JP5582001B2 - Mechanical quantity sensor, combined mechanical quantity sensor, electronic circuit board and electronic device - Google Patents

Description

  The present invention relates to a mechanical quantity sensor that detects a mechanical quantity using an element that is displaced according to an external force, and a method for manufacturing the mechanical quantity sensor.

  In recent years, various electronic devices have been reduced in size, weight, functionality, and functionality, and electronic components to be mounted have been required to have higher density. In response to such demands, an increasing number of electronic components are manufactured as semiconductor devices. For this reason, in addition to the semiconductor device manufactured as a circuit element, a sensor for detecting a mechanical quantity is also manufactured using the semiconductor device, and a reduction in size and weight is achieved. For example, in an acceleration sensor having a small and simple structure formed by using MEMS (Micro Electro Mechanical Systems) technology, a movable part that is displaced according to an external force is formed on a semiconductor substrate, and the displacement of the movable part is measured by piezoelectricity. A sensor of a type that uses a resistance element, a capacitance element or the like for detection has been put into practical use.

  Among such semiconductor sensors, as a capacitance type semiconductor sensor, a plurality of comb-like movable electrodes are formed on a semiconductor substrate, and static electricity detected in accordance with the size of the gap between the movable electrode and the fixed electrode. Some attempt to detect the displacement of a physical quantity based on the electric capacity (see, for example, Patent Document 1).

JP 2007-298408 A

  However, in the electrostatic capacity type semiconductor sensor proposed by the above-mentioned Patent Document 1, since a displacement of a minute physical quantity is detected by a change in electrostatic capacity, a detection signal (change in electrostatic capacity) is sent outside the sensor. A CV conversion circuit or the like for processing is necessary, and there is a problem that the cost of the mechanical quantity detection system including the external circuit is increased. Further, the direction of the detected external force is limited.

  In view of the above-described conventional problems, the present invention provides a mechanical quantity sensor that can detect the magnitude and direction of external force and acceleration, and can be manufactured at low cost, and a method for manufacturing the mechanical quantity sensor. Objective.

  A mechanical quantity sensor according to an embodiment of the present invention includes a substrate, a plurality of fixing portions disposed on the substrate, and one end portion supported by each of the plurality of fixing portions and spaced apart from the substrate. A plurality of movable electrodes arranged with a predetermined gap, a fixed electrode arranged adjacent to the other end of each of the plurality of movable electrodes, and a mechanical quantity detection direction; A plurality of first terminals connected to each other and a second terminal electrically connected to the fixed electrode. According to the mechanical quantity sensor according to the embodiment of the present invention, the magnitude and direction of the applied external force and the acceleration can be detected. Furthermore, since the structure can be simplified as compared with the conventional mechanical quantity sensor, a mechanical quantity sensor that is easy to manufacture can be realized.

  In addition, the mechanical quantity sensor according to the embodiment of the present invention includes a substrate, a single fixing portion disposed on the substrate, and one end portion supported by the fixing portion and spaced apart from the substrate. A plurality of movable electrodes arranged with a predetermined gap, a fixed electrode arranged in the detection direction of the mechanical quantity adjacent to each of the other ends of the plurality of movable electrodes, and electrically connected to the fixed portion And a second terminal electrically connected to the fixed electrode. According to the mechanical quantity sensor according to the embodiment of the present invention, the magnitude and direction of the applied external force and the acceleration can be detected. Furthermore, since the structure can be simplified as compared with the conventional mechanical quantity sensor, a mechanical quantity sensor that is easy to manufacture can be realized.

  In the mechanical quantity sensor according to the embodiment of the invention, the plurality of movable electrodes may include movable electrodes that bend with different deflection amounts when an external force is applied. According to the mechanical quantity sensor according to the embodiment of the present invention, it is possible to detect various magnitudes, directions, and accelerations of external forces according to specifications.

  In the mechanical quantity sensor according to the embodiment of the invention, the plurality of movable electrodes may include movable electrodes having different lengths. According to the mechanical quantity sensor according to the embodiment of the present invention, by varying the lengths of the movable electrodes, various magnitudes and directions and accelerations of external forces can be detected according to specifications.

  In the mechanical quantity sensor according to the embodiment of the present invention, a weight portion may be disposed at the other end portion of the plurality of movable electrodes. According to the mechanical quantity sensor according to the embodiment of the present invention, the weight of the weight portion arranged at the end of the movable electrode makes it easy to contact the fixed electrode when an external force is applied. Even when the distance is small, the presence or absence of contact between the movable electrode and the fixed electrode can be detected, and the detection sensitivity of the magnitude of the external force and the application direction can be improved.

  In the mechanical quantity sensor according to the embodiment of the present invention, the plurality of movable electrodes may include movable electrodes having different widths or thicknesses. According to the mechanical quantity sensor according to the embodiment of the present invention, it is possible to detect various magnitudes, directions, and accelerations of external forces according to specifications.

  In the mechanical quantity sensor according to the embodiment of the present invention, the distances between the other end portions of the plurality of movable electrodes and the plurality of fixed electrodes may include different movable electrodes and fixed electrodes. According to the mechanical quantity sensor according to the embodiment of the present invention, it is possible to detect various magnitudes, directions, and accelerations of external forces according to specifications.

  The mechanical quantity sensor according to an embodiment of the present invention includes the length, the width, the thickness, the size of the weight, and the other end of the plurality of movable electrodes and the fixed electrode. May be determined according to the magnitude of the external force to be detected. According to the mechanical quantity sensor according to the embodiment of the present invention, these dimensions are changed according to the specifications, and a plurality of movable electrodes and fixed electrodes are arranged to detect the magnitude of the external force and the detection sensitivity of the application direction. Can be improved.

