JP5683856B2 - Radiation detector - Google Patents

Radiation detector Download PDF

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JP5683856B2
JP5683856B2 JP2010160582A JP2010160582A JP5683856B2 JP 5683856 B2 JP5683856 B2 JP 5683856B2 JP 2010160582 A JP2010160582 A JP 2010160582A JP 2010160582 A JP2010160582 A JP 2010160582A JP 5683856 B2 JP5683856 B2 JP 5683856B2
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radiation
substrate
radiation detector
semiconductor elements
semiconductor element
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JP2012021906A (en
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主鉉 柳
主鉉 柳
山田　直之
直之 山田
井上　愼一
愼一 井上
昭浩 蛭田
昭浩 蛭田
千尋 大久保
千尋 大久保
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Hitachi Ltd
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Hitachi Aloka Medical Ltd
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Priority to PCT/JP2011/066196 priority patent/WO2012008568A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/243—Modular detectors, e.g. arrays formed from self contained units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

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  • Condensed Matter Physics & Semiconductors (AREA)
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Description

本発明は、放射線検出装置に関する。特に、本発明は、γ線、Ｘ線等の放射線を検出するエッジオン型の放射線検出器を用いる放射線検出装置に関する。   The present invention relates to a radiation detection apparatus. In particular, the present invention relates to a radiation detection apparatus using an edge-on type radiation detector that detects radiation such as gamma rays and X-rays.

従来の放射線検出器として、複数のコモン電極板と、複数の半導体セルと、複数の電極板とを、コモン電極板、半導体セル、電極板、半導体セル、コモン電極板・・・のように積層させた積層体を２つのフレームの間に設け、一方のフレームと他方のフレームとをピンで固定することにより構成される放射線検出器が知られている（例えば、特許文献１参照。）。   As a conventional radiation detector, a plurality of common electrode plates, a plurality of semiconductor cells, and a plurality of electrode plates are laminated as a common electrode plate, a semiconductor cell, an electrode plate, a semiconductor cell, a common electrode plate, etc. There is known a radiation detector configured by providing a laminated body between two frames and fixing one frame and the other frame with pins (for example, refer to Patent Document 1).

特許文献１に記載の放射線検出器は、横方向に隣接する一対の半導体セルがコモン電極板を共有するので、放射線を検出できない領域を従来より減少させることができ、放射線の検出効率を向上させることができる。   In the radiation detector described in Patent Document 1, since a pair of semiconductor cells adjacent in the horizontal direction share a common electrode plate, it is possible to reduce a region where radiation cannot be detected, and to improve radiation detection efficiency. be able to.

米国特許第６２３６０５１号明細書US Pat. No. 6,236,051

しかし、特許文献１に係る放射線検出器は、コモン電極板、半導体セル等の複数の構成部材を積層させて放射線検出装置が構成されることから、構成部材を積み重ねるごとに各構成部材が有する寸法誤差が加算されるので、複数の半導体セルを高密度で並べつつ、放射線を検出することのできない領域（例えば、コモン電極板が存在する領域等）を低減させることは困難である。   However, since the radiation detector according to Patent Document 1 is configured by stacking a plurality of constituent members such as a common electrode plate and a semiconductor cell to form a radiation detection device, the dimensions of each constituent member each time the constituent members are stacked. Since errors are added, it is difficult to reduce a region where radiation cannot be detected (for example, a region where a common electrode plate exists) while arranging a plurality of semiconductor cells at high density.

したがって、本発明の目的は、放射線検出器を稠密に配置した場合でも、放射線を検出することのできない領域を低減することができる放射線検出装置を提供することにある。   Accordingly, an object of the present invention is to provide a radiation detection apparatus capable of reducing a region where radiation cannot be detected even when the radiation detectors are densely arranged.

本発明は、上記目的を達成するため、放射線を検出可能な複数の半導体素子が固定される基板を有するエッジオン型の放射線検出器を備える放射線検出装置であって、複数の半導体素子それぞれが、放射線が入射する面に複数の素子内ピクセル領域を有し、平面視にてＸ方向と、Ｘ方向に直交するＹ方向とを規定した場合に、複数の放射線検出器それぞれの基板が平行になる配置で複数の放射線検出器がＸ方向に沿って配列され、複数の放射線検出器のそれぞれが、基板の一方の面及び他方の面のそれぞれにＹ方向に配列する複数の半導体素子を有し、基板を挟んで設けられる半導体素子間の距離をＸＧ１、一の放射線検出器の半導体素子から、当該半導体素子に対向し、一の放射線検出器に隣接する他の放射線検出器の半導体素子までの距離をＸＧ２とし、Ｙ方向に配列している半導体素子間の距離をＹＧ１とし、放射線検出器が用いられる所定のピクセルピッチの横ピッチをａ、縦ピッチをｂとし、複数の半導体素子それぞれの放射線が入射する面の幅をｃ、長さをｄとし、複数の半導体素子それぞれの複数の素子内ピクセル領域のうち、複数の半導体素子それぞれの両端部に位置する素子内ピクセル領域の長さをそれぞれｅ、複数の半導体素子それぞれの両端部に位置する素子内ピクセル領域に挟まれる複数の素子内ピクセル領域のそれぞれの長さをｆとした場合に、
ｃ＝ａ−（ＸＧ１＋ＸＧ２）／２
ｄ＝ｂ−ＹＧ１＝２ｅ＋（ｎ−２）ｆ
ｅ＝ｂ／ｎ−ＹＧ１／２
ｆ＝ｂ／ｎ （ただし、ｎは正の整数）の関係を満たす放射線検出装置が提供される。 In order to achieve the above object, the present invention is a radiation detection apparatus including an edge-on type radiation detector having a substrate on which a plurality of semiconductor elements capable of detecting radiation are fixed, and each of the plurality of semiconductor elements includes a radiation When the X-direction and the Y-direction orthogonal to the X-direction are defined in plan view, the substrates of the plurality of radiation detectors are arranged in parallel when there are a plurality of in-element pixel regions on the surface where is incident The plurality of radiation detectors are arranged along the X direction, and each of the plurality of radiation detectors has a plurality of semiconductor elements arranged in the Y direction on one surface and the other surface of the substrate, respectively. XG1, the distance between the semiconductor elements of one radiation detector from the semiconductor element of one radiation detector to the semiconductor element of another radiation detector facing the semiconductor element and adjacent to the one radiation detector Is XG2, the distance between semiconductor elements arranged in the Y direction is YG1, the horizontal pitch of a predetermined pixel pitch in which the radiation detector is used is a, the vertical pitch is b, and the radiation of each of the plurality of semiconductor elements is The width of the incident surface is c, the length is d, and the lengths of the in-element pixel regions located at both ends of each of the plurality of semiconductor elements among the plurality of in-element pixel areas of each of the plurality of semiconductor elements are each e. When the length of each of the plurality of in-element pixel regions sandwiched between the in-element pixel regions located at both ends of each of the plurality of semiconductor elements is f,
c = a- (XG1 + XG2) / 2
d = b−YG1 = 2e + (n−2) f
e = b / n-YG1 / 2
A radiation detection apparatus that satisfies the relationship f = b / n (where n is a positive integer) is provided.

