JP5791383B2 - Wafer bonding method - Google Patents

Description

  The present invention relates to a wafer bonding method for bonding main surfaces of wafers having the same main surface size.

For example, when bonding by anodic bonding is used, bonding by an adhesive is used, or bonding by direct bonding may be used as a wafer bonding method.
In particular, in the wafer bonding method using direct bonding, bonding can be performed without providing a metal film between the wafers as in the case of bonding using anodic bonding, as in the case of bonding using an adhesive. Can be bonded without providing an adhesive between the wafers, and is therefore often used in a method of manufacturing an optical conversion element.

The optical conversion element has a characteristic of converting and emitting incident light.
Such an optical conversion element is composed of, for example, two wafers, and the main surfaces of the two wafers are bonded by direct bonding.

One wafer uses a right crystal having crystal axes composed of an X axis, a Y axis, and a Z axis orthogonal to each other, and both main surfaces are rectangular.
One of the wafers is an optical rotation plate whose main surface is parallel to the X axis and Y axis and whose thickness direction is parallel to the Z axis.

The other wafer uses a left quartz crystal having crystal axes composed of an X axis, a Y axis, and a Z axis orthogonal to each other, and both main surfaces are rectangular.
The other wafer has the same main surface as the main surface of one wafer.
The other wafer is an optical rotation plate whose main surface is parallel to the X axis and Y axis and whose thickness direction is parallel to the Z axis.

  In such an optical component element, one main surface of one wafer and one main surface of the other wafer are bonded by direct bonding, and light incident from the other main surface of one wafer is converted. However, it has a characteristic of emitting light from the other main surface of the other wafer (see, for example, Patent Document 1).

  A bonding method for bonding wafers by direct bonding includes, for example, a wafer mounting process, an irradiation process, a wafer placement process, and a bonding process.

(Wafer mounting process)
The wafer mounting process is a process of mounting a wafer to be bonded to a spacer, for example.
The spacer 310 has, for example, a rectangular flat plate shape as shown in FIGS. 6A and 6B, and has a first recess space 211 and a second recess space 212 on one main surface. Is formed.
Further, the spacer 210 has a first recessed space 211 having a rectangular shape when viewed from one main surface, and the second recessed space 212 has four corners of the opening of the first recessed space 211. It is formed to be circular.
The first recess space 211 has the same size as the main surface of the wafer to which the bottom surface is bonded, and the length from the opening to the bottom surface of the first recess space 211 is from one main surface of the wafer to the other. It is shorter than the length to the main surface.
The second recess space 212 has a size that allows the tip of the tweezers to be inserted, and is used when the wafer is taken out from the spacer 210.
In the wafer mounting process, the wafer to be bonded is mounted on the spacer 210 so as to be accommodated in the first recessed space 210 of the spacer 210.

(Irradiation process)
For example, as shown in FIG. 7, the irradiation process is a process of irradiating light emitted from the excimer irradiation lamp 120 onto a surface to be bonded to the wafer W mounted on the spacer 210.
In the irradiation process, the light emitted from the excimer irradiation lamp 120 is irradiated to remove the oxide film, adsorbate, and contaminants on the surface of the wafer W, and the surface of the irradiated wafer W is activated.

(Wafer placement process)
As shown in FIG. 8, the wafer placement step is a step of placing the wafers W taken out from the spacers 210 so that the irradiated surfaces face each other.
In the wafer placement step, the surface irradiated with the light irradiated from the excimer irradiation lamp 120 of one wafer W is opposed to the surface irradiated with the light irradiated from the excimer irradiation lamp 120 of the other wafer W. The wafer W is arranged in a state of being held by tweezers so as to sandwich the side surface of the other wafer W.

(Lamination process)
The bonding process was activated by bringing the surfaces of the wafer W arranged so that the irradiated surfaces of the wafer W face each other while being held by tweezers so as to sandwich the side surface of the other wafer W. This is a process of joining the surfaces together.

