JP5720995B2 - Semiconductor light emitting device and method for manufacturing semiconductor light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device having a semiconductor light emitting element such as a light emitting diode.

  As a semiconductor light emitting device package, a multilayer ceramic package using LTCC (Low Temperature Co-fired Ceramics) or HTCC (High Temperature Co-fired Ceramics) is known. FIG. 1 is a cross-sectional view of a semiconductor light emitting device 300 constituted by a multilayer ceramic package. The semiconductor light emitting device 300 includes a substrate 301, an LED chip 302 mounted on the substrate 301, an electrode pad 303 formed on the surface of the substrate 301, an external connection terminal 304 formed on the back surface of the substrate 301, an electrode pad 303 and the LED chip. A bonding wire 305 that electrically connects the substrate 302, a frame body 306 that surrounds the LED chip 302 on the substrate 301, and a sealing resin 307 filled inside the frame body 306. The substrate 301 and the frame body 306 are made of ceramic and are constrained and sintered to form an integral form.

  On the other hand, a light-emitting device in which a plurality of LED chips are packaged for an application that requires a relatively high light output, such as an automobile headlamp or general illumination, is known.

JP 2009-135536 A JP 2010-21507 A

  In the monolithic ceramic package shown in FIG. 1, the electrode pad 303 may have an outermost surface made of Au from the viewpoint of securing the bonding strength with the bonding wire 305. However, since Au exhibits light absorptivity with respect to the emission wavelength of light emitted from the LED chip 302, the light output decreases. For example, in a configuration in which a plurality of LED chips are mounted on a substrate and electrode pads connected to these LED chips are arranged in one place, the area of the electrode pads is relatively large, and light extraction efficiency is increased. And the difference in brightness (brightness unevenness) in the light extraction surface become significant.

  The present invention has been made in view of the above points, and in a semiconductor light emitting device including a light emitting element and an electrode pad on a substrate, it is possible to improve light extraction efficiency and reduce luminance unevenness in a light extraction surface. An object of the present invention is to provide a semiconductor light emitting device and a method for manufacturing the same.

A semiconductor light emitting device according to the present invention is mounted in a circular array on the element mounting surface of the substrate, and a substrate having a recess provided on the element mounting surface and an electrode pad provided on the bottom surface of the recess. a plurality of light emitting elements electrically connected to the electrode pads is, have a light reflecting resin filled in the recess so as to cover the electrode pad, wherein the light reflective resin, the light emitting element the surface extending from and the top has a top forwardly projecting direction on the side walls of the recess have a concave surface than the surface of said recess is characterized that you have provided inside the annular array .

The method for manufacturing a semiconductor light emitting device according to the present invention includes a step of preparing a substrate having a recess provided on an element mounting surface and an electrode pad provided on the bottom surface of the recess, and mounting the element on the substrate. Mounting at least one light emitting element on the surface and electrically connecting the light emitting element and the electrode pad; and filling the concave portion with a light reflecting resin so as to cover the electrode pad, the light reflecting resin, the surface extending from and the top has a top forwardly projecting direction from the surface of the light emitting element on a side wall of the recess is filled such that the concave surface, the light reflective resin The filling step includes a step of aligning a dispenser enclosing the light-reflective resin above the recess, and discharging the light-reflective resin from the dispenser, and the light-reflective resin is applied to the side wall of the recess. Supplying the light-reflective resin into the recess, stopping the supply of the light-reflective resin when the supply amount of the light-reflective resin reaches a predetermined amount, and the light-reflective property And a step of pulling the dispenser upward after stopping the supply of the resin .

  According to the semiconductor light emitting device and the manufacturing method thereof of the present invention, since the electrode pad is covered with the light reflecting resin having a high light reflectance, it is possible to improve the luminous flux and the luminous intensity of the semiconductor light emitting device. Along with this, it is possible to reduce the difference in brightness (brightness unevenness) in the light extraction surface. Furthermore, since the light-reflective resin has a cover shape that has a top portion in the light projecting direction forward of the surface height of the light emitting element and has a concave surface, the above-described light output is improved and luminance unevenness is reduced. The effect becomes more remarkable.

