JP5824874B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP5824874B2
JP5824874B2 JP2011118909A JP2011118909A JP5824874B2 JP 5824874 B2 JP5824874 B2 JP 5824874B2 JP 2011118909 A JP2011118909 A JP 2011118909A JP 2011118909 A JP2011118909 A JP 2011118909A JP 5824874 B2 JP5824874 B2 JP 5824874B2
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insulating sheet
heat sink
semiconductor device
frame
convex portion
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JP2012248660A (en
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中川　信也
信也 中川
裕史 川島
裕史 川島
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

本発明は、例えば電力のスイッチングなどに用いられる半導体装置に関する。   The present invention relates to a semiconductor device used for power switching, for example.

特許文献１には、ヒートシンクに絶縁シートを接着した半導体装置が開示されている。   Patent Document 1 discloses a semiconductor device in which an insulating sheet is bonded to a heat sink.

特開２００６−２１０５９７号公報JP 2006-210597 A

ヒートシンクに接着された絶縁シートはモールド樹脂に覆われる。そして、モールド樹脂などから絶縁シートに力が及ぼされると、絶縁シートの外周部分がヒートシンクから剥離することがある。絶縁シートが剥離すると、絶縁シートからヒートシンクへの放熱が十分できないことがある。   The insulating sheet bonded to the heat sink is covered with mold resin. When a force is applied to the insulating sheet from a mold resin or the like, the outer peripheral portion of the insulating sheet may be peeled off from the heat sink. When the insulating sheet is peeled off, there is a case where heat radiation from the insulating sheet to the heat sink cannot be sufficiently performed.

本発明は、上述のような課題を解決するためになされたもので、絶縁シートの外周部分の剥離を防止できる半導体装置を提供することを目的とする。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor device capable of preventing peeling of the outer peripheral portion of an insulating sheet.

本発明に係る半導体装置は、平坦部と該平坦部を囲むように形成された凸部とを有するヒートシンクと、フレームと、下面が該平坦部及び該凸部に接着し、上面全体が該フレームと接した絶縁シートと、該フレームの上面に固定された半導体素子と、該ヒートシンクの該絶縁シートが接着した面と反対の面、及び該フレームの一部を外部に露出するように、該ヒートシンク、該フレーム、該絶縁シート、及び該半導体素子を覆うモールド樹脂と、を備えたことを特徴とする。 The semiconductor device according to the present invention includes a heat sink having a flat portion and a convex portion formed so as to surround the flat portion, a frame, a lower surface bonded to the flat portion and the convex portion, and an entire upper surface of the frame. and an insulating sheet in contact, so as to expose a semiconductor element fixed to the upper surface of the frame, the surface opposite to the insulating sheet of the heat sink is bonded surface, and a portion of said frame to the outside, the heat sink And a mold resin that covers the frame, the insulating sheet, and the semiconductor element.

本発明によれば、絶縁シートの外周部分がヒートシンクから剥離することを防止できる。   According to this invention, it can prevent that the outer peripheral part of an insulating sheet peels from a heat sink.

本発明の実施の形態１に係る半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device which concerns on Embodiment 1 of this invention. 本発明の実施の形態１に係る半導体装置のヒートシンクの斜視図である。It is a perspective view of the heat sink of the semiconductor device which concerns on Embodiment 1 of this invention. 本発明の実施の形態１に係る半導体装置の変形例を示す断面図である。It is sectional drawing which shows the modification of the semiconductor device which concerns on Embodiment 1 of this invention. 絶縁シート端部を面取り加工したことを示す断面図である。It is sectional drawing which shows having chamfered the insulating sheet edge part. 本発明の実施の形態２に係る半導体装置のうち、ヒートシンクと絶縁シートを示す断面図である。It is sectional drawing which shows a heat sink and an insulating sheet among the semiconductor devices which concern on Embodiment 2 of this invention. 本発明の実施の形態２に係る半導体装置の製造方法を示す図である。It is a figure which shows the manufacturing method of the semiconductor device which concerns on Embodiment 2 of this invention. 本発明の実施の形態３に係る半導体装置のうち、ヒートシンクと絶縁シートを示す断面図である。It is sectional drawing which shows a heat sink and an insulating sheet among the semiconductor devices which concern on Embodiment 3 of this invention.