  Therefore, in the wafer bonding method, after the wafer W is irradiated with the light emitted from the excimer irradiation lamp 120, the irradiated surface of one wafer W and the irradiated surface of the other wafer W face each other. The other wafer W is sandwiched and held by tweezers, and after placing the wafer W, it is brought into contact and bonded.

  JP 2007-114520 A

However, the conventional wafer bonding method uses tweezers so that the irradiated surface of one wafer faces the irradiated surface of the other wafer after irradiating the wafer with light emitted from an excimer irradiation lamp. Since the other wafer is sandwiched and held, and the wafer is placed and brought into contact with each other, it takes time and effort, and after bonding, the main surface of one wafer is directed from one wafer to the other wafer. When viewed, there is a risk that a joining deviation occurs such that a predetermined edge portion of the main surface of one wafer does not overlap a predetermined edge portion of the main surface of the other wafer.
Therefore, in the conventional wafer bonding method, when a bonding deviation occurs, the wafer having the bonding deviation must be cleaned and re-bonded in order to re-bond, which requires labor and time, and is produced. May decrease.

Moreover, the conventional wafer bonding method irradiates a wafer to be bonded with light emitted from an excimer irradiation lamp so that the irradiated surface of one wafer and the irradiated surface of the other wafer face each other. Since the other wafer is sandwiched and held by tweezers and the two wafers are placed and contacted and bonded, the deposits that have adhered to the tweezers adhere to the surface of the wafer to be bonded, and the foreign matter between the bonded wafers There is a risk of mixing. In addition, the edge of the wafer surface to be bonded may be damaged by tweezers, and the lost portion may be mixed as foreign matter between the wafers.
For this reason, according to the conventional wafer bonding method, foreign matter is mixed between the wafers to be bonded,
There is a risk that productivity after bonding may be reduced.
When light is incident in the direction from one bonded wafer to the other wafer,
In the conventional wafer bonding method, there is a risk that the appearance defect such as interference fringes caused by foreign matters mixed between the bonded wafers may occur and productivity may be reduced.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a wafer bonding method with improved productivity capable of bonding wafers without causing a wafer misalignment and without mixing foreign substances between the wafers.

In order to solve the above-described problem, a wafer joining method for joining the main surfaces of two wafers in which both main surfaces have a rectangular shape, wherein both main surfaces are formed in a rectangular shape and from one main surface The first wall portion and the both ends of the first wall portion are provided at the edge portions along predetermined three sides of one main surface of the flat plate portion in which the through hole is formed extending to the other main surface. A wall portion comprising two pairs of second wall portions is provided, and the length of the wall portion from the surface in contact with the flat plate portion to the surface of the wall portion facing the surface in contact with the flat plate portion is the wafer. The length of the first wall from the surface of the second wall that is in contact with the first wall is twice the length from one main surface of the wafer to the other main surface of the wafer The length to the surface of the second wall portion facing the surface of the second wall portion in contact with the second wall portion is the length of the second wall portion in contact with the first wall portion. The first wall portion is a half of the length from the side facing the predetermined one side of the flat plate portion provided on the edge to the predetermined one side surface of the flat plate portion. the joining jig and the second joining jig of, said plate one main surface to be contacted with one main surface of the wafer in a predetermined one side of the first wall portion side is the wafer One wafer is mounted on the first bonding jig so that the side surfaces of the two pairs of the second wall portions are in contact with the other two predetermined side surfaces of the wafer, A wafer mounting step of mounting the other wafer on the two-joining jig, and the wafer facing the surface of the first bonding jig and the wafer mounted on the second bonding jig contacting the flat plate portion. An irradiation step of irradiating the surface of the substrate with light emitted from an excimer irradiation lamp; One main face is said first bonding jigs said wafer sucked from the opening of the other main surface side the through hole of said plate so as to remain in contact with the flat plate portion of the wafer Ha And the side surface of the first wall portion in contact with a predetermined one side of the one wafer of the first bonding jig in a state of being held by the second bonding jig is a predetermined value of the other wafer. The first bonding jig that is in the same plane as the predetermined other side of the one wafer while contacting the side surface of the flat plate portion of the second bonding jig that is in the same plane as the other side. The first bonding jig and the second bonding jig are arranged such that the side surface of the flat plate portion is in contact with the side surface of the first wall portion that is in contact with a predetermined side of the other wafer of the second bonding jig. The joining jig placement step for placing the joining jig and the first joining jig arranged is held. A bonding step of bonding to said one wafer that said second of the one wafer the contacting the other wafer held by the joining jig of the other wafer is, the first for bonding characterized in that it comprises a dismounting step, a detaching the bonded said wafer from the jig and the second bonding jig.

