JP5729540B2 - Field effect transistor and manufacturing method thereof - Google Patents

Description

  The present invention relates to a field effect transistor using an organic semiconductor and a manufacturing method thereof.

  In recent years, field-effect transistors (FETs) using organic semiconductor materials have been actively researched and developed. Compared to inorganic materials typified by silicon, which has been used in conventional semiconductor elements, organic semiconductor materials have the feature that they can be easily formed into thin films at room temperature by a printing method. It has the advantage of being able to. With these features, field effect transistors are expected to facilitate the formation of semiconductor elements on plastic substrates, which has been difficult in the past, and can be manufactured in a large area at a low cost. As a typical example of a printing method used for manufacturing such a field effect transistor, an inkjet method can be given (for example, see Patent Documents 1 to 4).

When the ink jet printing method is used, the electrode pattern can be directly drawn, so that the utilization efficiency of the material is increased, and there is a possibility that the manufacturing process can be simplified and the cost can be reduced.
However, the ink jet printing method has a large ink landing variation, and the pattern shape formed by the wettability of the surface of the printed material is greatly affected, so that it is difficult to form a high-definition transistor element pattern. In the printed pattern, when a shape defect occurs due to the above-described problem, a problem such as disconnection or leakage occurs in the electrode, which causes an increase in off-current or non-uniform characteristics in the semiconductor.

For example, in the invention described in Japanese Patent Application Laid-Open No. 2005-310962 (Patent Document 5), the critical surface energy of the surface of the insulating film is changed by applying energy, and high-definition patterning of the wiring electrode is performed. Realized.
However, such energy application to the surface of the insulating film is not a big problem in the case of electrode formation, but has a great influence on the characteristics when used for the formation of a semiconductor material. That is, by applying energy to the surface of the insulating film, radicals or ion species are formed on the surface of the insulating film, or the shape of the surface of the insulating film is disturbed. As a result, the characteristics of the semiconductor formed thereon are greatly affected. As described above, controlling the surface energy of the base material in electrode formation is a very useful means, but it is very difficult to apply the method as it is to the semiconductor layer formation.

On the other hand, many attempts have been made to improve semiconductor characteristics by using a silicon oxide film as a gate insulating film and forming a self-assembled monolayer (SAM) on the gate insulating film.
For example, in the invention described in Japanese Patent No. 4419373 (Patent Document 6), a semiconductor is formed on a SAM having high affinity with an organic semiconductor using two types of SAM treatment agents. However, the SAM treatment method using light irradiation and chemical reaction causes problems such as generation of radicals and ion species by photoreaction, defects in unreacted parts, and disorder of the insulating film surface due to excessive chemical reaction. It was difficult to use in the polymer insulating film used in the above.
In the invention described in Japanese Patent Laid-Open No. 2009-246342 (Patent Document 7), the gate insulating film is formed as a three-layer structure, and the uppermost layer is SAM. Japanese Patent Laid-Open No. 2009-290187 (Patent Document 8) In the invention described in (1), the SAM is formed on the gate insulating film by a specific method. However, the possibility of the above-mentioned problem still remains.

  An object of the present invention is to provide a field effect transistor having excellent shape reproducibility of a semiconductor formed by a printing method without affecting semiconductor characteristics in the production of a field effect transistor.

As a result of repeated investigations to solve the above problems, the present inventor has found that the problems can be solved by the following method.
(1) A method of manufacturing a field effect transistor comprising at least a gate electrode, a source electrode, a drain electrode, a semiconductor layer, and a gate insulating film formed on a substrate, wherein the semiconductor layer is formed on at least the gate insulating film The gate insulating film is formed of a material capable of generating a functional group capable of reacting with a silane coupling agent by exposure, and a semiconductor on the gate insulating film is formed before the step. to have a step of reacting a silane coupling agent and the functional group having a fluorinated alkyl group in the process and the exposure unit for exposing a peripheral area, the gate insulating film is a polymer material is a polyimide resin, the polyimide resin, a field effect type, characterized in that a compound comprising a compound having a structure represented by the following formula, or a structure represented by the following formula in the main chain Method of manufacturing a transistor.

