JP5720159B2 - Film for semiconductor and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor film and a method for manufacturing a semiconductor device.

  In response to the recent increase in functionality of electronic devices and expansion to mobile applications, there is an increasing demand for higher density and higher integration of semiconductor devices, and IC packages are increasing in capacity and density.

  In these semiconductor device manufacturing methods, first, an adhesive sheet is attached to a semiconductor wafer made of silicon, gallium, arsenic, etc., and the semiconductor wafer is separated into individual semiconductors by a dicing process while fixing the periphery of the semiconductor wafer with a wafer ring. The device is cut and separated (divided into individual pieces). Next, an expanding process for separating the individual semiconductor elements separated from each other and a pickup process for picking up the separated semiconductor elements are performed. Thereafter, the picked-up semiconductor element is transferred to a die bonding process for mounting on a metal lead frame or a substrate (for example, a tape substrate, an organic hard substrate, etc.). Thereby, a semiconductor device is obtained.

  In the die bonding process, the picked-up semiconductor element is stacked on another semiconductor element, whereby a chip stack type semiconductor device in which a plurality of semiconductor elements are mounted in one package can be obtained.

  As an adhesive sheet used in such a method for manufacturing a semiconductor device, one obtained by laminating a first adhesive layer and a second adhesive layer in this order on a base film is known. (For example, refer to Patent Document 1).

  This adhesive sheet is subjected to the dicing process described above in a state of being attached to a semiconductor wafer. In the dicing step, the semiconductor wafer and the two adhesive layers are separated into a plurality of parts by providing a cut so that the tip of the dicing blade reaches the base film. In the pickup process, peeling occurs at the interface between the base film and the two adhesive layers, and the separated semiconductor element is picked up together with the separated two adhesive layers. Is done. The two adhesive layers picked up are responsible for adhesion between the separated semiconductor element and the metal lead frame (or substrate) in the die bonding step.

  However, when manufacturing a semiconductor device, excellent pick-up property, that is, an interface to be peeled without causing defects such as cracks and chips in a semiconductor element in the pick-up process (in the case of Patent Document 1, two layers of a base film and two layers) However, the conventional method has a problem that it is not sufficient.

JP 2004-43761 A

  Moreover, when a dicing blade reaches | attains a base film, a base film will be shaved and the shavings will generate | occur | produce. The shavings move to the periphery of the adhesive layer and the semiconductor element through the notch, and are caught when picking up the semiconductor element. In the die bonding process, the semiconductor element and the metal lead frame or the substrate Intrusion occurs between the two or even adheres to the semiconductor element, which causes various problems.

  On the other hand, even if the dicing blade does not reach the base film, when the cut is reached in the adhesive layer, the components in the adhesive layer ooze out through the cut. This component causes an unintentional increase in adhesive strength, particularly at the edge of the semiconductor element. As a result, when picking up, a load is locally applied to the semiconductor element, which may cause problems such as cracking or chipping of the semiconductor element.

  SUMMARY OF THE INVENTION An object of the present invention is to improve a pickup property and prevent the occurrence of a problem with a semiconductor element, and to manufacture a highly reliable semiconductor device and a semiconductor device using the semiconductor film. It is to provide a method.

Such an object is achieved by the present inventions (1) to ( 8 ) below.
(1) An adhesive layer, a first adhesive layer, a second adhesive layer, and a support film are laminated in this order, and a semiconductor wafer is laminated on the surface of the adhesive layer opposite to the first adhesive layer. In this state, the semiconductor wafer and the adhesive layer are cut into individual pieces, and a semiconductor film used for picking up the obtained individual pieces from the support film,
Said first adhesive layer, Ri layer der formed by causing a layer formed of a resin composition comprising a base resin and a radiation-curable resin and energy curing initiator is cured by energy ray irradiation,
The elastic film at 23 ° C. of the first adhesive layer is 0.5 to 4.0 GPa .

  (2) The resin composition is 50 to 150 parts by mass of energy ray curable resin, 1 to 10 parts by mass of an energy ray curing initiator, and 0.1 to 5 parts by mass of a crosslinking agent with respect to 100 parts by mass of the base resin. The film for semiconductor as described in said (1) formed by mix | blending.

  (3) The semiconductor according to (1) or (2), wherein an outer peripheral edge of the adhesive layer and an outer peripheral edge of the first adhesive layer are respectively located on an inner side than an outer peripheral edge of the second adhesive layer. Film.

  (4) The film for semiconductor according to any one of (1) to (3), wherein the elastic modulus at 23 ° C. of the second adhesive layer is smaller than the elastic modulus at 23 ° C. of the first adhesive layer.

( 5 ) The film for a semiconductor according to any one of (1) to ( 4 ), wherein the adhesion measured when the edge of the individual piece is peeled from the first adhesive layer is 1 N / 10 mm or less. .

(6) above (1) to (5) either in contact and the said adhesive layer and a semiconductor wafer of a semiconductor film according to the, the laminate formed by laminating said semiconductor wafer and the semiconductor film A first step to be prepared;
A second step of obtaining a plurality of semiconductor elements by dividing the semiconductor wafer into pieces by providing a cut in the stacked body from the semiconductor wafer side;
And a third step of picking up the semiconductor element.

( 7 ) The method for manufacturing a semiconductor device according to ( 6 ), wherein the cut is provided so that a deepest portion thereof is located in the first adhesive layer.

( 8 ) In the single notch, the cross-sectional area of the tip side portion from the interface between the adhesive layer and the first adhesive layer is 5 × 10 ^{−5 to} 300 × 10 ⁻⁵ mm ² above ( 6 ) Or ( 7 ) A method for manufacturing a semiconductor device.

  According to the present invention, the adhesive property of the semiconductor element from the adhesive layer is excellent, and even after being left for a long time, an increase in the adhesive force between the semiconductor element and the adhesive layer over time is suppressed, whereby the adhesive layer The pick-up property of the semiconductor element can be maintained, and further, the adhesiveness between the adhesive layer and the wafer ring is excellent, so that the dicing property and pick-up property at the time of processing the semiconductor wafer can be stabilized.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view (longitudinal sectional view) for explaining a preferred embodiment of a semiconductor film of the present invention and a method of manufacturing a semiconductor device of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view (longitudinal sectional view) for explaining a preferred embodiment of a semiconductor film of the present invention and a method of manufacturing a semiconductor device of the present invention. It is a figure for demonstrating the method to manufacture the film for semiconductors of this invention. It is a figure (longitudinal sectional view) for demonstrating the method to measure the adhesive force of a 1st adhesion layer and an adhesion layer. It is a figure (longitudinal sectional view) for demonstrating other embodiment of the manufacturing method of the semiconductor device of this invention.

  Hereinafter, the film for semiconductor and the method for manufacturing a semiconductor device of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  1 and 2 are diagrams (longitudinal sectional views) for explaining a preferred embodiment of a semiconductor film of the present invention and a method of manufacturing a semiconductor device of the present invention, and FIG. 3 shows a semiconductor film of the present invention. It is a figure for demonstrating the method to manufacture. In the following description, the upper side in FIGS. 1 to 3 is referred to as “upper” and the lower side is referred to as “lower”.

[Semiconductor film]
A semiconductor film 10 shown in FIG. 1 has a support film 4, a first adhesive layer 1, a second adhesive layer 2, and an adhesive layer 3. More specifically, the semiconductor film 10 is obtained by laminating the second adhesive layer 2, the first adhesive layer 1, and the adhesive layer 3 on the support film 4 in this order.

  As shown in FIG. 1A, such a semiconductor film 10 supports a semiconductor wafer 7 when the semiconductor wafer 7 is laminated on the upper surface of the adhesive layer 3 and the semiconductor wafer 7 is separated into individual pieces by dicing. At the same time, when the separated semiconductor wafer 7 (semiconductor element 71) is picked up, the first adhesive layer 1 and the adhesive layer 3 are selectively peeled off, so that the picked-up semiconductor element 71 is insulated from the insulating substrate. 5 has a function of providing an adhesive layer 31 for adhering onto the substrate 5.

  Further, the outer peripheral portion 41 of the support film 4 and the outer peripheral portion 21 of the second adhesive layer 2 exist outside the outer peripheral edge 11 of the first adhesive layer 1, respectively.

  Among these, the wafer ring 9 is attached to the outer peripheral portion 21. Thereby, the semiconductor wafer 7 is reliably supported.

  By the way, in the manufacture of a semiconductor device, an excellent pick-up property, that is, an interface to be peeled without causing defects such as cracks and chips in a semiconductor element in the pick-up process (in the case of Patent Document 1, a base film and two layers) However, the conventional semiconductor film has a problem that it is not sufficient.

  On the other hand, the 1st adhesion layer of the film for semiconductors concerning the present invention hardens the layer constituted by the resin composition containing base resin, energy ray hardening resin, and energy ray hardening initiator by energy ray irradiation. It is a layer formed by making it. Thereby, reaction with an adhesive layer and energy-beam curable resin can be prevented, and the 1st adhesion layer with the target sclerosis | hardenability can be obtained. In addition, the first pressure-sensitive adhesive layer is cured with energy rays, so that even after being left for a long period of time, the change with time of the adhesive force between the adhesive layer and the first pressure-sensitive adhesive layer can be reduced, The semiconductor element can be stably picked up. Furthermore, since the adhesive force between the adhesive layer and the first adhesive layer is good, the dicing property and pick-up property when processing a semiconductor wafer can be stabilized.

