JP5490276B2 - Power semiconductor device - Google Patents

Description

  The present invention relates to a power semiconductor device widely applied to in-vehicle, FA equipment, electric railway applications, and the like.

  A power semiconductor device is a device that houses a power semiconductor element and has a function of adjusting power by switching operation of the power semiconductor element, and the device is provided with wiring between the housed power semiconductor element and the outside of the device. It has been.

  The power semiconductor element housed in the conventional device is soldered to the insulating substrate, and the wiring is formed by the wire or metal lead from the insulating substrate or the element body, and connected to the metal terminal led out to the outside. The

  The metal terminal is embedded in the resin case of the device and led out of the device from the periphery of the power semiconductor element. Alternatively, it is connected to wiring on an insulating substrate around the power semiconductor element and led out of the apparatus. The apparatus is filled with resin so as to cover the insulating substrate, the power semiconductor element, the metal wiring, and the metal terminal, and is protected from the outside.

  On the other hand, there is a power semiconductor device in which wiring is formed between a power semiconductor element and the outside of the device using a lead frame made of metal, and is molded and hardened by a hard resin (for example, Patent Document 1). After the wiring is molded and hardened, a necessary portion of the lead frame is cut and bent to be finished into a device. Compared to the above resin-filled type apparatus, since it is manufactured with a lead frame in which metal leads are connected in advance, it has been put into practical use as a structure with extremely high productivity when mass-produced. In addition, since it is hardened by hard resin, it can disperse stress due to thermal expansion mismatch between power semiconductor elements with greatly different thermal expansion and other metal members, which greatly improves long-term reliability that has been emphasized in recent years. It is a useful device.

JP 2004-165281 A (FIGS. 1 to 3)

  In this power semiconductor device, the metal wiring by the lead frame is formed around the power semiconductor element and is led out of the device from the portion other than the upper or lower portion where the power semiconductor element is mounted. There is a problem in that the upper or lower portion becomes a dead space, and the power semiconductor device becomes larger.

  In addition, a structure in which the metal wiring formed around the power semiconductor element is led out to the outside of the device and then the metal terminal is bent to be formed on the upper portion of the device is conceivable. However, the wiring becomes long and the inductance becomes large. There is a problem in that the material yield increases and the material yield decreases.

  The present invention has been made to solve the above problems, and an object of the present invention is to provide a power semiconductor device that can suppress an increase in size of the device and suppress an increase in inductance.

A power semiconductor device according to the present invention includes a power semiconductor element, a first metal lead having one end connected to the power semiconductor element and the other end led out above the power semiconductor element, the power semiconductor element, and the first A mold resin which covers and fills the one end of one metal lead and has a recess formed above the power semiconductor element; and a first metal block accommodated in the recess; The other end is bent and connected to the upper surface of the first metal block, a part of the upper surface is connected to the power semiconductor element through a lower surface electrode pattern formed on the lower surface of the power semiconductor element, and the mold A second metal block covered with resin, and a recess provided in the mold resin above the second metal block, one end side of the mold A third metal block connected to another part of the upper surface of the second metal block via a second metal lead covered with grease, wherein the second metal lead is the third metal An end portion on the other end side connected to the upper surface of the block is exposed from the surface of the mold resin, and the first and third metal blocks include a male screw portion on the upper surface.

According to the power semiconductor device of the present invention, the power semiconductor element, the first metal lead having one end connected to the power semiconductor element and the other end led out above the power semiconductor element, the power semiconductor element, A mold resin covering and filling the one end side of the first metal lead and having a recess formed above the power semiconductor element; and a first metal block housed in the recess. The other end side of the lead is bent and connected to the upper surface of the first metal block, a part of the upper surface is connected to the power semiconductor element through a lower surface electrode pattern formed on the lower surface of the power semiconductor element, and A second metal block covered with the mold resin, and a recess provided in the mold resin above the second metal block, one end side of which is A third metal block connected to another part of the upper surface of the second metal block through a second metal lead covered with a resin, and the second metal lead includes the third metal lead. The end of the other end connected to the upper surface of the metal block is exposed from the surface of the mold resin, and the first and third metal blocks are provided with a male screw portion on the upper surface, thereby suppressing an increase in size of the apparatus. In addition, an increase in inductance can be suppressed.

