JP5845013B2 - Light emitting device - Google Patents

Description

The present invention relates to a semiconductor device, particularly relates to a light-emitting device.

A semiconductor device such as a light emitting diode has a p-type semiconductor layer, an n-type semiconductor layer, and an active layer, and emits light by recombination of electrons and holes in the active layer. The light emitting diode has a plurality of electrodes that supply electrons and holes from an external circuit to the active layer (see, for example, Patent Document 1 and Patent Document 2).
Patent Document 1 Japanese Patent Application Laid-Open No. 2009-88521 Patent Document 2 US Patent Application Publication No. 2009/0121241

  In order to mount a semiconductor device on a printed circuit board or the like, it is preferable that a plurality of electrodes be provided on the same surface of the semiconductor light emitting element. Therefore, for example, in the case of manufacturing a light emitting diode, after removing a part of the active layer and the p-type semiconductor layer from the semiconductor layer in which the n-type semiconductor layer, the active layer, and the p-type semiconductor layer are stacked, And a method of manufacturing a semiconductor device by forming electrodes having different lengths on each of the p-type semiconductor layers.

  However, in the above method, it is necessary to remove a part of the semiconductor layer and form electrodes having different lengths in each of the n-type semiconductor layer and the p-type semiconductor layer before forming the electrode. In order to provide a plurality of electrodes on the same surface of the semiconductor light emitting element, high accuracy is required in both the step of removing a part of the semiconductor layer and the step of forming the electrodes. In particular, when manufacturing a plurality of semiconductor devices, it has been difficult to form a plurality of electrodes in each semiconductor device on the same surface of the semiconductor light emitting element.

The light emitting device according to the present invention, which has been made to solve the above problems, has a structure in which a substrate, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are stacked on the substrate. A light emitting structure; a lens disposed on the light emitting structure; a first terminal portion electrically connected to the first conductive semiconductor layer and exposed to the outside through the substrate; and the second A second terminal portion electrically connected to the conductive semiconductor layer and exposed to the outside through the substrate, wherein the second terminal portion includes the first terminal portion and the first conductive semiconductor layer. And a conductive via connected to the second conductive semiconductor layer through the active layer, and the lens is disposed so as not to cover a side surface of the light emitting structure. .

It is preferable to further have a bonding layer disposed between the light emitting structure and the substrate.
  The bonding layer preferably has electrical insulation.
  The bonding layer preferably has electrical conductivity.
  The substrate is preferably an electrically insulating substrate.
  The substrate is preferably an electrically conductive substrate.
  It is preferable to further have a translucent polymer layer disposed between the lens and the light emitting structure.
  It is preferable to further include a light conversion layer that is disposed between the lens and the light emitting structure and converts the wavelength of light emitted from the light emitting structure.
  The lens preferably includes a microlens array formed on a surface.

The light emitting device according to the present invention, which has been made to solve the above problems, has a structure in which a substrate, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are stacked on the substrate. The first light emitting structure is electrically connected to the first conductive semiconductor layer, and is electrically connected to the first terminal portion penetrating the substrate and exposed to the outside, and the second conductive semiconductor layer. A second terminal part that penetrates the substrate and is exposed to the outside, and the second terminal part penetrates the first terminal part, the first conductive semiconductor layer, and the active layer, and A region having a conductive via connected to the second conductive type semiconductor layer and penetrating the substrate in the first terminal portion is made of the same material as the substrate and is formed integrally with the substrate. And

1 is a schematic cross-sectional view of a semiconductor device 50 according to an embodiment of the present invention. 1 is a schematic cross-sectional view of a semiconductor device 100 according to an embodiment of the present invention. FIG. 4 is an enlarged cross-sectional view of a region between a light emitting structure 101 and a support substrate 102 in a semiconductor device 100 according to an embodiment of the present invention. It is sectional drawing which expands and shows lens 107 'which concerns on other embodiment of this invention. It is a schematic sectional drawing of the light emitting structure 101 in the manufacturing process of the semiconductor device 100 which concerns on one Embodiment of this invention. It is a schematic sectional drawing of the light emitting structure 101 in the manufacturing process of the semiconductor device 100 which concerns on one Embodiment of this invention. It is a schematic sectional drawing of the light emitting structure 101 in the manufacturing process of the semiconductor device 100 which concerns on one Embodiment of this invention. It is a schematic sectional drawing of the light emitting structure 101 in the manufacturing process of the semiconductor device 100 which concerns on one Embodiment of this invention. It is a schematic sectional drawing of the light emitting structure 101 in the manufacturing process of the semiconductor device 100 which concerns on one Embodiment of this invention. It is a schematic sectional drawing of the light emitting structure 101 in the manufacturing process of the semiconductor device 100 which concerns on one Embodiment of this invention. It is a schematic sectional drawing of the semiconductor device 200 which concerns on other embodiment of this invention. It is a schematic sectional drawing of the semiconductor device 300 which concerns on other embodiment of this invention. It is a schematic sectional drawing of the semiconductor device 400 which concerns on other embodiment of this invention. It is a schematic sectional drawing of the semiconductor device 500 which concerns on other embodiment of this invention. It is a schematic sectional drawing of the semiconductor device 600 which concerns on other embodiment of this invention. It is a schematic sectional drawing of the illuminating device 700 which concerns on other embodiment of this invention. An example of the configuration of the backlight 800 is shown.