Hereinafter, first, the configuration of each part of the semiconductor film 10 will be described in detail.
(First adhesive layer)
The 1st adhesion layer 1 was formed by hardening the layer comprised by the 1st resin composition containing base resin (adhesive), energy-beam curable resin, and energy-beam curing initiator by energy beam irradiation. Is a layer.

  Examples of the base resin (adhesive) include an acrylic adhesive and a rubber adhesive. .

  Examples of the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, And a copolymer with styrene, acrylonitrile, etc.). Two or more of these resins may be mixed.

  Of these, one or more selected from the group consisting of methyl (meth) acrylate, ethylhexyl (meth) acrylate and butyl (meth) acrylate, and selected from hydroxyethyl (meth) acrylate and vinyl acetate Preferred are copolymers with one or more of the above. Thereby, control of adhesiveness and adhesiveness with the other party (adherent body) which the 1st adhesion layer 1 adheres becomes easy.

  In addition, an acrylate monomer, a functional group-containing monomer, or the like may be added to the first resin composition in order to control tackiness (adhesiveness). Examples of the acrylic monomer include ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, glycidyl acrylate, 2-hydroxyethyl acrylate, ethyl acrylate, ethyl methacrylate, butyl methacrylate, 2-ethylhexyl methacrylate, Examples include glycidyl methacrylate, 2-hydroxyethyl methacrylate, methyl acrylate, butyl acrylate, and 2-ethylhexyl acrylate. Among these, at least one selected from ethyl acrylate, butyl acrylate and 2-ethylhexyl acrylate is preferable. Thereby, in addition to favorable adhesiveness, control of cohesion force is attained. Furthermore, it becomes possible to adjust the compatibility with other components.

  Examples of the functional group-containing monomer include methacrylic acid, acrylic acid, itaconic acid, hydroxyethyl methacrylate, hydroxyethyl acrylate, hydroxypropyl methacrylate, hydroxypropyl acrylate, dimethylaminoethyl methacrylate, dimethylaminoethyl acrylate, acrylamide, and methylol. Examples include acrylamide, glycidyl methacrylate, and maleic anhydride.

  Moreover, as above-mentioned, the 1st resin composition contains energy-beam curable resin. Thereby, the adhesive force of the 1st adhesion layer 1 after energy ray irradiation can be reduced.

The first pressure-sensitive adhesive layer 1 is cured with energy rays before being attached to the adhesive layer 3.
The first pressure-sensitive adhesive layer 1 is cured with energy rays, and can be prevented from reacting with the adhesive layer 3 and the energy-ray curable resin after being adhered to the adhesive layer 3. 1 can be obtained.

  Further, since the first adhesive layer 1 is cured with energy rays, no change with time after deposition on the semiconductor wafer 7 is observed, and the pick-up property of the semiconductor element 71 is stable even after being left for a long time. Can be performed.

  As the energy ray curable resin, for example, low molecular weight compounds having at least two polymerizable carbon-carbon double bonds that can be three-dimensionally cross-linked by irradiation with energy rays such as ultraviolet rays and electron beams are widely used. It is done.

  Specific examples of the energy ray curable resin include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1 , 4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, and the like, and aromatic and aliphatic urethane acrylates (oligomers). Among these, urethane acrylate is preferable. Thereby, pick-up property can be improved.

  The weight average molecular weight of the energy ray curable resin contained in the first resin composition is not particularly limited, but is preferably 400 or more and 30,000 or less, more preferably 500 or more and 12,000 or less. When the weight average molecular weight is in the range of 400 or more and 30000 or less, the crosslinked state after radiation curing can be optimized, the elongation of the coating film after radiation curing can be given, and pickup properties can be improved. If the weight average molecular weight is less than 400, there is no elongation of the coating film after radiation curing, and the paste is cracked at the time of picking up, causing a residue of adhesive. Further, when the weight average molecular weight exceeds 30000, there is a problem that handling workability is deteriorated.

  The content of the energy ray curable resin in the first resin composition is not particularly limited, but is preferably 50 to 150 parts by mass, and 60 to 140 parts by mass with respect to 100 parts by mass of the base resin. More preferred. Thereby, the adhesive force of the 1st adhesion layer 1 and the contact bonding layer 3 can be made more suitable, and it can be excellent in pick-up property over the long term.

Moreover, as above-mentioned, the 1st resin composition contains the energy beam hardening initiator.
Examples of the energy ray curing initiator include 2-2dimethoxy-1,2-diphenylethane-1-one, benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyldiphenyl sulfide, tetra Examples include methyl thiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, β-chloranthraquinone and the like.

  The content of the energy ray curing initiator contained in the first resin composition is not particularly limited, but is preferably 1 to 10 parts by mass with respect to 100 parts by mass of the base resin of the first resin composition. It is more preferably 7 parts by mass. Thereby, the adhesive force of the 1st adhesion layer 1 and the contact bonding layer 3 can be made more suitable, and it can be excellent in pick-up property over the long term.

Examples of energy rays used for energy ray curing of the first adhesive layer 1 include ultraviolet rays (UV) and electron beams (EB). The amount of energy used for the reaction is not particularly limited as long as the energy ray curable resin is cured, but in the case of ultraviolet rays, 50 to 800 mJ / cm ² is preferable in terms of the integrated light amount.

Moreover, the 1st resin composition may contain the crosslinking agent.
Examples of the crosslinking agent include epoxy crosslinking agents, isocyanate crosslinking agents, methylol crosslinking agents, chelate crosslinking agents, aziridine crosslinking agents, melamine crosslinking agents, and polyvalent metal chelating crosslinking agents. Among these, an isocyanate type crosslinking agent is preferable. Thereby, it reacts with the functional group contained in the base resin, and a high molecular weight body can be obtained.

  Examples of the isocyanate crosslinking agent include polyisocyanate compounds of polyisocyanates and trimers of polyisocyanate compounds, trimers of terminal isocyanate compounds obtained by reacting the polyisocyanate compounds and polyol compounds, and terminal isocyanate urethanes. Examples thereof include blocked polyisocyanate compounds in which prepolymers are blocked with phenol, oximes and the like.

  Although content of the crosslinking agent contained in the first resin composition is not particularly limited, it is preferably 0.1 to 5 parts by mass, more preferably 1 to 3 parts by mass with respect to 100 parts by mass of the base resin. preferable. Thereby, a crosslinking agent can react only with base resin.

  Specific examples of the polyvalent isocyanate include, for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4-4′-diisocyanate, Examples include diphenylmethane-2-4′-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4-4′-diisocyanate, and dicyclohexylmethane-2-4′-diisocyanate. Among these, at least one selected from 2,4-tolylene diisocyanate, diphenylmethane-4-4'-diisocyanate, and hexamethylene diisocyanate is preferable. Thereby, especially the balance of aggregation and crosslinking of isocyanate itself can be improved.

  The first resin composition may contain an antistatic agent, a tackifier, and the like in addition to the above components.

  Antistatic agents include, for example, anionic surfactants, cationic surfactants, nonionic surfactants, surfactants such as amphoteric surfactants, carbon black as those that do not depend on temperature, Examples thereof include powders such as silver, nickel, antimony-doped tin oxide, and tin-doped indium oxide.

  Further, the content of the antistatic agent is not particularly limited, but is preferably 10 to 50 parts by mass, more preferably 20 to 30 parts by mass with respect to 100 parts by mass of the base resin. As a result, the balance between the adhesive property and the antistatic performance is particularly excellent. Thereby, static electricity generated at the time of expanding or picking up can be suppressed, so that the reliability of the semiconductor element 71 can be improved.

  For the purpose of adjusting adhesive strength and increasing shear strength, rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic petroleum resin You may add tackifiers, such as.

  The average thickness of the first adhesive layer 1 is not particularly limited, but is preferably about 1 to 100 μm, more preferably about 3 to 50 μm. If the thickness is less than the lower limit value, it may be difficult to ensure sufficient adhesive strength. If the thickness exceeds the upper limit value, the characteristics are not significantly affected, and no advantage is obtained. When the thickness is within the above range, the first adhesive layer 1 having excellent dicing properties and pick-up properties can be obtained because it does not peel off particularly during dicing and can be peeled off relatively easily with a tensile load during pick-up. can get.

(Second adhesive layer)
The second adhesive layer 2 has higher adhesiveness than the first adhesive layer 1 described above. As a result, the adhesion between the second adhesive layer 2 and the wafer ring 9 is more tightly adhered than between the first adhesive layer 1 and the adhesive layer 3, and in the second step, the semiconductor wafer 7 is diced. Thus, when separating into pieces, the space between the second adhesive layer 2 and the wafer ring 9 is securely fixed. As a result, the positional deviation of the semiconductor wafer 7 is reliably prevented, and the dimensional accuracy of the semiconductor element 71 can be prevented from being lowered.

  As the second adhesive layer 2, the same material as the first adhesive layer 1 described above can be used. Specifically, the second adhesive layer 2 is composed of a second resin composition containing an acrylic adhesive, a rubber adhesive, and the like.

