JP5688733B2 - 誘電体化合物の製造方法 - Google Patents
誘電体化合物の製造方法 Download PDFInfo
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/762—Cubic symmetry, e.g. beta-SiC
- C04B2235/763—Spinel structure AB2O4
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
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- Crystallography & Structural Chemistry (AREA)
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- Inorganic Compounds Of Heavy Metals (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Compounds Of Iron (AREA)
- Inorganic Insulating Materials (AREA)
Description
S102 共沈工程(液相合成工程)
S103 洗浄工程
S104 焼成工程
S105 評価工程
Claims (5)
- 組成が(RMbO3−δ)n(MaO)m(Rは、In,Sc,Y,Dy,Ho,Er,Tm,Yb,Lu,Ti,Ca,Sr,Ce,Sn,Hfから選ばれる少なくとも1種類の元素、Ma,Mbは、Ti,Mn,Fe,Co,Cu,Ga,Zn,Al,Mg,Cdから重複を許して選ばれる少なくとも1種類の元素、nは1以上の整数、mは0以上の整数、δは0以上0.2以下の実数)で表され、層状三角格子構造を有する誘電体化合物の製造方法であって、
誘電体化合物(RMbO3−δ)n(MaO)mの原料となるRを含む化合物、Maを含む化合物、及びMbを含む化合物を混合して、R、Ma、Mbの各元素を含む原料溶液を準備する準備工程と、
前記原料溶液から液相法で前記誘電体化合物の前駆体固体を得る液相合成工程と、
前記液相合成工程で得られた前記前駆体固体を所定の焼成温度で加熱することで、前記誘電体化合物の粉末を得る焼成工程と
を備えることを特徴とする誘電体化合物の製造方法。 - 前記焼成工程で得られた粉末の前記誘電体化合物の粒径を1〜100nmとしていることを特徴とする請求項1に記載の誘電体化合物の製造方法。
- 前記焼成工程では、酸素分圧を10−12〜1Paとした700℃以上の炉内で、前記前駆体固体を1分以上加熱していることを特徴とする請求項1または請求項2に記載の誘電体化合物の製造方法。
- 前記焼成工程で700℃以上に加熱した状態から、30分以内で200℃以下にまで冷却していることを特徴とする請求項3に記載の誘電体化合物の製造方法。
- 前記Ma及び前記MbはFeであって、前記原料溶液中のFe2+のFe3+に対する存在比率を0.5〜1.5としていることを特徴とする請求項1〜4のいずれか一項に記載の誘電体化合物の製造方法。
Priority Applications (1)
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JP2010541352A JP5688733B2 (ja) | 2008-12-03 | 2009-12-03 | 誘電体化合物の製造方法 |
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JP2008308780 | 2008-12-03 | ||
JP2008308780 | 2008-12-03 | ||
JP2010541352A JP5688733B2 (ja) | 2008-12-03 | 2009-12-03 | 誘電体化合物の製造方法 |
PCT/JP2009/070323 WO2010064686A1 (ja) | 2008-12-03 | 2009-12-03 | 誘電体化合物及びその製造方法 |
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JPWO2010064686A1 JPWO2010064686A1 (ja) | 2012-05-10 |
JP5688733B2 true JP5688733B2 (ja) | 2015-03-25 |
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JP2010541352A Expired - Fee Related JP5688733B2 (ja) | 2008-12-03 | 2009-12-03 | 誘電体化合物の製造方法 |
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WO (1) | WO2010064686A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114988861B (zh) * | 2022-06-09 | 2023-04-07 | 江西理工大学 | 六角稀土铁氧化物单相多铁性材料及其制备方法和应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52101499A (en) * | 1976-02-21 | 1977-08-25 | Kagaku Gijutsucho Mukizai | Singleecrystal magnetic semiconductor of yttrium diferrous tetraoxigen compoun *yfe204* and method of manufacture thereof |
JP2002352626A (ja) * | 2001-05-25 | 2002-12-06 | Central Res Inst Of Electric Power Ind | 誘電体材料とその製造方法及び当該誘電体材料を利用したコンデンサー並びに電力貯蔵システム |
JP2007223886A (ja) * | 2005-11-22 | 2007-09-06 | Japan Synchrotron Radiation Research Inst | 物質中の電子密度を双極子状に分布させることで誘電体特性を実現する方法および材料 |
-
2009
- 2009-12-03 JP JP2010541352A patent/JP5688733B2/ja not_active Expired - Fee Related
- 2009-12-03 WO PCT/JP2009/070323 patent/WO2010064686A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52101499A (en) * | 1976-02-21 | 1977-08-25 | Kagaku Gijutsucho Mukizai | Singleecrystal magnetic semiconductor of yttrium diferrous tetraoxigen compoun *yfe204* and method of manufacture thereof |
JP2002352626A (ja) * | 2001-05-25 | 2002-12-06 | Central Res Inst Of Electric Power Ind | 誘電体材料とその製造方法及び当該誘電体材料を利用したコンデンサー並びに電力貯蔵システム |
JP2007223886A (ja) * | 2005-11-22 | 2007-09-06 | Japan Synchrotron Radiation Research Inst | 物質中の電子密度を双極子状に分布させることで誘電体特性を実現する方法および材料 |
Non-Patent Citations (1)
Title |
---|
JPN6014019619; S.Katano et al.: 'Crystal and magnetic structure of stoichiometricYFe2O4' Physica B Vol.213 & 214, 1995, p218-220 * |
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JPWO2010064686A1 (ja) | 2012-05-10 |
WO2010064686A1 (ja) | 2010-06-10 |
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