JP5703584B2 - Processing device and liquid delivery / suction device - Google Patents

Description

The present invention relates to a processing apparatus and a liquid delivery / suction apparatus .

  Conventionally, as one method of processing the surface of an object to be processed (glass, crystal, silicon wafer, etc.), an etching solution delivered from a nozzle is locally supplied to the surface to be processed of the object to be processed. There is known so-called local wet etching in which an etching process is performed on the entire surface of a processing object by moving the processing object relatively (for example, Patent Document 1).

  The surface processing apparatus described in Patent Document 1 has a nozzle assembly having a plurality of nozzles arranged in a row, and the nozzle assembly includes a plurality of nozzles along the surface to be processed of the object to be processed. It is possible to move in a direction perpendicular to the arrangement direction. Each nozzle is provided with a heater, and the temperature of the etching solution delivered from each nozzle can be controlled. In such an apparatus, by adjusting the temperature of the etching solution delivered from each nozzle, the etching rate is made different at each point (small area) facing the nozzle assembly on the surface to be processed, whereby a predetermined profile is obtained. Can be obtained.

  However, in such an apparatus, it takes a certain time from the time when the etching solution is sent from the nozzle assembly (each nozzle) to the time when the sending of the etching solution becomes stable. End up. Therefore, the surface processing apparatus disclosed in Patent Document 1 cannot perform a desired etching process on a region etched within a certain time from the start of the etching process on the surface to be processed.

Here, in order to solve the above problems, the etching solution is sent from each nozzle in a state where the nozzle assembly is moved to the side of the object to be processed (position not facing the surface to be processed). A method of starting the etching process by moving the nozzle assembly to a position facing the surface to be processed after the feeding of the nozzle is stabilized can be considered. However, in such a method, when the nozzle assembly crosses the edge of the surface to be processed, the etching solution sent from the nozzle assembly penetrates the side surface of the object to be processed and enters the surface opposite to the surface to be processed. However, there arises a problem that the etching process is performed up to a portion where the workpiece is not necessary.
As described above, the surface processing apparatus of Patent Document 1 has a problem in that a desired etching process cannot be performed on an object to be processed.

JP 2007-200754 A

An object of the present invention is to provide a processing apparatus and a liquid delivery / suction apparatus capable of performing a desired etching process on an object to be processed .

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
[Application Example 1]
The processing apparatus of the present invention is a processing apparatus for processing into a desired shape by supplying an etching solution to a workpiece,
A support base for supporting the object to be processed;
A nozzle having a delivery port for delivering the etching solution to the object to be processed and a suction port for sucking the etching solution delivered from the delivery port;
A shutter device having a shutter unit,
The support base and the nozzle move relative to each other;
In the shutter device, the shutter unit is disposed between the object to be processed and the delivery port, and a shut-off state in which the supply of the etching liquid from the delivery port to the object to be processed is blocked, and the shutter unit includes the retracted from between the object to be treated and the outlet, can select and supply state for supplying the etchant to the object to be treated from said outlet port,
Delivery of the etchant from the start from the outlet, until the flow rate per unit of time the etchant is delivered from the delivery port reaches a predetermined value, the shutter portion is Ru the blocking state near It is characterized by that.
Thereby, the processing apparatus which can perform a desired etching process with respect to a to-be-processed object can be provided.

[Application Example 2]
In the processing apparatus of the present invention, the shutter portion is blocked until the temperature of the etching solution delivered from the delivery port reaches a predetermined value after delivery of the etching solution from the delivery port is started. It is preferable that it exists in a state.
Accordingly, since the entire area of the object to be processed can be processed at a predetermined etching rate, the object to be processed can be etched with high accuracy.
[Application Example 3]
The processing apparatus of the present invention is a processing apparatus for processing into a desired shape by supplying an etching solution to a workpiece,
A support base for supporting the object to be processed;
A nozzle having a delivery port for delivering the etching solution to the object to be processed and a suction port for sucking the etching solution delivered from the delivery port;
A shutter device having a shutter unit,
The support base and the nozzle move relative to each other;
In the shutter device, the shutter unit is disposed between the object to be processed and the delivery port, and a shut-off state in which the supply of the etching liquid from the delivery port to the object to be processed is blocked, and the shutter unit includes Retreat from between the object to be processed and the delivery port, and can select a supply state for supplying the etching solution from the delivery port to the object to be processed,
The shutter unit is in the shut-off state until the temperature of the etching solution delivered from the delivery port reaches a predetermined value after delivery of the etching solution from the delivery port is started. To do.
[Application Example 4]
In the processing apparatus of the present invention, the shutter unit until the flow rate per unit time of the etching solution delivered from the delivery port reaches a predetermined value after delivery of the etching solution from the delivery port is started. It has preferred that but is in the blocking state.

[Application Example 5 ]
In the processing apparatus of this invention, it is preferable that the said shutter part exists between the said nozzle and the edge of the said to-be-processed object.
Thereby, a highly accurate etching process can be performed with respect to a to-be-processed object.
[Application Example 6 ]
In the processing apparatus of the present invention, it is preferable to shut off the supply of the etching liquid to the object to be processed by setting the shutter portion in the blocking state in a state where the etching liquid is being sent out from the delivery port. .
Thereby, a highly accurate etching process can be performed with respect to a to-be-processed object.

[Application Example 7 ]
In the processing apparatus of this invention, it is preferable that the said shutter part changes from the said supply state to the said interruption | blocking state, with the said nozzle and the said to-be-processed object facing.
Thereby, a highly accurate etching process can be performed with respect to a to-be-processed object.
[Application Example 8 ]
In the processing apparatus of the present invention, when the supply of the etching solution to the object to be processed is finished, the etching unit is sent from the delivery port after the shutter portion is changed from the supply state to the blocking state. Is preferably stopped.
Thereby, a highly accurate etching process can be performed with respect to a to-be-processed object.

