JP2012060037A - Film for semiconductor, semiconductor wafer singulation method and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film for a semiconductor that can improve pickup property and prevent the occurrence of a failure and manufacture a highly reliable semiconductor device, and to provide a semiconductor device manufacturing method using the film for the semiconductor.SOLUTION: A film 10 for a semiconductor is formed by lamination of an adhesion layer 3 and a support film 4, and is used in a manner such that a semiconductor wafer 7 is bonded to a face of the adhesion layer 3 on the side opposite to the support film 4, a face of the support film 4 on the side opposite to the adhesion layer 3 is loaded on a workpiece table 302, and the semiconductor wafer 7 is singulated by cutting the semiconductor wafer 7 with the adhesion layer 3, and obtained individual pieces 83 are picked up from the support film 4. The adhesion layer 3 has a shape such that an outer peripheral edge 32 lies outside an outer peripheral edge 3021 of the workpiece table 302.

Description

  The present invention relates to a semiconductor film, a method for dividing a semiconductor wafer, and a method for manufacturing a semiconductor device.

  In response to the recent increase in functionality of electronic devices and expansion to mobile applications, there is an increasing demand for higher density and higher integration of semiconductor devices, and IC packages are increasing in capacity and density.

  In these semiconductor device manufacturing methods, first, an adhesive sheet is attached to a semiconductor wafer made of silicon, gallium, arsenic, etc., and the semiconductor wafer is separated into individual semiconductors by a dicing process while fixing the periphery of the semiconductor wafer with a wafer ring. The device is cut and separated (divided into individual pieces). Next, an expanding process for separating the individual semiconductor elements separated from each other and a pickup process for picking up the separated semiconductor elements are performed. Thereafter, the picked-up semiconductor element is transferred to a die bonding process for mounting on a metal lead frame or a substrate (for example, a tape substrate, an organic hard substrate, etc.). Thereby, a semiconductor device is obtained.

  In the die bonding process, the picked-up semiconductor element is stacked on another semiconductor element, whereby a chip stack type semiconductor device in which a plurality of semiconductor elements are mounted in one package can be obtained.

  As an adhesive sheet used in such a method for manufacturing a semiconductor device, one obtained by laminating a first adhesive layer and a second adhesive layer in this order on a base film is known. (For example, refer to Patent Document 1).

  This adhesive sheet is subjected to the dicing process described above in a state of being attached to a semiconductor wafer. In the dicing step, the semiconductor wafer and the two adhesive layers are separated into a plurality of parts by providing a cut so that the tip of the dicing blade reaches the base film. In the pickup process, peeling occurs at the interface between the base film and the two adhesive layers, and the separated semiconductor element is picked up together with the separated two adhesive layers. Is done. The two adhesive layers picked up are responsible for adhesion between the separated semiconductor element and the metal lead frame (or substrate) in the die bonding step.

  By the way, in the dicing process, in general, pure water or cutting water to which an additive has been added is sprayed to the dicing blade for the purpose of cooling the dicing blade and the semiconductor wafer, removing cutting waste, and the like.

  However, conventionally, in the dicing process, the semiconductor element is unintentionally peeled off by the pressure of the cutting water described above (in the adhesive sheet of Patent Document 1, at the interface between the base film and the two adhesive layers). In some cases, a phenomenon (so-called chip skipping) occurs.

  If the adhesion between the two adhesive layers and the base film is increased in order to prevent this chip jumping, the pick-up process can be performed when the separated semiconductor element is picked up. Peeling easily and reliably at the interface where peeling should occur without causing damage such as cracks or chips (in the adhesive sheet of Patent Document 1, the interface between the base film and the two adhesive layers) There has been a problem that the characteristic to be generated (so-called pickup property) cannot be made sufficient.

  Thus, conventionally, there has been a problem that it is difficult to achieve both improvement in pick-up property and prevention of chip skipping.

JP 2004-43761 A

  An object of the present invention is to provide a film for semiconductor, a method for separating a semiconductor wafer, and a method for manufacturing a semiconductor device, which can prevent chip skipping during dicing and improve pickup properties.

Such an object is achieved by the present inventions (1) to (12) below.
(1) An adhesive layer and a support film are laminated, and a semiconductor wafer is attached to the surface of the adhesive layer opposite to the support film, and the surface of the support film opposite to the adhesive layer is a workpiece. It is placed on a table, and in this state, the semiconductor wafer and the adhesive layer are cut into individual pieces, and the semiconductor film used when picking up the obtained individual pieces from the support film,
The film for a semiconductor according to claim 1, wherein the adhesive layer has a shape such that an outer peripheral edge thereof is positioned outside an outer peripheral edge of the work table.

  (2) The film for a semiconductor according to (1), wherein an adhesive layer is provided between the adhesive layer and the support film.

  (3) The film for a semiconductor according to (2), wherein an outer peripheral edge of the adhesive layer coincides with or is located on the inner side of the outer peripheral edge of the adhesive layer.

  (4) The said adhesive layer is a film for semiconductors as described in said (2) or (3) comprised by the several layer which has a mutually different characteristic.

  (5) The pressure-sensitive adhesive layer is in contact with the first pressure-sensitive adhesive layer in contact with the adhesive layer and a surface of the first pressure-sensitive adhesive layer on the side opposite to the adhesive layer, and is higher in adhesiveness than the first pressure-sensitive adhesive layer. The film for semiconductor as described in said (4) which has an adhesion layer.

  (6) The film for a semiconductor according to (5), wherein an outer peripheral edge of the adhesive layer and an outer peripheral edge of the first adhesive layer are respectively located on an inner side than an outer peripheral edge of the second adhesive layer.

  (7) The film for a semiconductor according to any one of (1) to (6), wherein an outer peripheral edge of the support film is located outside an outer peripheral edge of the adhesive layer.

  (8) The film for a semiconductor according to (2), wherein an ultraviolet ray is irradiated in advance on the surface of the pressure-sensitive adhesive layer on the surface of the adhesive layer on which the semiconductor wafer is laminated prior to lamination with the semiconductor wafer.

(9) The adhesive film side surface of the semiconductor film according to any one of (1) to (8) is attached to a semiconductor wafer to obtain a laminate, and the laminate is provided on the support film side. Placing the surface on the worktable;
A method of dividing a semiconductor wafer, comprising: cutting the semiconductor wafer into pieces by forming a cut in the stacked body from the semiconductor wafer side.

(10) a step of preparing a film for a semiconductor in which an adhesive layer and a support film are laminated;
A step of attaching a semiconductor wafer to the surface of the semiconductor film on the adhesive layer side to obtain a laminate, and placing the surface of the laminate on the support film side on a work table;
Cutting the semiconductor wafer into individual pieces by forming a cut in the laminate from the semiconductor wafer side while spraying cutting water,
A semiconductor wafer singulation method, wherein the cutting water is sprayed so that a center line of the cutting water passes inside an outer peripheral edge of the adhesive layer.

(11) The adhesive film side surface of the semiconductor film according to any one of (1) to (8) is attached to a semiconductor wafer to obtain a laminate, and the laminate is provided on the support film side. Placing the surface on the worktable;
Cutting the semiconductor wafer into pieces by forming a cut in the laminate from the semiconductor wafer side; and
And a step of picking up the obtained piece from the support film.

(12) a step of preparing a film for a semiconductor in which an adhesive layer, an adhesive layer, and a support film are laminated in this order;
Bonding the surface of the semiconductor film on the adhesive layer side to a semiconductor wafer to obtain a laminate, and placing the surface of the laminate on the support film side on a work table;
Cutting the semiconductor wafer into individual pieces by forming a cut in the laminate from the semiconductor wafer side while spraying cutting water,
The method of manufacturing a semiconductor device, wherein the cutting water is sprayed so that a center line of the cutting water passes inside an outer peripheral edge of the adhesive layer.

  According to the present invention, since the outer peripheral edge of the adhesive layer is located outside the outer peripheral edge of the work table, in the dicing process, the cutting water can be sprayed so that the center line does not pass through the outer peripheral edge of the adhesive layer. it can. Therefore, it is possible to prevent the outer peripheral edge of the adhesive layer from being lifted by the cutting water pressure. As a result, in the dicing step, unintended peeling at the interface with the layer adjacent to the support film side of the adhesive layer can be prevented.

  From such a thing, in this invention, a dicing process can be performed, suppressing the adhesive force with the layer adjacent to the support film side of an adhesive layer. Therefore, the pickup property can be improved.

It is a figure (longitudinal sectional view) for demonstrating 1st Embodiment of the film for semiconductors of this invention, and the manufacturing method of the semiconductor device of this invention. It is a figure (longitudinal sectional view) for demonstrating 1st Embodiment of the film for semiconductors of this invention, and the manufacturing method of the semiconductor device of this invention. It is a figure (longitudinal sectional view) for demonstrating 1st Embodiment of the film for semiconductors of this invention, and the manufacturing method of the semiconductor device of this invention. It is a figure for demonstrating the method to manufacture the film for semiconductors of this invention. It is a figure for demonstrating the dicing process (semiconductor wafer individualization method) shown in FIG.1 (c). It is a figure for demonstrating the dicing process (semiconductor wafer individualization method) shown in FIG.1 (c). It is a figure for demonstrating the dicing process (semiconductor wafer individualization method) shown in FIG.1 (c). It is a figure (longitudinal sectional view) for demonstrating 2nd Embodiment of the film for semiconductors of this invention, and the manufacturing method of the semiconductor device of this invention.

  Hereinafter, a semiconductor film, a method for separating a semiconductor wafer, and a method for manufacturing a semiconductor device according to the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

<First Embodiment>
First, a first embodiment of a semiconductor film, a semiconductor wafer singulation method, and a semiconductor device manufacturing method of the present invention will be described.

  1 to 3 are diagrams (longitudinal sectional views) for explaining a first embodiment of a semiconductor film of the present invention and a method of manufacturing a semiconductor device of the present invention, and FIG. 4 is a diagram for a semiconductor of the present invention. FIGS. 5 to 7 are diagrams for explaining a method for manufacturing a film, and FIGS. 5 to 7 are diagrams for explaining a dicing process (a method for dividing a semiconductor wafer) shown in FIG. 1C. In the following description, the upper side in FIGS. 1 to 6 is referred to as “upper” and the lower side is referred to as “lower”.

[Semiconductor film]
A semiconductor film 10 shown in FIG. 1 has a support film 4, a first adhesive layer 1, a second adhesive layer 2, and an adhesive layer 3. More specifically, the semiconductor film 10 is obtained by laminating the second adhesive layer 2, the first adhesive layer 1, and the adhesive layer 3 on the support film 4 in this order.

  As will be described in detail later, the semiconductor film 10 is obtained by attaching the semiconductor wafer 7 to the upper surface of the adhesive layer 3, and cutting (dicing) the semiconductor wafer 7 and the adhesive layer 3 in this state to obtain individual pieces. The obtained piece (a piece 83 formed by laminating a semiconductor element 71 and an adhesive layer 31 described later) is picked up from the support film 4. Such a semiconductor film 10 has a function of supporting the semiconductor wafer 7 when the semiconductor wafer 7 is diced into individual pieces. In addition, when the semiconductor film 10 picks up the separated semiconductor wafer 7 (semiconductor element 71 described later) and the adhesive layer 3 (adhesive layer 31 described later), the first adhesive layer 1 and the adhesive layer 3 It is a thing which peels selectively between. Such a semiconductor film 10 has a function of providing an adhesive (adhesive layer 31 to be described later) for bonding the picked-up semiconductor element 71 on the insulating substrate 5.