実施の形態１．
図１は、本発明の実施の形態１に係る半導体装置を示す断面図である。半導体装置１０は、フレーム１２を備えている。フレーム１２は銅で形成されている。フレーム１２の表面側について説明する。フレーム１２には金属パターン１４を介してダイオード１６が固定されている。別の金属パターン１４にはＩＧＢＴ１８が固定されている。フレーム１２の上にはＩＣチップ２２が固定されている。ダイオード１６、ＩＧＢＴ１８、及びＩＣチップ２２の必要な電気的接続は、ワイヤ２０が担っている。 Embodiment 1 FIG.
FIG. 1 is a cross-sectional view showing a semiconductor device according to the first embodiment of the present invention. The semiconductor device 10 includes a frame 12. The frame 12 is made of copper. The surface side of the frame 12 will be described. A diode 16 is fixed to the frame 12 via a metal pattern 14. An IGBT 18 is fixed to another metal pattern 14. An IC chip 22 is fixed on the frame 12. The wires 20 are responsible for the necessary electrical connections of the diode 16, IGBT 18, and IC chip 22.

フレーム１２の裏面側について説明する。フレーム１２の裏面には絶縁シート２４が接着している。絶縁シート２４にはヒートシンク２６が接着している。ヒートシンク２６は、絶縁シート２４と接する面に、凸部２６ａと平坦部２６ｂを有している。絶縁シート２４は、ヒートシンク２６の凸部２６ａに囲まれるように平坦部２６ｂ及び凸部２６ａに接着している。つまり、絶縁シート２４の外周部分は凸部２６ａに接着し、中央部分は平坦部２６ｂに接着している。   The back side of the frame 12 will be described. An insulating sheet 24 is bonded to the back surface of the frame 12. A heat sink 26 is bonded to the insulating sheet 24. The heat sink 26 has a convex portion 26 a and a flat portion 26 b on the surface in contact with the insulating sheet 24. The insulating sheet 24 is bonded to the flat portion 26 b and the convex portion 26 a so as to be surrounded by the convex portion 26 a of the heat sink 26. That is, the outer peripheral portion of the insulating sheet 24 is bonded to the convex portion 26a, and the central portion is bonded to the flat portion 26b.

半導体装置１０は、モールド樹脂３０を有している。モールド樹脂３０は、ヒートシンク２６の絶縁シート２４が接着した面と反対の面を外部に露出するように、ヒートシンク２６、絶縁シート２４、ダイオード１６、及びＩＧＢＴ１８を覆っている。   The semiconductor device 10 has a mold resin 30. The mold resin 30 covers the heat sink 26, the insulating sheet 24, the diode 16, and the IGBT 18 so that the surface opposite to the surface to which the insulating sheet 24 of the heat sink 26 is bonded is exposed to the outside.

図２は、本発明の実施の形態１に係る半導体装置のヒートシンクの斜視図である。凸部２６ａは、平坦部２６ｂを囲むように形成されている。凸部２６ａは、ヒートシンク２６の端面（側面）において最も高く形成され、ヒートシンク２６の中央部分へ向かうほど低く形成されている。   FIG. 2 is a perspective view of the heat sink of the semiconductor device according to the first embodiment of the present invention. The convex portion 26a is formed so as to surround the flat portion 26b. The convex portion 26 a is formed highest on the end face (side surface) of the heat sink 26, and is formed lower toward the center portion of the heat sink 26.