It is sectional drawing which shows the structure of the conventional semiconductor light-emitting device. 2A is a cross-sectional view showing the configuration of the semiconductor light emitting device according to the embodiment of the present invention, and FIG. 2B is a top view showing the configuration of the semiconductor light emitting device according to the embodiment of the present invention. FIG. 3 is a cross-sectional view taken along line 2-2 in FIG. 1 is an equivalent circuit diagram of a semiconductor light emitting device according to an embodiment of the present invention. It is an expanded sectional view in the light reflection resin formation part concerning the example of the present invention. It is sectional drawing which shows the relationship between the inclination angle of a recessed part side wall, and the coating shape of light-reflective resin. 7A to 7C are cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to an embodiment of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to an embodiment of the present invention. FIGS. 9A to 9C are cross-sectional views illustrating a method for applying a light reflecting resin.

  Embodiments of the present invention will be described below with reference to the drawings. In the drawings, substantially the same or equivalent components and parts are denoted by the same reference numerals.

2A is a perspective view of the semiconductor light emitting device 1 according to the embodiment of the present invention, and FIG. 2B is a plan view of the semiconductor light emitting device 1. FIG. 3 is a cross-sectional view taken along line 3-3 in FIG.
FIG. 4 is an equivalent circuit diagram of the semiconductor light emitting device 1.

  The semiconductor light emitting device 1 is a surface mount type light emitting device in which six LED chips 20 a to 20 f are mounted on a substrate 10. The substrate 10 is configured by laminating a first ceramic layer 11 having an electrode pad formation surface and a second ceramic layer 12 having an element mounting surface. Further, a frame body 130 formed by further laminating the third ceramic layer 13 is provided on the substrate 10. A space surrounded by the side wall 132 of the frame 130 is filled with a sealing resin 60 that seals the LED chips 20a to 20f. The first to third ceramic layers are made of LTCC (low temperature co-fired ceramics) with a firing temperature of about 900 ° C., for example, by mixing a glass component with alumina ceramics. Each ceramic layer is integrally sintered and restrained. The multilayer ceramic package which comprises a form is comprised.

  On the element mounting surface of the substrate 10 (the surface of the second ceramic layer 12), six LED chips 20a to 20f are mounted in an annular arrangement. The substrate 10 has a circular recess 121 arranged inside the annular array of LED chips in the element mounting surface. Electrode pads 32 n and 32 p provided on the first ceramic layer 11 extend on the bottom surface of the recess 121. The electrode pads 32n and 32p each have a semicircular shape, and are provided adjacent to each other to form a substantially circular electrode pattern. The side wall of the recess 121 surrounds the substantially circular electrode pattern. The electrode pad 32p is an electrode pad common to the LED chips 20a, 20b, and 20c, and is connected to the p-electrodes of these LED chips via the bonding wires 40. The electrode pad 32n is an electrode pad common to the LED chips 20d, 20e, and 20f, and is connected to the n electrodes of these LED chips via the bonding wires 40.

  The substrate 10 has a plurality of circular recesses 122 arranged outside the annular array of LED chips on the element mounting surface. An electrode pad 31 n or 31 p provided on the first ceramic layer 11 extends on the bottom surface of the recess 122. The electrode pads 31n and 31p are provided independently for each LED chip. The electrode pads 31n and 31p can be circular, for example, but are not limited thereto. The electrode pads 31n are connected to the n electrodes of the LED chips 20a, 20b, and 20c via the bonding wires 40, respectively. The electrode pads 31p are connected to the p electrodes of the LED chips 20d, 20e, and 20f via the bonding wires 40, respectively. The electrode pads 31n, 31p, 32n, 32p and the external connection terminals 35p, 35n are formed of a multilayer metal film in which Ag, Pd, Ni, and Au are sequentially stacked, for example.

  As described above, the electrode pads 31n, 31p, 32n, and 32p are formed on the bottom surfaces (surfaces of the first ceramic layer 11) of the recesses 121 and 122 provided on the element mounting surface (surface of the second ceramic layer 12) of the substrate 10. It is formed and arranged at a position lower than the element mounting surface.