( 2 ) The method for producing a field effect transistor according to (1), wherein the surface energy of the channel region of the insulating film is 40 mN / m or less.
( 3 ) The method for producing a field effect transistor according to (1) or (2), wherein the surface roughness of the gate insulating film is Ra = 10 nm or less.
( 4 ) The field effect transistor according to any one of (1) to ( 3 ), wherein a difference between the surface energy of the source electrode and the drain electrode and the surface energy of the channel region of the insulating film is 10 mN / m or less. Manufacturing method.
( 5 ) The method for producing a field effect transistor according to any one of (1) to ( 4 ), wherein an irradiation amount (exposure amount) in the gate insulating film is 5 to 20 J / cm ² .
( 6 ) The production of the field effect transistor according to any one of (1) to ( 5 ), wherein the reactive functional group of the silane coupling agent is any one of triethoxysilane, trimethoxysilane, and trichlorosilane. Method.
( 7 ) The method for producing a field effect transistor according to any one of (1) to ( 6 ), wherein the exposure wavelength includes a wavelength in a vacuum ultraviolet region.
( 8 ) A field effect transistor manufactured by the manufacturing method according to any one of (1) to ( 7 ) above.

  According to the present invention, it is possible to provide a field effect transistor having excellent shape reproducibility of a semiconductor formed by a printing method without affecting semiconductor characteristics.

It is a figure which shows the structure of a field effect transistor. It is a figure which shows the other structure of a field effect transistor. FIG. 3 is a diagram of the field effect transistor manufactured in Example 1 as viewed from above.

  The present invention relates to a method for manufacturing a field effect transistor in which at least a gate electrode, a source electrode, a drain electrode, a semiconductor layer, and a gate insulating film are formed on a substrate, and the semiconductor includes at least the gate insulating film on the semiconductor substrate. A step of forming a layer, and the gate insulating film is formed of a material capable of generating a functional group capable of reacting with a silane coupling agent by exposure, and before the step, a semiconductor on the gate insulating film is formed. It has the process of exposing the circumference | surroundings of the area | region to form, and the process of making the silane coupling agent which has a fluorinated alkyl group react with this functional group in an exposure part.

The insulating film material used in the present invention may be any material that generates a functional group (hydroxyl group, amino group, etc.) capable of reacting with a silane coupling agent upon exposure. Is preferred.
Specific examples include polyethylene, polypropylene, polystyrene, polyisobutylene, polyvinyl chloride, phenol resin, polyamide, polycarbonate, polyethylene terephthalate, polybutylene terephthalate, epoxy resin, polyphenylene sulfide, polyetherimide, polyethylene naphthalate, polyethersulfone, General-purpose resins such as polyimide may be used, or a mixture thereof may be used, but polyimide is particularly preferably used.
The polyimide is particularly preferably a structure (compound) having the above specific structure or a structure (compound) containing a structure represented by the following formula in the main chain.
These polymers are more excellent in durability when cured with light or heat. When using a photocurable material, it is preferable that the wavelength used for the exposure and the wavelength used for the curing are different.

The surface of the insulating film preferably has a surface energy of 40 mN / m or less, and preferably 30 mN / m or less, from the viewpoint of semiconductor characteristics or semiconductor shape stability, and prevention of contamination of the insulating film. Further, when the surface roughness of the insulating film surface is Ra = 10 nm or less, it is possible to provide a field effect transistor having further excellent characteristics.
A method for forming the insulating film is not particularly limited, but a method using a spin coater, a slit coater, a die coater, a spray coater, a bar coater or the like can be cited as a preferable coating method.

