is larger than the portion of the through electrode exposed on the upper surface of the base substrate, so that the mounting electrode disposed on the lower surface of the base substrate necessarily has a large area. Become a thing. In the case of Patent Document 2, the size of the electrode surrounding the through hole 202 on the lower surface of the base substrate 102 is approximately the same as the size of the electrode surrounding the periphery of the through hole 202 on the upper surface of the base substrate 102. Therefore, there is a problem that the degree of freedom of the arrangement pattern of the mounting electrodes is lowered, and the customer needs cannot be met.

もちろん、貫通電極のベース基板の下面に露出した部分の一部を残してマスクをし、貫通電極の露出部分に新たな電極材料を埋め込んで実装電極を形成するという方法もあるが、低背化に不利な構造となるばかりか製造工程が増えてコストがかかるといった問題があった。   Of course, there is a method to leave a part of the exposed part of the bottom surface of the base substrate of the through electrode as a mask and embed a new electrode material in the exposed part of the through electrode to form a mounting electrode. In addition to the disadvantageous structure, the manufacturing process is increased and the cost is increased.

さらに、特許文献１、２の構成の場合、貫通電極と実装電極との界面、及び貫通電極と搭載電極との界面において、接合が不十分な場合、または経年劣化により、その界面を通じて外気がリークして圧電振動片に対する気密が破壊される虞がある。   Further, in the case of the configurations of Patent Documents 1 and 2, outside air leaks through the interface when the bonding is insufficient or due to aging deterioration at the interface between the through electrode and the mounting electrode and the interface between the through electrode and the mounting electrode. As a result, the airtightness of the piezoelectric vibrating piece may be destroyed.

そこで、本発明は上記問題点に着目し、製造工程を増やすことなく実装電極を小さく形成可能なベース基板、これを用いた電子デバイス、ベース基板の製造方法、及び電子デバイスの製造方法を提供することを目的とする。   Accordingly, the present invention pays attention to the above-mentioned problems, and provides a base substrate capable of forming a mounting electrode small without increasing the number of manufacturing steps, an electronic device using the same, a method for manufacturing the base substrate, and a method for manufacturing the electronic device. For the purpose.

本発明は、上述の課題の少なくとも一部を解決するためになされたものであり、以下の形態、または適用例として実現することが可能である。
第１の形態に係るベース基板の製造方法は、基板を貫通する貫通孔であって、前記貫通孔の前記基板の厚み方向の少なくとも一部において、前記基板の一方の面側より他方の面側の幅が小さい壁面を形成することにより、前記他方の面側の開口部の幅を前記一方の面側の開口部の内径より小さくした前記貫通孔を形成する工程と、前記貫通孔内に設ける貫通電極と、前記一方の面に電子部品を搭載するための搭載電極と、前記他方の面に設ける実装電極と、をメッキにより一体的に形成する工程と、を含むことを特徴とする。
第２の形態に係るベース基板の製造方法は、第１の形態に係るベース基板の製造方法において、前記貫通孔を形成する工程を、レーザー、またはサンドブラストにより行うことを特徴とする。
本形態に係る電子デバイスの製造方法は、第１又は第２の形態に係る製造方法により製造された前記ベース基板上の前記搭載電極に電子部品を配置する工程と、前記電子部品を収容する蓋体を前記ベース基板に接合して、前記電子部品を封止する工程と、を含むことを特徴とする。
［適用例１］電子部品が搭載される搭載電極を有する搭載面、前記搭載面の裏面側となり実装電極を有する実装面、および前記搭載面と前記実装面との間を貫通する貫通孔を有する絶縁基板と、前記搭載電極と前記実装電極とを電気的に接続し、前記貫通孔を埋めている貫通電極と、を備え、前記貫通孔は、前記貫通孔の前記絶縁基板の厚み方向の少なくとも一部において、その内径が前記搭載面側よりも前記実装面側の方が小さいテーパー形状の壁面を有することにより、前記実装面側の開口部の内径が前記搭載面側の開口部の内径よりも小さくなっていることを特徴とするベース基板。 SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
The base substrate manufacturing method according to the first aspect is a through-hole penetrating a substrate, wherein at least a part of the through-hole in the thickness direction of the substrate is on the other surface side from the one surface side of the substrate. Forming the through hole in which the width of the opening on the other surface side is smaller than the inner diameter of the opening on the one surface side by forming a wall surface having a small width, and providing in the through hole And a step of integrally forming a through electrode, a mounting electrode for mounting an electronic component on the one surface, and a mounting electrode provided on the other surface by plating .
The base substrate manufacturing method according to the second aspect is characterized in that, in the base substrate manufacturing method according to the first aspect , the step of forming the through hole is performed by laser or sand blasting.
An electronic device manufacturing method according to the present embodiment includes a step of arranging an electronic component on the mounting electrode on the base substrate manufactured by the manufacturing method according to the first or second embodiment, and a lid for storing the electronic component. by joining the body to the base substrate, characterized in that it comprises a and a step of sealing the electronic component.
[Application Example 1] A mounting surface having a mounting electrode on which an electronic component is mounted, a mounting surface having a mounting electrode on the back side of the mounting surface, and a through-hole penetrating between the mounting surface and the mounting surface. An insulating substrate; and a through electrode that electrically connects the mounting electrode and the mounting electrode and fills the through hole, wherein the through hole is at least in the thickness direction of the insulating substrate of the through hole. In some cases, by having a tapered wall surface whose inner diameter is smaller on the mounting surface side than on the mounting surface side, the inner diameter of the opening portion on the mounting surface side is larger than the inner diameter of the opening portion on the mounting surface side. A base substrate that is also smaller.

上記構成により、貫通電極は、貫通孔の内壁に倣ってテーパー状に形成される。よって、貫通電極の実装面側は、貫通電極の搭載面側より小さくなるので、貫通電極の実装面に露出した部分に形成する実装電極を小さく形成することができる。したがって、製造工程を増やすことなく実装電極を小さく形成可能なベース基板となる。   With the above configuration, the through electrode is formed in a tapered shape following the inner wall of the through hole. Therefore, since the mounting surface side of the through electrode is smaller than the mounting surface side of the through electrode, the mounting electrode formed on the portion exposed on the mounting surface of the through electrode can be formed small. Therefore, the base substrate can be formed with a small mounting electrode without increasing the number of manufacturing steps.