  External connection terminals 35 n and 35 p are provided on the back surface of the first ceramic layer 11. The external connection terminal 35n is electrically connected to the electrode pads 31n and 32n through contact vias 36n and the like. On the other hand, the external connection terminal 35p is electrically connected to the electrode pads 31p and 32p through the contact via 36p and the like. Power is supplied to the semiconductor light emitting device 1 via the external connection terminals 35p and 35n, and the LED chips 20a to 20f are driven. The LED chips 20a to 20f are connected in parallel to each other as shown in FIG.

  The element mounting surface of the substrate 10 (the surface of the second ceramic layer 12) may be covered with a light reflecting layer and a glass layer. The light reflecting layer is made of a metal such as Ag having light reflectivity with respect to light emitted from the LED chip. The light reflecting layer preferably extends over substantially the entire area of the element mounting surface of the substrate 10. The glass layer covers the upper surface and the side surface of the light reflecting layer, and prevents the reflectance from decreasing due to the deterioration of the light reflecting layer. For example, when the light reflecting layer is made of Ag, the glass layer prevents the sulfurization of Ag.

  A light reflecting resin 50 is filled in the recess 121 that is recessed with respect to the element mounting surface of the substrate 10. That is, the electrode pads 32 n and 32 p extending on the bottom surface of the recess 121 are covered with the light reflective resin 50. A part of the bonding wire 40 connected to the electrode pads 32 n and 32 p is embedded in the light reflecting resin 50. The light reflective resin 50 is, for example, a white resin in which light scattering particles such as alumina are mixed with a silicone resin. In addition to alumina, magnesium oxide, titanium oxide, zinc oxide, or the like can be used as the light scattering particles. The light reflective resin 50 has higher light reflectivity than the electrode pads 32n and 32p. The electrode pads 32n, 32p having the light absorbing Au layer on the outermost surface are coated with the light reflecting resin 50 having a high reflectance, thereby improving the light output of the semiconductor light emitting device 1 and reducing the luminance unevenness. It becomes possible. The covering shape and the like of the light reflective resin 50 will be described later.

  On the substrate 10, a frame body 130 constituted by the third ceramic layer 13 is provided. The frame 130 forms a circular side wall 132 that surrounds the LED chips 20a to 20f and the electrode pads 31n, 31p, 32n, and 32p. The side wall 132 functions as a reflector that reflects the light emitted from the LED chips 20 a to 20 f toward the inside of the semiconductor light emitting device 1. The sealing resin 60 is filled in a concave space surrounded by the side wall 132 of the frame body 130. The LED chips 20a to 20f, the electrode pads 31n, 31p, 32n, and 32p, the bonding wire 40, and the light reflective resin 50 are embedded in the sealing resin 60. The sealing resin 60 is made of a light transmissive resin such as a silicone resin. A phosphor that converts the wavelength of light emitted from the LED chip may be dispersed in the sealing resin 60.

  The covering shape of the light reflective resin 50 will be described in detail below. FIG. 5 is an enlarged cross-sectional view of a portion where the light reflective resin 50 is formed. As described above, the light reflective resin 50 fills the recess 121 provided on the element mounting surface of the substrate 10 and covers the electrode pads 32n and 32p. The light-reflecting resin 50 has a substantially conical covering shape that warps from the side wall 121 a of the recess 121 toward the center of the recess 121. That is, the light-reflective resin 50 has a top portion at a position higher than the height of the upper surface of the LED chip (that is, forward in the light projecting direction) in the center of the annular array of the LED chips 20a to 20f, and the side wall 121a of the recess 121. The surface connecting the top and the top has a substantially conical covering shape with a concave convex curved surface. Since the light reflecting resin 50 has such a covering shape, the light reflecting resin 50 effectively functions as a reflector that guides light emitted from the LED chips 20a to 20f to the light extraction surface. Further, by forming the light reflecting resin 50 so that the distance from each LED chip to the top of the light reflecting resin 50 is substantially the same, a uniform light emission distribution can be obtained.

  The supply amount of the light reflecting resin 50 is controlled so that the height of the portion of the light reflecting resin 50 in contact with the side wall 121a is lower than the height position of the element mounting surface. Thereby, the light-reflective resin 50 is prevented from spreading to the mounting area of the LED chips 20a to 20f.