  In the mechanical quantity sensor according to the embodiment of the present invention, the other end portions of the plurality of movable electrodes are displaced by the applied external force and come into contact with the opposing fixed electrodes, and any of the plurality of movable electrodes is The magnitude and direction of application of the external force may be detected by detecting whether the fixed electrode is touched. According to the mechanical quantity sensor according to the embodiment of the present invention, a change in external force can be detected based on the presence or absence of conduction between the movable electrode and the fixed electrode. Cost can also be reduced.

  The mechanical quantity sensor according to the embodiment of the present invention includes a substrate, a first fixing portion and a second fixing portion arranged on the substrate, the first fixing portion and the second fixing portion. A first movable electrode and a second movable electrode, each of which is supported at one end and spaced apart from the substrate by a predetermined gap in a different direction; the first movable electrode and the first movable electrode; A first fixed electrode and a second fixed electrode, which are adjacent to the other end of the second movable electrode and arranged in the detection direction of the mechanical quantity, and the first fixed portion and the second fixed portion. A first terminal and a second terminal which are electrically connected to each other; a third terminal and a fourth terminal which are respectively electrically connected to the first fixed electrode and the second fixed electrode; It is characterized by providing. According to the mechanical quantity sensor according to the embodiment of the present invention, the magnitude and direction of the applied external force can be detected. Furthermore, since the structure can be simplified as compared with the conventional mechanical quantity sensor, a mechanical quantity sensor that is easy to manufacture can be realized.

  In the mechanical quantity sensor according to the embodiment of the present invention, the other ends of the first movable electrode and the second movable electrode are displaced by an applied external force and are respectively opposed to each other by the first fixed electrode and The distance between the first fixed electrode and the second fixed electrode is changed, and is generated between the first fixed electrode and the second fixed electrode facing the first movable electrode and the second movable electrode, respectively. The magnitude of the external force and the direction of application may be detected by detecting the change in the capacitance value. According to the mechanical quantity sensor according to the embodiment of the present invention, since the external circuit can be simplified as compared with the conventional mechanical quantity sensor, the manufacturing cost can also be reduced.

  A mechanical quantity sensor according to an embodiment of the present invention includes a substrate, a fixed portion disposed on the substrate, and one end portion supported by the fixed portion and spaced apart from the substrate, each having a predetermined gap. A plurality of movable electrodes disposed at intervals, a plurality of fixed electrodes disposed to face a lower surface of the other end of the plurality of movable electrodes, and a fixed portion electrode electrically connected to the fixed portion, A wiring terminal electrically connected to each of the plurality of fixed electrodes and the fixed portion electrode, and a part of the plurality of movable electrodes has a lower surface of the other end in contact with the fixed electrode. The other end portions of the plurality of movable electrodes are displaced by an applied external force and contact with the fixed electrode or away from the fixed electrode, and any of the plurality of movable electrodes is the fixed electrode. By detecting whether it has touched May detect To application direction is. According to the mechanical quantity sensor according to the embodiment of the present invention, a change in external force can be detected based on the presence or absence of conduction between the movable electrode and the fixed electrode. Cost can also be reduced.

  In the mechanical quantity sensor according to the embodiment of the present invention, the plurality of movable electrodes may have a shape in line contact or point contact with the fixed electrode. According to the mechanical quantity sensor according to the embodiment of the present invention, since the contact area of the movable electrode when contacting the fixed electrode can be reduced, a part of the movable electrode is applied by an electrostatic attractive force or the like after the external force is applied. Can be prevented from sticking in contact with the fixed electrode.

  In the composite mechanical quantity sensor according to the embodiment of the present invention, a plurality of the mechanical quantity sensors may be arranged on the substrate according to the direction in which the external force is detected. According to the composite mechanical quantity sensor according to the embodiment of the present invention, for example, the direction and magnitude of external force such as triaxial direction (X axis, Y axis, Z axis direction) and acceleration can be detected. Since it can be manufactured by the same simple manufacturing method as the mechanical quantity sensor, the manufacturing cost can be suppressed.

  An electronic circuit board according to an embodiment of the present invention includes the mechanical quantity sensor, a circuit board on which the mechanical quantity sensor is mounted, and an IC that is disposed on the circuit board and is electrically connected to the mechanical quantity sensor. And a chip. According to the electronic circuit board according to the embodiment of the present invention, it is easy to mount a mechanical quantity sensor capable of detecting the magnitude and direction of external force and acceleration with a simple structure in various electronic devices. It becomes possible.

  An electronic circuit board according to an embodiment of the present invention includes the composite dynamic quantity sensor, a circuit board on which the composite dynamic quantity sensor is mounted, and the electronic circuit board disposed on the circuit board. Connected IC chips. According to the electronic circuit board according to the embodiment of the present invention, it is possible to mount a composite mechanical quantity sensor capable of detecting the magnitude and direction of external force and acceleration with a simple structure in various electronic devices. Easy to do.

  An electronic apparatus according to an embodiment of the present invention includes at least the electronic circuit board, a housing that houses the electronic circuit board, and an input unit and an output unit that are electrically connected to the electronic circuit board. It is characterized by providing. According to the electronic device according to the embodiment of the present invention, the electronic device using the functions of the mechanical quantity sensor and the combined mechanical quantity sensor capable of detecting the magnitude and direction of the external force and the acceleration with a simple structure. Can be provided.

  In the manufacturing method of the mechanical quantity sensor according to the embodiment of the present invention, the upper layer and the intermediate layer of the first substrate composed of three layers are etched, and one end portion is supported by each of the plurality of fixing portions and the plurality of fixing portions. A plurality of movable electrodes that are spaced apart from the first substrate and spaced apart from each other by a predetermined gap, and are disposed adjacent to the other end portions of the plurality of movable electrodes in a mechanical quantity detection direction. A plurality of first terminals and a plurality of second terminals are formed on a second substrate in accordance with positions where the plurality of fixed parts and the fixed electrodes are formed, and the plurality of fixed parts and the plurality of fixed parts are formed on the second substrate. The surface of the first substrate on which the movable electrode and the fixed electrode are formed may be bonded to the surface of the second substrate on which the plurality of first terminals and second terminals are formed. According to the method of manufacturing a mechanical quantity sensor according to the embodiment of the present invention, since the structure of the mechanical quantity sensor becomes simple, the manufacturing process can be reduced and the manufacturing cost can be reduced.

