JP5589656B2 - センサーチップ、センサーカートリッジ及び分析装置 - Google Patents
センサーチップ、センサーカートリッジ及び分析装置 Download PDFInfo
- Publication number
- JP5589656B2 JP5589656B2 JP2010176427A JP2010176427A JP5589656B2 JP 5589656 B2 JP5589656 B2 JP 5589656B2 JP 2010176427 A JP2010176427 A JP 2010176427A JP 2010176427 A JP2010176427 A JP 2010176427A JP 5589656 B2 JP5589656 B2 JP 5589656B2
- Authority
- JP
- Japan
- Prior art keywords
- protrusion
- sensor chip
- convex shape
- base material
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 claims description 100
- 239000002184 metal Substances 0.000 claims description 100
- 239000013076 target substance Substances 0.000 claims description 98
- 239000000463 material Substances 0.000 claims description 69
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 49
- 239000010931 gold Substances 0.000 claims description 28
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims description 24
- 229910052709 silver Inorganic materials 0.000 claims description 19
- 229910052737 gold Inorganic materials 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 18
- 239000010419 fine particle Substances 0.000 claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 238000004458 analytical method Methods 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 41
- 238000000479 surface-enhanced Raman spectrum Methods 0.000 description 29
- 238000001069 Raman spectroscopy Methods 0.000 description 28
- 230000005684 electric field Effects 0.000 description 26
- 238000005259 measurement Methods 0.000 description 21
- 239000003574 free electron Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 239000002086 nanomaterial Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000002082 metal nanoparticle Substances 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 7
- 230000032258 transport Effects 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 230000010287 polarization Effects 0.000 description 4
- 238000001237 Raman spectrum Methods 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000427 antigen Substances 0.000 description 2
- 102000036639 antigens Human genes 0.000 description 2
- 108091007433 antigens Proteins 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 241000135309 Processus Species 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical group [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000004081 narcotic agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
Landscapes
- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010176427A JP5589656B2 (ja) | 2009-12-11 | 2010-08-05 | センサーチップ、センサーカートリッジ及び分析装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009281480 | 2009-12-11 | ||
| JP2009281480 | 2009-12-11 | ||
| JP2010176427A JP5589656B2 (ja) | 2009-12-11 | 2010-08-05 | センサーチップ、センサーカートリッジ及び分析装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011141264A JP2011141264A (ja) | 2011-07-21 |
| JP5589656B2 true JP5589656B2 (ja) | 2014-09-17 |
Family
ID=44457202
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010176427A Active JP5589656B2 (ja) | 2009-12-11 | 2010-08-05 | センサーチップ、センサーカートリッジ及び分析装置 |