  Examples of the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, Copolymers with styrene, acrylonitrile, etc.) are used. Two or more kinds of these copolymers may be mixed.

  Of these, one or more selected from the group consisting of methyl (meth) acrylate, ethylhexyl (meth) acrylate and butyl (meth) acrylate, and selected from hydroxyethyl (meth) acrylate and vinyl acetate Preferred are copolymers with one or more of the above. Thereby, control of adhesiveness and adhesiveness with the other party (adhered body) which the 2nd adhesion layer 2 adheres becomes easy.

  In addition, the second resin composition includes urethane acrylate, an acrylate monomer, and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate) in order to control adhesiveness (adhesiveness). Monomers and oligomers such as isocyanate compounds may be added.

  Furthermore, you may add the photoinitiator similar to a 1st resin composition to a 2nd resin composition.

  For the purpose of adjusting adhesive strength and increasing shear strength, rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic petroleum resin You may add tackifiers, such as.

  The average thickness of the second adhesive layer 2 is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 3 to 20 μm. If the thickness is less than the lower limit, it may be difficult to ensure sufficient adhesive force, and even if the thickness exceeds the upper limit, a particularly excellent effect cannot be obtained. In addition, since the second adhesive layer 2 is higher in flexibility than the first adhesive layer 1, the shape following property of the second adhesive layer 2 is ensured if the average thickness of the second adhesive layer 2 is within the above range. Thus, the adhesion of the semiconductor film 10 to the semiconductor wafer 7 can be further enhanced.

(Adhesive layer)
The adhesive layer 3 is made of a third resin composition containing, for example, a thermoplastic resin and a thermosetting resin. Such a resin composition is excellent in film forming ability, adhesiveness, and heat resistance after curing.

  Among these, examples of the thermoplastic resin include polyimide resins such as polyimide resins and polyetherimide resins, polyamide resins such as polyamide resins and polyamideimide resins, acrylic resins, and phenoxy resins. Among these, acrylic resins are preferable. Since the acrylic resin has a low glass transition temperature, the initial adhesion of the adhesive layer 3 can be further improved.

  The acrylic resin means acrylic acid and its derivatives. Specifically, acrylic esters such as acrylic acid, methacrylic acid, methyl acrylate, and ethyl acrylate, and methacrylates such as methyl methacrylate and ethyl methacrylate. Examples thereof include polymers such as acid esters, acrylonitrile, and acrylamide, and copolymers with other monomers.

  Among acrylic resins, acrylic resins (particularly acrylic ester copolymers) having a compound having a functional group such as epoxy group, hydroxyl group, carboxyl group, nitrile group (copolymerization monomer component) are preferable. Thereby, the adhesiveness to adherends, such as semiconductor element 71, can be improved more. Specific examples of the compound having a functional group include glycidyl methacrylate having a glycidyl ether group, hydroxy methacrylate having a hydroxyl group, carboxy methacrylate having a carboxyl group, and acrylonitrile having a nitrile group.

  Further, the content of the compound having a functional group is not particularly limited, but is preferably about 0.5 to 40% by mass, more preferably about 5 to 30% by mass of the entire acrylic resin. . When the content is less than the lower limit, the effect of improving the adhesion may be reduced, and when the content exceeds the upper limit, the adhesive force is too strong and the effect of improving the workability may be reduced.

  The glass transition temperature of the thermoplastic resin is not particularly limited, but is preferably −25 to 120 ° C., more preferably −20 to 60 ° C., and further preferably −10 to 50 ° C. preferable. If the glass transition temperature is less than the lower limit, the adhesive strength of the adhesive layer 3 may be increased and workability may be reduced. If the glass transition temperature exceeds the upper limit, the effect of improving the low temperature adhesiveness may be reduced.

  Further, the weight average molecular weight of the thermoplastic resin (particularly acrylic resin) is not particularly limited, but is preferably 100,000 or more, particularly preferably 150,000 to 1,000,000. When the weight average molecular weight is within the above range, the film formability of the adhesive layer 3 can be particularly improved.

  On the other hand, as the thermosetting resin, for example, a novolac type phenol resin such as a phenol novolak resin, a cresol novolak resin, a bisphenol A novolak resin, a phenol resin such as a resol phenol resin, a bisphenol type such as a bisphenol A epoxy resin and a bisphenol F epoxy resin. Epoxy resin, novolac epoxy resin, cresol novolac epoxy resin, etc. novolac epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, triazine nucleus-containing epoxy resin, Epoxy resins such as dicyclopentadiene-modified phenolic epoxy resins, urea (urea) resins, resins having a triazine ring such as melamine resins, Examples include polyester resins, bismaleimide resins, polyurethane resins, diallyl phthalate resins, silicone resins, resins having a benzoxazine ring, cyanate ester resins, and the like, and one or a mixture of two or more of these may be used. Good. Of these, epoxy resins or phenol resins are preferred. According to these resins, the heat resistance and adhesion of the adhesive layer 3 can be further improved.

  Further, the content of the thermosetting resin is not particularly limited, but is preferably about 0.05 to 100 parts by mass, particularly about 0.1 to 50 parts by mass with respect to 100 parts by mass of the thermoplastic resin. Is more preferable. If the content exceeds the upper limit, chipping and cracking may occur, or the effect of improving the adhesion may be reduced.If the content is lower than the lower limit, the adhesive force is too strong and pickup failure is caused. This may occur or the effect of improving workability may be reduced.

  The third resin composition preferably further contains a curing agent (in particular, when the thermosetting resin is an epoxy resin, a phenolic curing agent).

  Examples of the curing agent include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylenediamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), diaminodiphenylsulfone ( DDS) and other aromatic polyamines, dicyandiamide (DICY), amine-based curing agents such as polyamine compounds containing organic acid dihydralazide, and the like, alicyclic acids such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA) Acid anhydride curing agents such as anhydrides (liquid acid anhydrides), trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), and benzophenone tetracarboxylic acid (BTDA), phenolic resins Phenolic Agents, and the like. Among these, a phenolic curing agent is preferable, and specifically, bis (4-hydroxy-3,5-dimethylphenyl) methane (common name: tetramethylbisphenol F), 4,4′-sulfonyldiphenol, 4,4′- Isopropylidenediphenol (commonly called bisphenol A), bis (4-hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane, and bis (4- Hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane, a mixture of three types (for example, bisphenol FD manufactured by Honshu Chemical Industry Co., Ltd.) Bisphenols, 1,2-benzenediol, 1,3-benzenedio Dihydroxybenzenes such as 1,4-benzenediol, trihydroxybenzenes such as 1,2,4-benzenetriol, various isomers of dihydroxynaphthalenes such as 1,6-dihydroxynaphthalene, 2,2′- Examples include compounds such as various isomers of biphenols such as biphenol and 4,4′-biphenol.

  Further, the content of the curing agent (particularly phenol-based curing agent) is not particularly limited, but is preferably 1 to 90 parts by mass, particularly 3 to 60 parts by mass with respect to 100 parts by mass of the thermoplastic resin. Is more preferable. If the content is less than the lower limit, the effect of improving the heat resistance of the adhesive layer 3 may be reduced, and if the content exceeds the upper limit, the storage stability of the adhesive layer 3 may be reduced.

  Further, when the thermosetting resin described above is an epoxy resin, it can be determined by calculating the equivalent ratio of the epoxy equivalent and the curing agent. The epoxy equivalent of the epoxy resin and the equivalent of the functional group of the curing agent (for example, phenol resin) If present, the ratio of hydroxyl equivalent) is preferably 0.5 to 1.5, particularly preferably 0.7 to 1.3. When the content is less than the lower limit value, the storage stability may be lowered, and when the content exceeds the upper limit value, the effect of improving the heat resistance may be lowered.

  Further, the third resin composition is not particularly limited, but preferably further includes a curing catalyst. Thereby, the sclerosis | hardenability of the contact bonding layer 3 can be improved.

  Examples of the curing catalyst include amine catalysts such as imidazoles and 1,8-diazabicyclo (5,4,0) undecene, phosphorus catalysts such as triphenylphosphine, and the like. Of these, imidazoles are preferred. Thereby, especially quick curability and preservability can be made compatible.

  Examples of imidazoles include 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 1-cyanoethyl-2- Phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1 ′)]-Ethyl-s-triazine, 2,4-diamino-6- [2′-ethyl-4′methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6 -[2'-Methylimidazolyl- (1 ')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole Null acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4-diamino-6-vinyl-s-triazine, 2,4-diamino -6-vinyl-s-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-s-triazine, 2,4-diamino-6-methacryloyloxyethyl-s-triazine isocyanuric acid adduct, etc. Can be mentioned. Among these, 2-phenyl-4,5-dihydroxymethylimidazole or 2-phenyl-4-methyl-5-hydroxymethylimidazole is preferable. Thereby, the storage stability can be particularly improved.

  Further, the content of the curing catalyst is not particularly limited, but is preferably about 0.01 to 30 parts by mass, particularly about 0.5 to 10 parts by mass with respect to 100 parts by mass of the thermoplastic resin. More preferred. If the content is less than the lower limit, the curability may be insufficient, and if the content exceeds the upper limit, the storage stability may decrease.