また、上記放射線検出装置において、放射線検出器上に設置可能なマッチドコリメーターのセプタ幅をＣｄとした場合に、
Ｃｄ≧ＸＧ１
Ｃｄ≧ＸＧ２
の関係を満たすことが好ましい。 Further, in the above radiation detector, when the septum width of the matched collimator that can be installed on the radiation detector is Cd,
Cd ≧ XG1
Cd ≧ XG2
It is preferable to satisfy the relationship.

また、上記放射線検出装置において、ＸＧ１＝ＸＧ２の関係を満たすことが好ましい。   Moreover, in the said radiation detection apparatus, it is preferable to satisfy | fill the relationship of XG1 = XG2.

また、上記放射線検出装置において、ＸＧ１＝ＸＧ２＝ＹＧ１の関係を満たすことが好ましい。   Moreover, in the said radiation detection apparatus, it is preferable to satisfy | fill the relationship of XG1 = XG2 = YG1.

また、上記放射線検出装置において、複数の半導体素子のそれぞれが、放射線が入射する面に垂直な一の面に（ｎ−１）個の溝を有すると共に、複数の溝間、及び一の面の反対側の面に電極を有することにより、ｎ個の素子内ピクセル領域が構成されることができる。   In the radiation detection apparatus, each of the plurality of semiconductor elements has (n−1) grooves on one surface perpendicular to the surface on which the radiation is incident, and between the plurality of grooves and on one surface. By having an electrode on the opposite surface, n in-device pixel regions can be configured.

また、上記放射線検出装置において、複数の半導体素子のそれぞれが、基板の一方の面及び他方の面に、基板を対称面として設けられることができる。   In the radiation detection apparatus, each of the plurality of semiconductor elements can be provided on one surface and the other surface of the substrate with the substrate as a symmetrical surface.

本発明に係る放射線検出装置によれば、放射線検出器を稠密に配置した場合でも、放射線を検出することのできない領域を低減することができる放射線検出装置を提供することができる。   According to the radiation detection apparatus according to the present invention, it is possible to provide a radiation detection apparatus that can reduce a region where radiation cannot be detected even when the radiation detectors are densely arranged.

本発明の実施の形態に係る放射線検出器の斜視図である。It is a perspective view of a radiation detector concerning an embodiment of the invention. 本発明の実施の形態に係る半導体素子の斜視図である。1 is a perspective view of a semiconductor element according to an embodiment of the present invention. 本発明の実施の形態に係る放射線検出装置の斜視図である。1 is a perspective view of a radiation detection apparatus according to an embodiment of the present invention. 本実施の形態に係る複数の放射線検出器が配列した状態の概要図である。It is a schematic diagram in the state where a plurality of radiation detectors concerning this embodiment were arranged. 本実施の形態に係る放射線検出器上にマッチドコリメーターを備え付けた場合の模式的な上面図である。It is a typical top view at the time of providing the matched collimator on the radiation detector which concerns on this Embodiment.

［実施の形態］
図１は、本発明の実施の形態に係る放射線検出器の斜視図の概要を示す。 [Embodiment]
FIG. 1 shows an outline of a perspective view of a radiation detector according to an embodiment of the present invention.

（放射線検出器１の構成の概要）
本実施の形態に係る放射線検出器１は、γ線、Ｘ線等の放射線を検出可能な複数の半導体素子１０が固定された基板２０を有し、カード型の形状を呈する放射線検出器である。図１において放射線１００は、紙面の上方から下方に沿って入射してくる。すなわち、放射線１００は、放射線検出器１の半導体素子１０からカードホルダ３０及びカードホルダ３１に向かう方向に沿って伝搬して放射線検出器１に到達する。そして、放射線検出器１は、半導体素子１０の側面（つまり、図１の上方に面している面）に放射線１００が入射する。したがって、半導体素子１０の側面が放射線１００の入射面となっている。このように、半導体素子１０の側面を放射線１００の入射面とする放射線検出器を、本実施の形態ではエッジオン型の放射線検出器と称する。 (Outline of configuration of radiation detector 1)
The radiation detector 1 according to the present embodiment is a radiation detector having a substrate 20 on which a plurality of semiconductor elements 10 capable of detecting radiation such as γ rays and X rays are fixed, and exhibiting a card shape. . In FIG. 1, the radiation 100 enters from the upper side to the lower side of the page. That is, the radiation 100 propagates along the direction from the semiconductor element 10 of the radiation detector 1 toward the card holder 30 and the card holder 31 and reaches the radiation detector 1. In the radiation detector 1, the radiation 100 is incident on the side surface of the semiconductor element 10 (that is, the surface facing upward in FIG. 1). Therefore, the side surface of the semiconductor element 10 is an incident surface for the radiation 100. As described above, the radiation detector in which the side surface of the semiconductor element 10 is the incident surface of the radiation 100 is referred to as an edge-on type radiation detector in the present embodiment.

なお、放射線検出器１は、特定の方向（例えば、放射線検出器１に向かう方向）に沿って伝搬してくる放射線１００が通過する複数の開口を有するコリメータ（例えば、マッチドコリメーター、ピンホールコリメーター等）を介して放射線１００を検出する複数の放射線検出器１が並べられて構成される放射線検出装置用の放射線検出器１として用いることができる。   The radiation detector 1 includes a collimator (for example, a matched collimator, a pinhole collimator) having a plurality of openings through which the radiation 100 propagating along a specific direction (for example, a direction toward the radiation detector 1) passes. It can be used as a radiation detector 1 for a radiation detection apparatus configured by arranging a plurality of radiation detectors 1 that detect radiation 100 via a meter or the like.

