JP5841410B2 - Thermoelectric portable device - Google Patents

Description

  The present invention relates to a thermoelectric power generation type portable device that performs temperature compensation of a clock crystal oscillator mounted on a wristwatch or the like.

  Conventionally, a thermoelectric generator is used as a power source, and the thermoelectric generator is installed between the back cover and the heat dissipation ring inside the main body, so that the body temperature is transmitted from the human arm through the back cover, and the heat generation side temperature and heat dissipation. A thermoelectric wristwatch that obtains a generated voltage based on a temperature difference from the temperature on the side is known (see, for example, Patent Document 1). A crystal oscillation circuit using a tuning fork type crystal resonator is mounted on a device having a timekeeping function such as a wristwatch. Since the timing accuracy is greatly influenced by the temperature characteristics of the timing signal output from the crystal oscillation circuit, in recent years, temperature compensation technology for the timing crystal oscillator has attracted attention.

  FIG. 11 is a block diagram for explaining temperature compensation of a conventional clock crystal oscillator. In FIG. 11, a Colpitts-type crystal oscillation circuit 1105 is configured by a crystal resonator 1101, an inverting amplifier 1102, a gate capacitor 1103, and a drain capacitor 1104. This crystal unit 1101 is a tuning fork type crystal unit having a frequency of 32.768 KHz. The signal output from the crystal oscillation circuit 1105 is divided by a frequency dividing circuit 1106 and converted into a pulse signal having a period of 1 second. Here, the natural frequency of the crystal unit 1101 has a property of changing with respect to the ambient temperature, and the period of the pulse signal is exactly 1 second only by combining the crystal oscillation circuit 1105 and the normal frequency divider circuit. However, the frequency temperature characteristic of the natural frequency of the crystal unit 1101 is reflected, and the temperature depends on the temperature. In order to solve this problem, based on the temperature information measured by the temperature sensor 1108 and information recorded in advance in the memory 1109, the frequency divider 1106 sets the frequency division ratio to the temperature change. It has a variable function. That is, the frequency division ratio of the frequency dividing circuit 1106 is digitally changed with respect to the temperature to improve the temperature stability of the period of the pulse signal 1107.

FIG. 12 is a characteristic diagram for explaining the temperature characteristics of a pulse signal using the conventional temperature compensation explained in FIG. The horizontal axis is temperature, and the vertical axis is the rate of change. A characteristic curve 1201 is a temperature change curve of the oscillation frequency output from the oscillation circuit 1105 in FIG. 11, and is convexly parabolic. This parabolic temperature characteristic is a unique temperature characteristic determined by the physical property value of the tuning fork type crystal resonator, and is a temperature change curve of a series resonance frequency F _r described later. The vertex temperature Tp of this characteristic curve 1201 is normally set to 20 ° C. However, this apex temperature Tp can be changed freely by changing the cut angle of the crystal resonator. On the other hand, the characteristic curve 1202 is a temperature change curve after the temperature compensation of the period of the pulse signal 1107 described in FIG. 11, and the temperature change is suppressed as compared with the temperature characteristic of the characteristic curve 1201.

Japanese Patent No. 3054933

  However, in the temperature compensation of the above-described prior art crystal oscillator, particularly in a wristwatch, excessive power is required to drive the temperature sensor 1108, the memory 1109, and the frequency dividing circuit 1106, so that the battery life is short. There was a problem of becoming. Furthermore, electrical noise generated when changing the frequency division ratio is also a problem.

  The present invention has been made in view of the above circumstances, and it is possible to reduce power consumption, and furthermore, a time-consuming crystal oscillation circuit with less electrical noise, and a thermoelectric power generation portable device that performs a temperature compensation method for a watch crystal oscillation circuit The purpose is to provide.

The first feature of the thermoelectric power generation portable device of the present invention for solving the above-mentioned problems is a crystal oscillation circuit having a crystal resonator, a thermoelectric generator that generates electric power based on a heat source and a temperature difference, and the thermoelectric generator A control unit that generates a control voltage from the power generation voltage output from the controller, voltage-controls a load capacitance value of the crystal oscillation circuit based on the value of the control voltage, and controls a temperature characteristic of an oscillation frequency of the crystal oscillation circuit; The gist is to have.
According to this feature, the temperature characteristic of the oscillation frequency of the crystal oscillation circuit can be controlled without driving the temperature sensor and the memory, and the power consumption can be reduced.

