JP5614362B2 - Fixing the power module to the cooler - Google Patents

Fixing the power module to the cooler Download PDF

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JP5614362B2
JP5614362B2 JP2011085698A JP2011085698A JP5614362B2 JP 5614362 B2 JP5614362 B2 JP 5614362B2 JP 2011085698 A JP2011085698 A JP 2011085698A JP 2011085698 A JP2011085698 A JP 2011085698A JP 5614362 B2 JP5614362 B2 JP 5614362B2
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ceramic substrate
power module
cooler
heat sink
fixing
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JP2012222115A (en
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輝明 長原
輝明 長原
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Description

本発明は、例えば、産業機器や民生機器のモータ制御に使用されるパワーモジュール及びパワーモジュールの冷却器への固定方法に関する。   The present invention relates to a power module used for motor control of, for example, industrial equipment and consumer equipment, and a method for fixing the power module to a cooler.

特許文献１には、絶縁基板及び絶縁基板に固定されたパワーチップを備えるパワーモジュールが開示されている。パワーモジュールの絶縁基板には冷却器が固定されている。   Patent Document 1 discloses a power module including an insulating substrate and a power chip fixed to the insulating substrate. A cooler is fixed to the insulating substrate of the power module.

特開２００９−１６４１５６号公報JP 2009-164156 A

絶縁基板はパワーチップと冷却器の間に位置し、これらを絶縁している。しかしながら、絶縁基板を冷却器に固定する際にこれらの間に異物が入り込むことがある。異物が入り込んだまま、絶縁基板を冷却器に固定しようとすると絶縁基板に割れが生じることがある。絶縁基板が割れると、パワーチップと冷却器の絶縁を確保できない事態が生じる。   The insulating substrate is located between the power chip and the cooler and insulates them. However, when the insulating substrate is fixed to the cooler, foreign matter may enter between them. If an attempt is made to fix the insulating substrate to the cooler with foreign matter entering, the insulating substrate may be cracked. When the insulating substrate is cracked, a situation occurs in which insulation between the power chip and the cooler cannot be secured.

本発明は、上述のような課題を解決するためになされたもので、パワーチップと冷却器の絶縁を確保しつつ、絶縁基板を適正に冷却器に固定できるパワーモジュール及びパワーモジュールの冷却器への固定方法を提供することを目的とする。   The present invention has been made to solve the above-described problems, and to a power module and a power module cooler capable of appropriately fixing an insulating substrate to a cooler while ensuring insulation between the power chip and the cooler. The purpose is to provide a fixing method.

本願の発明に係るパワーモジュールの冷却器への固定方法は、パワーモジュールの絶縁基板の溝が形成された面である放熱面を、冷却器の平面に対して摺動させる工程と、該放熱面と該冷却器の平面が向き合った状態でこれらの面が密着するように該パワーモジュールと該冷却器を固定する工程と、を備えたことを特徴とする。   The method of fixing the power module to the cooler according to the invention of the present application includes a step of sliding a heat radiating surface, which is a surface on which an insulating substrate of the power module is formed, with respect to the plane of the cooler, and the heat radiating surface. And a step of fixing the power module and the cooler so that these surfaces are in close contact with each other in a state where the planes of the cooler face each other.

本発明によれば、絶縁基板に溝を形成するので、絶縁基板を冷却器に固定する際の絶縁基板の割れを防止できる。   According to the present invention, since the groove is formed in the insulating substrate, the insulating substrate can be prevented from cracking when the insulating substrate is fixed to the cooler.