図１を参照すると、放射線検出器１は、放射線１００を検出可能な一対の半導体素子１０と、薄い基板２０と、一対の半導体素子１０の隣接部分にて基板２０を挟み込むことにより基板２０を支持するカードホルダ３０及びカードホルダ３１とを備える。そして、本実施の形態においては、一対の半導体素子１０が４組、基板２０を挟み込む位置において基板２０に固定される。すなわち、各組の一対の半導体素子１０は、基板２０の一方の面と他方の面とのそれぞれに基板２０を対称面として対称の位置に固定される。   Referring to FIG. 1, the radiation detector 1 supports a substrate 20 by sandwiching the substrate 20 between a pair of semiconductor elements 10 capable of detecting the radiation 100, a thin substrate 20, and adjacent portions of the pair of semiconductor elements 10. Card holder 30 and card holder 31 are provided. In the present embodiment, four pairs of semiconductor elements 10 are fixed to the substrate 20 at positions where the substrate 20 is sandwiched. That is, the pair of semiconductor elements 10 in each set is fixed to a symmetric position with the substrate 20 as a symmetry plane on each of one surface and the other surface of the substrate 20.

また、基板２０はカードホルダ３０とカードホルダ３１とに挟み込まれて支持される。カードホルダ３０とカードホルダ３１とはそれぞれ同一形状を有して形成され、カードホルダ３０が有する溝付穴３４にカードホルダ３１が有する突起部３６が嵌め合うと共に、カードホルダ３１が有する溝付穴３４（図示しない）にカードホルダ３０が有する突起部３６（図示しない）が嵌め合うことにより基板２０を支持する。   The substrate 20 is supported by being sandwiched between a card holder 30 and a card holder 31. The card holder 30 and the card holder 31 are formed to have the same shape, and the protruding portion 36 of the card holder 31 is fitted into the grooved hole 34 of the card holder 30 and the grooved hole of the card holder 31 is fitted. The board | substrate 20 is supported by the projection part 36 (not shown) which the card holder 30 has fitting to 34 (not shown).

また、弾性部材実装部３２及び凹部３２ａは、複数の放射線検出器１を支持する放射線検出器立てに放射線検出器１が挿入された場合に、放射線検出器１を放射線検出器立てに押し付けて固定する弾性部材が設けられる部分である。なお、放射線検出器立てはカードエッジ部２９が挿入されるコネクタを有しており、放射線検出器１は、カードエッジ部２９がコネクタに挿入され、コネクタとパターン２９ａとが電気的に接続することにより外部の電気回路としての制御回路、外部からの電源線、グランド線等に電気的に接続される。   The elastic member mounting portion 32 and the recess 32a are fixed by pressing the radiation detector 1 against the radiation detector stand when the radiation detector 1 is inserted into the radiation detector stand supporting the plurality of radiation detectors 1. This is a portion where an elastic member is provided. The radiation detector stand has a connector into which the card edge portion 29 is inserted. In the radiation detector 1, the card edge portion 29 is inserted into the connector, and the connector and the pattern 29a are electrically connected. Thus, the circuit is electrically connected to a control circuit as an external electric circuit, an external power supply line, a ground line, and the like.

また、放射線検出器１は、一対の半導体素子１０の基板２０の反対側に、各半導体素子１０の電極パターンと複数の基板端子２２とのそれぞれを電気的に接続する配線パターン（なお、半導体素子１０の基板２０の反対側の素子表面の電極パターン、及びフレキシブル基板４０の半導体素子１０側の配線パターンは図示しない）を有するフレキシブル基板４０を更に備える。   The radiation detector 1 includes a wiring pattern (semiconductor element) that electrically connects the electrode pattern of each semiconductor element 10 and the plurality of substrate terminals 22 to the opposite side of the substrate 20 of the pair of semiconductor elements 10. 10 is further provided with a flexible substrate 40 having an electrode pattern on the element surface opposite to the substrate 20 and a wiring pattern on the semiconductor element 10 side of the flexible substrate 40 (not shown).

フレキシブル基板４０は、一対の半導体素子１０の一方の半導体素子１０側、及び他方の半導体素子１０側の双方に設けられる（なお、本実施の形態においては、４組の一対の半導体素子１０の一方の半導体素子１０側のそれぞれと、他方の半導体素子１０側のそれぞれとの双方に、フレキシブル基板４０がそれぞれ設けられる）。そして、フレキシブル基板４０の複数の配線パターンの一端はそれぞれ、カードホルダ３０及びカードホルダ３１の複数のフレキリード結合部のそれぞれにおいて基板端子２２に電気的に接続する。具体的に、フレキシブル基板４０の配線パターンの一方の端は、半導体素子１０の素子表面に導電性接着剤等で接続される。そして、当該配線パターンの他方の端は、基板端子２２の端子表面に導電性接着剤等を用いて電気的に接続される。なお、基板端子２２は基板２０の表面に設けられており、基板２０の配線パターンに電気的に接続されている。   The flexible substrate 40 is provided on both the one semiconductor element 10 side and the other semiconductor element 10 side of the pair of semiconductor elements 10 (in the present embodiment, one of the four pairs of semiconductor elements 10). The flexible substrate 40 is provided on each of the semiconductor element 10 side and the other semiconductor element 10 side). One end of each of the plurality of wiring patterns of the flexible substrate 40 is electrically connected to the substrate terminal 22 at each of the plurality of flexible lead coupling portions of the card holder 30 and the card holder 31. Specifically, one end of the wiring pattern of the flexible substrate 40 is connected to the element surface of the semiconductor element 10 with a conductive adhesive or the like. The other end of the wiring pattern is electrically connected to the terminal surface of the substrate terminal 22 using a conductive adhesive or the like. The substrate terminal 22 is provided on the surface of the substrate 20 and is electrically connected to the wiring pattern of the substrate 20.