  The average particle diameter of the curing catalyst is not particularly limited, but is preferably 10 μm or less, and more preferably 1 to 5 μm. When the average particle size is within the above range, the reactivity of the curing catalyst is particularly excellent.

  The third resin composition is not particularly limited, but preferably further includes a coupling agent. Thereby, the adhesiveness of resin, a to-be-adhered body, and a resin interface can be improved more.

  Examples of the coupling agent include a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent. Of these, silane coupling agents are preferred. Thereby, heat resistance can be improved more.

  Among these, as the silane coupling agent, for example, vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane, N-β (aminoethyl) γ-aminopropylmethyl Dimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysila N-phenyl-γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, bis (3 -Triethoxysilylpropyl) tetrasulfane and the like.

  Although content of a coupling agent is not specifically limited, It is preferable that it is about 0.01-10 mass parts with respect to 100 mass parts of thermoplastic resins, and it is more about 0.5-10 mass parts especially. preferable. If the content is less than the lower limit, the effect of adhesion may be insufficient, and if it exceeds the upper limit, it may cause outgassing or voids.

  In forming the adhesive layer 3, such a third resin composition is dissolved in a solvent such as methyl ethyl ketone, acetone, toluene, dimethylformaldehyde and the like to form a varnish, followed by a comma coater, a die coater, The adhesive layer 3 can be obtained by coating on a carrier film using a gravure coater or the like and drying.

  The average thickness of the adhesive layer 3 is not particularly limited, but is preferably about 3 to 100 μm, and more preferably about 5 to 70 μm. When the thickness is within the above range, it is particularly easy to control the thickness accuracy.

  Moreover, the 3rd resin composition may contain the filler as needed. By including the filler, the mechanical properties and adhesive strength of the adhesive layer 3 can be improved.

  Examples of the filler include particles of silver, titanium oxide, silica, mica, and the like.

  Moreover, it is preferable that the average particle diameter of a filler is about 0.1-25 micrometers. If the average particle size is less than the lower limit, the effect of filler addition is reduced, and if it exceeds the upper limit, the adhesive strength as a film may be reduced.

  Although content of a filler is not specifically limited, It is preferable that it is about 0.1-100 mass part with respect to 100 mass parts of thermoplastic resins, and it is more preferable that it is especially about 5-90 mass parts. Thereby, the adhesive force can be further increased while enhancing the mechanical properties of the adhesive layer 3.

(Support film)
The support film 4 is a support that supports the first adhesive layer 1, the second adhesive layer 2, and the adhesive layer 3 as described above.

  Examples of the constituent material of the support film 4 include polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, and ethylene vinyl acetate copolymer. , Ionomer, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, vinyl polyisoprene, polycarbonate, etc., and one or a mixture of two or more of these Is mentioned.

  The average thickness of the support film 4 is not particularly limited, but is preferably about 5 to 200 μm, and more preferably about 30 to 150 μm. Thereby, since the support film 4 has moderate rigidity, the first adhesive layer 1, the second adhesive layer 2, and the adhesive layer 3 are reliably supported to facilitate the handling of the semiconductor film 10. At the same time, when the semiconductor film 10 is appropriately curved, adhesion to the semiconductor wafer 7 can be enhanced.

(Characteristics of semiconductor film)
Although the 1st adhesion layer 1, the 2nd adhesion layer 2, and the contact bonding layer 3 have mutually different adhesive force (adhesion force), it is preferable that they have the following characteristics.

  First, the adhesive force of the first adhesive layer 1 to the adhesive layer 3 is preferably smaller than the adhesive force of the second adhesive layer 2 to the support film 4. Thereby, in the 3rd process mentioned below, when picking up the piece 83, between the support film 4 with the 2nd adhesion layer 2 does not exfoliate, but between adhesion layer 3 and the 1st adhesion layer 1 The gap is selectively peeled off. When dicing, the laminated body 8 can be reliably supported by the wafer ring 9.

  That is, in this embodiment, since the two adhesive layers of the 1st adhesion layer 1 and the 2nd adhesion layer 2 are used, it is laminated as mentioned above by making each adhesion power (adhesion power) different. It is possible to achieve both the secure fixing of the body 8 and the easy pick-up of the piece 83. In other words, both dicing properties and pickup properties can be achieved.

  The adhesion force of the first adhesive layer 1 to the adhesive layer 3 and the adhesion force of the second adhesive layer 2 to the wafer ring 9 are the kind (composition) of the acrylic resin, the kind of monomer, and the content, respectively. It can be adjusted by changing the hardness or the like.

  Further, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 before dicing is not particularly limited, but it is preferably about 2.5 to 80 cN / 25 mm on the average of the adhesion interface, and particularly 7.5 to 60 cN / More preferably, it is about 25 mm. When the adhesion is within the above range, problems such as the semiconductor element 71 falling off the first adhesive layer 1 when the laminated body 8 is extended (expanded) as described later or the laminated body 8 is diced are prevented. In addition, excellent pick-up properties are ensured.

  Note that “cN / 25 mm”, which is a unit of the above-mentioned adhesion strength, is a 25 mm wide strip-shaped sample in which the adhesive layer 3 is pasted on the surface of the first adhesive layer 1, and thereafter at 23 ° C. (room temperature). This represents the load (unit cN) when the adhesive layer portion is peeled off at a peeling angle of 180 ° and a pulling speed of 1000 mm / min in the laminated film. That is, here, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 will be described as 180 ° peel strength.

  As a composition of the 1st adhesion layer 1 which has the above characteristics, for example with respect to 100 mass parts of acrylic resins, 50-150 mass parts of acrylate monomers, 1-10 mass parts of energy ray hardening initiators, What mix | blended 0.1-10 mass parts of isocyanate compounds is mentioned.

  On the other hand, the adhesion force of the second adhesive layer 2 to the wafer ring 9 is not particularly limited, but is preferably about 100 to 2,000 cN / 25 mm on the average of the adhesion interface, particularly about 400 to 1,200 cN / 25 mm. More preferably. When the adhesion is within the above range, the laminated body 8 can be reliably supported by the wafer ring 9 when the laminated body 8 is expanded (expanded) as described later or the laminated body 8 is diced.

  In addition, “cN / 25 mm” which is a unit of the above-mentioned adhesion strength is a support film 4 in which a strip-shaped second adhesive layer 2 having a width of 25 mm is laminated so that the second adhesive layer 2 is in contact with the upper surface of the wafer ring 9. At 23 ° C. (room temperature), the support film 4 on which the second adhesive layer 2 was laminated was peeled off from the wafer ring 9 at a peeling angle of 180 ° and a pulling speed of 1000 mm / min. Represents the load (unit cN). That is, here, the adhesion force of the second adhesive layer 2 to the wafer ring 9 will be described as 180 ° peel strength.

  As a composition of the 2nd adhesion layer 2 which has the above characteristics, 1-50 mass parts of urethane acrylate and 0.5-10 mass parts of isocyanate compounds are blended with respect to 100 mass parts of acrylic resin, for example. The thing which was done is mentioned.

Incidentally, the adhesion to the first adhesive layer 3 of the adhesive layer 1 and A _1, when the adhesion to the first adhesive layer 1 of the second adhesive layer 2 and the A _2, A 2 _/ A ₁ is not particularly limited However, it is preferable that it is about 5-200, and it is more preferable that it is about 10-50. Thereby, the 1st adhesion layer 1, the 2nd adhesion layer 2, and the contact bonding layer 3 become the thing especially excellent in dicing property and pick-up property.

  Further, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 is preferably smaller than the adhesion force of the adhesive layer 3 to the semiconductor wafer 7. Thereby, when the piece 83 is picked up, it is possible to prevent the interface between the semiconductor wafer 7 and the adhesive layer 3 from being unintentionally peeled off. That is, peeling can be selectively caused at the interface between the first adhesive layer 1 and the adhesive layer 3.

  The adhesion strength of the adhesive layer 3 to the semiconductor wafer 7 is not particularly limited, but is preferably about 50 to 1000 cN / 25 mm, and more preferably about 80 to 750 cN / 25 mm. When the adhesion force is within the above range, it is possible to sufficiently prevent the occurrence of so-called “chip jump” in which the semiconductor element 71 flies off due to vibration or impact particularly during dicing.

  Here, “cN / 25 mm”, which is a unit of the above-mentioned adhesion strength, is obtained by combining a strip-shaped adhesive layer 3 having a width of 25 mm and a polyethylene terephthalate film (PET film) so that the adhesive layer 3 is in contact with the upper surface of the semiconductor wafer 7. The laminated laminate is pasted at 23 ° C. (room temperature), and then the load when the laminate is peeled off from the semiconductor wafer 7 at a peeling angle of 180 ° and a pulling speed of 1000 mm / min at 23 ° C. (room temperature). (Unit cN). That is, here, the adhesion force of the adhesive layer 3 to the semiconductor wafer 7 will be described as 180 ° peel strength.

  Moreover, it is preferable that the adhesive force with respect to the adhesive layer 3 of the 1st adhesive layer 1 is smaller than the adhesive force with respect to the 2nd adhesive layer 2 of the 1st adhesive layer 1. FIG. Thereby, when the piece 83 is picked up, it can prevent that the interface of the 1st adhesion layer 1 and the 2nd adhesion layer 2 peels unintentionally. That is, peeling can be selectively caused at the interface between the first adhesive layer 1 and the adhesive layer 3.