  As will be described in detail later, the surface of the support film 4 opposite to the adhesive layer 3 of the semiconductor film 10 is placed on the work table 302 during dicing (see FIGS. 5 to 7). In particular, the adhesive layer 3 has such a shape that the outer peripheral edge 32 is located outside the outer peripheral edge of the work table 302 (has a protruding portion 33). That is, for example, when the planar view shapes of the adhesive layer 3 and the work table 302 are each circular, the diameter of the adhesive layer 3 is larger than the diameter of the work table 302.

  Thereby, in the dicing process, unintentional peeling at the interface with the layer adjacent to the support film 4 side of the adhesive layer 3 (first adhesive layer 1 in the present embodiment) can be prevented. Therefore, the dicing process can be performed while suppressing the adhesive force between the adhesive layer 3 and the first adhesive layer 1. Therefore, the adhesive force between the adhesive layer 3 and the first pressure-sensitive adhesive layer 1 in the pickup process is also suppressed, and as a result, the pickup property can be improved.

  In the following, for convenience of explanation, the first adhesive layer 1, the second adhesive layer 2, the adhesive layer 3 and the support film 4 have a circular shape in plan view, and their centers in plan view are mutually centered. Although the case where they coincide with each other will be described, these shapes in plan view are not limited to circular shapes, and may be different from each other, and their centers may not coincide with each other in plan view. Also good.

  Further, the outer peripheral portion 41 of the support film 4 and the outer peripheral portion 21 of the second adhesive layer 2 exist outside the outer peripheral edge 11 of the first adhesive layer 1, respectively.

  Among these, the wafer ring 9 is attached to the outer peripheral portion 21. Thereby, the semiconductor wafer 7 is reliably supported.

Hereinafter, the configuration of each part of the semiconductor film 10 will be described in detail.
(First adhesive layer)
The first adhesive layer 1 is composed of a general adhesive. Specifically, the 1st adhesion layer 1 is comprised by the 1st resin composition containing an acrylic adhesive, a rubber-type adhesive, etc.

  Examples of the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, And a copolymer with styrene, acrylonitrile, etc.). Two or more of these resins may be mixed.

  Of these, one or more selected from the group consisting of methyl (meth) acrylate, ethylhexyl (meth) acrylate and butyl (meth) acrylate, and selected from hydroxyethyl (meth) acrylate and vinyl acetate Preferred are copolymers with one or more of the above. Thereby, control of adhesiveness and adhesiveness with the other party (adherent body) which the 1st adhesion layer 1 adheres becomes easy.

  In addition, the first resin composition includes urethane acrylate, acrylate monomer, polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate) in order to control adhesiveness (adhesiveness). Monomers and oligomers such as isocyanate compounds may be added.

  Further, in the first resin composition, when the first adhesive layer 1 is cured by ultraviolet rays or the like, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone as a photopolymerization initiator, Acetophenone compounds such as 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholinopropane-1, benzophenone compounds, benzoin compounds, benzoin isobutyl ether compounds, methyl benzoin benzoate compounds, benzoin Benzoic acid compounds, benzoin methyl ether compounds, benzylfinyl sulfide compounds, benzyl compounds, dibenzyl compounds, diacetyl compounds and the like may be added.

  Also, for the purpose of increasing adhesive strength and shear strength, tackifying rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic petroleum resin, etc. Materials and the like may be added.

  The average thickness of the first adhesive layer 1 is not particularly limited, but is preferably about 1 to 100 μm, more preferably about 3 to 50 μm. If the thickness is less than the lower limit value, it may be difficult to ensure sufficient adhesive strength. If the thickness exceeds the upper limit value, the characteristics are not significantly affected, and no advantage is obtained. When the thickness is within the above range, the first adhesive layer 1 having excellent dicing properties and pick-up properties can be obtained because it does not peel off particularly during dicing and can be peeled off relatively easily with a tensile load during pick-up. can get.

  In the present embodiment, the first adhesive layer 1 has a shape such that the outer peripheral edge 11 thereof coincides with the outer peripheral edge 32 of the adhesive layer 3 in plan view. That is, the diameter of the first adhesive layer 1 is equal to the diameter of the adhesive layer 3.

(Second adhesive layer)
The second adhesive layer 2 has higher adhesiveness than the first adhesive layer 1 described above. Thereby, the adhesive force of the second adhesive layer 2 to the first adhesive layer 1 and the support film 4 becomes larger than the adhesive force of the first adhesive layer 1 to the adhesive layer 3. Therefore, it is possible to cause peeling at a desired interface (that is, the interface between the first pressure-sensitive adhesive layer 1 and the adhesive layer 3) where peeling is to occur in a pickup process in manufacturing the semiconductor device 100 described later. Further, by increasing the adhesiveness of the second adhesive layer 2, in the second step of manufacturing the semiconductor device 100 described later, when the semiconductor wafer 7 is diced into individual pieces, The space between the wafer ring 9 and the wafer ring 9 is securely fixed. As a result, the positional deviation of the semiconductor wafer 7 is reliably prevented, and the dimensional accuracy of the semiconductor element 71 can be prevented from being lowered.

  As the second adhesive layer 2, the same material as the first adhesive layer 1 described above can be used. Specifically, the second adhesive layer 2 is composed of a second resin composition containing an acrylic adhesive, a rubber adhesive, and the like.

  Examples of the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, Copolymers with styrene, acrylonitrile, etc.) are used. Two or more kinds of these copolymers may be mixed.

  Of these, one or more selected from the group consisting of methyl (meth) acrylate, ethylhexyl (meth) acrylate and butyl (meth) acrylate, and selected from hydroxyethyl (meth) acrylate and vinyl acetate Preferred are copolymers with one or more of the above. Thereby, control of adhesiveness and adhesiveness with the other party (adhered body) which the 2nd adhesion layer 2 adheres becomes easy.

  In addition, the second resin composition includes urethane acrylate, an acrylate monomer, and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate) in order to control adhesiveness (adhesiveness). Monomers and oligomers such as isocyanate compounds may be added.

  Furthermore, you may add the photoinitiator similar to a 1st resin composition to a 2nd resin composition.

  Also, for the purpose of increasing adhesive strength and shear strength, tackifying rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic petroleum resin, etc. Materials and the like may be added.

  The average thickness of the second adhesive layer 2 is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 3 to 20 μm. If the thickness is less than the lower limit, it may be difficult to ensure sufficient adhesive force, and even if the thickness exceeds the upper limit, a particularly excellent effect cannot be obtained. In addition, since the second adhesive layer 2 is higher in flexibility than the first adhesive layer 1, the shape following property of the second adhesive layer 2 is ensured if the average thickness of the second adhesive layer 2 is within the above range. Thus, the adhesion of the semiconductor film 10 to the semiconductor wafer 7 can be further enhanced.

  In the present embodiment, the second adhesive layer 2 has such a shape that its outer peripheral edge 22 is positioned outside the outer peripheral edge 11 of the first adhesive layer described above. As a result, the second adhesive layer 2 is also in close contact with the outer peripheral edge of the first adhesive layer 1.

  The second adhesive layer 2 has a shape such that the outer peripheral edge 22 thereof coincides with the outer peripheral edge 42 of the support film 4 in plan view. That is, the diameter of the second adhesive layer 2 is equal to the diameter of the support film 4. Thereby, the support film 4 can be fixed to the wafer ring 9 through the second adhesive layer 2 in a dicing process described later.

(Adhesive layer)
The adhesive layer 3 is made of a third resin composition containing, for example, a thermoplastic resin and a thermosetting resin. Such a resin composition is excellent in film forming ability, adhesiveness, and heat resistance after curing.

  Among these, examples of the thermoplastic resin include polyimide resins such as polyimide resins and polyetherimide resins, polyamide resins such as polyamide resins and polyamideimide resins, acrylic resins, and phenoxy resins. Among these, acrylic resins are preferable. Since the acrylic resin has a low glass transition temperature, the initial adhesion of the adhesive layer 3 can be further improved.

  The acrylic resin means acrylic acid and its derivatives. Specifically, acrylic esters such as acrylic acid, methacrylic acid, methyl acrylate, and ethyl acrylate, and methacrylates such as methyl methacrylate and ethyl methacrylate. Examples thereof include polymers such as acid esters, acrylonitrile, and acrylamide, and copolymers with other monomers.

  Among acrylic resins, acrylic resins (particularly acrylic ester copolymers) having a compound having a functional group such as epoxy group, hydroxyl group, carboxyl group, nitrile group (copolymerization monomer component) are preferable. Thereby, the adhesiveness to adherends, such as semiconductor element 71, can be improved more. Specific examples of the compound having a functional group include glycidyl methacrylate having a glycidyl ether group, hydroxy methacrylate having a hydroxyl group, carboxy methacrylate having a carboxyl group, and acrylonitrile having a nitrile group.

  Further, the content of the compound having a functional group is not particularly limited, but is preferably about 0.5 to 40% by mass, more preferably about 5 to 30% by mass of the entire acrylic resin. . When the content is less than the lower limit, the effect of improving the adhesion may be reduced, and when the content exceeds the upper limit, the adhesive force is too strong and the effect of improving the workability may be reduced.

  The glass transition temperature Tg of the thermoplastic resin is not particularly limited, but is preferably −25 to 120 ° C., more preferably −20 to 60 ° C., and more preferably −10 to 50 ° C. Further preferred. If the glass transition temperature is less than the lower limit, the adhesive strength of the adhesive layer 3 may be increased and workability may be reduced. If the glass transition temperature exceeds the upper limit, the effect of improving the low temperature adhesiveness may be reduced.

  Further, the weight average molecular weight of the thermoplastic resin (particularly acrylic resin) is not particularly limited, but is preferably 100,000 or more, particularly preferably 150,000 to 1,000,000. When the weight average molecular weight is within the above range, the film formability of the adhesive layer 3 can be particularly improved.

  On the other hand, as the thermosetting resin, for example, a novolac type phenol resin such as a phenol novolak resin, a cresol novolak resin, a bisphenol A novolak resin, a phenol resin such as a resol phenol resin, a bisphenol type such as a bisphenol A epoxy resin and a bisphenol F epoxy resin. Epoxy resin, novolac epoxy resin, cresol novolac epoxy resin, etc. novolac epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, triazine nucleus-containing epoxy resin, Epoxy resins such as dicyclopentadiene-modified phenolic epoxy resins, urea (urea) resins, resins having a triazine ring such as melamine resins, Examples include polyester resins, bismaleimide resins, polyurethane resins, diallyl phthalate resins, silicone resins, resins having a benzoxazine ring, cyanate ester resins, and the like, and one or a mixture of two or more of these may be used. Good. Of these, epoxy resins or phenol resins are preferred. According to these resins, the heat resistance and adhesion of the adhesive layer 3 can be further improved.

  Further, the content of the thermosetting resin is not particularly limited, but is preferably about 1 to 400 parts by mass, more preferably about 3 to 300 parts by mass with respect to 100 parts by mass of the thermoplastic resin. . If the content exceeds the upper limit, chipping and cracking may occur, or the effect of improving the adhesion may be reduced.If the content is lower than the lower limit, the adhesive force is too strong and pickup failure is caused. This may occur or the effect of improving workability may be reduced.

  The third resin composition preferably further contains a curing agent (in particular, when the thermosetting resin is an epoxy resin, a phenolic curing agent).