  Hereinafter, an example of an embodiment of the present invention will be described in detail with reference to the drawings. The embodiments of the present invention can be modified in various other forms, and the technical scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided so that a person having an average knowledge in the technical field according to the present invention can understand the present invention. Accordingly, the shape and size of the components in the drawings may be exaggerated for the purpose of clarifying the description. The same reference numerals in the drawings denote the same components.

  FIG. 1 is a schematic cross-sectional view of a semiconductor device 50 according to an embodiment of the present invention. As shown in FIG. 1, the semiconductor device 100 according to the present embodiment includes a light emitting structure 101, a support substrate 102, a first terminal portion 103 a, a second terminal portion 103 b, and an insulator 104.

The light emitting structure 101 includes a first conductive semiconductor layer 203, an active layer 202, and a second conductive semiconductor layer 201. The first conductive semiconductor layer 203 and the second conductive semiconductor layer 201 are nitride-based semiconductors. For example, the first conductive semiconductor layer 203 and the second conductive semiconductor layer 201 are made of Al _x In _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). Having a composition. The first conductive semiconductor layer 203 and the second conductive semiconductor layer 201 may be a GaAs-based semiconductor or a GaP-based semiconductor.

  The first conductivity type semiconductor layer 203 is provided on the support substrate 102 and is doped with a first conductivity type impurity. The first conductivity type impurity is, for example, a p-type impurity. As an example, when the first conductive semiconductor layer 203 is GaN, the first conductive semiconductor layer 203 is doped with Zn or Mg as an impurity.

  The second conductivity type semiconductor layer 201 is doped with a second conductivity type impurity which is the opposite conductivity type to the first conductivity type. When the first conductivity type is p-type, the second conductivity type is n-type. As an example, when the second conductive semiconductor layer 201 is GaN, the second conductive semiconductor layer 201 is doped with Si, Ge, or Sn as an impurity.

  The active layer 202 emits light L having a predetermined energy by recombination of electrons and holes. For example, the active layer 202 has a multiple quantum well (MQW) structure in which quantum well layers and quantum barrier layers are alternately stacked. In the case of a multiple quantum well structure, for example, InGaN / GaN can be used. On the other hand, the first conductive semiconductor layer 203, the second conductive semiconductor layer 201, and the active layer 202 are formed using a known semiconductor layer growth method such as MOCVD, MBE, or HVPE.

  In the present embodiment, the support substrate 102 is a conductive substrate. The support substrate 102 includes, for example, any material of Au, Ni, Al, Cu, W, Si, Se, GaAs, GaN, and SiC. The support substrate 102 may include a plurality of the substances.

  The first terminal portion 103a and the second terminal portion 103b are formed of a metal having good conductivity. First terminal portion 103 a is electrically coupled to first conductive semiconductor layer 203. Second terminal portion 103 b is electrically coupled to second conductive semiconductor layer 201. For example, the first terminal portion 103a and the second terminal portion 103b are connected to the first conductive semiconductor layer 203 and the second conductive semiconductor layer 201, respectively, via a conductor. When the support substrate 102 is a conductive substrate, the first terminal portion 103 a is electrically coupled to the first conductive semiconductor layer 203 through the support substrate 102.

  At least a partial region of the first terminal portion 103a and at least a partial region of the second terminal portion 103b are exposed on the side opposite to the light emitting structure 101 with respect to the support substrate 102. Specifically, when the surface of the support substrate 102 that is in contact with the light emitting structure 101 is the upper surface of the support substrate 102 and the surface of the support substrate 102 that is not in contact with the light emitting structure 101 is the lower surface of the support substrate 102, The portion 103 a and the second terminal portion 103 b are provided on the lower surface side of the support substrate 102. For example, the first terminal portion 103 a is in contact with the lower surface of the support substrate 102. The second terminal portion 103 b is in contact with the insulator 104 that is in contact with the lower surface of the support substrate 102. The first terminal portion 103 a is electrically coupled to the light emitting structure 101 through the support substrate 102.

  The second terminal portion 103 b extends from the second conductive semiconductor layer 201 to the lower surface of the support substrate 102. As an example, the light emitting structure 101 and the support substrate 102 have a structure extending from the surface of the second conductive semiconductor layer 201 in parallel with the side surfaces. The second terminal portion 103 b may be bent in the vicinity of the surface of the second conductive semiconductor layer 201 and in the vicinity of the lower surface of the support substrate 102.