  The upper surface of the sealing resin 60 is separated from the top of the light reflective resin 50 by a distance Tc. Thereby, the uniformity of the emission color and the emission luminance is improved. That is, the difference in brightness between the LED chip mounting area A and the recessed area B filled with the light-reflecting resin 50 is reduced, and when the phosphor is contained in the sealing resin 60, the color mixing of the emission color is improved.

  It is preferable that the height position of the top portion of the light reflecting resin 50 substantially coincides with the height position of the loop top of the bonding wire 40. When the light reflective resin 50 is not provided or when the height of the light reflective resin 50 is too low (for example, when the surface height of the light reflective resin 50 matches the height of the element mounting surface), the LED chip The difference between the volume of the sealing resin 60 extending in the mounting area A and the volume of the sealing resin 60 extending in the recessed area B becomes excessive. As a result, there is a possibility that a difference in expansion and contraction in the thickness direction of the sealing resin 60 occurs between the regions A and B when heat stress is applied, and the sealing resin 60 peels off in the recessed region B. As in the present embodiment, the light-reflective resin 50 is formed in the recessed region B so as to be formed in a substantially conical shape and the height position of the top portion thereof substantially coincides with the height position of the loop top of the bonding wire 40. As a result, the volume of the sealing resin 60 extending to the LED chip mounting area A and the volume of the sealing resin 60 extending to the recessed area B become substantially equal. Thereby, peeling of the sealing resin 60 due to thermal stress can be prevented. The light-reflective resin contains light scattering particles at a high concentration to obtain light reflectivity (for example, silicon resin contains alumina particles at 70 wt%), and therefore does not contain light scattering particles. The volume of the resin part is smaller than that.

  6A to 6C are cross-sectional views showing the relationship between the inclination angle of the side wall 121a of the recess 121 and the coating shape of the light reflective resin 50. FIG. In order for the light-reflecting resin 50 to function effectively as a reflector, the light-reflecting resin 50 has a warped shape that warps from the peripheral edge toward the center, that is, the light-reflecting resin. It is preferable that the surface of 50 has a concave curved surface.

  In order to form a warped shape (concave curved surface) with good reproducibility in the light reflective resin 50, the side wall 121a of the recess should be perpendicular to the bottom surface of the recess 121 as shown in FIG. Preferably, as shown in FIG. 6B, the side wall 121a is inclined so that the angle formed between the side wall 121a and the bottom surface of the recess 121 becomes an obtuse angle, in other words, the light reflecting resin 50 is filled. More preferably, the side wall 121a is inclined in a direction in which the opening diameter of the concave portion 121 is widened upward (on the element mounting surface side). The reason is as follows. That is, the light reflecting resin 50 is applied and formed by, for example, a dispensing method, and is discharged from a dispenser nozzle disposed in the center of the recess 121 (see FIG. 9). The coating shape of the light-reflecting resin 50 is determined by the surface tension h acting in the direction of adsorbing to the nozzle and the surface tension g acting in the direction climbing up the side wall 121a of the recess. As shown in FIG. 6A, when the side wall 121a of the recess is perpendicular to the bottom surface of the recess 121, or as shown in FIG. 6B, the angle formed between the side wall 121a and the bottom surface of the recess 121 is When the side wall 121a is inclined so as to have an obtuse angle, the angle formed by the direction of the surface tension h and the direction of the surface tension g can be increased. As a result, the height difference between the upper end point T at the contact portion between the light reflecting resin 50 and the side wall 121a and the warping start point S of the light reflecting resin 50 is increased, and the warped shape of the light reflecting resin 50 is increased. It can be formed with good reproducibility. As shown in FIG. 6B, when the side wall 121a is inclined such that the angle formed between the side wall 121a and the bottom surface of the recess 121 is an obtuse angle, the contact portion between the light reflective resin 50 and the side wall 121a. The height difference between the upper end point T and the warping start point S of the light reflecting resin 50 becomes larger, and the reproducibility of the warping shape of the light reflecting resin 50 can be further enhanced.