According to a second feature of the fuel cell of the present invention, in the thermoelectric power generation portable device according to the first feature, the crystal resonator is a tuning fork crystal resonator, and the oscillation frequency of the tuning fork crystal resonator is the same. The vertex temperature in the temperature characteristic is substantially the same as the temperature of the heat source, and the temperature dependency of the control voltage is set to a V-shaped characteristic that is a downwardly convex V shape with the vertex temperature as a symmetry point. The gist of what is being done.
According to such a feature, it is possible to reduce the frequency fluctuation caused by the temperature characteristics with the vertex temperature of the tuning fork type crystal resonator as the symmetry point.

The third feature of the fuel cell according to the present invention is that the thermoelectric power generation portable device of the second feature includes a quadratic curve component having a positive coefficient with respect to the V-shaped characteristic. To do.
According to such a feature, it is possible to control the quadratic curve component of the temperature characteristic with the vertex temperature of the tuning fork type crystal resonator as a symmetric point, and the frequency fluctuation can be extremely reduced.

According to a fourth aspect of the fuel cell of the present invention, in the thermoelectric power generation portable device according to the second or third aspect, the control unit boosts and stores the generated voltage output from the thermoelectric generator. The gist of the invention is to drive the crystal oscillation circuit using the boosted voltage or the stored generated power voltage.
According to such a feature, the power necessary for driving the crystal oscillation circuit can be driven by the voltage output from the thermoelectric generator, so that the power consumption can be further reduced.

  As in the present invention, a thermoelectric generator that generates electricity based on a temperature difference between a heat source side temperature and a heat radiating side temperature, and a quartz crystal mounted on a quartz resonator having a parabolic frequency temperature characteristic from a generated voltage output from the power generation member If a method for generating a control voltage for controlling the load capacitance value of the oscillation circuit and improving the temperature characteristic of the oscillation frequency of the crystal oscillation circuit by the control voltage (temperature compensation method) is adopted, FIG. Compared with the conventional temperature compensation method described above, since the electric power necessary for the temperature compensation is supplied from the thermoelectric generator, an extremely great effect that a significant reduction in power consumption can be realized.

The block diagram explaining the 1st Example of the temperature compensation method of the bioelectric portable apparatus with a thermoelectric generation type timekeeping function which concerns on this invention. The block diagram explaining the 2nd Example of the temperature compensation method of the bioelectric portable apparatus with a thermoelectric generation type timekeeping function which concerns on this invention. FIG. 6 is an equivalent circuit diagram of the crystal unit 1101. Characteristic curves illustrating load capacitance dependence of the oscillation frequency F ₀ of the crystal oscillation circuit. The characteristic view which shows the V-shaped applied voltage characteristic of a variable capacity diode. First characteristic diagram for explaining the temperature change in the load capacitance C _L constituted by the temperature change and variable capacitance diode application voltage V _R applied to the variable capacitance diode according to the present invention. The 1st characteristic view explaining the temperature characteristic of the oscillation frequency concerning the present invention. Second characteristic diagram for explaining the temperature change in the load capacitance C _L constituted by a temperature change and a variable capacitance diode application voltage V _R applied to the variable capacitance diode according to the present invention. The 2nd characteristic view explaining the temperature characteristic of the oscillation frequency concerning the present invention. The block diagram for demonstrating the V-shaped applied voltage generation mechanism using the thermoelectric generation element which concerns on this invention. The block diagram explaining the temperature compensation of the conventional crystal oscillator for timekeeping. The characteristic view explaining the temperature characteristic of the pulse signal using the conventional temperature compensation.

(Embodiment 1)
Based on FIG. 1 and FIGS. 11-12, the Example of the thermoelectric generation type portable apparatus in Embodiment 1 of this invention is described.