  The insulator 104 insulates between the second terminal portion 103 b and the side surface of the light emitting structure 101. When the support substrate 102 is a conductive substrate, the insulator 104 also insulates between the second terminal portion 103 b and the side surface of the support substrate 102. The insulator 104 is, for example, silicon oxide or silicon nitride.

  When the first conductive semiconductor layer 203 is doped with p-type impurities and the second conductive semiconductor layer 201 is doped with n-type impurities, the area of the first terminal portion 103a is the second terminal portion. It is preferably larger than the area of 103b. In the case where the semiconductor device 100 has such a configuration, the current diffused from the first terminal portion 103a to the light emitting structure 101 can be increased, so that the light extraction efficiency can be increased.

  In the semiconductor device 100 according to the present embodiment, since the first terminal portion 103a and the second terminal portion 103b are arranged on the lower surface side of the support substrate 102, the semiconductor device 100 may be a PCB substrate or the like in a surface mounting process (SMT). Can be easily implemented.

  FIG. 2 is a schematic cross-sectional view of a semiconductor device 100 according to another embodiment. The semiconductor device 100 further includes a light-transmitting polymer layer 105, a light conversion layer 106, and a lens 107 with respect to the semiconductor device 50 shown in FIG.

  A translucent polymer layer 105 may be provided on the light emitting structure 101. The translucent polymer layer 105 includes silicon resin or epoxy resin, and forms a stable adhesive structure with the light conversion layer 106 disposed above the translucent polymer layer 105. The translucent polymer layer 105 covers the upper portion of the second terminal portion 103b, and can form a flat surface before forming the light conversion layer 106. The translucent polymer layer 105 may have a structure that reflects or refracts light at a side surface or an interface with the light conversion layer 106, thereby adjusting the directivity angle of light emitted toward the lens 107.

  The semiconductor device 100 may not include the translucent polymer layer 105. When the semiconductor device 100 does not include the translucent polymer layer 105, the semiconductor device 100 may include the light conversion layer 106 in contact with the light emitting structure 101.

  The light conversion layer 106 is a phosphor having a function of converting the wavelength of light emitted from the light emitting structure 101. The light conversion layer 106 may include a wavelength conversion material that converts to the same wavelength as the quantum dots. In this case, the light conversion layer 106 may have a plate structure (for example, a ceramic converter) made of a wavelength conversion substance, or may have a film structure dispersed in a silicon resin or the like.

  When the wavelength converting substance is a phosphor and blue light is emitted from the light emitting structure 101, the red phosphor is a MAlSiNx: Re (1 ≦ x ≦ 5) nitride phosphor and an MD: Re yellowish field fluorescence. There is a body. Here, M is at least one selected from Ba, Sr, Ca, and Mg, D is at least one selected from S, Se, and Te, and Re is Eu, Y, La, Ce, Nd. , Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, F, Cl, Br, and I.

The green phosphor is M ₂ SiO ₄ : Re silicate phosphor, MA ₂ D ₄ : Re yellow phosphor, β-SiAlON: Re phosphor, MA ' ₂ O ₄ : Re' oxide phosphor Etc. M is at least one element selected from Ba, Sr, Ca, and Mg. A is at least one selected from Ga, Al and In. D is at least one selected from S, Se, and Te.

  A ′ is at least one selected from Sc, Y, Gd, La, Lu, Al, and In. Re is at least one selected from Eu, Y, La, Ce, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, F, Cl, Br, and I. Re ′ is at least one selected from Ce, Nd, Pm, Sm, Tb, Dy, Ho, Er, Tm, Yb, F, Cl, Br, and I.

  A quantum dot is a nanocrystal particle composed of a core and a shell, and the size of the core is in the range of about 100 nm to 200 nm. In addition, quantum dots can be used in fluorescent materials that emit the same various colors as blue (B), yellow (Y), green (G), and red (R) by adjusting the size of the core.

  As an example, the quantum dots are II-VI group compound semiconductors (ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, MgTe, etc.), III-V group compound semiconductors (GaN, GaP, GaAs). , GaSb, InN, InP, InAsInSb, AlAs, AlP, AlSb, AlS, etc.) or group IV semiconductors (Ge, Si, Pb, etc.) or at least two kinds of semiconductors are heterogeneously joined to form a core and shell structure. Is generated by

  In the light conversion layer 106, when quantum dots are generated by forming a shell structure, surface atoms of the shell may be capped with a protective group. By suppressing aggregation of the quantum dots, dispersibility inside the silicon resin or epoxy synthetic resin of the light conversion layer 106 may be improved. In order to improve the phosphor function, an organic ligand (Organic Ligand) using the same substance as oleic acid may be formed in the light conversion layer 106.

  The lens 107 adjusts the directivity angle of light. The lens 107 is provided above the light emitting structure 101. That is, when the semiconductor device 100 includes the light conversion layer 106, the lens 107 is provided in contact with the light conversion layer 106.