本発明の実施の形態１に係るパワーモジュールをヒートシンクに固定したことを示す断面図である。It is sectional drawing which shows having fixed the power module which concerns on Embodiment 1 of this invention to the heat sink. 本発明の実施の形態１に係るパワーモジュールの平面図である。It is a top view of the power module which concerns on Embodiment 1 of this invention. セラミック基板の放熱面を示す斜視図である。It is a perspective view which shows the thermal radiation surface of a ceramic substrate. 異物によりセラミック基板がたわむことを示す断面図である。It is sectional drawing which shows that a ceramic substrate bends with a foreign material. 異物によりセラミック基板が割れたことを示す断面図である。It is sectional drawing which shows that the ceramic substrate was cracked by the foreign material. 本発明の実施の形態２に係るパワーモジュールをヒートシンクに固定したことを示す断面図である。It is sectional drawing which shows having fixed the power module which concerns on Embodiment 2 of this invention to the heat sink. 本発明の実施の形態２に係るパワーモジュールの平面図である。It is a top view of the power module which concerns on Embodiment 2 of this invention. 本発明の実施の形態３に係るパワーモジュールをヒートシンクに固定したことを示す断面図である。It is sectional drawing which shows having fixed the power module which concerns on Embodiment 3 of this invention to the heat sink. 本発明の実施の形態４に係るパワーモジュールのセラミック基板の放熱面を示す斜視図である。It is a perspective view which shows the thermal radiation surface of the ceramic substrate of the power module which concerns on Embodiment 4 of this invention. 本発明の実施の形態４に係るパワーモジュールの冷却器への固定方法を示す図である。It is a figure which shows the fixing method to the cooler of the power module which concerns on Embodiment 4 of this invention.

実施の形態１．
図１は、本発明の実施の形態１に係るパワーモジュールをヒートシンクに固定したことを示す断面図である。パワーモジュール１０は、セラミック基板１２を備えている。セラミック基板１２は、絶縁性及び熱伝導性に優れた材料であるアルミナで形成されている。 Embodiment 1 FIG.
FIG. 1 is a cross-sectional view showing that the power module according to Embodiment 1 of the present invention is fixed to a heat sink. The power module 10 includes a ceramic substrate 12. The ceramic substrate 12 is made of alumina, which is a material excellent in insulation and thermal conductivity.

セラミック基板１２の上には接着剤１４によりリードフレーム１６が固定されている。リードフレーム１６にはパワーチップ１８が固定されている。このように、セラミック基板１２の上面には、リードフレーム１６を介してパワーチップ１８が固定されるので、セラミック基板１２の上面を固定面１２ｓと称する。リードフレーム１６はパワーチップ１８と固定面１２ｓの間に挟まれるように固定されている。   A lead frame 16 is fixed on the ceramic substrate 12 with an adhesive 14. A power chip 18 is fixed to the lead frame 16. Thus, since the power chip 18 is fixed to the upper surface of the ceramic substrate 12 via the lead frame 16, the upper surface of the ceramic substrate 12 is referred to as a fixed surface 12s. The lead frame 16 is fixed so as to be sandwiched between the power chip 18 and the fixed surface 12s.

セラミック基板１２の固定面１２ｓと反対の面は放熱面１２ｒと称する。パワーモジュール１０は、放熱面１２ｒを外部に露出させるように、パワーチップ１８、リードフレーム１６、及びセラミック基板１２を覆うモールド樹脂２０を備えている。セラミック基板１２の放熱面１２ｒにはＶ字溝１２ａ、１２ｂ、及び１２ｃが形成されている。Ｖ字溝１２ａ、１２ｂ、及び１２ｃは、リードフレーム１６の直下領域からずらして形成されている。つまり、リードフレーム１６の直下領域にはＶ字溝１２ａ、１２ｂ、及び１２ｃはない。Ｖ字溝１２ａ、１２ｂ、及び１２ｃの深さは、セラミック基板１２の厚さの１／２である。   The surface opposite to the fixed surface 12s of the ceramic substrate 12 is referred to as a heat radiating surface 12r. The power module 10 includes a mold resin 20 that covers the power chip 18, the lead frame 16, and the ceramic substrate 12 so that the heat radiation surface 12 r is exposed to the outside. V-shaped grooves 12 a, 12 b, and 12 c are formed in the heat radiating surface 12 r of the ceramic substrate 12. The V-shaped grooves 12 a, 12 b, and 12 c are formed so as to be shifted from the region immediately below the lead frame 16. That is, there are no V-shaped grooves 12a, 12b, and 12c in the region immediately below the lead frame 16. The depth of the V-shaped grooves 12a, 12b, and 12c is ½ of the thickness of the ceramic substrate 12.