1 is a diagram illustrating a circuit configuration of a power semiconductor device according to a first embodiment; 1 is a schematic cross-sectional view of a power semiconductor device according to a first embodiment. 1 is a schematic cross-sectional view of a power semiconductor device according to a first embodiment. 1 is a schematic cross-sectional view of a power semiconductor device according to a first embodiment. 1 is a schematic cross-sectional view of a power semiconductor device according to a first embodiment. FIG. 3 is a diagram illustrating a structure of a metal block of the power semiconductor device according to the first embodiment. FIG. 3 is a diagram illustrating a structure of a metal block of the power semiconductor device according to the first embodiment. FIG. 6 is a schematic cross-sectional view of a power semiconductor device according to a second embodiment. FIG. 6 is a schematic cross-sectional view of a power semiconductor device according to a second embodiment. FIG. 6 is a diagram showing the shape of a metal lead tip of a power semiconductor device according to a second embodiment. FIG. 6 is a schematic cross-sectional view of a power semiconductor device according to a third embodiment. It is a figure which shows the protrusion part or groove part of the power semiconductor device concerning Embodiment 4. FIG. It is a figure which shows the protrusion part or groove part of the power semiconductor device concerning Embodiment 4. FIG.

<A. Embodiment 1>
<A-1. Configuration>
FIG. 1 is an excerpt of a part of the circuit configuration of a power semiconductor device, which is a representative power semiconductor device with many use cases. In the power semiconductor device, a transistor such as an IGBT serves as a power switch, and by controlling the on / off state of the switch, desired power is supplied to the load and the operation state of the load is controlled. Further, even if a transistor switch that controls large electric power is turned off (cut off), the current cannot be cut off instantaneously because a load and a parasitic inductance component exist. For this reason, a diode is provided in parallel with the transistor to bypass the current at the time of interruption.

  That is, the circuit configuration shown in FIG. 1A is basic, and the number of circuits increases depending on the control application such as single phase or three phases. FIG. 1B is a frequently used three-phase half-bridge inverter circuit. The power semiconductor device may have a circuit configuration surrounded by each dotted line in FIG. 1, and therefore, the number of power semiconductor elements such as transistors and diodes incorporated in the device is different.

  For example, in the combination of an IGBT and a flywheel diode, there are 1 element each in the configuration of the dotted line circuit 1, 2 elements in the dotted line circuit 2, and 6 elements in the dotted line circuit 3. Further, depending on the current capacity, power semiconductor elements are often arranged side by side in parallel, and the number of elements increases by multiplying the parallel number. On the other hand, in a MOSFET, a built-in parasitic diode is often used as a flywheel diode, and the number of elements is different.

  In the first embodiment, for the sake of convenience, description will be made based on the example of the circuit 1 in FIG. 1. However, it goes without saying that the same effect can be obtained depending on the number of other elements and the circuit configuration. As a result, the benefits to downsizing and weight reduction will become even greater.

  FIG. 2 is a schematic cross-sectional view of the power semiconductor device for explaining the first embodiment of the present invention. The power semiconductor element 4 has a lower surface electrode pattern 101 formed on the lower surface side, and a part of the heat spreader 5 as a second metal block is soldered and fixed to the lower surface electrode pattern 101 via a solder layer 1001. Yes. The power semiconductor element 4 is composed of a combination of IGBT and FwDi as described above, and the heat spreader 5 also functions as a conductive path.

  An insulating layer is provided below the heat spreader 5. The insulating layer is, for example, an insulating sheet 6 in which a resin mainly composed of epoxy is mixed with a filler, and ensures electrical insulation between the heat spreader 5 and the outside of the power semiconductor device. Further below, a plate 8 is provided.

  On the other hand, the upper surface electrode pattern 100 as the first upper surface electrode pattern is selectively formed on the upper surface of the power semiconductor element 4, and the metal block 7 as the first metal block is a solder layer with respect to the upper surface electrode pattern 100. 1000 is fixed by soldering. The metal block 7 is individually fixed above each of the IGBT and FwDi, and a female screw portion 11 is formed from the surface opposite to the fixed surface of the power semiconductor element 4.

  Further, a metal block 12 as a third metal block connected to another part of the upper surface of the heat spreader 5 via a solder layer 1001 is fixed to the side of one power semiconductor element 4. Similarly to the metal block 7, the metal block 12 has a female screw portion 11 formed from the upper surface, and the upper surface is exposed from the mold resin 9. Further, an outsert fixing guide 13 is fixed to the other side of the power semiconductor element 4. The outsert fixing guide 13 is made of resin, and a signal terminal 109 is connected to the upper surface thereof.