  As an example, the lens 107 is not provided above the light emitting structure 101 in a state of being separated by individual chips, but is manufactured by dicing together with the light emitting structure 101 and the support substrate 102 manufactured at the wafer level. . In this case, the lens 107 is provided above the light emitting structure 101 and is formed so as not to cover the side surface of the light emitting structure 101.

  That is, the length of the lens 107 in the horizontal direction is equal to or shorter than the length of the light emitting structure 101 in the horizontal direction. Here, the horizontal direction is a direction perpendicular to the direction in which the light emitting structure 101 and the lens 107 are laminated. When the semiconductor device 100 has the above configuration, the size of the semiconductor device 100 is reduced, and more chips can be generated on the same wafer.

  FIG. 3 is an enlarged view of the periphery of the light emitting structure 101 and the support substrate 102. The semiconductor device 100 may further include a bonding layer 108 provided between the light emitting structure 101 and the support substrate 102. The bonding layer 108 is, for example, a eutectic metal such as AuSn or a conductive polymer such as a conductive epoxy.

  The bonding layer 108 may not be a conductive material and may be a non-conductive bonding material. In this case, the first terminal portion 103 a is connected to the first conductive semiconductor layer 203 through a via hole that penetrates the bonding layer 108.

  The semiconductor device 100 may further include a reflective metal layer between the light emitting structure 101 and the support substrate 102. The reflective metal layer reflects light emitted from the light emitting structure 101 toward the top of the semiconductor device 100, that is, toward the lens 107. Further, the reflective metal layer may be in ohmic contact with the first conductive semiconductor layer 203. The reflective metal layer includes, for example, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, or Au.

  FIG. 4 is an enlarged cross-sectional view showing a lens 107 ′ according to another embodiment. The lens 107 ′ may have a microlens array a formed on the surface. The light extraction efficiency is further improved by forming the microlens array on the surface of the lens 107 ′.

  FIG. 5 to FIG. 10 are cross-sectional views of the semiconductor device 100 in each process schematically showing the method for manufacturing the semiconductor device 100 according to one embodiment of the present invention.

  First, as shown in FIG. 5, the light emitting structure 101 is formed on the growth substrate 109. The growth substrate 109 is used as a base substrate for growing a semiconductor crystal. The growth substrate 109 is, for example, a sapphire substrate. Sapphire is a crystalline substance having a hexagonal-rombo type (Hexa-Rhombo R3c) symmetry. Sapphire has lattice constants in the c-axis and a-axis directions of 13.001 Å and 4.758 そ れ ぞ れ, respectively, and has a C (0001) plane, an A (1120) plane, an R (1102) plane, and the like.

Since the growth of the nitride thin film is relatively easy on the C-plane and the growth of the nitride thin film is stable at a high temperature, the sapphire substrate is suitable as a base substrate for growing a nitride-based semiconductor. Instead of the sapphire substrate, a substrate having SiC, GaN, ZnO, MgAl ₂ O ₄ , MgO, LiAlO _2, LIGaO ₂ or the like may be used as the growth substrate 109.

  When forming the light emitting structure 101, first, the second conductive semiconductor layer 201 is crystal-grown on the growth substrate 109. Subsequently, the active layer 202 is crystal-grown on the second conductive semiconductor layer 201, and the first conductive semiconductor layer 203 is crystal-grown on the active layer 202. The first conductive semiconductor layer 203, the second conductive semiconductor layer 201, and the active layer 202 can be crystal-grown by a method such as MOCVD, MBE, or HVPE.

  Next, as shown in FIG. 6, after the support substrate 102 is attached to the light emitting structure 101 as a support, the growth substrate 109 is separated from the light emitting structure 101. As an example, the growth substrate 109 is separated by laser lift-off that irradiates a region between the growth substrate 109 and the light emitting structure 101 with a laser. The growth substrate 109 may be separated by a method other than laser lift-off. For example, the growth substrate 109 can be separated by chemical lift-off. The support substrate 102 supports the light emitting structure 101 in the step of removing the growth substrate 109.

  When the support substrate 102 includes a conductive material, the support substrate 102 is formed by a method such as a plating method or a bonding method. The support substrate 102 may be a substrate made of a nonconductive material such as alumina, AlN, or undoped Si that is not doped with impurities. In this case, the support substrate 102 may be attached to the light emitting structure 101 with a non-conductive adhesive substance.

  Next, as shown in FIG. 7, the penetrating portion H is formed in the light emitting structure 101 and the support substrate 102. Although FIG. 7 shows an example in which one penetrating portion H is formed, two or more penetrating portions H may be formed according to the number of devices to be manufactured. The penetration part H penetrates the support substrate 102 and reaches the second conductive semiconductor layer 201. The penetration part H may penetrate the second conductive semiconductor layer 201.

