JP2012039025A - Film for semiconductor and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film for semiconductor which improves pickup and ensures manufacture of a highly reliable semiconductor device, and to provide a method of manufacturing a semiconductor device using such a film for semiconductor.SOLUTION: The film 10 for semiconductor supports a semiconductor wafer when it is laminated on an adhesion layer 3 and diced, and a first adhesive layer 1 and the adhesion layer 3 are peeled when individual pieces formed by individualization are picked up. Assuming adhesion between the adhesion layer 3 and the first adhesive layer 1 at 23°C is A1[N/m], and adhesion between the first adhesive layer 1 and the second adhesive layer 2 at 23°C is A2[N/m], a relation A1≤0.1×A2 is satisfied. Assuming adhesion between the adhesion layer 3 and the first adhesive layer 1 at 80°C is B1[N/m], and adhesion between the first adhesive layer 1 and the second adhesive layer 2 at 80°C is B2[N/m], a relation B1≤0.2×B2 is satisfied.

Description

  The present invention relates to a semiconductor film and a method for manufacturing a semiconductor device.

  In response to the recent increase in functionality of electronic devices and expansion to mobile applications, there is an increasing demand for higher density and higher integration of semiconductor devices, and IC packages are increasing in capacity and density.

  In these semiconductor device manufacturing methods, first, an adhesive sheet is attached to a semiconductor wafer made of silicon, gallium, arsenic, etc., and the semiconductor wafer is separated into individual semiconductors by a dicing process while fixing the periphery of the semiconductor wafer with a wafer ring. The device is cut and separated (divided into individual pieces). Next, an expanding process for separating the individual semiconductor elements separated from each other and a pickup process for picking up the separated semiconductor elements are performed. Thereafter, the picked-up semiconductor element is transferred to a die bonding process for mounting on a metal lead frame or a substrate (for example, a tape substrate, an organic hard substrate, etc.). Thereby, a semiconductor device is obtained.

  In the die bonding process, the picked-up semiconductor element is stacked on another semiconductor element, whereby a chip stack type semiconductor device in which a plurality of semiconductor elements are mounted in one package can be obtained.

  As an adhesive sheet used in such a method for manufacturing a semiconductor device, one obtained by laminating a first adhesive layer and a second adhesive layer in this order on a base film is known. (For example, refer to Patent Document 1).

  This adhesive sheet is subjected to the dicing process described above in a state of being attached to a semiconductor wafer. In the dicing step, the semiconductor wafer and the two adhesive layers are separated into a plurality of parts by providing a cut so that the tip of the dicing blade reaches the base film. In the pickup process, peeling occurs at the interface between the base film and the two adhesive layers, and the separated semiconductor element is picked up together with the separated two adhesive layers. Is done. The two adhesive layers picked up are responsible for adhesion between the separated semiconductor element and the metal lead frame (or substrate) in the die bonding step.

  However, when manufacturing a semiconductor device, excellent pick-up property, that is, an interface to be peeled without causing defects such as cracks and chips in a semiconductor element in the pick-up process (in the case of Patent Document 1, two layers of a base film and two layers) However, the conventional method has a problem that it is not sufficient.

JP 2004-43761 A

  An object of the present invention is to provide a semiconductor film capable of improving a pickup property and manufacturing a highly reliable semiconductor device, and a method for manufacturing a semiconductor device using such a semiconductor film.

Such an object is achieved by the present inventions (1) to (12) below.
(1) An adhesive layer, an adhesive layer, and a support film are laminated in this order, and a semiconductor wafer is laminated on the surface of the adhesive layer opposite to the adhesive layer, and in this state, the semiconductor wafer and the adhesive layer Is a film for semiconductors used when picking up the obtained individual pieces from the support film,
The pressure-sensitive adhesive layer has a first pressure-sensitive adhesive layer in contact with the adhesive layer, and a second pressure-sensitive adhesive layer provided on a surface opposite to the adhesive layer of the first pressure-sensitive adhesive layer,
The adhesion strength at 23 ° C. between the adhesive layer and the first adhesive layer is A1 [N / m], and the adhesion strength at 23 ° C. between the first adhesive layer and the second adhesive layer is A2 [N / M], the relationship of A1 ≦ 0.1 × A2 is satisfied,
The adhesive force at 80 ° C. between the adhesive layer and the first adhesive layer is B1 [N / m], and the adhesive force at 80 ° C. between the first adhesive layer and the second adhesive layer is B2 [N / M], a film for a semiconductor satisfying the relationship of B1 ≦ 0.2 × B2.

(2) having a protective film on the surface opposite to the adhesive layer side of the adhesive layer;
The outer peripheral edge of the adhesive layer and the outer peripheral edge of the first adhesive layer are located inside the outer peripheral edge of the second adhesive layer and the outer peripheral edge of the protective film, respectively.
The second adhesive layer and the protective film are in contact with each other at the outer periphery,
A3 [N / m] adhesion force at 23 ° C. between the adhesive layer and the protective film, A4 [N / m] adhesion force at 23 ° C. between the second adhesive layer and the protective film, When the contact area between the adhesive layer and the protective film is S3 [mm ² ] and the contact area between the second adhesive layer and the protective film is S4 [mm ² ], 0.1 ≦ A3 / A4 ≦ 1 0.0, and the film for a semiconductor according to (1), which satisfies the relationship of 1.0 ≦ S3 / S4 ≦ 10.0.

  (3) The adhesion strength at 23 ° C. between the adhesive layer and the first adhesive layer is A1 [N / m], and the adhesion strength at 23 ° C. between the adhesion layer and the protective film is A3 [N / m]. m], the film for a semiconductor according to the above (2) satisfying the relationship of A3 ≦ 1.0 × A1.

  (4) The said adhesive layer is a film for semiconductors in any one of said (1) thru | or (3) comprised with the resin composition containing a thermoplastic resin and a thermosetting resin.

  (5) The film for semiconductor according to (4), wherein the thermoplastic resin is an acrylic resin and / or a phenoxy resin.

  (6) The film for semiconductor according to (4) or (5), wherein the thermosetting resin is a phenol resin.

  (7) The film for a semiconductor according to any one of (1) to (6), wherein the adhesive force of the second adhesive layer is larger than the adhesive force of the first adhesive layer.

  (8) The film for semiconductor according to any one of (1) to (7), wherein the elastic modulus at 23 ° C. of the first adhesive layer is 0.2 to 4.0 GPa.

  (9) In the above (1) to (8), the region of the first adhesive layer on the side of the adhesive layer on which the semiconductor wafer is laminated is irradiated with ultraviolet rays in advance prior to the lamination with the semiconductor wafer. The film for semiconductors in any one.

(10) A laminate is prepared by laminating the semiconductor film and the semiconductor wafer so that the adhesive layer of the semiconductor film according to any one of (1) to (9) is in contact with the semiconductor wafer. A first step of:
A second step of obtaining a plurality of semiconductor elements by dividing the semiconductor wafer into pieces by providing a cut in the stacked body from the semiconductor wafer side;
And a third step of picking up the semiconductor element.

  (11) The method for manufacturing a semiconductor device according to (10), wherein the cut is provided so that a deepest portion thereof is located in the adhesive layer.

(12) In one of the cuts, the cross-sectional area of the tip side of the interface between the adhesive layer and the adhesive layer is 5 × 10 ^{−5 to} 300 × 10 ⁻⁵ mm ² above (10) or (11) The manufacturing method of the semiconductor device as described in (11).

  According to the present invention, even if heat is transmitted to an individual piece at the time of picking up the individual piece, it is possible to prevent the pickup property from being deteriorated. Therefore, according to the present invention, it is possible to obtain a semiconductor film capable of increasing the manufacturing yield of a semiconductor device and manufacturing a highly reliable semiconductor device.

It is a longitudinal cross-sectional view for demonstrating suitable embodiment of the film for semiconductors of this invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram (longitudinal sectional view) for explaining a preferred embodiment of a method for producing a semiconductor device of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram (longitudinal sectional view) for explaining a preferred embodiment of a method for producing a semiconductor device of the present invention. It is a figure for demonstrating the method to manufacture the film for semiconductors of this invention. It is a figure (longitudinal sectional view).

  Hereinafter, the film for semiconductor and the method for manufacturing a semiconductor device of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  1 to 3 are diagrams (longitudinal sectional views) for explaining a preferred embodiment of the semiconductor film of the present invention and the method of manufacturing the semiconductor device of the present invention, and FIG. 4 is a diagram of the semiconductor film of the present invention. It is a figure for demonstrating the method to manufacture. In the following description, the upper side in FIGS. 1 to 4 is referred to as “upper” and the lower side is referred to as “lower”.

