JP5773153B2 - 電子装置およびその製造方法、並びに発振器 - Google Patents
電子装置およびその製造方法、並びに発振器 Download PDFInfo
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- JP5773153B2 JP5773153B2 JP2011182711A JP2011182711A JP5773153B2 JP 5773153 B2 JP5773153 B2 JP 5773153B2 JP 2011182711 A JP2011182711 A JP 2011182711A JP 2011182711 A JP2011182711 A JP 2011182711A JP 5773153 B2 JP5773153 B2 JP 5773153B2
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- 230000015572 biosynthetic process Effects 0.000 description 21
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- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
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- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
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Images
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- Oscillators With Electromechanical Resonators (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011182711A JP5773153B2 (ja) | 2011-08-24 | 2011-08-24 | 電子装置およびその製造方法、並びに発振器 |
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JP2011182711A JP5773153B2 (ja) | 2011-08-24 | 2011-08-24 | 電子装置およびその製造方法、並びに発振器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013045893A JP2013045893A (ja) | 2013-03-04 |
JP2013045893A5 JP2013045893A5 (enrdf_load_stackoverflow) | 2014-08-21 |
JP5773153B2 true JP5773153B2 (ja) | 2015-09-02 |
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JP2011182711A Expired - Fee Related JP5773153B2 (ja) | 2011-08-24 | 2011-08-24 | 電子装置およびその製造方法、並びに発振器 |
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JP (1) | JP5773153B2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017519646A (ja) * | 2014-06-16 | 2017-07-20 | エプコス アクチエンゲゼルシャフトEpcos Ag | マイクロエレクトロニクスパッケージおよびマイクロエレクトロニクスパッケージを製造する方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016138778A (ja) | 2015-01-27 | 2016-08-04 | セイコーエプソン株式会社 | 電子デバイス、圧力センサー、高度計、電子機器および移動体 |
US10662055B2 (en) | 2017-04-27 | 2020-05-26 | Seiko Epson Corporation | MEMS element, sealing structure, electronic device, electronic apparatus, and vehicle |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4808971B2 (ja) * | 2005-01-13 | 2011-11-02 | 日本電信電話株式会社 | 微細構造体の製造方法 |
JP5207547B2 (ja) * | 2009-04-06 | 2013-06-12 | 太陽誘電株式会社 | 電子デバイスおよびその製造方法 |
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2011
- 2011-08-24 JP JP2011182711A patent/JP5773153B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017519646A (ja) * | 2014-06-16 | 2017-07-20 | エプコス アクチエンゲゼルシャフトEpcos Ag | マイクロエレクトロニクスパッケージおよびマイクロエレクトロニクスパッケージを製造する方法 |
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JP2013045893A (ja) | 2013-03-04 |
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