JP5608320B2 - 有機el表示装置 - Google Patents
有機el表示装置 Download PDFInfo
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- JP5608320B2 JP5608320B2 JP2008179066A JP2008179066A JP5608320B2 JP 5608320 B2 JP5608320 B2 JP 5608320B2 JP 2008179066 A JP2008179066 A JP 2008179066A JP 2008179066 A JP2008179066 A JP 2008179066A JP 5608320 B2 JP5608320 B2 JP 5608320B2
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- 238000000295 emission spectrum Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 126
- 239000010410 layer Substances 0.000 description 78
- 238000004544 sputter deposition Methods 0.000 description 15
- 238000002161 passivation Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 230000031700 light absorption Effects 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000007983 Tris buffer Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 150000001454 anthracenes Chemical class 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- CFNMUZCFSDMZPQ-GHXNOFRVSA-N 7-[(z)-3-methyl-4-(4-methyl-5-oxo-2h-furan-2-yl)but-2-enoxy]chromen-2-one Chemical compound C=1C=C2C=CC(=O)OC2=CC=1OC/C=C(/C)CC1OC(=O)C(C)=C1 CFNMUZCFSDMZPQ-GHXNOFRVSA-N 0.000 description 1
- -1 8-hydroxy-5-quinolinyl Chemical group 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical class OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 125000004309 pyranyl group Chemical class O1C(C=CC=C1)* 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
吸収され、輝度が低下することである。他の問題は、上部電極を厚くした場合、上部電極内における光の干渉によって、特定波長の光を外部に取り出すことが困難になるという現象が存在するということである。
Claims (6)
- 上部電極と下部電極によって挟持された赤色発光をする有機EL層を有する複数の赤画素と、上部電極と下部電極によって挟持された緑色発光をする有機EL層を有する複数の緑画素と、上部電極と下部電極によって挟持された青色発光をする有機EL層を有する複数の青画素とが形成された画面を有するトップエミッション型有機EL表示装置であって、
前記複数の赤画素に流す電流の合計を50mA、前記複数の緑画素に流す電流の合計を50mA、前記複数の青画素に流す電流の合計を50mAとしたときに、前記画面における輝度の傾斜が10%以内であり、前記赤画素の前記上部電極の膜厚と、前記緑画素の前記上部電極の膜厚は等しく、前記青画素の前記上部電極の膜厚は、前記赤画素の前記上部電極の膜厚または前記緑画素の前記上部電極の膜厚の1/10以下であり、
前記赤画素および前記緑画素の前記上部電極は2層構造となっていることを特徴とする有機EL表示装置。 - 前記青画素の前記上部電極の膜厚をTB、前記赤画素の前記上部電極の膜厚をTR、前記緑画素の前記上部電極の膜厚をTGとしたとき、TRおよびTGはTBの10倍以上であることを特徴とする請求項1に記載の有機EL表示装置。
- 上部電極と下部電極によって挟持された赤色発光をする有機EL層を有する複数の赤画素と、上部電極と下部電極によって挟持された緑色発光をする有機EL層を有する複数の緑画素と、上部電極と下部電極によって挟持された青色発光をする有機EL層を有する複数の青画素とが形成された画面を有するトップエミッション型有機EL表示装置であって、
前記複数の赤画素に流す電流の合計を50mA、前記複数の緑画素に流す電流の合計を50mA、前記複数の青画素に流す電流の合計を50mAとし、前記赤画素、前記緑画素、前記青画素の前記上部電極の厚さが等しいときに、前記画面における輝度の傾斜が10%以内となる場合の各画素における前記上部電極の膜厚をTとし、
前記青画素の前記上部電極の膜厚をTB、前記赤画素の前記上部電極の膜厚をTR、前記緑画素の前記上部電極の膜厚をTGとし、
TB=TG<TRであり、TB=TG=TT1としたとき、
3T−2TT1≦TRであって、
かつ、前記赤画素においては、(式1)の関係を満たし、
前記赤画素の前記上部電極は2層構造となっていることを特徴とする有機EL表示装置。 - 上部電極と下部電極によって挟持された赤色発光をする有機EL層を有する複数の赤画素と、上部電極と下部電極によって挟持された緑色発光をする有機EL層を有する複数の緑画素と、上部電極と下部電極によって挟持された青色発光をする有機EL層を有する複数の青画素とが形成された画面を有するトップエミッション型有機EL表示装置であって、
前記複数の赤画素に流す電流の合計を50mA、前記複数の緑画素に流す電流の合計を50mA、前記複数の青画素に流す電流の合計を50mAとし、前記赤画素、前記緑画素、前記青画素の前記上部電極の厚さが等しいときに、前記画面における輝度の傾斜が10%以内となる場合の各画素における前記上部電極の膜厚をTとし、
前記青画素の前記上部電極の膜厚をTB、前記赤画素の前記上部電極の膜厚をTR、前記緑画素の前記上部電極の膜厚をTGとし、
TB=TR<TGあり、TB=TR=TT1としたとき、
3T−2TT1≦TGであって、
かつ、前記緑画素においては、(式1)の関係を満たし、
前記緑画素の前記上部電極は2層構造となっていることを特徴とする有機EL表示装置。 - 前記上部電極はIn、Zn、またはSnを主成分とする酸化物によって形成されていることを特徴とする請求項1〜4のいずれか1項に記載の有機EL表示装置。
- 前記上部電極はIZOによって形成されていることを特徴とする請求項1〜4のいずれか1項に記載の有機EL表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2008179066A JP5608320B2 (ja) | 2008-07-09 | 2008-07-09 | 有機el表示装置 |
US12/499,839 US8237353B2 (en) | 2008-07-09 | 2009-07-09 | Organic EL display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008179066A JP5608320B2 (ja) | 2008-07-09 | 2008-07-09 | 有機el表示装置 |
Publications (2)
Publication Number | Publication Date |
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JP2010020971A JP2010020971A (ja) | 2010-01-28 |
JP5608320B2 true JP5608320B2 (ja) | 2014-10-15 |
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Country Status (2)
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US (1) | US8237353B2 (ja) |
JP (1) | JP5608320B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010093068A (ja) * | 2008-10-08 | 2010-04-22 | Hitachi Displays Ltd | 有機el表示装置およびその製造方法 |
KR102227455B1 (ko) * | 2013-10-08 | 2021-03-11 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP6318665B2 (ja) | 2014-02-10 | 2018-05-09 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、電子機器 |
KR102312557B1 (ko) * | 2014-10-22 | 2021-10-13 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
JP6715708B2 (ja) | 2016-07-08 | 2020-07-01 | 株式会社ジャパンディスプレイ | 表示装置 |
US11211440B2 (en) | 2017-08-02 | 2021-12-28 | Sony Group Corporation | Display device, method of manufacturing display device, and electronic apparatus with contact electrode |
US11545541B2 (en) * | 2017-09-28 | 2023-01-03 | Sharp Kabushiki Kaisha | Display device including light emitting element including reflection electrode on which multiple metallic conductive layers are stacked and method for manufacturing same |
KR102457997B1 (ko) * | 2017-12-29 | 2022-10-21 | 엘지디스플레이 주식회사 | 전계 발광 표시장치 |
CN110767835B (zh) * | 2019-03-29 | 2021-01-26 | 昆山国显光电有限公司 | 透明显示面板、显示屏、显示装置及掩膜板 |
Family Cites Families (8)
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JP3714179B2 (ja) * | 2001-03-23 | 2005-11-09 | セイコーエプソン株式会社 | El素子、elディスプレイ、並びに電子機器 |
JP2002318553A (ja) * | 2001-04-20 | 2002-10-31 | Toshiba Corp | 自己発光型表示装置 |
JP2004265853A (ja) * | 2003-01-09 | 2004-09-24 | Seiko Epson Corp | 表示体および表示装置、並びに電子機器 |
US7221095B2 (en) * | 2003-06-16 | 2007-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for fabricating light emitting device |
KR100542993B1 (ko) * | 2003-07-26 | 2006-01-20 | 삼성에스디아이 주식회사 | 고효율 평판표시장치 및 그의 제조방법 |
JP4403399B2 (ja) * | 2003-09-19 | 2010-01-27 | ソニー株式会社 | 表示装置および表示装置の製造方法 |
JP4325643B2 (ja) | 2006-06-08 | 2009-09-02 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
JP5178088B2 (ja) * | 2006-09-07 | 2013-04-10 | キヤノン株式会社 | 有機発光装置 |
-
2008
- 2008-07-09 JP JP2008179066A patent/JP5608320B2/ja active Active
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2009
- 2009-07-09 US US12/499,839 patent/US8237353B2/en active Active
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Publication number | Publication date |
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JP2010020971A (ja) | 2010-01-28 |
US8237353B2 (en) | 2012-08-07 |
US20100007272A1 (en) | 2010-01-14 |
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