As a light source used for exposure, for example, a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a xenon lamp, an excimer UV lamp, a laser such as an excimer laser, a CO ₂ laser, a XeF excimer laser, a YAG laser, or an Ar laser. Etc. In addition, as a wavelength region used for exposure, ultraviolet light can be preferably used to generate a functional group capable of reacting with a silane coupling agent on the surface of the insulating film, but a light source including a wavelength in the vacuum ultraviolet region is more preferable. Use.

The portion to be exposed is around a region where a semiconductor is formed on the gate insulating film. Here, the “periphery” around the region where the semiconductor is formed on the gate insulating film refers to “the vicinity of the channel region on the gate insulating film but outside the channel region and around the channel region”. means.
In the present invention, the periphery of the region where the semiconductor is formed on the gate insulating film is exposed, and the exposed portion reacts with a silane coupling agent having a fluoroalkyl group to relatively increase the surface energy at the semiconductor formation position. Thus, the semiconductor can be formed into an arbitrary shape. As a method for exposing an arbitrary position, a mask may be used, or an arbitrary position may be scanned with a laser or the like. The exposure site only needs to be out of the semiconductor formation position, and the shape stability is improved if the entire outer periphery of the semiconductor formation position is exposed. However, if the semiconductor can be formed in an arbitrary shape, the entire outer periphery need not be exposed.

In order to generate a functional group capable of reacting with the silane coupling agent on the surface of the insulating film by exposure, the irradiation amount (exposure amount) on the surface of the insulating film is preferably 0.1 to 50 J / cm ² , 20) More preferably, it is J / cm ² . When the irradiation amount is less than 0.1 J / cm ^2, no functional group capable of reacting with the silane coupling agent is generated, and even if generated, the number of functional groups is small, while the irradiation amount is less than 50 J / cm ² . If the amount is too large, the surface of the insulating film becomes rough and a good reaction with the silane coupling agent cannot be performed.
Although the detailed examination about why the functional group is generated when the insulating film is exposed has not been made, the chemical bond on the surface of the insulating film is broken by the exposure, and the portion is combined with oxygen and moisture in the air. It is considered that a functional group is generated by reacting or an active gas such as ozone generated by exposure reacts with the surface of the insulating film. The generated functional group does not easily disappear with time unless there is any external action or energy application.
Note that whether or not a functional group capable of reacting with the silane coupling agent is generated on the surface of the insulating film can be easily determined by measuring an infrared absorption spectrum on the surface of the insulating film.

  The silane coupling agent used in the present invention may have a fluorinated alkyl group at least in part, and the length of the alkyl group and the fluorination rate are not limited, but a fluorinated alkyl group having an alkyl chain length of 4 or more is used. It is preferable to have. Further, from the viewpoint of easy material production and uniform coupling reaction conditions, the reactive functional group of the silane coupling agent is preferably any one of triethoxysilane, trimethoxysilane, and trichlorosilane.

  The structure of the silane coupling agent used in the present invention is represented by the following compound No. Although shown to 1-10, the silane coupling agent used by this invention is not restricted to these. Among these, No. 9, no. A silane coupling agent having a structure of 10 is preferable in terms of reactivity and characteristics.

Examples of the reaction of the silane coupling agent include a liquid phase method by immersion in a reaction solution or a gas phase method using a reactive gas, but a gas phase method with little damage to the substrate is preferable.
In the present invention, for reacting the functional group generated in the insulating film with the silane coupling agent by the vapor phase method, for example, a gate electrode and an insulating film in which a functional group is generated are stacked on a substrate. The silane coupling agent may be reacted by exposure to vapor of the silane coupling agent at 40 to 200 ° C., preferably 100 to 180 ° C.

  As described above, the field effect transistor manufacturing method of the present invention includes forming a gate insulating film with a material capable of generating a functional group capable of reacting with a silane coupling agent by exposure, and forming a semiconductor layer on the gate insulating film. Prior to forming, the periphery of the region where the semiconductor is formed on the gate insulating film is exposed, and the exposed portion reacts the silane coupling agent having a fluoroalkyl group with the functional group generated in the gate insulating film. The method is the same as that of a conventional field effect transistor manufacturing method except that a process is provided.