［適用例２］前記搭載電極、前記貫通電極及び前記実装電極は、一体的であることを特徴とする適用例１に記載のベース基板。
上記構成により、貫通孔の実装面側が搭載面側よりも早く埋まるので、少ないメッキ量で実装電極の平坦性を確保して、高品質化を図ることができる。また、ベース基板の搭載面側が真空封止されても、実装電極が貫通電極を支持することになるので、貫通電極の気密性を維持することができる。そして、搭載電極、貫通電極、実装電極は、一体的に形成されているので、製造工程を削減してコストを抑制するとともに、各電極同士の間に界面は存在せず、界面を通じた気密破壊を回避することができる。 Application Example 2 A base substrate according to Application Example 1, wherein the mounting electrode, the through electrode, and the mounting electrode are integrated.
With the above configuration, the mounting surface side of the through hole is filled earlier than the mounting surface side, so that the flatness of the mounting electrode can be ensured with a small amount of plating and high quality can be achieved. Moreover, even if the mounting surface side of the base substrate is vacuum-sealed, the mounting electrode supports the through electrode, so that the airtightness of the through electrode can be maintained. And since the mounting electrode, the through electrode, and the mounting electrode are integrally formed, the manufacturing process is reduced and the cost is reduced, and there is no interface between the electrodes, and airtight destruction through the interface Can be avoided.

［適用例３］適用例１または２に記載のベース基板の前記搭載電極に電子部品を配置し、蓋体を前記ベース基板に接合することで前記電子部品を封止してなることを特徴とする電子デバイス。
上記構成により、適用例１と同様の理由により、製造工程を増やすことなく実装電極を小さく形成可能とし、気密性を確保した電子デバイスとなる。 Application Example 3 An electronic component is disposed on the mounting electrode of the base substrate according to Application Example 1 or 2, and the electronic component is sealed by bonding a lid to the base substrate. Electronic devices.
With the above configuration, for the same reason as in Application Example 1, the mounting electrode can be formed small without increasing the number of manufacturing steps, and an electronic device that ensures airtightness is obtained.

［適用例４］絶縁基板を貫通する貫通孔であって、前記貫通孔の前記絶縁基板の厚み方向の少なくとも一部において、前記絶縁基板の一方の面側より他方の面側の内径が小さいテーパー形状となる壁面を形成することにより、前記他方の面側の開口部の内径を前記一方の面側の開口部の内径より小さくした前記貫通孔を形成する工程と、前記貫通孔内に設ける貫通電極と、前記一方の面に電子部品を搭載するための搭載電極と、前記他方の面に設ける実装電極と、を一体的に形成する工程と、を含むことを特徴とするベース基板の製造方法。
上記方法により、適用例１、２と同様の理由により、製造工程を増やすことなく実装電極を小さく形成可能なベース基板を製造することができる。 Application Example 4 A through hole penetrating an insulating substrate, wherein at least part of the through hole in the thickness direction of the insulating substrate has a smaller inner diameter on the other surface side than the one surface side of the insulating substrate. Forming the through hole in which the inner diameter of the opening on the other surface side is smaller than the inner diameter of the opening on the one surface side by forming a wall surface having a shape; and a through hole provided in the through hole And a step of integrally forming an electrode, a mounting electrode for mounting an electronic component on the one surface, and a mounting electrode provided on the other surface. .
By the above method, for the same reason as in application examples 1 and 2, a base substrate capable of forming a mounting electrode small can be manufactured without increasing the manufacturing process.

［適用例５］前記一体的に形成する工程を、メッキにより行なうことを特徴とする適用例４に記載のベース基板の製造方法。
上記方法により、搭載電極、貫通電極、実装電極を一回のメッキ工程により形成することができるので、製造工程を削減してコストを抑制するとともに、各電極同士の間に界面は存在せず、界面を通じた気密破壊を回避することができる。 Application Example 5 The method for manufacturing a base substrate according to Application Example 4, wherein the integrally forming step is performed by plating.
By the above method, the mounting electrode, the through electrode, and the mounting electrode can be formed by a single plating process, so that the manufacturing process is reduced and the cost is reduced, and there is no interface between the electrodes, Airtight destruction through the interface can be avoided.

［適用例６］前記貫通孔を形成する工程を、レーザー、またはサンドブラストにより行うことを特徴とする適用例４または５に記載のベース基板の製造方法。
上記方法により、貫通孔を容易に形成することができる。 Application Example 6 The method for manufacturing a base substrate according to Application Example 4 or 5, wherein the step of forming the through hole is performed by laser or sand blasting.
Through holes can be easily formed by the above method.

［適用例７］適用例４乃至６のいずれか１例に記載の製造方法により製造された前記ベース基板上の前記搭載電極に電子部品を配置する工程と、前記電子部品を収容する蓋体を前記ベース基板に接合して、前記電子部品を封止する工程と、を含むことを特徴とする電子デバイスの製造方法。   [Application Example 7] A step of arranging an electronic component on the mounting electrode on the base substrate manufactured by the manufacturing method according to any one of Application Examples 4 to 6, and a lid for housing the electronic component. Joining the base substrate and sealing the electronic component. A method for manufacturing an electronic device, comprising:

上記方法により、適用例１、２と同様の理由により、製造工程を増やすことなく実装電極を小さく形成可能とし、気密性を確保した電子デバイスを製造することができる。   By the above-described method, for the same reason as in application examples 1 and 2, it is possible to manufacture an electronic device in which the mounting electrode can be formed small and the airtightness is ensured without increasing the manufacturing process.