  On the other hand, FIG. 6C shows a case where the side wall 121a is inclined such that the angle formed by the side wall 121a of the recess and the bottom surface of the recess 121 is an acute angle. In this case, the angle formed by the surface tension h acting in the direction of attracting the nozzle and the surface tension g acting in the direction of scooping up the side wall 121a of the recess is compared with the case of FIG. 6 (a) and FIG. 6 (b). Get smaller. Thereby, the height difference between the upper end point T at the contact portion between the light reflecting resin 50 and the side wall 121a and the warping start point S of the light reflecting resin 50 is reduced, and the warped shape of the light reflecting resin 50 is reduced. It becomes difficult to form. That is, in this case, the surface of the light reflective resin 50 tends to be a convex curved surface (dome shape). When the surface of the light reflecting resin 50 becomes a convex curved surface, the effect of guiding the light emitted from the LED chip to the light extraction surface side is impaired, and the function of the light reflecting resin 50 as a reflector is reduced.

  From the above, in order to form the warped shape of the light reflective resin 50 with good reproducibility by filling and curing the resin, the angle formed between the side wall 121a of the recess 121 and the bottom surface of the recess 121 is a right angle or an obtuse angle. The side wall 121a is preferably inclined.

  Next, a method for manufacturing the semiconductor light emitting device 1 having the above-described configuration will be described. 7A to 7C and FIGS. 8A to 8D are cross-sectional views for each process step in the manufacturing process of the semiconductor light emitting device 1.

(Production of green sheets)
Green sheets 11A, 12A, and 13A, which are materials of the first to third ceramic layers 11, 12, and 13, are produced (FIG. 7A). Specifically, ceramic powder and glass are blended at a certain ratio and mixed. Subsequently, an organic binder and solvent are added to the mixed raw materials and dispersed until uniform to obtain a slurry. The slurry is applied on the PET film with a certain thickness by a film forming apparatus, and sheet-like green sheets 11A, 12B, and 13C are formed through a drying process.

(Green sheet processing)
The green sheets 11A, 12A, and 13A are cut to a desired size. Subsequently, through holes 36h for forming contact vias 36n and 36p are formed in the green sheet 11A that is the material of the first ceramic layer 11. In addition, circular through holes 121h and 122h for forming the recesses 121 and 122 are formed in the green sheet 12A that is the material of the second ceramic layer 12. In addition, a circular through hole 131h is formed in the green sheet 13A that is a material of the third ceramic layer 13 constituting the frame body 130 (FIG. 7B).

(Formation of electrode pads and external connection terminals)
Next, Ag-Pd paste is printed on the surface of the green sheet 11A by screen printing to form electrode pads 31n, 31p, 32n, and 32p. Further, an Ag-Pd paste is printed on the back surface of the green sheet 11A by screen printing to form the external connection terminals 35n and 35p. Further, the via-hole 36h is filled with Ag—Pd paste to form contact vias 36n and 36p (FIG. 7C).

(Baking and plating treatment)
Next, the green sheets 11A, 12A, and 13A are aligned and laminated with heat and pressure applied. Thereafter, the green sheet and the Ag—Pd paste are simultaneously fired while scattering the organic binder contained in the green sheet. Next, Ni plating treatment and Au plating treatment are performed on the electrode pads 31n, 31p, 32n, 32p and the external connection terminals 35n, 35p by electrolytic plating. By laminating the first ceramic layer 11 and the second ceramic layer 12, the element mounting surface has the recesses 121 and 122, the electrode pads 32 n and 32 p are exposed on the bottom surface of the recess 121, and the electrode is formed on the bottom surface of the recess 122. The substrate 10 with the pads 31n and 31p exposed is formed. Then, a multilayer ceramic package that is a multilayer body of the first to third ceramic layers is completed (FIG. 8A).

(Chip mount and wire bonding)
An adhesive made of silicone resin or the like is applied to the LED chip mounting position on the element mounting surface (the surface of the second ceramic layer 12) of the substrate 10, and the LED chips 20a to 20f are mounted on this adhesive. The LED chips 20a to 20f are arranged so as to form an annular array surrounding the recess 121 provided on the element mounting surface. Thereafter, the adhesive is cured by heat treatment, and the LED chips 20 a to 20 f are fixed onto the substrate 10. Next, the n and p electrodes of the LED chips 20a to 20f are connected to the electrode pads 31n, 31p, 32n, and 32p with the bonding wires 40 (FIG. 8B).