First, the relationship between the load capacitance and the oscillation frequency in the crystal oscillation circuit will be described below. The load capacitance C _L in the crystal oscillation circuit 1105 illustrated in FIG. 11 is substantially determined by the gate capacitance 1103 and the drain capacitance 1104. If the values of the gate capacitance 1103 and the drain capacitance 1104 are Cg and Cd, respectively, as shown in FIG. 11, the load capacitance of the crystal oscillation circuit 1105 can be defined as a series combined capacitance of both capacitances. That is, the load capacitance C _L of the crystal oscillation circuit 1105 is

Can be written.
FIG. 3 is an equivalent circuit diagram of the crystal unit 1101 shown in FIG. 11, and the crystal unit 1101 is equivalently configured by an equivalent inductance 301, an equivalent capacitor 302, an equivalent resistor 303, and a parallel capacitor 304. Here, the equivalent inductance 301, the equivalent capacitance 302, respectively an equivalent resistance 303 and a parallel capacitor 304, L _m as described FIG. 3, C _m, when the R _m and C _0, the series resonant frequency of the crystal oscillator 1101 F _r Is

It becomes. Using this series resonance frequency F _r , the load capacitance C _L given by [Equation 1] and the equivalent element shown in FIG. 3, the oscillation frequency F ₀ excited by the crystal oscillation circuit 1105 is

It becomes.
FIG. 4 is a characteristic curve diagram showing the load capacitance dependence of the oscillation frequency F ₀ of the crystal oscillation circuit 1105 based on FIGS. 11 and 12, where the horizontal axis is the load capacitance C _L and the vertical axis is the oscillation frequency. The rate of change of F ₀ is ΔF ₀ / F _r . The rate of change ΔF ₀ / F _r of this oscillation frequency F ₀ is based on [Equation 3].

This is illustrated by a characteristic curve 401 shown in FIG.

The frequency temperature characteristic of the oscillation frequency F ₀ of the crystal oscillation circuit 1105 is obtained from [Equation 3] of the temperature characteristic of the series resonance frequency F _r of the crystal oscillator 1101, the equivalent capacitance C _m , the parallel capacitance C _0, and the load capacitance C _L. It turns out that it is determined by the temperature characteristics. Actually, the temperature characteristics of the equivalent capacitance C _m and the parallel capacitance C ₀ are extremely insignificant, and the frequency temperature characteristics of the oscillation frequency F ₀ are the temperature characteristics of the series resonance frequency F _{r and} the temperature characteristics of the load capacitance C _L. Determined by Therefore, the frequency variation with respect to the temperature change of the series resonance frequency F _r can be compensated by the temperature change amount of the load capacitance C _L , and the frequency temperature characteristic of the oscillation frequency F ₀ can be improved.

FIG. 5 is a characteristic diagram showing the applied voltage characteristics of the variable capacitance diode, where the horizontal axis represents the applied voltage V _R , and the vertical axis represents the capacitance value C _v . A characteristic curve 501 is a characteristic curve indicating the applied voltage of the capacitance value. Capacitance C _v of the variable capacitance diode as indicated by the characteristic curve 501 shows the characteristic that decreases with increasing applied voltage V _R. Therefore, in a crystal oscillation circuit configured such that all or part of the capacitive elements on the gate side and the drain side have variable capacitance diodes, the temperature change is converted into a voltage change, and the voltage change is changed to the load capacitance change. By conversion, the temperature characteristics of the oscillation frequency can be improved, that is, temperature compensation can be realized.