パワーモジュール１０は、ねじ２２によりヒートシンク２６に固定されている。この固定により、セラミック基板１２の放熱面１２ｒは、放熱グリース２４を介してヒートシンク２６に接している。これによりパワーチップ１８の熱が放熱面１２ｒから放出されやすくなる。   The power module 10 is fixed to the heat sink 26 with screws 22. With this fixing, the heat radiating surface 12r of the ceramic substrate 12 is in contact with the heat sink 26 via the heat radiating grease 24. Thereby, the heat of the power chip 18 is easily released from the heat radiation surface 12r.

図２は、本発明の実施の形態１に係るパワーモジュールの平面図である。図２ではパワーモジュール１０の内部を示すために、モールド樹脂２０は輪郭のみ示している。パワーチップ１８は、ＩＧＢＴ１８ａとＦＷＤｉ（還流ダイオード）１８ｂを有している。パワーモジュールは、ＩＧＢＴ１８ａとＦＷＤｉ１８ｂがリードフレーム１６やワイヤ３０で接続されることで、３相ブリッジ回路を形成している。また、ＩＧＢＴ１８ａのオンオフは、駆動用ＩＣ３２により制御される。   FIG. 2 is a plan view of the power module according to Embodiment 1 of the present invention. In FIG. 2, only the contour of the mold resin 20 is shown to show the inside of the power module 10. The power chip 18 includes an IGBT 18a and an FWDi (reflux diode) 18b. The power module forms a three-phase bridge circuit by connecting the IGBT 18 a and the FWDi 18 b with the lead frame 16 and the wire 30. The on / off state of the IGBT 18a is controlled by the driving IC 32.

図３は、セラミック基板１２の放熱面１２ｒを示す斜視図である。Ｖ字溝１２ａ、１２ｂ、及び１２ｃは、放熱面１２ｒの短手方向に直線的に形成されている。   FIG. 3 is a perspective view showing the heat dissipation surface 12r of the ceramic substrate 12. As shown in FIG. The V-shaped grooves 12a, 12b, and 12c are linearly formed in the short direction of the heat radiation surface 12r.

パワーモジュールをヒートシンクに取り付ける際に、これらの間に異物が入り込むことがあった。そして、この異物によりセラミック基板が割れてパワーチップとヒートシンクの間の絶縁を確保できないことがあった。ところが、本発明の実施の形態１に係るパワーモジュール１０によれば、セラミック基板１２とヒートシンク２６の間に異物があると、Ｖ字溝１２ａ、１２ｂ、及び１２ｃを基点としてセラミック基板１２がたわむ。そのため、セラミック基板１２にかかる応力を緩和できる。このことについて図４を参照して説明する。   When attaching the power module to the heat sink, foreign matter sometimes entered between them. Then, the ceramic substrate may be cracked by the foreign matter, and insulation between the power chip and the heat sink may not be ensured. However, according to the power module 10 according to the first embodiment of the present invention, if there is a foreign object between the ceramic substrate 12 and the heat sink 26, the ceramic substrate 12 bends with the V-shaped grooves 12a, 12b, and 12c as base points. Therefore, the stress applied to the ceramic substrate 12 can be relaxed. This will be described with reference to FIG.

図４は、異物によりセラミック基板がたわむことを示す断面図である。セラミック基板１２の放熱面１２ｒとヒートシンク２６の間に異物５０が入り込んでいるが、Ｖ字溝１２ａ、１２ｂ、及び１２ｃを基点にセラミック基板１２がたわみ、セラミック基板１２にかかる応力を緩和している。よって、セラミック基板１２の割れを防止し、パワーチップ１８とヒートシンク２６の間の絶縁を確保できる。   FIG. 4 is a cross-sectional view showing that the ceramic substrate is bent by the foreign matter. The foreign substance 50 enters between the heat radiation surface 12r of the ceramic substrate 12 and the heat sink 26, but the ceramic substrate 12 bends from the V-shaped grooves 12a, 12b, and 12c, and the stress applied to the ceramic substrate 12 is relieved. . Therefore, cracking of the ceramic substrate 12 can be prevented, and insulation between the power chip 18 and the heat sink 26 can be secured.