本実施形態の圧電デバイスの断面図である。It is sectional drawing of the piezoelectric device of this embodiment. 本実施形態のベース基板の平面図である。It is a top view of the base substrate of this embodiment. 本実施形態のベース基板の底面図である。It is a bottom view of the base substrate of this embodiment. 本実施形態のベース基板の製造工程（その１）を示す図である。It is a figure which shows the manufacturing process (the 1) of the base substrate of this embodiment. 本実施形態のベース基板の製造工程（その２）を示す図である。It is a figure which shows the manufacturing process (the 2) of the base substrate of this embodiment. 本実施形態の圧電デバイスの変形例の断面図である。It is sectional drawing of the modification of the piezoelectric device of this embodiment. 本実施形態のベース基板の変形例の平面図である。It is a top view of the modification of the base substrate of this embodiment. 本実施形態の貫通孔の変形例の断面図である。It is sectional drawing of the modification of the through-hole of this embodiment. 本実施形態の貫通電極等の変形例の断面図である。It is sectional drawing of modifications, such as a penetration electrode of this embodiment. 特許文献１に記載の圧電デバイスの模式図である。6 is a schematic diagram of a piezoelectric device described in Patent Document 1. FIG. 特許文献２に記載の圧電デバイスの模式図である。6 is a schematic diagram of a piezoelectric device described in Patent Document 2. FIG.

以下、本発明を図に示した実施形態を用いて詳細に説明する。但し、この実施形態に記載される構成要素、種類、組み合わせ、形状、その相対配置などは特定的な記載がない限り、この発明の範囲をそれのみに限定する主旨ではなく単なる説明例に過ぎない。   Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings. However, the components, types, combinations, shapes, relative arrangements, and the like described in this embodiment are merely illustrative examples and not intended to limit the scope of the present invention only unless otherwise specified. .

図１に、本実施形態の圧電デバイスの断面図を示す。また、図２に、本実施形態のベース基板の平面図を示し、図３に、本実施形態のベース基板の底面図を示す。   FIG. 1 shows a cross-sectional view of the piezoelectric device of the present embodiment. 2 shows a plan view of the base substrate of the present embodiment, and FIG. 3 shows a bottom view of the base substrate of the present embodiment.

本実施形態の圧電デバイス１０（電子デバイス）は、ベース基板１２と、ベース基板１２に搭載される圧電振動片３２と、ベース基板１２に接合されるとともに圧電振動片３２（電子部品）を気密封止するキャップ４０と、により構成されている。   The piezoelectric device 10 (electronic device) of the present embodiment is bonded to the base substrate 12, the piezoelectric vibrating piece 32 mounted on the base substrate 12, the base substrate 12, and the piezoelectric vibrating piece 32 (electronic component) is hermetically sealed. And a cap 40 to be stopped.

圧電振動片３２は、水晶等の圧電材料により形成され、音叉型振動片、双音叉型振動片、ＡＴカット水晶基板による厚みすべり振動片、ＳＡＷ共振片、ジャイロ振動片等を適用することができる。圧電振動片３２は、基端３４が導電性接着剤３８によりベース基板１２に接合されて固定端となり、先端３６が自由端となり、片持ち支持状態でベース基板１２に支持されている。   The piezoelectric vibrating piece 32 is formed of a piezoelectric material such as quartz, and a tuning fork type vibrating piece, a double tuning fork type vibrating piece, a thickness shear vibrating piece using an AT-cut quartz substrate, a SAW resonance piece, a gyro vibrating piece, or the like can be applied. . The piezoelectric vibrating piece 32 is bonded to the base substrate 12 by a conductive adhesive 38 to be a fixed end, and the distal end 36 is a free end, and is supported by the base substrate 12 in a cantilevered state.

詳細は図示しないが、圧電振動片３２の振動部には、振動部を固有の共振周波数で振動させる一対の励振電極が設けられている。また、各励振電極からは引出電極が引き出され、各引出電極は圧電振動片３２の基端３４の下面にまで延出している。   Although not shown in detail, the vibrating portion of the piezoelectric vibrating piece 32 is provided with a pair of excitation electrodes that vibrate the vibrating portion at a specific resonance frequency. In addition, an extraction electrode is extracted from each excitation electrode, and each extraction electrode extends to the lower surface of the base end 34 of the piezoelectric vibrating piece 32.

ベース基板１２は、セラミック等の絶縁基板により形成され、圧電振動片３２を搭載する搭載面１４と、搭載面１４の裏面であって実装先の基板（不図示）に接合する実装面１６と、を有する。   The base substrate 12 is formed of an insulating substrate such as ceramic, and includes a mounting surface 14 on which the piezoelectric vibrating piece 32 is mounted, a mounting surface 16 that is the back surface of the mounting surface 14 and is bonded to a mounting destination substrate (not shown), Have

ベース基板１２には、貫通孔１８（図４（ｂ）参照）が設けられている。貫通孔１８（１８Ａ、１８Ｂ）は、ベース基板１２の厚み方向の断面形状が円形となる内壁を有し、搭載面１４から実装面１６までの間で、内径が単調に小さくなるテーパー形状の壁面を有している。よって、貫通孔１８において、実装面１６側の開口部の内径が搭載面１４側の開口部の内径よりも小さくなっている。   The base substrate 12 is provided with a through hole 18 (see FIG. 4B). The through hole 18 (18A, 18B) has an inner wall whose cross-sectional shape in the thickness direction of the base substrate 12 is circular, and a tapered wall surface whose inner diameter monotonically decreases from the mounting surface 14 to the mounting surface 16. have. Therefore, in the through hole 18, the inner diameter of the opening on the mounting surface 16 side is smaller than the inner diameter of the opening on the mounting surface 14 side.

この貫通孔１８は、搭載面１４側から研削用のレーザーの照射、あるいはサンドブラストにより形成される。レーザー照射及びサンドブラストは、ベース基板１２の深さ方向のみならず、基板表面に平行な方向にもベース基板１２の加工を進行させる。よって、レーザー照射及びサンドブラストを搭載面１４側から行なうと、搭載面１４側の方が実装面１６側より前記平行な方向の加工が進行するので、結果的に実装面１６側の内径が搭載面１４側の内径よりも小さくなるテーパー形状の貫通孔１８が形成される。   This through hole 18 is formed from the mounting surface 14 side by grinding laser irradiation or sandblasting. Laser irradiation and sandblasting process the base substrate 12 not only in the depth direction of the base substrate 12 but also in a direction parallel to the substrate surface. Therefore, when laser irradiation and sand blasting are performed from the mounting surface 14 side, the mounting surface 14 side is processed in the parallel direction more than the mounting surface 16 side. As a result, the inner diameter on the mounting surface 16 side is the mounting surface 16 side. A tapered through hole 18 that is smaller than the inner diameter on the 14 side is formed.