According to such a wafer bonding method, the wall portion composed of the first wall portion and two pairs of second wall portions provided at both ends of the first wall portion is one main surface. The thickness of the wall portion provided at the edge along the predetermined three sides of one main surface of the flat plate portion in which the through hole is formed from the first main surface to the other main surface is twice the thickness of the wafer. The length from the surface of the second wall portion in contact with the one wall portion to the surface of the second wall portion facing the surface of the second wall portion in contact with the first wall portion is in contact with the second wall portion. A half of the length from the surface of the second wall portion to the predetermined one side surface of the flat plate portion including the side opposite to the predetermined one side of the flat plate portion provided at the edge of the first wall portion; Two joining jigs, wherein one main surface of the wafer is brought into contact with one main surface of the flat plate portion, and the side surface of the first wall portion is in contact with one predetermined side surface of the wafer. Each wafer is mounted on each bonding jig so that the side surfaces of the second wall portion of the pair are in contact with two other predetermined side surfaces of the wafer, and after irradiating the light emitted from the excimer irradiation lamp, In a state where the wafer is held on the bonding jig by suction from the opening of the through hole on the other main surface side of the flat plate portion, the surface contacting the first wall portion of the bonding jig on which one wafer is mounted The wafer is mounted such that the surface of the opposing second wall portion is in contact with the surface of the second wall portion facing the surface of the bonding jig on which the other wafer is mounted. Since the bonding jig is arranged, the wafer surfaces irradiated with the light emitted from the excimer irradiation lamp can be easily opposed to each other and brought into contact with each other.
For this reason, according to such a wafer bonding method, it is possible to easily bond a wafer having a rectangular main surface so as not to cause bonding deviation, and to improve productivity after bonding.

Further, according to such a wafer bonding method, the wafer is irradiated with light emitted from the excimer irradiation lamp while the wafer is mounted on the bonding jig, and is sucked from the through hole to hold the wafer on the bonding jig. Since the bonding jig is arranged and the wafer surfaces irradiated with light are bonded and bonded together, the wafers can be bonded without pinching the side surfaces of the wafer with tweezers.
For this reason, according to such a wafer bonding method, it is possible to prevent foreign matters from being mixed between the main surfaces of the wafer being bonded as compared with the conventional wafer bonding method, and production after bonding is performed. Can be improved.
When light is incident in the direction from one wafer to the other toward the other wafer, such a wafer bonding method can suppress the entry of foreign matter compared to the conventional wafer bonding method. Therefore, it is possible to suppress appearance defects due to interference fringes due to the inclusion of foreign matters as compared with the conventional wafer bonding method, and it is possible to improve productivity as compared with the conventional wafer manufacturing method.