  According to the present invention, it is possible to detect the magnitude, direction, and acceleration of the external force by detecting whether or not the movable electrode and the fixed electrode are in contact with each other when an external force is applied. It is possible to provide a mechanical quantity sensor that can be used and a method of manufacturing the mechanical quantity sensor.

1 is a plan view showing a schematic structure of a mechanical quantity sensor according to a first embodiment of the present invention. 1 is a plan view showing a schematic structure of a mechanical quantity sensor according to a first embodiment of the present invention. It is a table | surface for demonstrating operation | movement of the mechanical quantity sensor which concerns on the 1st Embodiment of this invention, and is a table | surface showing the conduction | electrical_connection relationship between the direction and magnitude | size of the applied external force, and a some movable electrode and fixed electrode. . It is sectional drawing which showed schematic structure of the mechanical quantity sensor which concerns on the 1st Embodiment of this invention, (a) is when the semiconductor substrate shown in FIG. 1 and the glass substrate shown in FIG. 2 are joined. FIG. 2 is a cross-sectional view taken along the line AA ′ shown in FIG. 1, and FIG. 1B shows the semiconductor substrate shown in FIG. 1 and the glass substrate shown in FIG. 2 bonded together. It is sectional drawing seen from the BB 'line, (c) is from CC' line shown in FIG. 1 when the semiconductor substrate shown in FIG. 1 and the glass substrate shown in FIG. 2 are joined. FIG. It is a figure for demonstrating the manufacturing process which showed the schematic structure of the cross section by the side of the semiconductor substrate of the mechanical quantity sensor which concerns on the 1st Embodiment of this invention, (a) is sectional drawing which shows the semiconductor substrate before a process, (B) is sectional drawing which shows the process of forming a recessed part in a semiconductor substrate, (c) is sectional drawing which shows the process in the middle of forming a fixed part, a movable electrode, and a fixed electrode in a semiconductor substrate, (d) is It is sectional drawing which shows the process of having formed the fixed part, the movable electrode, and the fixed electrode in the semiconductor substrate. It is a figure for demonstrating the manufacturing process of the semiconductor substrate of the mechanical quantity sensor which concerns on the 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing process which showed the schematic structure of the cross section by the side of the glass substrate of the mechanical quantity sensor which concerns on the 1st Embodiment of this invention, (a) is sectional drawing which shows the glass substrate before a process, (B) is sectional drawing which shows the process of forming a 1st terminal and a 2nd terminal in a glass substrate, (c) is sectional drawing which shows the process of forming a recessed part in a glass substrate, (d) is wiring and penetration to a glass substrate. It is sectional drawing which shows the process in the middle of forming an electrode, (e) is sectional drawing which shows the process which formed the wiring and the penetration electrode in the glass substrate. It is the top view which showed the modification of the semiconductor substrate of the mechanical quantity sensor which concerns on the 1st Embodiment of this invention. It is the top view which showed schematic structure of the mechanical quantity sensor which concerns on the 2nd Embodiment of this invention. It is a table | surface for demonstrating operation | movement of the mechanical quantity sensor which concerns on the 2nd Embodiment of invention, and is a table | surface showing the conduction | electrical_connection relationship between the direction and magnitude | size of the external force applied, and a some movable electrode and a fixed electrode. It is the top view which showed schematic structure of the mechanical quantity sensor which concerns on the 3rd Embodiment of this invention. It is the top view which showed schematic structure of the mechanical quantity sensor which concerns on the 3rd Embodiment of this invention. It is sectional drawing which showed the mechanical quantity sensor which concerns on the 3rd Embodiment of this invention. It is a table | surface for demonstrating operation | movement of the mechanical quantity sensor which concerns on the 3rd Embodiment of this invention, and is a table | surface showing the conduction | electrical_connection relationship between the direction and magnitude | size of the applied external force, and a some movable electrode and a fixed electrode. . It is a figure for demonstrating the manufacturing process which showed the schematic structure of the cross section by the side of the glass substrate of the mechanical quantity sensor which concerns on the 3rd Embodiment of this invention, (a) is sectional drawing which shows the glass substrate before a process, (B) is sectional drawing which shows the process in the middle of forming a fixed part electrode in a glass substrate, (c) is sectional drawing which shows the process in the middle of forming a fixed part electrode and a fixed electrode in a glass substrate, (d) is glass Sectional drawing which shows the process which formed the fixed part electrode and the fixed electrode in the board | substrate, (e) is sectional drawing which shows the process in the middle of forming a penetration electrode in a glass substrate, (f) is a penetration electrode and a glass substrate. It is sectional drawing which shows the process in the middle of forming the terminal for wiring. It is the top view which showed schematic structure of the composite type | mold dynamic quantity sensor which concerns on the 4th Embodiment of this invention. It is the top view which showed schematic structure of the composite type | mold dynamic quantity sensor which concerns on the 4th Embodiment of this invention. It is the top view which showed schematic structure of the composite type | mold dynamic quantity sensor which concerns on the 5th Embodiment of this invention. It is a figure for demonstrating the cross-section of the composite