[Semiconductor film]
A semiconductor film 10 shown in FIG. 1 includes a support film 4, a first adhesive layer 1, a second adhesive layer 2, an adhesive layer 3, and a protective film 11. More specifically, the semiconductor film 10 is formed by laminating the second adhesive layer 2, the first adhesive layer 1, the adhesive layer 3, and the protective film 11 on the support film 4 in this order. . Note that the protective film 11 may be omitted.

  After the protective film 11 is removed, such a semiconductor film 10 is obtained by laminating a semiconductor wafer 7 on the upper surface of the adhesive layer 3 and dicing the semiconductor wafer 7 by dicing as shown in FIG. At the time of supporting the semiconductor wafer 7 and picking up the separated semiconductor wafer 7 (semiconductor element 71), the first adhesive layer 1 and the adhesive layer 3 are selectively peeled off, It has a function of providing an adhesive layer 31 for adhering the picked-up semiconductor element 71 onto the insulating substrate 5. That is, the semiconductor film 10 and the adhesive layer 3 are separated into individual pieces, and the semiconductor film 10 is used to pick up the individual pieces 83 formed by laminating the semiconductor element 71 and the adhesive layer 31.

  Moreover, the outer peripheral part 41 of the support film 4 and the outer peripheral part 21 of the 2nd adhesion layer 2 exist outside the outer periphery 12 of the 1st adhesion layer 1, respectively, as shown to FIG. 1 and FIG. 2 (a). is doing.

  Among these, the wafer ring 9 is attached to the outer peripheral portion 21. Thereby, the semiconductor wafer 7 is reliably supported.

  Moreover, as shown in FIG. 1, the 2nd adhesion layer 2 and the protective film 11 are contacting in the outer peripheral part.

  By the way, in the manufacture of a semiconductor device, excellent pick-up properties, that is, characteristics that easily and surely cause peeling at the interface to be peeled without causing defects such as cracks and chips in the semiconductor element in the pick-up process are required. However, the conventional method has a problem that it is not sufficient.

  On the other hand, in the present invention, the adhesive force at 23 ° C. between the adhesive layer and the first adhesive layer is A1 [N / m], and the adhesive force at 23 ° C. between the first adhesive layer and the second adhesive layer. When the force is A2 [N / m], the relationship of A1 ≦ 0.1 × A2 is satisfied, and the adhesive force between the adhesive layer and the first adhesive layer at 80 ° C. is B1 [N / m]. The first adhesive layer and the second adhesive layer are characterized by being configured to satisfy the relationship of B1 ≦ 0.2 × B2, where B2 [N / m] is the adhesive force at 80 ° C. between the first adhesive layer and the second adhesive layer. is doing. With such a feature, it is possible to prevent the interface between the first adhesive layer and the second adhesive layer from unintentionally peeling when an individual piece is picked up. That is, peeling can be selectively caused at the interface between the first adhesive layer and the adhesive layer. In particular, even when the temperature of an individual piece rises due to heat accumulated when picked up continuously, stable pick-up performance can be realized, and a highly reliable semiconductor device can be manufactured.

Hereinafter, the configuration of each part of the semiconductor film 10 will be described in detail.
(First adhesive layer)
The first adhesive layer 1 is composed of a general adhesive. Specifically, the 1st adhesion layer 1 is comprised by the 1st resin composition containing an acrylic adhesive, a rubber-type adhesive, etc.

  Examples of the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, And copolymers with styrene, acrylonitrile, etc.). Two or more of these resins may be mixed.

  Of these, one or more selected from the group consisting of methyl (meth) acrylate, ethylhexyl (meth) acrylate and butyl (meth) acrylate, and selected from hydroxyethyl (meth) acrylate and vinyl acetate Preferred are copolymers with one or more of the above. Thereby, control of adhesiveness and adhesiveness with the other party (adherent body) which the 1st adhesion layer 1 adheres becomes easy.

  In addition, the first resin composition includes urethane acrylate, acrylate monomer, polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate) in order to control adhesiveness (adhesiveness). Monomers and oligomers such as isocyanate compounds may be added.

  Further, in the first resin composition, when the first adhesive layer 1 is cured by ultraviolet rays or the like, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone as a photopolymerization initiator, Acetophenone compounds such as 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholinopropane-1, benzophenone compounds, benzoin compounds, benzoin isobutyl ether compounds, methyl benzoin benzoate compounds, benzoin Benzoic acid compounds, benzoin methyl ether compounds, benzylfinyl sulfide compounds, benzyl compounds, dibenzyl compounds, diacetyl compounds and the like may be added.

  Also, for the purpose of increasing adhesive strength and shear strength, tackifying rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic petroleum resin, etc. Materials and the like may be added.

  The average thickness of the first adhesive layer 1 is not particularly limited, but is preferably about 1 to 100 μm, more preferably about 3 to 50 μm. If the thickness is less than the lower limit value, it may be difficult to ensure sufficient adhesive strength. If the thickness exceeds the upper limit value, the characteristics are not significantly affected, and no advantage is obtained. When the thickness is within the above range, the first adhesive layer 1 having excellent dicing properties and pick-up properties can be obtained because it does not peel off particularly during dicing and can be peeled off relatively easily with a tensile load during pick-up. can get.

(Second adhesive layer)
The second adhesive layer 2 has higher adhesiveness than the first adhesive layer 1 described above. As a result, the adhesion between the second adhesive layer 2 and the wafer ring 9 is more tightly adhered than between the first adhesive layer 1 and the adhesive layer 3, and in the second step, the semiconductor wafer 7 is diced. Thus, when separating into pieces, the space between the second adhesive layer 2 and the wafer ring 9 is securely fixed. As a result, the positional deviation of the semiconductor wafer 7 is reliably prevented, and the dimensional accuracy of the semiconductor element 71 can be prevented from being lowered.

  As the second adhesive layer 2, the same material as the first adhesive layer 1 described above can be used. Specifically, the second adhesive layer 2 is composed of a second resin composition containing an acrylic adhesive, a rubber adhesive, and the like.

  Examples of the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, Copolymers with styrene, acrylonitrile, etc.) are used. Two or more kinds of these copolymers may be mixed.

  Of these, one or more selected from the group consisting of methyl (meth) acrylate, ethylhexyl (meth) acrylate and butyl (meth) acrylate, and selected from hydroxyethyl (meth) acrylate and vinyl acetate Preferred are copolymers with one or more of the above. Thereby, control of adhesiveness and adhesiveness with the other party (adhered body) which the 2nd adhesion layer 2 adheres becomes easy.

  In addition, the second resin composition includes urethane acrylate, an acrylate monomer, and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate) in order to control adhesiveness (adhesiveness). Monomers and oligomers such as isocyanate compounds may be added.

  Furthermore, you may add the photoinitiator similar to a 1st resin composition to a 2nd resin composition.

  Also, for the purpose of increasing adhesive strength and shear strength, tackifying rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic petroleum resin, etc. Materials and the like may be added.

  The average thickness of the second adhesive layer 2 is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 3 to 20 μm. If the thickness is less than the lower limit, it may be difficult to ensure sufficient adhesive force, and even if the thickness exceeds the upper limit, a particularly excellent effect cannot be obtained. In addition, since the second adhesive layer 2 is higher in flexibility than the first adhesive layer 1, the shape following property of the second adhesive layer 2 is ensured if the average thickness of the second adhesive layer 2 is within the above range. Thus, the adhesion of the semiconductor film 10 to the semiconductor wafer 7 can be further enhanced.

(Adhesive layer)
The adhesive layer 3 is made of a third resin composition containing, for example, a thermoplastic resin and a thermosetting resin. Such a resin composition is excellent in film forming ability, adhesiveness, and heat resistance after curing.

  Among these, examples of the thermoplastic resin include polyimide resins such as polyimide resins and polyetherimide resins, polyamide resins such as polyamide resins and polyamideimide resins, acrylic resins, and phenoxy resins. Among these, acrylic resins are preferable. Since the acrylic resin has a low glass transition temperature, the initial adhesion of the adhesive layer 3 can be further improved.

  The acrylic resin means acrylic acid and its derivatives. Specifically, acrylic esters such as acrylic acid, methacrylic acid, methyl acrylate, and ethyl acrylate, and methacrylates such as methyl methacrylate and ethyl methacrylate. Examples thereof include polymers such as acid esters, acrylonitrile, and acrylamide, and copolymers with other monomers.

