JP5791028B2 - 試料を検査する荷電粒子ビーム装置のコントラストを向上させる装置及び方法 - Google Patents
試料を検査する荷電粒子ビーム装置のコントラストを向上させる装置及び方法 Download PDFInfo
- Publication number
- JP5791028B2 JP5791028B2 JP2011183390A JP2011183390A JP5791028B2 JP 5791028 B2 JP5791028 B2 JP 5791028B2 JP 2011183390 A JP2011183390 A JP 2011183390A JP 2011183390 A JP2011183390 A JP 2011183390A JP 5791028 B2 JP5791028 B2 JP 5791028B2
- Authority
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- Japan
- Prior art keywords
- charged particle
- particle beam
- sample
- group
- aperture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002245 particle Substances 0.000 title claims description 168
- 238000000034 method Methods 0.000 title claims description 31
- 230000003287 optical effect Effects 0.000 claims description 33
- 238000000926 separation method Methods 0.000 claims description 19
- 230000005540 biological transmission Effects 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 6
- 239000011163 secondary particle Substances 0.000 claims description 5
- 239000000523 sample Substances 0.000 description 69
- 238000010894 electron beam technology Methods 0.000 description 31
- 238000012986 modification Methods 0.000 description 24
- 230000004048 modification Effects 0.000 description 24
- 238000007689 inspection Methods 0.000 description 9
- 238000012876 topography Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000011164 primary particle Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 101100042265 Caenorhabditis elegans sem-2 gene Proteins 0.000 description 2
- 101100042258 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) sem-1 gene Proteins 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- -1 gallium ions Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2449—Detector devices with moving charges in electric or magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP11162291.6 | 2011-04-13 | ||
| EP11162291.6A EP2511939B1 (en) | 2011-04-13 | 2011-04-13 | Arrangement and method for the contrast improvement in a charged particle beam device for inspecting a specimen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012221942A JP2012221942A (ja) | 2012-11-12 |
| JP2012221942A5 JP2012221942A5 (enExample) | 2014-10-09 |
| JP5791028B2 true JP5791028B2 (ja) | 2015-10-07 |
Family
ID=44533263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011183390A Expired - Fee Related JP5791028B2 (ja) | 2011-04-13 | 2011-08-25 | 試料を検査する荷電粒子ビーム装置のコントラストを向上させる装置及び方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8530837B2 (enExample) |
| EP (1) | EP2511939B1 (enExample) |
| JP (1) | JP5791028B2 (enExample) |
| TW (1) | TWI488212B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200118756A (ko) * | 2019-04-08 | 2020-10-16 | 주식회사 히타치하이테크 | 패턴 단면 형상 추정 시스템, 및 프로그램 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2879155B1 (en) * | 2013-12-02 | 2018-04-25 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Multi-beam system for high throughput EBI |
| CN106165054B (zh) * | 2014-04-28 | 2018-08-28 | 株式会社日立高新技术 | 电子线装置 |
| JP6689602B2 (ja) | 2014-12-22 | 2020-04-28 | カール ツァイス マイクロスコーピー エルエルシー | 荷電粒子ビームシステム及び方法 |
| EP3253799B1 (en) * | 2015-02-05 | 2020-12-02 | Molecular Templates, Inc. | Multivalent cd20-binding molecules comprising shiga toxin a subunit effector regions and enriched compositions thereof |
| JP2017135218A (ja) * | 2016-01-26 | 2017-08-03 | 株式会社アドバンテスト | 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置 |
| JP6967340B2 (ja) * | 2016-09-13 | 2021-11-17 | 株式会社日立ハイテクサイエンス | 複合ビーム装置 |
| CN107240540A (zh) * | 2017-06-22 | 2017-10-10 | 聚束科技(北京)有限公司 | 一种观察非导电或导电不均匀样品的方法和sem |
| CZ309855B6 (cs) | 2017-09-20 | 2023-12-20 | Tescan Group, A.S. | Zařízení s iontovým tubusem a rastrovacím elektronovým mikroskopem |
| DE102019203579A1 (de) * | 2019-03-15 | 2020-09-17 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betrieb eines Teilchenstrahlgeräts sowie Teilchenstrahlgerät zur Durchführung des Verfahrens |
| DE102019004124B4 (de) | 2019-06-13 | 2024-03-21 | Carl Zeiss Multisem Gmbh | Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System |
| CN115428116A (zh) | 2020-04-10 | 2022-12-02 | Asml荷兰有限公司 | 具有多个检测器的带电粒子束装置和成像方法 |
| CN113035675A (zh) * | 2021-02-26 | 2021-06-25 | 中国科学院生物物理研究所 | 带电粒子束设备 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60189855A (ja) * | 1984-03-12 | 1985-09-27 | Hitachi Ltd | 2次電子検出器 |
| US5644132A (en) | 1994-06-20 | 1997-07-01 | Opan Technologies Ltd. | System for high resolution imaging and measurement of topographic and material features on a specimen |
| DE19980548D2 (de) | 1998-04-01 | 2001-07-12 | Juergen Wolfrum | Verfahren und Vorrichtung zur Quantifizierung von DNA und RNA |
| DE19828476A1 (de) | 1998-06-26 | 1999-12-30 | Leo Elektronenmikroskopie Gmbh | Teilchenstrahlgerät |
| US7135676B2 (en) * | 2000-06-27 | 2006-11-14 | Ebara Corporation | Inspection system by charged particle beam and method of manufacturing devices using the system |
| JP2003331770A (ja) * | 2002-05-15 | 2003-11-21 | Seiko Instruments Inc | 電子線装置 |
| US7138629B2 (en) * | 2003-04-22 | 2006-11-21 | Ebara Corporation | Testing apparatus using charged particles and device manufacturing method using the testing apparatus |
| EP1703537B9 (en) | 2005-03-17 | 2008-10-22 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Analysing system and charged particle beam device |
| EP2219204B1 (en) * | 2009-02-12 | 2012-03-21 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Arrangement and method for the contrast improvement in a charged particle beam device for inspecting a specimen |
-
2011
- 2011-04-13 EP EP11162291.6A patent/EP2511939B1/en active Active
- 2011-07-29 TW TW100127092A patent/TWI488212B/zh not_active IP Right Cessation
- 2011-08-05 US US13/204,528 patent/US8530837B2/en active Active
- 2011-08-25 JP JP2011183390A patent/JP5791028B2/ja not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200118756A (ko) * | 2019-04-08 | 2020-10-16 | 주식회사 히타치하이테크 | 패턴 단면 형상 추정 시스템, 및 프로그램 |
| US11211226B2 (en) | 2019-04-08 | 2021-12-28 | Hitachi High-Tech Corporation | Pattern cross-sectional shape estimation system and program |
| KR102369791B1 (ko) * | 2019-04-08 | 2022-03-03 | 주식회사 히타치하이테크 | 패턴 단면 형상 추정 시스템, 및 프로그램 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8530837B2 (en) | 2013-09-10 |
| EP2511939A1 (en) | 2012-10-17 |
| JP2012221942A (ja) | 2012-11-12 |
| TWI488212B (zh) | 2015-06-11 |
| US20120261573A1 (en) | 2012-10-18 |
| EP2511939B1 (en) | 2016-03-23 |
| TW201241864A (en) | 2012-10-16 |
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