  Therefore, as a method for manufacturing the field effect transistor of the present invention, a method of forming a semiconductor by forming a semiconductor on the source electrode / drain electrode and a method of forming a channel by forming a source electrode / drain on the semiconductor are considered. The field effect transistor manufacturing method of the present invention may use either of the above methods, but particularly in the method of forming a semiconductor on the source electrode / drain, the surface energy of the source electrode / drain electrode and the insulating film If the difference from the surface energy of the channel region is 10 mN / m or less, the influence of the electrode surface on the semiconductor shape can be reduced.

Hereinafter, the field effect transistor produced according to the present invention will be described in more detail, but the present invention is not limited thereto.
A general field effect transistor has a structure of a support substrate such as glass or plastic, a gate electrode, a source electrode, a drain electrode, a gate insulating film, and an organic semiconductor layer. By changing the gate voltage, the amount of charge at the interface between the gate insulating layer and the organic semiconductor layer is controlled, and the magnitude of the drain current flowing between the drain electrode and the source electrode is changed to perform switching.

As a configuration of a field effect transistor, generally, as shown in FIG. 1, a gate electrode 2 is formed on a first substrate 1, and a gate insulating film 3 is formed so as to cover the gate electrode 2. The organic semiconductor layer 4 is formed on the source electrode 5 and the drain electrode 6 to form a field effect transistor. Alternatively, as shown in FIG. 2, the gate electrode 12 is formed on the substrate 11, the gate insulating film 13 is formed so as to cover the gate electrode 12, the organic semiconductor layer 14 is formed thereon, and then the source electrode 15 and A configuration in which the drain electrode 16 is formed to form a field effect transistor is conceivable. In FIGS. 1 and 2, reference numerals 7 and 17 denote channel regions.
The structure of the field effect transistor can be selected as an optimum structure depending on the suitability of the process, and the present invention is not limited to these structures.

  The substrate to be used may be a support capable of forming a field effect transistor, and as described above, glass, polycarbonate, polyarylate, polyethersulfone, polyester or other plastic, silicon wafer, stainless steel, or the like is used. be able to. In particular, polycarbonate, polyethylene naphthalate and the like are preferable from the viewpoint of heat resistance and durability.

  The members of the gate electrode, the source electrode, and the drain electrode may be the same member or separate members, and it is sufficient that a current sufficient for driving the semiconductor element can flow. Specifically, metals such as platinum, gold, silver, nickel, chromium, copper, iron, zinc, tin, tantalum, aluminum and tungsten, oxides such as ATO, ITO, IZO, and FTO, conductive polyaniline, conductive Examples include conductive polymers such as polypyrrole, conductive polythiophene, and PEDOT / PSS, carbon, etc. Among them, platinum, gold, silver, copper, aluminum, indium, ITO, IZO, PEDOT / PSS, and carbon are examples. preferable. Two or more of these materials may be used in combination.

  As a method for forming these electrodes, a vapor deposition method, a sputtering method, or the like can be used. However, a forming method by a printing method using a solution or dispersion of the above member is preferably used because of the simplicity of the process. Examples of the printing method for forming the electrode include an inkjet method, a screen printing method, a micro contact printing method, an offset printing method, a flexographic printing method, a relief printing method, an intaglio printing method, and the like.

Semiconductor materials in the present invention include low molecular organic semiconductors such as pentacene, anthracene, tetracene, porphyrins or derivatives thereof, organic pigments such as phthalocyanines, organic silicon compounds, polythiophene, polypyrrole, polyaniline, polyphenylene, polyphenylene Common organic semiconductor materials such as conjugated polymers such as vinylene or derivatives thereof can be used.
As a method for forming the semiconductor layer, a formation method by a printing method using the solution or dispersion liquid of the above member is preferably used. Examples of printing methods include ink jet methods, screen printing methods, micro contact printing methods, offset printing methods, flexographic printing methods, letterpress printing methods, intaglio printing methods, etc. Ink jet method is particularly preferable because of the relatively easy adjustment.