  Among acrylic resins, acrylic resins (particularly acrylic ester copolymers) having a compound having a functional group such as epoxy group, hydroxyl group, carboxyl group, nitrile group (copolymerization monomer component) are preferable. Thereby, the adhesiveness to adherends, such as semiconductor element 71, can be improved more. Specific examples of the compound having a functional group include glycidyl methacrylate having a glycidyl ether group, hydroxy methacrylate having a hydroxyl group, carboxy methacrylate having a carboxyl group, and acrylonitrile having a nitrile group.

  Further, the content of the compound having a functional group is not particularly limited, but is preferably about 0.5 to 40% by mass, more preferably about 5 to 30% by mass of the entire acrylic resin. . When the content is less than the lower limit, the effect of improving the adhesion may be reduced, and when the content exceeds the upper limit, the adhesive force is too strong and the effect of improving the workability may be reduced.

  The glass transition temperature of the thermoplastic resin is not particularly limited, but is preferably −25 to 120 ° C., more preferably −20 to 60 ° C., and further preferably −10 to 50 ° C. preferable. If the glass transition temperature is less than the lower limit, the adhesive strength of the adhesive layer 3 may be increased and workability may be reduced. If the glass transition temperature exceeds the upper limit, the effect of improving the low temperature adhesiveness may be reduced.

  Further, the weight average molecular weight of the thermoplastic resin (particularly acrylic resin) is not particularly limited, but is preferably 100,000 or more, particularly preferably 150,000 to 1,000,000. When the weight average molecular weight is within the above range, the film formability of the adhesive layer 3 can be particularly improved.

  The thermoplastic resin preferably contains a phenoxy resin. Thereby, the pick-up property can be further improved. Moreover, the phenoxy resin can improve heat resistance by also showing curability.

  On the other hand, as the thermosetting resin, for example, a novolac type phenol resin such as a phenol novolak resin, a cresol novolak resin, a bisphenol A novolak resin, a phenol resin such as a resol phenol resin, a bisphenol type such as a bisphenol A epoxy resin and a bisphenol F epoxy resin. Epoxy resin, novolac epoxy resin, cresol novolac epoxy resin, etc. novolac epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, triazine nucleus-containing epoxy resin, Epoxy resins such as dicyclopentadiene-modified phenolic epoxy resins, urea (urea) resins, resins having a triazine ring such as melamine resins, Examples include polyester resins, bismaleimide resins, polyurethane resins, diallyl phthalate resins, silicone resins, resins having a benzoxazine ring, cyanate ester resins, and the like, and one or a mixture of two or more of these may be used. Good. Of these, epoxy resins or phenol resins are preferred. According to these resins, the heat resistance and adhesion of the adhesive layer 3 can be further improved.

  Further, the content of the thermosetting resin is not particularly limited, but is preferably about 0.05 to 400 parts by mass, particularly about 0.1 to 100 parts by mass with respect to 100 parts by mass of the thermoplastic resin. Is more preferable. If the content exceeds the upper limit, chipping and cracking may occur, or the effect of improving the adhesion may be reduced.If the content is lower than the lower limit, the adhesive force is too strong and pickup failure is caused. This may occur or the effect of improving workability may be reduced.

  Further, in addition to these thermosetting resins or in place of these thermosetting resins, a phenoxy resin can also be included. Thereby, the outstanding pick-up property and heat resistance can be reconciled.

  The third resin composition preferably further contains a curing agent (in particular, when the thermosetting resin is an epoxy resin, a phenolic curing agent).

  Examples of the curing agent include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylenediamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), diaminodiphenylsulfone ( DDS) and other aromatic polyamines, dicyandiamide (DICY), amine-based curing agents such as polyamine compounds containing organic acid dihydralazide, and the like, alicyclic acids such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA) Acid anhydride curing agents such as anhydrides (liquid acid anhydrides), trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), and benzophenone tetracarboxylic acid (BTDA), phenolic resins Phenolic Agents, and the like. Among these, a phenolic curing agent is preferable, and specifically, bis (4-hydroxy-3,5-dimethylphenyl) methane (common name: tetramethylbisphenol F), 4,4′-sulfonyldiphenol, 4,4′- Isopropylidenediphenol (commonly called bisphenol A), bis (4-hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane, and bis (4- Hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane, a mixture of three types (for example, bisphenol FD manufactured by Honshu Chemical Industry Co., Ltd.) Bisphenols, 1,2-benzenediol, 1,3-benzenedio Dihydroxybenzenes such as 1,4-benzenediol, trihydroxybenzenes such as 1,2,4-benzenetriol, various isomers of dihydroxynaphthalenes such as 1,6-dihydroxynaphthalene, 2,2′- Examples include compounds such as various isomers of biphenols such as biphenol and 4,4′-biphenol.

  Further, the content of the curing agent (particularly phenol-based curing agent) is not particularly limited, but is preferably 1 to 400 parts by mass, particularly 3 to 100 parts by mass with respect to 100 parts by mass of the thermoplastic resin. Is more preferable. If the content is less than the lower limit, the effect of improving the heat resistance of the adhesive layer 3 may be reduced, and if the content exceeds the upper limit, the storage stability of the adhesive layer 3 may be reduced.

  Further, when the thermosetting resin described above is an epoxy resin, it can be determined by calculating the equivalent ratio of the epoxy equivalent and the curing agent. The epoxy equivalent of the epoxy resin and the equivalent of the functional group of the curing agent (for example, phenol resin) If present, the ratio of hydroxyl equivalent) is preferably 0.5 to 1.5, particularly preferably 0.7 to 1.3. When the content is less than the lower limit value, the storage stability may be lowered, and when the content exceeds the upper limit value, the effect of improving the heat resistance may be lowered.

  Further, the third resin composition is not particularly limited, but preferably further includes a curing catalyst. Thereby, the sclerosis | hardenability of the contact bonding layer 3 can be improved.

  Examples of the curing catalyst include amine catalysts such as imidazoles and 1,8-diazabicyclo (5,4,0) undecene, phosphorus catalysts such as triphenylphosphine, and the like. Of these, imidazoles are preferred. Thereby, especially quick curability and preservability can be made compatible.

  Examples of imidazoles include 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 1-cyanoethyl-2- Phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1 ′)]-Ethyl-s-triazine, 2,4-diamino-6- [2′-ethyl-4′methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6 -[2'-Methylimidazolyl- (1 ')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole Null acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4-diamino-6-vinyl-s-triazine, 2,4-diamino -6-vinyl-s-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-s-triazine, 2,4-diamino-6-methacryloyloxyethyl-s-triazine isocyanuric acid adduct, etc. Can be mentioned. Among these, 2-phenyl-4,5-dihydroxymethylimidazole or 2-phenyl-4-methyl-5-hydroxymethylimidazole is preferable. Thereby, the storage stability can be particularly improved.

  Further, the content of the curing catalyst is not particularly limited, but is preferably about 0.01 to 30 parts by mass, particularly about 0.5 to 10 parts by mass with respect to 100 parts by mass of the thermoplastic resin. More preferred. If the content is less than the lower limit, the curability may be insufficient, and if the content exceeds the upper limit, the storage stability may decrease.

  The average particle diameter of the curing catalyst is not particularly limited, but is preferably 10 μm or less, and more preferably 1 to 5 μm. When the average particle size is within the above range, the reactivity of the curing catalyst is particularly excellent.

  The third resin composition is not particularly limited, but preferably further includes a coupling agent. Thereby, the adhesiveness of resin, a to-be-adhered body, and a resin interface can be improved more.

  Examples of the coupling agent include a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent. Of these, silane coupling agents are preferred. Thereby, heat resistance can be improved more.

  Among these, as the silane coupling agent, for example, vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane, N-β (aminoethyl) γ-aminopropylmethyl Dimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysila N-phenyl-γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, bis (3 -Triethoxysilylpropyl) tetrasulfane and the like.

  Although content of a coupling agent is not specifically limited, It is preferable that it is about 0.01-10 mass parts with respect to 100 mass parts of thermoplastic resins, and it is more about 0.5-10 mass parts especially. preferable. If the content is less than the lower limit, the effect of adhesion may be insufficient, and if it exceeds the upper limit, it may cause outgassing or voids.

  In forming the adhesive layer 3, such a third resin composition is dissolved in a solvent such as methyl ethyl ketone, acetone, toluene, dimethylformaldehyde and the like to form a varnish, followed by a comma coater, a die coater, The adhesive layer 3 can be obtained by coating on a carrier film using a gravure coater or the like and drying.