(Formation of light-reflective resin)
Next, the light reflecting resin 50 is filled in the recesses 121 arranged inside the annular array of LED chips to cover the electrode pads 32n and 32p. As the light reflective resin 50, a silicone resin containing alumina particles which are light scattering particles can be used. The mixing ratio of the alumina particles is, for example, 70 weight percent, and the viscosity of the light reflective resin 50 is about 70 Pa · s. As the light scattering particles, magnesium oxide, titanium oxide, zinc oxide and the like can be used in addition to alumina (FIG. 8C).

  Here, a coating method for making the cover shape of the light reflective resin 50 into a warped shape advantageous for light extraction will be described with reference to FIGS. 9A and 9C, the block arrow indicates the moving direction of the dispenser 200, and the broken arrow indicates the direction of pressure generated in the dispenser 200.

  The light reflecting resin 50 is applied by a dispensing method. Positioning is performed so that the dispenser 200 enclosing the light-reflective resin 50 is positioned above the center of the recess 121. Next, this is lowered while supplying compressed air to the dispenser 200. A downward pressure (discharge direction) is generated in the dispense nozzle, and the light reflecting resin 50 is discharged from the tip of the dispense nozzle (FIG. 9A).

  The descent of the dispenser 200 is stopped at the timing when the light reflective resin 50 discharged from the dispense nozzle contacts the bottom surface of the recess 121. The supply of the light reflective resin 50 is continued while the dispenser 200 is held stationary. The light-reflecting resin 50 wets and spreads on the bottom surface of the recess 121 and reaches the side wall 121a of the recess. When the supply amount of the light reflecting resin 50 filling the recess 121 reaches a predetermined amount, the supply of the compressed air is stopped to stop the supply of the light reflecting resin 50. The supply amount is controlled so that the light-reflective resin 50 does not overflow to the element mounting surface beyond the side wall 121a of the recess 121. The light-reflective resin 50 is in a state of being continuous from the portion filling the recess 121 to the tip of the dispensing nozzle (FIG. 9B).

  Next, by applying a negative pressure to the dispenser 200, the dispense nozzle 200 is pulled upward while generating an upward pressure (suction direction) in the dispense nozzle. As a result, the light-reflective resin 50 is torn into a portion that fills the concave portion 121 and a portion that adheres to the tip of the dispensing nozzle. At this time, the light-reflecting resin 50 has a concave curved side surface due to the surface tension acting in the direction of scooping up the side wall 121a of the recess and the surface tension acting in the direction of the dispensing nozzle ( FIG. 9 (c)).

  By applying the light-reflecting resin 50 in the above-described procedure in the light-reflecting resin application step, the shape of the light-reflecting resin 50 can be a warped shape that is advantageous for light extraction. When the application of the light reflecting resin 50 is completed, heat treatment is performed to cure the light reflecting resin 50.

(Formation of sealing resin)
A space formed inside the side wall 131 of the frame body 130 is filled with a sealing resin 60 made of a light transmissive resin such as a silicone resin. The LED chips 20a to 20f, the bonding wire 40, and the light reflecting resin 50 are embedded in the sealing resin 60. The sealing resin 60 is formed such that the height position of the upper surface thereof is higher than the height position of the top portion of the light reflective resin 50. A phosphor that converts the wavelength of light emitted from the LED may be dispersed in the sealing resin 60 (FIG. 8D). The semiconductor light emitting device 1 is completed through the above steps.

  As is apparent from the above description, according to the semiconductor light emitting device according to the embodiment of the present invention, the electrode pads 32n and 32p exhibiting light absorption are covered with the light reflective resin 50 having high reflectivity. It becomes possible to improve the luminous flux and luminous intensity of the light emitting device. Along with this, it is possible to reduce the difference in brightness (brightness unevenness) in the light extraction surface.

  Furthermore, since the light reflective resin 50 has a top portion in front of the light emitting direction with respect to the surface height of the LED chip and the surface has a concave curved surface, the light reflective resin 50 can function effectively as a reflector. It becomes. Thereby, the effect of improving the light output and reducing the luminance unevenness becomes more remarkable. Specifically, by making the coating shape of the light reflecting resin 50 warped, the luminous flux and the luminous intensity are increased by 5 to 20% compared to the case where the electrode pads 32n and 32p are not coated with the light reflecting resin. did. As a comparative example, a semiconductor light emitting device in which the light reflecting resin is filled in the recess 121 in a horizontal shape (that is, the light reflecting resin does not have a warped shape and the top surface is flat) is manufactured, and the same evaluation is made. As a result, the increase in luminous flux and luminous intensity was only 3 to 5%.