  The field effect transistor produced by the production method of the present invention may be provided with an extraction electrode from each electrode as necessary. Further, a protective layer can be provided as necessary for protection from mechanical destruction, protection from moisture and gas, or protection for the convenience of device integration.

  The above-described field effect transistor of the present invention can be suitably used as an element for driving various conventionally known display image elements such as liquid crystal, electroluminescence, electrochromic, electrophoresis, etc. It is possible to produce a display called “electronic paper”. The display device is, for example, a liquid crystal display element in a liquid crystal display device, an organic or inorganic electroluminescence display element in an EL display device, and an electrophoretic display element in an electrophoretic display device as one display pixel. A plurality of arrays are arranged in a matrix in the X and Y directions. The display element includes the field effect transistor of the present invention as a switching element for applying a voltage or supplying a current to the display element.

  The display device includes a plurality of switching elements corresponding to the number of display elements, that is, the number of display pixels. The display element includes, in addition to the switching element, for example, a substrate, an electrode such as a transparent electrode, a polarizing plate, a color filter, and the like. However, these components are not particularly limited and may be used depending on the purpose. Can be appropriately selected, and conventionally known ones can be used.

  When the display device forms a predetermined image, for example, the switching elements arbitrarily selected from the switching elements arranged in a matrix form apply voltage or current to the corresponding display elements. By configuring so that the switch is turned on or off only during supply and off or on at other times, the display device can display at high speed and high contrast.

As an image display operation in the display device, an image or the like is displayed by a conventionally known display operation.
For example, in the case of the liquid crystal display element, an image or the like is displayed by controlling the molecular arrangement of the liquid crystal by applying a voltage to the liquid crystal. In the case of the organic or inorganic electroluminescent display element, an image or the like is displayed by supplying a current to a light emitting diode formed of an organic or inorganic film to cause the organic or inorganic film to emit light. In the case of the electrophoretic display element, for example, a voltage is applied to white and black colored particles charged to different polarities, and the particles are electrophoresed between electrodes in a predetermined direction to generate an image or the like. Is displayed.

  The display device can be manufactured by a simple process such as coating and printing of the switching element, and can use a substrate that cannot withstand high-temperature processing such as a plastic substrate or paper, and can be a large-area display. However, the switching element can be fabricated with energy saving and low cost. Further, as a device such as an IC tag, an IC in which the field effect transistor of the present invention is integrated can be used.

  EXAMPLES Hereinafter, the present invention will be described more specifically based on examples. However, the present invention is not limited by these examples, and these examples are appropriately modified without departing from the gist of the present invention. Is also within the scope of the present invention. Here, the part is based on weight.

[Example 1]
1) Formation of a gate electrode A nanosilver solution (a solution in which nanosilver particles are dispersed in an aqueous dispersion medium or an organic solvent dispersion medium) is applied and baked on a glass substrate using a spin coating method to form a nanosilver thin film (Ag Membrane). Next, a photoresist was spin-coated and pre-annealed at 90 ° C. for 30 minutes. Furthermore, it exposed through the photomask (150 mJ / cm < ² >), and image development and the post-baking were implemented at 120 degreeC for 20 minutes. Next, the Ag film was etched, and the resist was stripped and rinsed to form a gate electrode and a scanning line having a length of 50 μm and a width of 20 μm. The obtained gate electrode was 200 nm thick.

2) Formation of gate insulating film After firing, a polymer precursor solution (solvent: dimethylacetamide), which becomes a structure represented by the following formula, is formed, dried and fired by spin coating to form a gate insulating film. Produced. The formed gate insulating film had a thickness of 700 nm.