  The average thickness of the adhesive layer 3 is not particularly limited, but is preferably about 3 to 100 μm, and more preferably about 5 to 70 μm. When the thickness is within the above range, it is particularly easy to control the thickness accuracy.

  Moreover, the 3rd resin composition may contain the filler as needed. By including the filler, the mechanical properties and adhesive strength of the adhesive layer 3 can be improved.

  Examples of the filler include particles of silver, titanium oxide, silica, mica, and the like.

  Moreover, it is preferable that the average particle diameter of a filler is about 0.01-25 micrometers. If the average particle size is less than the lower limit, the effect of filler addition is reduced, and if it exceeds the upper limit, the adhesive strength as a film may be reduced.

  Although content of a filler is not specifically limited, It is preferable that it is about 0.1-200 mass parts with respect to 100 mass parts of thermoplastic resins, and it is especially more preferable that it is about 5-150 mass parts. Thereby, the adhesive force can be further increased while enhancing the mechanical properties of the adhesive layer 3.

(Support film)
The support film 4 is a support that supports the first adhesive layer 1, the second adhesive layer 2, and the adhesive layer 3 as described above.

  Examples of the constituent material of the support film 4 include polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, and ethylene vinyl acetate copolymer. , Ionomer, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, vinyl polyisoprene, polycarbonate, etc., and one or a mixture of two or more of these Is mentioned.

  The average thickness of the support film 4 is not particularly limited, but is preferably about 5 to 200 μm, and more preferably about 30 to 150 μm. Thereby, since the support film 4 has moderate rigidity, the first adhesive layer 1, the second adhesive layer 2, and the adhesive layer 3 are reliably supported to facilitate the handling of the semiconductor film 10. At the same time, when the semiconductor film 10 is appropriately curved, adhesion to the semiconductor wafer 7 can be enhanced.

(Protective film)
The protective film 11 has a function of protecting the second adhesive layer 2 and the adhesive layer 3 as described above.

  Examples of such a protective film 11 include a polyester film, a polyethylene film, a polyethylene terephthalate film, and a polypropylene film.

  Although the average thickness of the protective film 11 is not specifically limited, It is preferable that it is about 10-100 micrometers, and it is more preferable that it is about 20-50 micrometers.

  The surface of the protective film 11 in contact with the second adhesive layer 2 and the adhesive layer 3 may be subjected to a known peeling process.

(Characteristics of semiconductor film)
As described above, in the present invention, the adhesive force between the adhesive layer 3 and the first adhesive layer 1 at 23 ° C. is A1 [N / m], and the adhesive force between the first adhesive layer 1 and the second adhesive layer 2 is 23. When the adhesive strength at C is A2 [N / m], the relationship of A1 ≦ 0.1 × A2 is satisfied, but it is more preferable that the relationship of A1 ≦ 0.08 × A2 is satisfied, and A1 ≦ 0. It is more preferable to satisfy the relationship of 05 × A2. Thereby, the effect of this invention can be made more remarkable.

  In addition, as described above, in the present invention, the adhesive force at 80 ° C. between the adhesive layer 3 and the first adhesive layer 1 is B1 [N / m], and the first adhesive layer 1 and the second adhesive layer 2 When the adhesive strength at 80 ° C. is B2 [N / m], the relationship B1 ≦ 0.2 × B2 is satisfied, but it is more preferable that the relationship B1 ≦ 0.15 × B2 is satisfied. More preferably, the relationship of ≦ 0.1 × B2 is satisfied. Thereby, the effect of this invention can be made more remarkable.

  Note that “N / m”, which is a unit of the adhesion between the adhesive layer 3 and the first adhesive layer 1, is a 25 mm wide strip of a sample in which the adhesive layer 3 is attached to the surface of the first adhesive layer 1. Then, at 23 ° C. (room temperature) and 80 ° C., the load (unit N) when the adhesive layer 3 part was peeled off at a peeling angle of 180 ° and a pulling speed of 1000 mm / min in this laminated film was measured per 1 m width. (1000 mm / 25 mm = 40 times). That is, here, the adhesion between the first adhesive layer 1 and the adhesive layer 3 and the adhesion between the first adhesive layer 1 and the second adhesive layer 2 will be described as 180 ° peel strength. In addition, “N / m”, which is a unit of the adhesion between the first adhesive layer 1 and the second adhesive layer 2, applies the first adhesive layer 1 to the surface of the second adhesive layer 2 on the support film 4. The laminated and pasted sample was formed into a 25 mm wide strip, and then at 23 ° C. (room temperature) and 80 ° C., the second adhesive layer 2 portion of the laminated film together with the support film 4 had a peeling angle of 180 ° and a tensile speed. The load (unit N) when peeled off at 1000 mm / min is a value converted per 1 m width (1000 mm / 25 mm = 40 times). That is, here, the adhesion between the first adhesive layer 1 and the second adhesive layer 2 will be described as 180 ° peel strength.

  Further, the adhesion strength at 23 ° C. between the adhesive layer 3 and the protective film 11 is A3 [N / m], and the adhesion strength at 23 ° C. between the second adhesive layer 2 and the protective film 11 is A4 [N / m]. ], It is preferable to satisfy the relationship of 0.1 ≦ A3 / A4 ≦ 1.0, and it is more preferable to satisfy the relationship of 0.1 ≦ A3 / A4 ≦ 0.5. By satisfying such a relationship, the peelability of the protective film 11 can be made higher, and the productivity of the semiconductor device can be improved.

  Note that “N / m”, which is the unit of adhesion between the adhesive layer 3 and the protective film 11, is a 25 mm wide strip of a sample in which the adhesive layer 3 is pasted on the surface of the protective film 11. At 23 ° C. (room temperature), the load (unit N) when the adhesive layer 3 part was peeled off at a peeling angle of 180 ° and a pulling speed of 1000 mm / min in this laminated film was converted per 1 m width (1000 mm / 25 mm). = 40 times). That is, here, the adhesive layer 3, the protective film 11, and the adhesion force will be described as 180 ° peel strength. In addition, “N / m”, which is a unit of adhesion between the second adhesive layer 2 and the protective film 11, is a sample in which the protective film 11 is attached to the surface of the second adhesive layer 2 on the support film 4. Is a strip having a width of 25 mm, and then, at 23 ° C. (room temperature), the load when the second adhesive layer 2 portion is peeled off together with the support film 4 at a peeling angle of 180 ° and a pulling speed of 1000 mm / min. This is a value obtained by converting (unit N) per 1 m width (1000 mm / 25 mm = 40 times). That is, here, the second adhesive layer 2, the protective film 11, and the adhesion are described as 180 ° peel strength.

Moreover, simultaneously with satisfying the above relationship, when the contact area between the adhesive layer 3 and the protective film 11 is S3 [mm ² ] and the contact area between the second adhesive layer 2 and the protective film 11 is S4 [mm ² ], It is preferable that the relationship of 1.0 ≦ S3 / S4 ≦ 10.0 is satisfied, and it is more preferable that the relationship of 3.0 ≦ S3 / S4 ≦ 10.0 is satisfied. By satisfying such a relationship, the peelability of the protective film 11 can be further increased, and the productivity of the semiconductor device can be further improved.

  Further, the adhesive force at 23 ° C. between the adhesive layer 3 and the first adhesive layer 1 is A1 [N / m], and the adhesive force at 23 ° C. between the adhesive layer 3 and the protective film 11 is A3 [N / m]. ], It is preferable to satisfy the relationship of A3 ≦ 1.0 × A1, and it is more preferable to satisfy the relationship of A3 ≦ 0.5 × A1. By satisfying such a relationship, the peelability of the protective film 11 can be further increased, and the productivity of the semiconductor device can be further improved.

  Moreover, it is preferable that the adhesive force of the first adhesive layer 1 to the adhesive layer 3 is smaller than the adhesive force of the second adhesive layer 2 to the wafer ring 9. Thereby, in the 3rd process mentioned later, when picking up the piece 83, between the adhesion layer 3 and the 1st adhesion layer 1 without peeling between the 2nd adhesion layer 2 and the wafer ring 9, Peels selectively. When dicing, the laminated body 8 can be reliably supported by the wafer ring 9.

  That is, in this embodiment, since the two adhesive layers of the first adhesive layer 1 and the second adhesive layer 2 are used, the adhesion of the laminate 8 can be ensured as described above by making the respective adhesive forces different. Therefore, it is possible to achieve both the simple fixing and the easy pickup of the piece 83. In other words, it is possible to more appropriately achieve both dicing properties and pickup properties.

