JP5843909B2 - 電子銃装置、ウェーハ画像化システム、及び電子銃装置のエクストラクタ電極の少なくとも１つの表面をクリーニングする方法 - Google Patents

電子銃装置、ウェーハ画像化システム、及び電子銃装置のエクストラクタ電極の少なくとも１つの表面をクリーニングする方法 Download PDF

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JP5843909B2
JP5843909B2 JP2014049959A JP2014049959A JP5843909B2 JP 5843909 B2 JP5843909 B2 JP 5843909B2 JP 2014049959 A JP2014049959 A JP 2014049959A JP 2014049959 A JP2014049959 A JP 2014049959A JP 5843909 B2 JP5843909 B2 JP 5843909B2
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electrode
emitter
extractor
respect
suppressor
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JP2014183046A (ja
JP2014183046A5 (enExample
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アダメック パヴェル
アダメック パヴェル
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アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー
アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/063—Geometrical arrangement of electrodes for beam-forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/027—Construction of the gun or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
JP2014049959A 2013-03-15 2014-03-13 電子銃装置、ウェーハ画像化システム、及び電子銃装置のエクストラクタ電極の少なくとも１つの表面をクリーニングする方法 Active JP5843909B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13159528.2 2013-03-15
EP20130159528 EP2779204A1 (en) 2013-03-15 2013-03-15 Electron gun arrangement

Publications (3)

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JP2014183046A JP2014183046A (ja) 2014-09-29
JP2014183046A5 JP2014183046A5 (enExample) 2015-07-02
JP5843909B2 true JP5843909B2 (ja) 2016-01-13

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JP2014049959A Active JP5843909B2 (ja) 2013-03-15 2014-03-13 電子銃装置、ウェーハ画像化システム、及び電子銃装置のエクストラクタ電極の少なくとも１つの表面をクリーニングする方法

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Country Link
US (1) US8957390B2 (enExample)
EP (1) EP2779204A1 (enExample)
JP (1) JP5843909B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2779201A1 (en) * 2013-03-15 2014-09-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High brightness electron gun, system using the same, and method of operating the same
JP6283423B2 (ja) 2014-10-20 2018-02-21 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP6439620B2 (ja) * 2015-07-28 2018-12-19 株式会社ニューフレアテクノロジー 電子源のクリーニング方法及び電子ビーム描画装置
US10096447B1 (en) * 2017-08-02 2018-10-09 Kla-Tencor Corporation Electron beam apparatus with high resolutions
JP6943701B2 (ja) * 2017-09-15 2021-10-06 日本電子株式会社 冷陰極電界放出型電子銃の調整方法
EP3518268B1 (en) * 2018-01-30 2024-09-25 IMS Nanofabrication GmbH Charged-particle source and method for cleaning a charged-particle source using back-sputtering
JP7132254B2 (ja) * 2018-02-07 2022-09-06 株式会社日立ハイテク クリーニング装置
US11037753B2 (en) * 2018-07-03 2021-06-15 Kla Corporation Magnetically microfocused electron emission source
KR102640728B1 (ko) * 2019-04-18 2024-02-27 주식회사 히타치하이테크 전자원 및 하전 입자선 장치
US10861666B1 (en) 2020-01-30 2020-12-08 ICT Integrated Circuit Testing Gesellschaft für Halbletterprüftechnik mbH Method of operating a charged particle gun, charged particle gun, and charged particle beam device
US11830699B2 (en) * 2021-07-06 2023-11-28 Kla Corporation Cold-field-emitter electron gun with self-cleaning extractor using reversed e-beam current
JP7730916B2 (ja) * 2021-10-19 2025-08-28 株式会社日立ハイテク 荷電粒子線装置
US20230197399A1 (en) * 2021-12-21 2023-06-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron microscope, electron source for electron microscope, and methods of operating an electron microscope
EP4553885A1 (en) * 2023-11-09 2025-05-14 ASML Netherlands B.V. Source, assessment apparatus, method of cleaning a charged particle source, method of cleaning a component of an assessment apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63259948A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd 電界放出形電子発生装置
EP1207545A3 (en) * 2000-11-17 2007-05-23 Denki Kagaku Kogyo Kabushiki Kaisha Method for determining and setting an operational condition of a thermal field electron emitter
EP1455380B1 (en) * 2003-03-03 2007-04-18 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh Charged particle beam device with cleaning unit and method of operation thereof
WO2010070837A1 (ja) * 2008-12-16 2010-06-24 株式会社日立ハイテクノロジーズ 電子線装置およびそれを用いた電子線応用装置
EP2312609B1 (en) * 2009-10-13 2013-08-28 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Method and apparatus of pretreatment of an electron gun chamber
EP2365511B1 (en) * 2010-03-10 2013-05-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Feedback loop for emitter flash cleaning
EP2385542B1 (en) * 2010-05-07 2013-01-02 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron beam device with dispersion compensation, and method of operating same
US8736170B1 (en) * 2011-02-22 2014-05-27 Fei Company Stable cold field emission electron source

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Publication number Publication date
JP2014183046A (ja) 2014-09-29
EP2779204A1 (en) 2014-09-17
US20140264019A1 (en) 2014-09-18
US8957390B2 (en) 2015-02-17

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