(A) is a perspective view which shows an example of the state of the jig for joining used with the bonding method of the wafer which concerns on embodiment of this invention, (b) is used with the bonding method of the wafer which concerns on embodiment of this invention. It is a top view which shows an example of the state of the jig for joining, (c) is sectional drawing which shows an example of the state of the jig for joining used with the bonding method of the wafer which concerns on embodiment of this invention. It is a perspective view which shows an example of the state of the wafer mounting process in the bonding method of the wafer which concerns on embodiment of this invention. It is sectional drawing which shows an example of the state of the irradiation process in the bonding method of the wafer which concerns on embodiment of this invention. It is sectional drawing which shows an example of the state of the jig | tool arrangement | positioning process for joining in the joining method of the wafer which concerns on embodiment of this invention. It is sectional drawing which shows an example of the state of the bonding process in the bonding method of the wafer which concerns on embodiment of this invention. (A) is a perspective view which shows an example of the state of the spacer used with the conventional bonding method of a wafer, (b) is sectional drawing which shows an example of the state of the spacer used with the conventional bonding method of a wafer. It is sectional drawing which shows an example of the state of the irradiation process in the conventional wafer bonding method. It is sectional drawing which shows an example of the state of the wafer arrangement | positioning process in the conventional wafer bonding method.

  Next, the best mode for carrying out the present invention will be described. In each drawing, the state of each component is exaggerated for easy understanding.

In the wafer bonding method according to the embodiment of the present invention, the main surfaces of two wafers whose both main surfaces are rectangular are bonded by direct bonding.
The wafer bonding method according to the embodiment of the present invention includes a wafer mounting process, an irradiation process, a bonding jig arrangement process, a bonding process, and a removing process.

(Wafer mounting process)
As shown in FIG. 2, in the wafer mounting process, both main surfaces are formed in a rectangular shape, and a predetermined hole on one main surface of the flat plate portion 111 in which a through hole 112 is formed from one main surface to the other main surface. A wall portion 113 including a first wall portion 113a and two pairs of second wall portions 113b provided at both ends of the first wall portion 113a is provided at an edge portion along the three sides. One bonding surface of the wafer W is brought into contact with one bonding surface of the flat plate portion 111 and the side surface of the first wall portion 113a is in contact with a predetermined one side surface of the wafer W. However, in the process of mounting each wafer W on the bonding jig 110 so that the side surfaces of the two pairs of the second wall portions 113b are in contact with the other two predetermined side surfaces of the wafer W. is there.

  In the wafer mounting process, for example, two wafers W are used and mounted on the bonding jigs 110 of the respective wafers W.

One wafer W uses, for example, a right quartz crystal having crystal axes composed of an X axis, a Y axis, and a Z axis that are orthogonal to each other, and both main surfaces are rectangular.
Further, one wafer W is, for example, an optical rotation plate in which the leading role is parallel to the X axis and the Y axis and the thickness direction is parallel to the Z axis.

The other wafer W has the same main surface as the main surface of one wafer W.
The other wafer W is, for example, a left crystal having crystal axes composed of an X axis, a Y axis, and a Z axis orthogonal to each other, and both main surfaces are rectangular.
The other wafer W has, for example, a main surface parallel to the X axis and Y axis and a thickness direction parallel to the Z axis.

  As shown in FIGS. 1A, 1 </ b> B, and 1 </ b> C, the joining jig 110 includes a flat plate portion 111 and a wall portion 113.

As shown in FIGS. 1A, 1B, and 1C, the flat plate portion 111 has a through hole 112 formed from one main surface to the other main surface.
Further, as shown in FIGS. 1A, 1B, and 1C, the flat plate portion 111 is provided with a wall portion 113 on one main surface.

As shown in FIG. 1A, FIG. 1B, and FIG. 1C, the wall 113 is provided with a first wall 113a and a second wall 113b.
In addition, the wall 113 has a length from one main surface of the wafer W to which the surface from the surface in contact with the flat plate portion 111 to the surface opposed to this surface is bonded to the other main surface of the wafer W. It is twice as long.

The first wall portion 113 a is provided along an edge of a predetermined side of one main surface of the flat plate portion 111.
The first wall 113a has a rectangular parallelepiped shape in which both main surfaces are rectangular.

As shown in FIG. 1A, FIG. 1B, and FIG. 1C, the second wall 113b is provided in two pairs.
Further, as shown in FIGS. 1A and 1B, the second wall 113b is formed on two other predetermined sides connected to a predetermined one side of one main surface of the flat plate portion 111. It is provided along. Accordingly, the second wall 113b is provided at both ends of the first wall 113a as shown in FIGS. 1 (a) and 1 (b).
The second wall 113b has a rectangular parallelepiped shape in which both main surfaces are rectangular.

