JP5791080B2 - Method for producing wiring board for gene analysis - Google Patents

Description

  The present invention relates to a method for producing a wiring board for gene analysis used for analyzing a gene.

  In recent years, techniques for analyzing genes have made rapid progress. Among such techniques for analyzing genes, gene analysis methods using nanopores are attracting attention. This gene analysis method using nanopores detects a change in current when a gene passes through a nanopore that is a pore having a size slightly larger than that of a gene molecule, and reads the base sequence of the gene.

  An example of a wiring board for gene analysis used for such gene analysis is shown in FIG. As shown in FIG. 7, in the conventional wiring board for gene analysis 200, build-up insulating layers 22 and 23 are sequentially laminated on the upper and lower surfaces of the core insulating plate 21. A plurality of through holes 24 are formed in the insulating plate 21, and a core conductor layer 25 is attached to the upper and lower surfaces of the insulating substrate 21 and the through holes 24. A plurality of via holes 26 are formed in the insulating layer 22, and a buildup conductor layer 27 is deposited on the surface of the insulating layer 22 and in the via holes 26. A part of the conductor layer 27 on the upper surface side forms a detection electrode 28. The detection electrode 28 is for detecting a current generated corresponding to the base sequence of the gene. Another part of the conductor layer 27 forms an external connection terminal 29. The external connection terminal 29 is for electrically connecting the detection electrode 28 to an external analysis device. The insulating layer 23 on the upper surface side has an opening 30 that exposes the center of the upper surface of the detection electrode 28. A detection recess C is formed by the inner surface of the opening 30 and the upper surface of the detection electrode 28. Furthermore, the insulating layer 23 has an opening 31 through which the external connection terminal 29 is exposed.

  Then, as shown in FIG. 8, a thin film M having nanopores P is deposited so as to cover the detection recesses C, and the current generated according to the base sequence when the gene G passes through the nanopores P The base sequence of the gene G can be specified by detecting with the detection electrode 28 and analyzing the current with an external analyzer.

  However, in such a wiring board for gene analysis 200, the film M covering the detection recess C is thin and easily damaged. Further, in order to increase the detection sensitivity of the current generated according to the base sequence when the gene G passes through the nanopore P, it is required that the capacitance by the membrane M is small.

  Therefore, while keeping the inner diameter of the lower part of the detection concave part C as it is and reducing the opening diameter of the upper part of the detection concave part C, the risk of breakage of the film M is reduced and the capacitance by the film M is reduced. It can be considered.

US Publication No. 2011/0120890

  An object of the present invention is to provide a method for producing a wiring board for gene analysis suitable for use in a gene analysis method using nanopores.

  The method for producing a wiring board for gene analysis of the present invention comprises a step of forming a detection electrode on a first insulating layer, and a step of forming the first insulating layer on the first insulating layer and the detection electrode. A negative photosensitive resin layer having a lower layer region from the upper surface to a height exceeding the detection electrode and an upper layer region from the lower layer region to the surface is deposited, and a second photosensitive resin layer is formed on the detection electrode in the lower layer region. A first unexposed portion having a diameter of 1 and a second unexposed portion having a second diameter smaller than the first diameter remain on the first unexposed portion in the upper layer region, and Exposing the first unexposed area in the lower layer area and the second unexposed area in the upper area to be exposed; and developing and removing the first and second unexposed areas. Together with the exposed lower region Curing the upper region and, on the detection electrode by performing, it is characterized in that the inner diameter of the lower region the inner diameter is large and the upper region in the form of small detection recess.

