JP5619242B2 - 気流発生装置 - Google Patents
気流発生装置 Download PDFInfo
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- JP5619242B2 JP5619242B2 JP2013189162A JP2013189162A JP5619242B2 JP 5619242 B2 JP5619242 B2 JP 5619242B2 JP 2013189162 A JP2013189162 A JP 2013189162A JP 2013189162 A JP2013189162 A JP 2013189162A JP 5619242 B2 JP5619242 B2 JP 5619242B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T19/00—Devices providing for corona discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T23/00—Apparatus for generating ions to be introduced into non-enclosed gases, e.g. into the atmosphere
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
Description
図1は、本発明に係る第1の実施の形態の気流発生装置10の断面を示す図である。
図4は、本発明に係る第2の実施の形態の気流発生装置11の断面を示す図である。図5は、本発明に係る第2の実施の形態の気流発生装置11を第1の誘電層31側から見たときの平面図である。なお、以下の実施の形態において、第1の実施の形態の気流発生装置10の構成と同一部分には、同一の符号を付して重複する説明を省略または簡略する。
図7は、本発明に係る第3の実施の形態の気流発生装置12の断面を示す図である。
図9は、本発明に係る第4の実施の形態の気流発生装置13の断面を示す図である。
また、無機質材料として、上記した材料以外に、例えば、窒化ホウ素を用いることもできる。無機質材料として窒化ホウ素を用いることで、第1の誘電層51を低誘電率化することができるため、電界を緩和して部分放電が発生する電圧を高くすることができる。また、熱伝導率が向上するため、部分放電で生じた熱を周囲に拡散させ、部分放電個所の温度を低下させる効果が得られる。
図11は、本発明に係る第1の実施の形態の気流発生装置10に電極カバー60を備えた構成を示す斜視図である。図12は、図11のA−A断面を示す図であり、気流発生装置10を作動させていない状態(放電OFF)の様子を示す図である。図13は、図11のA−A断面を示す図であり、気流発生装置10を作動させた状態(放電ON)の様子を示す図である。
ここでは、多孔質層と金属との接合層、および緻密質層と金属との接合層における熱応力の影響を熱サイクル試験結果に基づいて評価した。
(封孔処理の影響)
ここでは、第1の誘電層、すなわち放電と接する気流発生装置の表面の層を、セラミックス材料からなる多孔質層で構成した場合、およびセラミックス材料からなる多孔質層に封孔処理を施して、気孔に誘電材料からなる封孔材を充填した封孔材充填層で構成した場合における絶縁耐力を部分放電開始電圧の測定結果に基づいて評価した。
ここでは、第1の誘電層、すなわち放電と接する気流発生装置の表面の層を、樹脂材料からなる樹脂層で構成した場合、および無機質材料の微粒子を分散して含有する樹脂材料からなる微粒子含有樹脂層で構成した場合における絶縁耐力を絶縁破壊までの時間の測定結果に基づいて評価した。
Claims (2)
- セラミックス材料からなる多孔質層の気孔に、誘電材料からなる封孔材を充填した封孔材充填層で構成された第1の誘電層と、
前記第1の誘電層に積層され、セラミックス材料からなる多孔質層で構成された第2の誘電層と、
前記第1の誘電層の表面または表面近傍に設けられた第1の電極と、
前記第2の誘電層の、前記第1の誘電層側とは異なる側の表面または表面近傍に設けられた第2の電極と
を備え、
前記第1の電極と前記第2の電極との間に電圧を印加して、前記第1の誘電層の表面に接する気体の一部をプラズマ化することにより気流を発生させることを特徴とする気流発生装置。 - 前記気流発生装置の少なくとも前記第1の電極を、前記第1の電極と所定の空隙をおいて覆う電極カバーを備えていることを特徴とする請求項1記載の気流発生装置。
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