本実施形態において貫通孔１８は、平面視でベース基板１２の対角線上の２箇所に設けられている。このうち、貫通孔１８Ａは、上述の引出電極（不図示）の真下となる位置に設けられている。また貫通孔１８Ｂは、圧電振動片３２の先端３６側となる位置に設けられている。   In the present embodiment, the through holes 18 are provided at two locations on the diagonal line of the base substrate 12 in plan view. Among these, the through hole 18A is provided at a position directly below the above-described extraction electrode (not shown). The through hole 18B is provided at a position on the tip 36 side of the piezoelectric vibrating piece 32.

貫通孔１８内には貫通電極２０（２０Ａ，２０Ｂ）が埋め込まれている。貫通電極２０は、貫通孔１８の内壁に倣って外形が形成され、搭載面１４側及び実装面１６側に露出している。よって、貫通電極２０の実装面１６に露出した部分の直径は、貫通電極２０の搭載面１４に露出した部分の直径よりも小さくなっている（図２、図３参照）。   A through electrode 20 (20A, 20B) is embedded in the through hole 18. The through electrode 20 has an outer shape that follows the inner wall of the through hole 18 and is exposed on the mounting surface 14 side and the mounting surface 16 side. Therefore, the diameter of the portion exposed to the mounting surface 16 of the through electrode 20 is smaller than the diameter of the portion exposed to the mounting surface 14 of the through electrode 20 (see FIGS. 2 and 3).

ベース基板１２の搭載面１４には、搭載電極２２（２２Ａ，２２Ｂ）が設けられている。搭載電極２２は、圧電振動片３２の下面に引き出された引出電極（不図示）に対向する位置に設けられている。このうち、搭載電極２２Ａは、貫通電極２０Ａの搭載面１４に露出した部分を覆うように設けられている。そして搭載電極２２Ａ上には、導電性接着剤３８が塗布され、この導電性接着剤３８が圧電振動片３２の引出電極（不図示）の一方に接合することで、搭載電極２２Ａと引出電極（不図示）の一方とが電気的に接続される。   On the mounting surface 14 of the base substrate 12, mounting electrodes 22 (22A, 22B) are provided. The mounting electrode 22 is provided at a position facing an extraction electrode (not shown) extracted on the lower surface of the piezoelectric vibrating piece 32. Among these, the mounting electrode 22A is provided so as to cover a portion exposed to the mounting surface 14 of the through electrode 20A. A conductive adhesive 38 is applied onto the mounting electrode 22A, and the conductive adhesive 38 is joined to one of the extraction electrodes (not shown) of the piezoelectric vibrating piece 32, whereby the mounting electrode 22A and the extraction electrode ( (Not shown) is electrically connected.

一方、貫通電極２０Ｂの搭載面１４に露出した位置には、接続電極２４が設らけれている。そして、搭載電極２２Ｂ（図２）からは、引き回し電極２２Ｂａが延出し接続電極２４に接続している。搭載電極２２Ｂ上には導電性接着剤３８が塗布され、この導電性接着剤３８が引出電極（不図示）の他方と接合することで、搭載電極２２Ｂと引出電極（不図示）の他方とが電気的に接続される。   On the other hand, a connection electrode 24 is provided at a position exposed on the mounting surface 14 of the through electrode 20B. The lead-out electrode 22Ba extends from the mounting electrode 22B (FIG. 2) and is connected to the connection electrode 24. A conductive adhesive 38 is applied on the mounting electrode 22B, and this conductive adhesive 38 is joined to the other of the extraction electrodes (not shown), whereby the mounting electrode 22B and the other of the extraction electrodes (not shown) are connected. Electrically connected.

ベース基板１２の実装面１６の貫通電極２０が露出した位置には実装電極２６（２６Ａ、２６Ｂ）が設けられている。実装電極２６Ａは、貫通電極２０Ａの実装面１６に露出した部分を覆うように設けられ、実装電極２６Ｂは、貫通電極２０Ｂの実装面１６に露出した部分を覆うように設けられている。しかし、貫通電極２０の実装面１６に露出した部分の直径は搭載面１４に露出した部分より小さいので、実装電極２６の寸法を小さく設計することができる。よって、ベース基板１２の面積を小さくしても実装電極２６の配置パターンの自由度を損なうことはない。   Mounting electrodes 26 (26A, 26B) are provided at positions where the through electrodes 20 of the mounting surface 16 of the base substrate 12 are exposed. The mounting electrode 26A is provided so as to cover a portion exposed on the mounting surface 16 of the through electrode 20A, and the mounting electrode 26B is provided so as to cover a portion exposed on the mounting surface 16 of the through electrode 20B. However, since the diameter of the portion exposed to the mounting surface 16 of the through electrode 20 is smaller than the portion exposed to the mounting surface 14, the size of the mounting electrode 26 can be designed to be small. Therefore, even if the area of the base substrate 12 is reduced, the degree of freedom of the arrangement pattern of the mounting electrodes 26 is not impaired.

実装電極２６のうち、実装電極２６Ａは、貫通電極２０Ａ、搭載電極２２Ａ、及び導電性接着剤３８を介して引出電極（不図示）の一方と電気的に接続する。一方、実装電極２６Ｂ（図３）は、貫通電極２０Ｂ、接続電極２４、引き回し電極２２Ｂａ、搭載電極２２Ｂ、及び導電性接着剤３８を介して引出電極（不図示）の他方と電気的に接続する。したがって、実装電極２６に交流電圧を印加することにより、圧電振動片３２の振動部（不図示）は固有の共振周波数で振動する。   Of the mounting electrodes 26, the mounting electrode 26 </ b> A is electrically connected to one of the extraction electrodes (not shown) via the through electrode 20 </ b> A, the mounting electrode 22 </ b> A, and the conductive adhesive 38. On the other hand, the mounting electrode 26B (FIG. 3) is electrically connected to the other of the lead electrodes (not shown) through the through electrode 20B, the connection electrode 24, the lead-out electrode 22Ba, the mounting electrode 22B, and the conductive adhesive 38. . Therefore, when an AC voltage is applied to the mounting electrode 26, the vibrating portion (not shown) of the piezoelectric vibrating piece 32 vibrates at a specific resonance frequency.