  Examples of the curing agent include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylenediamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), diaminodiphenylsulfone ( DDS) and other aromatic polyamines, dicyandiamide (DICY), amine-based curing agents such as polyamine compounds containing organic acid dihydralazide, and the like, alicyclic acids such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA) Acid anhydride curing agents such as anhydrides (liquid acid anhydrides), trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), and benzophenone tetracarboxylic acid (BTDA), phenolic resins Phenolic Agents, and the like. Among these, a phenolic curing agent is preferable, and specifically, bis (4-hydroxy-3,5-dimethylphenyl) methane (common name: tetramethylbisphenol F), 4,4′-sulfonyldiphenol, 4,4′- Isopropylidenediphenol (commonly called bisphenol A), bis (4-hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane, and bis (4- Hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane, a mixture of three types (for example, bisphenol FD manufactured by Honshu Chemical Industry Co., Ltd.) Bisphenols, 1,2-benzenediol, 1,3-benzenedio Dihydroxybenzenes such as 1,4-benzenediol, trihydroxybenzenes such as 1,2,4-benzenetriol, various isomers of dihydroxynaphthalenes such as 1,6-dihydroxynaphthalene, 2,2′- Examples include compounds such as various isomers of biphenols such as biphenol and 4,4′-biphenol.

  Further, the content of the curing agent (particularly phenol-based curing agent) is not particularly limited, but is preferably 1 to 200 parts by mass, particularly 3 to 150 parts by mass with respect to 100 parts by mass of the thermoplastic resin. Is more preferable. If the content is less than the lower limit, the effect of improving the heat resistance of the adhesive layer 3 may be reduced, and if the content exceeds the upper limit, the storage stability of the adhesive layer 3 may be reduced.

  Further, when the thermosetting resin described above is an epoxy resin, it can be determined by calculating the equivalent ratio of the epoxy equivalent and the curing agent. The epoxy equivalent of the epoxy resin and the equivalent of the functional group of the curing agent (for example, phenol resin) If present, the ratio of hydroxyl equivalent) is preferably 0.5 to 1.5, particularly preferably 0.7 to 1.3. When the content is less than the lower limit value, the storage stability may be lowered, and when the content exceeds the upper limit value, the effect of improving the heat resistance may be lowered.

  The third resin composition is not particularly limited, but preferably further contains a curing catalyst (curing accelerator). Thereby, the sclerosis | hardenability of the contact bonding layer 3 can be improved.

  Examples of the curing catalyst include amine catalysts such as imidazoles and 1,8-diazabicyclo (5,4,0) undecene, phosphorus catalysts such as triphenylphosphine, and the like. Of these, imidazoles are preferred. Thereby, especially quick curability and preservability can be made compatible.

  Examples of imidazoles include 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 1-cyanoethyl-2- Phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1 ′)]-Ethyl-s-triazine, 2,4-diamino-6- [2′-ethyl-4′methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6 -[2'-Methylimidazolyl- (1 ')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole Null acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4-diamino-6-vinyl-s-triazine, 2,4-diamino -6-vinyl-s-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-s-triazine, 2,4-diamino-6-methacryloyloxyethyl-s-triazine isocyanuric acid adduct, etc. Can be mentioned. Among these, 2-phenyl-4,5-dihydroxymethylimidazole or 2-phenyl-4-methyl-5-hydroxymethylimidazole is preferable. Thereby, the storage stability can be particularly improved.

  Further, the content of the curing catalyst is not particularly limited, but is preferably about 0.01 to 30 parts by mass, particularly about 0.5 to 10 parts by mass with respect to 100 parts by mass of the thermoplastic resin. More preferred. If the content is less than the lower limit, the curability may be insufficient, and if the content exceeds the upper limit, the storage stability may decrease.

  The average particle diameter of the curing catalyst is not particularly limited, but is preferably 10 μm or less, and more preferably 1 to 5 μm. When the average particle size is within the above range, the reactivity of the curing catalyst is particularly excellent.

  The third resin composition is not particularly limited, but preferably further includes a coupling agent. Thereby, the adhesiveness of resin, a to-be-adhered body, and a resin interface can be improved more.

  Examples of the coupling agent include a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent. Of these, silane coupling agents are preferred. Thereby, heat resistance can be improved more.

  Among these, as the silane coupling agent, for example, vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane, N-β (aminoethyl) γ-aminopropylmethyl Dimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysila N-phenyl-γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, bis (3 -Triethoxysilylpropyl) tetrasulfane and the like.

  Although content of a coupling agent is not specifically limited, It is preferable that it is about 0.01-10 mass parts with respect to 100 mass parts of thermoplastic resins, and it is more about 0.5-10 mass parts especially. preferable. If the content is less than the lower limit, the effect of adhesion may be insufficient, and if it exceeds the upper limit, it may cause outgassing or voids.

  In forming the adhesive layer 3, such a third resin composition is dissolved in a solvent such as methyl ethyl ketone, acetone, toluene, dimethylformaldehyde and the like to form a varnish, followed by a comma coater, a die coater, The adhesive layer 3 can be obtained by coating on a carrier film using a gravure coater or the like and drying.

  The average thickness of the adhesive layer 3 is not particularly limited, but is preferably about 3 to 100 μm, and more preferably about 5 to 70 μm. When the thickness is within the above range, it is particularly easy to control the thickness accuracy.

  Moreover, the 3rd resin composition may contain the filler as needed. By including the filler, the mechanical properties and adhesive strength of the adhesive layer 3 can be improved.

  Examples of the filler include particles of silver, titanium oxide, silica, mica, and the like.

  Moreover, it is preferable that the average particle diameter of a filler is about 0.1-25 micrometers. If the average particle size is less than the lower limit, the effect of filler addition is reduced, and if it exceeds the upper limit, the adhesive strength as a film may be reduced.

  Although content of a filler is not specifically limited, It is preferable that it is about 0.1-100 mass part with respect to 100 mass parts of thermoplastic resins, and it is more preferable that it is especially about 5-90 mass parts. Thereby, the adhesive force can be further increased while enhancing the mechanical properties of the adhesive layer 3.

  In particular, the adhesive layer 3 has a shape such that the outer peripheral edge 32 is positioned outside the outer peripheral edge 3021 of the work table 302 used in a dicing process described later in plan view. That is, the diameter of the adhesive layer 3 is larger than the diameter of the work table 302.

(Support film)
The support film 4 is a support that supports the first adhesive layer 1, the second adhesive layer 2, and the adhesive layer 3 as described above.

  Examples of the constituent material of the support film 4 include polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, and ethylene vinyl acetate copolymer. , Ionomer, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, vinyl polyisoprene, polycarbonate, etc., and one or a mixture of two or more of these Is mentioned.

  The average thickness of the support film 4 is not particularly limited, but is preferably about 5 to 200 μm, and more preferably about 30 to 150 μm. Thereby, since the support film 4 has moderate rigidity, the first adhesive layer 1, the second adhesive layer 2, and the adhesive layer 3 are reliably supported to facilitate the handling of the semiconductor film 10. At the same time, when the semiconductor film 10 is appropriately curved, adhesion to the semiconductor wafer 7 can be enhanced.

  Further, the support film 4 has a shape in which the outer peripheral edge 42 is positioned outside the outer peripheral edge of the adhesive layer 3 and the outer peripheral edge of the first adhesive layer 1 described above. That is, the diameter of the support film 4 is larger than the diameter of the adhesive layer 3 and the diameter of the first adhesive layer 1.

(Characteristics of semiconductor film)
Although the 1st adhesion layer 1, the 2nd adhesion layer 2, and the contact bonding layer 3 have mutually different adhesive force (adhesion force), it is preferable that they have the following characteristics.

  First, the adhesive force of the first adhesive layer 1 to the adhesive layer 3 is preferably smaller than the adhesive force of the second adhesive layer 2 to the wafer ring 9. Thereby, in the 3rd process mentioned later, when picking up the piece 83, between the adhesion layer 3 and the 1st adhesion layer 1 without peeling between the 2nd adhesion layer 2 and the wafer ring 9, Peels selectively. When dicing, the laminated body 8 can be reliably supported by the wafer ring 9.

  That is, in this embodiment, since the two adhesive layers of the 1st adhesion layer 1 and the 2nd adhesion layer 2 are used, it is laminated as mentioned above by making each adhesion power (adhesion power) different. It is possible to achieve both the secure fixing of the body 8 and the easy pick-up of the piece 83. In other words, both dicing properties and pickup properties can be achieved.

  The adhesion force of the first adhesive layer 1 to the adhesive layer 3 and the adhesion force of the second adhesive layer 2 to the wafer ring 9 are the kind (composition) of the acrylic resin, the kind of monomer, and the content, respectively. It can be adjusted by changing the hardness or the like.

  Further, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 before dicing is not particularly limited, but it is preferably about 5 to 80 cN / 25 mm on the average of the adhesion interface, and particularly about 10 to 60 cN / 25 mm. Is more preferable. When the adhesive force is within the above range, problems such as the semiconductor element 71 falling off the first adhesive layer 1 when the laminated body 8 is expanded (expanded) as described later or the laminated body 8 is diced are prevented. In addition, excellent pick-up properties are ensured.

  Note that “cN / 25 mm”, which is a unit of the above-mentioned adhesion strength, is a 25 mm wide strip-shaped sample in which the adhesive layer 3 is pasted on the surface of the first adhesive layer 1, and thereafter at 23 ° C. (room temperature). This represents the load (unit cN) when the adhesive layer portion is peeled off at a peeling angle of 180 ° and a pulling speed of 1000 mm / min in the laminated film. That is, here, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 will be described as 180 ° peel strength.

  As a composition of the 1st adhesion layer 1 which has the above characteristics, 1-50 mass parts of acrylate monomers and 0.1-10 mass parts of isocyanate compounds are mix | blended with respect to 100 mass parts of acrylic resins, for example. The thing which was done is mentioned.

  On the other hand, the adhesion force of the second adhesive layer 2 to the wafer ring 9 is not particularly limited, but is preferably about 100 to 2,000 cN / 25 mm on the average of the adhesion interface, particularly about 400 to 1,200 cN / 25 mm. More preferably. When the adhesion is within the above range, when the laminate 8 is expanded (expanded) as described later, or when the laminate 8 is diced, the interface between the first adhesive layer 1 and the second adhesive layer 2 is peeled off. As a result, the semiconductor element 71 is reliably prevented from falling off. Further, the laminated body 8 can be reliably supported by the wafer ring 9.

  In addition, “cN / 25 mm” which is a unit of the above-mentioned adhesion strength is a support film 4 in which a strip-shaped second adhesive layer 2 having a width of 25 mm is laminated so that the second adhesive layer 2 is in contact with the upper surface of the wafer ring 9. At 23 ° C. (room temperature), the support film 4 on which the second adhesive layer 2 was laminated was peeled off from the wafer ring 9 at a peeling angle of 180 ° and a pulling speed of 1000 mm / min. Represents the load (unit cN). That is, here, the adhesion force of the second adhesive layer 2 to the wafer ring 9 will be described as 180 ° peel strength.

  As a composition of the 2nd adhesion layer 2 which has the above characteristics, 1-50 mass parts of urethane acrylate and 0.5-10 mass parts of isocyanate compounds are blended with respect to 100 mass parts of acrylic resin, for example. The thing which was done is mentioned.

  Moreover, the adhesive force of the first adhesive layer 1 to the adhesive layer 3 is smaller than the adhesive force of the first adhesive layer 1 to the second adhesive layer 2. Thereby, when the piece 83 is picked up, it can prevent that the interface of the 1st adhesion layer 1 and the 2nd adhesion layer 2 peels unintentionally. That is, peeling can be selectively caused at the interface between the first adhesive layer 1 and the adhesive layer 3.