[Application Example 9 ]
In the processing apparatus of the present invention, it is preferable that when the supply of the etching liquid to the object to be processed is temporarily stopped, the shutter unit is changed from the supply state to the cutoff state.
Thereby, a highly accurate etching process can be performed with respect to a to-be-processed object.

[Application Example 10 ]
In the processing apparatus of the present invention, when the supply of the etching solution to the object to be processed is temporarily stopped, the shutter unit is moved while maintaining the state in which the etching solution is sent from the delivery port. It is preferable to make the said cutoff state from supply.
Thereby, a highly accurate etching process can be performed with respect to a to-be-processed object.

[Application Example 11 ]
In the processing apparatus according to the aspect of the invention, it is preferable that the shutter portion moves integrally with the nozzle.
As a result, the shutter unit can be brought into the shut-off state or the supply state reliably and quickly.
[Application Example 12 ]
The liquid delivery and suction device of the present invention is a liquid delivery and suction device that delivers and sucks liquid,
A support base;
A nozzle having a delivery port for delivering the liquid to the support and a suction port for sucking the liquid delivered from the delivery port;
A shutter device having a shutter unit,
The support base and the nozzle move relative to each other;
In the shutter device, the shutter unit is disposed between the support base and the delivery port, and a blocking state in which the supply of the liquid from the delivery port to the support table is blocked, and the shutter unit is the support table And the supply state of retreating from between the outlet and supplying the liquid from the outlet to the support base can be selected,
The shutter portion is in the shut-off state until the flow rate per unit time of the etching solution delivered from the delivery port reaches a predetermined value after delivery of the etching solution from the delivery port is started. It is characterized by.
[Application Example 13 ]
The liquid delivery and suction device of the present invention is a liquid delivery and suction device that delivers and sucks liquid,
A support base;
A nozzle having a delivery port for delivering the liquid to the support and a suction port for sucking the liquid delivered from the delivery port;
A shutter device having a shutter unit,
The support base and the nozzle move relative to each other;
In the shutter device, the shutter unit is disposed between the support base and the delivery port, and a blocking state in which the supply of the liquid from the delivery port to the support table is blocked, and the shutter unit is the support table And the supply state of retreating from between the outlet and supplying the liquid from the outlet to the support base can be selected,
The shutter unit is in the shut-off state until the temperature of the etching solution delivered from the delivery port reaches a predetermined value after delivery of the etching solution from the delivery port is started. you.

It is a figure which shows schematic structure of 1st Embodiment of the surface processing apparatus of this invention. It is a figure which shows the structure of the temperature control part which the surface processing apparatus shown in FIG. 1 has. It is the top view and sectional drawing which show the shutter which the surface processing apparatus shown in FIG. 1 has. It is sectional drawing explaining the function of the shutter shown in FIG. It is a top view which shows the movement route of the nozzle with respect to a workpiece | work. It is a block diagram of the control part which the surface processing apparatus shown in FIG. 1 has. It is a top view of the nozzle with which the surface treatment apparatus concerning 2nd Embodiment of this invention is provided. It is a top view which shows the modification of the nozzle shown in FIG. It is a top view of the shutter with which the surface treatment apparatus concerning 3rd Embodiment of this invention is provided.

Hereinafter, a processing apparatus (surface processing apparatus) of the present invention to which a liquid delivery / suction apparatus of the present invention is applied will be described in detail based on an embodiment shown in the accompanying drawings.
<First Embodiment>
1 is a diagram showing a schematic configuration of a first embodiment of a surface processing apparatus of the present invention, FIG. 2 is a diagram showing a configuration of a temperature control unit included in the surface processing apparatus shown in FIG. 1, and FIG. FIG. 4 is a sectional view for explaining the function of the shutter shown in FIG. 3, FIG. 5 is a plan view showing a moving route of the nozzle with respect to the workpiece, and FIG. These are block diagrams of the control part which the surface processing apparatus shown in FIG. 1 has. In the following description, the upper side in FIGS. 1 and 4 is referred to as “upper”, the lower side is referred to as “lower”, the left side in FIG. 4 is referred to as “left”, and the right side is referred to as “right”.

The surface processing apparatus 1 is an apparatus that performs a desired etching process on a workpiece (object to be processed) 10 by local wet etching.
The constituent material of the workpiece 10 subjected to the etching treatment is not particularly limited. For example, various glasses such as quartz glass and alkali-free glass, crystalline materials such as quartz, various ceramics such as alumina, silica, and titania, silicon, Consists of various semiconductor materials such as gallium arsenide, carbon materials such as diamond and graphite, dielectric materials such as various plastics (resin materials) such as polyethylene, polystyrene, polycarbonate, polyethylene terephthalate, liquid crystal polymer, phenol resin, acrylic resin, etc. And various other metal materials such as aluminum, copper, and iron-based metals.
Moreover, the shape of the workpiece | work 10 is not specifically limited, For example, plate shape, a block shape, etc. may be sufficient. Moreover, it does not specifically limit as a planar view shape of the workpiece | work 10, For example, a square, a rectangle, circular, etc. may be sufficient. In the following, for convenience of explanation, the workpiece 10 will be described as a representative example in which the shape in plan view is a rectangular plate shape.

  A surface processing apparatus 1 shown in FIG. 1 has a support device 2 that supports a workpiece 10 and an etching solution supply device 3 that supplies an etching solution to a surface 101 of the workpiece 10, and is supported by the support device 2. A desired etching process is performed on the workpiece 10 by supplying an etching solution to the processing target surface 101 of the workpiece 10 by the etching solution supply device 3.

Hereinafter, the support device 2 and the etching solution supply device 3 will be sequentially described in detail.
[Supporting device]
As shown in FIG. 1, the support device 2 includes a chucking plate (support base) 21 and fixing means 22.
(Chucking plate)
The chucking plate 21 has a function of supporting the workpiece 10. The chucking plate 21 having such a function has a plate shape in this embodiment. However, the shape of the chucking plate 21 is not particularly limited as long as the workpiece 10 can be supported, and may not be a plate shape.