Hereinafter, the temperature compensation of the crystal oscillation circuit using the tuning fork type crystal resonator will be mainly described. 6 is a first characteristic diagram for explaining the temperature change in the load capacitance C _L constituted by the temperature change and variable capacitance diode application voltage V _R applied to the variable capacitance diode according to the present invention. In this figure, the horizontal axis represents temperature, the vertical first axis represents the applied voltage V _R , and the vertical second axis represents the load capacitance value C _L. A V-shaped applied voltage characteristic curve 601 is a characteristic curve showing the temperature change of the applied voltage V _R , and is a convex V-shaped characteristic curve with the reference temperature T _S as the center of symmetry. In conjunction with this characteristic curve 601, a characteristic curve showing the temperature dependence of the load capacitance constituted by the variable capacitance diode is a load capacitance characteristic curve 602 shown in FIG. 6, which has a reference temperature T _S as the center of symmetry. It has a convex V-shaped characteristic curve. This load capacity characteristic curve 602 is set so as to compensate for the frequency temperature characteristic of the oscillation frequency F ₀ via [Equation 3]. It goes without saying that this setting can be easily made by selecting the ratings of the variable capacitance diode used and the capacitive element to be combined in order to correspond to the V-shaped applied voltage characteristic curve 601, and is merely a design matter.

FIG. 7 is a first characteristic diagram for explaining the temperature characteristics of the oscillation frequency when the load capacity characteristic curve 602 shown in FIG. 6 is adopted for the load capacity of the crystal oscillation circuit according to the present invention. Is the frequency change rate, and the horizontal axis is the temperature. The temperature characteristic of the oscillation frequency when there is no temperature dependency of the load capacitance C _L is the pre-compensation temperature special curve 701 shown in this figure, which is substantially equal to the temperature change curve of the series resonance frequency F _r of the tuning fork crystal resonator. It is a temperature change curve. When the peak temperature of the pre-compensation temperature special curve 701 is adjusted to the same temperature as the reference temperature T _S shown in FIG. 6 by adjusting the cut angle, and the load capacity characteristic curve 602 shown in FIG. 6 is adopted for the load capacity. The temperature characteristic of the oscillation frequency is a post-compensation temperature characteristic curve 702 shown in the figure. As can be seen from this post-compensation temperature characteristic curve 702, it is found that by giving the load capacitance _CL a temperature characteristic, a frequency temperature characteristic stable with respect to temperature can be obtained.

Figure 8 is a second characteristic diagram for explaining the temperature change in the load capacitance C _L constituted by the temperature change and variable capacitance diode application voltage V _R applied to the variable capacitance diode according to the present invention. In this figure, the horizontal axis represents temperature, the vertical first axis represents the applied voltage V _R , and the vertical second axis represents the load capacitance value C _L. A characteristic curve showing the temperature variation of the V-shaped applied voltage characteristic curve 801 is the applied voltage V _R, convex upward with a symmetry around a reference temperature T _S in the same manner as V-shaped applied voltage characteristic curve 601 of FIG. 6, wherein This is a V-shaped characteristic curve. However, the V-shaped applied voltage characteristic curve 801 is different from the V-shaped applied voltage characteristic curve 601 shown in FIG. 6 in that it includes a downwardly convex quadratic curve component. In conjunction with the V-shaped applied voltage characteristic curve 801, the characteristic curve showing the temperature dependency of the load capacity is composed of a variable capacitance diode is a load capacitance characteristic curve 802 according 8, the reference temperature T _S It is a V-shaped characteristic curve that is convex upward with the center of symmetry. In the load capacity characteristic curve 802, the upward convex quadratic curve component is smaller than the load capacity characteristic curve 602 shown in FIG. The difference between the quadratic curve component of the load capacity characteristic curve 802 and the load capacity characteristic curve 602 shown in FIG. 6 is due to the fact that the V-shaped applied voltage characteristic curve 801 has a downward convex quadratic curve component. . This load capacity characteristic curve 802 is set so as to compensate the frequency temperature characteristic of the oscillation frequency F ₀ via [Equation 3]. It goes without saying that this setting can be easily made by selecting the ratings of the variable capacitance diode used and the capacitive element to be combined to correspond to the V-shaped applied voltage characteristic curve 801, and is merely a design matter.