In particular, the adhesion to the first adhesive layer 3 of the adhesive layer 1 and A _1, when the adhesion to the first adhesive layer 1 of the second adhesive layer 2 and the A _2, A 2 _/ A ₁ is not particularly limited However, it is preferable that it is about 5-200, and it is more preferable that it is about 10-50. Thereby, the 1st adhesion layer 1, the 2nd adhesion layer 2, and the contact bonding layer 3 become the thing especially excellent in dicing property and pick-up property.

  Further, the adhesion force of the first adhesive layer 1 to the second adhesive layer 2 is not particularly limited, but is preferably about 100 to 1,000 cN / 25 mm, more preferably about 300 to 600 cN / 25 mm. . When the adhesion is within the above range, the dicing property and the pickup property are particularly excellent.

  In addition, “cN / 25 mm”, which is a unit of the above-mentioned adhesion (adhesive strength), is a 25 mm width sample obtained by laminating the second adhesive layer 2 on the surface of the first adhesive layer 1 on the support film 4. This represents a load (unit cN) when the portion of the first adhesive layer 1 is peeled off at a peeling angle of 180 ° and a pulling speed of 1000 mm / min at 23 ° C. (room temperature). Is. That is, here, the adhesion force of the first adhesive layer 1 to the second adhesive layer 2 will be described as 180 ° peel strength.

  Further, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 is preferably smaller than the adhesion force of the adhesive layer 3 to the semiconductor wafer 7. Thereby, when the piece 83 is picked up, it is possible to prevent the interface between the semiconductor wafer 7 and the adhesive layer 3 from being unintentionally peeled off. That is, peeling can be selectively caused at the interface between the first adhesive layer 1 and the adhesive layer 3.

  Further, the adhesion force of the adhesive layer 3 to the semiconductor wafer 7 is not particularly limited, but is preferably about 50 to 500 cN / 25 mm, and more preferably about 80 to 250 cN / 25 mm. When the adhesion force is within the above range, it is possible to sufficiently prevent the occurrence of so-called “chip jump” in which the semiconductor element 71 flies off due to vibration or impact particularly during dicing.

  Note that “cN / 25 mm”, which is a unit of the above-mentioned adhesion (adhesive strength), is obtained by attaching a strip-like adhesive layer 3 having a width of 25 mm to the surface of the semiconductor wafer 7 and then bonding the adhesive at 23 ° C. (room temperature). The load (unit cN) when the layer 3 is peeled off at a peeling angle of 180 ° and a pulling speed of 1000 mm / min is shown. That is, here, the adhesion force of the adhesive layer 3 to the semiconductor wafer 7 will be described as 180 ° peel strength.

(Manufacturing method of semiconductor film)
The semiconductor film 10 as described above is manufactured, for example, by the following method.

  First, the base material 4a shown in FIG. 4A is prepared, and the first adhesive layer 1 is formed on one surface of the base material 4a. Thereby, the laminated body 61 of the base material 4a and the 1st adhesion layer 1 is obtained. The first adhesive layer 1 is formed by applying the above-described resin varnish containing the first resin composition by various application methods and then drying the applied film, or laminating a film made of the first resin composition. It can be performed by a method or the like. Further, the coating film may be cured by irradiating radiation such as ultraviolet rays.

  Examples of the coating method include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method.

  Further, similarly to the laminated body 61, as shown in FIG. 4A, the adhesive layer 3 is formed on one surface of the prepared base material 4b, whereby the base material 4b and the adhesive layer 3 are formed. The laminate 62 is obtained.

  Further, in the same manner as each of the laminates 61 and 62, as shown in FIG. 4A, the second adhesive layer 2 is formed on one surface of the prepared support film 4, and thereby the support film 4 And the second adhesive layer 2 are obtained.

  Next, as illustrated in FIG. 4B, the stacked body 61 and the stacked body 62 are stacked so that the first adhesive layer 1 and the adhesive layer 3 are in contact with each other to obtain a stacked body 64. This lamination can be performed by, for example, a roll lamination method.

  Next, as shown in FIG. 4C, the base material 4 a is peeled from the laminate 64. And as shown in FIG.4 (d), the outer side part of the effective area | region of the said adhesive layer 3 and the said 1st adhesion layer 1 leaves the base material 4b with respect to the laminated body 64 which peeled the said base material 4a. Is removed in a ring shape. Here, the effective area refers to an area whose outer periphery is larger than the outer diameter of the semiconductor wafer 7 and smaller than the inner diameter of the wafer ring 9.

  Next, as shown in FIG. 4 (e), a laminate in which the base 4 a is peeled off and the outer portion of the effective area is removed in a ring shape so that the second adhesive layer 2 is in contact with the exposed surface of the first adhesive layer 1. 64 and the laminated body 63 are laminated. Then, the film 10 for semiconductors shown in FIG.4 (f) is obtained by peeling the base material 4b.

[Method for Manufacturing Semiconductor Device]
Next, a method for manufacturing the semiconductor device 100 using the semiconductor film 10 as described above (first embodiment of the method for manufacturing a semiconductor device of the present invention) will be described.

  The semiconductor device manufacturing method shown in FIGS. 1 to 3 includes a first step of laminating a semiconductor wafer 7 and a semiconductor film 10 to obtain a laminated body 8, and an outer peripheral portion 21 of the semiconductor film 10 with a wafer ring 9. The semiconductor wafer 7 and the adhesive layer 3 are separated into individual pieces by providing a cut 81 in the laminated body 8 from the side of the semiconductor wafer 7 (dicing), and a plurality of semiconductor elements 71 and adhesive layers 31 are formed. A second step of obtaining the piece 83; a third step of picking up at least one of the pieces 83; and a fourth step of obtaining the semiconductor device 100 by placing the picked piece 83 on the insulating substrate 5. It has these processes. Hereinafter, each step will be described in detail.

[1]
[1-1] First, a semiconductor wafer 7 and a semiconductor film 10 are prepared.
The semiconductor wafer 7 has a plurality of circuits formed on its surface in advance. Examples of the semiconductor wafer 7 include a silicon semiconductor, a compound semiconductor wafer such as gallium arsenide and gallium nitride.

  The average thickness of the semiconductor wafer 7 is not particularly limited, and is preferably about 0.01 to 1 mm, more preferably about 0.03 to 0.5 mm. According to the method for manufacturing a semiconductor device of the present invention, the semiconductor wafer 7 having such a thickness can be cut into pieces easily and reliably without causing defects such as chipping and cracking. .

  [1-2] Next, as shown in FIG. 1A, the semiconductor film 10 and the semiconductor wafer 7 are bonded to each other while the adhesive layer 3 of the semiconductor film 10 and the semiconductor wafer 7 are brought into close contact with each other. Are stacked (first step). Note that in the semiconductor film 10 shown in FIG. 1, the size and shape of the adhesive layer 3 in plan view are set in advance to be larger than the outer diameter of the semiconductor wafer 7 and smaller than the inner diameter of the wafer ring 9. Has been. For this reason, the entire lower surface of the semiconductor wafer 7 is in close contact with the entire upper surface of the adhesive layer 3, whereby the semiconductor wafer 7 is supported by the semiconductor film 10.

  As a result of the above lamination, as shown in FIG. 1B, a laminated body 8 in which the semiconductor film 10 and the semiconductor wafer 7 are laminated is obtained.

[2] (Semiconductor wafer singulation method)
[2-1] Next, a wafer ring 9 is prepared. Subsequently, the stacked body 8 and the wafer ring 9 are stacked so that the upper surface of the outer peripheral portion 21 of the second adhesive layer 2 and the lower surface of the wafer ring 9 are in close contact with each other. Thereby, the outer peripheral part of the laminated body 8 is supported by the wafer ring 9.

Here, the outer peripheral edge of the adhesive layer 3 is located inside the inner peripheral edge of the wafer ring 9.
Since the wafer ring 9 is generally made of various metal materials such as stainless steel and aluminum, the wafer ring 9 has high rigidity and can surely prevent the laminate 8 from being deformed.

  By having two adhesive layers (first adhesive layer 1 and second adhesive layer 2) having different adhesiveness as described above, the semiconductor film 10 utilizes the difference in adhesiveness, Both dicing and pickup properties can be achieved.

  [2-2] Next, a work table (Dicer table) 302 is prepared, and the laminate 8 is placed on the work table 302 so that the work table 302 and the support film 4 are in contact with each other. At this time, the stacked body 8 is placed on the work table 302 so that the center of the adhesive layer 3 substantially coincides with the center of the work table 302 in plan view. As a result, the outer peripheral edge 32 of the adhesive layer 3 is positioned outside the outer peripheral edge 3021 of the work table 302.

  Subsequently, as shown in FIG. 1C, a plurality of cuts 81 are formed in the laminate 8 using a dicing blade 82 (dicing). The dicing blade 82 is composed of a disk-shaped diamond blade or the like, and a cut 81 is formed by pressing the dicing blade 82 against the surface of the laminated body 8 on the semiconductor wafer 7 side. Then, the semiconductor wafer 7 is separated into a plurality of semiconductor elements 71 by relatively moving the dicing blade 82 along the gap between the circuit patterns formed on the semiconductor wafer 7 (second step). ). Similarly, the adhesive layer 3 is divided into a plurality of adhesive layers 31. During such dicing, vibration and impact are applied to the semiconductor wafer 7, but the lower surface of the semiconductor wafer 7 is supported by the semiconductor film 10, so that the vibration and impact are alleviated. As a result, the occurrence of defects such as cracks and chippings in the semiconductor wafer 7 can be reliably prevented.

  At this time, since the outer peripheral edge 32 of the adhesive layer 3 is positioned outside the outer peripheral edge 3021 of the work table 302, even if cutting water is used in the dicing process, there is no problem at the interface between the adhesive layer 3 and the first adhesive layer. Intentional peeling (chip skipping) can be prevented. In addition, the effect | action of the film 10 for semiconductors in a dicing process is explained in full detail behind.

  The depth of the notch 81 is not particularly limited as long as it can penetrate the semiconductor wafer 7 and the adhesive layer 3. That is, the tip of the cut 81 only needs to reach any of the first adhesive layer 1, the second adhesive layer 2, and the support film 4. Thereby, the semiconductor wafer 7 and the adhesive layer 3 are surely separated into individual pieces, and the semiconductor element 71 and the adhesive layer 31 are formed, respectively.

  In this embodiment, as shown in FIG.1 (c), the front-end | tip of the notch 81 is fastened in the 1st adhesion layer 1, and this point is explained in full detail behind.

[3]
[3-1] Next, the laminate 8 in which the plurality of cuts 81 are formed is radially expanded (expanded) by an expanding device (not shown). Thereby, as shown in FIG.1 (d), the width | variety of the notch 81 formed in the laminated body 8 spreads, and the space | interval of the semiconductor elements 71 separated into pieces is also expanded in connection with it. As a result, there is no possibility that the semiconductor elements 71 interfere with each other, and the individual semiconductor elements 71 can be easily picked up. Note that the expanding device is configured to maintain such an expanded state even in a process described later.

  [3-2] Next, the die bonder 250 shown in FIG. 2 attracts and pulls up one of the separated semiconductor elements 71 upward. As a result, as shown in FIG. 2 (e), the interface between the adhesive layer 31 and the first adhesive layer 1 is selectively peeled off, and an individual piece 83 formed by laminating the semiconductor element 71 and the adhesive layer 31 is picked up. (Third step).