  In the power semiconductor device, each member to be encapsulated is molded resin so that the surfaces of the metal blocks 7 and 12 on the side where the female thread 11 is formed and the surface of the insulating sheet 6 or the plate 8 provided below the insulating sheet 6 are exposed. 9 is integrally supported by the mold.

  At this time, the metal block 7 is joined to the upper surface electrode pattern 100 while leaving the periphery of the power semiconductor element 4, and the female screw portion 11 is configured to be positioned substantially above the power semiconductor element 4. By using the female screw portion 11 arranged in this manner, the connection from the power semiconductor element 4 to the outside of the power semiconductor device can be made the shortest distance, wiring resistance and inductance can be minimized, and loss can be reduced. Can do.

  Further, since the metal block 7 and the heat spreader 5 having a predetermined thickness are provided so as to sandwich the upper and lower sides of the power semiconductor element 4, the power semiconductor element 4 is not warped and stress on the solder can be reduced. The thickness of each metal block 7 is preferably about 1 to 5 mm, and the thickness difference between the metal block 7 and the heat spreader 5 is preferably 1 to 2 mm or less.

  In the first embodiment, independent metal blocks 7 are mounted on the two power semiconductor elements 4 of IGBT and FwDi, and a bus bar (not shown) is provided outside the power semiconductor device. If the upper electrode patterns 100 of FwDi are electrically connected to each other, wiring can be performed with a simpler structure than when wiring is formed inside the apparatus. Further, by incorporating this power semiconductor device in the wiring of the device incorporating the power semiconductor device, the wiring between the IGBT and FwDi is not necessary, and the number of members can be reduced.

  In addition, if a large number of metal blocks 7 soldered to the upper part of the power semiconductor element 4 via the solder layer 1000 are manufactured and then soldered to the heat spreader 5 via the solder layer 1001, the power semiconductor element 4 is handled. It becomes easy and convenient in terms of productivity.

  A second upper surface electrode pattern (not shown) selectively formed for driving the IGBT is provided on the same surface as the upper surface electrode pattern 100 of the IGBT, and the second upper surface electrode pattern is formed of a metal wire ( (Not shown). The end of the metal wire, which is different from the end connected to the second upper surface electrode pattern, protrudes from the same surface as the surface of the power semiconductor device having the exposed surface of the metal block 7, and is not shown in the drawing. Connected to.

  Since a plurality of second upper surface electrode patterns are formed on one IGBT, the plurality of metal wires are supported while being insulated by a resin support member (not shown). The resin support member as the support member is positioned and fixed to, for example, the heat spreader 5, and positioning means (not shown) for positioning and fixing is provided in both the resin support member and the heat spreader 5. The metal wire can be fixed with high accuracy. In this manner, the plurality of second upper surface electrode patterns and the metal wires are bonded together and are integrally held with the other members by the mold resin 9.

  Further, as shown in FIG. 3, a structure may be adopted in which the upper electrode pattern 100 of IGBT or FwDi is wired by bonding the same metal block 14. In this case, since the number of connection points with the wiring in the equipment outside the apparatus is reduced, workability and reliability are improved.

  Further, the metal block 14 housed in the power semiconductor device, the power semiconductor element 4 and the mold resin 9 are greatly different in linear expansion coefficient and thus warp. According to the structure shown in FIG. 3, since the metal block 14 and the heat spreader 5 having large areas on the top and bottom are sandwiched with the power semiconductor element 4 interposed therebetween, occurrence of warping of the package can be reduced. The metal block 14 provided on the upper surface electrode pattern 100 can control the wetting and spreading of the solder by forming a recess except for the area to be soldered, as indicated by the dotted line in FIG.

  Further, as shown in FIG. 4, the metal block 7 having the male screw portion 16 is joined to the upper surface electrode pattern 100 of the power semiconductor element 4 so that the male screw portion 16 is on the opposite side of the power semiconductor element 4. The male screw portion 16 may be molded with the molding resin 9 so as to protrude outside the power semiconductor device. At this time, the male screw portion 16 is similarly formed on the exposed surface of the mold resin 9 of the metal block 12. In this case, as in FIG. 2, a bus bar (lead piece 102) is provided outside the apparatus and the IGBT and FwDi upper surface electrode pattern 100 are connected. However, rationalization is possible because it can also serve as the wiring of the device.

