JP5740244B2 - 有機ｅｌ素子の製造方法及び製造装置 - Google Patents

有機ｅｌ素子の製造方法及び製造装置 Download PDF

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Publication number
JP5740244B2
JP5740244B2 JP2011177030A JP2011177030A JP5740244B2 JP 5740244 B2 JP5740244 B2 JP 5740244B2 JP 2011177030 A JP2011177030 A JP 2011177030A JP 2011177030 A JP2011177030 A JP 2011177030A JP 5740244 B2 JP5740244 B2 JP 5740244B2
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JP
Japan
Prior art keywords
organic
base material
layer
shadow mask
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011177030A
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English (en)
Japanese (ja)
Other versions
JP2013041721A (ja
Inventor
伸和 根岸
伸和 根岸
成紀 森田
成紀 森田
純一 長瀬
純一 長瀬
孝洋 中井
孝洋 中井
良平 垣内
良平 垣内
細川　和人
和人 細川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP2011177030A priority Critical patent/JP5740244B2/ja
Priority to CN201280034342.4A priority patent/CN103650641A/zh
Priority to EP20120823700 priority patent/EP2744305A4/fr
Priority to PCT/JP2012/069732 priority patent/WO2013024707A1/fr
Priority to KR1020137029160A priority patent/KR20140045353A/ko
Publication of JP2013041721A publication Critical patent/JP2013041721A/ja
Application granted granted Critical
Publication of JP5740244B2 publication Critical patent/JP5740244B2/ja
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2011177030A 2011-08-12 2011-08-12 有機ｅｌ素子の製造方法及び製造装置 Expired - Fee Related JP5740244B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011177030A JP5740244B2 (ja) 2011-08-12 2011-08-12 有機ｅｌ素子の製造方法及び製造装置
CN201280034342.4A CN103650641A (zh) 2011-08-12 2012-08-02 有机el元件的制造方法和制造装置
EP20120823700 EP2744305A4 (fr) 2011-08-12 2012-08-02 Procédé et dispositif de fabrication d'un élément électroluminescent organique
PCT/JP2012/069732 WO2013024707A1 (fr) 2011-08-12 2012-08-02 Procédé et dispositif de fabrication d'un élément électroluminescent organique
KR1020137029160A KR20140045353A (ko) 2011-08-12 2012-08-02 유기 el 소자의 제조 방법 및 제조 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011177030A JP5740244B2 (ja) 2011-08-12 2011-08-12 有機ｅｌ素子の製造方法及び製造装置

Publications (2)

Publication Number Publication Date
JP2013041721A JP2013041721A (ja) 2013-02-28
JP5740244B2 true JP5740244B2 (ja) 2015-06-24

Family

ID=47715029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011177030A Expired - Fee Related JP5740244B2 (ja) 2011-08-12 2011-08-12 有機ｅｌ素子の製造方法及び製造装置

Country Status (5)

Country Link
EP (1) EP2744305A4 (fr)
JP (1) JP5740244B2 (fr)
KR (1) KR20140045353A (fr)
CN (1) CN103650641A (fr)
WO (1) WO2013024707A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5369240B2 (ja) * 2012-02-28 2013-12-18 日東電工株式会社 有機ｅｌ素子の製造方法及び有機ｅｌ素子
JP2014154315A (ja) * 2013-02-07 2014-08-25 Hitachi High-Technologies Corp 有機ｅｌデバイス製造装置及び有機ｅｌデバイス製造方法
JP6111822B2 (ja) * 2013-04-25 2017-04-12 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子の製造方法及び製造装置
DE102013111591A1 (de) * 2013-10-21 2015-04-23 Osram Oled Gmbh Verfahren und Vorrichtung zum Ausbilden einer organischen funktionellen Schichtenstruktur und optoelektronisches Bauelement
JP6070530B2 (ja) * 2013-12-19 2017-02-01 住友金属鉱山株式会社 部材内に設けた空洞部への微細孔の貫通方法およびこれを用いたガス放出金属ロールの製造方法
JP6781568B2 (ja) * 2016-04-07 2020-11-04 住友化学株式会社 有機電子デバイスの製造方法
TWI574443B (zh) * 2016-05-27 2017-03-11 瑩耀科技股份有限公司 多重圖樣化裝置及其運作方法
EP3272901A1 (fr) * 2016-07-18 2018-01-24 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Système et procédé de dépôt
JP6823470B2 (ja) * 2017-01-23 2021-02-03 住友化学株式会社 有機デバイスの製造方法及び成膜装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001005194A1 (fr) * 1999-07-07 2001-01-18 Sony Corporation Procede et appareil de fabrication d'afficheur electroluminescent organique souple
US6547939B2 (en) * 2001-03-29 2003-04-15 Super Light Wave Corp. Adjustable shadow mask for improving uniformity of film deposition using multiple monitoring points along radius of substrate
JP2003041361A (ja) * 2001-08-02 2003-02-13 Sony Corp 成膜装置
JP4336869B2 (ja) 2001-11-27 2009-09-30 日本電気株式会社 真空成膜装置、真空成膜方法および電池用電極の製造方法
JP2003173870A (ja) 2001-12-04 2003-06-20 Sony Corp 有機エレクトロルミネッセンス素子の製造装置及び製造方法
US7253533B2 (en) * 2004-05-06 2007-08-07 Au Optronics Corporation Divided shadow mask for fabricating organic light emitting diode displays
JP2008226689A (ja) * 2007-03-14 2008-09-25 Konica Minolta Holdings Inc 可撓性基板への透明導電膜の形成装置、マスク部材、及び有機エレクトロルミネッセンス素子用透明導電膜樹脂基板
KR101553942B1 (ko) * 2009-04-24 2015-09-17 엘지디스플레이 주식회사 플렉서블 디스플레이 제조장치

Also Published As

Publication number Publication date
WO2013024707A1 (fr) 2013-02-21
KR20140045353A (ko) 2014-04-16
EP2744305A4 (fr) 2015-05-13
CN103650641A (zh) 2014-03-19
JP2013041721A (ja) 2013-02-28
EP2744305A1 (fr) 2014-06-18

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