  Therefore, as shown in FIGS. 1A and 1B, the joining jig 110 has the second wall 113b at both ends of the first wall 113a when one main surface is viewed. A wall 113, which is provided and has a U-shape of Katakana when viewed from one main surface, is provided along predetermined three side edges of one main surface of the flat plate portion.

  Further, as shown in FIG. 2, the joining jig 110 has a second one of the other second wall 113b from a surface facing the other second wall 113b of the one second wall 113b. The length to the surface facing the wall portion 113b is the same as the length of a predetermined side of the wafer W.

Further, as shown in FIG. 2, the joining jig 110 includes a predetermined other side from the surface of the first wall portion 113 a in contact with the second wall portion 113 b to one main surface of the flat plate portion 111. The length to the side surface is the same as the length of the predetermined other side connected to the predetermined side of the wafer W.
That is, the joining jig 110 is parallel to the first wall 113a and the second wall 113a from the side of the first wall 113a in contact with the flat plate portion 111 and the two second walls 113b. The length to the side of the flat plate part 111 that is not in contact with the wall 113b is the same as the length of the other predetermined side connected to the predetermined one side of the wafer W.

Further, the joining jig 110 has a length from the surface of the second wall portion 113b that is in contact with the first wall portion 113a to the surface of the second wall portion 113b that faces this surface. The surface of the first wall 113a in contact with the portion 113b is opposed to the side surface including a predetermined side of one main surface of the flat plate portion 111 where the first wall 113a is provided along the edge. The length of the flat plate portion 111 is half the length to the side surface.
In other words, the joining jig 110 has a second wall that is parallel to this side and is in contact with the flat plate portion 111 from the side of the first wall portion 113a that is in contact with the flat plate portion 111 and the two second wall portions 113b. The length of the side to the portion 113b is parallel to this side from the side of the first wall portion 113a in contact with the flat plate portion 111 and the two second wall portions 113b, and the first wall portion 113a and the first wall portion 113b The length is half of the length to the side of the flat plate portion 111 that is not in contact with the second wall portion 113b.

  The bonding jig 110 contacts a predetermined one side surface of the wafer W with the surface of the first wall portion 113a in a state where the one main surface of the wafer W is in contact with one main surface of the flat plate portion 111. When the two side surfaces in contact with the predetermined one side surface of the wafer W are brought into contact with the side surfaces of the second wall portion 113b, the side surface of the wafer W facing the predetermined one side surface of the wafer W is It is located on the same plane as the side surface including one other predetermined side of one main surface of the flat plate portion 111.

Here, the length from the surface of the second wall portion 113b in contact with the first wall portion 113a to the surface of the second wall portion 113b facing this surface is defined as a first distance L1.
Further, a predetermined one side of one main surface of the flat plate portion 111 in which the first wall portion 113a is provided along the edge from the surface of the second wall portion 113b in contact with the first wall portion 113a. The length to the side surface of the flat plate portion 111 facing the side surface including the second distance L2.

That is, the joining jig 110 faces one second wall 113b side of the other second wall 113b from the surface facing the other second wall 113b side of the one second wall 113b. The length to the surface is the same as the length of a predetermined side of the wafer W.
The bonding jig 110 has a second distance L2 that is the same length as the other predetermined side connected to the predetermined side of the wafer W.
In the joining jig 110, the first distance L1 is half the second distance L2.

In the wafer mounting process, the second wall facing the side surface of the first wall portion 113a and the adjacent second wall portion 113b while one main surface of the flat plate portion 111 and one main surface of the wafer W are in contact with each other. Each wafer W is mounted on each bonding jig 110 such that the side surface of the portion 113b contacts three predetermined side surfaces of the wafer.
At this time, the side surface of the wafer W facing the predetermined one side surface of the wafer W is positioned on the same plane as the side surface including the predetermined other side of one main surface of the flat plate portion 111.