これに加えて、本発明の実施の形態１に係るパワーモジュール１０によれば、万一異物によりセラミック基板が割れても、パワーチップとヒートシンクの間の絶縁を確保できる。このことについて、図５を参照して説明する。   In addition, according to the power module 10 according to the first embodiment of the present invention, insulation between the power chip and the heat sink can be ensured even if the ceramic substrate is broken by foreign matter. This will be described with reference to FIG.

図５は、異物によりセラミック基板が割れたことを示す断面図である。たとえば異物５０が大型であった場合には、セラミック基板１２のたわみではセラミック基板の応力緩和が不十分で、セラミック基板１２が割れることも考えられる。この場合、いずれかのＶ字溝に沿ってセラミック基板１２が割れる。図５ではＶ字溝１２ｂの部分に割れ５２が生じている。Ｖ字溝１２ｂはリードフレーム１６の直下領域からずらして形成されているため、割れ５２はリードフレーム１６からずれた場所に生じる。従って、割れ５２に放熱グリース２４が侵入してもパワーチップ１８とヒートシンク２６の間の絶縁を確保しうる。   FIG. 5 is a cross-sectional view showing that the ceramic substrate has been cracked by foreign matter. For example, when the foreign material 50 is large, it is considered that the ceramic substrate 12 is cracked due to insufficient stress relaxation of the ceramic substrate due to the deflection of the ceramic substrate 12. In this case, the ceramic substrate 12 is cracked along any V-shaped groove. In FIG. 5, the crack 52 has arisen in the part of the V-shaped groove 12b. Since the V-shaped groove 12 b is formed so as to be shifted from the region immediately below the lead frame 16, the crack 52 is generated at a position shifted from the lead frame 16. Therefore, even if the thermal grease 24 enters the crack 52, the insulation between the power chip 18 and the heat sink 26 can be ensured.

このように、本発明の実施の形態１に係るパワーモジュール１０によれば、異物によるセラミック基板の割れを回避できる。また、万一セラミック基板が割れてもパワーチップ１８とヒートシンク２６が導通することは回避できる。従って、パワーチップ１８とヒートシンク２６の絶縁を確保しつつ、セラミック基板１２にヒートシンク２６を固定することができる。   Thus, according to the power module 10 which concerns on Embodiment 1 of this invention, the crack of the ceramic substrate by a foreign material can be avoided. In addition, even if the ceramic substrate is broken, it is possible to avoid the conduction between the power chip 18 and the heat sink 26. Therefore, the heat sink 26 can be fixed to the ceramic substrate 12 while ensuring the insulation between the power chip 18 and the heat sink 26.

本発明の実施の形態１に係るパワーモジュール１０は、溝によりセラミック基板１２がたわんで「異物を原因とするセラミック基板に対する応力」を緩和することが特徴である。この特徴を有する限りにおいて様々な変形が可能である。たとえば、セラミック基板１２は、絶縁性及び熱伝導性に優れた材料で形成された絶縁基板である限り特に限定されない。従って、セラミック基板１２を形成する材料はアルミナに限定されない。   The power module 10 according to the first embodiment of the present invention is characterized in that the ceramic substrate 12 bends due to the groove to relieve the “stress on the ceramic substrate caused by foreign matter”. As long as it has this feature, various modifications are possible. For example, the ceramic substrate 12 is not particularly limited as long as it is an insulating substrate formed of a material having excellent insulating properties and thermal conductivity. Therefore, the material forming the ceramic substrate 12 is not limited to alumina.