  For example, after the light emitting structure 101 and the support substrate 102 are joined, the through portion H penetrating the light emitting structure 101 and the support substrate 102 is formed. After forming the penetration part H in each of the light emitting structure 101 and the support substrate 102, the light emitting structure 101 and the support substrate 102 may be bonded. Thereafter, the insulator 104 is formed on the inner wall of the through-hole H in a process such as vapor deposition. The insulator 104 may be formed not only on the inner wall of the penetrating portion H but also on the lower surface of the support substrate 102.

  Next, as shown in FIG. 8, the first terminal portion 103a and the second terminal portion 103b are formed. The first terminal portion 103a and the second terminal portion 103b are formed by filling the through portion H with a conductive material. A known vapor deposition method or plating method may be used to form the first terminal portion 103a and the second terminal portion 103b.

  In the present embodiment, the first terminal portion 103 a is formed on the lower surface of the support substrate 102, and is electrically coupled to the light emitting structure 101 via the conductive support substrate 102. The second terminal portion 103 b extends from the surface opposite to the surface in contact with the support substrate 102 of the light emitting structure 101 to the lower surface of the support substrate 102 through the penetration portion H. The second terminal portion 103 b is in contact with the insulator 104 that covers a partial region of the lower surface of the support substrate 102. Subsequently, as illustrated in FIG. 9, a light-transmitting polymer layer 105 and a light conversion layer 106 are formed on the light emitting structure 101.

  Next, as shown in FIG. 10, a semiconductor device array is formed by providing a lens 107 above the light conversion layer 106. As an example, the lens 107 is formed as a lens having a structure in which a plurality of lenses are integrally formed without being separated in advance in units of chips, that is, a wafer level lens. After manufacturing such a wafer level lens, the wafer level lens may be attached to the top of the light emitting structure 101. After attaching the wafer level lens, the individual lens may be shaped. As an example, the wafer level lens is provided so that at least one of the boundary lines of the plurality of lenses included in the wafer level lens overlaps the through portion H.

  Subsequently, the structure to which the lens 107 is attached is diced in the direction of the arrow in FIG. 10 so as to be separated into individual semiconductor device units. That is, the support substrate 102, the light emitting structure 101, the translucent polymer layer 105, the light conversion layer 106, and the wafer level lens along a line passing through the central portion of the first terminal portion 103a or the central portion of the second terminal portion 103b. Are cut in the stacking direction. When cutting the second terminal portion 103b, the through portion H filled with the conductive material is cut. By dicing, three semiconductor devices 100 can be obtained in the embodiment shown in FIG.

  The semiconductor device array in a state where the wafer level lens before being diced is attached includes the second terminal portion 103b for every two individual lenses. The semiconductor device includes a first terminal portion 103a on the surface of the support substrate 102 between the second terminal portions 103b. The second terminal portion 103b has a symmetrical shape with respect to a surface obtained by extending the boundary position of the individual lens. The first terminal portion 103a has the same length on the left and right sides of the surface where the boundary position of the individual lens is extended. Since the semiconductor device before dicing has this configuration, the plurality of semiconductor devices 100 obtained by dicing have the same shape.

  After manufacturing a semiconductor device array having a wafer level lens having a plurality of lenses as in this embodiment, the semiconductor layer is manufactured by dicing each size corresponding to each lens. Compared with the manufacturing method in which the lens is attached after dicing, the manufacturing efficiency is improved and the manufacturing cost is reduced.

  FIG. 11 is a schematic cross-sectional view of a semiconductor device 200 according to another embodiment. In the present embodiment, the semiconductor device 200 includes an electrically insulating support substrate 102 ′ instead of the support substrate 102 in the semiconductor device 100 shown in FIG. The electrically insulating support substrate 102 ′ is made of a material such as alumina, AlN, or undoped Si, for example.

  The semiconductor device 200 has conductive vias V that penetrate the electrically insulating support substrate 102 '. The first terminal portion 103a is connected to the light emitting structure 101 through the conductive via V. In the semiconductor device 200, the second terminal portion 103b is in contact with the surface and the side opposite to the surface in contact with the light emitting structure 101 of the electrically insulating support substrate 102 ′. Further, the insulator 104 is not formed in the region between the support substrate 102 ′ and the second terminal portion 103b. That is, the semiconductor device 200 includes the insulator 104 formed on the light emitting structure 101 side with respect to the interface between the electrically insulating support substrate 102 ′ and the light emitting structure 101.

  In the embodiment shown in FIG. 11, the first terminal portion 103a is connected to the light emitting structure 101 through the conductive via V, but the first terminal portion 103a has the same shape as the second terminal portion 103b. By having it, the light emitting structure 101 may be connected without passing through the conductive via V. That is, the first terminal portion 103a extends from the first conductive semiconductor layer 203 along the side surfaces of the light emitting structure 101 and the support substrate 102 ′ to the side opposite to the light emitting structure 101 with respect to the support substrate 102 ′. It may be.

