JP5601594B2 - オープン・ボリュームを含む選択デバイス、このデバイスを含むメモリ・デバイスおよびシステム、ならびにこのデバイスの形成方法 - Google Patents
オープン・ボリュームを含む選択デバイス、このデバイスを含むメモリ・デバイスおよびシステム、ならびにこのデバイスの形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 50
- 239000003989 dielectric material Substances 0.000 claims description 115
- 239000004020 conductor Substances 0.000 claims description 62
- 125000006850 spacer group Chemical group 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000012212 insulator Substances 0.000 description 22
- 230000036961 partial effect Effects 0.000 description 19
- 239000000758 substrate Substances 0.000 description 17
- 230000006870 function Effects 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 230000000670 limiting effect Effects 0.000 description 12
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000006399 behavior Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910001362 Ta alloys Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910001199 N alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/957—Making metal-insulator-metal device
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Description
本願は、出願日2008年11月19日、現在係属中の米国特許出願第12/274,181号、「SELECT DEVICES INCLUDING AN OPEN VOLUME, MEMORY DEVICES AND SYSTEMS INCLUDING SAME, AND MEHTODS FOR FORMING SAME」の優先権を主張する。
図6は、従来の選択デバイス601の電圧-電流密度特性と、図1Aおよび1Bに示す選択デバイス(102)等のオープン・ボリュームを含む選択デバイス602の 電圧-電流密度特性との比較を示す。選択デバイス601および602は、それぞれ、第1の絶縁体および第2の絶縁体により互いに離隔された第1の電極および第2の電極を含むことができる。第2の電極を覆って第1の絶縁体を設けることができ、第1の絶縁体と第1の電極との間に第2の絶縁体を設けることができ る。第1の電極は、仕事関数が約4.40の金属を含むことがあり、第2の電極は、仕事関数が約5.25の金属を含むことがあり、第2の絶縁体は、酸化ハフ ニウム(HfO2)および酸化ジルコニウム(ZrO2)を含むナノラミネート誘電体を含むことがある。従来の選択デバイス601が、二酸化シリコンを含む第1の絶縁体を含むことができるのに対して、選択デバイス602は、オープン・ボリュームを含む第1の絶縁体を含むことができる。
Claims (13)
- 選択デバイスを形成する方法であって、
金属の表面上に誘電材料を形成するステップと、
前記誘電材料上に他の誘電材料を形成するステップと、
前記他の誘電材料上に導電材料を形成するステップと、
前記導電材料、前記他の誘電材料、および前記誘電材料を通過して前記金属の前記表面まで延在する少なくとも1つの開口部を形成して、前記金属の前記表面上に複数の分離した構造体を形成するステップと、
前記誘電材料の一部分を除去して、前記複数の分離した構造体それぞれの前記他の誘電材料の一部分の下に延在する少なくとも1つのアンダーカットを形成するステップと、
前記複数の分離した構造体それぞれの側壁を覆ってスペーサを形成して、前記少なくとも1つのアンダーカットからオープンボリュームを形成するステップと、
