JP5836691B2 - 発振器 - Google Patents
発振器 Download PDFInfo
- Publication number
- JP5836691B2 JP5836691B2 JP2011173939A JP2011173939A JP5836691B2 JP 5836691 B2 JP5836691 B2 JP 5836691B2 JP 2011173939 A JP2011173939 A JP 2011173939A JP 2011173939 A JP2011173939 A JP 2011173939A JP 5836691 B2 JP5836691 B2 JP 5836691B2
- Authority
- JP
- Japan
- Prior art keywords
- negative resistance
- resistance element
- oscillator
- voltage
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B17/00—Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
- H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
- H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011173939A JP5836691B2 (ja) | 2010-09-22 | 2011-08-09 | 発振器 |
| US13/232,896 US8816785B2 (en) | 2010-09-22 | 2011-09-14 | Oscillator |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010211950 | 2010-09-22 | ||
| JP2010211950 | 2010-09-22 | ||
| JP2011173939A JP5836691B2 (ja) | 2010-09-22 | 2011-08-09 | 発振器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012090255A JP2012090255A (ja) | 2012-05-10 |
| JP2012090255A5 JP2012090255A5 (enExample) | 2014-07-31 |
| JP5836691B2 true JP5836691B2 (ja) | 2015-12-24 |
Family
ID=45817209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011173939A Active JP5836691B2 (ja) | 2010-09-22 | 2011-08-09 | 発振器 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8816785B2 (enExample) |
| JP (1) | JP5836691B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6280310B2 (ja) | 2012-06-06 | 2018-02-14 | キヤノン株式会社 | 発振器 |
| JP6282041B2 (ja) * | 2013-03-29 | 2018-02-21 | キヤノン株式会社 | 発振器 |
| JP6870135B2 (ja) * | 2014-02-28 | 2021-05-12 | キヤノン株式会社 | 素子 |
| JP6682185B2 (ja) | 2014-02-28 | 2020-04-15 | キヤノン株式会社 | 素子 |
| US10270390B2 (en) | 2014-05-08 | 2019-04-23 | Tokyo Institute Of Technology | Frequency-variable terahertz oscillator and method for manufacturing the same |
| JP2016119647A (ja) * | 2014-12-19 | 2016-06-30 | 日本電波工業株式会社 | 発振器 |
| WO2020000258A1 (zh) * | 2018-06-27 | 2020-01-02 | 深圳市太赫兹科技创新研究院 | 一种基于共振遂穿二极管的太赫兹振荡电路及振荡器 |
| JP7088549B2 (ja) * | 2018-11-19 | 2022-06-21 | 国立大学法人東京工業大学 | 高出力テラヘルツ発振器 |
| JP7356068B2 (ja) * | 2020-05-18 | 2023-10-04 | 富士通株式会社 | 発振回路および情報処理装置 |
| KR102863959B1 (ko) * | 2023-09-25 | 2025-09-24 | 한국과학기술원 | 하나 이상의 단위 공진기를 포함하는 마이크로파 발진기 및 이를 이용한 둘 이상의 주파수를 가지는 마이크로파 생성 방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3134949A (en) * | 1960-01-08 | 1964-05-26 | Gen Electric | Negative resistance frequency modulated oscillator |
| US5223802A (en) * | 1992-04-01 | 1993-06-29 | The United States Of America As Represented By The Secretary Of The Army | Optically controlled resonant tunnel diode oscillator |
| US6993315B1 (en) * | 2000-11-21 | 2006-01-31 | Raytheon Company | Super-regenerative microwave detector |
| JP3923260B2 (ja) | 2001-01-18 | 2007-05-30 | シャープ株式会社 | 半導体装置の製造方法および発振器 |
-
2011
- 2011-08-09 JP JP2011173939A patent/JP5836691B2/ja active Active
- 2011-09-14 US US13/232,896 patent/US8816785B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012090255A (ja) | 2012-05-10 |
| US8816785B2 (en) | 2014-08-26 |
| US20120068778A1 (en) | 2012-03-22 |
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