（基板２０の詳細）
基板２０は、金属導体等の導電性材料からなる導電性薄膜（例えば、銅箔）が表面に形成された薄肉基板（例えば、ＦＲ４等のガラスエポキシ基板）を、ソルダーレジスト等の絶縁材料からなる絶縁層で挟んで可撓性を有して形成される。なお、基板２０は、一例として、幅広の方向、すなわち長手方向は４０ｍｍ程度の長さを有して形成される。そして、基板２０は、幅広の部分の端部から幅が狭くなっている部分の端部までの短手方向において、２０ｍｍ程度の長さを有して形成される。ここで、基板２０は放射線を検出できない領域であるので、一対の半導体素子１０によって挟まれる基板２０の領域は不感領域になる。よって、基板２０の厚さは、薄いことが好ましい。具体的に、基板２０は、０．４ｍｍ以下の厚さを有することが好ましい。本実施の形態では、一例として、基板２０は、０．２ｍｍの厚さを有する。 (Details of substrate 20)
The substrate 20 is a thin substrate (for example, a glass epoxy substrate such as FR4) on which a conductive thin film (for example, copper foil) made of a conductive material such as a metal conductor is formed, and is made of an insulating material such as a solder resist. It is formed with flexibility by being sandwiched between insulating layers. As an example, the substrate 20 is formed to have a length of about 40 mm in the wide direction, that is, the longitudinal direction. The substrate 20 is formed to have a length of about 20 mm in the short direction from the end of the wide portion to the end of the narrow portion. Here, since the substrate 20 is a region where radiation cannot be detected, the region of the substrate 20 sandwiched between the pair of semiconductor elements 10 becomes a dead region. Therefore, it is preferable that the thickness of the substrate 20 is thin. Specifically, the substrate 20 preferably has a thickness of 0.4 mm or less. In the present embodiment, as an example, the substrate 20 has a thickness of 0.2 mm.

また、基板２０は、半導体素子１０の電極パターンに電気的に接続する第１の配線パターンを有する。第１の配線パターンは、カードエッジ部２９のパターン２９ａに電気的に接続するように形成される。更に、基板２０は、基板端子２２とカードエッジ部２９のパターン２９ａとを電気的に接続する第２の配線パターンを有する。これにより、基板２０において、半導体素子１０の基板２０側の面の電極は、基板２０の第１の配線パターンによりカードエッジ部２９のパターン２９ａに電気的に接続される。また、半導体素子１０の基板２０側の反対側の面の電極は、フレキシブル基板４０の配線パターンと、基板端子２２と、基板２０の第２の配線パターンとを経由してカードエッジ部２９のパターン２９ａに電気的に接続される。ここで、例えば、半導体素子１０の基板２０側の電極をアノード電極、半導体素子１０の基板２０側の反対側の面の電極をカソード電極とする。この場合、アノード電極からの信号とカソード電極からの信号とはそれぞれ、カードエッジ部２９のパターン２９ａを介し、外部の電気回路へ出力される。   The substrate 20 has a first wiring pattern that is electrically connected to the electrode pattern of the semiconductor element 10. The first wiring pattern is formed so as to be electrically connected to the pattern 29 a of the card edge portion 29. Further, the substrate 20 has a second wiring pattern that electrically connects the substrate terminal 22 and the pattern 29 a of the card edge portion 29. Thereby, in the board | substrate 20, the electrode of the surface at the side of the board | substrate 20 of the semiconductor element 10 is electrically connected to the pattern 29a of the card edge part 29 by the 1st wiring pattern of the board | substrate 20. The electrode on the surface opposite to the substrate 20 side of the semiconductor element 10 is connected to the pattern of the card edge portion 29 via the wiring pattern of the flexible substrate 40, the substrate terminal 22, and the second wiring pattern of the substrate 20. It is electrically connected to 29a. Here, for example, an electrode on the substrate 20 side of the semiconductor element 10 is an anode electrode, and an electrode on the opposite side of the substrate 20 side of the semiconductor element 10 is a cathode electrode. In this case, the signal from the anode electrode and the signal from the cathode electrode are each output to an external electric circuit via the pattern 29 a of the card edge portion 29.

（半導体素子１０の詳細）
図２は、本実施の形態に係る放射線検出器が備える１つの半導体素子の斜視図の概要である。 (Details of semiconductor element 10)
FIG. 2 is an outline of a perspective view of one semiconductor element included in the radiation detector according to the present embodiment.

半導体素子１０は、略直方体状に形成され、素子表面１０ｃと、この素子表面１０ｃの反対側の素子表面とのそれぞれに電極パターンが設けられる（図示しない）。放射線は各半導体素子１０の端部から入射して、カードエッジ部２９側に向かって半導体素子１０中を走行する。また、本実施の形態に係る半導体素子１０は、放射線が入射する面に垂直な一の面である素子表面１０ｃに複数の溝１０ｂが設けられる。溝１０ｂの幅は、一例として、０．２ｍｍである。   The semiconductor element 10 is formed in a substantially rectangular parallelepiped shape, and an electrode pattern is provided on each of the element surface 10c and the element surface opposite to the element surface 10c (not shown). Radiation enters from the end of each semiconductor element 10 and travels through the semiconductor element 10 toward the card edge portion 29 side. Further, in the semiconductor element 10 according to the present embodiment, a plurality of grooves 10b are provided on the element surface 10c, which is one surface perpendicular to the surface on which the radiation is incident. As an example, the width of the groove 10b is 0.2 mm.

そして、放射線が入射する半導体素子１０の面であって、各溝１０ｂから、溝１０ｂが設けられている面の反対側の面への仮想的な垂線により区切られる領域、及び当該仮想的な垂線と半導体素子１０の端部とで区切られる領域を、本実施の形態では素子内ピクセル領域１０ａとして表す。半導体素子１０が、（ｎ−１）個の溝１０ｂを有すると共に、複数の溝１０ｂ間、及び素子表面１０ｃの反対側の面にそれぞれ電極を有することにより、ｎ個の素子内ピクセル領域１０ａが構成される。複数の素子内ピクセル領域１０ａのそれぞれが、放射線を検出する実効的な１つの画素（ピクセル）に対応する。これにより、一の半導体素子１０は、複数の画素を有することになる。   A region of the semiconductor element 10 on which the radiation is incident, the region separated from each groove 10b by a virtual perpendicular to the surface opposite to the surface where the groove 10b is provided, and the virtual perpendicular In the present embodiment, a region divided by the semiconductor element 10 and the end portion of the semiconductor element 10 is represented as an in-element pixel region 10a. The semiconductor element 10 has (n-1) grooves 10b, and electrodes are provided between the plurality of grooves 10b and on the surface opposite to the element surface 10c, so that n element pixel regions 10a are formed. Composed. Each of the plurality of in-element pixel regions 10a corresponds to one effective pixel (pixel) for detecting radiation. Thereby, one semiconductor element 10 has a plurality of pixels.

そして、一例として、１つの放射線検出器１が８つの半導体素子１０（４組の一対の半導体素子１０）を備え、１つの半導体素子１０がそれぞれ８つの素子内ピクセル領域１０ａを有する場合、１つの放射線検出器１は、６４ピクセルの解像度を有することになる。溝１０ｂの数を増減させることにより、一の半導体素子１０のピクセル数を増減させることができる。   As an example, when one radiation detector 1 includes eight semiconductor elements 10 (four pairs of semiconductor elements 10) and each semiconductor element 10 includes eight in-element pixel regions 10a, The radiation detector 1 will have a resolution of 64 pixels. By increasing or decreasing the number of grooves 10b, the number of pixels of one semiconductor element 10 can be increased or decreased.