  In addition, although the adhesive force with respect to the 2nd adhesion layer 2 of the 1st adhesion layer 1 is not specifically limited, It is preferable that it is about 100-1,000 cN / 25mm, and it is more preferable that it is especially about 300-600 cN / 25mm. . When the adhesion is within the above range, the dicing property and the pickup property are particularly excellent.

  Here, “cN / 25 mm”, which is a unit of the above-mentioned adhesion, is a 25 mm wide strip formed by laminating the first adhesive layer 1 on the surface of the second adhesive layer 2 on the support film 4. Then, at 23 ° C. (room temperature), the load (unit cN) when the 1st adhesive layer 1 part was peeled off at a peeling angle of 180 ° and a pulling speed of 1000 mm / min in this laminated film is shown. That is, here, the adhesion force of the first adhesive layer 1 to the second adhesive layer 2 will be described as 180 ° peel strength.

(Manufacturing method of semiconductor film)
The semiconductor film 10 as described above is manufactured, for example, by the following method.

  First, the base material 4a shown in FIG. 3A is prepared, and the first adhesive layer 1 is formed on one surface of the base material 4a. Thereby, the laminated body 61 of the base material 4a and the 1st adhesion layer 1 is obtained. The first adhesive layer 1 is formed by applying the above-described resin varnish containing the first resin composition by various application methods and then drying the applied film, or laminating a film made of the first resin composition. It can be performed by a method or the like. Further, the coating film may be cured by irradiating radiation such as ultraviolet rays.

  Examples of the coating method include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method.

  Further, similarly to the laminate 61, as shown in FIG. 3A, the adhesive layer 3 is formed on one surface of the prepared base material 4b, whereby the base material 4b and the adhesive layer 3 are formed. The laminate 62 is obtained.

  Further, in the same manner as in each of the laminates 61 and 62, as shown in FIG. 3A, the second adhesive layer 2 is formed on one surface of the prepared support film 4, and thereby the support film 4 And the second adhesive layer 2 are obtained.

  Next, as illustrated in FIG. 3B, the stacked body 61 and the stacked body 62 are stacked so that the first adhesive layer 1 and the adhesive layer 3 are in contact with each other to obtain a stacked body 64. This lamination can be performed by, for example, a roll lamination method.

  Next, as shown in FIG. 3 (c), the base material 4 a is peeled from the laminate 64. And as shown in FIG.3 (d), the outer side part of the effective area | region of the said contact bonding layer 3 and the said 1st adhesion layer 1 leaves the base material 4b with respect to the laminated body 64 which peeled the said base material 4a. Is removed in a ring shape. Here, the effective area refers to an area whose outer periphery is larger than the outer diameter of the semiconductor wafer 7 and smaller than the inner diameter of the wafer ring 9.

  Next, as shown in FIG. 3 (e), a laminate in which the substrate 4 a is peeled off and the outer portion of the effective area is removed in a ring shape so that the second adhesive layer 2 is in contact with the exposed surface of the first adhesive layer 1. 64 and the laminated body 63 are laminated. Then, the film 10 for semiconductors shown in FIG.3 (f) is obtained by peeling the base material 4b.

[Method for Manufacturing Semiconductor Device]
Next, a method for manufacturing the semiconductor device 100 using the semiconductor film 10 as described above (first embodiment of the method for manufacturing a semiconductor device of the present invention) will be described.

  The semiconductor device manufacturing method shown in FIGS. 1 and 2 includes a first step in which a semiconductor wafer 7 and a semiconductor film 10 are laminated to obtain a laminated body 8, and an outer peripheral portion 21 of the semiconductor film 10 is attached to a wafer ring 9. The semiconductor wafer 7 and the adhesive layer 3 are separated into individual pieces by providing a cut 81 in the laminated body 8 from the side of the semiconductor wafer 7 (dicing), and a plurality of semiconductor elements 71 and adhesive layers 31 are formed. A second step of obtaining the piece 83; a third step of picking up at least one of the pieces 83; and a fourth step of obtaining the semiconductor device 100 by placing the picked piece 83 on the insulating substrate 5. It has these processes. Hereinafter, each step will be described in detail.

[1]
[1-1] First, a semiconductor wafer 7 and a semiconductor film 10 are prepared.

  The semiconductor wafer 7 has a plurality of circuits formed on its surface in advance. Examples of the semiconductor wafer 7 include a silicon semiconductor, a compound semiconductor wafer such as gallium arsenide and gallium nitride.

  The average thickness of the semiconductor wafer 7 is not particularly limited, and is preferably about 0.01 to 1 mm, more preferably about 0.03 to 0.5 mm. According to the method for manufacturing a semiconductor device of the present invention, the semiconductor wafer 7 having such a thickness can be cut into pieces easily and reliably without causing defects such as chipping and cracking. .

  [1-2] Next, as shown in FIG. 1A, the semiconductor film 10 and the semiconductor wafer 7 are bonded to each other while the adhesive layer 3 of the semiconductor film 10 and the semiconductor wafer 7 are brought into close contact with each other. Are stacked (first step). Note that in the semiconductor film 10 shown in FIG. 1, the size and shape of the adhesive layer 3 in plan view are set in advance to be larger than the outer diameter of the semiconductor wafer 7 and smaller than the inner diameter of the wafer ring 9. Has been. For this reason, the entire lower surface of the semiconductor wafer 7 is in close contact with the entire upper surface of the adhesive layer 3, whereby the semiconductor wafer 7 is supported by the semiconductor film 10.

  As a result of the above lamination, as shown in FIG. 1B, a laminated body 8 in which the semiconductor film 10 and the semiconductor wafer 7 are laminated is obtained.

[2]
[2-1] Next, a wafer ring 9 is prepared. Subsequently, the stacked body 8 and the wafer ring 9 are stacked so that the upper surface of the outer peripheral portion 21 of the second adhesive layer 2 and the lower surface of the wafer ring 9 are in close contact with each other. Thereby, the outer peripheral part of the laminated body 8 is supported by the wafer ring 9.

  Since the wafer ring 9 is generally made of various metal materials such as stainless steel and aluminum, the wafer ring 9 has high rigidity and can surely prevent the laminate 8 from being deformed.

  By having two adhesive layers (first adhesive layer 1 and second adhesive layer 2) having different adhesiveness as described above, the semiconductor film 10 utilizes the difference in adhesiveness, Both dicing and pickup properties can be achieved.

  [2-2] Next, a dicer table (not shown) is prepared, and the laminate 8 is placed on the dicer table so that the dicer table and the support film 4 are in contact with each other.

  Subsequently, as shown in FIG. 1C, a plurality of cuts 81 are formed in the laminate 8 using a dicing blade 82 (dicing). The dicing blade 82 is composed of a disk-shaped diamond blade or the like, and a cut 81 is formed by pressing the dicing blade 82 against the surface of the laminated body 8 on the semiconductor wafer 7 side. Then, the semiconductor wafer 7 is separated into a plurality of semiconductor elements 71 by relatively moving the dicing blade 82 along the gap between the circuit patterns formed on the semiconductor wafer 7 (second step). ). Similarly, the adhesive layer 3 is divided into a plurality of adhesive layers 31. During such dicing, vibration and impact are applied to the semiconductor wafer 7, but the lower surface of the semiconductor wafer 7 is supported by the semiconductor film 10, so that the vibration and impact are alleviated. As a result, the occurrence of defects such as cracks and chippings in the semiconductor wafer 7 can be reliably prevented.

  The depth of the notch 81 is not particularly limited as long as it can penetrate the semiconductor wafer 7 and the adhesive layer 3. That is, the tip of the cut 81 only needs to reach any of the first adhesive layer 1, the second adhesive layer 2, and the support film 4. Thereby, the semiconductor wafer 7 and the adhesive layer 3 are surely separated into individual pieces, and the semiconductor element 71 and the adhesive layer 31 are formed, respectively.

  In the present embodiment, an example will be described in which the tip of the cut 81 reaches the support film 4 as shown in FIG. Thus, when the cut 81 is provided so that the tip reaches the support film 4, the thickness of the support film 4 is sufficiently thick compared to the thickness of the first adhesive layer 1 and the second adhesive layer 2, In consideration of the positional accuracy of the dicing blade 82 in the vertical direction and the variation in the depth of the notch 81, it is possible to improve the manufacturability. In other words, in order to form the cut 81 so that the tip is held in the first adhesive layer 1 or the second adhesive layer 2, it is necessary to strictly control the vertical position of the dicing blade 82, and the production efficiency May decrease.

[3]
[3-1] Next, the laminate 8 in which the plurality of cuts 81 are formed is radially expanded (expanded) by an expanding device (not shown). Thereby, as shown in FIG.1 (d), the width | variety of the notch 81 formed in the laminated body 8 spreads, and the space | interval of the semiconductor elements 71 separated into pieces is also expanded in connection with it. As a result, there is no possibility that the semiconductor elements 71 interfere with each other, and the individual semiconductor elements 71 can be easily picked up. Note that the expanding device is configured to maintain such an expanded state even in a process described later.