3) Silane coupling treatment A mask was applied to the surface of the gate insulating film in a range of 15 μm × 45 μm at the center of the gate electrode, and ultraviolet light was irradiated around the region. For the ultraviolet light, a UV lamp was used, the distance between the light source and the substrate was adjusted so that the intensity of 250 nm light was 5 mW / cm ^2, and ultraviolet rays with an irradiation amount (exposure amount) of 10 J / cm ² were irradiated. Further, this substrate was exposed to vapor of triethoxy-1H, 1H, 2H, 2H-tridecafluoro-n-octylsilane in a constant temperature bath at 150 ° C., and the compound NO. 1 silane coupling agent (Lot 1) was reacted. The surface energy of the exposed portion before silane coupling treatment was 40 mN / m, but the surface energy of the exposed portion after silane coupling treatment was 20 mN / m.

4) Formation of Semiconductor A tetralin solution (2 wt%) of P3HT (poly-3-hexylthiophene) was ejected at about 20 pL in the center of the non-exposed portion using an inkjet method. The semiconductor had a length: 15 μm, a width: 45 μm, and a thickness: 0.2 μm.

5) Production of field effect transistor Polydimethylsiloxane was processed into the shape of a source / drain electrode to produce a relief printing plate for microcontact printing. Using the relief printing, a silver nanoink (dispersion in which silver nanoparticles were dispersed in an aqueous solvent) was printed on a semiconductor by a microcontact printing method, dried, and baked at 180 ° C. for 1 hour to prepare a source / drain electrode. . The formed source electrode and drain electrode had a thickness of 150 nm. The arrangement (from the top) of the fabricated gate electrode, semiconductor and source / drain electrodes is shown in FIG.
In FIG. 3, 21 is a gate electrode, 22 is a source electrode, 23 is a drain electrode, and 24 is a semiconductor. The gate electrode is 20 μm × 50 μm, the semiconductor is 15 μm × 45 μm, and the channel length is 10 μm.
Thus, the field effect transistor of the present invention was produced. Table 1 summarizes the evaluation results of the characteristics of this transistor element.

[Examples 2 to 10]
Compound NO. 1 instead of the silane coupling agent (Lot 1). A field effect transistor of the present invention was produced in the same manner as in Example 1 except that 2 to 10 silane coupling agents (Lot 2 to 10) were used. Table 1 summarizes the evaluation results of the characteristics of these transistor elements.

[Comparative Examples 1 to 10]
A comparative field effect transistor was fabricated in the same manner as in Example 1 except that the silane coupling treatment step was omitted. Table 1 summarizes the evaluation results of the characteristics of these transistor elements.

<Semiconductor shape evaluation>
When the semiconductor shape after semiconductor formation and drying was observed with an optical microscope, it was confirmed that the mask shapes of all the samples of Examples 1 to 10 were reproduced. On the other hand, in the samples of Comparative Examples 1 to 10, it was confirmed that the semiconductor ink protrudes from the gate electrode or is displaced from the gate electrode and hardly remains on the channel.

<Semiconductor characteristic evaluation>
When the characteristics of these transistors were evaluated under conditions of room temperature and nitrogen atmosphere, typical characteristics of p-type transistors were shown in most devices. Table 1 shows the field-effect mobility calculated in the saturation region (the channel width is calculated at the designed value of 50 μm) and the on / off ratio (VG = −80 V / VG = 40 V).
(1) The field effect mobility was calculated using the following equation.
I _ds = μC _in W (V _g −V _th ) ² / 2L
Where Cin is a capacitance per unit area of the gate insulating film, W is a channel width (channel width is a designed value of 50 μm), L is a channel length, Vg is a gate voltage, Ids is a source / drain current, μ is a mobility, Vth is the threshold voltage of the gate at which the channel begins to form.
(2) The on / off ratio is such that when a voltage of 40 V is applied between the source and drain, the source-drain current I _off when the gate voltage is +40 V and the source-drain when the gate voltage is applied at −80 V and between current _{I on,} was determined from the ratio _I on _{/ I off} of.

