JP5634403B2 - ２つ以上の動作状態を有するマイクロリソグラフィ投影露光装置 - Google Patents

２つ以上の動作状態を有するマイクロリソグラフィ投影露光装置 Download PDF

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JP5634403B2
JP5634403B2 JP2011528202A JP2011528202A JP5634403B2 JP 5634403 B2 JP5634403 B2 JP 5634403B2 JP 2011528202 A JP2011528202 A JP 2011528202A JP 2011528202 A JP2011528202 A JP 2011528202A JP 5634403 B2 JP5634403 B2 JP 5634403B2
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Japan
Prior art keywords
mask
centroid
exposure apparatus
vector
point
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Expired - Fee Related
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JP2011528202A
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Japanese (ja)
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JP2012504320A5 (https=
JP2012504320A (ja
Inventor
ハンス ユールゲン マン
ハンス ユールゲン マン
ヴィンフリート カイザー
ヴィンフリート カイザー
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
JP2011528202A 2008-09-29 2009-08-22 ２つ以上の動作状態を有するマイクロリソグラフィ投影露光装置 Expired - Fee Related JP5634403B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10083608P 2008-09-29 2008-09-29
DE102008042438A DE102008042438B4 (de) 2008-09-29 2008-09-29 Mikrolithographie-Projektionsbelichtungsanlage mit mindestens zwei Arbeitszuständen
US61/100,836 2008-09-29
DE102008042438.2 2008-09-29
PCT/EP2009/006113 WO2010034382A1 (en) 2008-09-29 2009-08-22 Microlithography projection exposure apparatus having at least two operating states

Publications (3)

Publication Number Publication Date
JP2012504320A JP2012504320A (ja) 2012-02-16
JP2012504320A5 JP2012504320A5 (https=) 2012-10-11
JP5634403B2 true JP5634403B2 (ja) 2014-12-03

Family

ID=41794732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011528202A Expired - Fee Related JP5634403B2 (ja) 2008-09-29 2009-08-22 ２つ以上の動作状態を有するマイクロリソグラフィ投影露光装置

Country Status (7)

Country Link
US (1) US9529276B2 (https=)
JP (1) JP5634403B2 (https=)
KR (1) KR101666690B1 (https=)
CN (1) CN102171614B (https=)
DE (1) DE102008042438B4 (https=)
TW (1) TWI483082B (https=)
WO (1) WO2010034382A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041746A1 (de) 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
CN105573060B (zh) * 2014-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置、校准装置和校准方法
CN107667315B (zh) * 2015-05-29 2021-04-16 Asml荷兰有限公司 使用对源辐射的角分布的多次采样的光刻术模拟

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227839A (en) * 1991-06-24 1993-07-13 Etec Systems, Inc. Small field scanner
JP3711586B2 (ja) 1995-06-02 2005-11-02 株式会社ニコン 走査露光装置
JPH11260713A (ja) * 1998-03-12 1999-09-24 Nikon Corp 投影露光方法及び投影露光装置
JP2000091220A (ja) 1998-09-08 2000-03-31 Nikon Corp 投影露光装置及び投影露光方法
JP2003084445A (ja) * 2001-09-13 2003-03-19 Canon Inc 走査型露光装置および露光方法
WO2004079799A1 (ja) * 2003-03-05 2004-09-16 Tadahiro Ohmi マスクレピータ及びマスク製造方法
US6833854B1 (en) * 2003-06-12 2004-12-21 Micronic Laser Systems Ab Method for high precision printing of patterns
US7426076B2 (en) * 2004-12-23 2008-09-16 Asml Holding N.V. Projection system for a lithographic apparatus
US7502097B2 (en) * 2004-12-27 2009-03-10 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
KR101213950B1 (ko) * 2005-05-03 2012-12-18 칼 짜이스 에스엠티 게엠베하 편광을 이용한 마이크로리소그래피 노광장치 및 제1 및 제2오목거울을 구비한 마이크로리소그래피 투영시스템
TWI366004B (en) 2005-09-13 2012-06-11 Zeiss Carl Smt Gmbh Microlithography projection optical system, microlithographic tool comprising such an optical system, method for microlithographic production of microstructured components using such a microlithographic tool, microstructured component being produced by s
DE102006043251A1 (de) * 2005-09-13 2007-03-15 Carl Zeiss Smt Ag Mikrolithographie-Projektionsobjektiv, Projektionsbelichtungsanlage mit einem derartigen Objektiv, Herstellungsverfahren mikrostrukturierter Bauteile mit einer derartigen Projektionsbelichtungsanlage sowie mit diesem Verfahren hergestelltes Bauteil
CN101416117B (zh) * 2006-04-07 2014-11-05 卡尔蔡司Smt有限责任公司 微光刻投影光学系统、工具及其制造方法
US7738077B2 (en) * 2006-07-31 2010-06-15 Asml Netherlands B.V. Patterning device utilizing sets of stepped mirrors and method of using same
DE102006036064A1 (de) 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm
KR20080012240A (ko) * 2006-08-02 2008-02-11 칼 짜이스 에스엠티 아게 193ｎｍ 이하의 파장을 갖는 투영 노광 장치를 위한 조명시스템

Also Published As

Publication number Publication date
WO2010034382A1 (en) 2010-04-01
TWI483082B (zh) 2015-05-01
US9529276B2 (en) 2016-12-27
JP2012504320A (ja) 2012-02-16
KR20110059721A (ko) 2011-06-03
DE102008042438A1 (de) 2010-04-08
US20110200946A1 (en) 2011-08-18
TW201017344A (en) 2010-05-01
CN102171614A (zh) 2011-08-31
KR101666690B1 (ko) 2016-10-17
CN102171614B (zh) 2012-08-08
DE102008042438B4 (de) 2010-11-04

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