[4]
[4-1] Next, the insulating substrate 5 for mounting (mounting) the semiconductor element 71 (chip) is prepared.

  Examples of the insulating substrate 5 include an insulating substrate on which a semiconductor element 71 is mounted and wiring and terminals for electrically connecting the semiconductor element 71 and the outside are provided.

Specifically, flexible substrates such as polyester copper-clad film substrates, polyimide copper-clad film substrates, aramid copper-clad film substrates, glass-based copper-clad laminates such as glass cloth and epoxy copper-clad laminates, and glass nonwoven fabrics -Hard substrates such as heat-resistant and thermoplastic substrates such as composite copper-clad laminates such as epoxy copper-clad laminates, bismaleimide-triazine (BT) substrates, polyetherimide resin substrates, polyetherketone resin substrates, polysulfone resin substrates In addition, ceramic substrates such as an alumina substrate, an aluminum nitride substrate, and a silicon carbide substrate can be used.
Instead of the insulating substrate 5, a lead frame or the like may be used.

  Next, as shown in FIG. 2 (f), the picked-up pieces 83 are placed on the insulating substrate 5 by the die bonder 250.

Here, the die bonder 250 will be described.
The die bonder 250 shown in FIG. 2 picks up the piece 83 obtained through the dicing process and then transfers it onto the insulating substrate 5 described later.

  The die bonder 250 includes a collet (chip adsorbing portion) 260 that adsorbs the pieces 83, a heater 270 that heats the insulating substrate 5 from below, and an apparatus main body 280 that supports the collet 260. The collet 260 can move from the placement portion of the stacked body 8 to the placement portion of the insulating substrate 5 in a state where the individual pieces 83 are adsorbed.

  In this step, as shown in FIG. 2 (e), the piece 83 is picked up by the collet 260, and the piece 83 is placed on the insulating substrate 5. Then, the pieces 83 are bonded to the insulating substrate 5 by pressing the pieces 83 to the insulating substrate 5 while being heated by the heater 270 (see FIG. 2F).

  Note that the reason why the interface between the adhesive layer 31 and the first adhesive layer 1 is selectively peeled during such pickup is that the adhesiveness of the second adhesive layer 2 is the first adhesive layer 1 as described above. Therefore, the adhesive force at the interface between the support film 4 and the second adhesive layer 2 and the adhesive force at the interface between the second adhesive layer 2 and the first adhesive layer 1 are the same as those of the first adhesive layer 1. This is because the adhesive strength with the adhesive layer 3 is greater. That is, when the semiconductor element 71 is picked up, the interface between the first adhesive layer 1 and the adhesive layer 31 having the smallest adhesion among these three locations is selectively peeled off.

  Further, when picking up the individual piece 83, the individual piece 83 to be picked up may be selectively pushed up from below the semiconductor film 10. Thereby, since the piece 83 is pushed up from the laminated body 8, the pickup of the piece 83 mentioned above can be performed more easily. In order to push up the individual piece 83, a needle-like body (needle) (not shown) that pushes up the semiconductor film 10 from below is used. That is, the die bonder 250 may have this needle-like body.

  [4-2] Next, as shown in FIG. 3G, the pieces 83 placed on the insulating substrate 5 are heated and pressure-bonded. As a result, the semiconductor element 71 and the insulating substrate 5 are bonded (die bonding) via the adhesive layer 31 (fourth step).

  As conditions for heating and pressure bonding, for example, the heating temperature is preferably about 100 to 300 ° C, and more preferably about 100 to 200 ° C. Further, the pressure bonding time is preferably about 1 to 10 seconds, and more preferably about 1 to 5 seconds.

  Moreover, you may heat-process after that. The heating conditions in this case are such that the heating temperature is preferably about 100 to 300 ° C., more preferably about 120 to 250 ° C., and the heating time is preferably about 1 to 240 minutes, more preferably about 10 to 60 minutes. The

  Thereafter, a terminal (not shown) of the semiconductor element 71 and a terminal (not shown) on the insulating substrate 5 are electrically connected by a wire 84. For this connection, instead of the wire 84, a conductive paste, a conductive film, or the like may be used.

  Then, the individual pieces 83 and the wires 84 placed on the insulating substrate 5 are covered with a resin material to form a mold layer 85. Examples of the resin material constituting the mold layer 85 include various mold resins such as an epoxy resin.

  Further, a semiconductor device as shown in FIG. 3 (h) in which a semiconductor element 71 is accommodated in a package by bonding a ball-shaped electrode 86 to a terminal (not shown) provided on the lower surface of the insulating substrate 5. 100 is obtained.

  According to the method as described above, in the third step, the adhesive layer 31 is picked up in the state where the adhesive layer 31 is attached to the semiconductor element 71, that is, in the state of the piece 83. Can be used for bonding to the insulating substrate 5 as they are. For this reason, it is not necessary to separately prepare an adhesive or the like, and the manufacturing efficiency of the semiconductor device 100 can be further increased.

  In particular, in the dicing process, since the outer peripheral edge 32 of the adhesive layer 3 is positioned outside the outer peripheral edge 3021 of the work table 302, unintentional peeling at the interface between the adhesive layer 3 and the first adhesive layer is prevented. Can do.

(Operation of semiconductor film in dicing process)
Here, the operation of the semiconductor wafer 7 during the dicing process will be described in detail.

  In the dicing process, after the stacked body 8 is placed on the work table (dicer table) 302 as described above, a plurality of cuts 81 as shown in FIG. It is formed in order.

  More specifically, the formation of one of the plurality of cuts 81 will be described. First, the disc-shaped dicing blade 82 has one end of the work table 302 (in a direction parallel to the plate surface of the dicing blade 82). Above one end portion) of the laminated body 8 placed on the work table 302 and rotated about the axis.

  Thereafter, as shown in FIG. 5A, the dicing blade 82 is lowered to a position where a desired cutting amount is obtained while rotating, and the work table 302 is moved in a direction parallel to the plate surface of the dicing blade 82. As a result, as shown in FIG. 5B, the dicing blade 82 is pressed against the laminated body 8, and the dicing blade 82 moves relative to the laminated body 8 in a direction parallel to the plate surface. Is done. A cut 81 is formed along with the relative movement.

  At that time, in the vicinity of the contact portion of the dicing blade 82 with the laminate 8, pure water or cutting water J to which an additive is added is added for the purpose of cooling the dicing blade 82 and the semiconductor wafer 7, removing cutting waste, and the like. Be injected. This cutting water J is sprayed from a nozzle 301 provided around the dicing blade 82.

  The nozzle 301 is disposed on the front side (downstream side in the moving direction of the work table 302) with respect to the dicing blade 82 and jets cutting water J toward the dicing blade 82.

  The cutting water J sprayed from the nozzle 301 is applied to the dicing blade 82 while spreading around the center line L. The center line L coincides with the axis of the nozzle 301, and the pressure (injection pressure) of the cutting water J is the highest in the vicinity of the center line L.

  Then, as shown in FIG. 6, when the disc-shaped dicing blade 82 reaches the outer peripheral edge portion (the other end portion in the direction parallel to the plate surface of the dicing blade 82) of the work table 302, it rises and is stacked. Separated from the body 8.

  As described above, one notch 81 is formed. Thereafter, the dicing blade 82 or the work table 302 is moved by a predetermined amount in the thickness direction of the dicing blade 82, and the dicing blade 82 is returned to the upper side of the one end of the work table 302. A notch 81 is formed.

  In such a dicing process, a point P where the center line L of the cutting water J intersects with the upper surface of the laminate 8 is located inside the outer peripheral edge of the adhesive layer 3 as shown in FIG. Therefore, the center line L of the cutting water J does not pass through the outer peripheral edge (end surface) of the adhesive layer 3. Thereby, it is possible to prevent the outer peripheral edge of the adhesive layer 3 from being lifted by the pressure of the cutting water J. Therefore, unintentional peeling at the interface between the adhesive layer 3 and the first adhesive layer can be prevented in the dicing process. As a result, so-called chip jumping can be prevented and dicing performance can be improved. Moreover, since the adhesive force between the adhesive layer 3 and the first adhesive layer during the dicing step can be suppressed, the adhesive force between the adhesive layer 3 and the first adhesive layer can also be suppressed during the pickup. Therefore, when picking up the semiconductor element 71 in the pick-up process, it is possible to prevent the semiconductor wafer 7 (ie, the semiconductor element 71) that has been separated into pieces from being cracked or chipped, and to improve pick-up performance.

  On the other hand, if the outer peripheral edge of the adhesive layer 3 coincides with or is located on the inner side of the outer peripheral edge of the work table 302, the adhesive layer of the laminate 8 in which the center line L of the cutting water J is formed with the notches 81 is provided. 3 will pass through the outer periphery. Therefore, unintentional peeling may occur at the interface between the adhesive layer 3 and the first adhesive layer 1 due to the pressure of the cutting water J.

  In particular, if the outer peripheral edge of the adhesive layer 3 coincides with the outer peripheral edge of the work table 302, such unintended peeling tends to occur. In general, an inclined surface (taper) is formed on the installation surface (upper surface) so that the thickness decreases from the inner side toward the outer side on the outer peripheral portion of the work table. This is considered to be because the force that causes the outer peripheral portion of the semiconductor film to hang down acts to cause peeling at the interface between the adhesive layer 3 and the first adhesive layer 1.

  From this point of view, the distance between the outer peripheral edge of the adhesive layer 3 and the outer peripheral edge of the work table 302 when viewed in plan in the dicing process is the effect of the pressure of the cutting water J on the outer peripheral edge of the adhesive layer 3. For example, it is preferably 1 to 20 mm, and more preferably 5 to 15 mm. Thereby, it can prevent that the outer peripheral part of the contact bonding layer 3 peels off with the pressure of the cutting water J at the time of dicing.

  On the other hand, when the distance is less than the lower limit, the pressure of the cutting water J, the positioning accuracy of the laminate 8 with respect to the work table 302, the adhesive strength of the first adhesive layer 1, and the rigidity of the semiconductor film 10 Depending on the form of the edge of the work table, the outer periphery of the adhesive layer 3 may be peeled off by the pressure of the cutting water J. On the other hand, when the distance exceeds the upper limit, no further effect can be expected, or the outer peripheral portion of the semiconductor film 10 that protrudes outside the outer peripheral edge of the work table 302 is the installation surface of the work table 302. When it bends further downward, the stiffness of the adhesive layer 3 wins against the bending and the adhesive layer 3 may be lifted.

  The distance between the outer peripheral edge of the support film 4 and the outer peripheral edge of the adhesive layer 3 in plan view is such that the support film 4 can support the adhesive layer 3 and the work table 302 of the semiconductor film 10. When the outer peripheral portion that protrudes outward from the outer peripheral edge is bent downward from the installation surface of the work table 302, the adhesive layer 3 is set to such an extent that it can follow the bending. It is preferable that it is 10 to 21 mm.

  More specifically, for example, in a dicing saw corresponding to dicing of an 8-inch wafer, the work table has a diameter of about 220 mm, and the work table mounting surface has a diameter of about 203 mm. In such a dicing saw, the dicing blade moves with a stroke of about 210 mm to perform dicing.

  Therefore, in order to make the semiconductor film 10 suitable for such a dicing saw, the diameters of the adhesive layer 3 and the first adhesive layer 1 are about 222 to 260 mm, respectively, and the support film 4 and the second adhesive layer Each of the diameters 2 is about 252 to 280 mm.