  As is clear from Table 1, the field effect transistors of Comparative Examples 1 to 10 have very large variation in characteristics, which is considered to be a major factor due to non-uniform semiconductor formation. On the other hand, the field effect transistors of Examples 1 to 10 have small variations and excellent characteristics.

Example 11
In the silane coupling treatment, except for changing the irradiation amount (exposure amount) 10J / cm ² to 5 J / cm ² in the same manner as in Example 1 to prepare a field effect transistor of the present invention. The characteristics of this transistor element are mobility: 1.9 × 10 ⁻³ cm ^{2 /} Vs, on / off: 1.0 × 10 ⁷ , and the characteristics are excellent.

Example 12
In the silane coupling treatment, an irradiation amount (exposure amount) 10J / cm ² (20) was changed to J / cm ² in the same manner as in Example 1 to prepare a field effect transistor of the present invention. The characteristics of this transistor element are mobility: 1.8 × 10 ⁻³ cm ^{2 /} Vs, on / off: 1.2 × 10 ⁷ , and the characteristics are excellent.

Example 13
In the silane coupling treatment, except for changing the irradiation amount (exposure amount) 10J / cm ² to 0.01 J / cm ² in the same manner as in Example 1 to prepare a field effect transistor of the present invention. The characteristics of this transistor element were mobility: 0.8 × 10 ⁻³ cm ^{2 /} Vs, on / off: 1.1 × 10 ⁶ , and there was a problem with the characteristics.

1, 11 Substrate 2, 12, 22 Gate electrode 3, 13 Gate insulating layer 4, 14, 24 Semiconductor layer 5, 15, 25 Source electrode 6, 16, 26 Drain electrode 7, 17 Channel region

JP 2003-229579 A Japanese Patent Laid-Open No. 2005-039086 JP 2005-142474 A JP-A-2005-294809 JP-A-2005-310962 Japanese Patent No. 4419373 JP 2009-246342 A JP 2009-290187 A

Claims (8)

A method of manufacturing a field effect transistor comprising at least a gate electrode, a source electrode, a drain electrode, a semiconductor layer, and a gate insulating film formed on a substrate, wherein the semiconductor layer is formed at least on the gate insulating film The gate insulating film is formed of a material capable of generating a functional group capable of reacting with a silane coupling agent by exposure, and before the step, a region for forming a semiconductor on the gate insulating film is formed. have a step of reacting a silane coupling agent and the functional group having a fluorinated alkyl group in the process and the exposure unit for exposing the periphery,
The gate insulating film is a polymer material that is a polyimide resin,
The method for producing a field-effect transistor, wherein the polyimide resin is a compound having a structure represented by the following formula or a compound having a structure represented by the following formula in the main chain .
2. The method of manufacturing a field effect transistor according to claim 1, wherein the surface energy of the channel region of the gate insulating film is 40 mN / m or less. 3. The method of manufacturing a field effect transistor according to claim 1, wherein the surface roughness of the gate insulating film is Ra = 10 nm or less. Wherein the source electrode, and the surface energy of the drain electrodes, the difference between the surface energy of the channel region of the insulating film, field effect according to any one of claims 1 to 3, characterized in that not more than 10 mN / m Type transistor manufacturing method. Method for producing a field effect transistor according to any one of claims 1 to 4, the amount of irradiation (exposure) is characterized in that it is a 5~20J / cm ² in the gate insulating film. Reactive functional groups of the silane coupling agent, triethoxysilane, trimethoxysilane, manufacturing method of a field effect transistor according to any one of claims 1 to 5, characterized in that either trichlorosilane . Method for producing a field effect transistor according to any one of claims 1 to 6, characterized in that the wavelength of the exposure include wavelengths in the vacuum ultraviolet region. Field effect transistor, characterized in that it is produced by the production method according to any one of claims 1-7.