  The lower surface of the chucking plate 21 constitutes a chucking surface 211 that supports the workpiece 10. The chucking surface 211 is constituted by a flat surface, for example. Thereby, when the workpiece 10 is supported on the chucking surface 211, the workpiece 10 can be prevented from being deformed following the shape of the chucking surface 211. In addition, when the workpiece 10 is supported on the chucking surface 211, a gap is not easily formed between the chucking surface 211 and the workpiece 10, so that the workpiece 10 can be surely and easily secured by the fixing means 22 using air chucking. Can be fixed to the chucking surface 211.

(Fixing means)
The fixing means 22 has a function of fixing the workpiece 10 to the chucking surface 211. By fixing the workpiece 10 to the chucking surface 211, the posture and position of the workpiece 10 with respect to the chucking plate 21 can be kept constant during the etching process, so that a desired etching process can be performed on the workpiece 10. . In particular, in the surface processing apparatus 1 as in the present embodiment, since the workpiece 10 is supported so as to be suspended from the chucking plate 21, the fixing means 22 can prevent the workpiece 10 from falling from the chucking plate 21. it can.

  As shown in FIG. 1, the fixing means 22 includes a plurality of intake holes 221 that are formed in the chucking plate 21 and open to the chucking surface 211, and a suction pump 222 that is connected to each intake hole 221. Yes. The opening of each intake hole 221 is closed by the work 10 in a state where the work 10 is supported by the chucking surface 211. Such a fixing means 22 sucks and fixes the workpiece 10 to the chucking surface 211 by operating the suction pump 222 while the workpiece 10 is supported on the chucking surface 211 and reducing the pressure in each intake hole 221. To do. According to the fixing means 22 having such a configuration, the workpiece 10 can be easily fixed to the chucking surface 211. Moreover, the workpiece | work 10 can be easily removed from the chucking surface 211 only by returning the inside of the air intake hole 221 to a normal pressure.

[Etching solution supply device]
The etching solution supply device 3 has a function of supplying an etching solution to the processing target surface (lower surface) 101 of the workpiece 10 fixed to the chucking plate 21 and performing a desired etching process on the workpiece 10.
As shown in FIG. 1, the etching solution supply device 3 is provided between a nozzle 4 provided so as to be movable along a processing target surface 101 (chucking surface 211) of the workpiece 10 and the nozzle and the workpiece 10. And a control unit 6 that controls the driving of the nozzle 4 and the shutter device 5, and an etching solution circulation device 7 that sends and recovers the etching solution from the nozzle 4.

(nozzle)
As shown in FIG. 1, the nozzle 4 is provided so as to be positioned below the workpiece 10 (surface 101 to be processed) fixed to the chucking plate 21. The nozzle 4 includes an outer tube 41 and an inner tube 42 provided inside the outer tube 41. In addition, it does not specifically limit as a cross-sectional shape of the outer tube | pipe 41 and the inner tube | pipe 42, For example, it can be set as a square, a circle | round | yen, etc.

  In such a nozzle 4, the etching solution is sent from the upper end of the nozzle 4 through the inner tube 42, and is sucked (collected) through the gap 43 between the inner tube 42 and the outer tube 41. That is, in the nozzle 4, the upper opening of the inner tube 42 constitutes an etching solution outlet 4 a, and the upper opening of the gap 43 constitutes an etching solution suction port 4 b. The configuration of the nozzle 4 is not particularly limited as long as the etching solution can be sent out and sucked. For example, contrary to the present embodiment, the etching solution contains a gap 43 between the inner tube 42 and the outer tube 41. It may be configured to be sent out through the inner pipe 42 and collected through the inner pipe 42.

(Etch solution circulation device)
The etchant circulation device 7 includes a delivery pipe 71 that sends the etchant from the delivery port 4a of the nozzle 4, a recovery pipe 72 that collects the etchant from the suction port 4b of the nozzle 4, and a storage tank 73 that stores the etchant. , A liquid feed pump 74 for sending the etchant from the storage tank 73 to the delivery pipe 71, a flow rate adjusting valve 75 and a flow meter 76 for regulating the flow rate of the etchant sent to the delivery pipe 71, and the surface to be processed 101 of the workpiece 10. A suction pump 77 for sucking and collecting the etching solution adhering to the substrate (etching solution used for the etching process), and a temperature control unit 78 for adjusting (controlling) the temperature of the etching solution sent from the nozzle 4; have.

  Each of these devices is connected in the order of a storage tank 73, a liquid feed pump 74, a flow rate adjustment valve 75, a flow meter 76, a delivery pipe 71, and a recovery pipe 72, and the recovery pipe 72 and the storage tank 73 are connected to circulate. A path 79 is formed. The suction pump 77 sucks the etching solution from the suction port 4b by reducing the pressure in the storage tank 73. In addition, it is preferable to use what has flexibility so that the movement of the nozzle 4 can be followed for the delivery pipe | tube 71 and the collection | recovery pipe | tube 72. FIG. Further, all the parts that come into contact with the etching solution are made of a material that is not corroded by the etching solution.

  The temperature control unit 78 has a function of maintaining the etching solution in the storage tank 73 at a predetermined temperature. Thereby, the etching liquid sent out from the delivery port 4a can be maintained at a predetermined temperature. Here, the etching rate (etching depth per unit time) for the workpiece 10 varies depending on the temperature of the etching solution, and generally the etching rate increases as the temperature of the etching solution increases. Therefore, by providing the temperature control unit 78 and maintaining the temperature of the etching solution delivered from the delivery port 4a at a desired temperature, the workpiece 10 can be subjected to a more accurate etching process.

  The configuration of the temperature control unit 78 is not particularly limited, but for example, a configuration as shown in FIG. 2 can be used. In the configuration shown in FIG. 2, the temperature control unit 78 is provided in the storage tank 73, provided in the storage tank 73, and a temperature detection element 781 that detects the temperature of the etching solution in the storage tank 73. The heater 782 for heating the etching solution therein and a drive control unit 783 for controlling the driving (ON / OFF, output value) of the heater 782 based on the detection result of the temperature detection element 781. According to such a configuration, the configuration of the temperature control unit 78 can be simplified, and the etching solution in the storage tank 73 can be more reliably set to a predetermined temperature. The temperature controller 78 may further include a cooling unit that cools the etching liquid in the storage tank 73. By combining the heater 782 and the cooling means, the etching solution in the storage tank 73 can be more accurately maintained at a predetermined temperature.

The temperature detection element 781 is not particularly limited as long as the temperature of the etching solution in the storage tank 73 can be detected. For example, a contact-type temperature sensor such as a platinum resistance thermometer or a thermistor, a radiation thermometer ( A non-contact temperature sensor such as a thermopile can be used.
The heater 782 is not particularly limited as long as the etching solution in the storage tank 73 can be heated. For example, a linear heating element such as a nichrome wire may be used, or a planar heating element such as a silicon rubber heater may be used. The body may be used. Further, the arrangement of the heater 782 is not particularly limited as long as the etching liquid in the storage tank 73 can be heated, and may be installed in the vicinity of the outer periphery of the storage tank 73.

  Note that the temperature control unit 78 of the present embodiment is configured to set the etching solution in the storage tank 73 to a predetermined temperature, but if the temperature of the etching solution sent from the delivery port 4a can be maintained at the predetermined temperature, It is not limited to this. For example, the temperature control unit 78 may be provided in the middle of the delivery pipe 71 to control the temperature of the etching solution flowing in the delivery pipe 71, or may be provided in the middle of the recovery pipe 72 to flow in the recovery pipe 72. The temperature of the etching solution may be controlled.

(shutter)
The shutter device 5 mainly (1) removes the etching solution from the workpiece 10 until the flow rate of the etching solution delivered from the delivery port 4a (the amount delivered from the delivery port 4a per unit time) and the temperature both reach a predetermined value. It has a function of not supplying the surface 101 to be processed and (2) a function of stopping (ending or temporarily stopping) the supply of the etching solution from the delivery port 4a to the surface 101 to be processed. By having such a shutter device 5, as will be described later, highly accurate etching processing can be performed on the workpiece 10.

  3A is a plan view showing the shutter device 5, and FIG. 3B is a cross-sectional view taken along line AA in FIG. 3A. As shown in the figure, the shutter device 5 has a support portion 52 fixed to the nozzle 4 and a shutter blade (shutter portion) 51 slidably provided on the support portion 52. The shutter blade 51 and the support portion 52 of the shutter blade 51 are made of a material that is not corroded by the etching solution.

  The support portion 52 is fixed to the nozzle 4 by fitting the nozzle 4 into a hole 521 formed in the bottom portion. Accordingly, the shutter device 5 (shutter blade 51) can be moved along with the movement of the nozzle 4 while maintaining the relative positional relationship with the nozzle 4. Therefore, the shutter device 5 can be brought into a first state or a second state, which will be described later, reliably and quickly.

  Further, a pair of guide grooves 522 extending in the horizontal direction in FIG. 3 is formed in the support portion 52, and the shutter blade 51 can slide along the guide grooves 522. As described above, by moving the shutter blade 51 in the direction of the surface 101 to be processed of the workpiece 10, the distance between the nozzle 4 and the surface 101 to be processed can be reduced. The etched etching solution can be efficiently supplied to the surface 101 to be processed, and the etching solution can be accurately supplied to a desired portion (a minute region) of the surface 101 to be processed.

The shutter blade 51 has a plate shape, and a substantially semicircular cutout along the outer shape of the nozzle 4 is formed at the right edge in FIG. As described above, since the shutter blade 51 has a plate shape, the separation distance between the nozzle 4 and the surface to be processed 101 can be reduced, so that the etching solution sent from the nozzle 4 can be efficiently transferred to the surface to be processed 101. In addition, the etching solution can be accurately supplied to a desired portion (small region) of the surface 101 to be processed.
In such a shutter device 5, as shown in FIG. 4A, the shutter blade 51 is located between the nozzle 4 and the workpiece 10 (the workpiece 10 fixed to the chucking plate 21, the same applies hereinafter). This state (blocking state) and the second state (supply state) in which the shutter blade 51 is retracted from between the nozzle 4 and the workpiece 10 as shown in FIG.

  As shown in FIG. 4A, in the first state, since the shutter blade 51 is located between the nozzle 4 and the workpiece 10, the etching sent from the delivery port 4a toward the processing surface 101 is performed. The liquid is blocked by the shutter blade 51. Therefore, the etching solution sent from the delivery port 4a adheres to the lower surface of the shutter blade 51, and is then quickly sucked from the suction port 4b. As described above, in the first state, it is possible to prevent the etching solution sent from the delivery port 4a from being supplied to the processing target surface 101. In addition, as shown to Fig.4 (a), it is preferable to be in a 1st state in the position which the shutter blade 51 moved to the rightmost side. Thereby, the shutter apparatus 5 can be more reliably set to the first state.

  On the other hand, as shown in FIG. 4B, in the second state, the shutter blade 51 is retracted from between the nozzle 4 and the workpiece 10. Therefore, the etching solution sent from the delivery port 4a is supplied to the surface to be processed 101, is used for etching the surface to be processed 101, and then sucked from the suction port 4b. As described above, in the second state, the etching solution sent from the delivery port 4a is supplied to the processing target surface 101. As shown in FIG. 4B, it is preferable that the shutter blade 51 is in the second state at the position where it is moved to the rightmost side. Thereby, the shutter apparatus 5 can be more reliably set to the second state.

By having the shutter device 5 having such a configuration, the following effects can be exhibited.
-1st effect As mentioned above, the etching rate with respect to the workpiece | work 10 of an etching liquid changes with the temperature of an etching liquid (generally, an etching rate becomes high as the temperature of an etching liquid rises). Therefore, in order to perform a highly accurate etching process on the workpiece 10, the etching rate is kept constant by keeping the temperature of the etching solution delivered from the delivery port 4a constant from the beginning to the end of etching. Is important.

  In view of this, the surface processing apparatus 1 is provided with a temperature control unit 78 that maintains the temperature of the etching solution in the storage tank 73 at a predetermined temperature. I need time. Further, it takes more time to circulate the etching solution in the storage tank 73 at a predetermined temperature in the circulation path 79 so that the etching solution in the circulation path 79 has a predetermined temperature without unevenness. Hereinafter, for convenience of explanation, the period from the start of the circulation of the etching solution in the circulation path 79 until the etching solution in the circulation path 79 is maintained at a predetermined temperature without unevenness is also referred to as “preparation period T1”. .

  Thus, a certain amount of time (usually about 20 to 30 seconds) is required as the preparation period T1, and the etching liquid delivered from the delivery port 4a of the nozzle 4 during this preparation period T1 varies in temperature depending on the time. Or temperature variations occur at each part even at the same time. For this reason, during the preparation period T1, the etching rate of the etching liquid with respect to the workpiece 10 deviates from a predetermined value, and when the etching process of the workpiece 10 is started during this preparation period T1 (that is, on the surface 101 to be processed). If the etching solution is supplied), a desired etching process cannot be performed on the workpiece 10.

  Therefore, in the surface processing apparatus 1, the shutter device 5 that can be positioned between the nozzle 4 and the workpiece 10 is provided, and during the preparation period T1, the shutter apparatus 5 is set to the first state, whereby the preparation period T1. The etching liquid is prevented from being supplied to the surface 101 to be processed. Then, after the preparation period T1 ends, the shutter device 5 is changed from the first state to the second state, and the etching process for the workpiece 10 is started. Thereby, since the etching liquid maintained at a predetermined etching rate can be supplied to the entire surface 101 to be processed, the workpiece 10 can be subjected to highly accurate etching processing.

Second Effect The etching rate of the etching solution with respect to the workpiece 10 is not limited to the temperature of the etching solution described in the first effect, but the flow rate of the etching solution sent out from the sending / receiving port 4a Depending on the amount). In general, the etching rate increases as the flow rate of the etching solution increases. Therefore, in order to perform a highly accurate etching process on the workpiece 10, it is important to keep the flow rate of the etching solution delivered from the delivery port 4a constant from the beginning to the end of the etching and keep the etching rate constant. It becomes.

  In view of this, the surface processing apparatus 1 is provided with a flow rate adjusting valve 75 and a flow meter 76 for adjusting the flow rate of the etching solution delivered from the delivery port 4a, but the etching solution delivered from the delivery port 4a has a predetermined flow rate. However, a certain amount of time (for example, about 1 to 10 seconds) is required. This is because, for example, it is difficult to instantaneously circulate the etching solution that has stopped circulating in the circulation path 79 at a predetermined flow rate. In the following description, for convenience of explanation, the period from the start of the circulation of the etching solution in the circulation path 79 until the flow rate of the etching solution delivered from the delivery port 4a is maintained at a predetermined value is referred to as “preparation period T2”. Also say.

  Thus, a certain amount of time is required as the preparation period T2, and the flow rate of the etching solution delivered from the delivery port 4a of the nozzle 4 during the preparation period T2 varies depending on the time. For this reason, during the preparation period T2, the etching rate of the etching liquid with respect to the work 10 is deviated from a predetermined value, and when the etching process of the work 10 is started during this preparation period T2 (that is, the surface 101 to be processed). If the etching solution is supplied), a desired etching process cannot be performed on the workpiece 10.

  Therefore, in the surface processing apparatus 1, the shutter device 5 that can be positioned between the nozzle 4 and the workpiece 10 is provided, and during the preparation period T2, the shutter apparatus 5 is set to the first state, thereby preparing the preparation period T2. The etching liquid is prevented from being supplied to the surface 101 to be processed. Then, after the preparation period T2 ends, the shutter device 5 is changed from the first state to the second state, the etching solution is supplied to the processing target surface 101, and the etching process for the workpiece 10 is started. As a result, the entire surface 101 to be processed can be processed at a predetermined etching rate, so that the workpiece 10 can be etched with high accuracy.

Third Effect In the surface processing apparatus 1 according to the present embodiment, the nozzle 4 (the delivery port 4a) is set small with respect to the surface to be processed 101. Is moved with respect to the surface 101 to be processed, an etching solution is supplied to the entire surface 101 to be processed, and the workpiece 10 is etched. Here, the movement route of the nozzle 4 with respect to the processing surface 101 is not particularly limited. For example, as shown in FIG. 5, the route R moves in the vertical direction in FIG. 5 while reciprocating in the horizontal direction in FIG. Can be used. By adopting such a route R, the etching solution can be efficiently supplied to the entire surface 101 to be processed.

  As shown in FIG. 5, the nozzle 4 straddles the contour (edge) of the surface to be processed 101 from the inside to the outside of the surface to be processed 101 at a point R1 located in the middle of the route R, and at a point R2. It moves so as to straddle the outline (edge) of the surface to be processed 101 from the outside to the inside of the surface to be processed 101. Here, when the nozzle 4 passes through the points R <b> 1 and R <b> 2 while continuing to supply the etching liquid to the processing target surface 101, the etching liquid is supplied to the side surface of the workpiece 10 in addition to the processing target surface 101. Then, the etching solution supplied to the side surface of the workpiece 10 penetrates between the workpiece 10 and the chucking plate 21 by a capillary phenomenon, whereby the upper surface of the workpiece 10 (the surface opposite to the surface 101 to be processed) is formed. It will be etched unintentionally. As described above, when the nozzle 4 passes through the points R1 and R2 while the supply of the etching liquid to the processing surface 101 is continued, a desired etching process cannot be performed on the workpiece 10.

  In order to solve such a problem, for example, the supply of the etching solution from the nozzle 4 may be temporarily stopped until the nozzle 4 passes through the nearest point R2 from the point R1 on the route R. However, when the supply of the etching solution from the nozzle 4 is restarted when the point R2 is exceeded, as described above, the surface 101 to be processed is in a state where the flow rate of the etching solution sent from the nozzle 4 is not maintained at a predetermined value. Since the etching solution is supplied to the surface, a part of the surface 101 to be processed is etched at an etching rate different from the predetermined value. As described above, the desired etching process cannot be performed on the workpiece 10 even by the method of temporarily stopping the sending of the etching solution from the nozzle 4 until the point R2 passes through the point R2.