| JP2010192838A Active JP5565215B2 (ja) | 2009-11-19 | 2010-08-30 | センサーチップ、センサーカートリッジ及び分析装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010192838A Active JP5565215B2 (ja) | 2009-11-19 | 2010-08-30 | センサーチップ、センサーカートリッジ及び分析装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP5589656B2 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9267894B2 (en) | 2012-08-10 | 2016-02-23 | Hamamatsu Photonics K.K. | Method for making surface enhanced Raman scattering device |
| JP5621394B2 (ja) * | 2009-11-19 | 2014-11-12 | セイコーエプソン株式会社 | センサーチップ、センサーカートリッジ及び分析装置 |
| JP5810667B2 (ja) | 2011-06-23 | 2015-11-11 | セイコーエプソン株式会社 | 光デバイス及び検出装置 |
| JP5857507B2 (ja) * | 2011-08-02 | 2016-02-10 | セイコーエプソン株式会社 | 検出装置 |
| JP5796395B2 (ja) * | 2011-08-03 | 2015-10-21 | セイコーエプソン株式会社 | 光学デバイス、検出装置及び検出方法 |
| JP5821511B2 (ja) | 2011-10-17 | 2015-11-24 | セイコーエプソン株式会社 | 光デバイス及び検出装置 |
| JP5880064B2 (ja) | 2012-01-18 | 2016-03-08 | セイコーエプソン株式会社 | 試料分析素子および検出装置 |
| JP5923992B2 (ja) | 2012-01-18 | 2016-05-25 | セイコーエプソン株式会社 | 試料分析素子および検出装置 |
| WO2013129665A1 (ja) * | 2012-03-01 | 2013-09-06 | 日本精工株式会社 | 標的物質捕捉装置およびそれを備えた標的物質検出装置 |
| JP2013221883A (ja) | 2012-04-18 | 2013-10-28 | Seiko Epson Corp | 試料分析素子および検出装置 |
| JP5939016B2 (ja) * | 2012-04-27 | 2016-06-22 | セイコーエプソン株式会社 | 光学デバイス及び検出装置 |
| JP5935492B2 (ja) * | 2012-05-01 | 2016-06-15 | セイコーエプソン株式会社 | 光学デバイス及び検出装置 |
| JP2013234941A (ja) | 2012-05-10 | 2013-11-21 | Seiko Epson Corp | センサーチップ並びにセンサーカートリッジおよび検出装置 |
| JP2013234977A (ja) | 2012-05-11 | 2013-11-21 | Seiko Epson Corp | 試料分析素子並びに検査装置およびセンサーカートリッジ |
| JP5921381B2 (ja) * | 2012-08-10 | 2016-05-24 | 浜松ホトニクス株式会社 | 表面増強ラマン散乱ユニット |
| JP5945192B2 (ja) | 2012-08-10 | 2016-07-05 | 浜松ホトニクス株式会社 | 表面増強ラマン散乱ユニット |
| JP5921380B2 (ja) | 2012-08-10 | 2016-05-24 | 浜松ホトニクス株式会社 | 表面増強ラマン散乱ユニット |
| JP5908370B2 (ja) | 2012-08-10 | 2016-04-26 | 浜松ホトニクス株式会社 | 表面増強ラマン散乱ユニット |
| CN108827928B (zh) | 2012-08-10 | 2021-12-24 | 浜松光子学株式会社 | 表面增强拉曼散射单元及其使用方法 |
| EP2884262B1 (en) | 2012-08-10 | 2022-04-27 | Hamamatsu Photonics K.K. | Surface-enhanced raman scattering unit |
| CN104508466B (zh) | 2012-08-10 | 2018-07-17 | 浜松光子学株式会社 | 表面增强拉曼散射元件 |
| JP6058313B2 (ja) | 2012-08-10 | 2017-01-11 | 浜松ホトニクス株式会社 | 表面増強ラマン散乱ユニット |
| JP6055234B2 (ja) | 2012-08-10 | 2016-12-27 | 浜松ホトニクス株式会社 | 表面増強ラマン散乱ユニット |
| EP2884264B1 (en) | 2012-08-10 | 2019-11-20 | Hamamatsu Photonics K.K. | Surface-enhanced raman scattering element, and method for producing same |
| US10132755B2 (en) | 2012-08-10 | 2018-11-20 | Hamamatsu Photonics K.K. | Surface-enhanced Raman scattering element, and method for manufacturing surface-enhanced Raman scattering element |
| JP6023509B2 (ja) | 2012-08-10 | 2016-11-09 | 浜松ホトニクス株式会社 | 表面増強ラマン散乱ユニット |
| JP6365817B2 (ja) * | 2014-02-17 | 2018-08-01 | セイコーエプソン株式会社 | 分析装置、及び電子機器 |
| US10983052B2 (en) | 2017-08-10 | 2021-04-20 | Imra Japan Kabushikikaisha | Electricity measuring type surface plasmon resonance sensor and electricity measuring type surface plasmon resonance sensor chip used in the same |
| EP3948236A1 (en) | 2019-03-25 | 2022-02-09 | AIT Austrian Institute of Technology GmbH | Plasmon-enhanced fluorescence spectroscopy imaging by multi-resonant nanostructures |
| EP4047668A4 (en) | 2019-10-18 | 2023-12-06 | Aisin Corporation | ELECTRICAL MEASUREMENT TYPE SURFACE PLASMONIC RESONANCE SENSOR, ELECTRICAL MEASUREMENT TYPE SURFACE PLASMONIC RESONANCE SENSOR CHIP, AND METHOD FOR DETECTING SURFACE PLASMONIC RESONANCE CHANGE |