実装電極２６は、実装先の基板（不図示）に設けられた接続電極（不図示）に接合される。本実施形態では、実装電極２６は実装面１６に２つ設ければ十分であるが、実装先に安定的に接合させるため実装電極２６と同一形状のダミー電極２８が実装面１６に設けられ、このダミー電極２８を実装先の基板（不図示）の電極（不図示）に接合している。   The mounting electrode 26 is joined to a connection electrode (not shown) provided on a mounting destination substrate (not shown). In the present embodiment, it is sufficient to provide two mounting electrodes 26 on the mounting surface 16, but a dummy electrode 28 having the same shape as the mounting electrode 26 is provided on the mounting surface 16 in order to stably join the mounting electrode 26. The dummy electrode 28 is bonded to an electrode (not shown) of a mounting board (not shown).

貫通孔１８の内壁、搭載電極２２の形成位置、実装電極２６の形成位置等にはシード電極３０が設けられている。シード電極３０は、後述のようにスパッタ等により形成され、メッキ用の電極として用いられる。そして、シード電極３０上に貫通電極２０、搭載電極２２、引き回し電極２２Ｂａ、接続電極２４、及び実装電極２６が成長している。なお、上記各種電極は、Ｃｕ（銅）等の伝導率の高い金属により形成されている。   A seed electrode 30 is provided on the inner wall of the through hole 18, the formation position of the mounting electrode 22, the formation position of the mounting electrode 26, and the like. The seed electrode 30 is formed by sputtering or the like as will be described later, and is used as an electrode for plating. The through electrode 20, the mounting electrode 22, the routing electrode 22 Ba, the connection electrode 24, and the mounting electrode 26 are grown on the seed electrode 30. The various electrodes are made of a metal having high conductivity such as Cu (copper).

キャップ４０（蓋体）は、金属により形成され、下面が開口した凹部を有し、この凹部に圧電振動片３２が収容可能となっている。キャップ４０の下面を搭載面１４に接合することにより、圧電振動片３２を収容し、かつ圧電振動片３２を気密封止（真空封止）する。   The cap 40 (lid body) is made of metal and has a recess having an open bottom surface, and the piezoelectric vibrating piece 32 can be accommodated in the recess. By joining the lower surface of the cap 40 to the mounting surface 14, the piezoelectric vibrating piece 32 is accommodated and the piezoelectric vibrating piece 32 is hermetically sealed (vacuum sealed).

なお、詳細は図示しないが、ベース基板１２のダミー電極２８に対応する位置に貫通電極を設け、貫通電極の搭載面１４に露出した位置に接続電極を設け、この接続電極をキャップ４０に接続するようにしてもよい。これにより、ダミー電極２８を接地してキャップ４０を接地させ、圧電振動片３２に対する外部からの電気的な干渉を回避することができる。   Although not shown in detail, a through electrode is provided at a position corresponding to the dummy electrode 28 of the base substrate 12, a connection electrode is provided at a position exposed on the mounting surface 14 of the through electrode, and the connection electrode is connected to the cap 40. You may do it. As a result, the dummy electrode 28 is grounded and the cap 40 is grounded, so that external electrical interference with the piezoelectric vibrating piece 32 can be avoided.

図４、図５に、本実施形態のベース基板の製造工程を示す。次に本実施形態のベース基板１２の製造工程について説明する。図４（ａ）に示すように、ベース基板１２と同一寸法の基板母材４２を用意し、図４（ｂ）に示すように、基板母材４２の搭載面１４となる側からレーザー照射またはサンドブラストによりテーパー形状の貫通孔１８を形成する。   4 and 5 show the manufacturing process of the base substrate of this embodiment. Next, the manufacturing process of the base substrate 12 of this embodiment is demonstrated. As shown in FIG. 4A, a substrate base material 42 having the same dimensions as the base substrate 12 is prepared, and as shown in FIG. 4B, laser irradiation or from the side that becomes the mounting surface 14 of the substrate base material 42 is performed. A tapered through hole 18 is formed by sandblasting.

図４（ｃ）に示すように、スパッタ等の方法を用いて基板母材４２の表面にＣｕ（銅）等の金属のシード電極３０を形成する。このとき、貫通孔１８はテーパー状に形成されているため、スパッタを用いても貫通孔１８の内壁に容易にシード電極３０を形成することができる。なお、図４（ｃ）において、シード電極３０は全て繋がっているものとする。   As shown in FIG. 4C, a seed electrode 30 of a metal such as Cu (copper) is formed on the surface of the substrate base material 42 using a method such as sputtering. At this time, since the through hole 18 is tapered, the seed electrode 30 can be easily formed on the inner wall of the through hole 18 even if sputtering is used. In FIG. 4C, it is assumed that all the seed electrodes 30 are connected.

図４（ｄ）に示すように、シード電極３０上の貫通電極２０、搭載電極２２、引き回し電極２２Ｂａ（図４では不図示）、接続電極２４（図４では不図示）、実装電極２６、ダミー電極２８に対応する位置を除いてレジスト膜４４を形成する。   As shown in FIG. 4D, the through electrode 20 on the seed electrode 30, the mounting electrode 22, the routing electrode 22Ba (not shown in FIG. 4), the connection electrode 24 (not shown in FIG. 4), the mounting electrode 26, a dummy A resist film 44 is formed except for the position corresponding to the electrode 28.

図４（ｅ）に示すように、シード電極３０及びレジスト膜４４を形成した基板母材４２を、Ｃｕ（銅）等の金属メッキ材料の電解液に投入してシード電極３０に電界を印加する。このときシード電極３０は、電極形成部分以外の部分で露出させておき、その部分に電界印加用のケーブル（不図示）を接続しておく。すると、シード電極３０が露出した部分で、電極材料が成長してゆく。図４（ｅ）においては、貫通電極２０を形成する電極材料は未だ厚みが薄いので、貫通電極２０の搭載面１４側及び実装面１６側が未だ開口しており、実装電極２６及び搭載電極２２等は、未だ中央部に孔を有することになる。   As shown in FIG. 4E, the substrate base material 42 on which the seed electrode 30 and the resist film 44 are formed is put into an electrolytic solution of a metal plating material such as Cu (copper) and an electric field is applied to the seed electrode 30. . At this time, the seed electrode 30 is exposed at a portion other than the electrode formation portion, and an electric field application cable (not shown) is connected to the portion. Then, the electrode material grows in the portion where the seed electrode 30 is exposed. In FIG. 4E, since the electrode material forming the through electrode 20 is still thin, the mounting surface 14 side and the mounting surface 16 side of the through electrode 20 are still open. Still has a hole in the center.