  [3-2] Next, one of the separated semiconductor elements 71 is adsorbed by a collet (chip adsorbing portion) of the die bonder and pulled upward by a die bonder (not shown). As a result, as shown in FIG. 2 (e), the interface between the adhesive layer 31 and the first adhesive layer 1 is selectively peeled off, and an individual piece 83 formed by laminating the semiconductor element 71 and the adhesive layer 31 is picked up. (Third step).

  Note that the reason why the interface between the adhesive layer 31 and the first adhesive layer 1 is selectively peeled is that the adhesive property of the second adhesive layer 2 is higher than the adhesive property of the first adhesive layer 1 as described above. The adhesive force at the interface between the film 4 and the second adhesive layer 2 and the adhesive force at the interface between the second adhesive layer 2 and the first adhesive layer 1 are based on the adhesive force between the first adhesive layer 1 and the adhesive layer 3. Because it is big. That is, when the semiconductor element 71 is picked up, the interface between the first adhesive layer 1 and the adhesive layer 3 having the smallest adhesion among these three locations is selectively peeled off.

  Further, when picking up the individual piece 83, the individual piece 83 to be picked up may be selectively pushed up from below the semiconductor film 10. Thereby, since the piece 83 is pushed up from the laminated body 8, the pickup of the piece 83 mentioned above can be performed more easily. In order to push up the individual piece 83, a needle-like body (needle) that pushes up the semiconductor film 10 from below is used.

[4]
[4-1] Next, the insulating substrate 5 for mounting (mounting) the semiconductor element 71 (chip) is prepared.

  Examples of the insulating substrate 5 include an insulating substrate on which a semiconductor element 71 is mounted and wiring and terminals for electrically connecting the semiconductor element 71 and the outside are provided.

  Specifically, flexible substrates such as polyester copper-clad film substrates, polyimide copper-clad film substrates, aramid copper-clad film substrates, glass-based copper-clad laminates such as glass cloth and epoxy copper-clad laminates, and glass nonwoven fabrics -Composite copper-clad laminates such as epoxy copper-clad laminates, heat-resistant and thermoplastic substrates such as polyetherimide resin substrates, polyetherketone resin substrates, polysulfone resin substrates, alumina substrates, aluminum nitride substrates And ceramic substrates such as silicon carbide substrates, bismaleimide-triazine (BT) substrates, and the like.

Instead of the insulating substrate 5, a lead frame or the like may be used.
Next, as shown in FIG. 2 (f), the picked-up pieces 83 are placed on the insulating substrate 5.

  [4-2] Next, as shown in FIG. 2G, the pieces 83 placed on the insulating substrate 5 are heated and pressure-bonded. As a result, the semiconductor element 71 and the insulating substrate 5 are bonded (die bonding) via the adhesive layer 31 (fourth step).

  As conditions for heating and pressure bonding, for example, the heating temperature is preferably about 100 to 300 ° C, and more preferably about 100 to 200 ° C. Further, the pressure bonding time is preferably about 1 to 10 seconds, and more preferably about 1 to 5 seconds.

  Moreover, you may heat-process after that. The heating conditions in this case are such that the heating temperature is preferably about 100 to 300 ° C., more preferably about 150 to 250 ° C., and the heating time is preferably about 1 to 240 minutes, more preferably about 10 to 60 minutes. The

  Thereafter, a terminal (not shown) of the semiconductor element 71 and a terminal (not shown) on the insulating substrate 5 are electrically connected by a wire 84. For this connection, instead of the wire 84, a conductive paste, a conductive film, or the like may be used.

  Then, the individual pieces 83 and the wires 84 placed on the insulating substrate 5 are covered with a resin material to form a mold layer 85. Examples of the resin material constituting the mold layer 85 include various mold resins such as an epoxy resin.

  Further, a semiconductor device as shown in FIG. 2 (h) in which a semiconductor element 71 is accommodated in a package by bonding a ball electrode 86 to a terminal (not shown) provided on the lower surface of the insulating substrate 5. 100 is obtained.

  According to the method as described above, in the third step, the adhesive layer 31 is picked up in the state where the adhesive layer 31 is attached to the semiconductor element 71, that is, in the state of the piece 83. Can be used for bonding to the insulating substrate 5 as they are. For this reason, it is not necessary to separately prepare an adhesive or the like, and the manufacturing efficiency of the semiconductor device 100 can be further increased.

  As described above, the semiconductor film 10 is laminated with the semiconductor wafer 7, and then the semiconductor element 71 and the adhesive layer 31 obtained in the state after the semiconductor wafer 7 and the adhesive layer 3 are separated into pieces. The adhesion force of the individual piece 83 formed by the lamination is measured, the adhesion force of the edge portion of the individual piece 83 is defined as a (N / 10 mm), and the adhesion force of the central portion (part other than the edge portion) of the individual piece 83 is defined as b. When (N / 10mm), it is preferable that a / b is configured to be 1 to 4, more preferably about 1 to 3, and about 1 to 2. More preferably, the configuration is as follows. Thereby, it is possible to reliably suppress the occurrence of defects such as cracks and chips in the semiconductor element 71 during pickup, and the pickup performance of the piece 83 can be further improved.

  The adhesion force a and the adhesion force b are measured in detail as follows. FIG. 4 is a diagram (longitudinal sectional view) for explaining a method for measuring the adhesion between the first adhesive layer 1 and the adhesive layer 3.

  First, after laminating the semiconductor film 10 and the semiconductor wafer 7 to obtain the laminated body 8, the lamination before performing the third step in a state after the semiconductor wafer 7 is separated into 10 mm × 10 mm squares. A strip-shaped adhesive film 87 having a width of 1 cm is attached to the upper surface of the body 8 at 23 ° C. (room temperature) (see FIG. 4A).

  Next, at 23 ° C. (room temperature), as shown in FIG. 4B, the first adhesive layer 1, the second adhesive layer 2, and the support film 4 are peeled from the laminate 8 at a peeling angle of 90 ° and a pulling speed of 50 mm / min. Remove with. At this time, the magnitude of the tensile load (unit N) applied to the first adhesive layer 1, the second adhesive layer 2, and the support film 4 while peeling off the first adhesive layer 1, the second adhesive layer 2, and the support film 4 is determined. taking measurement. The average value of the tensile load applied to the first adhesive layer 1, the second adhesive layer 2, and the support film 4 when the edge E of the piece 83 moves away from the first adhesive layer 1 corresponds to “adhesion force a”. 4C, when the central portion (portion other than the edge portion) C of the piece 83 is separated from the first adhesive layer 1, the first adhesive layer 1, the second adhesive layer 2, and the support film 4 are provided. The average value of the tensile load applied to the film corresponds to “adhesion force b”.

  That is, according to the film for semiconductor 10, even in the state of FIG. 4B (the state where the edge E of the piece 83 is about to be separated from the first adhesive layer 1), the state of FIG. Even in the state where the central portion C of the piece 83 is about to be separated from the first adhesive layer 1, the difference in the magnitude of the tensile load applied to the first adhesive layer 1, the second adhesive layer 2, and the support film 4 Therefore, even when the semiconductor element 71 is warped as shown in FIG. 4C, the degree of the warpage can be minimized. As a result, problems such as cracks and chipping of the semiconductor element 71 can be minimized.

  Here, in general, when a flat plate-like piece such as the above-described piece 83 is peeled off, the edge contact force is greater than the contact force at the center (portion other than the edge). There is a tendency. This is largely due to the following reasons.

  One is that at the edge E of the piece 83, the component in the first adhesive layer 1 and the component in the second adhesive layer 2 crawl up on the end face of the piece 83, and so on, until the end face of the piece 83 is reached. This contributes to the close contact with the first adhesive layer 1. For this reason, compared with the center part C, it is mentioned that an adhesive force becomes large easily.

  One is that when the notch 81 reaches the support film 4, the support film 4 is scraped, and the shavings generated thereby are the cause. It is considered that these shavings cause a local increase in the adhesion force of the edge E by being caught on the end surface of the piece 83 when the piece 83 is peeled off.

  On the other hand, since the present invention includes the first adhesive layer as described above, problems such as cracking and chipping of the semiconductor element 71 can be minimized.

  Note that the edge portion E of the piece 83 refers to a region (see FIG. 4) that is 10% or less of the width of the semiconductor element 71 from the outer edge of the semiconductor element 71. On the other hand, the central portion C of the piece 83 refers to a region other than the edge E (see FIG. 4). That is, when the shape of the semiconductor element 71 is, for example, a 10 mm square in plan view, a region 1 mm wide from the outer edge is the edge E, and the remaining region is the center C.

  Moreover, it is preferable that the contact | adhesion power a measured when peeling the edge E of the piece 83 from the 1st adhesion layer 1 is 1N / 10mm or less, 0.01N / 10mm or more, 0.5N / 10mm The following is more preferable. As a result, the pick-up property of the individual piece 83 is particularly improved, and it is possible to prevent the semiconductor element 71 from suffering defects such as cracks, chips and burrs during pick-up. As a result, the highly reliable semiconductor device 100 can be finally manufactured with a high yield.