  In the embodiment shown in FIGS. 1 and 11, the first terminal portion 103 a is connected to the lower surface of the light emitting structure 101, and the second terminal portion 103 b is connected to the upper surface of the light emitting structure 101. The semiconductor device may have a configuration in which each of the first terminal portion 103 a and the second terminal portion 103 b is connected to the same surface of the lower surface or the upper surface of the light emitting structure 101.

  For example, when a partial region of the first conductive semiconductor layer 203 is exposed on the upper surface of the light emitting structure 101, the first terminal portion 103a is the same as the second terminal portion 103b in FIGS. Further, the light emitting structure 101 may be extended from the upper surface along the side surfaces of the light emitting structure 101 and the support substrate 102 to the lower surface of the support substrate 102. In addition, when a part of the second conductive semiconductor layer 201 is exposed on the lower surface of the light emitting structure 101, the second terminal portion 103b is supported in the same manner as the first terminal portion 103a in FIG. It may be formed in contact with the lower surface of the substrate 102. Similarly to the first terminal portion 103a in FIG. 11, the second terminal portion 103b may be formed in contact with the lower surface of the support substrate 102 ′ and then connected to the light emitting structure 101 through the conductive via V. .

  FIG. 12 is a cross-sectional view schematically showing a semiconductor device 300 according to another embodiment. As illustrated in FIG. 12, the semiconductor device 300 includes a light emitting structure 301, a support substrate 302, a first terminal portion 303a, a second terminal portion 303b, a light conversion layer 306, a lens 307, and a bonding layer 308. The light emitting structure 301 includes a first conductive semiconductor layer 403, an active layer 402, and a second conductive semiconductor layer 401. The semiconductor device 300 may further include translucent polysilicon provided between the light emitting structure 301 and the light conversion layer 306.

  The bonding layer 308 is provided between the light emitting structure 301 and the support substrate 302 or between the first terminal portion 303 a and the support substrate 302. The bonding layer 308 is made of an electrically insulating material. As an electrically insulating material that can be used as the bonding layer 308, a silicon resin or an epoxy resin can be exemplified. By using this material, the manufacturing cost can be reduced compared to the case of using a conductive bonding material such as AuSn.

  The support substrate 302 is an electrically insulating substrate. The first terminal portion 303 a passes through the support substrate 302 and the bonding layer 308 and is connected to the first conductive semiconductor layer 403 of the light emitting structure 301. The lower surface of the first terminal portion 303a is exposed to the outside. The first terminal portion 303 a may be connected to the first conductive semiconductor layer 403 through a conductive via that penetrates the support substrate 302 and the bonding layer 308. For example, the first terminal portion 303 a is in contact with the entire surface of the bonding layer 308 and the first conductive semiconductor layer 403 between the bonding layer 308 and the first conductive semiconductor layer 403, and is in contact with the first conductive semiconductor layer 403. And ohmic contact. The first terminal portion 303a may include a reflective metal layer that reflects light emitted from the active layer 402.

  The second terminal portion 303 b passes through the support substrate 302, the bonding layer 308, the first terminal portion 303 a, the first conductive semiconductor layer 403, and the active layer 402 and is connected to the second conductive semiconductor layer 401. The lower surface of the second terminal portion 303b is exposed to the outside. The second terminal portion 303b is connected to the second conductive semiconductor layer 401 through, for example, a through via. The semiconductor device 300 includes an insulator 304 between the second terminal portion 303b and the active layer 402, the first conductive semiconductor layer 403, and the first terminal portion 303a, so that the second terminal portion 303b and the bonding layer 308 are provided. A short circuit between the first conductive semiconductor layer 403 and the active layer 402 can be prevented.

  Since the second terminal portion 303b has the structure shown in FIG. 12, there is no portion on the surface of the light emitting structure 301 that obstructs the progress of light, so that the light extraction efficiency can be improved. In addition, since the region where the second terminal portion 303 b is connected to the second conductive semiconductor layer 401 is inside the second conductive semiconductor layer 401, it is advantageous in terms of current distribution. The second terminal portion 303b may be connected to the second conductive semiconductor layer 401 through two or more conductive vias in order to further improve the current distribution.

  In the embodiment shown in FIG. 12, one conductive via passes through the support substrate 302, the bonding layer 308, the first terminal portion 303 a, the first conductive semiconductor layer 403, and the active layer 402. However, a plurality of spatially separated conductive vias that penetrate through the support substrate 302, the bonding layer 308, the first terminal portion 303a, the first conductive semiconductor layer 403, and the active layer 402 are electrically coupled. It may be.

  FIG. 13 is a schematic cross-sectional view of a semiconductor device 400 according to another embodiment. Unlike the semiconductor device 300 shown in FIG. 12, the semiconductor device 400 includes a conductive support substrate 302 ′. The conductive support substrate 302 ′ is made of any of various materials such as Au, Ni, Al, Cu, W, Si, Se, GaAs, GaN, and SiC. The conductive support substrate 302 ′ may be a substrate made of a material mixed with the material.