type | mold dynamic quantity sensor which concerns on the 5th Embodiment of this invention, (a) is an X-axis dynamic quantity sensor which detects the external force of the X-axis direction shown in FIG. FIG. 18B is a plan view showing a partial structure of the Z-axis mechanical quantity sensor for detecting an external force in the Z-axis direction shown in FIG. 4A is a cross-sectional view of the X-axis mechanical quantity sensor shown in FIG. 4A as viewed from line (i), and FIG. 4D is a cross-sectional view of the Z-axis dynamic quantity sensor shown in FIG. (E) is a cross-sectional view of the X-axis mechanical quantity sensor shown in (a) as viewed from the line (ii), and (f) is a diagram of the Z-axis dynamic quantity sensor shown in (b). (Ii) It is sectional drawing seen from the line, (g) is sectional drawing which looked at the X-axis mechanical quantity sensor shown to (a) from (iii) line, (h) is (b). It is a cross-sectional view of the Z-axis mechanical sensor from (iii) rays. It is the top view which showed schematic structure of the mechanical quantity sensor which concerns on the 6th Embodiment of this invention. It is the top view which showed schematic structure of the mechanical quantity sensor which concerns on the 7th Embodiment of this invention. It is the top view which showed schematic structure of the mechanical quantity sensor which concerns on the 7th Embodiment of this invention. It is a schematic diagram for demonstrating the structure of the movable electrode which concerns on Example 1 of this invention. It is a schematic diagram for demonstrating the structure of the movable electrode which concerns on Example 1 of this invention, (a) shows the schematic structure of the movable electrode which has the weight part similar to the weight part illustrated in FIG. b) shows a schematic structure of a movable electrode having a weight portion which is a modification of the weight portion shown in FIG. 24 is a table showing the relationship between the length of the movable electrode shown in FIG. 23A, the length of the weight portion in the Y-axis direction, and the amount of deflection when the width of the weight portion in the X-axis direction is changed. . It is a schematic diagram for demonstrating the structure of the movable electrode which concerns on Example 2 of this invention, (a) is a schematic structure of the movable electrode 902 which has a weight part 902a which is connected to a fixed part and opposes a fixed electrode. (B) shows the schematic structure which expanded B part shown to (a), (c) shows the schematic structure which expanded C part shown to (a). It is a schematic diagram for demonstrating the structure of the movable electrode 902 which concerns on Example 2 of this invention. The length of the movable electrode illustrated in FIG. 26 in the X-axis direction, the gap between the contact portion of the movable electrode and the fixed electrode, the length of the horizontal portion of the movable electrode in the Y-axis direction, and the number of horizontal portions were changed. It is a table | surface which shows the relationship with the deflection amount in a case. It is the top view which showed schematic structure of the semiconductor substrate of the mechanical quantity sensor which concerns on Example 2 of this invention. It is the top view which showed schematic structure of the 1st glass substrate of the mechanical quantity sensor which concerns on Example 2 of this invention. It is the top view which showed schematic structure of the 2nd glass substrate of the mechanical quantity sensor which concerns on Example 2 of this invention. It is a figure for demonstrating the manufacturing process of the mechanical quantity sensor which concerns on Example 2 of this invention, (a) is sectional drawing which shows the process of anodically bonding the semiconductor substrate and the 1st glass substrate before a process. (B) is sectional drawing which shows the process of grind | polishing a semiconductor substrate, (c) is sectional drawing which shows the process of forming a recessed part in a semiconductor substrate, (d) is a fixing | fixed part to a semiconductor substrate, It is sectional drawing which shows the process of forming a movable electrode and a fixed electrode, (e) is sectional drawing which shows a 2nd glass substrate, (f) shows the process of forming a recessed part in a 2nd glass substrate. It is sectional drawing. It is a figure for demonstrating the manufacturing process of the mechanical quantity sensor which concerns on Example 2 of this invention, (g) is the 1st glass substrate and semiconductor substrate which were shown in (d) of FIG. 31, and ( It is sectional drawing which shows the process of anodic bonding with the 2nd glass substrate shown to f), (h) is sectional drawing which reversed the structure shown to (g), (i) is (h) (J) is sectional drawing which shows the process in the middle of forming the terminal for wiring in the 1st glass substrate, (k) These are sectional drawings which show the process of forming the terminal for wiring in the 1st glass substrate. It is a figure which shows the circuit structure of the processing circuit which processes the signal detected by the dynamic quantity sensor which concerns on one Embodiment of this invention. It is the top view which showed schematic structure of the mechanical quantity sensor which concerns on the 8th Embodiment of this invention. It is the top view which showed schematic structure of the mechanical quantity sensor which concerns on the 8th Embodiment of this invention. It is a figure for demonstrating operation | movement of the dynamic quantity sensor which concerns on the 8th Embodiment of this invention. It is a figure for demonstrating operation | movement of the dynamic quantity sensor which concerns on the 8th Embodiment of this invention. It is a perspective view which shows schematic structure of the electronic circuit board which concerns on the 9th Embodiment of this invention. It is a perspective view which shows schematic structure of the portable information terminal which concerns on the 9th Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, this invention is not limited to the following embodiment, In the range which does not deviate from the summary, it can implement in various aspects.