本発明の実施の形態１に係る半導体装置によれば、絶縁シート２４の外周部分がヒートシンク２６から剥離することを防止できる。すなわち、絶縁シート２４の外周部分は凸部２６ａによりモールド樹脂３０から保護されるため、モールド樹脂３０から絶縁シート２４の外周部分に大きな力が及ぼされることを回避できる。そのため、絶縁シート２４の外周部分の応力を低く維持しその剥離を防止できる。   According to the semiconductor device according to the first embodiment of the present invention, it is possible to prevent the outer peripheral portion of the insulating sheet 24 from being peeled off from the heat sink 26. That is, since the outer peripheral portion of the insulating sheet 24 is protected from the mold resin 30 by the convex portion 26a, it is possible to avoid applying a large force from the mold resin 30 to the outer peripheral portion of the insulating sheet 24. Therefore, the stress at the outer peripheral portion of the insulating sheet 24 can be kept low and the peeling can be prevented.

本発明の実施の形態１に係る半導体装置１０によれば、ヒートシンク２６に凸部２６ａを形成するだけで、絶縁シート２４の剥離を容易に防止できる。また、凸部２６ａには絶縁シート２４が接着されており、凸部２６ａとフレーム１２との間には絶縁シート２４を介している。よって、凸部２６ａとフレーム１２との絶縁距離を確保できる。   According to the semiconductor device 10 according to the first embodiment of the present invention, the insulating sheet 24 can be easily prevented from being peeled off simply by forming the convex portion 26 a on the heat sink 26. An insulating sheet 24 is bonded to the convex portion 26a, and the insulating sheet 24 is interposed between the convex portion 26a and the frame 12. Therefore, an insulation distance between the convex portion 26a and the frame 12 can be secured.

図３は、本発明の実施の形態１に係る半導体装置の変形例を示す断面図である。ヒートシンク４０は凸部４０ａと平坦部４０ｂを備えている。凸部４０ａは、ヒートシンク４０の側面４０ｃよりも外側に突出している。その他の構成は、上述した構成と同様である。   FIG. 3 is a cross-sectional view showing a modification of the semiconductor device according to the first embodiment of the present invention. The heat sink 40 includes a convex portion 40a and a flat portion 40b. The convex portion 40 a protrudes outward from the side surface 40 c of the heat sink 40. Other configurations are the same as those described above.

凸部４０ａを側面４０ｃよりも外側に突出させると、凸部４０ａの先端をモールド樹脂に食い込ませることができる。これにより、絶縁シート４２の外周部分近傍のモールド樹脂が固定され、モールド樹脂が絶縁シート４２に及ぼす力を低減できる。よって絶縁シート４２の剥離を防止できる。なお、この効果は、凸部４０ａの先端がモールド樹脂に食い込むように構成すれば得られるものである。よって、凸部４０ａが側面４０ｃよりも外側に突出していなくてもよい。   When the convex portion 40a is projected outward from the side surface 40c, the tip of the convex portion 40a can be bitten into the mold resin. Thereby, the mold resin near the outer peripheral portion of the insulating sheet 42 is fixed, and the force exerted on the insulating sheet 42 by the mold resin can be reduced. Therefore, peeling of the insulating sheet 42 can be prevented. This effect can be obtained if the tip of the convex portion 40a is configured to bite into the mold resin. Therefore, the convex part 40a does not need to protrude outward from the side surface 40c.

ヒートシンクにより放熱する対象は、絶縁シートを介してヒートシンクに放熱する半導体素子であれば、ダイオード１６やＩＧＢＴ１８に限定されない。   An object to be radiated by the heat sink is not limited to the diode 16 or the IGBT 18 as long as it is a semiconductor element that radiates heat to the heat sink via an insulating sheet.

モールド樹脂から絶縁シートの外周部分に及ぼされる力を緩和するために、絶縁シートの端部を面取り加工してもよい。図４は、絶縁シート４４の端部を面取り加工したことを示す断面図である。絶縁シート４４の端部に面取り加工を施すことで、モールド樹脂から力を受けづらくなる。なお絶縁シートの端部に面取り加工を施しかつ、モールド樹脂の凸部をモールド樹脂に食い込ませるようにしてもよい。   In order to relieve the force exerted on the outer peripheral portion of the insulating sheet from the mold resin, the end portion of the insulating sheet may be chamfered. FIG. 4 is a cross-sectional view showing that the end portion of the insulating sheet 44 is chamfered. By chamfering the end portion of the insulating sheet 44, it is difficult to receive force from the mold resin. The end portion of the insulating sheet may be chamfered and the convex portion of the mold resin may be bitten into the mold resin.

実施の形態２．
図５は、本発明の実施の形態２に係る半導体装置のうち、ヒートシンクと絶縁シートを示す断面図である。図５に示さない部分は実施の形態１と同様である。 Embodiment 2. FIG.
FIG. 5 is a cross-sectional view showing a heat sink and an insulating sheet in the semiconductor device according to Embodiment 2 of the present invention. Parts not shown in FIG. 5 are the same as those in the first embodiment.

ヒートシンク５０に絶縁シート５２が接着されている。絶縁シート５２の外周部分５２ａは、ヒートシンク５０に圧着している。図６は、本発明の実施の形態２に係る半導体装置の製造方法を示す図である。まず、下金型５４にヒートシンク５０と絶縁シート５２をおく。次いで、上金型５６を用いて絶縁シート５２の外周部分をヒートシンク５０に押し付け、絶縁シート５２の外周部分をヒートシンク５０に圧着する。   An insulating sheet 52 is bonded to the heat sink 50. An outer peripheral portion 52 a of the insulating sheet 52 is pressure-bonded to the heat sink 50. FIG. 6 shows a method for manufacturing a semiconductor device according to the second embodiment of the present invention. First, the heat sink 50 and the insulating sheet 52 are placed on the lower mold 54. Next, the outer peripheral portion of the insulating sheet 52 is pressed against the heat sink 50 using the upper mold 56, and the outer peripheral portion of the insulating sheet 52 is pressed against the heat sink 50.

本発明の実施の形態２に係る半導体装置によれば、絶縁シート５２の外周部分５２ａがヒートシンク５０に圧着されているので、絶縁シート５２の剥離を防止できる。なお、本発明の実施の形態２に係る半導体装置は、少なくとも実施の形態１と同程度の変形が可能である。   According to the semiconductor device according to the second embodiment of the present invention, since the outer peripheral portion 52a of the insulating sheet 52 is pressure-bonded to the heat sink 50, peeling of the insulating sheet 52 can be prevented. Note that the semiconductor device according to the second embodiment of the present invention can be modified at least as much as the first embodiment.

実施の形態３．
図７は、本発明の実施の形態３に係る半導体装置のうち、ヒートシンクと絶縁シートを示す断面図である。図７に示さない部分は実施の形態１と同様である。 Embodiment 3 FIG.
FIG. 7 is a cross-sectional view showing a heat sink and an insulating sheet in the semiconductor device according to Embodiment 3 of the present invention. The parts not shown in FIG. 7 are the same as those in the first embodiment.

ヒートシンク６０の外周部分には溝６０ａが形成されている。凸部６０ｂはヒートシンク６０の最外周に形成されている。絶縁シート６２の外周部分は溝６０ａの内部に接着している。また、絶縁シート６２の外周部分は凸部６０ｂにも接着している。   A groove 60 a is formed in the outer peripheral portion of the heat sink 60. The convex portion 60 b is formed on the outermost periphery of the heat sink 60. The outer peripheral portion of the insulating sheet 62 is bonded to the inside of the groove 60a. The outer peripheral portion of the insulating sheet 62 is also bonded to the convex portion 60b.

本発明の実施の形態３に係る半導体装置によれば、絶縁シート６２の外周部分がヒートシンク６０の溝６０ａの内部に接着しているので、アンカー効果を得ることができる。よって絶縁シート６２の外周部分の剥離を防止できる。さらに、凸部６０ｂにより絶縁シート６２をモールド樹脂から保護できるので、絶縁シート６２の剥離防止の効果を高めることができる。   According to the semiconductor device according to the third embodiment of the present invention, since the outer peripheral portion of the insulating sheet 62 is bonded to the inside of the groove 60a of the heat sink 60, an anchor effect can be obtained. Therefore, peeling of the outer peripheral portion of the insulating sheet 62 can be prevented. Furthermore, since the insulating sheet 62 can be protected from the mold resin by the convex portions 60b, the effect of preventing the insulating sheet 62 from peeling off can be enhanced.