を含む方法。 - 前記誘電材料の一部分を除去して、前記複数の分離した構造体それぞれの前記他の誘電材料の一部分の下に延在する少なくとも1つのアンダーカットを形成す る前記ステップが、等方性エッチングを行って、前記導電材料、前記他の誘電材料、および前記金属に対して前記誘電材料をアンダーカットするステップを含 む、請求項1に記載の方法。
- 等方性エッチングを行って、前記導電材料、前記他の誘電材料、および前記金属に対して前記誘電材料をアンダーカットする前記ステップが、前記誘電材料を アンダーカットして、前記他の誘電材料の下に横方向に約1nm〜約10nm延在する前記少なくとも1つのアンダーカットを形成するステップを含む、請求項 2に記載の方法。
- 前記誘電材料の一部分を除去して、前記複数の分離した構造体それぞれの前記他の誘電材料の一部分の下に延在する少なくとも1つのアンダーカットを形成す る前記ステップが、二酸化シリコン、アモルファス炭素、および酸化アルミニウムのうちの少なくとも1つからなる一部分を除去して、前記少なくとも1つのア ンダーカットを形成するステップを含む、請求項1に記載の方法。
- 前記複数の構造体の前記側壁を覆って前記スペーサを形成する前記ステップの前に、前記少なくとも1つのアンダーカットを犠牲材料で充填するステップを更に含む、請求項1に記載の方法。
- 前記複数の構造体の前記側壁を覆って前記スペーサを形成する前記ステップの後に、前記少なくとも1つのアンダーカット内の前記犠牲材料を除去するステップを更に含む、請求項5に記載の方法。
- 前記誘電材料の一部分を除去して、前記複数の分離した構造体それぞれの前記他の誘電材料の一部分の下に延在する少なくとも1つのアンダーカットを形成す る前記ステップが、前記誘電材料中に分散する複数のナノドットに対して選択的に、前記誘電材料を除去するステップを含む、請求項1に記載の方法。
- 前記誘電材料の一部分を除去して、前記複数の分離した構造体それぞれの前記他の誘電材料の一部分の下に延在する少なくとも1つのアンダーカットを形成する前記ステップが、前記誘電材料を実質的に全て除去するステップを含む、請求項1に記載の方法。
- 金属と、
前記金属の上に横たわる第1の誘電材料と、
前記第1の誘電材料の上に横たわる導電材料と、
前記金属の表面と、前記金属の前記表面に対向する前記第1の誘電材料の表面と、の間の第2の誘電材料と、
前記金属の前記表面と、前記金属の前記表面に対向する前記第1の誘電材料の前記表面と、前記第2の誘電材料の相対する側面と、前記導電材料の側壁及び前記第1の誘電材料の側壁と同一平面上にあるスペーサの表面と、によって少なくとも部分的に画定されたオープンボリュームと、
を備える選択デバイス。 - 前記オープンボリュームが、前記第2の誘電材料の周縁の周りに設けられている、請求項9に記載の選択デバイス。
- 前記オープンボリューム内に設けられた複数のナノドットを更に備える、請求項9に記載の選択デバイス。
- 少なくとも1つのメモリ素子と、
複数のビット線と、
少なくとも1つのワード線と、
少なくとも1つの選択デバイスと、
を備えるメモリデバイスであって、
前記少なくとも1つの選択デバイスは、
金属と、
前記金属上の第1の誘電材料と、
前記第1の誘電材料上の導電材料と、
前記金属と前記第1の誘電材料との間の第2の誘電材料と、
前記金属と前記第1の誘電材料との間にあって、かつ、前記第2の誘電材料の相対する側面と、前記導電材料の側壁及び前記第1の誘電材料の側壁と同一平面上にあるスペーサの表面と、によって少なくとも部分的に画定された、オープンボリュームと、
を備える、メモリデバイス。 - 少なくとも1つの電子信号プロセッサと、
前記少なくとも1つの電子信号プロセッサと電気的に通信するように構成された少なくとも1つのメモリデバイスであって、該少なくとも1つのメモリデバイスは少なくとも1つの選択デバイスを備え、該少なくとも1つの選択デバイスが、
金属と、
前記金属上の第1の誘電材料と、
前記第1の誘電材料上の導電材料と、
前記金属と前記第1の誘電材料との間の第2の誘電材料と、
前記第1の誘電材料と前記金属との間に延在し、かつ、前記第2の誘電材料の相対する側面と、前記導電材料の側壁及び前記第1の誘電材料の側壁と同一平面上にあるスペーサの表面と、によって少なくとも部分的に画定された、オープンボリュームと、
を含む、少なくとも1つのメモリデバイスと、
前記少なくとも1つの電子信号プロセッサと電気的に通信するように構成された入力デバイスおよび出力デバイスのうちの少なくとも1つと、
を備える電子システム。
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