(First embodiment)
<Structure of mechanical quantity sensor>
First, the basic structure of the mechanical quantity sensor according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a plan view showing a schematic structure of a mechanical quantity sensor 100 according to the first embodiment of the present invention. The mechanical quantity sensor 100 includes a semiconductor substrate 104, a fixed portion 101 (101R1 to 101R3, 101L1 to 101L3) formed on the semiconductor substrate 104, a movable electrode 102 (R1 to R3, L1 to L3), and a fixed electrode 103. And including. The fixing unit 101 is fixed on the semiconductor substrate 104. The movable electrodes 102 (R 1 to R 3, L 1 to L 3) are arranged so as to be separated from the semiconductor substrate 104 with their one ends connected to the fixed portion 101 (101 R 1 to 101 R 3, 101 L 1 to 101 L 3). In the present embodiment, the other end of the movable electrode 102 (R1 to R3, L1 to L3) may function as a weight. For example, as illustrated, an elliptical weight portion 102a (102aR1 to 102aR3, 102aL1 to 102aL3) may be formed on the other end of the movable electrode 102 (R1 to R3, L1 to L3).

  The movable electrodes 102 (R1 to R3, L1 to L3) have flexibility or elasticity, and bend in the Y-axis direction shown in the drawing in accordance with an external force applied to the mechanical quantity sensor 100. In the present embodiment, each of the movable electrodes 102 (R1 to R3, L1 to L3) has the same width and the same weight portions 102a (102aR1 to 102aR3, 102aL1 to 102aL3). , Each has a different length. The plurality of movable electrodes R1 to R3 and L1 to L3 are arranged with a gap, and each weight portion 102a (102aR1 to 102aR3, 102aL1 to 102aL3) contacts the fixed electrode 103 according to the magnitude of the applied external force. As described above, the plurality of contact portions T1 to T5 of the fixed electrode 103 are disposed between the plurality of movable electrodes R1 to R3 and L1 to L3. The mechanical quantity sensor 100 shown in FIG. 1 shows a structure for detecting an external force in the Y-axis direction, but is not limited to this. The fixed electrode 103 is located around the movable electrode 102 and is a mechanical quantity. It may be arranged according to the detection direction. Further, the shapes of the fixed portion 101, the movable electrode 102, and the fixed electrode 103 are not limited to the illustrated shapes, and may be changed as appropriate according to the specifications of the mechanical quantity sensor 100. In the present embodiment, as shown in the drawing, the plurality of movable electrodes 102 (R1 to R3, L1 to L3) have the same width, the other end of the same shape, and the respective lengths. However, the present invention is not limited to this, as long as the amount of deflection differs according to the external force applied to the mechanical quantity sensor 100. The plurality of movable electrodes 102 have a deflection amount corresponding to an external force applied to the mechanical quantity sensor 100 by appropriately changing the length of the movable electrode, the width of the movable electrode, and / or the size / shape of the other end. As long as they are different from each other. Further, by appropriately adjusting the distance between each movable electrode 102 (R1 to R3, L1 to L3) and the fixed electrode 103, each other end is fixed electrode according to the external force applied to the mechanical quantity sensor 100. 103 may be contacted.

  The movable electrodes 102 (R1 to R3, L1 to L3) are conductors having a predetermined Young's modulus, bend according to the magnitude of the external force applied to the mechanical quantity sensor 100, and are arranged in the direction in which the external force is applied. A part of the fixed electrode 103 (in this embodiment, the weight part 102a (102aR1 to 102aR3, 102aL1 to 102aL3) formed at the other end of the movable electrode 102) comes into contact. In addition, it is preferable that the contact surface where each of the movable electrode 102 and the fixed electrode 103 contacts is doped with an impurity at a high concentration or a metal film is formed to improve contact performance. The lengths of the movable electrodes 102 (R1 to R3, L1 to L3) are set such that the amount of deflection differs according to the applied external force.

  As shown in FIG. 1, when the lengths of the plurality of movable electrodes 102 (R1 to R3, L1 to L3) are different from each other, the plurality of movable electrodes 102 (R1) are selected according to the magnitude of the applied external force. ˜R3, L1˜L3) are each bent with a different amount of deflection, and a part thereof comes into contact with the contact portions T1 to T5 of the fixed electrode 103 arranged in the direction in which the external force is applied. At this time, by detecting which of the plurality of movable electrodes 102 (R1 to R3, L1 to L3) is in contact with the fixed portion 101 and the fixed electrode 103, the movable electrode 102 is contacted. The magnitude of the external force can be detected.

  FIG. 2 is a plan view showing a schematic structure of the mechanical quantity sensor 100 according to the first embodiment of the present invention, and shows a glass substrate 105 bonded to the semiconductor substrate 104 shown in FIG. As shown in FIG. 2, first terminals 101 a (101 a R <b> 1 to 101 a R <b> 3, 101 a </ b> L <b> 1 to 101 a </ i> L <b> 2) are formed on the glass substrate 105 at positions corresponding to the fixed portions 101, Two terminals 103a are formed. The mechanical quantity sensor 100 electrically detects whether or not the movable electrode 102 (R1 to R3, L1 to L3) is in contact with the fixed electrode 103. Therefore, the fixed portion 101 (101R1 to 101R3, 101L1 to 101L3) One terminal 101a (101aR1 to 101aR3, 101aL1 to 101aL2) is connected, and the fixed second electrode 103a is connected to the fixed electrode 103. The first terminal 101a and the second terminal 103a are connected to a circuit (not shown) that processes a mechanical quantity detection signal in an electronic device in which the mechanical quantity sensor 100 is mounted.

  As shown in FIG. 1, among the plurality of movable electrodes R1 to R3 and L1 to L3, the left side of the movable electrodes L1 to L3 is negative to positive in the Y-axis direction (in the Y-axis direction from right to left in the figure). ), The contact portions T3 to T5 are spaced apart from each other by a distance k1, and the right side of the movable electrodes R1 to R3 has a positive to negative (Y In order to detect an external force applied in the axial direction from the left to the right in the drawing, the contact portions T1 to T3 may be arranged apart from each other by a distance k1. At this time, the distance k2 between the plurality of movable electrodes R1 to R3 and L1 to L3 and the contact portions T1 to T5 arranged in the opposite directions of the respective detection directions is determined by the plurality of movable electrodes R1 to R3 and L1 to L3. Even if it bends in the reverse direction of the detection direction, the distance may be larger than the distance k1 so that it does not come into contact.

  In one embodiment of the present invention, the movable electrode 102 (R1 to R3, L1 to L3) may be formed in a thin plate shape having a width of 3 μm and a height in the Z direction of 30 μm. The plurality of movable electrodes R1 to R3 and L1 to L3 may have different lengths, the movable electrode L1 and the movable electrode R1 have the same length, and the movable electrode L2 and the movable electrode R2 are The movable electrode L3 and the movable electrode R3 may have the same length. The distances k1 between the movable electrodes 102 (R1 to R3, L1 to L3) and the contact portions T1 to T5 of the fixed electrodes 103 arranged in the respective detection directions may be 2 μm, respectively. Further, the distances k2 between the movable electrodes 102 (R1 to R3, L1 to L3) and the contact portions T1 to T5 of the fixed electrode 103 arranged in the reverse direction of each detection direction may be 6 μm, respectively. The fixing portion 101 may have a rectangular parallelepiped shape with a height in the Z direction of 30 μm, but is not limited to this shape. The fixed electrode 103 may have a comb shape having a width of 20 μm and a height in the Z direction of 30 μm, but is not limited to this shape. In the embodiment of the present invention, the dimensions of each part are appropriately changed according to the specifications.