ここで、半導体素子１０の放射線が入射する面の幅を「ｃ」、放射線が入射する面の長さを「ｄ」、半導体素子１０の高さを「ｈ」とする。平面視にてＸ方向と、Ｘ方向に直交するＹ方向とを規定した場合に、幅についてはＸ方向に、長さについてはＹ方向で規定することにする。なお、一例として、幅ｃは１．２ｍｍ程度、長さｄは１１．２ｍｍ程度、高さｈは５ｍｍ程度である。   Here, the width of the surface on which the radiation of the semiconductor element 10 is incident is “c”, the length of the surface on which the radiation is incident is “d”, and the height of the semiconductor element 10 is “h”. When the X direction and the Y direction orthogonal to the X direction are defined in plan view, the width is defined in the X direction and the length is defined in the Y direction. As an example, the width c is about 1.2 mm, the length d is about 11.2 mm, and the height h is about 5 mm.

そして、半導体素子１０の複数の素子内ピクセル領域１０ａのうち、複数の半導体素子１０それぞれの両端部に位置する素子内ピクセル領域１０ａの長さをそれぞれ「ｅ」、半導体素子１０の両端部に位置する素子内ピクセル領域１０ａに挟まれる複数の素子内ピクセル領域１０ａそれぞれの長さを「ｆ」とする。すなわち、半導体素子１０の長さ方向において、半導体素子１０の端部から一番目の溝１０ｂまでの距離を「ｅ」と規定し、一の溝１０ｂから、当該一の溝１０ｂに隣接する他の溝１０ｂまでの距離を「ｆ」と規定する。したがって、「ｄ＝２ｅ＋（ｎ−２）ｆ （ただし、ｎは正の整数）」という関係式が成り立つ。図２の例においては、「ｎ＝８」の例、すなわち、一つの半導体素子１０に８つの素子内ピクセル領域１０ａが形成されている例を示している。   The lengths of the in-element pixel regions 10 a located at both ends of each of the plurality of semiconductor elements 10 among the plurality of in-element pixel regions 10 a of the semiconductor element 10 are respectively “e”, and are located at both ends of the semiconductor element 10. The length of each of the plurality of in-element pixel regions 10a sandwiched between the in-element pixel regions 10a is “f”. That is, in the length direction of the semiconductor element 10, the distance from the end of the semiconductor element 10 to the first groove 10 b is defined as “e”, and from one groove 10 b to another adjacent to the one groove 10 b The distance to the groove 10b is defined as “f”. Therefore, the relational expression “d = 2e + (n−2) f (where n is a positive integer)” holds. In the example of FIG. 2, an example of “n = 8”, that is, an example in which eight element pixel regions 10 a are formed in one semiconductor element 10 is illustrated.

半導体素子１０を構成する材料としては、ＣｄＴｅを用いることができる。また、γ線等の放射線を検出できる限り、半導体素子１０はＣｄＴｅ素子に限られない。例えば、半導体素子１０として、ＣｄＺｎＴｅ（ＣＺＴ）素子、ＨｇＩ２素子等の化合物半導体素子を用いることもできる。なお、半導体素子１０はそれぞれ、Ａｇペースト等の導電性接着材により基板２０の配線パターンに電気的に接続される。 As a material constituting the semiconductor element 10, CdTe can be used. Further, the semiconductor element 10 is not limited to a CdTe element as long as radiation such as γ rays can be detected. For example, a compound semiconductor element such as a CdZnTe (CZT) element or an HgI 2 element can also be used as the semiconductor element 10. Each of the semiconductor elements 10 is electrically connected to the wiring pattern of the substrate 20 by a conductive adhesive such as Ag paste.

（放射線検出装置の概要）
図３は、本発明の実施の形態に係る放射線検出装置の斜視図の一例を示す。 (Outline of radiation detector)
FIG. 3 shows an example of a perspective view of the radiation detection apparatus according to the embodiment of the present invention.

放射線検出器１は、例えば、複数の放射線検出器１を放射線検出器立て５によって保持することにより構成される放射線検出装置１１９の放射線検出器１として用いることができる。一例として、複数の放射線検出器１が並べられる間隔に応じて予め定められた距離をおいて並び、複数の放射線検出器１が挿入される複数の溝が形成された複数の支持体２と、支持体２を搭載する支持板３と、複数の支持体２の間に設けられ、複数の放射線検出器１のカードエッジ部２９のそれぞれが接続されて外部の制御回路と複数の放射線検出器１のそれぞれとを接続する複数のコネクタ４とを備える放射線検出器立て５に複数の放射線検出器１を保持することができる。図３においては、Ｘ方向に沿って、放射線検出器立て５に１６枚の放射線検出器１が挿入、保持されている例を示す。また、放射線検出器１の弾性部材実装部３２及び凹部３２ａには、例えば、板金からなるばね部材が組み込まれ、支持体２の溝に放射線検出器１が挿入された場合に、このばね部材により放射線検出器１が支持体２に押し付けられて固定される。   The radiation detector 1 can be used as, for example, the radiation detector 1 of the radiation detection device 119 configured by holding a plurality of radiation detectors 1 by the radiation detector stand 5. As an example, a plurality of supports 2 in which a plurality of radiation detectors 1 are arranged at a predetermined distance according to an interval at which the plurality of radiation detectors 1 are arranged, and a plurality of grooves into which the plurality of radiation detectors 1 are inserted are formed; Provided between the support plate 3 on which the support body 2 is mounted and the plurality of support bodies 2, each of the card edge portions 29 of the plurality of radiation detectors 1 is connected to the external control circuit and the plurality of radiation detectors 1. A plurality of radiation detectors 1 can be held in a radiation detector stand 5 provided with a plurality of connectors 4 for connecting each of them. FIG. 3 shows an example in which 16 radiation detectors 1 are inserted and held in the radiation detector stand 5 along the X direction. Moreover, when the elastic member mounting part 32 and the recessed part 32a of the radiation detector 1 incorporate a spring member made of sheet metal, for example, and the radiation detector 1 is inserted into the groove of the support 2, the spring member The radiation detector 1 is pressed against the support 2 and fixed.

