JP5725669B2 - 薄膜ディバイス及びその製造方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims description 148
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000001681 protective effect Effects 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 26
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 6
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
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- 239000007789 gas Substances 0.000 description 4
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- 229910052786 argon Inorganic materials 0.000 description 3
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- 239000002131 composite material Substances 0.000 description 3
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- 238000012986 modification Methods 0.000 description 3
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- 238000012360 testing method Methods 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
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- 238000007639 printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- 230000007261 regionalization Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
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- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
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- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
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- H01C7/006—Thin film resistors
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
- H05K1/0257—Overvoltage protection
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- H—ELECTRICITY
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- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T4/00—Overvoltage arresters using spark gaps
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/09—Shape and layout
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Description
また、同様にチップ型NTCサーミスタにおいて、放電ギャップを放電ギャップ用パターンによって形成するものが知られている(特許文献2参照)。
また、これら従来のものは、いずれもチップ型であり、薄膜製造技術を用いて薄膜で構成するものではない。
薄膜素子層としては、感熱薄膜を好適に用いることができるが、これに限定されるものではない。他の素子層を適用することができる。
図1乃至図4に示すように、薄膜ディバイス1は、基板2と、この基板2上に形成された導電層3と、薄膜素子層4と、保護絶縁層5とを備えている。
電極部31a及び31bは、後述する薄膜素子層4が接続される部分であり、略矩形状に形成され、所定の間隔を有して対向するように配置されている。
したがって、薄膜素子層4と前記放電電極部32a及び32bとは、電極部31a及び31bに対して電気的に並列に接続されるようになる。
このように保護絶縁層5を2層構成とすることにより、薄膜素子層4と保護ガラス層52との反応を抑制して信頼性を向上することが可能となる。
詳しくは、図6(a)〜(d)及び図7(e)〜(h)を参照して説明する。
(絶縁性薄膜の形成工程)
図6(a)に示すように基板2上の略全面に絶縁性薄膜21をスパッタリング法によって成膜する。
(導電層の形成工程)
(犠牲層の形成工程)
(薄膜素子層の形成工程)
(保護絶縁層の形成工程)
(犠牲層の除去工程)
本実施形態では、放電電極部32a及び32bにおける先端部321a及び321bを櫛歯状に形成し、複数の放電間隙が形成されるようにしたものである。
このような構成によれば、放電間隙における静電気放電の開始電圧を低下させることが期待できる。
したがって、導通経路34a及び34bの長さ寸法Pと導通経路35a及び35bの長さ寸法pとの差を大きく設定するものである。
よって、放電電極部32a及び32bにおける放電間隙によって放電される選択的優先度が高められる。
したがって、放電電極部32a及び32bにおける放電間隙によって放電される選択的優先度を一層高めることが可能となる。
2・・・基板
3・・・導電層
4・・・薄膜素子層
5・・・保護絶縁層
31a、31b・・・電極部
32a、32b・・・放電電極部
34a、34b、35a、35b・・・導通経路
51・・・第1層(保護薄膜層)
52・・・第2層(保護ガラス層)
S・・・犠牲層
Ct・・・空洞部
Claims (7)
- 基板と、
この基板に形成され、所定の間隔を有して配置された一対の電極部と、放電間隙を有して対向配置された一対の放電電極部と、これら電極部及び放電電極部に導通経路を介して接続されるとともに、外部の配線と電気的に接続される端子電極部とを有し、この端子電極部と前記電極部とは間隔を空けて形成されていて、前記端子電極部と前記電極部とを接続する導通経路は、前記間隔の領域において、前記端子電極部の一端側から前記電極部の他端側に延出して迂回するように形成され、前記端子電極部から電極部までの導通経路の長さ寸法をPとし、前記端子電極部から放電電極部までの導通経路の長さ寸法をpとした場合、P>pの関係となるように設定されている導電層と、
前記一対の電極部に接続された薄膜素子層と、
前記一対の放電電極部における放電間隙に少なくとも対向する空洞部を有して前記薄膜素子層及び一対の放電電極部を被覆する保護絶縁層と、
を具備することを特徴とする薄膜ディバイス。 - 前記電極部における所定の間隔をDとし、前記放電電極部における放電間隙をdとした場合、D>dの関係となるように設定されていることを特徴とする請求項1に記載の薄膜ディバイス。
- 前記端子電極部から電極部までの導通経路のパターンがミアンダ形状に形成されていることを特徴とする請求項1又は請求項2に記載の薄膜ディバイス。
- 前記一対の電極部及び一対の放電電極部は、結晶化した白金又はその合金であることを特徴とする請求項1乃至請求項3のいずれか一に記載の薄膜ディバイス。
- 前記一対の放電電極部における放電間隙は、レーザ加工によって形成されていることを特徴とする請求項1乃至請求項4のいずれか一に記載の薄膜ディバイス。
- 保護絶縁層は、第1層と第2層との2層構成であって、第2層がガラス層によって形成されていることを特徴とする請求項1乃至請求項5のいずれか一に記載の薄膜ディバイス。
- 基板に所定の間隔を有して配置された一対の電極部と、放電間隙を有して対向配置された一対の放電電極部と、これら電極部及び放電電極部に導通経路を介して接続されるとともに、外部の配線と電気的に接続される端子電極部とを有し、この端子電極部と前記電極部とを間隔を空けて形成し、前記端子電極部と前記電極部とを接続する導通経路を、前記間隔の領域において、前記端子電極部の一端側から前記電極部の他端側に延出して迂回するように形成し、前記端子電極部から電極部までの導通経路の長さ寸法をPとし、前記端子電極部から放電電極部までの導通経路の長さ寸法をpとした場合、P>pの関係となるように導電層を形成する工程と、
前記一対の電極部に接続される薄膜素子層を形成する工程と、
前記放電間隙に対向して犠牲層を形成する工程と、
前記薄膜素子層及び一対の放電電極部を被覆する保護絶縁層を形成する工程と、
前記犠牲層を除去して保護絶縁層に空洞部を形成する工程と、
を具備することを特徴とする薄膜ディバイスの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2012262994A JP5725669B2 (ja) | 2012-11-30 | 2012-11-30 | 薄膜ディバイス及びその製造方法 |
PCT/JP2013/081732 WO2014084197A1 (ja) | 2012-11-30 | 2013-11-26 | 薄膜サージアブソーバ、薄膜ディバイス及びこれらの製造方法 |
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JP2012262994A JP5725669B2 (ja) | 2012-11-30 | 2012-11-30 | 薄膜ディバイス及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
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