  FIG. 5 shows the metal blocks 7 and 12 soldered to the upper surface electrode pattern 100 of IGBT and FwDi, and the metal block fixing guide 18 as an insulating member made of resin fixed to the heat spreader 5. It is. The metal block fixing guide 18 is assembled so as to be placed on the heat spreader 5. The metal block fixing guide 18 and the metal blocks 7 and 12 and the heat spreader 5 may be assembled. Alternatively, the metal blocks 7 and 12 may be assembled with the metal block fixing guide 18 after being insert-molded in advance, and then assembled with the heat spreader. The metal blocks 7 and 12 and the heat spreader 5 may be integrally formed by insert molding. 5 shows the case where the female screw portion 11 is formed on the upper surfaces of the metal blocks 7 and 12, the male screw portion 16 may be provided.

  In this case, the exposed surfaces of the plurality of metal blocks 7 and 12 can be formed so as to have the same height with respect to the surface of the metal block fixing guide 18 that contacts the heat spreader 5. Therefore, when the resin box body is manufactured by molding, the exposed surfaces of the metal blocks 7 and 12 are the same surface, and can be exposed in contact with the mold.

  The metal block fixing guide 18 is almost completely covered with the mold resin 9 as shown in FIG. By doing so, the interface between the resins does not appear to the outside, so that the intrusion of moisture can be suppressed and the reliability is improved. In particular, since a high voltage is applied between the metal blocks, it is preferable to enclose the metal block fixing guide 18 in the mold resin 9 in order to ensure insulation reliability between the metal blocks.

  Although the metal blocks 7 and 12 are simple rectangular parallelepipeds (cross sections) in FIG. 4, they may be as shown in FIG. 6, for example. That is, the metal block 19 having a T-shaped step as in the structure of FIG. 6B may be used instead of the structure of FIG. In this way, while ensuring a creepage distance between the metal block 19 connected to the upper electrode pattern 100 and the heat spreader 5 connected to the lower electrode pattern 101, the cross-sectional area of the current path (the metal block parallel to the upper electrode) 19 cross-sectional area) can be increased, and resistance loss can be reduced. Further, the gold fastening strength can be improved.

  The fastening strength can be improved by providing grooves or linear protrusions on the metal block 7 in the direction perpendicular to the fastening rotation direction from the center to the outside of the metal block 7, and further, the surface of the metal block 7 is roughened. It can also be realized by processing.

  Moreover, you may form the back surface of the metal block 7, and the soldering surface with the upper surface electrode pattern 100 as shown in FIG. That is, the protrusion 20 can be formed like the structure of FIG. 7B with respect to the structure of FIG. The protrusion 20 may be formed once or may be formed at a plurality of locations.

  By forming the protrusion 20, the thickness of the solder layer 1000 between the metal block 7 and the upper surface electrode pattern 100 can be controlled, and the parallelism of the surface on which the female screw portion 11 of the metal block 7 is formed is improved. To do. In the first embodiment, the protrusion 20 is formed integrally with the metal block 7. However, a separate spacer may be interposed between the metal block 7 and the upper surface electrode pattern 100. The same applies to the surface of the heat spreader 5 to be soldered to the lower surface electrode pattern 101 of the power semiconductor element 4.

  When the parallelism of the surface on which the female screw part 11 is formed is improved, the adhesion with the mold is improved at the time of molding, and the mold resin 9 can be prevented from entering the connecting means part such as the female screw part 11, The manufacturing quality of the power semiconductor device is improved.

<A-2. Effect>
According to the first embodiment of the present invention, in the power semiconductor device, power is supplied via the power semiconductor element 4 and the upper surface electrode pattern 100 as the first upper surface electrode pattern selectively formed on the upper surface of the power semiconductor element 4. A metal block 7 as a first metal block connected to the semiconductor element 4 and a mold resin 9 filled so as to cover the power semiconductor element 4 and the metal block 7 are provided. By exposing from the surface of the resin 9, wiring can be drawn from the upper surface of the power semiconductor device, and the increase in size of the device can be suppressed.

  Further, since the wiring length to the outside of the device can be shortened, the inductance due to the wiring can be reduced and the wiring loss can be minimized, so that a power semiconductor device with low heat generation can be provided.

  Moreover, the power semiconductor device has a structure in which the mold resin 9 is completely filled, so that the rigidity of the power semiconductor device is improved.