FIG. 9 is a second characteristic diagram for explaining the temperature characteristics of the oscillation frequency when the load capacity characteristic curve 802 shown in FIG. 8 is adopted with respect to the load capacity of the crystal oscillation circuit according to the present invention. Is the frequency change rate, and the horizontal axis is the temperature. The temperature characteristic of the oscillation frequency when there is no temperature dependency of the load capacitance C _L is the pre-compensation temperature special curve 901 shown in this figure, which is almost the temperature change curve of the series resonance frequency F _r of the tuning fork crystal resonator. It is an equal temperature change curve. The peak temperature of the pre-compensation temperature special curve 901 is set to the same temperature as the reference temperature T _S shown in FIG. 8 by adjusting the cut angle, and the load capacity characteristic curve 802 shown in FIG. 8 is adopted for the load capacity. The temperature characteristic of the oscillation frequency in this case is the post-compensation temperature characteristic curve 902 shown in this figure. As can be seen from this post-compensation temperature characteristic curve 902, by adopting the load capacity characteristic curve 801, the quadratic curve component is also smaller than the post-compensation temperature characteristic curve 702 shown in FIG. It becomes clear that a stable frequency temperature characteristic can be obtained. This is because the V-shaped applied voltage characteristic curve 801 has a downwardly convex quadratic curve component.

The above is the description of the temperature compensation using the load capacity change according to the present invention. Next, a mechanism for generating a V-shaped applied voltage for controlling the load capacity according to the present invention will be described. FIG. 10 is a block diagram illustrating a V-shaped applied voltage generation mechanism using the thermoelectric generator according to the present invention. One surface of the thermoelectric generator 1001 according to the present invention is in contact with the constant heat generating portion 1002 at the temperature T ₀ , and the other surface is connected to the heat radiating portion 1003 to the outside. A power generation voltage ΔV is output from the thermoelectric generator 1001 in proportion to the temperature difference ΔT between the heat generating portion 1002 and the heat radiating portion 1003.
Where the temperature difference ΔT is

Then, the generated voltage ΔV is proportional constant k

Therefore, when the temperature of the heat radiating part 1003 is lower than the temperature T ₀ of the heat generating part 1002, it becomes a negative voltage, and when it is higher than the temperature T ₀ , it becomes a positive voltage. Therefore, there is also a function as a temperature difference sensor that senses a temperature difference with the temperature T ₀ as a reference temperature by monitoring the generated voltage ΔV.

The generated voltage ΔV is input to the switching circuit 1004, the booster circuit 1005, and the power storage circuit 1006. The boost / control circuit 1007 and the switching circuit 1004 are driven by the electric power supplied from the power storage circuit 1006. This step-up / control circuit 1007 monitors the generated voltage ΔV, and when the temperature T of the heat dissipating unit 1003 falls below the temperature T ₀ of the heat generating unit 1002 and becomes negative, the switching circuit 1004 is activated to invert the sign of the generated voltage. . This series of voltage control is performed by a V-shaped voltage control circuit 1008 built in the booster / control circuit 1007. The V-shaped voltage control circuit 1008 and the switching circuit 1004 have a temperature T ₀ as the center of symmetry. A V-shaped voltage signal is generated. This V-shaped voltage signal is amplified to a desired voltage by an amplifier circuit 1009 built in the booster / control circuit 1007 and output as a V-shaped applied voltage shown in FIGS. 6 and 8, and the load capacitance of the crystal oscillation circuit Input to the configuration unit 1010. Since this series of operations is performed with the voltage supplied from the thermoelectric generator 1001, no other power supply source is required.

From the above description, the reference temperature T _{S at the} center of symmetry of the V-shaped applied voltage characteristic curve shown in FIGS. 6 and 8 and the apex temperature in the frequency temperature characteristic of the series resonance frequency of the tuning fork type crystal resonator are expressed as the heating unit 1002. of set equal to the temperature T _0, if further setting the amplification factor of as much as possible to the desired V-shaped applied voltage characteristic curve the amplifier circuit 1009, a temperature compensation of the oscillation frequency of the crystal oscillator circuit is to be able to realize. The temperature compensation method according to the present invention is not limited to a tuning fork type crystal resonator, and is a temperature compensation method applicable to all crystal resonators having a parabolic frequency temperature characteristic. Further, although the heat generating unit 1002 having a constant temperature shown in FIG. 10 assumes a living body surface having a constant body temperature, it is not necessarily particular to a living body, and is effective only in a place and environment where the temperature is constant. Is specified here.