  Therefore, in the surface processing apparatus 1, when the shutter device 5 is provided and the nozzle 4 passes through the points R1 and R2, the etching solution is preferably removed from the nozzle 4 while the nozzle 4 is moving from the point R1 to the nearest point R2. The shutter device 5 is configured to be in the first state while maintaining the state in which is sent at a predetermined temperature and a predetermined flow rate. As a result, the two problems described above, that is, the problem that the upper surface of the workpiece 10 is etched unintentionally and the problem that a part of the surface to be processed 101 is etched at an etching rate different from the predetermined value are solved at the same time. can do. That is, according to the surface processing apparatus 1, a highly accurate etching process can be performed on the workpiece 10.

Fourth Effect As described above, in the surface processing apparatus 1, the nozzle 4 is moved along the route R so that the etching solution can be supplied to the entire surface 101 to be processed. However, depending on the thickness of the workpiece 10 and the surface shape of the surface to be processed 101, there may be a region (hereinafter referred to as “non-etched region”) that does not require an etching process in the surface 101 to be processed. Therefore, when the nozzle 4 passes directly under such a non-etching region, it is necessary to temporarily stop the supply of the etching liquid to the surface 101 to be processed. However, when the delivery of the etching solution from the nozzle 4 is stopped, as described above, the flow rate of the etching solution delivered from the nozzle 4 is predetermined within a predetermined time after restarting the delivery of the etching solution from the nozzle 4. Since the etching solution is supplied to the surface to be processed 101 in a state where the value is not maintained, a part of the surface to be processed 101 is etched at an etching rate different from the predetermined value.

  Therefore, in the surface processing apparatus 1, the shutter device 5 is provided, and when the nozzle 4 passes directly below the non-etching region, the shutter device is maintained while the etching solution is sent from the nozzle 4 at a predetermined temperature and a predetermined flow rate. 5 is changed from the second state to the first state. Thereby, the problem as described above, that is, the problem that a part of the surface to be processed 101 is etched at an etching rate different from the predetermined value can be solved. That is, according to the surface processing apparatus 1, a highly accurate etching process can be performed on the workpiece 10.

Fifth Effect When the supply of the etching liquid to the entire surface 101 to be processed is finished and the supply of the etching liquid from the nozzle 4 is finished, for example, the liquid feed pump 74 is stopped or the flow rate adjustment valve 75 is turned on. You can close it or do both. Hereinafter, for convenience of explanation, the case where the liquid feed pump 74 is stopped will be described as a representative.

  However, since the etching solution circulates (flows) in the circulation path 79 until just before the liquid feeding pump 74 is stopped, even if the liquid feeding pump 74 is stopped, the sending of the etching solution from the nozzle 4 is stopped at the same time. Instead, the etchant is sent out from the nozzle 4 for a while after the liquid feed pump 74 is stopped. As described above, when a time difference occurs between the time when the liquid feed pump 74 is stopped and the time when the supply of the etching liquid from the nozzle 4 is stopped, the portion of the processing surface 101 facing the nozzle 4 at this time The time during which the etching solution is supplied becomes longer than the predetermined time, and the etching depth becomes deeper than the predetermined value. In the method of stopping the sending of the etching liquid from the nozzle 4 by stopping the liquid feeding pump 74, the work 10 cannot be etched with high accuracy.

  Therefore, in the surface processing apparatus 1, when the shutter device 5 is provided and the etching liquid from the nozzle 4 is terminated, the shutter device 5 is first changed from the second state to the first state, and the surface to be processed 101 is processed. The supply of the etching solution to is cut off. Thereafter, the liquid feed pump 74 is stopped, and the supply of the etching liquid from the nozzle 4 is stopped. According to such a configuration, the problem as described above, that is, the problem that the etching solution is supplied to the predetermined part of the processing surface 101 for a longer time than the predetermined time is solved, and the workpiece 10 is etched with high accuracy. Processing can be performed. Although the order of stopping the liquid feeding pump 74 after the shutter device 5 is set to the first state has been described, for example, even when the liquid feeding pump 74 is stopped at the same time as the shutter device 5 is set to the first state. Good.

(Control part)
As shown in FIG. 6, the control unit 6 includes a nozzle moving device 61 that moves the nozzle 4 together with the shutter device 5 in a plane (on the processing target surface 101), and the surface of the workpiece 10 before and after processing. A storage unit 62 that stores the profile of the nozzle, a calculation unit 63 that calculates the moving speed of the nozzle 4 from these two profiles and the etching amount (etching depth) of the etching solution per unit time, and a nozzle based on the calculation result 4 and the movement control unit 64 for controlling the nozzle moving device 61 so as to keep the separation distance between the nozzle 4 and the workpiece 10 constant, and the shutter device 5 in the first state based on the calculation result of the calculation unit 63 And a shutter control unit 65 in either one of the second states.
The surface processing apparatus 1 has been described above.

Next, the operation of the surface processing apparatus 1 will be described.
[Test process]
First, before using the surface processing apparatus 1, as a preliminary experiment, using a sample (test piece) made of the same material as the workpiece 10, etching maintained at a predetermined temperature and a predetermined flow rate from the nozzle 4 (feed port 4a). The liquid is delivered to the sample surface, and the etching amount (etching depth) per unit time in that case is obtained experimentally. The etching depth is measured while moving the nozzle 4 at a constant speed. By performing this measurement at a plurality of speeds, the relationship between the moving speed of the nozzle 4 and the etching depth can be obtained. If the processing depth to be etched at each point on the processing target surface 101 of the workpiece 10 is determined, the moving speed of the nozzle 4 can be determined from the relationship between the moving speed of the nozzle 4 and the processing depth obtained here.