  Further, the wiring from the metal block 7 and the wiring from the metal block 12 can be integrally handled by, for example, the same substrate disposed above the power semiconductor device.

  Further, according to the first embodiment of the present invention, in the power semiconductor device, a part of the upper surface is connected to the power semiconductor element 4 via the lower surface electrode pattern 101 formed on the lower surface of the power semiconductor element 4, and The heat spreader 5 as the second metal block covered with the mold resin 9 and the metal block 12 as the third metal block connected to the other part of the upper surface of the heat spreader 5 are further provided. Since the upper surface is exposed from the surface of the mold resin 9, the heat semiconductor device 4 is improved in heat dissipation, and the power semiconductor element 4 is sandwiched from above and below, thereby suppressing the warpage of the power semiconductor element 4. In addition, the stress on the solder can be reduced.

  Further, according to the first embodiment of the present invention, in the power semiconductor device, the metal blocks 7 and 12 as the first and third metal blocks are integrally connected and the heat spreader 5 as the second metal block is connected. By further including a metal block fixing guide 18 as an insulating member arranged so as to be supported by the heat spreader 5, the exposed surfaces of the metal blocks 7 and 12 can be formed at the same height with respect to the surface of the heat spreader 5. It is possible to prevent the resin from flowing into the surfaces of the metal blocks 7 and 12 during molding.

  In addition, the space on the upper surface of the power semiconductor device can be effectively used to make the device thinner.

  According to the first embodiment of the present invention, in the power semiconductor device, the metal block 7 as the first metal block and the metal block 12 as the third metal block include the female screw portion 11 on the upper surface. Thus, connection to the outside of the power semiconductor device can be performed with the shortest distance, and wiring resistance and inductance can be minimized.

  According to the first embodiment of the present invention, in the power semiconductor device, the metal block 7 as the first metal block and the metal block 12 as the third metal block include the male screw portion 16 on the upper surface. Thus, connection to the outside of the power semiconductor device can be performed with the shortest distance, and wiring resistance and inductance can be minimized.

  Further, the thickness for inserting the bolt is not necessary, and the power semiconductor device can be reduced in height.

<B. Second Embodiment>
<B-1. Configuration>
FIG. 8 is a diagram showing a power semiconductor device for explaining the second embodiment of the present invention. One end of each of the upper electrode pattern 100 of the IGBT and FwDi that is the power semiconductor element 4 and the heat spreader 5, the metal lead 21 as the first metal lead, and the metal lead 103 as the second metal lead are solder layers 1000 and 1001. The other end protrudes from the upper surface of the power semiconductor device (FIG. 8A). Then, the mold resin 9 is filled so as to cover the power semiconductor element 4 and one end of each of the metal leads 21 and 103.

  A metal block 24 (nut) as a first metal block and a third metal block are formed on a part of the upper surface of the power semiconductor device on the inner side in plan view from the protruding portions of the metal leads 21 and 103 of the mold resin 9. An insertion hole 22 as a recess for inserting the metal block 107 (nut) is formed, and the metal blocks 24 and 107 are inserted into the insertion hole 22 (FIG. 8B).

  A part of the heat spreader 5 as the second metal block is soldered and fixed to the lower surface electrode pattern 101 of the power semiconductor element 4 via the solder layer 1001, and the metal block 107 is fixed to the heat spreader via the metal lead 103. 5 is formed above.

  A hole 23 is formed in the other end (protruded portion) of the metal leads 21 and 103, and the inside of the power semiconductor device, that is, the metal block 24, so as to be substantially parallel to the upper surface of the resin box. The metal blocks 24 and 107 are bent so as to contact the upper surfaces of the metal blocks 24 and 107, and the hole portions 23 of the metal leads 21 and 103 are aligned with the female screw portions 108 of the metal blocks 24 and 107 (FIG. 8). (C)). The metal leads 21 and 103 pass through the side of the metal blocks 24 and 107 until reaching the upper surfaces of the metal blocks 24 and 107.

  In the case of FIG. 1 of the first embodiment, it is necessary to design the dimensional accuracy with high accuracy in order to seal the connection portions of the metal blocks 7 and 12 at the time of molding, but as shown in FIG. In Form 2, since the connection portion is formed after molding, highly accurate dimensional design and mold design are not required, and the structure in which the power semiconductor element 4 is led out from the apparatus to the outside is dramatically improved in productivity. Therefore, it is very useful industrially.