Hereinafter, a temperature compensation method for a thermoelectric portable device according to an embodiment of the present invention will be described. FIG. 1 is a block diagram for explaining a first embodiment of a temperature compensation method for a thermoelectric portable device according to the present invention. This figure is composed of the V-shaped voltage generator 101 and the crystal oscillation circuit 108 described with reference to FIG. 10. The V-shaped voltage generator 101 is similar to the description of FIG. 10 in that it includes the thermoelectric generator 102 and the switching circuit 103. , A booster circuit 104, a power storage circuit 105, a V-shaped voltage control circuit 106, and an amplifier circuit 107. The V-shaped voltage generation and control in the V-shaped voltage generator 101 has been described in the description of FIG. The crystal oscillation circuit 108 includes a crystal resonator 109, a gate capacitor 110, a drain capacitor 111, an inverting amplifier 112, and a buffer 113. The crystal unit 109 is a crystal unit having a parabolic frequency temperature characteristic represented by a tuning fork type crystal unit, and the apex temperature of the parabola is substantially the same as the temperature of the heat generating unit 1002 shown in FIG. The temperature is set. In particular, in a biological wearable timing device represented by a wristwatch or the like, this vertex temperature is set to be approximately equal to the body temperature of the living body. The portion constituting the load capacitance of the crystal oscillation circuit 108 is a load capacitance constituting portion 114 shown in the figure. The load capacitance configuration unit 114 in this figure simply has a configuration in which each of the gate capacitance 110 and the drain capacitance 111 is replaced with one variable capacitance diode. At this time, if the capacitance value of the gate capacitance 110 is C _vg and the capacitance value of the drain capacitance is C _vd , the voltage variable load capacitance C _{vL according} to the present invention determined by the load capacitance configuration unit 114 is

It becomes.
The V-shaped voltage generated by the V-shaped voltage generating unit 101 shown in FIG. 1 is applied to both the gate capacitance 110 and the drain capacitance 111 of the load capacitance forming unit 114 of the crystal oscillation circuit 108. As a result, the oscillation frequency excited by the crystal oscillation circuit 108 is temperature-compensated and has a frequency-temperature characteristic that is stable against temperature changes. The temperature-compensated oscillation frequency is input to the frequency dividing circuit 115 shown in the figure, and is converted into a pulse signal having a period of 1 second by the frequency dividing circuit 115.

  When the linear V-shaped applied voltage characteristic curve 601 shown in FIG. 6 is generated, the amplifier circuit 107 of the V-shaped voltage generator 101 shown in this figure is a linear amplifier circuit. On the other hand, when the V-shaped applied voltage characteristic curve 801 including the convex quadratic curve component shown in FIG. 8 is generated, the amplifying circuit 107 of the V-shaped voltage generator 101 shown in FIG. It becomes a circuit.

(Embodiment 2)
An example of a bioelectric portable device with a thermoelectric generation type timekeeping function according to Embodiment 2 of the present invention will be described. FIG. 2 is a block diagram for explaining a second embodiment of the temperature compensation method for a thermoelectric portable device according to the present invention. This figure is composed of a V-shaped voltage generator 201 and a crystal oscillation circuit 208 as in FIG. 1 of the first embodiment. The V-shaped voltage generator 201 is similar to the description of FIG. 202, a switching circuit 203, a booster circuit 204, a storage circuit 205, a V-shaped voltage control circuit 206, and an amplifier circuit 207. The V-shaped voltage generation and control in the V-shaped voltage generator 201 has been described in the description of FIG. The crystal oscillation circuit 208 includes a crystal resonator 209, a gate capacitor 210, a drain capacitor 211, an inverting amplifier 212, and a buffer 213. The crystal resonator 209 is a crystal resonator having a parabolic frequency temperature characteristic represented by a tuning fork as a type crystal resonator, and the apex temperature of the parabola is substantially equal to the temperature of the heating unit 1002 shown in FIG. The same temperature is set. In particular, in a biological wearable timing device represented by a wristwatch or the like, this vertex temperature is set to be approximately equal to the body temperature of the living body. The portion constituting the load capacitance of the crystal oscillation circuit 208 is a load capacitance constituting portion 214 shown in the figure. 2 has a configuration in which each of the gate capacitance 210 and the drain capacitance 211 is simply replaced with one variable capacitance diode. At this time, if the capacitance value of the gate capacitance 110 is C _vg and the capacitance value of the drain capacitance is C _vd , the voltage variable load capacitance C _{vL according} to the present invention determined by the load capacitance configuration unit 114 is as shown in FIG. Like [Formula 7].

