JP5653756B2 - 薄膜電池の大量製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 239000010409 thin film Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 64
- 238000000059 patterning Methods 0.000 claims description 59
- 238000000151 deposition Methods 0.000 claims description 43
- 230000008569 process Effects 0.000 claims description 34
- 230000008021 deposition Effects 0.000 claims description 31
- 239000011253 protective coating Substances 0.000 claims description 29
- 239000003792 electrolyte Substances 0.000 claims description 18
- 238000000206 photolithography Methods 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000003801 milling Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 98
- 230000000873 masking effect Effects 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 16
- 230000008901 benefit Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 238000003475 lamination Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910001416 lithium ion Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018119 Li 3 PO 4 Inorganic materials 0.000 description 1
- 229910006270 Li—Li Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/058—Construction or manufacture
- H01M10/0585—Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/04—Construction or manufacture in general
- H01M10/0436—Small-sized flat cells or batteries for portable equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
- H01M4/0423—Physical vapour deposition
- H01M4/0426—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/40—Printed batteries, e.g. thin film batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M2300/00—Electrolytes
- H01M2300/0017—Non-aqueous electrolytes
- H01M2300/0065—Solid electrolytes
- H01M2300/0068—Solid electrolytes inorganic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
Claims (12)
- 薄膜電池を製造する方法であって、
基板を準備するステップと、
前記基板上に薄膜電池構造に対応する層を堆積させるステップであって、前記層が、堆積順に、カソードと、電解質と、アノードとを含み、ここで、前記堆積された層の少なくとも1つが、堆積中、物理的マスクによってパターン形成されていない、前記ステップと、
保護コーティングを堆積させるステップと、
前記層と前記保護コーティングとを、1つ以上のマスクレス(maskless)物理的パターニングプロセスを用いてパターン形成するステップと、
を含み、前記保護コーティングが、アノード電流コレクタとしても機能し、Ag、Al、Au、Ca、Cu、Sn、Pd、Zn、Ptの少なくともいずれか一つを含む、前記方法。 - 前記基板が、カソード電流コレクタとしても機能する、請求項1に記載の方法。
- 前記1つ以上のマスクレス(maskless)物理的パターニングプロセスが、レーザスクライビング、機械的ソーイング、水/溶媒ナイフィング、イオンビームミリング、及びフォトリソグラフィからなる群より選ばれる、請求項1に記載の方法。
- 前記1つ以上のマスクレス(maskless)物理的パターニングプロセスを用いることによって、前記層の全てが平行であり且つ同じ広がり(co-extensive)を持っている、請求項1に記載の方法。
- 前記パターン形成後、前記層のさらされたエッジ部を封入するステップを更に含む、請求項1に記載の方法。
- 薄膜電池を製造する方法であって、
第1の基板を準備するステップと、
前記第1の基板上に第1組の層を堆積させるステップと、
第2の基板を準備するステップと、
前記第2の基板上に第2組の層を堆積させるステップと、
前記第1組の層と前記第2組の層とを積層させるステップと、
積層した構造をスクライブするステップと、
を含み、前記積層した第1組の層と第2組の層とが、カソードと、電解質と、アノードとを含む薄膜電池構造に対応し、且つ前記第1組の層と第2組の層の少なくとも1つの層が、堆積中、物理的マスクによってパターン形成されておらず、前記第2の基板が、保護コーティングとしても機能し、Ag、Al、Au、Ca、Cu、Sn、Pd、Zn、Ptの少なくともいずれか一つを含む、前記方法。 - 前記積層した構造をスクライブすることによって、前記第1組の層と第2組の層における層の全てが平行であり且つ同じ広がりを持っている、請求項6に記載の方法。
- 前記スクライブするステップが、レーザスクライブするステップである、請求項6に記載の方法。
- 前記スクライブした後、連続して堆積された層のさらされたエッジ部を封入するステップを更に含む、請求項6に記載の方法。
- 前記スクライブするステップが、マスクレス(maskless)物理的パターニングプロセスを用いて、該第1組の層、該第2組の層、該積層した構造の少なくとも1つをパターン形成するステップを更に含む、請求項8に記載の方法。
- 第1の基板と、
前記第1の基板に取り付けられた薄膜電池構造に対応する一組の層であって、前記一組の層が、前記第1の基板から順に、カソードと、電解質と、アノードと、保護コーティングとを含み、ここで、前記層の少なくとも1つが物理的マスクによってパターン形成されていない、前記一組の層と、
前記一組の層を覆う保護コーティングと、
前記層のエッジ部を覆う封入層と、
を備え、前記保護コーティングが、アノード電流コレクタとしても機能し、Ag、Al、Au、Ca、Cu、Sn、Pd、Zn、Ptの少なくともいずれか一つを含む、薄膜電池。 - 前記一組の層をスクライブすることによって、前記層の全てが平行であり且つ同じ広がりを持っている、請求項11に記載の薄膜電池。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US98266907P | 2007-10-25 | 2007-10-25 | |
US60/982,669 | 2007-10-25 | ||
PCT/US2008/080884 WO2009055529A1 (en) | 2007-10-25 | 2008-10-23 | Method for high volume manufacturing of thin film batteries |
Publications (2)
Publication Number | Publication Date |
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JP2011501388A JP2011501388A (ja) | 2011-01-06 |
JP5653756B2 true JP5653756B2 (ja) | 2015-01-14 |
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JP2010531224A Active JP5653756B2 (ja) | 2007-10-25 | 2008-10-23 | 薄膜電池の大量製造方法 |
Country Status (7)
Country | Link |
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US (2) | US8168318B2 (ja) |
EP (1) | EP2212962B1 (ja) |
JP (1) | JP5653756B2 (ja) |
KR (2) | KR101773498B1 (ja) |
CN (2) | CN101855770A (ja) |
TW (1) | TWI396315B (ja) |
WO (1) | WO2009055529A1 (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2021531627A (ja) * | 2018-07-20 | 2021-11-18 | ダイソン・テクノロジー・リミテッド | エネルギー貯蔵デバイス |
JP7154376B2 (ja) | 2018-07-20 | 2022-10-17 | ダイソン・テクノロジー・リミテッド | エネルギー貯蔵デバイス |
Also Published As
Publication number | Publication date |
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US20120214047A1 (en) | 2012-08-23 |
JP2011501388A (ja) | 2011-01-06 |
EP2212962A4 (en) | 2012-12-05 |
EP2212962A1 (en) | 2010-08-04 |
KR101773498B1 (ko) | 2017-09-01 |
US20090148764A1 (en) | 2009-06-11 |
KR101587954B1 (ko) | 2016-01-22 |
US8168318B2 (en) | 2012-05-01 |
KR20100083172A (ko) | 2010-07-21 |
EP2212962B1 (en) | 2017-07-26 |
TW200935640A (en) | 2009-08-16 |
TWI396315B (zh) | 2013-05-11 |
KR20160024927A (ko) | 2016-03-07 |
CN105789654A (zh) | 2016-07-20 |
CN101855770A (zh) | 2010-10-06 |
WO2009055529A1 (en) | 2009-04-30 |
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