  The semiconductor device 400 includes an insulator 304a between the support substrate 302 ′ and the first terminal portion 303a in order to insulate the support substrate 302 ′ from the first terminal portion 303a and the second terminal portion 303b. An insulator 304b is provided between 302 ′ and the second terminal portion 303b. The insulator 304b extends along the side surface of the second terminal portion 303b until it reaches the second conductive semiconductor layer 401, and the second terminal portion 303b, the bonding layer 308, the first terminal portion 303a, and the first conductive semiconductor layer. 403 and the active layer 402 are insulated.

  FIG. 14 is a schematic cross-sectional view of a semiconductor device 500 according to another embodiment. The semiconductor device 500 has a conductive support substrate 302 ′. The first terminal portion 303a is in contact with the surface opposite to the surface in contact with the active layer 402 of the first conductive semiconductor layer 403. The first terminal portion 303a passes through the electrically insulating bonding layer 308 and is connected to the support substrate 302 ′. In the semiconductor device 500, the first terminal portion 303a is not exposed to the outside, and the support substrate 302 ′ functions as a terminal portion.

  FIG. 15 is a schematic cross-sectional view of a semiconductor device 600 according to another embodiment. The semiconductor device 300, the semiconductor device 400, and the semiconductor device 500 illustrated in FIGS. 12, 13, and 14 have the electrically insulating bonding layer 308, whereas the semiconductor device 600 includes the conductive bonding layer 308. Have '. The bonding layer 308 ′ in the semiconductor device 600 is, for example, a eutectic metal layer such as AuSn or a conductive epoxy.

  When the bonding layer 308 ′ is conductive, the semiconductor device 600 further includes an insulator 304c. The insulator 304c is formed between the bonding layer 308 ′ and the first terminal portion 303a. The insulator 304c is connected to the insulator 304a and the insulator 304b, and the insulator 304a, the insulator 304b, and the insulator 304c are integrated with each other to connect the first terminal portion 303a and the second terminal portion 303b to each other. Insulate.

  As described above, in the semiconductor device according to this embodiment, any of an electrically insulating material and a conductive material can be used as the support substrate and the bonding layer. Therefore, the electrical coupling structure and the insulating structure inside the semiconductor device can be modified into various forms.

  The semiconductor device according to the embodiment of FIGS. 12 to 15 can be manufactured by modifying the manufacturing method described with reference to FIGS. That is, instead of the through portion H penetrating the light emitting structure 101 shown in FIG. 7, an opening reaching the second conductive semiconductor layer 401 through the first conductive semiconductor layer 403 and the active layer 402 is formed. By filling the opening with a conductive material, a conductive via that electrically couples the second terminal portion 303b and the second conductive semiconductor layer 401 can be formed.

  In the embodiment shown in FIGS. 5 to 10, since the second terminal portion 103b is formed on the side surfaces of the light emitting structure 101 and the support substrate 102, the second terminal portion 103b is cut by dicing. On the other hand, in the embodiment of FIGS. 12 to 15, the first terminal portion 303a and the second terminal portion 303b are not cut by dicing.

  FIG. 16 is a schematic cross-sectional view of a lighting apparatus 700 according to another embodiment of the present invention. The lighting device 700 includes the semiconductor device 100, a bulb 710, a terminal 720, a wiring 730, and a substrate 740. The substrate 740 has a plurality of through holes 750 that connect the plurality of semiconductor devices 100 and the plurality of terminals 720.

  The lighting device 700 supplies power obtained from a commercial power source to the semiconductor device 100 via the wiring 730, the terminal 720, and the through hole 750. The semiconductor device 100 emits light toward the bulb 710 in response to power supply.

  The substrate 740 may include a circuit for driving the semiconductor device 100 such as a resistor for adjusting a current flowing through the semiconductor device 100 on the same surface as the surface on which the semiconductor device 100 is provided. Since the semiconductor device 100 has a plurality of electrodes exposed on the lower surface, the circuit for driving the semiconductor device 100 and the semiconductor device 100 can be easily mounted on the same surface of the printed board.

  FIG. 17 shows a configuration example of the backlight 800. The backlight 800 includes a device array 820 in which a plurality of semiconductor devices 100 are arranged one-dimensionally or two-dimensionally, and a light guide plate 810. The backlight 800 may further include an optical sheet such as a diffusion sheet and a lens sheet provided at a position facing the light exit surface of the light guide plate 810.

  The device array 820 may be provided to face each long side of the light guide plate 810. Each semiconductor device 100 emits light into the light guide plate 810 from the side surface of the light guide plate 810. The light guide plate 810 emits incident light from a predetermined light exit surface. Further, the device array 820 may be provided so as to face the surface opposite to the light exit surface of the light guide plate 810. That is, the backlight 800 may be a direct type. The backlight can be used for a liquid crystal monitor such as a television, a liquid crystal screen of a mobile phone, and the like.