  The V-shaped voltage generated by the V-shaped voltage generating unit 201 is applied to both the gate capacitance 210 and the drain capacitance 211 of the load capacitance forming unit 214 of the crystal oscillation circuit 208. As a result, the oscillation frequency excited by the crystal oscillation circuit 208 is temperature-compensated and has a frequency-temperature characteristic that is stable against temperature changes. The temperature-compensated oscillation frequency is input to the frequency dividing circuit 215 shown in the figure, and is converted into a pulse signal having a period of 1 second by the frequency dividing circuit 215 to drive other components 216.

  When the linear V-shaped applied voltage characteristic curve 601 illustrated in FIG. 6 is generated, the amplifier circuit 207 of the V-shaped voltage generation unit 201 illustrated in FIG. 6 is a linear amplifier circuit. On the other hand, when the V-shaped applied voltage characteristic curve 801 including the convex quadratic curve component shown in FIG. 8 is generated, the amplifier circuit 207 of the V-shaped voltage generator 201 shown in FIG. It becomes a circuit.

  In the second embodiment of the temperature compensation method for the thermoelectric generation portable device described in FIG. 2, the electric power accumulated in the power storage circuit 205 of the V-shaped voltage generator 201 drives the V-shaped voltage generator circuit 201. In addition, the crystal oscillation circuit 208, the frequency dividing circuit 215, and other components 216 are also driven.

  As described above, the electrical wiring of the variable capacitance diode and the method of applying the V-shaped applied voltage in the load capacitance configuration unit in the temperature compensation method for the thermoelectric generation portable device according to the present invention are not necessarily configured as shown in FIGS. There is no limitation, and it is needless to say that the design can be changed according to the specifications of the product. Further, the thermoelectric generator of the V-shaped voltage generator is not necessarily limited to the arrangement configuration of one thermoelectric generator as shown in FIGS. 1 and 2, and the two thermoelectric generators are connected to each other in polarity. It is also possible to use a configuration in which these are changed.

DESCRIPTION OF SYMBOLS 101 V-shaped voltage generation part 102 Thermoelectric power generation element 103 Switching circuit 104 Booster circuit 105 Power storage circuit 106 V-shaped voltage control circuit 107 Amplifier circuit 108 Crystal oscillation circuit 109 Crystal oscillator 111 Gate capacity 112 Drain capacity 113 Buffer 114 Load capacity configuration 115 frequency divider circuit

Claims (4)

A crystal oscillation circuit having a crystal resonator;
A thermoelectric generator that generates electricity based on a heat source and a temperature difference;
A control voltage is generated from the generated voltage output from the thermoelectric generator, voltage control is performed on the load capacitance value of the crystal oscillation circuit based on the value of the control voltage, and temperature characteristics of the oscillation frequency of the crystal oscillation circuit are controlled. And a thermoelectric power generation portable device characterized by having a control unit. The crystal unit is a tuning fork type crystal unit,
The apex temperature in the temperature characteristic of the oscillation frequency of the tuning fork type crystal resonator is substantially the same as the temperature of the heat source,
2. The thermoelectric generator according to claim 1, wherein the temperature dependency of the control voltage is set to a V-shaped characteristic that is a downwardly convex V-shape with the vertex temperature as a symmetry point. 3. machine.   The thermoelectric generation portable device according to claim 2, wherein a quadratic curve component having a positive coefficient is included in the V-shaped characteristic.   The control unit has a function of boosting and storing the power generation voltage output from the thermoelectric generator, and driving the crystal oscillation circuit using the boosted or the stored power generation voltage. The thermoelectric power generation type portable device according to claim 2 or claim 3.

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