  As shown in FIG. 1, the other end of the movable electrode 102 (R1 to R3, L1 to L3) facing the contact portions T1 to T5 of the fixed electrode 103 is provided with a weight portion 102a (102aR1 to 102aR3, 102aL1 to 102aL3). ) May be formed. By having the weight portion 102a, the weight of the weight portion 102a is added to the end portion of the movable electrode 102. Therefore, even when the applied external force is small, the amount of deflection increases, and the movable electrode 102 and the fixed electrode 103 becomes easy to contact, and detection sensitivity can be improved. The shape of the weight portion 102a may be the elliptical shape illustrated in FIG. 1, but is not limited to this shape, and may take various shapes such as a rectangular shape and a circular shape.

<Operation of mechanical quantity sensor>
Next, the operation of the mechanical quantity sensor 100 according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG. 3 is a table for explaining the operation of the mechanical quantity sensor 100, and shows the direction and magnitude of the applied external force and the conduction relationship between the plurality of movable electrodes R1 to R3, L1 to L3 and the fixed electrode 103. It is a table. LF1 to LF3 shown in FIG. 3 represent the direction and magnitude of the external force applied from the negative in the Y-axis direction to the positive with respect to the external force applied to the mechanical quantity sensor 100, respectively, and the external forces LF1 to LF3. The relationship of the sizes of LF1 <LF2 <LF3. RF1 to RF3 represent the direction and magnitude of the external force applied from positive to negative in the Y-axis direction with respect to the external force applied to the mechanical quantity sensor 100, respectively, and the relationship between the magnitudes of the external forces RF1 to RF3. Is RF1 <RF2 <RF3. In FIG. 3, the state in which the movable electrodes R1 to R3 and L1 to L3 are in contact with the fixed electrode 103 is indicated by “◯”, and the state in which the movable electrodes R1 to R3 and L1 to L3 are not in contact with the fixed electrode 103 is illustrated. Indicated by “x”. In the following description, the movable electrode L1 and the movable electrode R1 shown in FIG. 1 have the same length, the movable electrode L2 and the movable electrode R2 have the same length, and the movable electrode L3 and the movable electrode R3. Will be described as having the same length.

  1 to 3, when a small external force LF1 in the positive direction of the Y-axis is applied to the mechanical quantity sensor 100, the movable electrode having a long length among the plurality of movable electrodes R1 to R3 and L1 to L3. L1 bends in the positive direction of the Y-axis, and the weight portion 102aL1 that is the end thereof is displaced to contact the contact portion T3 of the fixed electrode 103. At this time, even if the movable electrode R1 having the same length as the movable electrode L1 is bent in the positive direction of the Y-axis, the movable electrode R1 is not in contact with the fixed electrode 103 because it is separated from the contact portion T2 by the distance k2. In addition, the movable electrodes L2 and L3, which are shorter than the movable electrode L1, have a small amount of deflection (or no deflection) because the applied external force LF1 is small, and do not contact the contact portions T4 and T5, respectively.

  When an external force LF2 in the positive direction of the Y axis that is larger than the external force LF1 is applied, not only the movable electrode L1 but also the movable electrode L2 having a shorter length than the movable electrode L1, the positive direction of the Y axis. The weight portions 102aL1 and 102aL2 which are the end portions of each of the deflections are displaced and contact the contact portions T3 and T4 of the fixed electrode 103, respectively. At this time, even if the movable electrodes R1 and R2 having the same length as the movable electrodes L1 and L2 are bent in the positive direction of the Y axis, they are separated from the contact portions T2 and T1 by the distance k2, respectively. 103 does not touch. Further, the movable electrode L3 having a shorter length than the movable electrode L2 has a small amount of deflection (or does not flex) because the external force LF2 applied is small, and does not contact the contact portion T5.

  Further, when an external force LF3 in the positive direction of the Y axis that is larger than the external force LF2 is applied, not only the movable electrodes L1 and L2 but also the movable electrode L3 having a shorter length than the movable electrode L2, The weight portions 102aL3 which are the respective end portions are displaced and come into contact with the contact portions T3, T4 and T5 of the fixed electrode 103, respectively. At this time, even if the movable electrodes R1 to R3 having the same length as the movable electrodes L1 to L3 are bent in the positive direction of the Y axis, the movable electrodes R1 and R2 are separated from the contact portions T2 and T1 by the distance k2, respectively. The fixed electrode 103 is not contacted because it is separated.

  Similarly, when an external force RF1 applied in the negative direction of the Y axis shown in the drawing is applied, of the plurality of movable electrodes R1 to R3 and L1 to L3, the long movable electrode R1 Only the weight portion 102aR1 that is the end portion is displaced in the negative direction of the Y axis, and contacts the contact portion T3 of the fixed electrode 103. At this time, since the applied external force RF1 is small, the movable electrodes R2 and R3 do not contact the contact portions T2 and T1 of the fixed electrode 103, respectively, and the movable electrode L1 is adjacent to the negative direction of the Y axis. Since the contact part T4 is away from the contact part T4 by the distance k2, no contact is made. Further, when an external force RF2 larger than the external force RF1 is applied, not only the movable electrode R1 but also the movable electrode R2 having a shorter length than the movable electrode R1, the weight portion 102aR2 which is the end thereof contacts the fixed electrode 103. The portions T3 and T2 are in contact with each other. At this time, since the applied external force RF2 is small, the movable electrode R3 does not come into contact with the contact portion T1 of the fixed electrode 103, and the movable electrodes L1 and L2 are in contact portions T4 and T5 adjacent in the opposite direction of the Y direction. Since they are separated from each other by a distance k2, there is no contact. Further, when an external force RF3 larger than the external force RF2 is applied, not only the movable electrodes R1 and R2 but also the movable electrode R3 having a shorter length than the movable electrode R2, the weight portion 102aR3 which is the end thereof is fixed electrode 103. The contact portion T1 is contacted. At this time, the movable electrodes L1 to L3 are arranged such that the movable electrodes L1 and L2 are separated from the contact portions T4 and T5 adjacent in the reverse direction of the Y direction by a distance k2, respectively. It does not touch T5.