[Process for measuring shape of workpiece 10 before etching]
Next, the profile before processing of the processing target surface 101 of the workpiece 10 is measured. This measurement can be performed using an existing surface shape measuring device or surface roughness measuring device. The obtained measurement result is stored in the storage unit 62 of the control unit 6. Next, the calculation unit 63 determines the workpiece 10 to be processed based on the difference between the profile of the workpiece surface 101 of the workpiece 10 before machining and the target workpiece 10 after machining, which is stored in the storage unit 62. An etching depth to be processed at each position on the processing surface 101 is calculated. The calculation unit 63 further calculates the moving speed of the nozzle 4 at each position on the processing target surface 101 from the relationship between the moving speed of the nozzle 4 and the etching depth. Further, the calculation unit 63 determines that the nozzle 4 is located at a point R1 on the route R from the plane view shape of the processing target surface 101 stored in the storage unit 62, the movement route (the route R described above), and the movement speed of the nozzle 4. The time (timing) for passing through R2 is calculated.

[Etching process]
First, the nozzle 4 is positioned at the etching start point Rs of the route R by the nozzle moving device 61 controlled by the movement control unit 64, and the shutter device 5 is set to the first state by the shutter control unit 65.
Next, by operating the liquid feed pump 74 and adjusting the flow rate adjustment valve 75, the etchant is sent from the storage tank 73 through the nozzle 4, and the temperature controller 78 is driven to heat the etchant. In this state, the etching solution delivered from the nozzle 4 is maintained at a predetermined flow rate and waits until the etching solution is maintained at a predetermined temperature (that is, until both of the preparation periods T1 and T2 described above are completed).

Next, the shutter controller 65 changes the shutter device 5 from the first state to the second state, and at the same time, the nozzle moving device 61 moves the nozzle 4 at the speed determined as described above to the surface 101 of the workpiece 10. Move along the route R so as to pass through the entire area. At the same time, the suction pump 77 is operated to suck the etching solution from the surface 101 of the workpiece 10 into the storage tank 73. The shutter control unit 65 changes the shutter device 5 from the second state to the first state from the time when the nozzle 4 passes the point R1 on the route R to the time when the nozzle 4 passes the nearest point R2. Even when the etching end point Re is reached, the shutter device 5 is changed from the second state to the first state.
Thereby, at each point of the processing target surface 101 of the workpiece 10, the above-described calculated depth to be processed is etched, and a desired profile is obtained.

Second Embodiment
Next, a second embodiment of the processing apparatus (surface processing apparatus) of the present invention will be described.
FIG. 7 is a plan view of a nozzle provided in the surface processing apparatus according to the second embodiment of the present invention, and FIG. 8 is a plan view showing a modification of the nozzle shown in FIG.
Hereinafter, the surface processing apparatus according to the second embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted.
The processing apparatus (surface processing apparatus) according to the second embodiment of the present invention is the same as the surface processing apparatus 1 of the first embodiment described above except that the configuration of the nozzle 4A is different. 7 and 8, the same reference numerals are given to the same configurations as those in the first embodiment described above.

As shown in FIG. 7A, the nozzle 4A of the present embodiment includes a plurality of outlets 4a provided side by side in one direction and a plurality of suction ports 4b provided so as to surround each of the outlets 4a. And have. In such a nozzle 4A, an etching solution is sent from each delivery port 4a, and the etching solution is sucked from the suction port 4b.
As shown in FIG. 7B, such a nozzle 4A has a direction orthogonal to the arrangement direction of the outlets 4a under the control of the control unit 6 in a plan view of the processing surface 101 (in FIG. 7B). Move in the direction of the arrow. Thereby, the etching solution can be supplied to the entire surface 101 to be processed in a shorter time.

In the configuration shown in FIG. 7, one suction port 4b is formed for each delivery port 4a, but the configuration of the nozzle 4A is not limited to this. For example, as the nozzle 4A, as shown in FIG. 8A, a plurality of outlets 4a formed side by side in one direction and one suction port formed so as to cover the periphery of all the outlets 4a 4b may be formed, or, as shown in FIG. 8B, a long hole-like delivery port 4a extending in one direction and the delivery port 4a are formed to be covered. The structure in which the suction port 4b was formed may be sufficient.
According to the second embodiment as described above, the same effect as that of the first embodiment can be exhibited.

<Third Embodiment>
Next, a third embodiment of the processing apparatus (surface processing apparatus) of the present invention will be described.
FIG. 9 is a plan view of a shutter provided in the surface processing apparatus according to the third embodiment of the present invention.
Hereinafter, the surface processing apparatus of the third embodiment will be described with a focus on differences from the above-described embodiments, and description of similar matters will be omitted.
The processing apparatus (surface processing apparatus) according to the third embodiment of the present invention is the same as the surface processing apparatus 1 of the first embodiment described above except that the configuration of the shutter device 5B is different. In FIG. 9, the same components as those in the first embodiment described above are denoted by the same reference numerals.

As shown in FIGS. 9A and 9B, the shutter device 5B of the present embodiment is provided with a support portion 52B fixed to the nozzle 4 and a support portion 52B that is rotatable about a shaft 53B. And a shutter blade 51B. In such a shutter device 5B, as shown in FIG. 9A, the shutter blade 51B is positioned between the nozzle 4 and a work (not shown), and the shutter blade 51B is connected to the nozzle 4. The second state of retreating from the workpiece can be taken.
According to the third embodiment as described above, the same effect as that of the first embodiment can be exhibited.

As mentioned above, although the processing apparatus and liquid delivery / suction apparatus of this invention were demonstrated based on embodiment of illustration, this invention is not limited to these, The structure of each part is arbitrary structures which have the same function Can be substituted. Moreover, other arbitrary structures and processes may be added. Moreover, you may combine each embodiment mentioned above suitably.
In addition, the configuration of the first embodiment and the configuration of the third embodiment have been described as the shutters included in the processing device and the liquid delivery / suction device of the present invention. The configuration of the shutter includes the first state and the first configuration described above. If it can take the state of 2, it will not specifically limit, For example, you may have several shutter blades.