  According to the method for manufacturing a wiring board for gene analysis of the present invention, a lower layer region from the upper surface of the first insulating layer to a height exceeding the detection electrode on the first insulating layer and the detection electrode, and the lower layer region A negative photosensitive resin layer having an upper layer region from the top to the surface is deposited, and a first unexposed portion having a first diameter on the detection electrode in the lower layer region and a first unexposed region in the upper layer region A second unexposed portion having a second diameter smaller than the first diameter remains on the exposed portion, and the periphery of the first unexposed portion in the lower layer region and the periphery of the second unexposed portion in the upper layer region Is exposed to light, and then the first and second unexposed portions are developed and removed, and the exposed lower layer region and upper layer region are cured to increase the inner diameter of the lower region on the detection electrode, And upper territory Inside diameter from forming a small detection recess can opening is satisfactorily formed on the detection electrode a small detection recess inside a wide shape in. As a result, there is a low risk of breakage in the membrane having nanopores arranged on the detection recesses, and the capacitance by the membrane can be reduced, thereby being used in gene analysis methods using nanopores. Therefore, it is possible to provide a method for producing a wiring board for gene analysis suitable for the above.

FIG. 1 is a schematic cross-sectional view showing an example of a wiring board for gene analysis manufactured according to the present invention. 2 is a top view of the wiring board for gene analysis shown in FIG. FIG. 3 is an enlarged schematic cross-sectional view of the main part of the wiring board for gene analysis shown in FIG. FIG. 4 is a schematic sectional view for each step for explaining the present invention. FIG. 5 is a schematic sectional view for each process for explaining another example of the present invention. FIG. 6 is a schematic cross-sectional view for each process for explaining still another example of the present invention. FIG. 7 is a schematic cross-sectional view showing a conventional wiring board for gene analysis. FIG. 8 is an enlarged schematic cross-sectional view of the relevant part of the wiring board for gene analysis shown in FIG.

  Next, the present invention will be described with reference to FIGS. FIG. 1 shows a wiring board 100 for gene analysis manufactured according to the present invention. The gene analysis wiring board 100 is formed by sequentially laminating an insulating layer 2 and an insulating layer 3 on the upper and lower surfaces of a core insulating plate 1.

  The insulating plate 1 is made of, for example, an electrically insulating material obtained by impregnating a glass cloth obtained by weaving glass fiber bundles vertically and horizontally with a thermosetting resin such as a bismaleimide triazine resin or an epoxy resin. The thickness of the insulating plate 1 is about 100 to 1000 μm. A through hole 4 having a diameter of about 100 to 300 μm is formed from the upper surface to the lower surface of the insulating plate 1.

  A core conductor layer 5 is attached to the upper and lower surfaces of the insulating plate 1 and the inner wall of the through hole 4. The conductor layer 5 is made of a highly conductive metal material such as a copper foil having a thickness of about 5 to 25 μm or a copper plating layer. Further, the inside of the through hole 4 to which the conductor layer 5 is deposited is filled with a hole filling resin 6 made of a thermosetting resin such as an epoxy resin.

  Such an insulating plate 1 and the conductor layer 5 are formed as follows. First, a double-sided copper-clad plate is prepared in which a copper foil having a thickness of about 5 to 35 μm is deposited on the upper and lower surfaces of a resin plate obtained by impregnating a glass cloth with a thermosetting resin. Next, the through-hole 4 is drilled in the double-sided copper-clad plate by drilling or laser processing. Next, after desmearing the inside of the through hole 4, an electroless copper plating layer and an electrolytic copper plating layer are sequentially deposited in the through hole 4 and the upper and lower copper foil surfaces. The thickness of the electroless copper plating layer is about 0.1 to 1 μm, and the thickness of the electrolytic copper plating layer is about 5 to 25 μm. Next, a hole-filling resin 6 is filled in the through hole 4 provided with the electrolytic copper plating layer. The filling of the hole filling resin 6 is performed by filling the through hole 4 with a paste-like thermosetting resin by a screen printing method and then thermosetting it. The filled hole filling resin 6 is flattened by polishing the upper and lower ends thereof together with the upper and lower copper plating layers. Next, an electroless copper plating layer and an electrolytic copper plating layer are sequentially deposited on the upper and lower end surfaces and the upper and lower copper plating layers of the planarized hole filling resin 6. The thickness of the electroless copper plating layer is about 0.1 to 1 μm, and the thickness of the electrolytic copper plating layer is about 5 to 25 μm. Finally, the copper foil and the copper plating layer thereon are patterned by a known subtractive method to form the conductor layer 5.