  Further, the amount of the outer peripheral portion of the semiconductor film 10 that protrudes outside the outer peripheral edge of the work table 302 to be bent downward from the installation surface of the work table 302 is considered to be mainly due to the rigidity of the support film 4. Therefore, the Young's modulus of the support film 4 is preferably 10 to 1000 MPa, and more preferably 50 to 400 MPa. Thereby, while suppressing the amount of bending, the handleability of the semiconductor film 10 can be improved.

  In the dicing process of the present embodiment, the cutting depth is set so that the tip of the dicing blade 82 stays in the adhesive layer. In other words, the dicing is performed so that the tip of the cut 81 does not reach the support film 4 and remains in the first adhesive layer 1. If it does in this way, since the shavings of the support film 4 cannot generate | occur | produce, the problem accompanying shavings will be eliminated reliably. That is, when the semiconductor element 71 is picked up, the occurrence of catching or the like is prevented, and when the picked-up semiconductor element 71 is mounted on the insulating substrate 5, the entry of foreign matters and the occurrence of defective wire bonding are prevented. As a result, the manufacturing yield of the semiconductor device 100 can be improved, and the highly reliable semiconductor device 100 can be obtained.

  In particular, by performing dicing so that the front end of the notch 81 is positioned in the first adhesive layer 1, the components of the second adhesive layer 2 can pass through the notch 81 and the periphery of the adhesive layer 3 or the semiconductor wafer 7. It is prevented from oozing out to the periphery. As a result, it is possible to prevent the exuded substance from unintentionally increasing the adhesion between the adhesive layer 3 and the first adhesive layer 1 and to prevent a problem that hinders the pickup of the piece 83. Can do. Furthermore, it is possible to prevent the exuded substance from causing deterioration or deterioration of the semiconductor element 71.

  Such exudation of the component inevitably causes the second adhesive layer 2 to be more flexible than the first adhesive layer 1 because the adhesiveness of the second adhesive layer 2 is stronger than the adhesiveness of the first adhesive layer 1. Therefore, the substance contained in the second adhesive layer 2 is considered to be a phenomenon caused by the fact that the fluidity and the outflow property are higher than those of the first adhesive layer 1. That is, as in this embodiment, the adhesive layer is composed of a plurality of layers, and the adhesive layer on the support film 4 side (in FIG. 1, the first adhesive layer 1 in FIG. 1) (the adhesive layer 3 side in FIG. 1). When the adhesiveness of the second adhesive layer 2) is strong, as shown in FIG. 1C, it is particularly effective to prevent the above-mentioned problems to keep the tip of the notch 81 in the first adhesive layer 1. .

  From the above viewpoint, the hardness of the second adhesive layer 2 is preferably smaller than the hardness of the first adhesive layer 1. Thereby, the second adhesive layer 2 is surely higher in adhesiveness than the first adhesive layer 1, while the first adhesive layer 1 is excellent in pick-up property.

  Moreover, it is preferable that the Shore D hardness of the 1st adhesion layer 1 is about 20-60, and it is more preferable that it is about 30-50. The first pressure-sensitive adhesive layer 1 having such hardness is moderately suppressed in adhesiveness, but relatively low in fluidity and flowability of components, so that the notch 81 is formed in the first pressure-sensitive adhesive layer 1. In addition, it is possible to achieve both improvement in pick-up property and prevention of troubles due to leaching of the substance from the first adhesive layer 1.

  Moreover, it is preferable that the Shore A hardness of the 2nd adhesion layer 2 is about 5-90, and it is more preferable that it is about 10-80. Since the second adhesive layer 2 having such hardness has sufficient adhesiveness, the fluidity and flowability of the components can be relatively suppressed, so that the dicing property (fixing of the laminate 8 and the wafer ring 9 in dicing) Property) and prevention of defects due to the exudation of substances.

From the above viewpoint, the cross-sectional area of the portion of the notch 81 on the tip side from the interface between the adhesive layer 3 and the first adhesive layer 1 is the thickness of the dicing blade 82, the adhesive layers 1, Although it differs depending on the thickness of 2, it is preferably about ^{5 to} 300 (× 10 ⁻⁵ mm ² ), more preferably about 10 to 200 (× 10 ⁻⁵ mm ² ). Of the cuts 81, by setting the cross-sectional area of the portion on the tip side from the interface between the adhesive layer 3 and the first adhesive layer 1 within the above range, the adhesive layer 3 is surely separated into pieces and the first adhesive The cross-sectional area of the cut portion with respect to the layer 1 can be minimized. As a result, it is possible to achieve both a reliable pickup of the individual pieces 83 and a suppression of the exudation of components from the first adhesive layer 1 at a high level.

  Moreover, when the film thickness of the 1st adhesion layer 1 is set to t, it is preferable that the depth of the part located in the 1st adhesion layer 1 among the notches 81 is 0.2t-0.8t, 0 More preferably, it is 3 to 0.7 t. Thereby, reliable pick-up of the piece 83 and suppression of the exudation of the component from the 1st adhesion layer 1 can be made to make compatible both more highly.

  As described above, the front end of the notch 81 is retained in the first adhesive layer 1, or even if not, the cross-sectional area of the front end side portion of the notch 81 from the interface between the adhesive layer 3 and the first adhesive layer 1 In the above range, the exudation of the component from the first adhesive layer 1 and the second adhesive layer 2 can be minimized, so that the exudation of this component adheres to the first adhesive layer 1. The influence on the adhesion with the layer 3 is also minimized. As a result, it is possible to prevent the close contact force from increasing unintentionally and hindering the pick-up property of the piece 83.

  Specifically, by controlling the depth, cross-sectional area, and the like of the notch 81, the adhesion between the first adhesive layer 1 and the adhesive layer 3 is reliably within the numerical range described above. As a result, the pick-up property of the individual piece 83 is particularly improved, and it is possible to prevent the semiconductor element 71 from suffering defects such as cracks, chips and burrs during pick-up. As a result, the highly reliable semiconductor device 100 can be finally manufactured with a high yield.

  In particular, when the thickness of the semiconductor wafer 7 is thin (for example, 200 μm or less), the adhesive force between the first adhesive layer 1 and the adhesive layer 3 is within the above range, so that the semiconductor element 71 has the above-described state. The effect of preventing various problems becomes remarkable.

  In addition, the adhesion between the first adhesive layer 1 and the adhesive layer 3 is often different between the central portion and the edge portion (edge portion) of each individual piece 83. This is due to the fact that, at the edge, the component in the first adhesive layer 1 crawls up on the end face of the piece 83 and the adhesive force tends to increase compared to the central portion. For this reason, when picking up the individual piece 83, the adhesive force is greatly different between the center portion and the edge portion, which may cause cracking or chipping of the semiconductor element 71.

  On the other hand, by controlling the dicing depth so that the tip of the notch 81 stays in the first adhesive layer 1, it is possible to reduce the range of the adhesion force variation in the individual piece 83. For this reason, when picking up the individual piece 83, it is possible to prevent the semiconductor element 71 from being cracked or chipped.

  Here, when the piece 83 is peeled off, the load applied to the edge of the piece 83 (edge contact force) is defined as a, and the load applied to the center of the piece 83 (center contact force) is defined as b. The a / b is preferably 1 or more and 4 or less, more preferably 1 or more and 3 or less, and further preferably 1 or more and 2 or less. As a result, the variation in the load of each part of the semiconductor element 71 is suppressed to a relatively narrow range, so that the occurrence of defects such as cracking and chipping of the semiconductor element 71 during pickup is surely suppressed. be able to. By using the semiconductor film 10 as described above, the manufacturing yield of the semiconductor device 100 can be improved, and the highly reliable semiconductor device 100 can be finally obtained.

The adhesion force a and the adhesion force b are measured in detail as follows.
First, after laminating the semiconductor film 10 and the semiconductor wafer 7 to obtain the laminated body 8, the lamination before performing the third step in a state after the semiconductor wafer 7 is separated into 10 mm × 10 mm squares. A strip-shaped adhesive film having a width of 1 cm is attached to the upper surface of the body 8 at 23 ° C. (room temperature).

  Next, at 23 ° C. (room temperature), the first adhesive layer 1, the second adhesive layer 2 and the support film 4 are peeled from the laminate 8 at a peeling angle of 90 ° and a pulling speed of 50 mm / min. At this time, the tensile load (unit N) applied to the first adhesive layer 1, the second adhesive layer 2 and the support film 4 is determined while peeling off the first adhesive layer 1, the second adhesive layer 2 and the support film 4. taking measurement. And the average value of the tensile load applied to the first adhesive layer 1, the second adhesive layer 2 and the support film 4 when the edge of the piece 83 separates from the first adhesive layer 1 corresponds to "adhesion force a" The average value of the tensile load applied to the first adhesive layer 1, the second adhesive layer 2, and the support film 4 when the central portion (portion other than the edge portion) of the piece 83 is separated from the first adhesive layer 1 is “adhesion force b”. Is equivalent to.

  That is, according to the semiconductor film 10, when the edge of the piece 83 is about to be separated from the first adhesive layer 1, and when the center portion of the piece 83 is about to be separated from the first adhesive layer 1, Since the difference in the magnitude of the tensile load applied to the first adhesive layer 1, the second adhesive layer 2, and the support film 4 can be suppressed to be relatively small, even if the semiconductor element 71 is warped during pick-up, the warp Will be minimized. As a result, problems such as cracks and chipping of the semiconductor element 71 can be minimized.

  Moreover, it is preferable that the adhesive force b of the center part (parts other than an edge part) of the piece 83 exists in the range of the adhesive force of the 1st adhesion layer 1 and the contact bonding layer 3 mentioned above, However, 0 It is preferably about 0.05 to 0.3 N / 10 mm, and more preferably about 0.10 to 0.25 N / 10 mm. When the adhesion force b is within the above range, the pick-up property of the individual piece 83 is particularly improved, and it is possible to prevent the semiconductor element 71 from being broken, chipped, or burred during pick-up. As a result, the highly reliable semiconductor device 100 can be finally manufactured with a high yield.

  In particular, when the thickness of the semiconductor wafer 7 is thin (for example, 200 μm or less), the effect of preventing the above-described problems occurring in the semiconductor element 71 becomes remarkable by setting the adhesion force b within the above range.

  The edge of the piece 83 refers to a region that is 10% or less of the width of the semiconductor element 71 from the outer edge of the semiconductor element 71. On the other hand, the central portion of the piece 83 refers to a region other than the edge portion. That is, when the shape of the semiconductor element 71 is, for example, a 10 mm square in a plan view, a region 1 mm wide from the outer edge is an edge, and the remaining region is a center.

  Further, in the present embodiment, the semiconductor wafer 7 and the adhesive layer 3 are surely separated into pieces by retaining the tip of the cut 81 in the first adhesive layer 1, while the first adhesive layer 1 and the second adhesive layer 2 is not singulated. Therefore, when picking up the piece 83 in the third step, the first adhesive layer 1 and the second adhesive layer 2 should be left on the support film 4 side, but unintentionally stuck to the piece 83 side. Picking up in a state can be prevented. This is because, since the first adhesive layer 1 and the second adhesive layer 2 are not separated into individual pieces, the connection in the surface direction is maintained, so that the adhesion between the first adhesive layer 1 and the second adhesive layer 2 is maintained. This is because a decrease in the adhesion between the second adhesive layer 2 and the support film 4 is prevented. That is, the adhesive force between the first adhesive layer 1 and the second adhesive layer 2 and the adhesive force between the second adhesive layer 2 and the support film 4 have sufficient resistance against the upward pulling force in the pickup. Because.

