JP5794433B2 - 極紫外光源のためのビーム搬送システム - Google Patents
極紫外光源のためのビーム搬送システム Download PDFInfo
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- JP5794433B2 JP5794433B2 JP2012544609A JP2012544609A JP5794433B2 JP 5794433 B2 JP5794433 B2 JP 5794433B2 JP 2012544609 A JP2012544609 A JP 2012544609A JP 2012544609 A JP2012544609 A JP 2012544609A JP 5794433 B2 JP5794433 B2 JP 5794433B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10038—Amplitude control
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- X-Ray Techniques (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
305 駆動レーザシステム
310 ターゲット位置
315 ビーム搬送システム
320 集束アセンブリ
Claims (12)
- 増幅光ビームを生成する駆動レーザシステムと、
ターゲット位置でターゲット材料を生成するように構成されたターゲット材料送出システムと、
前記駆動レーザシステムから出射された前記増幅光ビームを受け取り、かつ該増幅光ビームを前記ターゲット位置に向けて誘導するように構成されたビーム送出システムであって、楕円放物面の軸外セグメントである反射面を有する曲面ミラーを含むビーム拡張システムを含む前記ビーム送出システムと、
を含むことを特徴とする極紫外光システム。 - 前記ターゲット材料送出システムは、前記ターゲット位置と交差するターゲット材料経路に沿って前記ターゲット材料を出力することができるターゲット材料出口を含むことを特徴とする請求項1に記載のシステム。
- 前記曲面ミラーは、発散曲面ミラーであることを特徴とする請求項1に記載のシステム。
- 収束レンズを更に含み、
前記曲面ミラーは、前記増幅光ビームを前記駆動レーザシステムから受け取り、
前記収束レンズは、前記曲面ミラーから反射した発散光ビームを受け取り、かつ該光ビームを該曲面ミラーに当る前記増幅光ビームの断面よりも大きい断面を有する平行化増幅光ビームに実質的に平行化する、
ことを特徴とする請求項3に記載のシステム。 - 前記曲面ミラーは、収束曲面ミラーであることを特徴とする請求項1に記載のシステム。
- 発散レンズを更に含み、
前記発散レンズは、前記増幅光ビームを前記駆動レーザシステムから受け取り、
前記収束ミラーは、前記発散レンズを透過した発散光ビームを受け取り、かつ該発散レンズに当る前記増幅光ビームの断面よりも大きい断面を有する実質的に平行化された増幅光ビームを反射する、
ことを特徴とする請求項5に記載のシステム。 - 楕円放物線面の軸外セグメントである反射面を有する別の曲面ミラーを更に含み、
前記曲面ミラーは、前記増幅光ビームを前記駆動レーザシステムから受け取る発散曲面ミラーであり、
他方の曲面ミラーは、前記曲面ミラーから反射した発散光ビームを受け取り、かつ該光ビームを該曲面ミラーに当る前記増幅光ビームの断面よりも大きい断面を有する平行化増幅光ビームに実質的に平行化するように置かれた収束曲面ミラーである、
ことを特徴とする請求項1に記載のシステム。 - 前記増幅光ビームが前記ターゲット位置に向けて誘導されるときに通過する開口を有する集光器を、さらに含むことを特徴とする請求項1に記載のシステム。
- 前記ターゲット位置を内部に有するチャンバを含み、前記ビーム送出システムは前記チャンバの外部に設けられていることを特徴とする請求項1に記載のシステム。
- 前記増幅光ビームを前記ターゲット位置に集束する集束アセンブリをさらに含み、前記ビーム送出システムは、前記集束アセンブリと駆動レーザシステムとの間にあることを特徴とする請求項1に記載のシステム。
- 前記ビーム拡張システムは、前記ビーム拡張システムの出口における横サイズが入口における横サイズよりも大きくなるように、前記増幅光ビームを拡張することを特徴とする請求項1に記載のシステム。
- 前記ビーム拡張システムは、楕円放物線面の軸外セグメントである反射面を有する別の曲面ミラーを含み、前記曲面ミラー及び前記別の曲面ミラーは、前記曲面ミラー及び前記別の曲面ミラーの出力における光ビームの断面が前記曲面ミラー及び前記別の曲面ミラーの入力における断面よりも大きくなるように互いに配置されていることを特徴とする請求項1に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/638,092 | 2009-12-15 | ||
US12/638,092 US8173985B2 (en) | 2009-12-15 | 2009-12-15 | Beam transport system for extreme ultraviolet light source |
PCT/US2010/059280 WO2011075346A1 (en) | 2009-12-15 | 2010-12-07 | Beam transport system for extreme ultraviolet light source |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015028912A Division JP5890543B2 (ja) | 2009-12-15 | 2015-02-17 | 極紫外光源のためのビーム搬送システム |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013513930A JP2013513930A (ja) | 2013-04-22 |
JP5794433B2 true JP5794433B2 (ja) | 2015-10-14 |
Family
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Family Applications (2)
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JP2012544609A Active JP5794433B2 (ja) | 2009-12-15 | 2010-12-07 | 極紫外光源のためのビーム搬送システム |
JP2015028912A Expired - Fee Related JP5890543B2 (ja) | 2009-12-15 | 2015-02-17 | 極紫外光源のためのビーム搬送システム |
Family Applications After (1)
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JP2015028912A Expired - Fee Related JP5890543B2 (ja) | 2009-12-15 | 2015-02-17 | 極紫外光源のためのビーム搬送システム |
Country Status (5)
Country | Link |
---|---|
US (1) | US8173985B2 (ja) |
JP (2) | JP5794433B2 (ja) |
KR (1) | KR101688447B1 (ja) |
TW (1) | TWI469691B (ja) |
WO (1) | WO2011075346A1 (ja) |
Families Citing this family (45)
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JP2010123714A (ja) * | 2008-11-19 | 2010-06-03 | Ushio Inc | 極端紫外光光源装置 |
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WO2012031841A1 (en) * | 2010-09-08 | 2012-03-15 | Asml Netherlands B.V. | Lithographic apparatus, euv radiation generation apparatus and device manufacturing method |
US8462425B2 (en) | 2010-10-18 | 2013-06-11 | Cymer, Inc. | Oscillator-amplifier drive laser with seed protection for an EUV light source |
US8633459B2 (en) | 2011-03-02 | 2014-01-21 | Cymer, Llc | Systems and methods for optics cleaning in an EUV light source |
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US9516730B2 (en) * | 2011-06-08 | 2016-12-06 | Asml Netherlands B.V. | Systems and methods for buffer gas flow stabilization in a laser produced plasma light source |
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EP3248442B1 (de) | 2015-01-21 | 2019-01-09 | TRUMPF Lasersystems for Semiconductor Manufacturing GmbH | Strahlführungseinrichtung, euv-strahlungserzeugungsvorrichtung und verfahren zum einstellen eines strahldurchmessers und eines öffnungswinkels eines laserstrahls |
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JP2015118946A (ja) | 2015-06-25 |
TWI469691B (zh) | 2015-01-11 |
US8173985B2 (en) | 2012-05-08 |
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TW201138557A (en) | 2011-11-01 |
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