本実施の形態においては、複数の放射線検出器１が、Ｘ方向に沿って配置されることにより、平面視にてマトリックス状に配列され、１つの放射線検出装置１１９として構成される。なお、複数の放射線検出器１をＹ方向に沿って配置することもできる。   In the present embodiment, a plurality of radiation detectors 1 are arranged along the X direction, so that they are arranged in a matrix in a plan view and configured as one radiation detection device 119. A plurality of radiation detectors 1 can also be arranged along the Y direction.

（放射線検出器１の配列の概要）
図４は、本実施の形態に係る複数の放射線検出器が配列した状態の概要の一部を示す。 (Outline of arrangement of radiation detectors 1)
FIG. 4 shows a part of an outline of a state in which a plurality of radiation detectors according to the present embodiment are arranged.

図４は、複数の放射線検出器を放射線が入射する側（すなわち、上面側）からの図であり、説明の便宜上、半導体素子１０の溝１０ｂ、基板２０の配線パターン、フレキシブル基板４０等の図示は省略する。   FIG. 4 is a view from the radiation incident side (that is, the upper surface side) of a plurality of radiation detectors. For convenience of explanation, illustration of the groove 10b of the semiconductor element 10, the wiring pattern of the substrate 20, the flexible substrate 40, etc. Is omitted.

本実施の形態においては、複数の放射線検出器１それぞれの基板２０が平行になる配置で複数の放射線検出器１がＸ方向に沿って配列される。そして、複数の放射線検出器１のそれぞれが、基板２０の一方の面及び他方の面のそれぞれにＹ方向に直列に配列する複数の半導体素子１０を有する。   In the present embodiment, the plurality of radiation detectors 1 are arranged along the X direction in an arrangement in which the substrates 20 of the plurality of radiation detectors 1 are parallel to each other. Each of the plurality of radiation detectors 1 includes a plurality of semiconductor elements 10 arranged in series in the Y direction on each of one surface and the other surface of the substrate 20.

ここで、基板２０を挟んで設けられる半導体素子１０間の距離を「ＸＧ１」、一の放射線検出器１の半導体素子１０から、当該半導体素子１０に対向し、一の放射線検出器１に隣接する他の放射線検出器１の半導体素子１０までの距離を「ＸＧ２」とする。また、Ｙ方向に配列している半導体素子１０間の距離を「ＹＧ１」とし、放射線検出器１が用いられる所定の半導体素子ピッチ１１０の横ピッチを「ａ」、縦ピッチを「ｂ」とする。なお、図４において、破線で区切られる長方形状の一つ一つが本実施の形態に係る半導体素子ピッチ１１０に該当する。   Here, the distance between the semiconductor elements 10 provided across the substrate 20 is “XG1”, the semiconductor element 10 of one radiation detector 1 faces the semiconductor element 10 and is adjacent to the one radiation detector 1. The distance to the semiconductor element 10 of the other radiation detector 1 is “XG2”. Further, the distance between the semiconductor elements 10 arranged in the Y direction is “YG1”, the horizontal pitch of the predetermined semiconductor element pitch 110 in which the radiation detector 1 is used is “a”, and the vertical pitch is “b”. . In FIG. 4, each rectangular shape divided by broken lines corresponds to the semiconductor element pitch 110 according to the present embodiment.

ここで、複数の放射線検出器１が有する複数の半導体素子１０それぞれのサイズを以下の４つの関係式を満たすサイズに規定する。
ｃ＝ａ−（ＸＧ１＋ＸＧ２）／２
ｄ＝ｂ−ＹＧ１＝２ｅ＋（ｎ−２）ｆ
ｅ＝ｂ／ｎ−ＹＧ１／２
ｆ＝ｂ／ｎ （ただし、ｎは正の整数） Here, the size of each of the plurality of semiconductor elements 10 included in the plurality of radiation detectors 1 is defined as a size satisfying the following four relational expressions.
c = a- (XG1 + XG2) / 2
d = b−YG1 = 2e + (n−2) f
e = b / n-YG1 / 2
f = b / n (where n is a positive integer)

ここで、複数の放射線検出器１が配列された放射線検出装置の上方にマッチドコリメーターを設置する場合は、以下の関係式を満たす配置にすることが好ましい。なお、以下の２つの関係式においてマッチドコリメーターのセプタ幅をＣｄとする。セプタ幅は、一例として、０．２ｍｍ以上０．３ｍｍ以下程度である。また、ＸＧ１は０．１８ｍｍ以上０．２ｍｍ以下程度であり、ＸＧ２は０．２０ｍｍ以上０．２４ｍｍ以下程度である。   Here, when a matched collimator is installed above a radiation detection apparatus in which a plurality of radiation detectors 1 are arranged, it is preferable that the arrangement satisfy the following relational expression. In the following two relational expressions, the ceptor width of the matched collimator is Cd. As an example, the septa width is about 0.2 mm or more and 0.3 mm or less. XG1 is about 0.18 mm to 0.2 mm, and XG2 is about 0.20 mm to 0.24 mm.

Ｃｄ≧ＸＧ１
Ｃｄ≧ＸＧ２ Cd ≧ XG1
Cd ≧ XG2

また、マッチドコリメーターのセプタ幅と、放射線検出器１の基板２０等の存在により、若しくは複数の放射線検出器１が配列された場合に各放射線検出器１間の隙間により生じる放射線を検出することができない不感領域の幅とを一致させることを目的とした場合、ＸＧ１＝ＸＧ２の関係を満たすことがより好ましく、ＸＧ１＝ＸＧ２＝ＹＧ１の関係を満たすことが更に好ましい。   In addition, the radiation generated by the gap between the radiation detectors 1 due to the scepter width of the matched collimator and the presence of the substrate 20 of the radiation detector 1 or when a plurality of radiation detectors 1 are arranged is detected. For the purpose of matching the width of the insensitive area that cannot be satisfied, it is more preferable to satisfy the relationship of XG1 = XG2, and it is even more preferable to satisfy the relationship of XG1 = XG2 = YG1.

図５は、本実施の形態に係る放射線検出器上にマッチドコリメーターを備え付けた場合の模式的な上面図である。   FIG. 5 is a schematic top view when a matched collimator is provided on the radiation detector according to the present embodiment.

マッチドコリメーター５０は、複数の放射線検出器１が配列されて構成される１つ以上の放射線検出装置を覆うように設けられる。そして、マッチドコリメーター５０を用いる場合において、マッチドコリメーター５０の複数の開口５１それぞれの位置と、半導体素子１０の複数の素子内ピクセル領域１０ａそれぞれの位置とを対応させることが要求される。この対応関係がずれた場合、素子内ピクセル領域１０ａの位置にマッチドコリメーター５０の複数の開口５１を隔てるセプタ５２（「隔壁」という場合もある）が位置することになる。この場合、素子内ピクセル領域１０ａとセプタ５２とが重なった領域は、放射線を検出することができない不感領域になる。   The matched collimator 50 is provided so as to cover one or more radiation detection devices configured by arranging a plurality of radiation detectors 1. When the matched collimator 50 is used, it is required that the positions of the plurality of openings 51 of the matched collimator 50 correspond to the positions of the plurality of in-element pixel regions 10 a of the semiconductor element 10. When this correspondence is deviated, a septa 52 (also referred to as a “partition wall”) that separates the plurality of openings 51 of the matched collimator 50 is positioned at the position of the in-element pixel region 10a. In this case, a region where the in-element pixel region 10a and the septa 52 overlap becomes a dead region where radiation cannot be detected.

そこで、上述した４つの関係式、すなわち、
ｃ＝ａ−（ＸＧ１＋ＸＧ２）／２
ｄ＝ｂ−ＹＧ１＝２ｅ＋（ｎ−２）ｆ
ｅ＝ｂ／ｎ−ＹＧ１／２
ｆ＝ｂ／ｎ （ただし、ｎは正の整数）
という関係式を満たすように複数の半導体素子１０のサイズを決定し、複数の放射線検出器１を配列することにより、複数の放射線検出器１に内包される不可避的な不感領域（例えば、半導体素子１０の電極が存在する領域、基板２０の配線パターンが存在する領域、基板２０が存在する領域、フレキシブル基板４０が存在する領域、一の放射線検出器１と一の放射線検出器に隣接する他の放射線検出器１との間の領域等）とセプタ５２の位置とを対応させることができる。 Therefore, the above four relational expressions, that is,
c = a- (XG1 + XG2) / 2
d = b−YG1 = 2e + (n−2) f
e = b / n-YG1 / 2
f = b / n (where n is a positive integer)
The size of the plurality of semiconductor elements 10 is determined so as to satisfy the following relational expression, and the plurality of radiation detectors 1 are arranged, whereby an inevitable insensitive region (for example, a semiconductor element) included in the plurality of radiation detectors 1 A region where 10 electrodes are present, a region where a wiring pattern of the substrate 20 is present, a region where the substrate 20 is present, a region where the flexible substrate 40 is present, one radiation detector 1 and another adjacent to one radiation detector The area between the radiation detector 1 and the like) and the position of the septa 52 can be made to correspond to each other.

（実施の形態の効果）
本発明の実施の形態に係る放射線検出器１は、特定の関係式により半導体素子１０のサイズを規定すると共に、素子内ピクセル領域１０ａの幅を規定したので、放射線検出器１に由来する不感領域と、例えば、マッチドコリメーター５０のセプタ５２幅とを容易に一致させることができる。これにより不感領域を低減できるので、放射線検出器１を稠密に配置した場合でも不感領域を低減でき、放射線検出感度の高い放射線検出器１及び放射線検出器１を備える放射線検出装置を提供することができる。 (Effect of embodiment)
In the radiation detector 1 according to the embodiment of the present invention, the size of the semiconductor element 10 is defined by a specific relational expression and the width of the in-element pixel region 10a is defined. Therefore, the insensitive area derived from the radiation detector 1 For example, the width of the septa 52 of the matched collimator 50 can be easily matched. Thus, since the insensitive area can be reduced, it is possible to reduce the insensitive area even when the radiation detectors 1 are densely arranged, and to provide a radiation detector 1 including the radiation detector 1 and the radiation detector 1 having high radiation detection sensitivity. it can.

また、本実施の形態に係る放射線検出器１はエッジオン型であり、平面寸法が比較的大きなプラナー形状の半導体素子を製造することを要さない。したがって、本実施の形態においては、プラナー形状の半導体素子を製造する場合に比べ、より均質な結晶の半導体素子１を歩留り良く得られるので放射線検出器１の製造コストを低減できる。また、放射線検出器１がエッジオン型であることから、ｓｍａｌｌ ｐｉｘｅｌ ｅｆｆｅｃｔ及びｃｏ−ｐｌａｎａｒ ｇｒｉｄ技術が不要となり、ｓｍａｌｌ ｐｉｘｅｌ ｅｆｆｅｃｔに伴うＣｈａｒｇｅ ｓｈａｒｉｎｇがないという利点もある。   Further, the radiation detector 1 according to the present embodiment is an edge-on type, and it is not necessary to manufacture a planar semiconductor element having a relatively large planar dimension. Therefore, in the present embodiment, the semiconductor element 1 having a more uniform crystal can be obtained with a high yield as compared with the case of manufacturing a planar semiconductor element, so that the manufacturing cost of the radiation detector 1 can be reduced. In addition, since the radiation detector 1 is an edge-on type, the small pixel effect and co-planar grid techniques are unnecessary, and there is an advantage that there is no charge sharing associated with the small pixel effect.

また、エッジオン型の放射線検出器１であることから、半導体素子１の高さｈを高くしても（すなわち、放射線が走行する深さを深くしても）、電極間距離は変わらないので電荷収集効率の低下が少ない。これにより、本実施の形態に係る放射線検出器１は、高エネルギーのγ線を効率よく検出できる。なお、本実施の形態に係る放射線検出器１及び放射線検出器１を備える放射線検出装置において、ガンマカメラ等に用いられる放射線核種の一例を表１に示す。   In addition, since the radiation detector 1 is an edge-on type radiation detector, even if the height h of the semiconductor element 1 is increased (that is, the depth of travel of the radiation is increased), the distance between the electrodes does not change, so that the charge is increased. Little decrease in collection efficiency. Thereby, the radiation detector 1 concerning this Embodiment can detect a high energy gamma ray efficiently. Table 1 shows an example of a radionuclide used in a gamma camera or the like in the radiation detector 1 and the radiation detection apparatus including the radiation detector 1 according to the present embodiment.

Figure 0005683856
Figure 0005683856

以上、本発明の実施の形態を説明したが、上記に記載した実施の形態は特許請求の範囲に係る発明を限定するものではない。また、実施の形態の中で説明した特徴の組合せの全てが発明の課題を解決するための手段に必須であるとは限らない点に留意すべきである。   While the embodiments of the present invention have been described above, the embodiments described above do not limit the invention according to the claims. In addition, it should be noted that not all the combinations of features described in the embodiments are essential to the means for solving the problems of the invention.