図５（ａ）に示すように、電極材料の成長が進行すると、貫通電極２０の実装面１６側の開口した部分が塞がり、実装電極２６の中央部にあった孔も塞がることになる。しかし、搭載電極２２の中央部で開口した凹部４６が残ることになる。   As shown in FIG. 5A, when the growth of the electrode material proceeds, the opening portion on the mounting surface 16 side of the through electrode 20 is closed, and the hole in the central portion of the mounting electrode 26 is also closed. However, the recess 46 opened at the center of the mounting electrode 22 remains.

図５（ｂ）に示すように、電極材料の成長が図５（ａ）の場合よりも進行すると、貫通孔１８が貫通電極２０を形成する電極材料により埋まり始め、凹部４６の直径及び深さが小さくなっていく。   As shown in FIG. 5 (b), when the growth of the electrode material proceeds more than in the case of FIG. 5 (a), the through hole 18 begins to be filled with the electrode material forming the through electrode 20, and the diameter and depth of the recess 46 are obtained. Is getting smaller.

図５（ｃ）に示すように、電極材料の成長が図５（ｂ）の場合よりも進行すると、貫通孔１８が貫通電極２０を形成する電極材料により完全に埋まり、凹部４６も消滅する。
そして、図５（ｄ）に示すように、レジスト膜４４を除去し、図５（ｅ）に示すように、シード電極３０の電極材料が成長した部分以外の部分を、エッチング等を用いて除去することによりベース基板１２が得られる。 As shown in FIG. 5C, when the growth of the electrode material proceeds more than in the case of FIG. 5B, the through hole 18 is completely filled with the electrode material forming the through electrode 20, and the recess 46 disappears.
Then, as shown in FIG. 5D, the resist film 44 is removed, and as shown in FIG. 5E, portions other than the portion where the electrode material of the seed electrode 30 is grown are removed by etching or the like. Thus, the base substrate 12 is obtained.

ベース基板１２の搭載電極２２Ａ，２２Ｂに導電性接着剤３８を塗布し、導電性接着剤３８と引出電極（不図示）を接合する形で圧電振動片３２をベース基板１２に支持させ、真空環境下でキャップ４０を搭載面１４に接合することにより圧電デバイス１０が得られる。   A conductive adhesive 38 is applied to the mounting electrodes 22A and 22B of the base substrate 12, and the piezoelectric vibrating piece 32 is supported on the base substrate 12 in such a manner that the conductive adhesive 38 and an extraction electrode (not shown) are joined together, and a vacuum environment The piezoelectric device 10 is obtained by bonding the cap 40 to the mounting surface 14 below.

本実施形態のベース基板１２の製造方法は、一回のメッキ工程で、貫通電極２０、搭載電極２２、引き回し電極２２Ｂａ、接続電極２４、実装電極２６、ダミー電極２８を一体で形成することができる点が大きなメリットである。したがって、製造工程を増やすことなくこれらの電極を形成することができるのでコストを抑制することができる。さらに貫通電極２０、搭載電極２２、接続電極２４、及び実装電極２６は、一体で形成されるので電極間での接触抵抗が低減される。また、貫通孔１８が上述のようにテーパー形状を有するため、貫通孔１８の実装面１６側が搭載面１４側よりも早く埋まるので、少ないメッキ量で実装電極２６の平坦性を確保して、高品質化を図ることができる。   In the method for manufacturing the base substrate 12 of this embodiment, the through electrode 20, the mounting electrode 22, the lead-out electrode 22Ba, the connection electrode 24, the mounting electrode 26, and the dummy electrode 28 can be integrally formed in a single plating step. The point is a big merit. Therefore, since these electrodes can be formed without increasing the number of manufacturing steps, the cost can be suppressed. Furthermore, since the through electrode 20, the mounting electrode 22, the connection electrode 24, and the mounting electrode 26 are integrally formed, the contact resistance between the electrodes is reduced. Further, since the through hole 18 has a tapered shape as described above, the mounting surface 16 side of the through hole 18 is filled earlier than the mounting surface 14 side, so that the flatness of the mounting electrode 26 can be ensured with a small amount of plating, and high Quality can be improved.

本実施形態では、貫通電極２０が実装面１６から搭載面１４に向かって断面の直径が大きくなる形状を有している。よって、搭載面１４とキャップ４０により形成された内部空間が真空となっている場合は、貫通電極２０が内部空間側に引き寄せられるとも思われる。   In the present embodiment, the through electrode 20 has a shape in which the cross-sectional diameter increases from the mounting surface 16 toward the mounting surface 14. Therefore, when the internal space formed by the mounting surface 14 and the cap 40 is in a vacuum, it seems that the through electrode 20 is attracted to the internal space side.

しかし、本実施形態では、貫通電極２０と実装電極２６が一体に形成され、実装電極２６が貫通電極２０を支持する形となるので、貫通電極２０が内部空間側に引き寄せられることはなく、内部空間の気密性が低下することはない。そして、搭載電極２２、貫通電極２０、実装電極２６は、一体的に形成されているので、製造工程を削減してコストを抑制するとともに、各電極同士の間に界面は存在せず、界面を通じた気密破壊を回避することができる。   However, in the present embodiment, the through electrode 20 and the mounting electrode 26 are integrally formed, and the mounting electrode 26 supports the through electrode 20, so that the through electrode 20 is not attracted to the internal space side, and the internal electrode The airtightness of the space is not reduced. Since the mounting electrode 22, the through electrode 20, and the mounting electrode 26 are integrally formed, the manufacturing process is reduced and the cost is reduced, and there is no interface between the electrodes. Airtight destruction can be avoided.