  The insulating layer 2 is made of an insulating material containing a thermosetting resin such as an epoxy resin. The insulating layer 2 has a thickness of about 30 to 50 μm, and via holes 7 having a diameter of about 50 to 100 μm are formed from the upper surface to the lower surface of the insulating layer 2. Such an insulating layer 2 is formed as follows, for example. First, a thermosetting resin film is laminated on the upper and lower surfaces of the insulating plate 1 on which the conductor layer 5 is deposited. A vacuum press is used for lamination. The resin film contains an uncured thermosetting resin component and an inorganic insulating filler. Finally, after thermally curing the resin film, the insulating layer 2 is formed by drilling the via hole 7 by laser processing from the surface. In addition, after drilling the via hole 7, a desmear process or a soft etching process is performed as needed.

  A conductor layer 8 is deposited on the surface of the insulating layer 2 and in the via hole 7. The conductor layer 8 is made of a copper plating layer having a thickness of about 5 to 25 μm. A part of the conductor layer 8 forms a detection electrode 9 for detecting a current corresponding to the base sequence of the gene on the surface of the insulating layer 2 on the upper surface side. The detection electrodes 9 have a circular shape with a diameter of about 50 to 200 μm, and are arranged in a matrix as shown in FIG. The arrangement pitch of the detection electrodes 9 is about 100 to 300 μm. Further, a part of the conductor layer 8 forms an external connection terminal 10 connected to an external analyzer on the surfaces of both the upper and lower insulating layers 2. These detection electrodes 9 and external connection terminals 10 are electrically connected to each other via conductor layers 5 and 8.

  Such a conductor layer 8 is formed as follows. First, an electroless copper plating layer is deposited on the surface of the insulating layer 2 and the via hole 7. The thickness of the electroless copper plating layer is about 0.1 to 1 μm. Next, a plating resist layer having an opening corresponding to the pattern of the conductor layer 8 is deposited on the electroless copper plating layer. The plating resist layer is formed by adhering a photosensitive resin film for resist on the electroless copper plating layer, and using a well-known photolithography technique to expose and develop a predetermined pattern. Next, an electrolytic copper plating layer is deposited on the electroless copper plating layer exposed in the opening of the plating resist layer. The thickness of the electrolytic copper plating layer is about 5 to 25 μm. Finally, after the plating resist layer is peeled and removed, the electroless copper plating layer exposed from the electrolytic copper plating layer is removed by etching to form the conductor layer 8.

  The insulating layer 3 is made of the same electrical insulating material as the insulating layer 2 or a different insulating material. The thickness of the insulating layer 3 is about 20 to 140 μm on the detection electrode 9. An opening 11 is formed in the insulating layer 3 on the center of the upper surface of the detection electrode 9. A detection recess C is formed by the inner surface of the opening 11 and the upper surface of the detection electrode 9. Further, the insulating layer 3 is formed with a window portion 12 through which the external connection terminal 10 is exposed. The window portion 12 is formed in a size sufficient to expose the external connection terminal 10.

  Such an insulating layer 3 is formed as follows. First, a photosensitive thermosetting resin layer is laminated on the surface of the insulating layer 2 to which the conductor layer 8 is applied. The lamination includes a method of applying a resin paste and drying it, and a method of attaching a resin film using a vacuum press. Next, the laminated photosensitive resin layer is subjected to exposure and development processing so as to have the opening 11 and the window 12 by adopting a photolithography technique, and finally, the insulating layer is obtained by thermosetting the resin layer. 3 is formed. The method for forming the opening 11 will be described later in detail.

