JP5640760B2 - Test probe card, test apparatus, and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a test probe card, a test apparatus, and a method for manufacturing a semiconductor device.

  A plurality of semiconductor devices are formed adjacent to each other on a semiconductor wafer, and then divided into chips, and further used by being covered with a package such as a mold. Various tests such as a contact test and a leak test of a semiconductor device are performed not only after being divided into chips but also in a wafer state before division.

  The electrical characteristics of the semiconductor element and the semiconductor integrated circuit in each semiconductor device in the wafer state are tested by, for example, a test apparatus provided with a probe card. The probe card includes a probe needle that connects the tip to a plurality of electrode pads on the surface of the semiconductor device, a probe needle support portion that supports the probe needle, and a substrate that has wiring connected to the probe needle. The probe needle is electrically connected to the tester via a tester head or the like.

  As electronic devices have higher functions and higher performance, semiconductor devices mounted therein are required to have higher integration, higher speed, and larger capacity. With the realization of such a demand, the number of electrode pads which are external connection terminals is increased in the semiconductor device, and the distance between the electrode pads is further narrowed.

In the test apparatus for testing an electrode pad having a large number of semiconductor devices, have a number of probes matched to the external terminals of the semi-conductor device, smaller probe spacing so that number increases with the increase of the external connection terminal Become.

  When testing a semiconductor device, the probe needle is pressed and brought into contact with the electrode pad of the semiconductor device, so that the tip of the probe needle moves on the electrode pad by its own elasticity and scrapes the constituent metal on the surface of the electrode pad. take. The scraped metal scraps adhere to the probe needle and cause a poor electrical contact between the probe needle and the electrode pad. Further, since the metal dust attached to the needle tip also moves due to the sliding of the probe tip of the probe needle, scratches due to the movement of the metal dust may be formed on the outer periphery of the electrode pad, resulting in poor appearance.

  In order to solve such a defect, a probe needle having one or more recesses extending obliquely rearward from the distal end side of the needle tip portion and reaching the rear side of the needle tip portion is known. According to such a probe needle, scraping scraps adhering to the needle tip portion are received in the recess of the needle tip portion.

JP 11-38040 A

  In the test apparatus, the tip of the probe needle gradually wears as the number of uses increases. As the wear of the tip of the needle tip progresses, the area of the tip of the substantially conical needle tip increases, while the recess of the probe needle extending obliquely rearward as described above, that is, the tip region of the groove becomes narrower. The intended function of the recess can no longer be maintained. Furthermore, when bending the needle tip, it is difficult to position the recess behind the needle tip.

  An object of the present invention is to provide a test probe card including a probe needle that optimizes a groove formed in the needle tip, a test apparatus that suppresses damage to a test object for a long time, and damage caused by use of the test probe needle. An object of the present invention is to provide a method for manufacturing a semiconductor device to prevent.

According to one aspect of the embodiment, the body includes a body portion, a bent portion, and a needle tip portion, and extends in a length direction of the needle tip portion from a rear side of an outer peripheral portion at a tip end of the needle tip portion. a probe including a first groove reaching the inner parts, have a, a substrate supporting the probe needles, the first groove, increasing depth toward the bent portion from the needle tip portion A test probe card is provided.
According to another aspect of the embodiment, the bent portion has a main body portion, a bent portion, and a needle tip portion, and extends in the length direction of the needle tip portion from the rear side of the outer peripheral portion at the tip of the needle tip portion. the reached inside, and the probe needle including the needle point portion and the depth toward the bent portion increases the groove from a probe card and a substrate for supporting the probe needles, the test signal to the probe card And a control unit that transmits and receives the data.
According to still another aspect of the embodiment, the bent portion is attached to a probe card of a test apparatus, has a main body portion, a bent portion, and a needle tip portion, and the bent portion from the rear side of the outer peripheral portion at the tip of the needle tip portion. A step of applying the tip of the probe needle including a groove reaching the inside of the electrode to an electrode pad of a semiconductor device, a step of sliding the tip of the needle tip portion on the surface of the electrode pad, and the electrode pad through the probe needle and testing the test signal by transmitting and receiving, it has a, the groove, the method of manufacturing a semiconductor device depth increases toward the bent portion from the needle tip portion is provided.
The objects and advantages of the embodiments will be realized and attained by means of the elements and combinations particularly pointed out in the claims. Further, it is understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not intended to limit the invention.