図６に、本実施形態の圧電デバイスの変形例の断面図を示し、図７に、本実施形態のベース基板の変形例の平面図を示す。変形例の圧電デバイス１０Ａ（電子デバイス）の基本構成は、図１の圧電デバイス１０と共通するが、キャップ４０の代わりに側壁部４８とリッド５２（蓋体）を用いている。側壁部４８は、ベース基板１２と同一の材料で形成され、矩形のリング形状を有している。そして、側壁部４８の下面が搭載面１４の周縁となる位置に接合されている。よって側壁部４８の上面は搭載面１４よりも高くなっており、側壁部４８及び搭載面１４により圧電振動片３２を収容する凹部５０が形成される。   FIG. 6 shows a cross-sectional view of a modification of the piezoelectric device of the present embodiment, and FIG. 7 shows a plan view of a modification of the base substrate of the present embodiment. The basic configuration of the piezoelectric device 10 </ b> A (electronic device) of the modification is common to the piezoelectric device 10 of FIG. 1, but uses a side wall 48 and a lid 52 (lid) instead of the cap 40. The side wall portion 48 is formed of the same material as the base substrate 12 and has a rectangular ring shape. And the lower surface of the side wall part 48 is joined to the position which becomes the periphery of the mounting surface 14. Therefore, the upper surface of the side wall 48 is higher than the mounting surface 14, and the side wall 48 and the mounting surface 14 form a recess 50 that accommodates the piezoelectric vibrating piece 32.

リッド５２は、金属により形成され、側壁部４８の上面に接合して圧電振動片３２を気密封止している。なお、側壁部４８の上面に露出するとともに側壁部４８及びベース基板１２を連通し、ダミー電極２８に接続する貫通電極（不図示）を形成し、リッド５２を、ダミー電極２８を介して接地できるようにしてもよい。   The lid 52 is made of metal and is bonded to the upper surface of the side wall portion 48 to hermetically seal the piezoelectric vibrating piece 32. It is to be noted that a through electrode (not shown) that is exposed on the upper surface of the side wall portion 48 and communicates with the side wall portion 48 and the base substrate 12 to be connected to the dummy electrode 28 is formed, and the lid 52 can be grounded via the dummy electrode 28. You may do it.

変形例の圧電デバイス１０Ａの組立は、搭載面１４に側壁部４８を接合し、圧電振動片３２を搭載電極２２Ａ、２２Ｂに接続したのちにリッド５２を側壁部４８に接合する工程となる。よって、圧電振動片３２を側壁部４８の内側（凹部５０）に配置して、圧電振動片３２の気密封止時に接触等により圧電振動片３２を破損させる虞を回避することができる。   The assembly of the piezoelectric device 10 </ b> A according to the modification is a process of joining the side wall 48 to the mounting surface 14, connecting the piezoelectric vibrating piece 32 to the mounting electrodes 22 </ b> A and 22 </ b> B, and then joining the lid 52 to the side wall 48. Therefore, by arranging the piezoelectric vibrating piece 32 inside the side wall portion 48 (recess 50), the possibility of damaging the piezoelectric vibrating piece 32 due to contact or the like when the piezoelectric vibrating piece 32 is hermetically sealed can be avoided.

図８に、本実施形態の貫通孔の変形例の断面図を示し、図９に、本実施形態の貫通電極等の変形例の断面図を示す。本実施形態において、貫通孔１８は、ベース基板１２の厚み方向の全域にわたって壁面が傾斜したテーパー形状の壁面を有している。しかし、本発明における貫通孔は、ベース基板１２の厚み方向の少なくとも一部において、その内径が搭載面１４側よりも実装面１６側の方が小さいテーパー形状の壁面を有していればよい。そして、実装面１６側の開口部の内径が搭載面１４側の開口部の内径よりも小さくなっていればよい。   FIG. 8 shows a cross-sectional view of a modified example of the through hole of the present embodiment, and FIG. 9 shows a cross-sectional view of a modified example of the through electrode of the present embodiment. In the present embodiment, the through hole 18 has a tapered wall surface whose wall surface is inclined over the entire region in the thickness direction of the base substrate 12. However, the through hole in the present invention only needs to have a tapered wall surface whose inner diameter is smaller on the mounting surface 16 side than on the mounting surface 14 side in at least part of the thickness direction of the base substrate 12. The inner diameter of the opening on the mounting surface 16 side is only required to be smaller than the inner diameter of the opening on the mounting surface 14 side.

すなわち、変形例の貫通孔５４のように、ベース基板１２の搭載面１４側に円筒形の壁面５４ａを有し、実装面１６側においても円筒形の壁面５４ｃを有し、壁面５４ａ、５４ｃとの間にテーパー形状の壁面５４ｂを有するものしてもよい。   That is, like the through hole 54 of the modified example, the mounting surface 14 side of the base substrate 12 has a cylindrical wall surface 54a, and the mounting surface 16 side also has a cylindrical wall surface 54c. A tapered wall surface 54b may be provided therebetween.

ベース基板１２をセラミックで形成する場合、焼結前のベース基板１２の焼結材料に型を用いて壁面５４ａ、５４ｃを壁面として有する２つの凹部を形成する。焼結材料を焼結させたのち、壁面５４ａからレーザー照射、またはサンドブラストにより壁面５４ａを有する凹部の底面から、壁面５４ｃを有する凹部の底面までを貫通させ、壁面５４ａと壁面５４ｃとの間に壁面５４ｂを形成することにより貫通孔５４を形成することができる。または、焼結前のベース基板１２の焼結材料に型を用いて壁面５４ａ、５４ｂ、５４ｃを形成する型を押し付け、焼結材料を焼結させることにより貫通孔５４を形成することもできる。   When the base substrate 12 is formed of ceramic, two recesses having wall surfaces 54a and 54c as wall surfaces are formed using a mold as a sintering material of the base substrate 12 before sintering. After sintering the sintered material, the wall surface 54a is penetrated from the bottom surface of the recess having the wall surface 54a to the bottom surface of the recess having the wall surface 54c by laser irradiation or sandblasting, and the wall surface 54c is separated from the wall surface 54c. The through hole 54 can be formed by forming 54b. Alternatively, the through hole 54 can be formed by pressing a mold for forming the wall surfaces 54a, 54b, 54c using a mold against the sintered material of the base substrate 12 before sintering and sintering the sintered material.