(Irradiation process)
In the irradiation process, as shown in FIG. 3, the excimer irradiation lamp 120 radiated on the surface of the wafer W opposite to the surface of the wafer W mounted on the bonding jig 110 in contact with the flat plate portion 111. This is a step of irradiating light.
In the irradiation process, the light emitted from the excimer irradiation lamp 120 is irradiated onto the wafer W, whereby the oxide film, adsorbed matter, and contaminants on the surface of the wafer W are removed, and the surface of the wafer W is activated.

(Jig placement process for joining)
As shown in FIG. 4, the bonding jig placement step includes the step of placing the main surface of the wafer W on the other main surface side so that the one main surface of the wafer W remains in contact with the flat plate portion of the wafer W. A surface in contact with the first wall 113a of the bonding jig 110 on which one of the wafers W is mounted in a state where the wafer W is sucked from the opening of the through hole 112 and held in the bonding jig 110. The surface of the second wall portion 113b facing the first wall portion 113b of the bonding jig 110 on which the other wafer W is mounted is opposed to the surface of the second wall portion 113b facing the surface of the second wall portion 113b. In this step, the bonding jig 110 on which the wafer W is mounted is arranged so as to be in contact with the surface.

  Here, the bonding jig 110 on which one wafer W is mounted is referred to as a first bonding jig, and the bonding jig 110 on which the other wafer W is mounted is referred to as a second bonding jig.

In the bonding jig arrangement step, paying attention to the first bonding jig, one wafer W is sucked by suction means (not shown) from the opening of the through hole 112 on the other main surface side of the flat plate portion 111. It is held on one main surface side of the flat plate portion 111 of the first joining jig.
Further, in the bonding jig arrangement step, focusing on the second bonding jig, the other wafer W is sucked by suction means (not shown) from the opening of the through hole 112 on the other main surface of the flat plate portion 111. Is held on one main surface side of the flat plate portion 111 of the second joining jig.

Thereafter, in the bonding jig placement step, as shown in FIG. 4, the surface of the second wall 113 b of the first bonding jig is held with the respective wafers W held in the respective bonding jigs 110. The surface opposite to the surface in contact with the first wall 111a is the surface of the second wall 113b of the second joining jig and is in contact with the surface opposite to the surface in contact with the first wall 111a. In addition, a first joining jig and a second joining jig are arranged.
Further, in the bonding jig arrangement step, as shown in FIG. 4, the side surface of the first wall portion 113 a in contact with the predetermined one side of the wafer W of the first bonding jig is the predetermined other side of the wafer W. The side surface of the flat plate portion 111 of the first bonding jig which is on the same plane as the other predetermined side of the wafer W, while being in contact with the side surface of the flat plate portion 111 of the second bonding jig which is on the same plane. The first bonding jig and the second bonding jig are arranged so as to come into contact with the side surface of the first wall 113a in contact with a predetermined one side of the wafer W of the second bonding jig.

In the bonding jig arrangement step, as shown in FIG. 4, the side surface of the wafer W mounted on the bonding jig 110 and facing the surface in contact with the first wall portion 113a is a flat plate portion. 111. The wafer is positioned on the same plane as the side surface of the flat plate portion 111 including the side opposite to the side on which the first wall portion 113a is provided along the edge portion. This is performed in a state where W is mounted and held on the joining jig 110.
In the joining jig arrangement step, a joining jig in which the first distance L1 of the joining jig 110 is half the second distance L2 of the joining jig 110 is used.
Therefore, in the joining jig arrangement step, as shown in FIG. 4, the surface of the first joining jig that faces the surface of the second wall 113b that is in contact with the first wall 111a is the first. The first joining jig and the second joining jig are brought into contact with the surface of the second wall 113b of the second joining jig that faces the surface in contact with the first wall 111a. By arranging, the side surface of the first wall 113a in contact with the predetermined one side of the wafer W of the first bonding jig is on the same plane as the predetermined other side of the wafer W. The side surface of the flat plate portion 111 of the first bonding jig that is in the same plane as another predetermined side of the wafer W is in contact with the side surface of the flat plate portion 111 of the jig. It can arrange | position easily so that it may contact with the side surface of the 1st wall part 113a which is in contact with one side.
Therefore, in the bonding jig arrangement step, the surface of one wafer W irradiated with light from the excimer irradiation lamp 120 and activated and the surface of the other wafer W irradiated with the excimer irradiation lamp 120 and activated are formed. It can be easily arranged to face each other.

(Lamination process)
As shown in FIG. 5, the bonding process is a process of bonding the wafer W by bringing the wafers W held by the two bonding jigs 110 arranged into contact with each other.
In the bonding step, the activated main surface of one wafer W and the activated main surface of the other wafer W are brought into contact with each other so that the one wafer W and the other wafer W are directly connected. Joined by joining.

(Removal process)
The removal process is a process of removing the wafer W bonded from the bonding jig 110.

According to such a wafer bonding method according to the embodiment of the present invention, the first wall portion 113a and the two pairs of second wall portions 113b provided at both ends of the first wall portion 113a. The wall portion 113 is formed on the edge portion along the predetermined three sides of one main surface of the flat plate portion 111 in which the through hole 112 is formed from one main surface to the other main surface. The thickness is twice the thickness of the wafer W, and the surface of the second wall 113b in contact with the first wall 113a is opposed to the surface of the second wall 113b in contact with the first wall 113a. The predetermined length of the flat plate portion 111 in which the first wall portion 113a is provided at the edge from the surface of the second wall portion 113b whose length to the surface of the second wall portion 113b is in contact with the second wall portion 113b. The length to one predetermined side surface of the flat plate part 111 including the side opposite to one side A bonding jig 110 which is a half of the wafer W, one main surface of the wafer W is brought into contact with one main surface of the flat plate portion 111, and a side surface of the first wall portion 113 a is a predetermined one of the wafers W. Each wafer W is mounted on each bonding jig 110 so that the side surfaces of the two pairs of second walls 113b are in contact with the predetermined other two side surfaces of the wafer W while being in contact with the side surfaces, and excimer irradiation is performed. After irradiating the light radiated from the lamp 120, one wafer W is sucked from the opening of the through hole 112 on the other main surface side of the flat plate portion 111 and held in the bonding jig 110. The surface of the second wall 113b opposite to the surface in contact with the first wall 113a of the mounted bonding jig 110 is the first wall 113a of the bonding jig 110 on which the other wafer W is mounted. The second facing the surface that touches Since the bonding jig 110 on which the wafer W is mounted is disposed so as to be in contact with the surface of the portion 113b, the surfaces of the wafer W irradiated with light emitted from the excimer irradiation lamp 12- are easily opposed to each other. Can be contacted.
For this reason, according to the wafer bonding method according to the embodiment of the present invention, the wafer W having a rectangular main surface can be easily bonded without causing bonding deviation, and productivity after bonding can be improved. Can be improved.

Further, according to the wafer bonding method according to the embodiment of the present invention, the wafer W is irradiated with the light emitted from the excimer irradiation lamp 120 in a state where the wafer W is mounted on the bonding jig 110, and the through hole is formed. The wafer W is sucked from 112, held in the bonding jig 110, the bonding jig 110 is disposed, and the surfaces of the wafer W irradiated with light are bonded and bonded together. The wafer W can be bonded without any problem.
For this reason, according to the wafer bonding method according to such an embodiment of the present invention, it is possible to suppress foreign matters from being mixed between the main surfaces of the wafer W being bonded as compared with the conventional wafer bonding method. And productivity after bonding can be improved.
When light is incident from one bonded wafer W to the other wafer W, the wafer bonding method according to the embodiment of the present invention is compared with the conventional wafer W bonding method. As a result, it is possible to suppress the contamination of foreign matter, so that the appearance defect due to interference fringes can be suppressed due to the contamination of foreign matter compared to the conventional wafer bonding method, and the productivity is improved compared to the conventional wafer manufacturing method. Can be improved.

  In addition, according to such wafer bonding according to the embodiment of the present invention, the main surface of one wafer is rotated in-plane at an angle of 180 degrees on one main surface of the flat plate portion 111, Since the main surface of the wafer and the main surface of the other wafer are bonded to each other, bonding can be performed even if both main surfaces of the wafer W are rectangular.

  In addition, although the case where one through hole is provided in the flat plate portion has been described, the wafer is sucked from the opening portion of the through hole on the other main surface side of the flat plate portion by using a suction means, and one of the flat plate portions. A plurality of through holes may be formed as long as they can be held on the main surface.

  Although the case where the optical rotatory plate made of the right crystal and the optical rotatory plate made of the left crystal are joined is described, for example, if the main surface of the wafer is joined by direct joining, a wavelength plate may be bonded.

  Moreover, although the case where the wafer is made of quartz has been described, glass may be used as long as the main surfaces of the wafer are bonded directly.

  Further, although the case where two wafers are bonded is described, for example, the bonded wafers may be regarded as one wafer and the bonded wafers may be further bonded.

110 Joining jig 111 Flat plate portion 112 Through-hole 113 Column portion 120 Excimer irradiation lamp W Wafer 210 Spacer 211 First recess space 212 Second recess space

Claims (1)

A wafer bonding method for bonding the main surfaces of two wafers each having a rectangular main surface,
The first wall portion is formed on an edge portion along predetermined three sides of one main surface of the flat plate portion in which both main surfaces are formed in a rectangular shape and through holes are formed from one main surface to the other main surface. A wall portion composed of two pairs of second wall portions provided at both ends of the first wall portion is provided, and the wall portion is in contact with the flat plate portion from a surface in contact with the flat plate portion. The length to the surface of the opposing wall portion is twice the length from one main surface of the wafer to the other main surface of the wafer, and is in contact with the first wall portion The length from the surface of the second wall portion to the surface of the second wall portion facing the surface of the second wall portion in contact with the first wall portion is in contact with the first wall portion. A predetermined one of the flat plate portions including a side facing the predetermined one side of the flat plate portion provided on the edge from the surface of the second wall portion; First joining jig and the second joining jig of which is half the length to the surface, the contacting the one main surface of one of the the main surface wafer of the flat plate portion, the first The first bonding is performed such that the side surfaces of the wall portions are in contact with the predetermined one side surface of the wafer and the side surfaces of the two pairs of the second wall portions are in contact with the other two predetermined side surfaces of the wafer. A wafer mounting step of mounting one wafer on a jig for mounting and mounting the other wafer on a second bonding jig ;
Irradiation for irradiating light emitted from an excimer irradiation lamp onto the surface of the wafer that faces the surface of the wafer that is mounted on the first bonding jig and the second bonding jig in contact with the flat plate portion. Process,
The wafer is sucked from the opening of the through hole on the other main surface side of the flat plate portion so that one main surface of the wafer remains in contact with the flat plate portion of the wafer . A side surface of the first wall portion that is in contact with a predetermined side of the one wafer of the first bonding jig in a state of being held by the jig and the second bonding jig is a predetermined value of the other wafer. The first bonding jig that is in the same plane as the predetermined other side of the one wafer while contacting the side surface of the flat plate portion of the second bonding jig that is in the same plane as the other side And the second bonding jig and the second jig so that the side surface of the flat plate portion is in contact with the side surface of the first wall portion in contact with the predetermined one side of the other wafer of the second bonding jig. A joining jig placement step of placing a joining jig of
Contacting the placed the first said other wafer held with the one wafer held by the joining jig to the second bonding jig of bonding the other wafer and the one wafer A pasting process for matching,
Method of bonding wafers, characterized in that it comprises a, and removal step of removing said wafer bonded from the first joining jig and the second joining jig of.

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