  By providing the metal blocks 24 and 107 inside the plan view on the surface of the power semiconductor device rather than the protruding portions of the metal leads 21 and 103, the area above the IGBT and FwDi can be used effectively, and compactness can be realized. . Further, since the upper portion of the power semiconductor device can be formed with external wiring, the entire device can be made compact. At this time, it is possible to secure rigidity at the time of fastening by using a resin box that is densely filled with resin so as to support the metal blocks 24 and 107. In addition, the female screw part 108 of the metal blocks 24 and 107 is formed with a depth that allows a bolt to be inserted at the time of fastening.

  A bent portion 25 when the metal lead 21 is bent is bent so that the metal leads 21 and 103 are accommodated in a groove 104 formed on the mold resin 9 side and having a thickness of the metal leads 21 and 103. Therefore, after bending, the metal leads 21 and 103 are positioned by the grooves 104, and displacement from the metal blocks 24 and 107 can be prevented.

  Further, the groove 104 can be formed so as to be slightly deeply inclined from the bent portion 25 toward the metal blocks 24 and 107, and even if a springback after bending occurs on the surface of the mold resin 9, It can be held substantially parallel to the upper surface of the power semiconductor device.

  In the power semiconductor device shown in FIG. 9, metal blocks 24 and 107 and bolts 26 are inserted into insertion holes 22 formed in a part of the upper surface of the power semiconductor device (FIG. 9A). The protruding portions of the metal leads 27 and 200 are bent so as to be in contact with the upper surfaces of the metal blocks 24 and 107 so as to be substantially parallel to the upper surface of the resin box on the bolt 26 side (FIG. 9B). At this time, as shown in FIG. 10, a crab claw-shaped opening 29 is formed at the tip of the protruding portion of the metal leads 27, 200. When being bent, the bolt 26 is inserted into the opening 29 and bent so that the surfaces of the metal leads 27 and 200 are substantially parallel to the seat surface of the bolt 26.

  Thus, by using the fastening portion as the bolt 26 seating surface, the depth of the insertion hole 22 to be inserted can be reduced. Therefore, it is effective for reducing the thickness of the power semiconductor device.

<B-2. Effect>
According to the second embodiment of the present invention, in the power semiconductor device, the power semiconductor element 4 and the first metal lead having one end connected to the power semiconductor element 4 and the other end led out above the power semiconductor element 4. The metal leads 21 and 27, and the mold resin 9 that covers and fills the power semiconductor element 4 and one end side of the metal leads 21 and 27, and has an insertion hole 22 as a recess above the power semiconductor element 4; And the metal block 24 (nut) as the first metal block accommodated in the insertion hole 22, and the other ends of the metal leads 21 and 27 are bent and connected to the upper surface of the metal block 24. An increase in size can be suppressed.

  In addition, since the metal leads 21 and 27 and the metal block 24 are connected after molding, the positional deviation between the metal leads 21 and 27 and the metal block 24 can be adjusted, and a highly accurate dimensional design is possible. Since the mold design is unnecessary, productivity can be improved.

  When trying to form a connection between the metal leads 21 and 27 and the metal block 24 at the time of molding, it is difficult to match the height of the surface of the metal block 24 and the surface of the mold resin 9, so that the connection is difficult. Although there was a possibility that the mold resin 9 may flow into the part, in the present invention, since the connection is performed after molding in a form along the upper surface of the resin box body, the problem of poor contact and assembly failure due to inflow of the mold resin 9 is solved. Yes.

  Moreover, the power semiconductor device has a structure in which the mold resin 9 is completely filled, so that the rigidity of the power semiconductor device is improved.

  In addition, the wiring from the metal block 24 and the wiring from the metal block 107 can be integrally handled by the same substrate disposed, for example, above the power semiconductor device.

  Further, according to the second embodiment of the present invention, in the power semiconductor device, the metal leads 21 and 27 as the first metal leads pass through the side of the metal block 24 as the first metal block, and the mold resin 9 By being bent in the direction toward the metal block 24 on the surface, the space above the power semiconductor element 4 can be used effectively, and the apparatus can be made compact.