図９に示すように、貫通孔５４の壁面と貫通孔５４を包含するベース基板１２の両面の領域にシード電極３０を配置し、シード電極３０を用いたメッキにより貫通電極５６、搭載電極２２、実装電極２６を一体的に形成することができる。なお、シード電極３０をスパッタで形成する場合、スパッタのターゲットに対するベース基板１２の向きをシード電極３０の形成途中で変更させる等の制御を行なうことにより、壁面５４ａ、５４ｃへのシード電極３０の形成が可能となる。また、スパッタのベース基板に対するメッキの成長過程は図４、図５と同様である。そして、一体的に形成された貫通電極５６、搭載電極２２、実装電極２６の作用効果は、上述のように一体的に形成された貫通電極２０、搭載電極２２、実装電極２６の作用効果と同様である。   As shown in FIG. 9, the seed electrode 30 is arranged on the both surfaces of the base substrate 12 including the wall surface of the through hole 54 and the through hole 54, and the through electrode 56, the mounting electrode 22, The mounting electrode 26 can be formed integrally. When the seed electrode 30 is formed by sputtering, the seed electrode 30 is formed on the wall surfaces 54a and 54c by performing control such as changing the orientation of the base substrate 12 with respect to the sputtering target during the formation of the seed electrode 30. Is possible. The growth process of the plating on the sputtered base substrate is the same as that shown in FIGS. The operational effects of the integrally formed through electrode 56, the mounting electrode 22, and the mounting electrode 26 are the same as the operational effects of the integrally formed through electrode 20, the mounting electrode 22, and the mounting electrode 26 as described above. It is.

なお、本実施形態において、貫通電極２０、搭載電極２２、実装電極２６を一体で形成する旨説明したが、電極間の接合強度を維持できる限り、または電極間の接触抵抗が無視できるほど小さい場合は、これらの電極を一体ではなく、別々の工程で形成してもよい。   In the present embodiment, it has been described that the through electrode 20, the mounting electrode 22, and the mounting electrode 26 are integrally formed. However, as long as the bonding strength between the electrodes can be maintained, or the contact resistance between the electrodes is small enough to be ignored. These electrodes may be formed in separate steps instead of being integrated.

１０………圧電デバイス、１２………ベース基板、１４………搭載面、１６………実装面、１８，１８Ａ，１８Ｂ………貫通孔、２０………貫通電極、２２，２２Ａ，２２Ｂ………搭載電極、２４………接続電極、２６………実装電極、２８………ダミー電極、３０………シード電極、３２………圧電振動片、３４………基端、３６………先端、３８………導電性接着剤、４０………キャップ、４２………基板母材、４４………レジスト膜、４６………凹部、４８………側壁部、５０………凹部、５２………リッド、５４………貫通孔、５６………貫通電極、１００………圧電デバイス、１０２………ベース基板、１０４………キャップ、１０６………圧電振動片、１０８………貫通孔、１１０………貫通電極、１１２………搭載電極、１１４………導電性接着剤、２００………圧電デバイス、２０２………貫通孔、２０４………電極、２０６………合金。 DESCRIPTION OF SYMBOLS 10 ......... Piezoelectric device, 12 ......... Base substrate, 14 ......... Mounting surface, 16 ......... Mounting surface, 18, 18A, 18B ......... Through hole, 20 ...... Through electrode, 22, 22A, 22B ......... Mounting electrode, 24 ......... Connecting electrode, 26 ......... Mounting electrode, 28 ......... Dummy electrode, 30 ......... Seed electrode, 32 ......... Piezoelectric vibrating piece, 34 ......... Base end, 36 ......... Tip, 38 ......... Conductive adhesive, 40 ......... Cap, 42 ......... Substrate base material, 44 ...... Resist film, 46 ......... Recess, 48 ......... Side wall, 50 ......... Recess, 52 ......... Lid, 54 ......... Through hole, 56 ......... Penetration electrode, 100 ......... Piezoelectric device, 102 ......... Base substrate, 104 ......... Cap, 106 ......... Piezoelectric Vibrating piece 108... Through hole 110... Through electrode 112. ......... conductive adhesive, 200 ......... piezoelectric device, 202 ......... through hole, 204 ......... electrode, 206 ......... alloy.

Claims (3)

絶縁基板を貫通する貫通孔であって、前記貫通孔の前記絶縁基板の厚み方向の少なくとも一部において、前記絶縁基板の一方の面側より他方の面側の内径が小さいテーパー形状となる壁面を形成することにより、前記他方の面側の開口部の内径を前記一方の面側の開口部の内径より小さくした前記貫通孔を形成する工程と、
前記貫通孔内に設ける貫通電極と、前記一方の面に電子部品を搭載するための搭載電極と、前記他方の面に設ける実装電極と、をメッキにより一体的に形成する工程と、
を含むことを特徴とするベース基板の製造方法。 A through-hole penetrating the insulating substrate, wherein at least a part of the through-hole in the thickness direction of the insulating substrate has a wall surface having a tapered shape with an inner diameter on the other surface side smaller than the one surface side of the insulating substrate Forming the through hole by forming an inner diameter of the opening on the other surface side smaller than an inner diameter of the opening on the one surface side; and
A step of integrally forming a through electrode provided in the through hole, a mounting electrode for mounting an electronic component on the one surface, and a mounting electrode provided on the other surface by plating ;
A method for manufacturing a base substrate, comprising: 前記貫通孔を形成する工程を、レーザー、またはサンドブラストにより行うことを特徴とする請求項１に記載のベース基板の製造方法。 The method for manufacturing a base substrate according to claim 1 , wherein the step of forming the through hole is performed by laser or sand blasting. 請求項１又は２に記載の製造方法により製造された前記ベース基板上の前記搭載電極に電子部品を配置する工程と、
前記電子部品を収容する蓋体を前記ベース基板に接合して、前記電子部品を封止する工程と、
を含むことを特徴とする電子デバイスの製造方法。 Disposing an electronic component on the mounting electrode on the base substrate manufactured by the manufacturing method according to claim 1 ,
Bonding the lid for housing the electronic component to the base substrate and sealing the electronic component;
The manufacturing method of the electronic device characterized by the above-mentioned.
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