JP5613590B2 - 有機elデバイス - Google Patents
有機elデバイス Download PDFInfo
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- JP5613590B2 JP5613590B2 JP2011037429A JP2011037429A JP5613590B2 JP 5613590 B2 JP5613590 B2 JP 5613590B2 JP 2011037429 A JP2011037429 A JP 2011037429A JP 2011037429 A JP2011037429 A JP 2011037429A JP 5613590 B2 JP5613590 B2 JP 5613590B2
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- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
Description
2 第1の基板
21 陰極層(第1の電極層)
22 平滑化層
23 バリア層
3 有機層
4 陽極層(第2の電極層)
40a 陽極取出し部(第2の電極取出し部)
40b 陰極取出し部(第1の電極取出し部)
41 主電極部
41’ グリッド電極
42 補助電極部
43 細線材
5 接着層
6 第2の基板
7 絶縁層
8 吸湿層
9 封止材
9’ 封止材
Claims (7)
- 第1の電極層及びこの第1の電極層を平滑化する平滑化層を有する第1の基板と、前記第1の基板の第1の電極層上に形成された有機層と、前記有機層上に形成された第2の電極層と、接着層を介して前記第2の電極層と接合される第2の基板と、を備え、
前記有機層は、前記第1の基板の周縁部のいずれかの領域には形成されておらず、
前記第2の電極層は、前記有機層の形成されていない領域に対応する部分において前記第1の電極層との間に絶縁層を介して前記有機層のある領域より外周側に延設されており、
前記第1の基板のうち、前記有機層の形成されていない領域であって前記第2の電極層が延設されていない部分に位置する第1の電極層が、前記第2の基板とは反対側に折り返されて、第1の電極取出し部を構成し、
前記延設された第2の電極層が、前記絶縁層と共に前記第2の基板とは反対側に折り返されて、第2の電極取出し部を構成していることを特徴とする有機ELデバイス。 - 前記第1の基板は、前記平滑化層の、前記第1の電極層とは反対側の面にバリア層が設けられていることを特徴とする請求項1に記載の有機ELデバイス。
- 前記第2の電極取出し部における前記第2の電極層は、その端部が前記第1の基板と短絡しないように、前記絶縁層よりも内側になるように形成されていることを特徴とする請求項1又は請求項2に記載の有機ELデバイス。
- 前記第2の基板のうち、前記第2の電極層と向かい合う面には、前記有機層が形成される領域と重なり合わないように、且つ前記第2の電極層と接触しないように、吸湿層が設けられていることを特徴とする請求項1乃至請求項3のいずれか一項に記載の有機ELデバイス。
- 前記第1の電極取出し部及び前記第2の電極取出し部は、前記第1の電極層及び前記第2の電極層の一部を除いて封止材によって封止されていることを特徴とする請求項1乃至請求項4のいずれか一項に記載の有機ELデバイス。
- 前記封止材の一部は、前記接着層が延設されたものであることを特徴とする請求項5に記載の有機ELデバイス。
- 前記封止材は、前記接着層とは別部材であることを特徴とする請求項5に記載の有機ELデバイス。
Priority Applications (5)
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JP2011037429A JP5613590B2 (ja) | 2011-02-23 | 2011-02-23 | 有機elデバイス |
CN201180037722.9A CN103053219B (zh) | 2011-02-23 | 2011-12-16 | 有机电致发光器件 |
US13/812,659 US8704443B2 (en) | 2011-02-23 | 2011-12-16 | Organic EL device |
PCT/JP2011/079200 WO2012114617A1 (ja) | 2011-02-23 | 2011-12-16 | 有機elデバイス |
TW100148021A TW201244201A (en) | 2011-02-23 | 2011-12-22 | Organic electroluminescence device |
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JP2011037429A JP5613590B2 (ja) | 2011-02-23 | 2011-02-23 | 有機elデバイス |
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JP5613590B2 true JP5613590B2 (ja) | 2014-10-29 |
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JP (1) | JP5613590B2 (ja) |
CN (1) | CN103053219B (ja) |
TW (1) | TW201244201A (ja) |
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JP6383682B2 (ja) * | 2015-02-26 | 2018-08-29 | 富士フイルム株式会社 | 有機エレクトロルミネッセンス装置 |
KR102649238B1 (ko) * | 2016-10-26 | 2024-03-21 | 삼성디스플레이 주식회사 | 표시패널, 이를 포함하는 적층 기판, 및 표시패널 제조방법 |
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JPH09129369A (ja) * | 1995-10-31 | 1997-05-16 | Nippon Seiki Co Ltd | 電界発光素子及びその製造方法 |
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- 2011-12-16 WO PCT/JP2011/079200 patent/WO2012114617A1/ja active Application Filing
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- 2011-12-16 CN CN201180037722.9A patent/CN103053219B/zh active Active
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US8704443B2 (en) | 2014-04-22 |
TW201244201A (en) | 2012-11-01 |
CN103053219A (zh) | 2013-04-17 |
US20130126854A1 (en) | 2013-05-23 |
CN103053219B (zh) | 2016-11-09 |
WO2012114617A1 (ja) | 2012-08-30 |
JP2012174605A (ja) | 2012-09-10 |
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