本発明の実施の形態３に係る半導体装置では、ヒートシンク６０に溝６０ａ及び凸部６０ｂを形成したが本発明はこれに限定されず、例えば溝のみを備える構成としてもよい。なお、本発明の実施の形態３に係る半導体装置は、少なくとも実施の形態１と同程度の変形が可能である。   In the semiconductor device according to the third embodiment of the present invention, the groove 60a and the convex portion 60b are formed in the heat sink 60. However, the present invention is not limited to this, and may be configured to include only the groove, for example. Note that the semiconductor device according to the third embodiment of the present invention can be modified at least as much as the first embodiment.

本発明の実施の形態２及び３に係る半導体装置は、絶縁シートの外周部分を絶縁シートの中央部分よりもヒートシンクに強く接着したことを特徴とする。この特徴を逸脱しない範囲において様々な変形が可能である。   The semiconductor devices according to the second and third embodiments of the present invention are characterized in that the outer peripheral portion of the insulating sheet is more strongly bonded to the heat sink than the central portion of the insulating sheet. Various modifications are possible without departing from this feature.

１０ 半導体装置、 １２ フレーム、 ２４ 絶縁シート、 ２６ ヒートシンク、 ２６ａ 凸部、 ２６ｂ 平坦部、 ６０ ヒートシンク、 ６０ａ 溝、 ６０ｂ 凸部   10 semiconductor device, 12 frame, 24 insulating sheet, 26 heat sink, 26a convex part, 26b flat part, 60 heat sink, 60a groove, 60b convex part

Claims (5)

平坦部と前記平坦部を囲むように形成された凸部とを有するヒートシンクと、
フレームと、
下面が前記平坦部及び前記凸部に接着し、上面全体が前記フレームと接した絶縁シートと、
前記フレームの上面に固定された半導体素子と、
前記ヒートシンクの前記絶縁シートが接着した面と反対の面、及び前記フレームの一部を外部に露出するように、前記ヒートシンク、前記フレーム、前記絶縁シート、及び前記半導体素子を覆うモールド樹脂と、を備えたことを特徴とする半導体装置。 A heat sink having a flat portion and a convex portion formed so as to surround the flat portion;
Frame,
An insulating sheet having a lower surface adhered to the flat portion and the convex portion, and an entire upper surface contacting the frame;
A semiconductor element fixed to the upper surface of the frame;
A mold resin that covers the heat sink, the frame, the insulating sheet, and the semiconductor element so that the surface of the heat sink opposite to the surface to which the insulating sheet is bonded and a part of the frame are exposed to the outside. A semiconductor device comprising the semiconductor device. 前記凸部の先端は、尖った形状を有し、前記モールド樹脂に食い込むことを特徴とする請求項１に記載の半導体装置。   The semiconductor device according to claim 1, wherein a tip end of the convex portion has a sharp shape and bites into the mold resin. 前記絶縁シートの端部は面取り加工されたことを特徴とする請求項１又は２に記載の半導体装置。   The semiconductor device according to claim 1, wherein an end portion of the insulating sheet is chamfered. 前記凸部は、前記平坦部から前記ヒートシンクの側面に向かう斜面を有することで、前記ヒートシンクの側面において最も高く形成されたことを特徴とする請求項１又は３に記載の半導体装置。   4. The semiconductor device according to claim 1, wherein the convex portion has an inclined surface from the flat portion toward the side surface of the heat sink, and is formed highest on the side surface of the heat sink. 前記絶縁シートの厚さは、前記ヒートシンクの側面と前記フレームの間で最小になることを特徴とする請求項４に記載の半導体装置。   The semiconductor device according to claim 4, wherein a thickness of the insulating sheet is minimized between a side surface of the heat sink and the frame.
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