また、セラミック基板１２に形成した溝はＶ字溝に限らない。溝の形状は、セラミック基板が溝を基点にたわむことができるように形成されていれば特に限定されない。しかしながら、溝を起点として絶縁基板が割れる場合は、割れの位置を制御しやすいＶ字溝が好適である。   Further, the groove formed in the ceramic substrate 12 is not limited to the V-shaped groove. The shape of the groove is not particularly limited as long as the ceramic substrate is formed so that it can bend from the groove. However, when the insulating substrate breaks starting from the groove, a V-shaped groove that can easily control the position of the crack is preferable.

また、セラミック基板１２に形成したＶ字溝１２ａ、１２ｂ、及び１２ｃはリードフレーム１６の直下領域からずらして形成することとしたが、本発明はこれに限定されない。Ｖ字溝がセラミック基板のどこに形成されていても、セラミック基板の割れを抑制する効果を得ることができる。   Further, the V-shaped grooves 12a, 12b, and 12c formed in the ceramic substrate 12 are formed so as to be shifted from the region immediately below the lead frame 16, but the present invention is not limited to this. The effect of suppressing cracking of the ceramic substrate can be obtained no matter where the V-shaped groove is formed on the ceramic substrate.

また、セラミック基板１２に形成したＶ字溝１２ａ、１２ｂ、及び１２ｃの深さはセラミック基板１２の厚さの１／２としたが、パワーチップ１８とヒートシンク２６の絶縁を確保できる限りこれに限定されない。   Further, the depth of the V-shaped grooves 12a, 12b, and 12c formed in the ceramic substrate 12 is ½ of the thickness of the ceramic substrate 12, but is limited to this as long as the insulation between the power chip 18 and the heat sink 26 can be secured. Not.

また、ヒートシンク２６は、水冷装置などの冷却器であれば特に限定されない。さらに、リードフレーム１６は必須でない。リードフレーム１６がなくても、セラミック基板１２の上に発熱体であるパワーチップ１８があれば本発明の効果を得ることができる。   The heat sink 26 is not particularly limited as long as it is a cooler such as a water cooling device. Furthermore, the lead frame 16 is not essential. Even if the lead frame 16 is not provided, the effect of the present invention can be obtained if the power chip 18 as a heating element is provided on the ceramic substrate 12.

実施の形態２．
図６は、本発明の実施の形態２に係るパワーモジュールをヒートシンクに固定したことを示す断面図である。本発明の実施の形態１で説明済みの構成要素については、同一の符号を付して説明を省略する。以後の実施の形態についても同様である。 Embodiment 2. FIG.
FIG. 6 is a cross-sectional view showing that the power module according to Embodiment 2 of the present invention is fixed to a heat sink. The components already described in the first embodiment of the present invention are denoted by the same reference numerals and description thereof is omitted. The same applies to the following embodiments.

セラミック基板６２の固定面６２ｓにはＶ字溝６２ａ、６２ｂ、及び６２ｃが形成されている。Ｖ字溝６２ａ、６２ｂ、及び６２ｃはリードフレーム１６の直下領域からずらして形成されている。セラミック基板６２の放熱面６２ｒは全面が放熱グリース２４を介してヒートシンク２６と接している。   V-shaped grooves 62 a, 62 b and 62 c are formed on the fixed surface 62 s of the ceramic substrate 62. The V-shaped grooves 62 a, 62 b, and 62 c are formed so as to be shifted from the region immediately below the lead frame 16. The entire heat dissipation surface 62r of the ceramic substrate 62 is in contact with the heat sink 26 via the heat dissipation grease 24.

図７は、本発明の実施の形態２に係るパワーモジュールの平面図である。図７ではパワーモジュール６０の内部を示すために、モールド樹脂２０は輪郭のみ示している。セラミック基板６２の固定面６２ｓにはＶ字溝６２ａ、６２ｂ、及び６２ｃが固定面６２ｓの短手方向に直線的に形成されている。   FIG. 7 is a plan view of a power module according to Embodiment 2 of the present invention. In FIG. 7, in order to show the inside of the power module 60, only the outline of the mold resin 20 is shown. V-shaped grooves 62a, 62b, and 62c are linearly formed on the fixed surface 62s of the ceramic substrate 62 in the short direction of the fixed surface 62s.