  Further, according to the second embodiment of the present invention, in the power semiconductor device, a part of the upper surface is connected to the power semiconductor element 4 via the lower surface electrode pattern 101 formed on the lower surface of the power semiconductor element 4, and A heat spreader 5 which is a second metal block covered with the mold resin 9 and a second metal lead which is formed in a recess provided in the mold resin 9 above the heat spreader 5 and whose one end side is covered with the mold resin 9. A metal block 107, which is a third metal block, is connected to another part of the upper surface of the heat spreader 5 via the metal leads 103, 200. The metal leads 103, 200 are connected to the upper surface of the metal block 107. The end of the other end of the power semiconductor device is exposed from the surface of the mold resin 9 to improve the heat dissipation of the power semiconductor device and Since the structure that sandwiches a-semiconductor element 4 from above and below, to suppress the occurrence of warpage of the power semiconductor element 4, it is possible to reduce the stress on the solder.

<C. Embodiment 3>
<C-1. Configuration>
FIG. 11 is a diagram illustrating a state in which the wiring board 106 is attached above the power semiconductor device of FIG. The wiring board 106 is provided with a main wiring 30 through which a current from the power semiconductor element 4 flows. The wiring substrate 106 forms wiring between the power semiconductor device and the device, and the wiring can be formed in multiple layers. Further, the base material of the wiring board 106 can ensure insulation between wirings by using a resin such as glass epoxy, PBT, or PPS. Furthermore, if necessary, a shield layer 31 as a metal layer for shielding noise from the power semiconductor element 4 may be provided. The shield layer 31 can be formed so as to surround the metal blocks 7 and 12 in plan view. By doing so, there is no need to provide a separate shield plate.

  A wiring board 106 is mounted on and connected to the metal blocks 7 and 12. The metal blocks 7 and 12 are fastened to the main wiring 30 of the wiring board 106 with bolts and screws 105 to establish electrical connection. The wiring board 106 is provided so as to be in contact with the upper surface of the power semiconductor device, whereby a thin wiring connection structure can be realized.

  On the other hand, a metal wire (not shown) connected to the second upper surface electrode pattern via a support member protrudes from the power semiconductor device from the same surface as the exposed surface of the metal blocks 7 and 12, but the wiring board You may make it connect to the control board which comprises the control circuit which is not shown in figure above 106. FIG. Alternatively, the wiring board 106 may be provided with wirings that constitute part or all of the control circuit. By doing so, the wiring portion of the control circuit can be rationalized. Further, a gate resistance wiring or the like that should be provided as close to the power semiconductor element 4 as possible can be provided on the wiring substrate 106.

  11 shows the structure in the case of the first embodiment using the metal blocks 7 and 12, the metal blocks 24 and 107 (nuts), the metal leads 21, and the like as shown in the second embodiment. In the structure using 103, 27, and 200, the wiring board 106 can be similarly provided, and in this case, the same effect can be obtained.

<C-2. Effect>
According to the third embodiment of the present invention, in the power semiconductor device, the metal block 7 as the first metal block, the metal block 24, the metal block 12 as the third metal block, the mold resin 9 above the metal block 107. It is possible to realize a thin wiring connection structure by further including the wiring block 106 disposed on the metal block 7, the metal block 24, the metal block 12 as the third metal block, and the metal block 107. it can.

  Further, according to the third embodiment of the present invention, in the power semiconductor device, the wiring board 106 includes the metal block 7 as the first metal block, the metal block 24, the metal block 12 as the third metal block, and the metal block. The power semiconductor element 4 can be protected from noise by including the shield layer 31 as a metal layer so as to surround the 107 in a plan view. Further, it is not necessary to provide a separate shield plate.

  According to the third embodiment of the present invention, in the power semiconductor device, the second upper surface electrode pattern formed on the upper surface of the power semiconductor element 4 and the second upper surface electrode pattern supported by the support member and connected. Further, the support member is fixed to the heat spreader 5 that is the second metal block, and the wiring board 106 is connected to the metal wire, thereby suppressing the increase in size of the apparatus.

<D. Embodiment 4>
<D-1. Configuration>
FIG. 12 is an enlarged view of part A of the power semiconductor device described in FIG. On the surface of the mold resin 9, a protrusion 32 (FIG. 12A) or a groove 33 (FIG. 12B) is formed around the upper surface of the metal block 7. These protrusions 32 and grooves 33 are formed so as to surround the metal block 7.

  A high voltage is applied to the metal block 7 having the same potential as the upper surface electrode pattern 100 of the power semiconductor element 4 when the power semiconductor device or the device is operated. Therefore, a distance is required to keep insulation between peripheral members or wiring members having different potentials, and an increase in size is required for securing the distance. On the other hand, by forming the projecting portion 32 or the groove portion 33 between the metal block 7 and another wiring member or the ground, a necessary creepage distance can be taken, and there is no need to increase the size of the device. .

