JP5605033B2 - 発光ダイオードの製造方法、切断方法及び発光ダイオード - Google Patents

発光ダイオードの製造方法、切断方法及び発光ダイオード Download PDF

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Publication number
JP5605033B2
JP5605033B2 JP2010156722A JP2010156722A JP5605033B2 JP 5605033 B2 JP5605033 B2 JP 5605033B2 JP 2010156722 A JP2010156722 A JP 2010156722A JP 2010156722 A JP2010156722 A JP 2010156722A JP 5605033 B2 JP5605033 B2 JP 5605033B2
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JP
Japan
Prior art keywords
layer
metal
light emitting
emitting diode
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010156722A
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English (en)
Japanese (ja)
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JP2012019137A (ja
Inventor
篤 松村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2010156722A priority Critical patent/JP5605033B2/ja
Priority to PCT/JP2011/065176 priority patent/WO2012005185A1/ja
Priority to TW100123969A priority patent/TWI489651B/zh
Publication of JP2012019137A publication Critical patent/JP2012019137A/ja
Application granted granted Critical
Publication of JP5605033B2 publication Critical patent/JP5605033B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
JP2010156722A 2010-07-09 2010-07-09 発光ダイオードの製造方法、切断方法及び発光ダイオード Active JP5605033B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010156722A JP5605033B2 (ja) 2010-07-09 2010-07-09 発光ダイオードの製造方法、切断方法及び発光ダイオード
PCT/JP2011/065176 WO2012005185A1 (ja) 2010-07-09 2011-07-01 発光ダイオードの製造方法、切断方法及び発光ダイオード
TW100123969A TWI489651B (zh) 2010-07-09 2011-07-07 發光二極體之製造方法及切斷方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010156722A JP5605033B2 (ja) 2010-07-09 2010-07-09 発光ダイオードの製造方法、切断方法及び発光ダイオード

Publications (2)

Publication Number Publication Date
JP2012019137A JP2012019137A (ja) 2012-01-26
JP5605033B2 true JP5605033B2 (ja) 2014-10-15

Family

ID=45441164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010156722A Active JP5605033B2 (ja) 2010-07-09 2010-07-09 発光ダイオードの製造方法、切断方法及び発光ダイオード

Country Status (3)

Country Link
JP (1) JP5605033B2 (zh)
TW (1) TWI489651B (zh)
WO (1) WO2012005185A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5792694B2 (ja) 2012-08-14 2015-10-14 株式会社東芝 半導体発光素子
KR101999315B1 (ko) * 2012-08-27 2019-07-11 엘지디스플레이 주식회사 유기발광표시장치 제조 방법 및 장치
JP6824581B2 (ja) * 2017-04-04 2021-02-03 株式会社ディスコ 加工方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207508A (ja) * 2002-12-25 2004-07-22 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
JP2007081010A (ja) * 2005-09-13 2007-03-29 Matsushita Electric Ind Co Ltd 発光素子
JP3862737B1 (ja) * 2005-10-18 2006-12-27 栄樹 津島 クラッド材およびその製造方法、クラッド材の成型方法、クラッド材を用いた放熱基板
CN101496165B (zh) * 2006-07-28 2011-01-19 京瓷株式会社 电子部件收容用封装件以及电子装置
US20080290349A1 (en) * 2007-05-24 2008-11-27 Hitachi Cable, Ltd. Compound semiconductor wafer, light emitting diode and manufacturing method thereof
JP2011082362A (ja) * 2009-10-07 2011-04-21 Showa Denko Kk 発光ダイオード用金属基板、発光ダイオード及びその製造方法

Also Published As

Publication number Publication date
WO2012005185A1 (ja) 2012-01-12
TW201210060A (en) 2012-03-01
TWI489651B (zh) 2015-06-21
JP2012019137A (ja) 2012-01-26

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