本発明の実施の形態２に係るパワーモジュール６０によれば、実施の形態１に係るパワーモジュール１０の効果を得つつ、パワーモジュールの放熱性を高めることができる。すなわち、セラミック基板６２の放熱面６２ｒが全面で放熱グリース２４を介してヒートシンク２６と接しているので、パワーチップ１８の熱を速やかにヒートシンク２６へ放出できる。   According to the power module 60 according to the second embodiment of the present invention, the heat dissipation of the power module can be enhanced while obtaining the effect of the power module 10 according to the first embodiment. That is, since the heat radiating surface 62r of the ceramic substrate 62 is in contact with the heat sink 26 through the heat radiating grease 24, the heat of the power chip 18 can be quickly released to the heat sink 26.

本発明の実施の形態２に係るパワーモジュール６０は、少なくとも実施の形態１と同程度の変形は可能である。   The power module 60 according to the second embodiment of the present invention can be modified at least as much as the first embodiment.

実施の形態３．
図８は、本発明の実施の形態３に係るパワーモジュールをヒートシンクに固定したことを示す断面図である。パワーモジュール７０はセラミック基板７２を備えている。セラミック基板７２の固定面７２ｓにはＶ字溝７２ａ、７２ｂ、及び７２ｃが形成されている。セラミック基板７２の放熱面７２ｒにはＶ字溝７２ｄ、７２ｅ、及び７２ｆが形成されている。Ｖ字溝７２ａ、７２ｂ、及び７２ｃの直下にはそれぞれＶ字溝７２ｄ、７２ｅ、及び７２ｆが形成されている。 Embodiment 3 FIG.
FIG. 8 is a cross-sectional view showing that the power module according to Embodiment 3 of the present invention is fixed to a heat sink. The power module 70 includes a ceramic substrate 72. V-shaped grooves 72 a, 72 b, and 72 c are formed on the fixed surface 72 s of the ceramic substrate 72. V-shaped grooves 72d, 72e, and 72f are formed in the heat dissipation surface 72r of the ceramic substrate 72. V-shaped grooves 72d, 72e, and 72f are formed immediately below the V-shaped grooves 72a, 72b, and 72c, respectively.

本発明の実施の形態３に係るパワーモジュール７０の特徴は、セラミック基板７２の固定面７２ｓと放熱面７２ｒの両方にＶ字溝が形成されていることである。この特徴により、セラミック基板７２とヒートシンク２６の間に異物が入り込んだ場合にセラミック基板７２がたわみやすくなる。よってセラミック基板７２への応力を緩和し、セラミック基板７２の割れを防止できる。   A feature of the power module 70 according to the third embodiment of the present invention is that V-shaped grooves are formed in both the fixing surface 72s and the heat radiation surface 72r of the ceramic substrate 72. Due to this feature, the ceramic substrate 72 is easily bent when a foreign substance enters between the ceramic substrate 72 and the heat sink 26. Therefore, stress on the ceramic substrate 72 can be relaxed and cracking of the ceramic substrate 72 can be prevented.

また、セラミック基板７２が万一割れる場合でも、Ｖ字溝７２ａ、７２ｂ、及び７２ｃの直下にそれぞれＶ字溝７２ｄ、７２ｅ、及び７２ｆを形成しているため、割れの位置をリードフレーム１６からずれた場所に限定できる。つまりリードフレーム１６の直下でセラミック基板７２が割れてパワーチップ１８とヒートシンク２６が導通することは回避できる。   Even if the ceramic substrate 72 is broken, the V-shaped grooves 72d, 72e, and 72f are formed immediately below the V-shaped grooves 72a, 72b, and 72c, respectively, so that the position of the crack is shifted from the lead frame 16. Can be limited to places. That is, it can be avoided that the ceramic substrate 72 is broken directly under the lead frame 16 and the power chip 18 and the heat sink 26 are electrically connected.