  The adhesion force of the first adhesive layer 1 to the adhesive layer 3 and the adhesion force of the second adhesive layer 2 to the wafer ring 9 are respectively the kind (composition) of the acrylic resin, the kind of monomer, and the like. It can be adjusted by changing the amount, hardness and the like.

  Further, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 is preferably smaller than the adhesion force of the adhesive layer 3 to the semiconductor wafer 7. Thereby, when the piece 83 is picked up, it is possible to prevent the interface between the semiconductor wafer 7 and the adhesive layer 3 from being unintentionally peeled off. That is, peeling can be selectively caused at the interface between the first adhesive layer 1 and the adhesive layer 3.

(Manufacturing method of semiconductor film)
The semiconductor film 10 as described above is manufactured, for example, by the following method.

  First, the base material 4a shown in FIG. 4A is prepared, and the first adhesive layer 1 is formed on one surface of the base material 4a. Thereby, the laminated body 61 of the base material 4a and the 1st adhesion layer 1 is obtained. The first adhesive layer 1 is formed by applying the above-described resin varnish containing the first resin composition by various application methods and then drying the applied film, or laminating a film made of the first resin composition. It can be performed by a method or the like. Further, the coating film may be cured by irradiating radiation such as ultraviolet rays.

  Examples of the coating method include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method.

  Further, similarly to the laminated body 61, as shown in FIG. 4A, the adhesive layer 3 is formed on one surface of the prepared base material 4b, whereby the base material 4b and the adhesive layer 3 are formed. The laminate 62 is obtained.

  Further, in the same manner as each of the laminates 61 and 62, as shown in FIG. 4A, the second adhesive layer 2 is formed on one surface of the prepared support film 4, and thereby the support film 4 And the second adhesive layer 2 are obtained.

  Next, as illustrated in FIG. 4B, the stacked body 61 and the stacked body 62 are stacked so that the first adhesive layer 1 and the adhesive layer 3 are in contact with each other to obtain a stacked body 64. This lamination can be performed by, for example, a roll lamination method.

  Next, as shown in FIG. 4C, the base material 4 a is peeled from the laminate 64. And as shown in FIG.4 (d), the outer side part of the effective area | region of the said adhesive layer 3 and the said 1st adhesion layer 1 leaves the base material 4b with respect to the laminated body 64 which peeled the said base material 4a. Is removed in a ring shape. Here, the effective area refers to an area whose outer periphery is larger than the outer diameter of the semiconductor wafer 7 and smaller than the inner diameter of the wafer ring 9.

  Next, as shown in FIG. 4 (e), a laminate in which the base 4 a is peeled off and the outer portion of the effective area is removed in a ring shape so that the second adhesive layer 2 is in contact with the exposed surface of the first adhesive layer 1. 64 and the laminated body 63 are laminated. Then, the film 10 for semiconductors shown in FIG.4 (f) is obtained by peeling the base material 4b. In addition, as shown in FIG. 1, the protective film 11 can be stuck to the contact bonding layer 3 side as needed, and the base material 4b can also be left as the protective film 11 as it is.

[Method for Manufacturing Semiconductor Device]
Next, a method for manufacturing the semiconductor device 100 using the semiconductor film 10 as described above (a method for manufacturing a semiconductor device of the present invention) will be described.

  2 and 3, the semiconductor device 7 is manufactured by laminating the semiconductor wafer 7 and the semiconductor film 10 to obtain the laminated body 8, and the outer peripheral portion 21 of the semiconductor film 10 is bonded to the wafer ring 9. The semiconductor wafer 7 and the adhesive layer 3 are separated into individual pieces by providing a cut 81 in the laminated body 8 from the side of the semiconductor wafer 7 (dicing), and a plurality of semiconductor elements 71 and adhesive layers 31 are formed. A second step of obtaining the piece 83; a third step of picking up at least one of the pieces 83; and a fourth step of obtaining the semiconductor device 100 by placing the picked piece 83 on the insulating substrate 5. It has these processes. Hereinafter, each step will be described in detail.

[1]
[1-1] First, a semiconductor film 10 with the semiconductor wafer 7 and the protective film 11 peeled off is prepared.

  The semiconductor wafer 7 has a plurality of circuits formed on its surface in advance. Examples of the semiconductor wafer 7 include a silicon semiconductor, a compound semiconductor wafer such as gallium arsenide and gallium nitride.

  The average thickness of the semiconductor wafer 7 is not particularly limited, and is preferably about 0.01 to 1 mm, more preferably about 0.03 to 0.5 mm. According to the method for manufacturing a semiconductor device of the present invention, the semiconductor wafer 7 having such a thickness can be cut into pieces easily and reliably without causing defects such as chipping and cracking. .

  [1-2] Next, as shown in FIG. 2A, the semiconductor film 10 and the semiconductor wafer 7 are bonded to each other while the adhesive layer 3 of the semiconductor film 10 and the semiconductor wafer 7 are brought into close contact with each other. Are stacked (first step). In the semiconductor film 10 shown in FIG. 2, the size and shape of the adhesive layer 3 in plan view are set in advance to be larger than the outer diameter of the semiconductor wafer 7 and smaller than the inner diameter of the wafer ring 9. Has been. For this reason, the entire lower surface of the semiconductor wafer 7 is in close contact with the entire upper surface of the adhesive layer 3, whereby the semiconductor wafer 7 is supported by the semiconductor film 10.

  As a result of the above lamination, as shown in FIG. 2B, a laminated body 8 in which the semiconductor film 10 and the semiconductor wafer 7 are laminated is obtained.

[2]
[2-1] Next, a wafer ring 9 is prepared. Subsequently, the stacked body 8 and the wafer ring 9 are stacked so that the upper surface of the outer peripheral portion 21 of the second adhesive layer 2 and the lower surface of the wafer ring 9 are in close contact with each other. Thereby, the outer peripheral part of the laminated body 8 is supported by the wafer ring 9.

  Since the wafer ring 9 is generally made of various metal materials such as stainless steel and aluminum, the wafer ring 9 has high rigidity and can surely prevent the laminate 8 from being deformed.

  By having two adhesive layers (first adhesive layer 1 and second adhesive layer 2) having different adhesiveness as described above, the semiconductor film 10 utilizes the difference in adhesiveness, Both dicing and pickup properties can be achieved.

  [2-2] Next, a dicer table (not shown) is prepared, and the laminate 8 is placed on the dicer table so that the dicer table and the support film 4 are in contact with each other.

Subsequently, as shown in FIG. 2C, a plurality of cuts 81 are formed in the laminate 8 using a dicing blade 82 (dicing). The dicing blade 82 is composed of a disk-shaped diamond blade or the like, and a cut 81 is formed by pressing the dicing blade 82 against the surface of the laminated body 8 on the semiconductor wafer 7 side. Then, the semiconductor wafer 7 is separated into a plurality of semiconductor elements 71 by relatively moving the dicing blade 82 along the gap between the circuit patterns formed on the semiconductor wafer 7 (second step). ). Similarly, the adhesive layer 3 is divided into a plurality of adhesive layers 31. During such dicing, vibration and impact are applied to the semiconductor wafer 7, but the lower surface of the semiconductor wafer 7 is supported by the semiconductor film 10, so that the vibration and impact are alleviated. As a result, the occurrence of defects such as cracks and chippings in the semiconductor wafer 7 can be reliably prevented.
This step will be described in detail later.

[3]
[3-1] Next, the laminate 8 in which the plurality of cuts 81 are formed is radially expanded (expanded) by an expanding device (not shown). As a result, as shown in FIG. 2D, the width of the cuts 81 formed in the stacked body 8 is increased, and accordingly, the interval between the semiconductor elements 71 separated into pieces is also increased. As a result, there is no possibility that the semiconductor elements 71 interfere with each other, and the individual semiconductor elements 71 can be easily picked up. Note that the expanding device is configured to maintain such an expanded state even in a process described later.

  [3-2] Next, one of the separated semiconductor elements 71 is adsorbed by a collet (chip adsorbing portion) of the die bonder and pulled upward by a die bonder (not shown). As a result, as shown in FIG. 3E, the interface between the adhesive layer 31 and the first adhesive layer 1 is selectively peeled off, and an individual piece 83 formed by laminating the semiconductor element 71 and the adhesive layer 31 is picked up. (Third step).

