JP5592255B2 - 強誘電体デバイスおよび可変調注入障壁 - Google Patents
強誘電体デバイスおよび可変調注入障壁 Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/202—Integrated devices comprising a common active layer
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Description
−第1の電極;
−第2の電極;およびこれらの電極に隣接した、
−強誘電体の半導体物質、すなわちPbTiO3、の薄膜。
(a)第1の電極層と、
(b)第2の電極層と、これらの電極層に接する
(c)記録層とを備え、この記録層が
(d)強誘電体物質を備える。
この記録層は第1および第2の電極層を互いに分離している。すなわち、この記録層はこれらの電極に挟まれており、この記録層は強誘電体物質(d)と
(e)半導体物質、との混合物を備える。
一般的には、本発明は電極層と半導体層との間に形成された可変調な注入障壁を提供する。「注入障壁」という用語は当業者には知られた用語であり、キャリア(電子またはホール)が電極から半導体物質にその接合部分で注入された時に克服すべきエネルギー差またはエネルギー障壁に関連する。
[図の説明]
清浄なガラス基板上に、最初に1nmのクロムとこれに続いて20−50nmの銀(または金)が蒸着される。次に溶液がスピンコートされ、記録媒体の薄膜が形成される。この堆積物は140℃で2時間真空オーブンでアニールされ、P(VDF−TrFE)副相の強誘電体相が強化される。次に金属電極が薄膜の上にシャドウマスクを用いて蒸着される。
最初に、2つの銀電極に強誘電体(P(VDF−TrFE))(65−35)のみを挟んだデバイスの特性を、Sawyer−Tower回路を用いて、明確にする。図2(a)は周波数100Hzで異なる電圧におけるこの強誘電体ポリマーの典型的なヒステリシスループを示す。保持電界は50MV/mであり、残留分極は60mC/m2である。
半導体に電荷を注入するためには、フェルミ準位が価電子帯または伝導帯に揃っている必要がある。フェルミ準位が揃っていないと、電荷キャリアの注入は非効率である。このため、デバイスの電流は少なく、電荷注入プロセスにより制限される。(図0)。本発明では、強誘電体の分極電荷が注入制限されたデバイスの半導体への電荷注入を強化することに用いられる。図1(a)では強誘電体物質と半導体の混合物が概略的に示されている。半導体の半導電性の浸透された経路は注入された電荷を他方の電極に輸送するためにある。非分極の強誘電体については、電極は半導体に効率的に電荷注入を行うことができない。しかしながら、強誘電体が分極されると、強誘電体の分極電荷が中和されるために電荷は半導体および/または金属電極に集積する(図1(c)参照)。これらの集積した電荷は強誘電体と半導体の接合部の近くで(数nm以内)、エネルギーバンドの強い曲がりを生じさせ、電荷注入を強化することになる。
Claims (18)
- 半導体素子における、可変調な注入障壁を提供するための半導体物質と強誘電体物質との混合物の使用であって、
前記可変調な注入障壁は電子またはホールが電極層から半導体物質に注入された時に克服すべきエネルギー障壁であって、前記電極層と前記半導体物質の接合部において、前記可変調な注入障壁は少なくとも1つの前記電極層と半導体層との間に形成され、前記半導体層は前記混合物からなり、前記注入障壁の変調は前記強誘電体物質の分極処理の変調により行われることを特徴とする使用。 - 請求項1に記載の使用であって、
前記強誘電体物質および前記半導体物質は有機物質であることを特徴とする使用。 - 請求項2に記載の使用であって、前記強誘電体物質および前記半導体物質はポリマー物質であることを特徴とする使用。
- 請求項3に記載の使用であって、
前記強誘電体物質は、ナイロン、またはポリフッ化ビニリデンと3フッ化エチレンとの共重合体であることを特徴とする使用。 - 請求項2または3に記載の使用であって、
前記半導体物質は、フラーレン、ピリレン、フタロシアニン、チオフェンのオリゴマー、フェニレン、およびフェニレンビニレンを含むグループから選択される有機物質であるかまたは、
ポリ3−アルキルチオフェン、ポリジアルコキシフェニレンビニレン、ポリアニリン、ポリチオフェン、ポリフェニレン、ポリフェニレンエチレン、ポリピロール、ポリフラン、ポリアセチレン、ポリアリーレンメチン、ポリイソチアナフテン、ポリフルオレンを含むグループから選択されるポリマー物質であることを特徴とする使用。 - 請求項2または3に記載の使用であって、
前記半導体物質は、部位不規則な(region−irregular)ポリ3−ヘキシルチオフェンrir−P3HTであることを特徴とする使用。 - 請求項2に記載の使用であって、
前記半導体物質と前記強誘電体物質の前記混合物は、半導電性ブロックおよび強誘電体ブロックを持つブロック共重合体を備えることを特徴とする使用。 - 請求項2に記載の使用であって、
前記半導体物質と前記強誘電体物質の前記混合物は、分離されたポリマー相を持つ相互貫入した高分子網目を備えることを特徴とする使用。 - 少なくとも1つの可変調な注入障壁を備える半導体素子であって、
前記注入障壁は少なくとも2つの電極層と半導体層との間に形成され、前記半導体層は半導体ポリマーと強誘電体ポリマーとの混合物からなり、前記混合物は少なくとも分極電荷が測定できる程度に十分な量の前記強誘電体ポリマーと、少なくとも前記混合物を通る経路で電荷キャリアが電極間を移動することができる程度に十分な量の前記半導体ポリマーとを備えることを特徴とする半導体素子。 - 請求項9に記載の半導体素子であって、
前記混合物は、前記強誘電体ポリマーと前記半導体ポリマーとが、前記半導体ポリマーの重量を1とした場合、前記強誘電体ポリマーの重量が1から1000の範囲の重量となるような重量比範囲で混合されていることを特徴とする半導体素子。 - 請求項10に記載の半導体素子であって、
前記重量比範囲は、前記半導体ポリマーの重量を1とした場合、前記強誘電体ポリマーの重量が10から100の範囲であることを特徴とする半導体素子。 - デバイスであって、
請求項9〜11のいずれか1項に記載の半導体素子を少なくとも1つ備えることを特徴とするデバイス。 - 請求項12に記載のデバイスであって、
前記デバイスは、前記混合物を絶縁層の上に活性層として備える3端子デバイスの形態であって、前記絶縁層はゲート電極と前記活性層との間に挟まれ、前記活性層にはソース電極とドレイン電極が設けられることを特徴とするデバイス。 - 請求項13に記載のデバイスであって、
前記デバイスは2端子の不揮発性プログラマブル抵抗器であり、
(a)第1の電極層と、
(b)第2の電極層と、前記両電極層に接する
(c)記録層とを備え、前記記録層は、
(d)強誘電体ポリマーからなり、
前記記録層には前記第1および第2の電極層を互いに分離し、前記記録層は前記強誘電体ポリマー(d)と、
(e)半導体ポリマーとの混合物からなることを特徴とするデバイス。 - 請求項12〜14のいずれか1項に記載のデバイスであって、
前記電極は、前記電極のフェルミ準位と前記半導体物質のフェルミ準位とが、価電子帯または伝導帯に揃っていない非オーミック接合を形成する金属で作製されていることを特徴とするデバイス。 - 請求項12から15のいずれか1項に記載のデバイスであって、
電極の遮断機を持つように作製されていることを特徴とするデバイス。 - 請求項12に記載のデバイスの使用であって、
前記可変調な注入障壁は、電荷キャリアの発光半導体への注入のスイッチをオンまたはオフする働きをすることを特徴とするデバイスの使用。 - 請求項9〜11のいずれか1項に記載の可変調な注入障壁を有する半導体素子を備えた有機またはポリマーメモリデバイスであって、前記有機またはポリマーメモリデバイスは、前記強誘電体ポリマーの分極作用により一方向だけに電流を流すように設定することを特徴とする有機またはポリマーメモリデバイス。
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EP07108645A EP1995736A1 (en) | 2007-05-22 | 2007-05-22 | Ferro-electric device and modulatable injection barrier |
EP07108645.8 | 2007-05-22 | ||
PCT/NL2008/050302 WO2008143509A1 (en) | 2007-05-22 | 2008-05-22 | Ferro-electric device and modulatable injection barrier |
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EP2192636A1 (en) * | 2008-11-26 | 2010-06-02 | Rijksuniversiteit Groningen | Modulatable light-emitting diode |
EP2437247A1 (en) | 2010-10-01 | 2012-04-04 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Display |
US8780607B2 (en) | 2011-09-16 | 2014-07-15 | Micron Technology, Inc. | Select devices for memory cell applications |
US9349445B2 (en) | 2011-09-16 | 2016-05-24 | Micron Technology, Inc. | Select devices for memory cell applications |
US9142767B2 (en) * | 2011-09-16 | 2015-09-22 | Micron Technology, Inc. | Resistive memory cell including integrated select device and storage element |
FR3004854B1 (fr) * | 2013-04-19 | 2015-04-17 | Arkema France | Dispositif de memoire ferroelectrique |
FR3008548B1 (fr) * | 2013-07-11 | 2016-12-09 | Arkema France | Procede de fabrication d'une couche active susceptible d'emettre un courant electrique sous irradiation |
EP2849244A1 (en) | 2013-09-13 | 2015-03-18 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Multicolour light-emitting diode, semiconductor display unit, and methods of manufacturing thereof |
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US6013950A (en) * | 1994-05-19 | 2000-01-11 | Sandia Corporation | Semiconductor diode with external field modulation |
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US6812509B2 (en) * | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
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US6753562B1 (en) * | 2003-03-27 | 2004-06-22 | Sharp Laboratories Of America, Inc. | Spin transistor magnetic random access memory device |
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US7388100B2 (en) * | 2004-07-16 | 2008-06-17 | Tetsuya Nishio | Tertiary amine compounds |
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US8089110B1 (en) * | 2006-02-09 | 2012-01-03 | Spansion Llc | Switchable memory diodes based on ferroelectric/conjugated polymer heterostructures and/or their composites |
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JP2010528471A (ja) | 2010-08-19 |
KR20100036257A (ko) | 2010-04-07 |
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