  Moreover, as above-mentioned, since the fall of the adhesive force of the 1st adhesion layer 1 and the 2nd adhesion layer 2 and the adhesion force of the 2nd adhesion layer 2 and the support film 4 is prevented, it is the 1st adhesion. Even if the adhesion force between the layer 1 and the adhesive layer 3 is increased, the deterioration of the pickup property is suppressed. That is, in the adhesive force between the first adhesive layer 1 and the adhesive layer 3, the allowable range that enables good pickup can be further expanded, and thus the ease of manufacturing the semiconductor film 10 and the semiconductor element 71 after mounting. There is also an advantage that adhesion between the insulating substrate 5 and the insulating substrate 5 is improved.

Second Embodiment
Next, a second embodiment of the semiconductor film of the present invention and the semiconductor device manufacturing method of the present invention will be described.

  FIG. 8 is a view (longitudinal sectional view) for explaining a second embodiment of the semiconductor film of the present invention and the method of manufacturing a semiconductor device of the present invention. In the following description, the upper side in FIG. 8 is referred to as “upper” and the lower side is referred to as “lower”.

  Hereinafter, although the second embodiment will be described, the description will focus on the differences from the first embodiment, and the description of the same matters will be omitted. In FIG. 8, the same components as those in the first embodiment are denoted by the same reference numerals as those in FIG.

  The semiconductor film 10 ′ according to this embodiment is the same as that of the first embodiment except that the layer configuration of the adhesive layer is different.

  That is, in the semiconductor film 10 ′ shown in FIG. 8, the first adhesive layer 1 is omitted and only one layer of the second adhesive layer 2 is provided.

  In manufacturing such a semiconductor film 10 ′, ultraviolet rays are irradiated in advance on a region of the upper surface of the second adhesive layer 2 that is in contact with the adhesive layer 3 (region where the semiconductor wafer 7 is laminated). Thereby, the adhesiveness of this area | region is deactivated, As a result, the adhesive force of the 2nd adhesion layer 2 and the contact bonding layer 3 falls. As a result, when picking up the individual piece 83 in the third step, the individual piece 83 can be picked up without applying a large load, so that the pickup performance can be improved.

  On the other hand, in the upper surface of the second pressure-sensitive adhesive layer 2, the region not in contact with the adhesive layer 3 is not irradiated with ultraviolet rays, so that the original pressure-sensitive adhesive force of the second pressure-sensitive adhesive layer 2 is maintained in this region. For this reason, the adhesive force between the second adhesive layer 2 and the wafer ring 9 is also maintained, and the dicing performance is prevented from being lowered.

  In other words, in the first embodiment, by using two adhesive layers having different adhesive properties, both dicing properties and pickup properties are achieved, but in the present embodiment, one of the second adhesive layers 2 is provided. By reducing the adhesiveness only in the partial region, both the dicing property and the pickup property are compatible even with a single adhesive layer.

  Such a semiconductor film 10 ′ is laminated with a semiconductor wafer 7 as shown in FIG. 8A to obtain a laminated body 8 ′.

Next, as shown in FIG. 8B, a plurality of cuts 81 are formed in the laminate 8 ′ using a dicing blade 82 (dicing). At this time, as shown in FIG. 8B, since the outer peripheral edge of the adhesive layer 3 is located outside the outer peripheral edge 3021 of the work table 302, the adhesive layer 3 is lifted as in the first embodiment. Chip skipping can be prevented. Further, by performing dicing so that the tip of the notch 81 stays in the second adhesive layer 2, shavings of the support film 4 cannot be generated, and thus the same operations and effects as in the first embodiment are obtained. It is done.
Then, a semiconductor device is obtained by performing a 3rd process and a 4th process.

  In addition, as an ultraviolet-ray irradiated to the 2nd adhesion layer 2, Preferably a thing with a wavelength of about 100-400 nm is used, More preferably, a thing with a wavelength of about 200-380 nm is used. Further, the irradiation time of ultraviolet rays is preferably about 10 seconds to 1 hour, more preferably about 30 seconds to 30 minutes, although it depends on the wavelength and power. According to such ultraviolet rays, the chemical structure in the second adhesive layer 2 is changed, the adhesiveness is efficiently deactivated, and the adhesiveness of the second adhesive layer 2 is prevented from being lowered more than necessary. can do.

  Moreover, what irradiates the 2nd adhesion layer 2 is not restricted to an ultraviolet-ray, Various radiations, such as an electron beam and an X-ray, may be sufficient.

  In addition, irradiation of an ultraviolet-ray is not restricted to the case where it irradiates with respect to the area | region which contact | connects the contact bonding layer 3 among the upper surfaces of the 2nd adhesion layer 2 like this embodiment. For example, when the constituent material of the second adhesive layer 2 is a material that cures in response to ultraviolet rays, the second adhesive layer 2 and the adhesive layer are laminated after the second adhesive layer 2 and the adhesive layer 3 are laminated. 3 and the semiconductor wafer 7 are laminated, or the second adhesive layer 2, the adhesive layer 3 and the semiconductor wafer 7 are laminated and the semiconductor wafer 7 is diced. Good. In such a case, since the 2nd adhesion layer 2 hardens | cures with irradiation of an ultraviolet-ray, the adhesive force of the 2nd adhesion layer 2 located in an irradiation area | region falls. As a result, even in such a case, the pickup performance of the individual piece 83 can be improved.

  As mentioned above, although the film for semiconductors of this invention and the manufacturing method of a semiconductor device were demonstrated based on embodiment of illustration, this invention is not limited to these.

  For example, the package form is a CSP (Chip Size Package) such as BGA (Ball Grid Array) or LGA (Land Grid Array), a surface mount type package such as TCP (Tape Carrier Package), or DIP (Dual Inline Package). Further, it may be an insertion type package such as PGA (Pin Grid Array), and is not particularly limited.

  In each of the above embodiments, the case where the piece 83 is mounted on the insulating substrate 5 has been described. However, the piece 83 may be mounted on another semiconductor element. That is, the method for manufacturing a semiconductor device of the present invention can also be applied to manufacturing a chip stack type semiconductor device in which a plurality of semiconductor elements are stacked. Thereby, there is no possibility of pick-up failure or the possibility of chips entering between the semiconductor elements, and a highly reliable chip stack type semiconductor device can be manufactured with a high manufacturing yield.

  Further, in the first embodiment described above, the case where the outer peripheral edge of the first adhesive layer 1 coincides with the outer peripheral edge of the adhesive layer 3 is described. However, the outer peripheral edge of the first adhesive layer 1 is the outer periphery of the adhesive layer 3. You may be located inside the periphery. In this case, the portion near the outer peripheral edge of the adhesive layer 3 can be brought into close contact with the second adhesive layer 2 without the first adhesive layer 1 being interposed. Further, in this case, from the viewpoint of improving the adhesion to the second adhesive layer 2 in the vicinity of the outer peripheral edge of the adhesive layer 3, the first adhesive layer 1 has its outer peripheral edge located outside the outer peripheral edge of the semiconductor wafer 7. It is preferable to have such a shape.

  Moreover, although the said 1st Embodiment demonstrated the case where the notch 81 was formed so that a front-end | tip stays in the 1st adhesion layer 1, the notch 81 was formed so that a front-end | tip remains in the 2nd adhesion layer 2. Even in this case, although the effect of suppressing the exudation of the substance is slightly diminished, the same actions and effects as those of the second embodiment can be obtained.

  Moreover, in the method for manufacturing a semiconductor device of the present invention, an optional step can be added as necessary.

Hereinafter, specific examples of the present invention will be described.
1. Manufacturing of a semiconductor device (Example 1)
<1> Formation of First Adhesive Layer 100 parts by mass of a copolymer having a weight average molecular weight of 300,000 obtained by copolymerizing 30% by mass of 2-ethylhexyl acrylate and 70% by mass of vinyl acetate, and a molecular weight of 700 Peeling treatment of 45 parts by mass of pentafunctional acrylate monomer, 5 parts by mass of 2,2-dimethoxy-2-phenylacetophenone, and 3 parts by mass of tolylene diisocyanate (Coronate T-100, manufactured by Nippon Polyurethane Industry Co., Ltd.) It apply | coated so that the thickness after drying might be set to 30 micrometers with respect to the polyethylene-terephthalate film of thickness 38 micrometers, and it dried at 80 degreeC after that for 5 minutes. And the ultraviolet-ray 500mJ / cm < ² > was irradiated with respect to the obtained coating film, and the 1st adhesion layer was formed into a film on the polyethylene terephthalate film.
In addition, the Shore D hardness of the obtained 1st adhesion layer was 40.

<2> Formation of Second Adhesive Layer 100 parts by mass of a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 70% by mass of butyl acrylate and 30% by mass of 2-ethylhexyl acrylate, and tolylene 3 parts by mass of isocyanate (Coronate T-100, manufactured by Nippon Polyurethane Industry Co., Ltd.) was applied to a polyethylene terephthalate film having a thickness of 38 μm which was subjected to a release treatment so that the thickness after drying was 10 μm. And dried at 80 ° C. for 5 minutes. And the 2nd adhesion layer was formed into a film on the polyethylene terephthalate film. Thereafter, a polyethylene sheet having a thickness of 100 μm was laminated as a support film.
In addition, the Shore A hardness of the obtained 2nd adhesion layer was 80.

<3> Formation of Adhesive Layer Acrylate ester copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl methacrylate copolymer methyl ethyl ketone (MEK) dissolved product, manufactured by Nagase ChemteX Corporation, SG-708 -6, Tg: 6 ° C., weight average molecular weight: 500,000) 100 parts by mass and phenoxy resin (JER1256, weight average molecular weight: 50,000, manufactured by Japan Epoxy Resins Co., Ltd.) 9.8 90.8 parts by mass of spherical silica (SC1050, average particle size: 0.3 μm, manufactured by Admatechs) added as a filler, and γ-glycidoxypropyltri added as a coupling agent 1.1 parts by mass of methoxysilane (KBM403E, manufactured by Shin-Etsu Chemical Co., Ltd.) Nord resin and (PR-53647, hydroxyl equivalent 104 g / OH group, Sumitomo Bakelite Co., Ltd.) 0.1 parts by weight, and dissolved in methyl ethyl ketone to obtain a resin solid content of 20% by weight of the resin varnish.

  Next, the obtained resin varnish was applied to a polyethylene terephthalate film (manufactured by Teijin DuPont Films Co., Ltd., product number Purex A43, thickness 38 μm) with a comma coater, and then dried at a temperature of 150 ° C. for 3 minutes. An adhesive layer having a thickness of 10 μm was formed on the terephthalate film.

<4> Manufacture of a film for semiconductor A film in which a first adhesive layer is formed and a film in which an adhesive layer is formed are laminated (laminated) so that the first adhesive layer and the adhesive layer are in contact with each other. The layer-side polyethylene terephthalate film was peeled off to obtain a laminate.

  Next, using a roll-shaped die, the first adhesive layer and the adhesive layer are punched out to be larger than the outer diameter of the semiconductor wafer and smaller than the inner diameter of the wafer ring, and then unnecessary portions are removed, and the second laminated body is removed. Got.

  At this time, the diameters of the first adhesive layer and the adhesive layer were 240 mm, respectively, so as to be suitable for an 8-inch semiconductor wafer. Moreover, the diameter of the support film and the 2nd adhesion layer was 270 mm, respectively.

  Further, the polyethylene terephthalate film on one surface side of the second adhesive layer is peeled off. And these were laminated | stacked so that the 1st adhesion layer and 2nd adhesion layer of a said 2nd laminated body might contact | connect. Thereby, the film for semiconductors obtained by laminating five layers of the polyethylene sheet (support film), the second adhesive layer, the first adhesive layer, the adhesive layer, and the polyethylene terephthalate film in this order was obtained.