  Note that the reason why the interface between the adhesive layer 31 and the first adhesive layer 1 is selectively peeled is that the adhesive property of the second adhesive layer 2 is higher than the adhesive property of the first adhesive layer 1 as described above. The adhesive force at the interface between the film 4 and the second adhesive layer 2 and the adhesive force at the interface between the second adhesive layer 2 and the first adhesive layer 1 are based on the adhesive force between the first adhesive layer 1 and the adhesive layer 3. Because it is big. That is, when the semiconductor element 71 is picked up, the interface between the first adhesive layer 1 and the adhesive layer 3 having the smallest adhesion among these three locations is selectively peeled off.

  Further, when picking up the individual piece 83, the individual piece 83 to be picked up may be selectively pushed up from below the semiconductor film 10. Thereby, since the piece 83 is pushed up from the laminated body 8, the pickup of the piece 83 mentioned above can be performed more easily. In order to push up the individual piece 83, a needle-like body (needle) that pushes up the semiconductor film 10 from below is used.

[4]
[4-1] Next, the insulating substrate 5 for mounting (mounting) the semiconductor element 71 (chip) is prepared.

  Examples of the insulating substrate 5 include an insulating substrate on which a semiconductor element 71 is mounted and wiring and terminals for electrically connecting the semiconductor element 71 and the outside are provided.

Specifically, flexible substrates such as polyester copper-clad film substrates, polyimide copper-clad film substrates, aramid copper-clad film substrates, glass-based copper-clad laminates such as glass cloth and epoxy copper-clad laminates, and glass nonwoven fabrics -Composite copper-clad laminates such as epoxy copper-clad laminates, heat-resistant and thermoplastic substrates such as polyetherimide resin substrates, polyetherketone resin substrates, polysulfone resin substrates, alumina substrates, aluminum nitride substrates And ceramic substrates such as silicon carbide substrates, bismaleimide-triazine (BT) substrates, and the like.
Instead of the insulating substrate 5, a lead frame or the like may be used.

  Next, as shown in FIG. 3F, the picked-up piece 83 is placed on the insulating substrate 5.

  [4-2] Next, as shown in FIG. 3G, the pieces 83 placed on the insulating substrate 5 are heated and pressure-bonded. As a result, the semiconductor element 71 and the insulating substrate 5 are bonded (die bonding) via the adhesive layer 31 (fourth step).

  As conditions for heating and pressure bonding, for example, the heating temperature is preferably about 100 to 300 ° C, and more preferably about 100 to 200 ° C. Further, the pressure bonding time is preferably about 1 to 10 seconds, and more preferably about 1 to 5 seconds.

  Moreover, you may heat-process after that. The heating conditions in this case are such that the heating temperature is preferably about 100 to 300 ° C., more preferably about 150 to 250 ° C., and the heating time is preferably about 1 to 240 minutes, more preferably about 10 to 60 minutes. The

  Thereafter, a terminal (not shown) of the semiconductor element 71 and a terminal (not shown) on the insulating substrate 5 are electrically connected by a wire 84. For this connection, instead of the wire 84, a conductive paste, a conductive film, or the like may be used.

  Then, the individual pieces 83 and the wires 84 placed on the insulating substrate 5 are covered with a resin material to form a mold layer 85. Examples of the resin material constituting the mold layer 85 include various mold resins such as an epoxy resin.

  Further, a semiconductor device as shown in FIG. 3 (h) in which a semiconductor element 71 is accommodated in a package by bonding a ball-shaped electrode 86 to a terminal (not shown) provided on the lower surface of the insulating substrate 5. 100 is obtained.

  According to the method as described above, in the third step, the adhesive layer 31 is picked up in the state where the adhesive layer 31 is attached to the semiconductor element 71, that is, in the state of the piece 83. Can be used for bonding to the insulating substrate 5 as they are. For this reason, it is not necessary to separately prepare an adhesive or the like, and the manufacturing efficiency of the semiconductor device 100 can be further increased.

  According to the semiconductor film 10 as described above, even if the temperature of the collet of the die bonder rises and the temperature of the laminated body 8 rises accordingly, it is possible to prevent the pickup property from being lowered.

  By the way, the manufacturing method of the semiconductor device of the present invention including the step of dicing the semiconductor wafer 7 using the semiconductor film 10 as described above is particularly characterized in the second step.

First, prior to the description of this feature, a conventional dicing process will be described.
The conventional dicing process is performed such that the tip of the dicing blade penetrates the semiconductor wafer, the adhesive layer, and each adhesive layer, and reaches the support film.

  However, as a result of the tip of the dicing blade reaching the support film, the support film is scraped, and shavings are generated. And this shavings will move to the periphery of each adhesion layer, the periphery of an adhesive layer, and the periphery of a semiconductor wafer, without staying around a support film, and will bring about various malfunctions. Specifically, when picking up a semiconductor element, the chip is caught, or in the fourth process described later, shavings enter between the insulating substrate and the semiconductor element, or the chips formed on the semiconductor wafer are scraped. May cause problems such as sticking and hindering wire bonding.

  On the other hand, in this embodiment, in the second step, the cutting depth is set so that the tip of the dicing blade 82 remains in the adhesive layer. In other words, the dicing is performed so that the tip of the cut 81 does not reach the support film 4 and remains in the first adhesive layer 1. If it does in this way, since the shavings of the support film 4 cannot generate | occur | produce, the problem accompanying the shavings as mentioned above will be eliminated reliably. That is, when the semiconductor element 71 is picked up, the occurrence of catching or the like is prevented, and when the picked-up semiconductor element 71 is mounted on the insulating substrate 5, the entry of foreign matters and the occurrence of defective wire bonding are prevented. As a result, the manufacturing yield of the semiconductor device 100 can be improved, and the highly reliable semiconductor device 100 can be obtained.

  In particular, by performing dicing so that the front end of the notch 81 is positioned in the first adhesive layer 1, the components of the second adhesive layer 2 can pass through the notch 81 and the periphery of the adhesive layer 3 or the semiconductor wafer 7. It is prevented from oozing out to the periphery. As a result, it is possible to prevent the exuded substance from unintentionally increasing the adhesion between the adhesive layer 3 and the first adhesive layer 1 and to prevent a problem that hinders the pickup of the piece 83. Can do. Furthermore, it is possible to prevent the exuded substance from causing deterioration or deterioration of the semiconductor element 71.

  Such exudation of the component inevitably causes the second adhesive layer 2 to be more flexible than the first adhesive layer 1 because the adhesiveness of the second adhesive layer 2 is stronger than the adhesiveness of the first adhesive layer 1. Therefore, the substance contained in the second adhesive layer 2 is considered to be a phenomenon caused by the fact that the fluidity and the outflow property are higher than those of the first adhesive layer 1. That is, as in this embodiment, the adhesive layer is composed of a plurality of layers, and the adhesive layer on the support film 4 side (in FIG. 1, the first adhesive layer 1 in FIG. 1) (the adhesive layer 3 side in FIG. 1). When the adhesiveness of the second adhesive layer 2) is strong, as shown in FIG. 1C, it is particularly effective to prevent the above-mentioned problems to keep the tip of the notch 81 in the first adhesive layer 1. .

  From the above viewpoint, the elastic modulus at 23 ° C. of the second adhesive layer 2 is preferably smaller than the elastic modulus at 23 ° C. of the first adhesive layer 1. Thereby, the second adhesive layer 2 is surely higher in adhesiveness than the first adhesive layer 1, while the first adhesive layer 1 is excellent in pick-up property.

  Moreover, it is preferable that the elasticity modulus in 23 degreeC of the 1st adhesion layer 1 is about 0.2-4.0 GPa, and it is more preferable that it is about 0.5-2.0 GPa. While the first pressure-sensitive adhesive layer 1 having such an elastic modulus has moderately low adhesiveness, the fluidity and flowability of the components can be relatively suppressed, so that a cut 81 is formed in the first pressure-sensitive adhesive layer 1. Even so, it is possible to achieve both improvement in pick-up property and prevention of problems due to leaching of substances from the first adhesive layer 1. The elastic modulus can be measured by a general tensile test or the like.

  In addition, the melt viscosity at 60 ° C. of the second adhesive layer 2 is preferably about 1000 to 10,000 Pa · s, and more preferably about 3000 to 10,000 Pa · s. Since the second adhesive layer 2 having such a melt viscosity has sufficient adhesiveness, the fluidity and flowability of the components can be relatively suppressed, so that the dicing property (the laminate 8 and the wafer ring 9 in dicing) It is possible to achieve both improvement of the fixing property and prevention of defects due to the exudation of the substance. The melt viscosity can be measured by a general shear measurement test or the like.