  According to this embodiment, a groove having a length reaching the inside of the bent portion is formed on the back side of the tip of the bent needle tip portion of the probe needle. Thereby, even if the tip of the needle tip is worn and the needle tip is shortened, the groove at the tip of the needle tip does not disappear. Further, when the probe needle is bent with a part of the groove as a fulcrum, the groove is positioned inside the bent portion, so that it is easy to position the groove behind the tip of the needle tip portion.

FIG. 1 is a side view of a test apparatus according to an embodiment. 2A is a bottom view showing an example of a probe card attached to the test apparatus according to the embodiment, and FIG. 2B is a side view showing a central portion and a peripheral portion of the probe card attached to the test apparatus according to the embodiment. is there. FIG. 3A is a plan view showing a semiconductor wafer, and FIG. 3B is a plan view showing a semiconductor device formed on the semiconductor wafer. FIG. 4 is a perspective view showing a part of the probe needle used in the test apparatus according to the embodiment from the bottom surface side. 5A to 5C are side views showing a probe needle forming process used in the test apparatus according to the embodiment. 6A is a bottom view showing a state after the tip of the probe needle used in the test apparatus according to the embodiment slides on the pad surface, and FIG. 6B is a perspective view showing a state where the tip of the probe needle slides on the pad surface. It is. FIG. 7 is a perspective view showing the state after cleaning of the tip of the probe needle used in the test apparatus according to the embodiment from the bottom surface side. FIG. 8 is a perspective view illustrating another example of the needle tip portion and the bent portion of the probe needle used in the test apparatus according to the embodiment from the bottom surface side. FIG. 9 is a perspective view showing still another example of the needle tip portion and the bent portion of the probe needle used in the test apparatus according to the embodiment from the bottom surface side.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In the drawings, similar components are given the same reference numerals.

  FIG. 1 is a side view showing an outline of a test apparatus for executing a semiconductor device test method according to an embodiment of the present invention, and FIGS. 2A and 2B are bottom views showing a probe card used in the test apparatus shown in FIG. It is a side view which shows a figure and its one part.

  The apparatus shown in FIG. 1 is a test apparatus for testing electrical characteristics of a plurality of semiconductor devices 2 formed vertically and horizontally adjacent to the surface of the semiconductor wafer 1 shown in FIG. 3A, for example, a silicon wafer. And a wafer prober 11. Note that an active element (not shown) such as a transistor, a passive element (not shown) such as a wiring, and other semiconductor circuits are formed in the semiconductor device 2, and the external surface as shown in FIG. The connection terminal, for example, the electrode pad 2a is exposed.

  A wafer stage 13 is disposed in the housing 12 of the wafer prober 11, and a wafer chuck 14 is attached on the wafer stage 13. The wafer stage 13 has a structure capable of moving the wafer chuck 14 in the vertical direction, the front-rear direction, and the left-right direction and further rotating in the horizontal direction. Note that a heater for adjusting the temperature of the semiconductor wafer 1 is built in the wafer stage 13.

  An opening 12a is provided above the wafer stage 13 in the housing 12, and a head plate 15 is attached to the opening 12a so as to be opened and closed. A flock ring 16 is fitted in the opening 15 a at the center of the head plate 15.

A clamp 20 is attached to the lower surface of the head plate 15. In the center of the clamp 20, opening fitting the card folder 19 under the flock ring 16 is formed.

  On the card folder 19, a probe card 3 having probe needles 4 that are in contact with the electrode pads 2 a of the semiconductor device 2 formed on the semiconductor wafer 1 is attached. The probe needle 4 is projected toward the wafer stage 13 through the central opening 19 a of the card folder 19.

  On the flock ring 16, a tester head 23 having a performance board 21 electrically connected to the conductive pins 16 a of the frog ring 16 is attached. The tester head 23 has a plurality of drivers, comparators, contact pins and the like (not shown) therein, and the contact pins are electrically connected to contact pins (not shown) of the performance board 21.

  The tester head 23 is connected to the control unit 10 via a cable 24 having a signal line. The control unit 10 includes, for example, a CPU, a storage device, an operation unit, and the like, and has a computer that operates according to a program that incorporates a series of test processes, and generates signals used for electrical characteristic tests. A test system related to analysis has been established. That is, various test items relating to the electrical characteristic test are described as the test system, and the electrical characteristic test of the semiconductor device 2 is executed via the signal transmission system according to the program.