  As described above, according to the mechanical quantity sensor 100 according to the first embodiment, the movable electrodes R1 to R3 and L1 to L3 that are in contact with the fixed electrode 103 are different depending on the direction and magnitude of the external force. By detecting which of the movable electrodes R1 to R3 and L1 to L3 is in contact with the fixed electrode 103 based on the presence or absence of conduction, the direction and magnitude of the external force can be detected. Further, according to the mechanical quantity sensor 100 according to the first embodiment, which of the plurality of movable electrodes R1 to R3 and L1 to L3 is in contact with the fixed electrode 103 is determined as to whether or not the movable electrode is in contact with time. By detecting, not only the direction and magnitude of the external force but also the acceleration can be detected.

<Method of manufacturing mechanical quantity sensor>
Next, a manufacturing method of the mechanical quantity sensor 100 according to the first embodiment will be described with reference to FIGS. FIG. 4 is a cross-sectional view showing a schematic structure of the mechanical quantity sensor. FIG. 4A is a view when the semiconductor substrate shown in FIG. 1 is bonded to the glass substrate shown in FIG. It is sectional drawing seen from the AA 'line, (b) is from the BB' line shown in FIG. 1 when the semiconductor substrate shown in FIG. 1 and the glass substrate shown in FIG. 2 are joined. It is sectional drawing seen, (c) is sectional drawing seen from the CC 'line | wire shown in FIG. 1 when the semiconductor substrate shown in FIG. 1 and the glass substrate shown in FIG. 2 are joined. . FIG. 5A is a diagram for explaining a manufacturing process showing a schematic structure of a cross section of a mechanical quantity sensor on a semiconductor substrate side, (a) is a cross-sectional view showing a semiconductor substrate before processing, and (b) is a semiconductor substrate. Sectional drawing which shows the process of forming a recessed part in (c) is sectional drawing which shows the process in the middle of forming a fixing part, a movable electrode, and a fixed electrode in a semiconductor substrate, (d) is a fixing part in a semiconductor substrate, It is sectional drawing which shows the process in which the movable electrode and the fixed electrode were formed. FIG. 5B is an explanatory diagram for explaining a manufacturing process on the semiconductor substrate side of the mechanical quantity sensor. FIG. 6 is a diagram for explaining a manufacturing process showing a schematic structure of a cross section of a mechanical quantity sensor on a glass substrate side, (a) is a cross-sectional view showing a glass substrate before processing, and (b) is a glass substrate. Sectional drawing which shows the process of forming a 1st terminal and a 2nd terminal in (c) is sectional drawing which shows the process of forming a recessed part in a glass substrate, (d) is in the middle of forming a wiring and a penetration electrode in a glass substrate. It is sectional drawing which shows a process, (e) is sectional drawing which shows the process which formed the wiring and the penetration electrode in the glass substrate.

(1) Preparation of semiconductor substrate W (see FIG. 5A (a))
A semiconductor substrate (SOI substrate) W in which a BOX layer (silicon oxide) 106 and a silicon film 107 are formed on a silicon substrate 104 is prepared. The outer circumference of the semiconductor substrate W has a substantially square shape of, for example, 1.55 mm × 1.55 mm, and the thicknesses of the silicon film 107, the BOX layer 106, and the silicon substrate 104 are 30 μm, 2 μm, and 400 μm, respectively. The outer shape of the semiconductor substrate W, the thicknesses of the silicon film 107, the BOX layer 106, and the silicon substrate 104 are merely examples, and are not limited to the above. The silicon film 107 is a layer constituting the fixed portion 101, the movable electrode 102, and the fixed electrode 103a of the mechanical quantity sensor 100. The BOX layer 106 is a layer that joins the silicon film 107 and the silicon substrate 104 and functions as an etching stopper layer. The silicon substrate 104 constitutes the first semiconductor substrate 104 of the mechanical quantity sensor 100. The semiconductor substrate W is manufactured by SIMOX or a bonding method.

(2) Processing of the silicon film 107 (see FIG. 5A (b))
A mask (not shown) for processing the fixed portion 101, the movable electrode 102, and the fixed electrode 103 is formed, and the silicon film 107 is etched through the mask, whereby the fixed portion 101, the movable electrode 102, and A recess 106a is formed except for the position where the fixed electrode 103 is formed. As an etching method, DRIE (Deep Reactive Ion Etching) can be used.

(3) Processing of BOX layer 106 (see FIGS. 5A (c) and 5 (d))
By side-etching the BOX layer 106, the BOX layer 106 in contact with the silicon film 107 at the position where the fixed portion 101, the movable electrode 102, and the fixed electrode 103 are formed is removed. 5A (c) and 5 (d), the silicon film 107 corresponding to the position where the fixed portion 101 and the fixed electrode 103 are formed has an area in contact with the BOX layer 106, and the movable electrode 102 is formed. Even if the etching is performed until the BOX layer 106 in contact with the silicon film 107 at the position where the movable electrode 102 is formed is completely removed, the fixed portion is larger than the area in contact with the BOX layer 106 at the position where the movable electrode 102 is formed. A necessary BOX layer 106 is left between the first semiconductor substrate 104 and the fixed electrodes 103 and 101. 5A (d), the fixed portion 101 and the fixed electrode 103 are formed without being separated from the first semiconductor substrate 104, and the movable electrode 102 is formed separately from the first semiconductor substrate 104. be able to. Examples of the etching method include wet etching using HF dilution (for example, diluting 50% HF to 10%) as an etching solution. Further, the movable electrode 102 can be separated from the semiconductor substrate 104 by dry etching.