  FIG. 13 is an enlarged view of a portion B of the power semiconductor device of FIG. 2, and a protruding portion 34 or a groove portion is provided between the metal block 7 and the signal terminal 109 connected to the end portion of the outsert fixing guide 13. 35 is formed.

  The signal terminal 109 includes a gate electrode for driving the gate or a sense terminal for detecting current and temperature, and these have a much smaller voltage than the upper electrode pattern 100 or the lower electrode pattern 101 of the power semiconductor element. . On the other hand, since the voltage of the upper surface electrode pattern 100 or the lower surface electrode pattern 101 of the power semiconductor element 4 is high, the projecting portion 34 or the groove portion 35 is formed between them, thereby suppressing the increase in size of the power semiconductor device and insulation. A distance can be secured.

  Note that the present invention is very useful, particularly in a power semiconductor device that is required to be compact and lightweight, such as in-vehicle use, because the size of the power semiconductor device can be kept almost in the projected area of the mold resin.

  In any of the embodiments, a power semiconductor device having a more compact and high output can be realized by using a power semiconductor element made of silicon carbide at least in part. In this case, a combination of FwDi and MOSFET is used. However, silicon carbide may be used only for FwDi, or all may be silicon carbide including MOSFET.

<D-2. Effect>
According to the fourth embodiment of the present invention, in the power semiconductor device, the protrusions 32 and 34 or the grooves 33 and 35 formed around the upper surface of the metal block 7 as the first metal block are formed on the surface of the mold resin 9. Furthermore, by providing, the creepage distance required in order to maintain the insulation with the metal block 7 and a peripheral member can be ensured, and the enlargement of an apparatus can be suppressed.

  1, 2, 3 circuit, 4 power semiconductor element, 5 heat spreader, 6 insulating sheet, 7, 12, 14, 19, 24, 107 metal block, 8 plate, 9 mold resin, 11, 108 female thread, 13 outsert Fixing guide, 16 Male thread part, 18 Metal block fixing guide, 20 Protrusion, 21, 27, 103, 200 Metal lead, 22 Insertion hole, 23 hole part, 25 Bending part, 26 Bolt, 29 Opening part, 30 Main wiring, 31 Shield layer, 32, 34 Projection, 33, 35 Groove, 100 Top electrode pattern, 101 Bottom electrode pattern, 102 Lead piece, 104 Groove, 105 Screw, 106 Wiring board, 109 Signal terminal, 1000, 1001 Solder layer.

Claims (6)

A power semiconductor element;
A first metal lead having one end connected to the power semiconductor element and the other end led out above the power semiconductor element;
A mold resin which covers and fills the power semiconductor element and the one end side of the first metal lead, and has a recess formed above the power semiconductor element;
A first metal block housed in the recess,
The other end side of the first metal lead is bent and connected to the upper surface of the first metal block ,
A second metal block in which a part of the upper surface is connected to the power semiconductor element through a lower surface electrode pattern formed on the lower surface of the power semiconductor element and covered with the molding resin;
Another part of the upper surface of the second metal block is formed in a recess provided in the mold resin above the second metal block, and a second metal lead having one end side covered with the mold resin. A third metal block connected,
The second metal lead has an end on the other end side connected to the upper surface of the third metal block exposed from the surface of the mold resin,
The first and third metal blocks are provided with a male screw portion on the upper surface thereof .
Power semiconductor device. The first metal lead is formed by being bent in a direction toward the first metal block on a surface of the mold resin through a side of the first metal block.
The power semiconductor device according to claim 1. A wiring board disposed on the mold resin above the first and third metal blocks and connected to the first and third metal blocks ;
The power semiconductor device according to claim 1 or 2. The wiring board includes a metal layer so as to surround the first and third metal blocks in a plan view .
The power semiconductor device according to claim 3. A second upper surface electrode pattern formed on the upper surface of the power semiconductor element;
The second upper surface electrode pattern further comprises a metal wire supported and connected by a support member,
The support member is fixed to the second metal block;
The wiring board is connected to the metal wire ,
The power semiconductor device according to claim 3 or 4 . At least a part of the power semiconductor element is made of silicon carbide .
The power semiconductor device according to any one of claims 1 to 5 .

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