  Further, since the light reflective resin 50 has a warped shape having a top at a position higher than the height of the upper surface of the LED chip, the volume distribution of the sealing resin 60 is made uniform and the peeling of the sealing resin 60 is prevented. It becomes possible.

  Further, since the light reflective resin 50 is formed in the recess 121 provided in the substrate 10, it is possible to form a warped shape with good reproducibility.

  In the above-described embodiment, the case where six LED chips are mounted is illustrated, but the number of LED chips can be changed as appropriate. Further, in the above-described embodiment, the LED chips are arranged in a ring shape, and the concave portion 121 having a circular outer edge is arranged inside the annular arrangement. However, the LED chip arrangement form and the shape and arrangement of the concave portion 121 are arranged. Can be appropriately changed. In the above embodiment, the top of the light reflecting resin 50 is provided at the center of the annular array of LED chips. However, the top of the light reflecting resin 50 may be biased toward the specific LED chip. . For example, when a type of LED chip that mainly emits light from the side of the chip and a type of LED chip that mainly emits light from the chip main surface are mixed, the top of the light-reflective resin 50 is biased to the latter side. Thus, light can be extracted efficiently.

DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 10 Board | substrate 11 1st ceramic layer 12 2nd ceramic layer 13 3rd ceramic layer 20a-20f LED chip 31n, 31p, 32n, 32p Electrode pad 40 Bonding wire 50 Light reflecting resin 60 Sealing resin 121,122 Recessed part 121a Side wall 130 Frame

Claims (7)

A substrate having a recess provided on the element mounting surface, and an electrode pad provided on the bottom surface of the recess;
A plurality of light emitting elements mounted in an annular arrangement on the element mounting surface of the substrate and electrically connected to the electrode pads;
A light-reflective resin filled in the recess so as to cover the electrode pad,
The light reflecting resin, the surface extending from and the top has a top forwardly projecting direction from the surface of the light emitting element on the side walls of the recess have a concave surface,
The recess, the semiconductor light-emitting device which is characterized that you have provided inside the annular array. The semiconductor light-emitting device according to claim 1 , wherein the light-reflecting resin has a top at the center of the annular array. 3. The semiconductor light emitting device according to claim 1, wherein the side wall of the recess is inclined such that an angle formed with a bottom surface of the recess becomes an obtuse angle. The light emitting element and the electrode pad are connected via a bonding wire,
The bonding wire is part of the semiconductor light-emitting device according to any one of claims 1 to 3, characterized in that is embedded in the interior of the light reflecting resin. A frame having a side wall provided on the substrate and surrounding the light emitting element;
A sealing resin filled inside the side wall of the frame body,
Said light emitting element and the light reflective resin, the semiconductor light emitting device according to any one of claims 1 to 4, characterized in that is embedded in said sealing resin. Preparing a substrate having a recess provided on the element mounting surface and an electrode pad provided on the bottom surface of the recess;
Mounting at least one light emitting element on the element mounting surface of the substrate to electrically connect the light emitting element and the electrode pad;
Filling the recess with a light-reflective resin so as to cover the electrode pad,
The light-reflecting resin has a top part in the light projecting direction from the surface of the light emitting element and is filled so that the surface from the top part to the side wall of the concave part becomes a concave surface ,
The step of filling the light reflecting resin includes
Aligning the dispenser encapsulating the light reflective resin above the recess;
Discharging the light-reflective resin from the dispenser, and supplying the light-reflective resin into the recess so that the light-reflective resin contacts a side wall of the recess;
Stopping the supply of the light-reflective resin when the supply amount of the light-reflective resin reaches a predetermined amount;
And a step of pulling the dispenser upward after stopping the supply of the light-reflecting resin . The manufacturing method according to claim 6 , wherein in the step of pulling up the dispenser, a negative pressure is applied to the dispenser.

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