  By the way, in the wiring board for gene analysis 100 according to the present invention, the insulating layer 3 for forming the detecting recess C is formed from the upper surface of the insulating layer 2 as shown in FIG. It has two regions, a lower layer region 3a up to a height exceeding the electrode 9 and an upper layer region 3b from the lower layer region 3a to the surface. The detection recess C includes a large-diameter portion 11a in the lower layer region 3a and a small-diameter portion 11b in the upper layer region 3b. The thickness of the lower layer region 3a is about 10 to 70 μm on the detection electrode 9, and the thickness of the upper layer region 3b is about 10 to 70 μm. The large diameter portion 11a has a substantially cylindrical shape with a diameter of about 50 to 150 μm, and the small diameter portion 11b has a substantially cylindrical shape with a diameter of about 5 to 100 μm. In addition, the diameter of the large diameter part 11a is about 20-100 micrometers larger than the diameter of the small diameter part 11b. A membrane M made of a lipid bilayer is deposited on the insulating layer 3 so as to cover the detection recess C. On the membrane M, nanopores P are formed. The nanopore P is a hole having a minute diameter that allows a single gene G to pass through. When the gene G passes through the nanopore P, a current generated according to the base sequence of the gene G is detected by the detection electrode 9 and the current is analyzed by an external analyzer connected to the external connection terminal 10. Thus, the base sequence of gene G can be specified. The connection between the external connection terminal 10 and the external analysis device is performed by providing a socket corresponding to the external connection terminal 10 in the external analysis device and inserting the end portion on which the external connection terminal 10 is formed into the socket. It is.

  Thus, according to the wiring board 100 for gene analysis by this invention, the recessed part C for a detection is provided with the large diameter part 11a in the lower layer area | region 3a, and the small diameter part 11b in the upper layer area | region 3b, This small diameter part 11b is formed. Since the film M is deposited on the upper layer region 3b, the area of the film M covering the opening of the detection recess C becomes small, so that the risk of breakage in the film M can be reduced, and the static due to the film M can be reduced. The electric capacity can be reduced.

  In the wiring board for gene analysis of this example, the plating metal layer 13 is deposited on the surface of the detection electrode 9. The plating metal layer 13 is composed of a composite plating layer in which, for example, a nickel plating layer having a thickness of 2 to 10 μm and a gold plating layer having a thickness of 0.02 to 0.1 μm are sequentially deposited. Is formed. By having such a plated metal layer 13, copper ions are effectively prevented from eluting from the detection electrode 9 into the detection recess C. When copper ions elute in the detection recess C, it is difficult to accurately detect the current generated according to the base sequence when the gene G passes through the nanopore P.

  Next, the manufacturing method of the wiring board for gene analysis of this invention is demonstrated. First, as shown in FIG. 4A, the detection electrode 9 is formed on the upper surface of the insulating layer 2. A plating metal layer 13 made of a nickel plating layer and a gold plating layer is deposited on the surface of the detection electrode 9.

  Next, as shown in FIG. 4B, a negative photosensitive resin layer 3 </ b> P is deposited on the insulating layer 2 and the detection electrode 9. Such a photosensitive resin layer 3P is formed by applying a photosensitive resin paste on the insulating layer 2 and the detection electrode 9 by screen printing. Alternatively, the photosensitive resin layer 3 </ b> P is formed by thermocompression bonding a photosensitive resin film on the insulating layer 2 and the detection electrode 9. The thickness of the photosensitive resin layer 3P is about 20 to 140 μm on the detection electrode 9.

  Next, as shown in FIG. 4C, the first exposure mask M1 is disposed on the photosensitive resin layer 3P, and the photosensitive resin layer 3P is exposed by irradiating ultraviolet rays from above. The first exposure mask M1 has a circular light shielding pattern P1 having a diameter of about 50 to 150 μm at a position corresponding to the center of the upper surface of the detection electrode 9. Therefore, the photosensitive resin layer 3P immediately below the light shielding pattern P1 remains as an unexposed portion N1 with a diameter of 50 to 150 μm by exposure, and the periphery thereof is exposed. At this time, exposure is performed so that the photosensitive resin layer 3P around the unexposed portion N1 is sufficiently exposed from its surface to its lower surface. Instead of using the exposure mask M1, exposure may be performed by directly irradiating the photosensitive resin layer 3P with an ultraviolet laser using a direct image exposure apparatus.

