JP5701602B2 - ウエハーを検査するように構成される装置 - Google Patents

ウエハーを検査するように構成される装置 Download PDF

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Publication number
JP5701602B2
JP5701602B2 JP2010519994A JP2010519994A JP5701602B2 JP 5701602 B2 JP5701602 B2 JP 5701602B2 JP 2010519994 A JP2010519994 A JP 2010519994A JP 2010519994 A JP2010519994 A JP 2010519994A JP 5701602 B2 JP5701602 B2 JP 5701602B2
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wafer
light
different points
optical element
subsystem
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Japanese (ja)
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JP2010536034A5 (enExample
JP2010536034A (ja
Inventor
カドクリー・アズミ
ビエラク・スティーブン
バエズ−イラバニ・メヘディ
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2010519994A 2007-08-10 2008-08-11 ウエハーを検査するように構成される装置 Active JP5701602B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/837,220 2007-08-10
US11/837,220 US7746459B2 (en) 2007-08-10 2007-08-10 Systems configured to inspect a wafer
PCT/US2008/009571 WO2009023154A2 (en) 2007-08-10 2008-08-11 Systems configured to inspect a wafer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014222431A Division JP6014102B2 (ja) 2007-08-10 2014-10-31 ウエハーを検査するように構成される装置

Publications (3)

Publication Number Publication Date
JP2010536034A JP2010536034A (ja) 2010-11-25
JP2010536034A5 JP2010536034A5 (enExample) 2014-05-08
JP5701602B2 true JP5701602B2 (ja) 2015-04-15

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ID=40346192

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JP2010519994A Active JP5701602B2 (ja) 2007-08-10 2008-08-11 ウエハーを検査するように構成される装置
JP2014222431A Active JP6014102B2 (ja) 2007-08-10 2014-10-31 ウエハーを検査するように構成される装置

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JP2014222431A Active JP6014102B2 (ja) 2007-08-10 2014-10-31 ウエハーを検査するように構成される装置

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US (1) US7746459B2 (enExample)
JP (2) JP5701602B2 (enExample)
WO (1) WO2009023154A2 (enExample)

Families Citing this family (10)

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US8441639B2 (en) * 2009-09-03 2013-05-14 Kla-Tencor Corp. Metrology systems and methods
KR101908749B1 (ko) 2010-12-16 2018-10-16 케이엘에이-텐코 코포레이션 웨이퍼 검사
US9279774B2 (en) * 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US9404873B2 (en) * 2012-03-09 2016-08-02 Kla-Tencor Corp. Wafer inspection with multi-spot illumination and multiple channels
US9945792B2 (en) * 2012-12-19 2018-04-17 Kla-Tencor Corporation Generating an array of spots on inclined surfaces
US9448343B2 (en) * 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
EP3470924A1 (en) * 2017-10-11 2019-04-17 ASML Netherlands B.V. Method of optimizing the position and/or size of a measurement illumination spot relative to a target on a substrate, and associated apparatus
US11513085B2 (en) * 2020-02-20 2022-11-29 Kla Corporation Measurement and control of wafer tilt for x-ray based metrology
WO2022009297A1 (ja) * 2020-07-07 2022-01-13 株式会社日立ハイテク 荷電粒子線装置
CN114199884B (zh) * 2021-12-09 2023-06-13 合肥御微半导体技术有限公司 一种晶圆背检设备及其检测方法

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US6999183B2 (en) * 1998-11-18 2006-02-14 Kla-Tencor Corporation Detection system for nanometer scale topographic measurements of reflective surfaces
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US6590645B1 (en) * 2000-05-04 2003-07-08 Kla-Tencor Corporation System and methods for classifying anomalies of sample surfaces
US6879390B1 (en) * 2000-08-10 2005-04-12 Kla-Tencor Technologies Corporation Multiple beam inspection apparatus and method
US6538730B2 (en) * 2001-04-06 2003-03-25 Kla-Tencor Technologies Corporation Defect detection system
JP3446754B2 (ja) * 2001-12-11 2003-09-16 三菱電機株式会社 微小異物検出方法及びその検出装置
US7130039B2 (en) * 2002-04-18 2006-10-31 Kla-Tencor Technologies Corporation Simultaneous multi-spot inspection and imaging
US7116413B2 (en) * 2002-09-13 2006-10-03 Kla-Tencor Corporation Inspection system for integrated applications
US7061598B1 (en) * 2002-09-27 2006-06-13 Kla-Tencor Technologies Corporation Darkfield inspection system having photodetector array
US7106432B1 (en) * 2002-09-27 2006-09-12 Kla-Tencor Technologies Corporation Surface inspection system and method for using photo detector array to detect defects in inspection surface
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US7068363B2 (en) * 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
US7271921B2 (en) * 2003-07-23 2007-09-18 Kla-Tencor Technologies Corporation Method and apparatus for determining surface layer thickness using continuous multi-wavelength surface scanning
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US7130036B1 (en) * 2003-09-16 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for inspection of an entire wafer surface using multiple detection channels
US7304310B1 (en) * 2003-11-21 2007-12-04 Kla-Tencor Technologies Corp. Methods and systems for inspecting a specimen using light scattered in different wavelength ranges
US7184138B1 (en) * 2004-03-11 2007-02-27 Kla Tencor Technologies Corporation Spatial filter for sample inspection system
US7206066B2 (en) * 2004-03-19 2007-04-17 Kla-Tencor Technologies Corporation Reflectance surface analyzer
JP2005283190A (ja) * 2004-03-29 2005-10-13 Hitachi High-Technologies Corp 異物検査方法及びその装置
US7471382B2 (en) * 2004-10-04 2008-12-30 Kla-Tencor Technologies Corporation Surface inspection system with improved capabilities
US7489393B2 (en) * 2005-03-02 2009-02-10 Kla-Tencor Technologies Corporation Enhanced simultaneous multi-spot inspection and imaging
US7728965B2 (en) * 2005-06-06 2010-06-01 Kla-Tencor Technologies Corp. Systems and methods for inspecting an edge of a specimen
US7511816B2 (en) * 2005-06-16 2009-03-31 Kla-Tencor Technologies Corp. Methods and systems for determining drift in a position of a light beam with respect to a chuck
US7518728B2 (en) * 2005-09-30 2009-04-14 Intel Corporation Method and instrument for collecting fourier transform (FT) Raman spectra for imaging applications
US7554656B2 (en) * 2005-10-06 2009-06-30 Kla-Tencor Technologies Corp. Methods and systems for inspection of a wafer
US7372559B2 (en) * 2005-12-14 2008-05-13 Kla-Tencor Technologies Corp. Systems and methods for inspecting a wafer with increased sensitivity
US7436505B2 (en) * 2006-04-04 2008-10-14 Kla-Tencor Technologies Corp. Computer-implemented methods and systems for determining a configuration for a light scattering inspection system
US7463349B1 (en) * 2006-06-02 2008-12-09 Kla-Tencor Technologies Corp. Systems and methods for determining a characteristic of a specimen

Also Published As

Publication number Publication date
WO2009023154A3 (en) 2009-04-23
WO2009023154A2 (en) 2009-02-19
US20090040525A1 (en) 2009-02-12
US7746459B2 (en) 2010-06-29
JP6014102B2 (ja) 2016-10-25
JP2015062022A (ja) 2015-04-02
JP2010536034A (ja) 2010-11-25

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