From the above viewpoint, the cross-sectional area of the portion of the notch 81 on the tip side from the interface between the adhesive layer 3 and the first adhesive layer 1 is the thickness of the dicing blade 82, the adhesive layers 1, Although it differs depending on the thickness of 2, it is preferably about ^{5 to} 300 (× 10 ⁻⁵ mm ² ), more preferably about 10 to 200 (× 10 ⁻⁵ mm ² ). Of the cuts 81, by setting the cross-sectional area of the portion on the tip side from the interface between the adhesive layer 3 and the first adhesive layer 1 within the above range, the adhesive layer 3 is surely separated into pieces and the first adhesive The cross-sectional area of the cut portion with respect to the layer 1 can be minimized. As a result, it is possible to achieve both a reliable pickup of the individual pieces 83 and a suppression of the exudation of components from the first adhesive layer 1 at a high level.

  Moreover, when the film thickness of the 1st adhesion layer 1 is set to t, it is preferable that the depth of the part located in the 1st adhesion layer 1 among the notches 81 is 0.2t-0.8t, 0 More preferably, it is 3 to 0.7 t. Thereby, reliable pick-up of the piece 83 and suppression of the exudation of the component from the 1st adhesion layer 1 can be made to make compatible both more highly.

  As described above, the front end of the notch 81 is retained in the first adhesive layer 1, or even if not, the cross-sectional area of the front end side portion of the notch 81 from the interface between the adhesive layer 3 and the first adhesive layer 1 In the above range, the exudation of the component from the first adhesive layer 1 and the second adhesive layer 2 can be minimized, so that the exudation of this component adheres to the first adhesive layer 1. The influence on the adhesion with the layer 3 is also minimized. As a result, it is possible to prevent the close contact force from increasing unintentionally and hindering the pick-up property of the piece 83.

  Further, in the present embodiment, the semiconductor wafer 7 and the adhesive layer 3 are surely separated into pieces by retaining the tip of the cut 81 in the first adhesive layer 1, while the first adhesive layer 1 and the second adhesive layer 2 is not singulated. Therefore, when picking up the piece 83 in the third step, the first adhesive layer 1 and the second adhesive layer 2 should be left on the support film 4 side, but unintentionally stuck to the piece 83 side. Picking up in a state can be prevented. This is because, since the first adhesive layer 1 and the second adhesive layer 2 are not separated into individual pieces, the connection in the surface direction is maintained, so that the adhesion between the first adhesive layer 1 and the second adhesive layer 2 is maintained. This is because a decrease in the adhesion between the second adhesive layer 2 and the support film 4 is prevented. That is, the adhesive force between the first adhesive layer 1 and the second adhesive layer 2 and the adhesive force between the second adhesive layer 2 and the support film 4 have sufficient resistance against the upward pulling force in the pickup. Because.

  As mentioned above, although the film for semiconductors of this invention and the manufacturing method of a semiconductor device were demonstrated based on embodiment of illustration, this invention is not limited to these.

  For example, the package form is a CSP (Chip Size Package) such as BGA (Ball Grid Array) or LGA (Land Grid Array), a surface mount type package such as TCP (Tape Carrier Package), or DIP (Dual Inline Package). Further, it may be an insertion type package such as PGA (Pin Grid Array), and is not particularly limited.

  In the above-described embodiment, the case where the piece 83 is mounted on the insulating substrate 5 has been described. However, the piece 83 may be mounted on another semiconductor element. That is, the method for manufacturing a semiconductor device of the present invention can also be applied to manufacturing a chip stack type semiconductor device in which a plurality of semiconductor elements are stacked. Thereby, there is no possibility of pick-up failure or the possibility of chips entering between the semiconductor elements, and a highly reliable chip stack type semiconductor device can be manufactured with a high manufacturing yield.

  In the embodiment described above, the adhesive layer has a two-layer structure. However, the present invention is not limited to this, and may be three or more layers.

  Moreover, in the method for manufacturing a semiconductor device of the present invention, an optional step can be added as necessary.

Hereinafter, specific examples of the present invention will be described.
1. Manufacturing of a semiconductor device (Example 1)
<1> Formation of first adhesive layer Copolymer having a weight average molecular weight of 300,000 obtained by copolymerizing 30% by mass of 2-ethylhexyl acrylate and 70% by mass of vinyl acetate as an acrylic adhesive 100 parts by mass, 60 parts by mass of a bifunctional urethane acrylate having a molecular weight of 11,000, 5 parts by mass of 2,2-dimethoxy-2-phenylacetophenone as a photopolymerization initiator, and tolylene diisocyanate (coronate as a crosslinking agent) 3 parts by mass of T-100 (manufactured by Nippon Polyurethane Industry Co., Ltd.) was dissolved in a mixed solvent of ethyl acetate and toluene to obtain a resin varnish having a resin solid content of 30% by mass.

Next, it apply | coated so that the thickness after drying might be set to 30 micrometers with respect to the 38-micrometer-thick polyethylene terephthalate film which peeled the obtained resin varnish, and it dried at 80 degreeC after that for 5 minutes. And the ultraviolet-ray 500mJ / cm < ² > was irradiated with respect to the obtained coating film, and the 1st adhesion layer was formed into a film on the polyethylene terephthalate film.
In addition, the elastic modulus in 23 degreeC of the obtained 1st adhesion layer was 1.0 GPa.

<2> Formation of Second Adhesive Layer A copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 70% by mass of butyl acrylate and 30% by mass of 2-ethylhexyl acrylate as an acrylic adhesive 100 parts by mass and 3 parts by mass of tolylene diisocyanate (Coronate T-100, manufactured by Nippon Polyurethane Industry Co., Ltd.) as a crosslinking agent are dissolved in a mixed solvent of ethyl acetate and toluene, and the resin solid content is 30% by mass. The resin varnish was obtained.

Next, it apply | coated so that the thickness after drying might be set to 10 micrometers with respect to the 38-micrometer-thick polyethylene terephthalate film which peeled the obtained resin varnish, Then, it dried for 5 minutes at 80 degreeC. And the 2nd adhesion layer was formed into a film on the polyethylene terephthalate film. Thereafter, a polyethylene sheet having a thickness of 100 μm was laminated as a support film.
In addition, the melt viscosity in 60 degreeC of the obtained 2nd adhesion layer was 3500 Pa.s.

<3> Formation of Adhesive Layer Acrylic ester copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl methacrylate copolymer methyl ethyl ketone (MEK) / toluene as (meth) acrylic ester copolymer 100 parts by mass as a solid component of dissolved product, manufactured by Nagase ChemteX Corporation, SG-708-6, Tg: 6 ° C., weight average molecular weight: 500,000), phenoxy resin (JER1256, Mw: 50000), Mitsubishi Chemical Corporation 9.8 parts by mass), 90.8 parts by mass of spherical silica (SC1050, average particle size 0.3 μm, manufactured by Admatex Co., Ltd.) as an inorganic filler (filler), and γ− as a coupling agent Glycidoxypropyltrimethoxysilane (KBM403E, Shin-Etsu Chemical) 1.1 parts by mass of phenolic resin (PR-53647, hydroxyl group equivalent 104 g / OH group, manufactured by Sumitomo Bakelite Co., Ltd.) 0.1 parts by mass in methyl ethyl ketone was dissolved in resin solids 20 A mass% resin varnish was obtained.

  Next, the obtained resin varnish was applied to a polyethylene terephthalate film (manufactured by Teijin DuPont Films, product number Purex A43, thickness 38 μm) with a comma coater, and then dried at 150 ° C. for 3 minutes to obtain a polyethylene terephthalate film. An adhesive layer having a thickness of 25 μm was formed thereon.

<4> Manufacture of a film for semiconductor A film in which a first adhesive layer is formed and a film in which an adhesive layer is formed are laminated (laminated) so that the first adhesive layer and the adhesive layer are in contact with each other. The layer-side polyethylene terephthalate film was peeled off to obtain a laminate.

  Next, using a roll-shaped die, the first adhesive layer and the adhesive layer are punched out to be larger than the outer diameter of the semiconductor wafer and smaller than the inner diameter of the wafer ring, and then unnecessary portions are removed, and the second laminated body is removed. Got.

  Further, the polyethylene terephthalate film on one surface side of the second adhesive layer is peeled off. And these were laminated | stacked so that the 1st adhesion layer and 2nd adhesion layer of a said 2nd laminated body might contact | connect. Thereby, the film for semiconductors formed by laminating five layers of the polyethylene sheet (support film), the second adhesive layer, the first adhesive layer, the adhesive layer, and the polyethylene terephthalate film (protective film) in this order was obtained.