  Next, as shown in FIG. 4D, a second exposure mask M2 is disposed on the photosensitive resin layer 3P, and the photosensitive resin layer 3P is exposed by irradiating ultraviolet rays from above. The second exposure mask M2 has a circular light shielding pattern P2 having a diameter of about 5 to 100 μm at a position corresponding to the center of the upper surface of the unexposed portion N1. The diameter of the light shielding pattern P2 is set to be about 20 to 100 μm smaller than the diameter of the light shielding pattern P1 described above. Therefore, the photosensitive resin layer 3P immediately below the light shielding pattern P2 remains as an uncured portion N2 by exposure, and the periphery thereof is exposed. At this time, the photosensitive resin layer 3P around the unexposed portion N2 is exposed to a thickness of 10 to 70 μm from the surface and exposed from the upper surface of the detection electrode 9 so as to remain unexposed by a thickness of 10 to 70 μm. . Such exposure can be realized by reducing the amount of irradiated ultraviolet light or shortening the irradiation time of ultraviolet light. Accordingly, the unexposed portion N1 having a diameter of 50 to 150 μm on the detection electrode 9 up to a position 10 to 70 μm higher than the upper surface of the detection electrode 9 and the periphery thereof is exposed, and the unexposed portion N1 An upper layer region 3b having an unexposed portion N2 having a diameter of 5 to 100 μm and a periphery thereof being exposed is formed.

  Next, as shown in FIG. 4E, the unexposed portions N1 and N2 are removed by development. For the development, a method using an alkaline developer is employed. Thereafter, the remaining photosensitive resin layer 3P is thermally cured to form the insulating layer 3 in which the detection recess C having the large diameter portion 11a in the lower layer region 3a and the small diameter portion 11b in the upper layer region 3b is formed. The

  Thus, according to the present invention, it is possible to satisfactorily form a detection recess having a shape with a small opening and a wide inside on the detection electrode. As a result, there is a low risk of breakage in the membrane having nanopores arranged on the detection recesses, and the capacitance by the membrane can be reduced, thereby being used in gene analysis methods using nanopores. Therefore, it is possible to provide a method for producing a wiring board for gene analysis suitable for the above.

  In addition, this invention is not limited to the above-mentioned embodiment example, A various change is possible if it is a range which does not deviate from the summary of this invention. For example, in the above-described example, the insulating layer 3 is formed by exposing and developing one photosensitive resin layer 3P. However, the insulating layer 3 is formed by exposing and developing two photosensitive resins. May be. Such an example is shown below.

  First, a photosensitive resin layer 3P having an unexposed portion N1 is formed through the same steps as those described based on FIGS. 4 (a) to 4 (c). The diameter of the unexposed portion N1 is set to about 50 to 150 μm as in the above example. In addition, the thickness of the photosensitive resin layer 3P is thinner than the above example, and is set to about 10 to 70 μm on the detection electrode 9.

  Next, as shown in FIG. 5D, a negative second photosensitive resin layer 3bP is deposited on the photosensitive resin layer 3P. The second photosensitive resin layer 3bP is made of the same material as that of the photosensitive resin layer 3P, and is applied by the same method as that of the photosensitive resin layer 3P. The thickness of the second photosensitive resin layer 3bP is about 10 to 70 μm.

  Next, as shown in FIG. 5E, a second exposure mask M2 is disposed on the second photosensitive resin layer 3bP, and ultraviolet rays are irradiated from above to expose the second photosensitive resin layer 3bP. To do. Similar to the above example, the second exposure mask M2 has a circular light shielding pattern P2 having a diameter of about 5 to 100 μm at a position corresponding to the center of the upper surface of the unexposed portion N1. The diameter of the light shielding pattern P2 is set to be about 20 to 100 μm smaller than the diameter of the light shielding pattern P1 described above. Accordingly, the second photosensitive resin layer 3bP immediately below the light shielding pattern P2 remains as an uncured portion N2 by exposure, and the periphery thereof is exposed. At this time, the second photosensitive resin layer 3bP around the unexposed portion N2 is exposed by a thickness of 10 to 70 μm from the surface, and the underlying photosensitive resin layer 3P is 10 to 10 from the upper surface of the detection electrode 9. Exposure is performed so that a thickness of 70 μm remains unexposed. Such exposure can be realized by reducing the amount of irradiated ultraviolet light or shortening the irradiation time of ultraviolet light. Accordingly, the unexposed portion N1 having a diameter of 50 to 150 μm on the detection electrode 9 up to a position 10 to 70 μm higher than the upper surface of the detection electrode 9 and the periphery thereof is exposed, and the unexposed portion N1 An upper layer region 3b having an unexposed portion N2 having a diameter of 5 to 100 μm and a periphery thereof being exposed is formed. Instead of using the exposure mask M2, exposure may be performed by directly irradiating the photosensitive resin layer 3bP with an ultraviolet laser using a direct image exposure apparatus.