本発明の実施の形態１乃至３ではセラミック基板の固定面及び固定面と反対の放熱面の少なくとも一方に溝が形成されることを示した。このような構成により、パワーチップ１８とヒートシンク２６の間の絶縁を確保できる。なお、本発明の実施の形態３に係るパワーモジュール７０は、少なくとも実施の形態１と同程度の変形は可能である。   In the first to third embodiments of the present invention, it is shown that a groove is formed on at least one of the fixing surface of the ceramic substrate and the heat radiating surface opposite to the fixing surface. With such a configuration, insulation between the power chip 18 and the heat sink 26 can be secured. The power module 70 according to the third embodiment of the present invention can be modified at least as much as the first embodiment.

実施の形態４．
図９は、本発明の実施の形態４に係るパワーモジュールのセラミック基板の放熱面を示す斜視図である。セラミック基板８０の放熱面８０ｒには以下のようにＶ字溝が形成されている。Ｖ字溝８０ａ、８０ｂ、８０ｃ、８０ｄ、及び８０ｅは、放熱面８０ｒの短手方向に直線的に形成されている。Ｖ字溝８０ｆ、及び８０ｇは、放熱面８０ｒの長手方向に直線的に形成されている。Ｖ字溝８０ａ、８０ｂ、８０ｃ、８０ｄ、及び８０ｅと、Ｖ字溝８０ｆ、及び８０ｇは交差するように形成されている。 Embodiment 4 FIG.
FIG. 9 is a perspective view showing a heat dissipation surface of the ceramic substrate of the power module according to Embodiment 4 of the present invention. A V-shaped groove is formed in the heat dissipation surface 80r of the ceramic substrate 80 as follows. The V-shaped grooves 80a, 80b, 80c, 80d, and 80e are linearly formed in the short direction of the heat radiating surface 80r. The V-shaped grooves 80f and 80g are linearly formed in the longitudinal direction of the heat radiating surface 80r. The V-shaped grooves 80a, 80b, 80c, 80d, and 80e and the V-shaped grooves 80f and 80g are formed so as to intersect with each other.

図１０は、本発明の実施の形態４に係るパワーモジュールの冷却器への固定方法を示す図である。図１０ではパワーモジュール８２の内部を示すために、モールド樹脂２０は輪郭のみ示している。また、配線の記載は省略した。この図中、Ｖ字溝の位置は破線で示している。Ｖ字溝８０ａ、８０ｂ、８０ｃ、８０ｄ、及び８０ｅは、リードフレーム１６の直下領域からずらして形成されている。また、Ｖ字溝８０ｆ、及び８０ｇは、パワーチップ１８（１８ａ又は１８ｂ）の直下領域からずらして形成されている。   FIG. 10 is a diagram illustrating a method of fixing the power module to the cooler according to Embodiment 4 of the present invention. In FIG. 10, only the contour of the mold resin 20 is shown to show the inside of the power module 82. In addition, description of wiring was omitted. In this figure, the position of the V-shaped groove is indicated by a broken line. The V-shaped grooves 80 a, 80 b, 80 c, 80 d, and 80 e are formed so as to be shifted from the region immediately below the lead frame 16. Further, the V-shaped grooves 80f and 80g are formed so as to be shifted from the region immediately below the power chip 18 (18a or 18b).

この固定方法では、まずパワーモジュール８２のセラミック基板８０の放熱面８０ｒを、ヒートシンク２６の平面に対して摺動させる。この摺動は、セラミック基板８０の放熱面８０ｒとヒートシンク２６の平面の間を放熱グリース２４が埋めている状態で行われる。図１０の両方向矢印は、摺動方向が上下左右方向であることを示す。この摺動により、セラミック基板８０の放熱面８０ｒとヒートシンク２６の間の異物９０はいずれかのＶ字溝に捕捉される。次に、放熱面８０ｒとヒートシンク２６の平面が向き合った状態でこれらの面が密着するようにねじ２２を締めてパワーモジュール８２とヒートシンク２６を固定する。   In this fixing method, first, the heat radiating surface 80 r of the ceramic substrate 80 of the power module 82 is slid with respect to the plane of the heat sink 26. This sliding is performed in a state where the heat radiation grease 24 fills the space between the heat radiation surface 80r of the ceramic substrate 80 and the flat surface of the heat sink 26. 10 indicates that the sliding direction is up / down / left / right. By this sliding, the foreign matter 90 between the heat radiation surface 80r of the ceramic substrate 80 and the heat sink 26 is captured in any V-shaped groove. Next, the power module 82 and the heat sink 26 are fixed by tightening the screws 22 so that the heat radiating surface 80r and the flat surface of the heat sink 26 face each other so that these surfaces come into close contact with each other.