(Example 2)
A film for semiconductor was produced in the same manner as in Example 1 except that the resin composition constituting the adhesive layer and the adhesive layer was the one shown in Table 1.

(Comparative example)
A film for semiconductor was produced in the same manner as in Example 1 except that the resin composition constituting the adhesive layer and the adhesive layer was the one shown in Table 1.

  Table 1 shows the composition of the resin composition constituting each layer, the elastic modulus at 23 ° C. of the first adhesive layer, and the melt viscosity at 60 ° C. of the second adhesive layer in each of the above Examples and Comparative Examples. The adhesion strength and the like are shown in Table 2. In the table, the adhesion strength at 23 ° C. between the adhesive layer 3 and the first adhesive layer 1 is A1, and the adhesion strength at 23 ° C. between the first adhesive layer 1 and the second adhesive layer 2 is A2. The adhesive strength at 80 ° C. between the layer 3 and the first adhesive layer 1 is B1, the adhesive strength at 80 ° C. between the first adhesive layer 1 and the second adhesive layer 2 is B2, and the adhesive layer 3 and the protective film 11 The adhesive strength at 23 ° C. between the second adhesive layer 2 and the protective film 11 was indicated as A4. Moreover, the contact area of the protective film 11 and the contact bonding layer 3 was shown as S3, and the contact area of the 2nd adhesion layer 2 and the protective film 11 was shown as S4.

2. Manufacturing of Semiconductor Device First, an 8-inch silicon wafer having a thickness of 100 μm was prepared.

  And the polyester film was peeled from the film for semiconductors of each Example and a comparative example, and the silicon wafer was laminated | stacked on the peeling surface at 60 degreeC. Thereby, the laminated body formed by laminating five layers of the film for semiconductor and the silicon wafer in this order was obtained.

  Next, the laminate was diced (cut) from the silicon wafer side using a dicing saw (DFD6360, manufactured by DISCO Corporation) under the following conditions. As a result, the silicon wafer was singulated, and a semiconductor element having the following dicing size was obtained.

<Dicing conditions>
・ Dicing size: 10 mm × 10 mm square ・ Dicing speed: 50 mm / sec
・ Spindle speed: 40,000 rpm
・ Maximum depth of dicing: 0.130 mm (the amount of cut from the surface of the silicon wafer)
・ Dicing blade thickness: 15μm
・ Cross sectional area: 7.5 × 10 ⁻⁵ mm ² (cross sectional area at the tip side from the interface between the adhesive layer and the first adhesive layer)

  In addition, the notch formed by this dicing had the front-end | tip reached in the 1st adhesion layer.

  Next, one of the semiconductor elements was pushed up with a needle from the back surface of the semiconductor film, and the pushed up surface of the semiconductor element was pulled up while being adsorbed by a collet of a die bonder. As a result, individual pieces of the semiconductor element and the adhesive layer were picked up.

Next, the picked-up pieces are applied to a bismaleimide-triazine resin substrate (circuit level difference: 5 to 10 μm) coated with a solder resist (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: AUS308) at a temperature of 130 ° C. and a load of 5 N. For 1.0 second and die bonded.
Next, the semiconductor element and the resin substrate were electrically connected by wire bonding.

  Then, the semiconductor element and the bonding wire on the resin substrate were sealed with a sealing resin EME-G760 (trade name, manufactured by Sumitomo Bakelite Co., Ltd.) and subjected to a heat treatment at a temperature of 175 ° C. for 2 hours. Thereby, the sealing resin was cured to obtain a semiconductor device.

3. Evaluation of Dicing Property and Pickup Property The dicing property in each example and comparative example was good. Further, chipping or peeling of the semiconductor element did not occur during dicing.

In each of the examples, it was found that the pickup can be stably performed. For this reason, in each Example, it became clear that malfunctions, such as a crack of a semiconductor element, and a chip | tip, can be suppressed reliably.
On the other hand, in the comparative example, a satisfactory result was not obtained in the pickup.

DESCRIPTION OF SYMBOLS 1 1st adhesion layer 12 Outer periphery 2 2nd adhesion layer 21 Outer peripheral part 3, 31 Adhesive layer 4 Support film 41 Outer peripheral part 4a, 4b Base material 5 Insulating substrate 61-64 Laminated body 7 Semiconductor wafer 71 Semiconductor element 8 Laminated body 81 Cut 82 Dicing blade 83 Piece 84 Wire 85 Mold layer 86 Ball electrode 9 Wafer ring 10 Semiconductor film 11 Protective film 100 Semiconductor device

Claims (12)

The adhesive layer, the adhesive layer, and the support film are laminated in this order, and a semiconductor wafer is laminated on the surface of the adhesive layer opposite to the adhesive layer, and in this state, the semiconductor wafer and the adhesive layer are cut. A film for a semiconductor to be used when picking up the obtained individual piece from the support film,
The pressure-sensitive adhesive layer has a first pressure-sensitive adhesive layer in contact with the adhesive layer, and a second pressure-sensitive adhesive layer provided on a surface opposite to the adhesive layer of the first pressure-sensitive adhesive layer,
The adhesion strength at 23 ° C. between the adhesive layer and the first adhesive layer is A1 [N / m], and the adhesion strength at 23 ° C. between the first adhesive layer and the second adhesive layer is A2 [N / M], the relationship of A1 ≦ 0.1 × A2 is satisfied,
The adhesive force at 80 ° C. between the adhesive layer and the first adhesive layer is B1 [N / m], and the adhesive force at 80 ° C. between the first adhesive layer and the second adhesive layer is B2 [N / M], a film for a semiconductor satisfying the relationship of B1 ≦ 0.2 × B2. Having a protective film on the surface opposite to the adhesive layer side of the adhesive layer;
The outer peripheral edge of the adhesive layer and the outer peripheral edge of the first adhesive layer are located inside the outer peripheral edge of the second adhesive layer and the outer peripheral edge of the protective film, respectively.
The second adhesive layer and the protective film are in contact with each other at the outer periphery,
A3 [N / m] adhesion force at 23 ° C. between the adhesive layer and the protective film, A4 [N / m] adhesion force at 23 ° C. between the second adhesive layer and the protective film, When the contact area between the adhesive layer and the protective film is S3 [mm ² ] and the contact area between the second adhesive layer and the protective film is S4 [mm ² ], 0.1 ≦ A3 / A4 ≦ 1 The film for a semiconductor according to claim 1, wherein 0.0 and 1.0 ≦ S3 / S4 ≦ 10.0 are satisfied.   The adhesion strength at 23 ° C. between the adhesive layer and the first adhesive layer is A1 [N / m], and the adhesion strength at 23 ° C. between the adhesion layer and the protective film is A3 [N / m]. The semiconductor film according to claim 2, wherein the film satisfies the relationship of A3 ≦ 1.0 × A1.   The said adhesive layer is a film for semiconductors in any one of Claim 1 thru | or 3 comprised with the resin composition containing a thermoplastic resin and a thermosetting resin.   The film for semiconductor according to claim 4, wherein the thermoplastic resin is an acrylic resin and / or a phenoxy resin.   The film for semiconductor according to claim 4, wherein the thermosetting resin is a phenol resin.   The film for a semiconductor according to any one of claims 1 to 6, wherein the adhesive strength of the second adhesive layer is larger than the adhesive strength of the first adhesive layer.   The film for a semiconductor according to any one of claims 1 to 7, wherein the first adhesive layer has an elastic modulus at 23 ° C of 0.2 to 4.0 GPa.   9. The semiconductor according to claim 1, wherein a region of the surface of the first adhesive layer on the adhesive layer side where the semiconductor wafer is laminated is irradiated with ultraviolet rays in advance prior to lamination with the semiconductor wafer. Film. A first step of preparing a laminate formed by laminating the semiconductor film and the semiconductor wafer so that the adhesive layer of the semiconductor film according to claim 1 and the semiconductor wafer are in contact with each other. ,
A second step of obtaining a plurality of semiconductor elements by dividing the semiconductor wafer into pieces by providing a cut in the stacked body from the semiconductor wafer side;
And a third step of picking up the semiconductor element.   The method of manufacturing a semiconductor device according to claim 10, wherein the cut is provided so that a deepest portion thereof is located in the adhesive layer. The cross-sectional area of a portion on the tip side from the interface between the adhesive layer and the pressure-sensitive adhesive layer in one notch is 5 × 10 ^{−5 to} 300 × 10 ⁻⁵ mm ² . A method for manufacturing a semiconductor device.

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