JP5759023B2 - Ｅｕｖ光源のための駆動レーザ送出システム - Google Patents

Ｅｕｖ光源のための駆動レーザ送出システム Download PDF

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Publication number
JP5759023B2
JP5759023B2 JP2013558029A JP2013558029A JP5759023B2 JP 5759023 B2 JP5759023 B2 JP 5759023B2 JP 2013558029 A JP2013558029 A JP 2013558029A JP 2013558029 A JP2013558029 A JP 2013558029A JP 5759023 B2 JP5759023 B2 JP 5759023B2
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Japan
Prior art keywords
beam path
light
optical
euv light
optical system
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Expired - Fee Related
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JP2013558029A
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Japanese (ja)
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JP2014510377A (ja
JP2014510377A5 (enExample
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アーショフ　アレクサンダー　アイ
アレクサンダー アイ アーショフ
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ASML Netherlands BV
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ASML Netherlands BV
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2316—Cascaded amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10061—Polarization control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/2232—Carbon dioxide (CO2) or monoxide [CO]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lasers (AREA)
JP2013558029A 2011-03-17 2012-02-28 Ｅｕｖ光源のための駆動レーザ送出システム Expired - Fee Related JP5759023B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/050,198 2011-03-17
US13/050,198 US8604452B2 (en) 2011-03-17 2011-03-17 Drive laser delivery systems for EUV light source
PCT/US2012/027026 WO2012125287A2 (en) 2011-03-17 2012-02-28 Drive laser delivery systems for euv light source

Publications (3)

Publication Number Publication Date
JP2014510377A JP2014510377A (ja) 2014-04-24
JP2014510377A5 JP2014510377A5 (enExample) 2015-04-23
JP5759023B2 true JP5759023B2 (ja) 2015-08-05

Family

ID=46827736

Family Applications (1)

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JP2013558029A Expired - Fee Related JP5759023B2 (ja) 2011-03-17 2012-02-28 Ｅｕｖ光源のための駆動レーザ送出システム

Country Status (6)

Country Link
US (2) US8604452B2 (enExample)
EP (1) EP2686649A4 (enExample)
JP (1) JP5759023B2 (enExample)
KR (1) KR101963673B1 (enExample)
TW (1) TWI559635B (enExample)
WO (1) WO2012125287A2 (enExample)

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US8604452B2 (en) * 2011-03-17 2013-12-10 Cymer, Llc Drive laser delivery systems for EUV light source
TWI473373B (zh) * 2012-11-30 2015-02-11 Ind Tech Res Inst 間隔時間可調脈衝序列產生裝置
US8872143B2 (en) 2013-03-14 2014-10-28 Asml Netherlands B.V. Target for laser produced plasma extreme ultraviolet light source
US8791440B1 (en) 2013-03-14 2014-07-29 Asml Netherlands B.V. Target for extreme ultraviolet light source
US8680495B1 (en) * 2013-03-15 2014-03-25 Cymer, Llc Extreme ultraviolet light source
US9338870B2 (en) 2013-12-30 2016-05-10 Asml Netherlands B.V. Extreme ultraviolet light source
US9232623B2 (en) 2014-01-22 2016-01-05 Asml Netherlands B.V. Extreme ultraviolet light source
US9506871B1 (en) 2014-05-25 2016-11-29 Kla-Tencor Corporation Pulsed laser induced plasma light source
US9357625B2 (en) 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
JP6441946B2 (ja) 2014-09-08 2018-12-19 ギガフォトン株式会社 レーザシステム
US9301381B1 (en) * 2014-09-12 2016-03-29 International Business Machines Corporation Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas
US10222702B2 (en) * 2015-02-19 2019-03-05 Asml Netherlands B.V. Radiation source
US10217625B2 (en) 2015-03-11 2019-02-26 Kla-Tencor Corporation Continuous-wave laser-sustained plasma illumination source
WO2016188546A1 (de) * 2015-05-22 2016-12-01 Trumpf Laser Gmbh Vorrichtung zur erzeugung eines hochleistungs-laserstrahls und euv-strahlungserzeugungsvorrichtung damit
US10495976B2 (en) * 2015-09-03 2019-12-03 Asml Netherlands B.V. Attenuation apparatus and method
US10109582B2 (en) * 2016-04-19 2018-10-23 Taiwan Semiconductor Manufacturing Company Limited Advanced metal connection with metal cut
US20170311429A1 (en) 2016-04-25 2017-10-26 Asml Netherlands B.V. Reducing the effect of plasma on an object in an extreme ultraviolet light source
US10048199B1 (en) * 2017-03-20 2018-08-14 Asml Netherlands B.V. Metrology system for an extreme ultraviolet light source
US10524345B2 (en) * 2017-04-28 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Residual gain monitoring and reduction for EUV drive laser
NL2023633A (en) * 2018-09-25 2020-04-30 Asml Netherlands Bv Laser system for target metrology and alteration in an euv light source
US10877378B2 (en) 2018-09-28 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Vessel for extreme ultraviolet radiation source
WO2020141050A1 (en) * 2018-12-31 2020-07-09 Asml Netherlands B.V. Position metrology apparatus and associated optical elements
KR102807815B1 (ko) 2020-01-09 2025-05-14 삼성전자주식회사 극자외선 광원의 레이저 빔 딜리버리 장치

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Also Published As

Publication number Publication date
TWI559635B (zh) 2016-11-21
US20140077104A1 (en) 2014-03-20
US20120235066A1 (en) 2012-09-20
KR101963673B1 (ko) 2019-03-29
EP2686649A4 (en) 2014-10-29
US8604452B2 (en) 2013-12-10
KR20140016338A (ko) 2014-02-07
JP2014510377A (ja) 2014-04-24
TW201244305A (en) 2012-11-01
US8829478B2 (en) 2014-09-09
WO2012125287A2 (en) 2012-09-20
WO2012125287A3 (en) 2013-12-27
EP2686649A2 (en) 2014-01-22

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