本発明の実施の形態４に係るパワーモジュールの冷却器への固定方法によれば、異物をＶ字溝８０ａ、８０ｂ、８０ｃ、８０ｄ、８０ｅ、８０ｆ、又は８０ｇに捕捉するので、異物によりセラミック基板８０に及ぼされる応力を低減しその割れを防止できる。また、全てのＶ字溝８０ａ、８０ｂ、８０ｃ、８０ｄ、８０ｅ、８０ｆ、及び８０ｇはパワーチップ１８の直下領域からずらして形成されている。よって、パワーモジュール８２の良好な放熱性を確保できる。   According to the method for fixing the power module to the cooler according to the fourth embodiment of the present invention, foreign matters are captured in the V-shaped grooves 80a, 80b, 80c, 80d, 80e, 80f, or 80g. The stress exerted on 80 can be reduced and cracking can be prevented. All the V-shaped grooves 80 a, 80 b, 80 c, 80 d, 80 e, 80 f, and 80 g are formed so as to be shifted from the region immediately below the power chip 18. Therefore, good heat dissipation of the power module 82 can be ensured.

なお、本発明の実施の形態４に係るパワーモジュールは、少なくとも実施の形態１と同程度の変形は可能である。   The power module according to Embodiment 4 of the present invention can be modified at least as much as in Embodiment 1.

１０ パワーモジュール、 １２ セラミック基板、 １２ａ，１２ｂ，１２ｃ Ｖ字溝、 １２ｓ 固定面、 １２ｒ 放熱面、 １４ 接着剤、 １６ リードフレーム、 １８ パワーチップ、 ２０ モールド樹脂、 ２２ ねじ、 ２４ 放熱グリース、 ２６ ヒートシンク、 ５０ 異物   10 power module, 12 ceramic substrate, 12a, 12b, 12c V-groove, 12s fixing surface, 12r heat radiation surface, 14 adhesive, 16 lead frame, 18 power chip, 20 mold resin, 22 screw, 24 heat radiation grease, 26 heat sink , 50 foreign matter

Claims (3)

パワーモジュールの絶縁基板の溝が形成された面である放熱面を、冷却器の平面に対して摺動させる工程と、
前記放熱面と前記冷却器の平面が向き合った状態でこれらの面が密着するように前記パワーモジュールと前記冷却器を固定する工程と、を備えたことを特徴とするパワーモジュールの冷却器への固定方法。 Sliding the heat dissipation surface, which is the surface on which the grooves of the insulating substrate of the power module are formed, with respect to the plane of the cooler;
A step of fixing the power module and the cooler so that the surfaces of the heat dissipation surface and the plane of the cooler are in close contact with each other. Fixing method. 前記放熱面と前記冷却器の平面の間は放熱グリースが埋めていることを特徴とする請求項１に記載のパワーモジュールの冷却器への固定方法。 The method for fixing a power module to a cooler according to claim 1 , wherein heat radiation grease is buried between the heat radiation surface and the plane of the cooler. 前記溝は交差するように複数形成されたことを特徴とする請求項１又は２に記載のパワーモジュールの冷却器への固定方法。 The method for fixing a power module to a cooler according to claim 1 or 2 , wherein a plurality of the grooves are formed so as to intersect with each other.
JP2011085698A 2011-04-07 2011-04-07 Fixing the power module to the cooler Active JP5614362B2 (en)

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