DESCRIPTION OF SYMBOLS 1 ... Surface processing apparatus 10 ... Workpiece 101 ... Surface to be processed 2 ... Supporting device 21 ... Chucking plate 211 ... Chucking surface 22 ... Fixing means 221 ... Intake hole 222 ... Suction pump 3 ... ... Etching solution supply device 4, 4A ... Nozzle 4a ... Outlet 4b ... Suction port 41 ... Outer pipe 42 ... Inner pipe 43 ... Clearance 5, 5B ... Shutter device 51, 51B ... Shutter blade 52 , 52B …… Supporting portion 521 …… Hole 522 …… Guide groove 53B …… Shaft 6 …… Control portion 61 …… Nozzle moving device 62 …… Storage portion 63 …… Calculation portion 64 …… Movement control portion 65 …… Shutter Control unit 7 …… Etching liquid circulation device 71 …… Sending pipe 72 …… Recovery pipe 73 …… Storage tank 74 …… Feeding pump 75 …… Flow control valve 76 …… Flow meter 77 …… Suction Amplifier 78 ...... temperature controller 781 ...... temperature detection element 782 ...... heater 783 ...... driving control unit 79 ...... circulation path R1, R2 ...... point Rs ...... etching start point

Claims (13)

A processing apparatus for processing into a desired shape by supplying an etching solution to an object to be processed,
A support base for supporting the object to be processed;
A nozzle having a delivery port for delivering the etching solution to the object to be processed and a suction port for sucking the etching solution delivered from the delivery port;
A shutter device having a shutter unit,
The support base and the nozzle move relative to each other;
In the shutter device, the shutter unit is disposed between the object to be processed and the delivery port, and a shut-off state in which the supply of the etching liquid from the delivery port to the object to be processed is blocked, and the shutter unit includes Retreat from between the object to be processed and the delivery port, and can select a supply state for supplying the etching solution from the delivery port to the object to be processed,
The shutter portion is in the shut-off state until the flow rate per unit time of the etching solution delivered from the delivery port reaches a predetermined value after delivery of the etching solution from the delivery port is started. A processing device characterized by   The shutter unit is in the shut-off state until the temperature of the etching solution delivered from the delivery port reaches a predetermined value after delivery of the etching solution from the delivery port is started. The processing apparatus as described. A processing apparatus for processing into a desired shape by supplying an etching solution to an object to be processed,
A support base for supporting the object to be processed;
A nozzle having a delivery port for delivering the etching solution to the object to be processed and a suction port for sucking the etching solution delivered from the delivery port;
A shutter device having a shutter unit,
The support base and the nozzle move relative to each other;
In the shutter device, the shutter unit is disposed between the object to be processed and the delivery port, and a shut-off state in which the supply of the etching liquid from the delivery port to the object to be processed is blocked, and the shutter unit includes Retreat from between the object to be processed and the delivery port, and can select a supply state for supplying the etching solution from the delivery port to the object to be processed,
The shutter unit is in the shut-off state until the temperature of the etching solution delivered from the delivery port reaches a predetermined value after delivery of the etching solution from the delivery port is started. Processing equipment.   The shutter unit is in the shut-off state until the flow rate per unit time of the etching solution delivered from the delivery port reaches a predetermined value after delivery of the etching solution from the delivery port is started. Item 4. The processing apparatus according to Item 3. The processing apparatus according to any one of claims 1 to 4 , wherein the shutter portion is provided between the nozzle and an edge of the workpiece. The processing apparatus according to claim 5 , wherein the supply of the etching liquid to the object to be processed is blocked by setting the shutter portion in the blocking state in a state where the etching liquid is being delivered from the delivery port. The processing apparatus according to any one of claims 1 to 6 , wherein the shutter unit changes from the supply state to the shut-off state while the nozzle and the object to be processed face each other. Wherein when terminating the supply of the etchant to the object to be processed, the shutter after said cut-off state from the supply state, to claim 7 stops sending of the etchant from the outlet The processing apparatus as described. The processing apparatus according to any one of claims 1 to 8 , wherein when the supply of the etching solution to the object to be processed is temporarily stopped, the shutter unit is changed from the supply state to the cutoff state. When the supply of the etching solution to the object to be processed is temporarily stopped, the shutter unit is set to the cut-off state from the supply while maintaining the state in which the etching solution is sent from the delivery port. The processing apparatus according to claim 9 . The shutter unit, the processing apparatus according to any one of claims 1 to 10 for moving the nozzle and integrally. A liquid delivery and suction device for delivering and sucking liquid,
A support base;
A nozzle having a delivery port for delivering the liquid to the support and a suction port for sucking the liquid delivered from the delivery port;
A shutter device having a shutter unit,
The support base and the nozzle move relative to each other;
In the shutter device, the shutter unit is disposed between the support base and the delivery port, and a blocking state in which the supply of the liquid from the delivery port to the support table is blocked, and the shutter unit is the support table And the supply state of retreating from between the outlet and supplying the liquid from the outlet to the support base can be selected,
The shutter portion is in the shut-off state until the flow rate per unit time of the etching solution delivered from the delivery port reaches a predetermined value after delivery of the etching solution from the delivery port is started. A liquid delivery and suction device characterized by the above. A liquid delivery and suction device for delivering and sucking liquid,
A support base;
A nozzle having a delivery port for delivering the liquid to the support and a suction port for sucking the liquid delivered from the delivery port;
A shutter device having a shutter unit,
The support base and the nozzle move relative to each other;
In the shutter device, the shutter unit is disposed between the support base and the delivery port, and a blocking state in which the supply of the liquid from the delivery port to the support table is blocked, and the shutter unit is the support table And the supply state of retreating from between the outlet and supplying the liquid from the outlet to the support base can be selected,
The shutter unit is in the shut-off state until the temperature of the etching solution delivered from the delivery port reaches a predetermined value after delivery of the etching solution from the delivery port is started. Liquid delivery suction device.

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