  Next, as shown in FIG. 5 (f), after the unexposed portions N1 and N2 are removed by development, the remaining photosensitive resin layer 3P and the second photosensitive resin layer 3bP are thermally cured to form a lower layer. The insulating layer 3 is formed in which the detection recess C having the large diameter portion 11a in the region 3a and the small diameter portion 11b in the upper layer region 3b is formed. In this example, the photosensitive resin layer 3P and the second photosensitive resin layer 3bP use the same material, but the wavelength at which the photosensitive resin layer 3P is most exposed and the second photosensitive resin layer 3P are used. The wavelength at which the layer 3bP is most exposed is different, and when the photosensitive resin layer 3P is exposed, the photosensitive resin layer 3P is exposed at the wavelength at which it is most exposed, and the second photosensitive resin layer 3bP is exposed. Sometimes, the second photosensitive resin layer 3bP may be exposed at a wavelength at which it is most exposed. In this case, when the second photosensitive resin layer 3bP which is the upper layer is exposed, the lower photosensitive resin layer 3P can be prevented from being unnecessarily exposed, and the detection recess C having a better shape can be formed. It becomes possible. Examples of wavelengths used for such exposure include 436 nm (g line), 405 nm (h line), and 365 nm (i line) of a high-pressure mercury lamp, and 830 nm, 532 nm, 488 nm, and 405 nm of a semiconductor laser. Alternatively, the photosensitive sensitivity of the photosensitive resin layer 3P may be lower than that of the second photosensitive resin layer 3bP. Also in this case, when the second photosensitive resin layer 3bP which is the upper layer is exposed, the lower photosensitive resin layer 3P is prevented from being unnecessarily exposed to form a detection recess C having a better shape. Is possible.

  Further, the present invention is not limited to the modification in which the insulating layer 3 is formed by exposing and developing two layers of photosensitive resin as in the above-described example, but the insulating layer 3 is formed of three or more layers of photosensitive resin. You may form by performing exposure and image development. Such an example is shown below.

  First, a photosensitive resin layer 3P having an unexposed portion N1 is formed through the same steps as those described based on FIGS. 4 (a) to 4 (c). The diameter of the unexposed portion N1 is set to about 50 to 100 μm, which is smaller than the above example. In addition, the thickness of the photosensitive resin layer 3P is thinner than the above example, and is set to about 10 to 50 μm on the detection electrode 9.

  Next, as shown in FIG. 6D, a negative second photosensitive resin layer 3aP is deposited on the photosensitive resin layer 3P. The second photosensitive resin layer 3aP is made of the same material as that of the photosensitive resin layer 3P, and is applied by the same method as that of the photosensitive resin layer 3P. The thickness of the 2nd photosensitive resin layer 3aP shall be about 10-50 micrometers.

  Next, as shown in FIG. 6E, a second exposure mask M2 is disposed on the second photosensitive resin layer 3aP, and ultraviolet rays are irradiated from above to expose the second photosensitive resin layer 3aP. To do. The second exposure mask M2 has a circular light shielding pattern P2 having a diameter of about 90 to 200 μm at a position covering the unexposed portion N1. The diameter of the light shielding pattern P2 is about 40 to 150 μm larger than the diameter of the light shielding pattern P1 described above. Accordingly, the second photosensitive resin layer 3aP immediately below the light shielding pattern P2 remains as an uncured portion N2 by exposure, and the periphery thereof is exposed.