Thereby, the control unit 10 is in a state of being electrically connected to the electrode pad 2a of the semiconductor device 2 through the tester head 23, the performance board 21, the frog ring 16, the probe card 3, the probe needle 4, and the like. . The tester head 23 transmits a test voltage, a test signal, and the like to the semiconductor device 2 and receives a measurement signal and a test from the semiconductor device 2. The measurement result is recorded in a storage device in the control unit 10.

  As shown in FIGS. 2A and 2B, the probe card 3 has a printed circuit board 3a on which probe connection pads 3e, electrode pads 3f, internal wiring (not shown) and the like are formed. Further, a reinforcing plate 3g is attached to the central region of the upper surface of the printed circuit board 3a in order to increase the mechanical strength. A ceramic ring 3b is attached to the lower surface of the printed circuit board 3a, and a probe support portion 3c is attached to the lower surface of the ceramic ring 3b.

  The probe support portion 3c is formed in a ring shape from a resin such as epoxy resin, for example, and an opening 3d is formed in the center thereof. The probe support portion 3c supports a plurality of conductive probe needles 4 arranged side by side along the periphery of the opening 3d. The planar shape of the probe support portion 3c is not limited to a square.

  The probe needle 4 is made of metal, and has a substantially L-shaped bent portion 4c that bends the needle tip portion 4a with respect to the needle main body portion 4d, as illustrated in FIG. Further, in the longitudinal direction of the probe needle 4, a linear groove 4 b is formed that reaches from the rear side around the tip of the needle tip portion 4 a to the inner side portion (rear side portion) of the bent portion 4 c.

  The probe needle 4 is supported by the probe support portion 3 c of the probe card 3. In this case, the plurality of needle tips 4a protrudes inward from the opening 3d of the probe support 3c, and the rear end protrudes outward from the outer periphery of the probe support 3c. The tips of the probe tip portions 4a of the plurality of probe needles 4 are adjusted in position so that they can simultaneously contact the electrode pads 2a of the semiconductor device 2.

  The rear end portion of the probe needle 4 is connected and fixed to a wiring pad 3e formed on the lower surface of the printed circuit board 3a by, for example, solder. Thereby, the rear end portion of the probe needle 4 is electrically connected to the electrode pad 3f on the upper surface of the printed circuit board 3a via wiring, vias, etc. (not shown) formed on the printed circuit board 3a. Further, the electrode pad 3 f on the upper surface of the probe card 3 is electrically connected to the tester head 23 via the conductive pin 16 a protruding from the lower surface of the frog ring 16.

Next, a method for forming the probe needle 4 will be described with reference to FIGS. 5A to 5C.
First, as shown in FIG. 5A, a wire 40 having a tapered conical tip portion 4a formed from a metal such as tungsten, a platinum group metal alloy, or beryllium copper is formed. The needle-like conductor 40 has a length of 50 mm to 100 mm, for example, and has a diameter of several tens of μm to several hundreds of μm at a thick portion. The needle tip portion 4a is processed, for example, by polishing, and is thereby formed into a tapered cone shape toward the tip of the needle tip portion 4a. The tip of the needle tip portion 4a has a diameter of 10 μm to 70 μm, for example.

  Next, as shown to FIG. 5B, the substantially linear groove | channel 4b is formed toward the area | region which reaches the formation location of the bending part 4c from the front-end | tip of the needle point part 4a. As a method of forming the groove 4b, for example, a method of irradiating the needle-shaped conductor 40 with a laser, or after forming a resist mask having a groove-shaped opening on the needle-shaped conductor 40, the needle-shaped conductor 40 is etched through the opening. There is a way to do it.

The width of the groove 4b formed in the needle-shaped conductor 40 is not particularly limited. For example, the groove 4b is formed to have a tapered tip of about several μm, and has the same thickness in the longitudinal direction from the tip to the rear end. Or it has the thickness which spreads continuously or in steps toward the rear end. The depth of the groove 4b preferably has a size that increases continuously or stepwise from the front end to the rear end of the needle-like conductor 40 as shown by being surrounded by a broken line in FIG. 5B, but is constant. May be.

  Next, as shown in FIG. 5C, for example, the groove 4b is bent at the bent portion forming position located 200 μm to 1600 μm from the tapered tip of the needle-like conductor 40. Thereby, the part from the front-end | tip of the needle-shaped conductor 40 to a bending location becomes the needle tip part 4a, Furthermore, a bending location becomes the bending part 4c, and the probe needle 4 is formed. The bending angle, that is, the bending angle θ of the bent portion 4c is set to 90 ° to 110 °, for example. In addition, the bending location of the probe needle 4 may be provided in a portion other than determining the needle tip portion 4a.

  When the needle-like conductor 40 is bent, a compressive strain is applied in the bending direction, but the strain is absorbed by the groove 4b. Therefore, by positioning the groove 4b on the inner side of the bent portion 4c, the sectional moment of inertia of the bent portion of the needle-like conductor 40 is lowered, and the bending process is facilitated. Thus, the length of the probe needle 4, the bending angle θ, the taper angle of the needle tip portion 4a, and the like can be freely controlled, and high-precision machining close to the design value is possible. In this case, the groove 4b is located on the rear side around the tip of the needle tip portion 4a.

  The probe needle 4 is attached to the probe support portion 3c of the probe card 3 so that the needle tip portion 4a is inclined backward with respect to the vertical direction of the upper surface of the semiconductor wafer 1 at an angle of, for example, 2 ° to 6 °. Supported.

  In the probe card 3 to which the probe needle 4 is attached, an opening 3h is formed in the central region of the ceramic ring 3b, the printed board 3a thereon, and the reinforcing plate 3g. As a result, the needle tip portion 4a of the probe needle 4 and the upper surface of the semiconductor device 2 disposed thereunder can be observed from the upper surface of the probe card 3 through the opening 3h.

  When testing the semiconductor device 2 of the semiconductor wafer 1 using the test apparatus 11, the probe card 3 is mounted on the card folder 19, and the probe card 3 is electrically connected to the flock ring 16 and the tester head 23. Set to state. And the opening part 12a of the housing | casing 12 is closed with the headplate 15 to which the card folder 19 was attached.

  After the semiconductor wafer 1 is automatically transferred onto the wafer stage 13 and placed on the wafer chuck 14, the position of the semiconductor wafer 1 is adjusted by the wafer stage 13, and the wafer stage 13 is further raised. Thereby, the tip of the probe tip 4 a of the probe needle 4 is applied to each of the electrode pads 2 a of the semiconductor device 2 of the semiconductor wafer 1. Thereafter, the characteristics of the semiconductor device 2 are tested, such as checking the electrical operation of the semiconductor device 2 by applying a test voltage signal from the control unit 10 and determining the quality of the die. By repeating such an operation, a plurality of semiconductor devices 2 are tested.

  In order to electrically connect the probe needle 4 to the electrode pad 2a, first, the probe needle 4 is brought into close contact with the electrode pad 2a. Subsequently, the probe needle 4 is pressed against the electrode pad 2a until the probe needle 4 moves in a circular arc and is slightly displaced. Thereby, the tip of the needle tip portion 4a of the probe needle 4 slides forward. In this case, the groove 4b is in a state formed on the side opposite to the sliding direction of the needle tip portion 4a.

  The upward displacement amount of the needle tip portion 4a is referred to as a slip amount, and the vertical displacement amount of the needle tip portion 4a is referred to as an overdrive amount. During the sliding, the tip of the needle tip portion 4a and the electrode pad 2a are rubbed, and the tip of the needle tip portion 4a scrapes off the metal plating surface layer of the electrode pad 2a to expose a new surface. Thereby, the contact between the electrode pad 2a and the tip of the probe needle 4 is improved, and stable electrical contact is achieved.

  When the electrical test of the semiconductor device 2 is completed by the control signal from the control unit 10, the wafer stage 13 is moved to move the probe needle 4 away from the semiconductor device 2. In this case, the probe needle 4 returns to its original state by an arc motion due to its own elasticity.

  The tip of the needle tip portion 4a of the probe needle 4 scrapes off the metal plating layer on the surface of the electrode pad 2a when sliding on the electrode pad 2a. Furthermore, as shown in the bottom view of FIG. 6A and the perspective view of FIG. It is. Thereby, since the protrusion of the scrap S from the surface of the needle tip portion 4a is suppressed, damage caused by the protrusion of the scrap S to the periphery of the electrode pad 2a is prevented, and further, the electrical contact failure through the scrap S is prevented. Is done.

  After the test of the semiconductor device 2 is completed as described above, the needle tip 4a of the probe needle 4 is applied to a cleaner (not shown) attached on the wafer stage 13 as necessary to clean the needle tip 4a.

  As the cleaner, for example, a paper-like abrasive sheet in which an abrasive is applied on a substrate is used. When cleaning the needle tip portion 4a of the probe needle 4, the wafer stage 13 is moved in the horizontal direction with the tip of the needle tip portion 4a applied to the polishing sheet. As a result, the scrap S at the tip of the needle tip portion 4a is removed, and at the same time, the tip of the needle tip portion 4a is worn and a new surface appears. At the same time, as shown in FIG. Shortens at T.

  The needle tip portion 4a of the probe needle 4 is worn and gradually shortened by repeated cleaning or sliding on the electrode pad 2a. However, since the groove 4b extends to the bent portion 4c, the worn needle tip portion 4a. The tip of each maintains the shape having the groove 4b. As a result, the function of trapping scraps S by the grooves 4b is maintained until the life of the probe needle 4 is reached.

  Since the needle tip portion 4a of the probe needle 4 has a substantially conical shape, as the tip of the needle tip portion 4a wears, the area of the tip surface increases. Thereby, there exists a possibility that the amount of scraping scrapes of the surface layer of the electrode pad 2a by the needle tip part 4a may increase.

  As a countermeasure, scraping off by adopting a shape in which the depth of the groove 4b is increased from the tip of the needle tip portion 4a toward the bent portion 4c as shown in the enlarged view surrounded by the broken line in FIG. 5B. As the amount increases, the area of the groove 4b on the tip surface of the needle tip portion 4a also increases. Thereby, since the accommodation amount of the scraping scraps S by the groove 4b increases, an increase in the protruding amount of the scraping scraps S adhering to the needle tip portion 4a from the needle tip portion 4a is suppressed.

  By the way, the groove 4a formed in the probe needle 4 is not only formed in the portion reaching the inside of the bent portion 4c from the rear side of the outer periphery of the tip end of the needle tip portion 4a, but as illustrated in FIGS. , And may be formed along other portions.

  Another groove 4e shown in FIG. 8 is formed on the front side of the outer periphery of the tip of the needle tip portion 4a from the outside of the bent portion 4c. Further, another groove 4f shown in FIG. 9 is formed along the longitudinal direction at a plurality of locations around the needle tip of the needle tip portion 4a. As shown in FIGS. 8 and 9, the grooves 4e and 4f formed in a portion other than the rear portion around the needle tip portion 4a may have a length reaching the bent portion 4c from the tip of the needle tip portion 4a. However, the length may not be reached.

  At the tip of the needle tip portion 4a, scraping scraps on the surface of the electrode pad 2a of the semiconductor device 2 increase. Ability improves.

  By providing grooves 4b, 4e and 4f along the longitudinal direction in the probe needle 4, in addition to taking up scraps S, the surface area of the probe needle 4 is increased, so that when the probe needle 4 contacts the semiconductor wafer 1, the probe The heat exchange efficiency between the needle 4 and its surroundings is increased.

  As a result, the temperature difference between the semiconductor wafer 1 and the probe needle 4 whose temperature has been adjusted by a heater or the like in the wafer stage 13 is reduced in a shorter time than before. By shortening the time to reach the measurement temperature of the probe needle 4, it is possible to minimize the temperature adjustment variation in the position of the probe needle 4 immediately after the start of the test and thereafter.

The semiconductor device 2 has no problem finishing tests such as above, by the division of the semiconductor wafer 1 is formed into chips Una by you illustrated in Figure 3B, it is further packaged.

  All examples and conditional expressions given here are intended to help the reader understand the inventions and concepts that have contributed to the promotion of technology, such examples and It should be construed without being limited to the conditions, and the organization of such examples in the specification is not related to showing the superiority or inferiority of the present invention. While embodiments of the present invention have been described in detail, it will be understood that various changes, substitutions and variations can be made thereto without departing from the spirit and scope of the invention.

Next, features of the embodiment of the present invention will be described.
(Additional remark 1) It has a main-body part, a bending part, and a needle-tip part, it extends in the length direction of the needle-tip part from the rear side of the outer peripheral part of the front-end | tip of the said needle-tip part, and reaches the inner side of the said bending part. A test probe card having a probe needle including one groove and a substrate that supports the probe needle.
(Appendix 2) At least one second groove that is formed to extend from the outer peripheral portion of the tip of the needle tip portion in the length direction of the needle tip portion and that is adjacent to the first groove with an interval. The test probe card according to Supplementary Note 1.
(Supplementary Note 3) A groove having a main body portion, a bent portion, and a needle tip portion, extending from the rear side of the outer peripheral portion at the tip of the needle tip portion in the length direction of the needle tip portion and reaching the inside of the bent portion. A test apparatus comprising: a probe card including a probe needle including: a probe card having a substrate that supports the probe needle; and a control unit that transmits and receives a test signal to and from the probe card.
(Appendix 4) At least one second groove that is formed to extend from the outer peripheral portion of the tip of the needle tip portion in the length direction of the needle tip portion and that is adjacent to the first groove with an interval. The test apparatus according to Supplementary Note 3.
(Additional remark 5) The said 1st groove | channel is a test apparatus of Additional remark 3 or Additional remark 4 which has the same depth from the said edge part of the said needle-tip part to the inner side of the said bending part.
(Additional remark 6) The said 1st groove | channel is a test apparatus of Additional remark 3 or Additional remark 4 which is increasing the depth from the said edge part of the said needle-tip part to the inner side of the said bending part.
(Appendix 7)
The probe needle is attached to a probe card of a test apparatus, has a main body portion, a bent portion, and a needle tip portion, and includes a groove reaching the inside of the bent portion from the rear side of the outer peripheral portion of the tip of the needle tip portion. A step of applying a tip to an electrode pad of a semiconductor device, a step of sliding the tip of the needle tip portion onto the surface of the electrode pad, a step of transmitting and receiving a test signal to the electrode pad through the probe needle, and a test, A method for manufacturing a semiconductor device comprising:
(Additional remark 8) The manufacturing method of the semiconductor device of Additional remark 7 which has the process of cleaning the said front-end | tip by grinding | polishing, before contacting the said front-end | tip of the said needle-tip part to the said electrode pad.
(Additional remark 9) The manufacturing method of the semiconductor device of Additional remark 7 which has the process of forming the said semiconductor device in a chip shape, after separating the said needle-tip part from the said electrode pad.

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Semiconductor device 2a Electrode pad 3 Probe card 3a Printed circuit board 4 Probe needle 4a Needle tip part 4b, 4e, 4f Groove 4c Bending part 4d Needle main-body part 10 Control part 11 Wafer prober 13 Wafer stage

Claims (5)

A first groove having a main body portion, a bent portion, and a needle tip portion, extending from the rear side of the outer peripheral portion of the tip of the needle tip portion in the length direction of the needle tip portion and reaching the inside of the bent portion; Including a probe needle,
A substrate for supporting the probe needle;
I have a,
The depth of the first groove increases from the needle tip portion toward the bent portion .   2. The needle tip portion has at least one second groove formed to extend from the outer peripheral portion of the tip of the needle tip portion in the length direction of the needle tip portion and adjacent to the first groove with a space therebetween. The test probe card according to 1. And a and the bent portion and the tip portion main body, reached inside the bent portion from the rear side of the outer peripheral portion of the distal end of said probe tip portion extends in the lengthwise direction of the probe tip portion, said probe tip portion A probe card including a probe needle including a groove whose depth increases toward the bent portion, and a substrate that supports the probe needle;
A control unit for transmitting and receiving a test signal to and from the probe card;
Including test equipment. The probe needle is attached to a probe card of a test apparatus, has a main body portion, a bent portion, and a needle tip portion, and includes a groove reaching the inside of the bent portion from the rear side of the outer peripheral portion of the tip of the needle tip portion. Applying the tip to the electrode pad of the semiconductor device;
Sliding the tip of the needle tip onto the surface of the electrode pad;
Transmitting and receiving a test signal to and from the electrode pad through the probe needle; and
I have a,
The method for manufacturing a semiconductor device, wherein the groove has a depth that increases from the needle tip portion toward the bent portion . The method of manufacturing a semiconductor device according to claim 4, further comprising a step of cleaning the tip by polishing before the tip of the needle tip portion is applied to the electrode pad.

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