  Moreover, it is preferable that the contact | adhesion power b of the center part C (parts other than the edge part E) of the piece 83 exists in the range of the contact | adhesion power of the 1st adhesion layer 1 and the contact bonding layer 3 mentioned above, On that, , Preferably about 0.01 to 0.5 N / 10 mm, more preferably about 0.03 to 0.25 N / 10 mm. When the adhesion force b is within the above range, the pick-up property of the individual piece 83 is particularly improved, and it is possible to prevent the semiconductor element 71 from being broken, chipped, or burred during pick-up. As a result, the highly reliable semiconductor device 100 can be finally manufactured with a high yield.

  In particular, when the thickness of the semiconductor wafer 7 is thin (for example, 200 μm or less), the effect of preventing the above-described problems occurring in the semiconductor element 71 becomes remarkable by setting the adhesion force b within the above range.

  Moreover, it is preferable that the elasticity modulus in 23 degreeC of the 1st adhesion layer 1 is about 0.5-4.0 GPa, and it is more preferable that it is about 0.5-2.0 GPa. While the first pressure-sensitive adhesive layer 1 having such an elastic modulus has moderately low adhesiveness, the fluidity and flowability of the components can be relatively suppressed, so that a cut 81 is formed in the first pressure-sensitive adhesive layer 1. Even so, it is possible to achieve both improvement in pick-up property and prevention of problems due to leaching of substances from the first adhesive layer 1. The elastic modulus can be measured by a general tensile test or the like.

In addition, in order for the semiconductor film 10 to exhibit the above-described characteristics, the cross-sectional area of the portion on the tip side of the interface between the adhesive layer 3 and the first adhesive layer 1 in the single cut 81 is a dicing blade. Although it differs depending on the thickness of 82 and the thickness of each adhesive layer 1 and 2, it is preferably about ^{5 to} 300 (× 10 ⁻⁵ mm ² ), and about 10 to 200 (× 10 ⁻⁵ mm ² ). More preferably. By setting the cross-sectional area of the portion of the notch 81 within the above range, the components in the first adhesive layer 1 and the components in the second adhesive layer 2 ooze out, and generation of shavings from the support film 4 Can be suppressed. As a result, the difference in adhesion between the edge portion and the central portion of the semiconductor element 71 is optimized, and problems such as cracking and chipping of the semiconductor element 71 are further reduced.

  In addition, although FIG. 1 demonstrated the case where the notch 81 was formed so that a front-end | tip may reach the support film 4, FIG. 5 demonstrated the case where the notch 81 is formed so that a front-end | tip may remain in the 1st adhesion layer 1. FIG. To do.

  FIG. 5 is a view (longitudinal sectional view) for explaining another embodiment of the method for manufacturing a semiconductor device of the present invention. In the following description, the upper side in FIG. 5 is referred to as “upper” and the lower side is referred to as “lower”.

  Hereinafter, FIG. 5 will be described, but the description will be centered on differences from FIG. 1, and description of similar matters will be omitted. In FIG. 5, the same components as those in FIG. 1 are denoted by the same reference numerals as those in FIG.

  In FIG. 5, the notch 81 is formed so that the tip remains in the first adhesive layer 1. When the tip of the notch 81 is thus retained in the first adhesive layer 1, the components of the second adhesive layer 2 are prevented from oozing out around the adhesive layer 3 and around the semiconductor wafer 7 through the notch 81. Is done. As a result, the exuding substance unintentionally increases the adhesion force between the adhesive layer 3 and the first adhesive layer 1 (particularly the adhesion force of the edge E), and hinders the pickup of the individual piece 83. Can be prevented. Furthermore, it is possible to prevent the exuded substance from causing deterioration or deterioration of the semiconductor element 71.

  Such exudation of the component inevitably causes the second adhesive layer 2 to be more flexible than the first adhesive layer 1 because the adhesiveness of the second adhesive layer 2 is stronger than the adhesiveness of the first adhesive layer 1. Therefore, the substance contained in the second adhesive layer 2 is considered to be a phenomenon caused by the fact that the fluidity and the outflow property are higher than those of the first adhesive layer 1. That is, as in this embodiment, the adhesive layer is composed of a plurality of layers, and the adhesive layer on the support film 4 side (in FIG. 5, the first adhesive layer 1 in FIG. 5) (the adhesive layer 3 side in FIG. 5). When the adhesiveness of the second adhesive layer 2) is strong, as shown in FIG. 5, it is particularly effective to prevent the above-mentioned problem to keep the tip of the cut 81 in the first adhesive layer 1.

  Further, in the present embodiment, the semiconductor wafer 7 and the adhesive layer 3 are surely separated into pieces by retaining the tip of the cut 81 in the first adhesive layer 1, while the first adhesive layer 1 and the second adhesive layer 2 is not singulated. Therefore, when picking up the piece 83 in the third step, the first adhesive layer 1 and the second adhesive layer 2 should be left on the support film 4 side, but unintentionally stuck to the piece 83 side. Picking up in a state can be prevented. This is because, since the first adhesive layer 1 and the second adhesive layer 2 are not separated into individual pieces, the connection in the surface direction is maintained, so that the adhesion between the first adhesive layer 1 and the second adhesive layer 2 is maintained. This is because a decrease in the adhesion between the second adhesive layer 2 and the support film 4 is prevented. That is, the adhesive force between the first adhesive layer 1 and the second adhesive layer 2 and the adhesive force between the second adhesive layer 2 and the support film 4 have sufficient resistance against the upward pulling force in the pickup. Because.

  Moreover, as above-mentioned, since the fall of the adhesive force of the 1st adhesion layer 1 and the 2nd adhesion layer 2 and the adhesion force of the 2nd adhesion layer 2 and the support film 4 is prevented, it is the 1st adhesion. Even if the adhesion force between the layer 1 and the adhesive layer 3 is increased, the deterioration of the pickup property is suppressed. That is, in the adhesive force between the first adhesive layer 1 and the adhesive layer 3, the allowable range that enables good pickup can be further expanded, and thus the ease of manufacturing the semiconductor film 10 and the semiconductor element 71 after mounting. There is also an advantage that adhesion between the insulating substrate 5 and the insulating substrate 5 is improved.

In the method shown in FIG. 5, the same operation and effect as the method shown in FIG. 1 can be obtained.
As mentioned above, although the film for semiconductors of this invention and the manufacturing method of a semiconductor device were demonstrated based on embodiment of illustration, this invention is not limited to these.

  For example, the package form is a CSP (Chip Size Package) such as BGA (Ball Grid Array) or LGA (Land Grid Array), a surface mount type package such as TCP (Tape Carrier Package), or DIP (Dual Inline Package). Further, it may be an insertion type package such as PGA (Pin Grid Array), and is not particularly limited.

  In each of the above embodiments, the case where the piece 83 is mounted on the insulating substrate 5 has been described. However, the piece 83 may be mounted on another semiconductor element. That is, the method for manufacturing a semiconductor device of the present invention can also be applied to manufacturing a chip stack type semiconductor device in which a plurality of semiconductor elements are stacked. Thereby, there is no possibility that shavings or the like enter between the semiconductor elements, and a highly reliable chip stack type semiconductor device can be manufactured with a high manufacturing yield.

  When the semiconductor film of the present invention is subjected to dicing, the depth of the notch 81 is not particularly limited as long as the notch 81 capable of separating the semiconductor wafer 7 and the adhesive layer 3 is formed.

  Moreover, in the method for manufacturing a semiconductor device of the present invention, an optional step can be added as necessary.

Hereinafter, specific examples of the present invention will be described.
1. Production of film for semiconductor (Example 1)
<1> Formation of first adhesive layer 100 parts by mass of a copolymer as a base resin having a weight average molecular weight of 300,000 obtained by copolymerizing 30% by mass of 2-ethylhexyl acrylate and 70% by mass of vinyl acetate 60 parts by mass of a pentafunctional acrylate monomer having a molecular weight of 700 as an energy ray curable resin, 5 parts by mass of 2,2-dimethoxy-2-phenylacetophenone as an energy ray curing initiator, and tolylene as a crosslinking agent 3 parts by mass of isocyanate (Coronate T-100, manufactured by Nippon Polyurethane Industry Co., Ltd.) was applied to a polyethylene terephthalate film having a thickness of 38 μm which was subjected to a release treatment so that the thickness after drying was 10 μm. And dried at 80 ° C. for 5 minutes. And the ultraviolet-ray 500mJ / cm < ² > was irradiated with respect to the obtained coating film, and the 1st adhesion layer was formed into a film on the polyethylene terephthalate film.
In addition, the elastic modulus in 23 degreeC of the obtained 1st adhesion layer was 1.0 GPa.

<2> Formation of Second Adhesive Layer 100 parts by mass of a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 70% by mass of butyl acrylate and 30% by mass of 2-ethylhexyl acrylate, and tolylene 3 parts by mass of isocyanate (Coronate T-100, manufactured by Nippon Polyurethane Industry Co., Ltd.) was applied to a polyethylene terephthalate film having a thickness of 38 μm which was subjected to a release treatment so that the thickness after drying was 10 μm. And dried at 80 ° C. for 5 minutes. And the 2nd adhesion layer was formed into a film on the polyethylene terephthalate film. Thereafter, a polyethylene sheet having a thickness of 100 μm was laminated as a support film.