  Next, as shown in FIG. 6F, a negative third photosensitive resin layer 3bP is deposited on the second photosensitive resin layer 3aP. The third photosensitive resin layer 3bP is made of the same material as that of the photosensitive resin layer 3P or 3aP, and is applied by the same method as that of the photosensitive resin layer 3P or 3aP. The thickness of the 3rd photosensitive resin layer 3bP shall be about 10-70 micrometers.

  Next, as shown in FIG. 6G, a third exposure mask M3 is disposed on the third photosensitive resin layer 3bP, and ultraviolet rays are irradiated from above to expose the third photosensitive resin layer 3bP. To do. Similar to the above example, the third exposure mask M3 has a circular light shielding pattern P3 having a diameter of about 5 to 100 μm at a position corresponding to the center of the upper surface of the unexposed portion N2. The diameter of the light shielding pattern P3 is set to be about 20 to 100 μm smaller than the diameter of the light shielding pattern P2 described above. Therefore, the third photosensitive resin layer 3bP immediately below the light shielding pattern P3 remains as an uncured portion N3 by exposure, and the periphery thereof is exposed. At this time, the third photosensitive resin layer 3bP around the unexposed portion N3 is exposed by a thickness of 10 to 70 μm from the surface and exposed so that the unexposed portions N2 and N1 below the unexposed portion remain unexposed. . Such exposure can be realized by reducing the amount of irradiated ultraviolet light or shortening the irradiation time of ultraviolet light. As a result, the lower lower layer region 3a having the unexposed portions N1 and N2 having a diameter of 50 to 200 μm on the detection electrode 9 from the upper surface of the detection electrode 9 to a high position of 20 to 100 μm and the periphery thereof being exposed. Then, an upper layer region 3b having an unexposed portion N3 having a diameter of 5 to 100 μm on the unexposed portion N2 and the periphery of which is exposed is formed. Instead of exposing using the exposure mask M3, exposure may be performed by directly irradiating the photosensitive resin layers 3aP and 3bP with an ultraviolet laser using a direct image exposure apparatus.

  Next, as shown in FIG. 6 (h), after the unexposed portions N1, N2, and N3 are removed by development, the remaining photosensitive resins 3P, 3aP, and 3bP are thermally cured, whereby a large area in the lower layer region 3a is obtained. The insulating layer 3 in which the detection recess C having the diameter portion 11a and the small diameter portion 11b in the upper layer region 3b is formed is formed. In this example, the photosensitive resin layer 3P, the second photosensitive resin layer 3aP, and the third photosensitive resin layer 3bP are made of the same material, but the photosensitive resin layer 3P and the second photosensitive resin layer 3bP are used. The wavelength at which the photosensitive resin layer 3aP is most exposed is different from the wavelength at which the third photosensitive resin layer 3bP is most exposed, and the photosensitive resin layer 3P and the second photosensitive resin layer 3aP are exposed. Sometimes the photosensitive resin layer 3P and the second photosensitive resin layer 3aP are exposed at the wavelength at which they are most exposed, and when the third photosensitive resin layer 3bP is exposed, the third photosensitive resin layer 3bP is most exposed. You may make it expose with a wavelength. In this case, when exposing the uppermost third photosensitive resin layer 3bP, the lower second photosensitive resin layer 3aP is prevented from being unnecessarily exposed, and a detection recess C having a better shape is formed. It becomes possible to form. Examples of wavelengths used for such exposure include 436 nm (g line), 405 nm (h line), and 365 nm (i line) of a high-pressure mercury lamp, and 830 nm, 532 nm, 488 nm, and 405 nm of a semiconductor laser. Alternatively, the photosensitive sensitivity of the photosensitive resin layer 3P and the second photosensitive resin 3aP may be lower than that of the third photosensitive resin layer 3bP. Also in this case, when the uppermost third photosensitive resin layer 3bP is exposed, the second photosensitive resin layer 3aP is prevented from being unnecessarily exposed to form a detection recess C having a better shape. It becomes possible to do.