  Note that the semiconductor device 50 and the semiconductor device 100 described with reference to FIGS. 1 and 2 can be used for various applications. For example, the semiconductor device 100 can also be used as a light source for a headlight of a motorcycle or an automobile. In this case, the headlight includes one or a plurality of semiconductor devices 100 and a lens that radiates light emitted from the semiconductor devices 100 to the outside of the vehicle.

  Moreover, the semiconductor device 100 can also be used as a light source of a fluorescent lamp. In this case, the fluorescent lamp includes a plurality of semiconductor devices 100 arranged one-dimensionally, and a tube that stores the plurality of semiconductor devices 100 and irradiates the emitted light of the semiconductor devices 100 to the outside.

  The semiconductor device 100 can also be used as a pixel of an information display device. In this case, the information display apparatus includes a plurality of semiconductor devices 100 arranged in a two-dimensional manner and a drive circuit that drives each semiconductor device 100. The plurality of semiconductor devices 100 may include a plurality of types of devices that respectively emit green light, blue light, or red light.

  Moreover, the semiconductor device 100 can also be used as a light source of a traffic light. The traffic light has at least two types of semiconductor devices 100 that emit different colors, and a drive circuit that drives each semiconductor device 100. The traffic light may include a plurality of semiconductor devices 100 for each color.

  Moreover, the semiconductor device 100 can also be used as a light source of an indicator lamp that indicates an operating state of an electric device. The indicator lamp is an indicator lamp that indicates, for example, the power state of a television or a notebook computer, and includes a semiconductor device 100 and a drive circuit that drives the semiconductor device 100.

  The technical scope of the present invention is not limited to the embodiments described above and the accompanying drawings, but is defined by the appended claims. Accordingly, various forms of substitution, modification, and alteration are possible by those having ordinary knowledge in the technical field of the present invention without departing from the technical idea of the present invention described in the claims. These are also within the scope of the present invention.

50 Semiconductor Device, 100 Semiconductor Device, 101 Light-Emitting Structure, 102 Support Substrate, 103a First Terminal Part, 103b Second Terminal Part, 104 Insulator, 105 Translucent Polymer Layer, 106 Light Conversion Layer, 107 Lens, 108 Bonding Layer, 109 growth substrate, 200 semiconductor device, 201 second conductive semiconductor layer, 202 active layer, 203 first conductive semiconductor layer, 300 semiconductor device, 301 light emitting structure, 302 support substrate, 303a first terminal portion, 303b Second terminal portion, 304 insulator, 306 light conversion layer, 307 lens, 308 bonding layer, 308 ′ bonding layer, 400 semiconductor device, 401 second conductive semiconductor layer, 402 active layer, 403 first conductive semiconductor layer, 500 semiconductor devices, 600 semiconductor devices , 700 illumination device, 710 valve, 720 terminal, 730 wiring, 740 substrate, 750 through hole, 800 a backlight, 810 light guide plate 820 device array

Claims (7)

A substrate,
A light emitting structure having a structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are stacked on the substrate;
A lens disposed on the light emitting structure;
A first terminal portion electrically connected to the first conductive semiconductor layer and exposed to the outside through the substrate;
A second terminal part electrically connected to the second conductive semiconductor layer and exposed to the outside through the substrate ;
An electrical insulating bonding layer disposed between the light emitting structure and the substrate ;
The second terminal portion includes a conductive via that penetrates the first terminal portion, the first conductive semiconductor layer, and the active layer and is connected to the second conductive semiconductor layer.
The light-emitting device, wherein the lens is disposed so as not to cover a side surface of the light-emitting structure. The light emitting device according to claim 1 , wherein the substrate is an electrically insulating substrate. The light emitting device according to claim 1 , wherein the substrate is an electrically conductive substrate. The light emitting device according to any one of claims 1 to 3 , further comprising a light-transmitting polymer layer disposed between the lens and the light emitting structure. Is disposed between the lens light emitting structure, in any one of claims 1 to 4, further comprising a light conversion layer for converting the wavelength of light emitted from the light emitting structure The light-emitting device described. The lens is light-emitting device according to any one of claims 1 to 5, characterized in that it comprises a microlens array formed on the surface. A substrate,
A light emitting structure having a structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are stacked on the substrate;
A first terminal portion electrically connected to the first conductive semiconductor layer and exposed to the outside through the substrate;
A second terminal part electrically connected to the second conductive semiconductor layer and penetrating the substrate and exposed to the outside;
The second terminal portion includes a conductive via that penetrates the first terminal portion, the first conductive semiconductor layer, and the active layer and is connected to the second conductive semiconductor layer.
A region of the first terminal portion penetrating the substrate is made of the same material as the substrate and is formed integrally with the substrate.

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