  At this time, the polyethylene sheet (support film), the second pressure-sensitive adhesive layer, the first pressure-sensitive adhesive layer, the adhesive layer, and the polyethylene terephthalate film were laminated so that their centers coincided in plan view.

<5> Manufacture of Semiconductor Device Next, a silicon wafer having a thickness of 35 μm and 8 inches (203 mm) was prepared.

  And the polyethylene terephthalate film was peeled from the film for semiconductors, and the silicon wafer was laminated | stacked at 60 degreeC on the peeling surface. Thereby, the laminated body formed by laminating | stacking 5 layers of a polyethylene sheet (support film), a 2nd adhesion layer, a 1st adhesion layer, an adhesion layer, and a silicon wafer in this order was obtained.

  At this time, the polyethylene sheet (support film), the second pressure-sensitive adhesive layer, the first pressure-sensitive adhesive layer, the adhesive layer, and the semiconductor wafer were laminated so that their centers coincided in plan view.

  Next, the laminate was diced (cut) from the silicon wafer side using a dicing saw (DFD6360, manufactured by DISCO Corporation) under the following conditions. As a result, the silicon wafer was singulated, and a semiconductor element having the following dicing size was obtained.

<Dicing conditions>
・ Dicing size: 10 mm × 10 mm square ・ Dicing speed: 50 mm / sec
・ Spindle speed: 40,000 rpm
・ Z1 axis blade height: 0.165mm
・ Z2 axis blade height: 0.125mm
-Worktable diameter: 220mm
・ Cutting water: Pure water ・ Cutting water injection pressure: 0.3 Mpa
・ Cutting water flow rate: 12 L / min
・ Dicing saw stroke: 210mm

  The Z1 axis and the Z2 axis blade height are positions in the Z axis direction of the blade with the work table upper surface (= support film lower surface) as a reference point (zero point) when dicing in two stages. The blade height is the position in the Z-axis direction during the first cut, and the Z2-axis blade height is the position in the Z-axis direction during the second cut.

  In addition, when mounting a laminated body on a work table, it mounted so that the center of a work table and the center of a laminated body might correspond by planar view. In addition, the work table is configured by fitting a stainless steel ring having an outer diameter of 220 mm to the outer periphery of a ceramic porous body having a disk shape having a diameter of 203 mm, on the side on which the laminated body is placed. The surface was a flat surface within a diameter of 210 mm from the center, and the height of the outer peripheral edge was 2 mm below, and an inclined surface was formed between the flat surface and the outer peripheral edge.

  Further, the point where the center line of the cutting water intersects with the laminate was located on the inner side of the outer peripheral edge of the adhesive layer. Moreover, the notch formed by this dicing had the front-end | tip reached in the 1st adhesion layer.

  Next, one of the semiconductor elements was pushed up with a needle from the back surface of the semiconductor film, and the pushed up surface of the semiconductor element was pulled up while being adsorbed by a collet of a die bonder. As a result, individual pieces of the semiconductor element and the adhesive layer were picked up.

  Next, the picked-up piece is applied to a bismaleimide-triazine resin substrate (circuit level difference: 5 to 10 μm) coated with a solder resist (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: AUS308) at a temperature of 130 ° C. and a load of 5 N. For 1.0 second and die bonded.

Next, the semiconductor element and the resin substrate were electrically connected by wire bonding.
Then, the semiconductor element and the bonding wire on the resin substrate were sealed with a sealing resin EME-G760 (trade name, manufactured by Sumitomo Bakelite Co., Ltd.) and subjected to a heat treatment at a temperature of 175 ° C. for 2 hours. Thereby, the sealing resin was cured to obtain a semiconductor device. In this example, ten such semiconductor devices were manufactured.

(Example 2)
A semiconductor device was manufactured in the same manner as in Example 1 except that the diameters of the adhesive layer and the first adhesive layer were 225 mm.

Example 3
A semiconductor device was manufactured in the same manner as in Example 1 except that the diameter of the first adhesive layer was 225 mm.

Example 4
A semiconductor device was manufactured in the same manner as in Example 1 except that the diameters of the adhesive layer and the first adhesive layer were 225 mm, and the diameters of the support film and the second adhesive layer were 255 mm.

(Example 5)
A semiconductor device is manufactured in the same manner as in Example 1 except that the diameter of the adhesive layer and the first adhesive layer is 330 mm, the diameter of the support film and the second adhesive layer is 370 mm, and the diameter of the work table is 318 mm. did.

(Comparative Example 1)
A semiconductor device was manufactured in the same manner as in Example 1 except that the diameters of the adhesive layer and the first adhesive layer were 220 mm.

(Comparative Example 2)
A semiconductor device was manufactured in the same manner as in Example 1 except that the diameters of the adhesive layer and the first adhesive layer were 200 mm.

2. 2. Evaluation 2.1 Dicing property First, the dicing property in each example and each comparative example was evaluated. Specifically, in each example and each comparative example, a semiconductor wafer was singulated to produce 100 semiconductor elements, and when these were picked up, the presence or absence of defects in each semiconductor element was evaluated as follows. Evaluation was made according to criteria. In addition, as said malfunction, the chip | tip of a semiconductor element, a crack, peeling (chip jump), etc. are mentioned.

<Evaluation criteria for dicing properties>
◎: The number of semiconductor elements containing defects is less than 3 ○: The number of semiconductor elements containing defects is 3 or more and less than 6 △: The number of semiconductor elements containing defects is 6 or more and less than 10 ×: Includes defects 10 or more semiconductor elements

2.2 Pick-up property Next, in order to evaluate the pick-up property of the separated semiconductor elements, the 90 ° peel strength of the semiconductor elements in each Example and each Comparative Example was measured. The peel strength is obtained by sticking a 1 cm wide strip-shaped adhesive film to the upper surface of the semiconductor element at 23 ° C. (room temperature), and then pulling at a peel angle of 90 ° from the support film side at 23 ° C. (room temperature). The load at the end when the film was peeled off at a speed of 50 mm / min was used.

  Then, the measured load was evaluated according to the following evaluation criteria using a peel strength reference range of 0.1 to 0.4 N / 10 mm.

<Evaluation criteria for pickup properties>
◎: The number of semiconductor elements deviating from the reference range is less than 1 ○: The number of semiconductor elements deviating from the reference range is 1 or more and less than 5 △: The number of semiconductor elements deviating from the reference range is 5 or more and 10 Less than ×: The number of semiconductor elements deviating from the reference range is 10 or more. Table 1 shows the evaluation results.

  As a result of this measurement, in each Example, good results were obtained for both dicing properties and pickup properties.

  On the other hand, in each comparative example, the results of dicing properties were particularly inferior as compared with the respective examples. In each comparative example, unintentional peeling occurred at the interface between the adhesive layer and the first adhesive layer due to the pressure of the cutting water during dicing.

  Moreover, in each comparative example, pick-up property was also inferior compared with each Example. This is thought to be due to the fact that the adhesive force at the interface between the adhesive layer and the first adhesive layer was weakened by the pressure of the cutting water during dicing.

DESCRIPTION OF SYMBOLS 1 1st adhesion layer 11 Outer periphery 2 2nd adhesion layer 21 Outer periphery 22 Outer periphery 3, 31 Adhesive layer 32 Outer periphery 33 The part which protruded 4 Support film 41 Outer periphery 42 Outer periphery 4a, 4b Base material 5 Insulating substrate 61- 64 Laminated body 7 Semiconductor wafer 71 Semiconductor element 8, 8 'Laminated body 81 Notch 82 Dicing blade 83 Piece 84 Wire 85 Mold layer 86 Ball-shaped electrode 9 Wafer ring 10, 10' Semiconductor film 100 Semiconductor device 250 Die bonder 260 Collet 270 Heater 280 Device body 301 Nozzle 302 Worktable 3021 Outer periphery

Claims (12)

An adhesive layer and a support film are laminated, and a semiconductor wafer is attached to the surface of the adhesive layer opposite to the support film, and the surface of the support film opposite to the adhesive layer is placed on a work table. In this state, the semiconductor wafer and the adhesive layer are cut into individual pieces, and a semiconductor film used for picking up the obtained individual pieces from the support film,
The film for a semiconductor according to claim 1, wherein the adhesive layer has a shape such that an outer peripheral edge thereof is positioned outside an outer peripheral edge of the work table.   The film for semiconductor according to claim 1, wherein an adhesive layer is provided between the adhesive layer and the support film.   The film for a semiconductor according to claim 2, wherein an outer peripheral edge of the adhesive layer coincides with or is located on an inner side of the outer peripheral edge of the adhesive layer.   The film for a semiconductor according to claim 2, wherein the adhesive layer is composed of a plurality of layers having mutually different characteristics.   The pressure-sensitive adhesive layer includes a first pressure-sensitive adhesive layer that is in contact with the adhesive layer, a second pressure-sensitive adhesive layer that is in contact with a surface of the first pressure-sensitive adhesive layer opposite to the adhesive layer, and has higher adhesiveness than the first pressure-sensitive adhesive layer; The film for semiconductors of Claim 4 which has these.   The film for a semiconductor according to claim 5, wherein an outer peripheral edge of the adhesive layer and an outer peripheral edge of the first adhesive layer are respectively located on an inner side than an outer peripheral edge of the second adhesive layer.   The film for a semiconductor according to claim 1, wherein an outer peripheral edge of the support film is located outside an outer peripheral edge of the adhesive layer.   The film for semiconductor according to claim 2, wherein an ultraviolet ray is irradiated in advance on the surface of the adhesive layer on the surface of the adhesive layer on which the semiconductor wafer is laminated prior to lamination with the semiconductor wafer. The surface on the adhesive layer side of the film for semiconductor according to claim 1 is bonded to a semiconductor wafer to obtain a laminate, and the surface on the support film side of the laminate is placed on a work table. A process of placing;
A method of dividing a semiconductor wafer, comprising: cutting the semiconductor wafer into pieces by forming a cut in the stacked body from the semiconductor wafer side. Preparing a semiconductor film in which an adhesive layer and a support film are laminated;
A step of attaching a semiconductor wafer to the surface of the semiconductor film on the adhesive layer side to obtain a laminate, and placing the surface of the laminate on the support film side on a work table;
Cutting the semiconductor wafer into individual pieces by forming a cut in the laminate from the semiconductor wafer side while spraying cutting water,
A semiconductor wafer singulation method, wherein the cutting water is sprayed so that a center line of the cutting water passes inside an outer peripheral edge of the adhesive layer. The surface on the adhesive layer side of the film for semiconductor according to claim 1 is bonded to a semiconductor wafer to obtain a laminate, and the surface on the support film side of the laminate is placed on a work table. A process of placing;
Cutting the semiconductor wafer into pieces by forming a cut in the laminate from the semiconductor wafer side; and
And a step of picking up the obtained piece from the support film. A step of preparing a semiconductor film in which an adhesive layer, an adhesive layer, and a support film are laminated in this order;
Bonding the surface of the semiconductor film on the adhesive layer side to a semiconductor wafer to obtain a laminate, and placing the surface of the laminate on the support film side on a work table;
Cutting the semiconductor wafer into individual pieces by forming a cut in the laminate from the semiconductor wafer side while spraying cutting water,
The method of manufacturing a semiconductor device, wherein the cutting water is sprayed so that a center line of the cutting water passes inside an outer peripheral edge of the adhesive layer.

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