| FR3102573B1 (fr) * | 2019-10-28 | 2024-12-13 | Centre Nat Rech Scient | Elément optique diffractif comprenant une métasurface pour la microscopie TIRF |
| KR20250018260A (ko) * | 2023-07-27 | 2025-02-05 | 한국과학기술원 | 표면증강 라만 분광 기판, 표면증강 라만 분광과 순환 전압전류법을 이용한 바이오마커의 검출 방법 및 검출 시스템 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4035016B2 (ja) * | 2001-08-07 | 2008-01-16 | 三菱化学株式会社 | 表面プラズモン共鳴センサチップ、並びにそれを用いた試料の分析方法及び分析装置 |
| WO2005017570A2 (en) * | 2003-08-06 | 2005-02-24 | University Of Pittsburgh | Surface plasmon-enhanced nano-optic devices and methods of making same |
| JP4345625B2 (ja) * | 2004-09-22 | 2009-10-14 | 株式会社島津製作所 | 回折格子 |
| JP2006349463A (ja) * | 2005-06-15 | 2006-12-28 | Canon Inc | 表面増強ラマン分光分析用治具及びその製造方法 |
| JP2009015305A (ja) * | 2007-06-07 | 2009-01-22 | Seiko Epson Corp | 光学素子及び投写型表示装置 |
| US7639355B2 (en) * | 2007-06-26 | 2009-12-29 | Hewlett-Packard Development Company, L.P. | Electric-field-enhancement structure and detection apparatus using same |
| JP5040847B2 (ja) * | 2007-08-10 | 2012-10-03 | セイコーエプソン株式会社 | 光学素子、液晶装置、表示装置 |
| JP2009250951A (ja) * | 2008-04-11 | 2009-10-29 | Fujifilm Corp | 電場増強光デバイス |
| JP2012508881A (ja) * | 2008-11-17 | 2012-04-12 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー． | 表面増強ラマン散乱（ｓｅｒｓ）用基板 |
| JP5621394B2 (ja) * | 2009-11-19 | 2014-11-12 | セイコーエプソン株式会社 | センサーチップ、センサーカートリッジ及び分析装置 |
-
2010
- 2010-08-05 JP JP2010176427A patent/JP5589656B2/ja active Active
- 2010-08-30 JP JP2010192838A patent/JP5565215B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011141264A (ja) | 2011-07-21 |
| JP2011141265A (ja) | 2011-07-21 |
| JP5565215B2 (ja) | 2014-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5589656B2 (ja) | センサーチップ、センサーカートリッジ及び分析装置 | |
| JP5655435B2 (ja) | センサーチップ、センサーカートリッジ及び分析装置 | |
| EP2325634B1 (en) | Sensor chip, sensor cartridge, and analysis apparatus | |
| US9057697B2 (en) | Optical device with propagating and localized surface plasmons and detection apparatus | |
| WO2009002524A2 (en) | Electric-field-enhancement structure and detection apparatus using same | |
| CN104849217B (zh) | 分析装置及电子设备 | |
| US20140242573A1 (en) | Optical element, analysis device, analysis method and electronic apparatus | |
| CN103018210B (zh) | 分析装置 | |
| US20100221842A1 (en) | Sensor device for the detection of target components | |
| JP2015152492A (ja) | 分析装置、及び電子機器 | |
| JP2015114219A (ja) | 電場増強素子、分析装置、及び電子機器 | |
| Canpean et al. | Multifunctional plasmonic sensors on low-cost subwavelength metallic nanoholes arrays | |
| CN104807800A (zh) | 电场增强元件、拉曼光谱法、拉曼光谱装置及电子设备 | |
| EP3051277A2 (en) | Electric-field enhancement element, analysis device, and eletronic apparatus | |
| KR101669289B1 (ko) | 센서 칩, 센서 카트리지 및 분석 장치 | |
| JP2016197069A (ja) | 電場増強素子、分析装置、及び電子機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120203 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130725 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140217 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140318 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140424 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140701 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140714 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5589656 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |