JP5658488B2 - 改善された音響性能を有する超音波トランスデューサ - Google Patents
改善された音響性能を有する超音波トランスデューサ Download PDFInfo
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- JP5658488B2 JP5658488B2 JP2010131565A JP2010131565A JP5658488B2 JP 5658488 B2 JP5658488 B2 JP 5658488B2 JP 2010131565 A JP2010131565 A JP 2010131565A JP 2010131565 A JP2010131565 A JP 2010131565A JP 5658488 B2 JP5658488 B2 JP 5658488B2
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Classifications
-
- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/002—Devices for damping, suppressing, obstructing or conducting sound in acoustic devices
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/48—Diagnostic techniques
- A61B8/483—Diagnostic techniques involving the acquisition of a 3D volume of data
Description
102 送波器
104 素子のアレイ
106 超音波トランスデューサ
108 受波器
110 ビームフォーミング電子回路
112 RFプロセッサ
114、122 メモリ
116 プロセッサ・モジュール
118 表示器
124 ユーザ・インタフェイス
130 3D対応小型超音波システム
132 トランスデューサ
134 ユーザ・インタフェイス
136 一体型表示器
138 外部装置
140 有線網又は無線網
142 トランスデューサ・アセンブリ
144 トランスデューサ素子のアレイ
145 所望の素子間間隔又はピッチ
146 音響層
148 第一のマッチング層
150 第二のマッチング層
151 導電性薄膜
152 デマッチング層
154 介在層
156 集積回路
158 基材
160 伝導性素子
161 相互接続パッド
162、172、186 介在層
163 損失性バッキング層
164、174 基材
166、180、194 ビア
168、182、198 充填材
170、184 接続パッド
176 金属シート
178 穿孔
188、190、192 基材層
196 金属相互接続
204 介在層
206 基材
208 ビア
210 充填材
212 接続パッド
216 音響層
218 第一のマッチング層
220 第二のマッチング層
222 デマッチング層
224 ダイス切断前の音響積層体
226 基材
230 鋸切り溝
232 トランスデューサ素子
236 切り溝充填材
240 ビームフォーミング電子回路
241 損失性バッキング層
242 相互接続パッド
250 介在層
252 第一の接続領域
254 第二の接続領域
256 トランスデューサ素子
258 ビームフォーミング電子回路
260 第一の群の相互接続パッド
262 第二の群の相互接続パッド
264 有機基材
266 第一の層
268 第二の層
270 ビア
272 充填材
274 パッド接続部
276 単層ビア
278 電気的接地
280 デマッチング層
Claims (10)
- 音響素子のアレイを有する音響層(146)と、
該音響層(146)に結合されており該音響層の音響インピーダンスよりも高い音響インピーダンスを有するデマッチング層(152)と、
該デマッチング層(152)に結合されており、複数のビア(166)を有する非導電性の基材(158)及び前記複数のビア(166)に配置された導電性経路を備える複数の伝導性素子(160)を含んでいる介在層(154)であって、前記デマッチング層(152)の前記音響インピーダンスよりも低い音響インピーダンスを有する介在層(154)と、
該介在層(154)に結合されており前記デマッチング層(152)及び前記介在層(154)を通して前記音響素子のアレイ(146)に電気的に接続されている集積回路(156)と
を備え、
前記導電性経路(160)は、
前記複数のビア(166)の各々を通して延在している導電性の金属相互接続(196)と、
各々の金属相互接続(196)を覆って前記複数のビア(166)の各々の残部に充填された非導電性充填材料(198)と
を含んでいる、
超音波トランスデューサ(106)。 - 前記音響層(146)の上面に配設された第1のマッチング層(148)と、
前記第1のマッチング層(148)の上面に配設された第二のマッチング層(150)と、
前記第二のマッチング層(150)の底面に配置された導電性薄膜(151)と、
を含んでいる、請求項1に記載の超音波トランスデューサ(106)。 - 前記基材(158)及び前記導電性経路(160)の各々が、約10MRayl未満の音響インピーダンスを有している、請求項1または2に記載の超音波トランスデューサ(106)。
- 前記導電性経路(160)は、前記複数のビア(166)の各々に充填された銀エポキシ(182)を含んでいる、請求項1乃至3のいずれかに記載の超音波トランスデューサ(106)。
- 前記非導電性充填材料(198)は、非導電性エポキシ(198)である、請求項1乃至4のいずれかに記載の超音波トランスデューサ(106)。
- 前記介在層(154)は、前記基材(158)に埋め込まれて複数の穿孔(178)を形成されて有する金属芯材(176)をさらに含んでおり、
前記複数のビア(166)は、前記複数の穿孔(178)の少なくとも一部を通して延在している、請求項1乃至5のいずれかに記載の超音波トランスデューサ(106)。 - 前記介在層(154)は、
前記集積回路(156)を前記音響素子のアレイ(146)に電気的に接続するように構成されており、前記複数のビア(166)を形成されて有する第一の接続領域(252)と、
信号入出力接続、電力及び制御接続、並びに接地及び二重電力接続の少なくとも一つを含むシステム接続に前記集積回路(156)を電気的に接続するように構成されている第二の接続領域(254)とを含んでいる、請求項1乃至5のいずれかに記載の超音波トランスデューサ(106)。 - 前記第二の接続領域(254)は、パッド接続、トレース接続、エポキシ充填単層ビア、及びエポキシ充填貫通ビアの少なくとも一つを含んでいる、請求項7に記載の超音波トランスデューサ(106)。
- 前記基材(158)に形成された前記複数のビア(166)のピッチが、前記音響素子のアレイ(146)のピッチに合致している、請求項1乃至8のいずれかに記載の超音波トランスデューサ(106)。
- 前記介在層(154)の反対側で前記集積回路(156)の背面に結合された損失性バッキング層(163)をさらに含んでいる請求項1乃至9のいずれかに記載の超音波トランスデューサ(106)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/485,226 | 2009-06-16 | ||
US12/485,226 US8207652B2 (en) | 2009-06-16 | 2009-06-16 | Ultrasound transducer with improved acoustic performance |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011004395A JP2011004395A (ja) | 2011-01-06 |
JP2011004395A5 JP2011004395A5 (ja) | 2013-07-18 |
JP5658488B2 true JP5658488B2 (ja) | 2015-01-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010131565A Active JP5658488B2 (ja) | 2009-06-16 | 2010-06-09 | 改善された音響性能を有する超音波トランスデューサ |
Country Status (3)
Country | Link |
---|---|
US (1) | US8207652B2 (ja) |
JP (1) | JP5658488B2 (ja) |
FR (1) | FR2946785B1 (ja) |
Cited By (1)
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KR102658983B1 (ko) | 2017-12-21 | 2024-04-18 | 제네럴 일렉트릭 컴퍼니 | 초음파 변환기 및 초음파 프로브 제조 방법 |
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US8207652B2 (en) | 2012-06-26 |
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