<3> Formation of Adhesive Layer Acrylate ester copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl methacrylate copolymer methyl ethyl ketone (MEK) dissolved product, manufactured by Nagase ChemteX Corporation, SG-708 −6, Tg: 6 ° C., weight average molecular weight: 500,000) 100 parts by mass and phenoxy resin (JER1256, weight average molecular weight: 50,000, manufactured by Mitsubishi Chemical Corporation) 9.8 parts by mass And 90.8 parts by mass of spherical silica (SC1050, average particle size: 0.3 μm, manufactured by Admatechs) added as a filler, and γ-glycidoxypropyltrimethoxysilane added as a coupling agent (KBM403E, manufactured by Shin-Etsu Chemical Co., Ltd.) 1.1 parts by mass and phenol resin (P -53647, hydroxyl equivalent 104 g / OH group, and Sumitomo Bakelite Co., Ltd.) 0.1 parts by weight, and dissolved in methyl ethyl ketone to obtain a resin solid content of 20% by weight of the resin varnish.

  Next, the obtained resin varnish was applied to a polyethylene terephthalate film (manufactured by Teijin DuPont Films Co., Ltd., product number Purex A43, thickness 38 μm) with a comma coater, and then dried at a temperature of 150 ° C. for 3 minutes. An adhesive layer having a thickness of 10 μm was formed on the terephthalate film.

<4> Manufacture of a film for semiconductor A film in which a first adhesive layer is formed and a film in which an adhesive layer is formed are laminated (laminated) so that the first adhesive layer and the adhesive layer are in contact with each other. The layer-side polyethylene terephthalate film was peeled off to obtain a laminate.

  Next, using a roll-shaped die, the first adhesive layer and the adhesive layer are punched out to be larger than the outer diameter of the semiconductor wafer and smaller than the inner diameter of the wafer ring, and then unnecessary portions are removed, and the second laminated body is removed. Got.

  Further, the polyethylene terephthalate film on one surface side of the second adhesive layer is peeled off. And these were laminated | stacked so that the 1st adhesion layer and 2nd adhesion layer of a said 2nd laminated body might contact | connect. Thereby, the film for semiconductors obtained by laminating five layers of the polyethylene sheet (support film), the second adhesive layer, the first adhesive layer, the adhesive layer, and the polyethylene terephthalate film in this order was obtained.

(Examples 2 to 4)
A film for semiconductor was produced in the same manner as in Example 1 except that the first resin composition constituting the first adhesive layer was one having the structure shown in Table 1.

(Comparative Example 1)
A semiconductor film was produced in the same manner as in Example 1 except that the addition amount of the pentafunctional acrylate monomer in the first adhesive layer was changed to 0 parts by mass.

(Comparative Example 2)
A film for semiconductor was produced in the same manner as in Example 1 except that 2,2-dimethoxy-2-phenylacetophenone in the first adhesive layer was changed to 0 part by mass.

(Comparative Example 3)
A semiconductor film was produced in the same manner as in Example 1 except that in the formation of the first adhesive layer, ultraviolet irradiation was not performed.

2. Manufacturing of Semiconductor Device First, an 8-inch silicon wafer having a thickness of 100 μm was prepared.

  And the polyethylene terephthalate film was peeled from the film for semiconductors of each Example and each comparative example, and the silicon wafer was laminated | stacked on the peeling surface at 60 degreeC. Thereby, the laminated body formed by laminating five layers of the film for semiconductor and the silicon wafer in this order was obtained.

  Next, the laminate was diced (cut) from the silicon wafer side using a dicing saw (DFD6360, manufactured by DISCO Corporation) under the following conditions. As a result, the silicon wafer was singulated, and a semiconductor element having the following dicing size was obtained.

<Dicing conditions>
・ Dicing size: 10 mm × 10 mm square ・ Dicing speed: 50 mm / sec
・ Spindle speed: 40,000 rpm
・ Dicing depth: 0.150 mm (the amount of cut from the surface of the silicon wafer)
・ Dicing blade thickness: 15μm
・ Cross sectional area: 60.0 × 10 ⁻⁵ mm ² (cross sectional area at the tip side from the interface between the adhesive layer and the first adhesive layer)

  In addition, the front end of the cut formed by this dicing reached the inside of the support film 4.

  Next, one of the semiconductor elements was pushed up with a needle from the back surface of the semiconductor film, and the pushed up surface of the semiconductor element was pulled up while being adsorbed by a collet of a die bonder. As a result, individual pieces of the semiconductor element and the adhesive layer were picked up.

Next, the picked-up piece is applied to a bismaleimide-triazine resin substrate (circuit level difference: 5 to 10 μm) coated with a solder resist (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: AUS308) at a temperature of 130 ° C. and a load of 5 N. For 1.0 second and die bonded.
Next, the semiconductor element and the resin substrate were electrically connected by wire bonding.

  Then, the semiconductor element and the bonding wire on the resin substrate were sealed with a sealing resin EME-G760 (trade name, manufactured by Sumitomo Bakelite Co., Ltd.), and further subjected to a heat treatment at a temperature of 175 ° C. for 2 hours. Thereby, the sealing resin was cured to obtain a semiconductor device.

3. Measurement of adhesion strength of semiconductor element (piece) In order to evaluate the pick-up property of the semiconductor element, the 90 ° peel strength (adhesion force) of the semiconductor element (individual piece) was measured for the laminated body formed with the cut produced in the manufacture of the semiconductor device, and the central part of the individual piece was measured. The average value b of peel strength and the average value a of peel strength at the edge of each piece were determined, and the results and a / b are shown in Table 1.

  The peel strength was obtained by attaching a 1 cm wide strip-shaped adhesive film to the upper surface of the semiconductor element at 23 ° C. (room temperature), and then having a peel angle of 90 ° from the support film side at 23 ° C. (room temperature). It was set as the load at the time of peeling at a pulling speed of 50 mm / min.

4). Evaluation of Dicing Property and Pickup Property The dicing property in each example and comparative example was good. That is, no chipping or peeling of the semiconductor element occurred during dicing.

In each of the examples, it was found that the pickup can be stably performed. For this reason, in each Example, it became clear that problems, such as a crack and a chip | tip of a semiconductor element by a large load being locally applied, can be suppressed reliably. Moreover, when the edge part of the semiconductor element after pick-up was observed in each Example, adhesion of foreign materials, such as a burr | flash and shavings, was not recognized. Further, after the semiconductor film was left at room temperature for 1 month, the dicing property and the pickup property were evaluated again, and the same evaluation was obtained.
On the other hand, in the comparative example, a satisfactory result was not obtained.

DESCRIPTION OF SYMBOLS 1 1st adhesion layer 11 Outer periphery 2 2nd adhesion layer 21 Outer peripheral part 3, 31 Adhesive layer 4 Support film 41 Outer peripheral part 4a, 4b Base material 5 Insulating substrate 61-64 Laminated body 7 Semiconductor wafer 71 Semiconductor element 8 Laminated body 81 Notch 82 Dicing blade 83 pieces 84 Wire 85 Mold layer 86 Ball-shaped electrode 87 Adhesive film 9 Wafer ring 10 Film for semiconductor 100 Semiconductor device C Central part E Edge part

Claims (8)

The adhesive layer, the first adhesive layer, the second adhesive layer, and the support film are laminated in this order, and a semiconductor wafer is laminated on the surface of the adhesive layer opposite to the first adhesive layer. A semiconductor film used when the semiconductor wafer and the adhesive layer are cut into individual pieces in a state, and the obtained individual pieces are picked up from the support film,
Said first adhesive layer, Ri layer der formed by causing a layer formed of a resin composition comprising a base resin and a radiation-curable resin and energy curing initiator is cured by energy ray irradiation,
The elastic film at 23 ° C. of the first adhesive layer is 0.5 to 4.0 GPa .   The said resin composition mix | blends 50-150 mass parts of energy-beam curable resins, 1-10 mass parts of energy-beam hardening initiators, and 0.1-5 mass parts of crosslinking agents with respect to 100 mass parts of base resins. The film for semiconductors of Claim 1 formed.   The film for a semiconductor according to claim 1, wherein an outer peripheral edge of the adhesive layer and an outer peripheral edge of the first adhesive layer are respectively located on an inner side than an outer peripheral edge of the second adhesive layer.   4. The film for semiconductor according to claim 1, wherein an elastic modulus at 23 ° C. of the second adhesive layer is smaller than an elastic modulus at 23 ° C. of the first adhesive layer. The film for a semiconductor according to any one of claims 1 to 4 , wherein an adhesion force measured when the edge of the individual piece is peeled from the first adhesive layer is 1 N / 10 mm or less. The 1st process of preparing the laminated body formed by laminating | stacking the said film for semiconductors and the said semiconductor wafer so that the said contact bonding layer and semiconductor wafer of the film for semiconductors in any one of Claim 1 thru | or 5 may contact | connect. When,
A second step of obtaining a plurality of semiconductor elements by dividing the semiconductor wafer into pieces by providing a cut in the stacked body from the semiconductor wafer side;
And a third step of picking up the semiconductor element. The method of manufacturing a semiconductor device according to claim 6 , wherein the notch is provided so that a deepest portion thereof is located in the first adhesive layer. One wherein the notch in the cross-sectional area of the distal end portion than the interface between the adhesive layer and the first adhesive layer, a ^{5 × 10 -5 ~300 × 10 -5} mm 2 is to claim 6 or 7 The manufacturing method of the semiconductor device of description.

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