１ 放射線検出器
２ 支持体
３ 支持板
４ コネクタ
１０ 半導体素子
１０ａ 素子内ピクセル領域
１０ｂ 溝
１０ｄ 素子表面
２０ 基板
２２ 基板端子
２９ カードエッジ部
２９ａ パターン
３０、３１ カードホルダ
３２ 弾性部材実装部
３２ａ 凹部
３４ 溝付穴
３６ 突起部
４０ フレキシブル基板
５０ マッチドコリメーター
５１ 開口
５２ セプタ
１００ 放射線
１１０ 半導体素子ピッチ
１１９ 放射線検出装置 DESCRIPTION OF SYMBOLS 1 Radiation detector 2 Support body 3 Support plate 4 Connector 10 Semiconductor element 10a In-element pixel area 10b Groove 10d Element surface 20 Substrate 22 Substrate terminal 29 Card edge part 29a Pattern 30, 31 Card holder 32 Elastic member mounting part 32a Concave part 34 Groove Attached hole 36 Projection 40 Flexible substrate 50 Matched collimator 51 Aperture 52 Septa 100 Radiation 110 Semiconductor element pitch 119 Radiation detection device

Claims (6)

放射線を検出可能な複数の半導体素子が固定される基板を有するエッジオン型の放射線検出器を備える放射線検出装置であって、
前記複数の半導体素子それぞれが、前記放射線が入射する面に複数の素子内ピクセル領域を有し、
平面視にてＸ方向と、前記Ｘ方向に直交するＹ方向とを規定した場合に、複数の前記放射線検出器それぞれの前記基板が平行になる配置で複数の前記放射線検出器が前記Ｘ方向に沿って配列され、
複数の前記放射線検出器のそれぞれが、前記基板の一方の面及び他方の面のそれぞれに前記Ｙ方向に配列する前記複数の半導体素子を有し、
前記基板を挟んで設けられる前記半導体素子間の距離をＸＧ１、一の前記放射線検出器の前記半導体素子から、当該半導体素子に対向し、前記一の放射線検出器に隣接する他の放射線検出器の前記半導体素子までの距離をＸＧ２とし、
前記Ｙ方向に配列している前記半導体素子間の距離をＹＧ１とし、
前記放射線検出器が用いられる所定のピクセルピッチの横ピッチをａ、縦ピッチをｂとし、前記複数の半導体素子それぞれの放射線が入射する面の幅をｃ、長さをｄとし、前記複数の半導体素子それぞれの前記複数の素子内ピクセル領域のうち、前記複数の半導体素子それぞれの両端部に位置する素子内ピクセル領域の長さをそれぞれｅ、前記複数の半導体素子それぞれの両端部に位置する素子内ピクセル領域に挟まれる複数の素子内ピクセル領域のそれぞれの長さをｆとした場合に、
ｃ＝ａ−（ＸＧ１＋ＸＧ２）／２
ｄ＝ｂ−ＹＧ１＝２ｅ＋（ｎ−２）ｆ
ｅ＝ｂ／ｎ−ＹＧ１／２
ｆ＝ｂ／ｎ （ただし、ｎは３以上の正の整数）
の関係を満たす放射線検出装置。 A radiation detection apparatus comprising an edge-on type radiation detector having a substrate on which a plurality of semiconductor elements capable of detecting radiation are fixed,
Each of the plurality of semiconductor elements has a plurality of in-element pixel regions on a surface on which the radiation is incident,
When the X direction and the Y direction orthogonal to the X direction are defined in a plan view, the plurality of radiation detectors are arranged in the X direction in an arrangement in which the substrates of the plurality of radiation detectors are parallel to each other. Arranged along
Each of the plurality of radiation detectors includes the plurality of semiconductor elements arranged in the Y direction on each of one surface and the other surface of the substrate,
The distance between the semiconductor elements provided across the substrate is XG1, from the semiconductor element of one radiation detector to the semiconductor element, and to the other radiation detector adjacent to the one radiation detector. The distance to the semiconductor element is XG2,
The distance between the semiconductor elements arranged in the Y direction is YG1,
The horizontal pitch of a predetermined pixel pitch in which the radiation detector is used is a, the vertical pitch is b, the width of the incident surface of each of the semiconductor elements is c, the length is d, and the semiconductors Of the plurality of in-element pixel regions of each element, the length of the in-element pixel region located at both ends of each of the plurality of semiconductor elements is e, and the length of each of the plurality of semiconductor elements is within the element located at both ends When the length of each of the plurality of in-element pixel regions sandwiched between the pixel regions is f,
c = a- (XG1 + XG2) / 2
d = b−YG1 = 2e + (n−2) f
e = b / n-YG1 / 2
f = b / n (where n is a positive integer of 3 or more )
Radiation detection device that satisfies the relationship. 放射線検出器上に設置可能なマッチドコリメーターのセプタ幅をＣｄとした場合に、
Ｃｄ≧ＸＧ１
Ｃｄ≧ＸＧ２
の関係を満たす請求項１に記載の放射線検出装置。 When the scepter width of the matched collimator that can be installed on the radiation detector is Cd,
Cd ≧ XG1
Cd ≧ XG2
The radiation detection apparatus according to claim 1, satisfying the relationship: ＸＧ１＝ＸＧ２の関係を満たす請求項２に記載の放射線検出装置。 The radiation detection apparatus according to claim 2, wherein XG1 = XG2 is satisfied. ＸＧ１＝ＸＧ２＝ＹＧ１の関係を満たす請求項３に記載の放射線検出装置。 The radiation detection apparatus according to claim 3, satisfying a relationship of XG1 = XG2 = YG1. 前記複数の半導体素子のそれぞれが、前記放射線が入射する面に垂直な一の面に（ｎ−１）個の溝を有すると共に、前記複数の溝間、及び前記一の面の反対側の面に電極を有することにより、ｎ個の前記素子内ピクセル領域が構成される請求項４に記載の放射線検出装置。 Each of the plurality of semiconductor elements has (n−1) grooves on one surface perpendicular to the surface on which the radiation is incident, and the surface between the plurality of grooves and the surface opposite to the one surface. The radiation detection apparatus according to claim 4, wherein n pixel regions in the element are configured by having electrodes in the electrode. 前記複数の半導体素子のそれぞれが、前記基板の一方の面及び他方の面に、前記基板を対称面として設けられる請求項５に記載の放射線検出装置。 The radiation detection apparatus according to claim 5, wherein each of the plurality of semiconductor elements is provided on one surface and the other surface of the substrate with the substrate as a symmetrical surface.
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