  The wiring board for gene analysis of the present invention can also be used for analysis of substances other than genes.

2: First insulating layer 3a: Lower layer region 3b: Upper layer region 3P, 3aP, 3bP: Negative photosensitive resin layer 9: Detection electrode 14: Plating metal C: Detection recess N1, N2, N3: Unexposed Part

Claims (7)

  A step of forming a detection electrode on the first insulating layer, and a lower layer region on the first insulating layer and the detection electrode from the upper surface of the first insulating layer to a height exceeding the detection electrode And a negative photosensitive resin layer having an upper layer region from above the lower region to the surface, and a first unexposed portion having a first diameter on the detection electrode in the lower layer region, and A second unexposed portion having a second diameter smaller than the first diameter remains on the first unexposed portion in the upper layer region, and the periphery of the first unexposed portion in the lower layer region and The step of exposing so that the periphery of the second unexposed portion in the upper layer region is exposed, the first and second unexposed portions are developed and removed, and the exposed lower layer region and upper layer region are cured. And process Wherein on the detection electrode, the manufacturing method of the wiring substrate for genetic analysis, wherein the inner diameter inside diameter in the lower region of the large and the upper layer region to form a small detection recess by the.   In the exposing step, the photosensitive resin layer is composed of two layers of a first photosensitive resin layer that forms the lower layer region and a second photosensitive resin layer that forms the upper layer region, After the first photosensitive resin layer is deposited on the first insulating layer and the detection electrode, the first unexposed portion remains in the first photosensitive resin layer and the first photosensitive resin layer remains. After performing the first exposure so that the periphery of one unexposed portion is exposed, the second photosensitive resin layer is deposited on the first photosensitive resin layer, and then the second photosensitive resin layer is applied. 2. The gene analysis according to claim 1, wherein the second exposure is performed so that the second unexposed portion remains on the photosensitive resin layer and the periphery of the second unexposed portion is exposed to light. A method for manufacturing a wiring board.   The first wavelength at which the first photosensitive resin layer is most exposed is different from the second wavelength at which the second photosensitive resin layer is most exposed, and the first exposure is performed in the first exposure. 3. The method for producing a wiring board for gene analysis according to claim 2, wherein the second exposure is performed at the second wavelength, and the second exposure is performed at the second wavelength.   The method for producing a wiring board for gene analysis according to claim 2 or 3, wherein the exposure sensitivity of the first photosensitive resin layer is lower than the exposure sensitivity of the second photosensitive resin layer.   In the exposing step, the lower layer region is composed of a first photosensitive resin layer on the first insulating layer side and a second photosensitive resin layer on the upper layer region side, and the upper layer region is a first layer. 3 and the first photosensitive resin layer is deposited on the first insulating layer and the detection electrode, and then the first diameter is applied to the first photosensitive resin layer. First exposure is performed so that a third unexposed portion having a smaller third diameter remains and the periphery of the third unexposed portion is exposed, and then the first photosensitive resin layer is subjected to the first exposure. After applying the second photosensitive resin layer, the second exposure is performed so that the first unexposed portion remains in the second photosensitive resin layer and the periphery of the first unexposed portion is exposed. And then depositing a third photosensitive resin layer on the second photosensitive resin layer, and then applying the third photosensitive resin layer to the third photosensitive resin layer. The process according to claim 1 gene analysis wiring board according to the surrounding unexposed portion of the second with the unexposed portions remain to and performing third exposure to exposure of the.   The first wavelength at which the first and second photosensitive resin layers are most exposed is different from the second wavelength at which the third photosensitive resin layer is most exposed, and the first and second wavelengths are different. 6. The method of manufacturing a wiring board for gene analysis according to claim 5, wherein the second exposure is performed at the first wavelength and the third exposure is performed at the second wavelength.   The method for producing a wiring board for gene analysis according to claim 5 or 6, wherein the exposure sensitivity of the first and second photosensitive resin layers is lower than the exposure sensitivity of the third photosensitive resin layer. .

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