(4) Processing of movable electrode 102 and fixed electrode 103 (see FIG. 5B)
The movable electrode 102 and the fixed electrode 103 are preferably formed with a metal film at least on the surface in order to improve the contact performance of the contact surfaces that are in contact with each other. An example of the method is to form a metal film on the semiconductor substrate from an oblique direction. For example, as shown in FIG. 5B, a metal film may be formed on the movable electrode 102 and the fixed electrode 103 by vapor deposition. FIG. 5B shows a simplified configuration of the vapor deposition apparatus 1100, in which 1101 is a chamber, 1102 is a vacuum pump for setting the inside of the chamber 1101 to a predetermined degree of vacuum, and 1003 is a metal raw material for vapor deposition. It is. In FIG. 5B, the vapor deposition process is shown as (a) to (c) in the chamber 1101. As illustrated in FIG. 5B (a), the semiconductor substrate 104 on which the fixed portion 101, the movable electrode 102, and the fixed electrode 103 are formed is disposed obliquely in the chamber 1101, and the metal raw material 1003 is formed in a vacuum, for example, Then, the target atoms are deposited on the semiconductor substrate 103 facing each other by heating and evaporation by electron beam (EB) irradiation or the like. Note that the semiconductor substrate 104 illustrated in FIG. 5B is similar to the semiconductor substrate 104 illustrated in FIG. 4C, and shows a cross section viewed from the line CC ′ illustrated in FIG. 1. As illustrated in FIGS. 5B (b) and 5 (c), the target atoms are deposited on the movable electrode 102 and the fixed electrode 103 while rotating the semiconductor substrate 104 arranged obliquely, whereby the metal films 102m and 103m are formed. It is formed. According to such a vapor deposition method, a metal film can be formed also on the side walls of the movable electrode 102 and the fixed electrode 103. In addition, on the contact surface of the movable electrode 102 and the fixed electrode 103, for example, Ti or Cr may be formed in a thickness of about 30 nm to 100 nm in the lower layer, and Au or the like may be formed in the upper layer in a thickness of about 100 nm to 300 nm.

  Through the above steps, as shown in FIG. 1, the semiconductor substrate 104 on which the fixed portion 101, the movable electrode 102, and the fixed electrode 103 are arranged is formed. Next, a method for manufacturing the glass substrate 105 shown in FIG. 2 will be described with reference to FIG.

(5) Formation of glass substrate 105 (see FIGS. 6A and 6B)
As the glass substrate 105 illustrated in FIG. 6A, a semiconductor substrate, an insulating resin substrate, or the like may be used. Below, the case where the glass material containing a movable ion is used as the glass substrate 105 is demonstrated. As a glass substrate containing movable ions, for example, Tempax (registered trademark) glass may be used. As shown in FIG. 6A, a conductive material 108 having conductivity is formed on a glass substrate 105 by sputtering, screen printing, a CVD (Chemical Vapor Deposition) method, an electrolytic plating method, or the like. Next, as shown in FIG. 6B, a mask (not shown) for processing the first terminal 101a and the second terminal 103a is formed, and the conductive material 108 is etched through the mask. Thus, the first terminal 101a and the second terminal 103a are formed.

(6) Formation of through electrodes 101b and 103b (see FIGS. 6C to 6E)
As illustrated in FIG. 6C, the glass substrate 105 on which the first terminal 101a and the second terminal 103a illustrated in FIG. 6B are formed is inverted, and the first terminal 101a and the second terminal 103a are respectively inverted. In order to form the through electrodes 101b and 103b to be connected, the through holes 105a are formed by sandblasting on the glass substrate 105 on which a predetermined mask is formed at the positions where the through electrodes 101b and 103b are formed. As shown in FIGS. 6D and 6E, the inside of the through hole 105a is electrically conductive using sputtering, conductive paste filling (screen printing), CVD (Chemical Vapor Deposition) method, electrolytic plating method, or the like. Conductive material 109 is formed, a mask (not shown) for processing the wiring terminals 101c and 103c is formed, and the conductive material 109 is etched through the mask, whereby the through electrodes 101b and 103b are formed. And wiring terminals 101c and 103c are formed. For example, a conductive layer made of polycrystalline silicon (Poly-Si) containing conductive impurities is deposited on the inner wall of the through hole by CVD to form the through electrodes 101b and 103b and the wiring terminals 101c and 103c. Also good. As the conductive layer, for example, a metal material (Ti, Cu, etc.) may be used in addition to polycrystalline silicon. Further, the wiring terminals 101c and 103c are formed by a pattern made of, for example, Al so as to be electrically connected to the through electrodes 101b and 103b so as to correspond to the upper surface portions where the through electrodes 101b and 103b are exposed. Also good. These wiring terminals 101c and 103c are connected to a circuit for processing a mechanical quantity detection signal in an electronic device in which the mechanical quantity sensor 100 is mounted.

(7) Bonding of the semiconductor substrate 104 and the glass substrate 105 (see FIGS. 4A to 4C)
The semiconductor substrate 104 on which the fixed portion 101 and the fixed electrode 103 are formed and the glass substrate 105 on which the first terminal 101a and the second terminal 103a and the wiring terminals 101c and 103c are formed are bonded by anodic bonding or the like. At this time, as shown in FIG. 4, the first terminal 101 a and the second terminal 103 a formed on the glass substrate 105 are electrically connected to the fixed portion 101 and the fixed electrode 103 formed on the semiconductor substrate 104, respectively. To be joined. Note that the wiring terminals 101 c and 103 described above may be formed on the glass substrate 105 after the semiconductor substrate 104 and the glass substrate 105 are joined.

  Through the above steps, the mechanical quantity sensor 100 according to the first embodiment of the present invention is formed. According to the mechanical quantity sensor 100 according to the first embodiment, a change in external force can be detected based on the presence or absence of conduction between the movable electrode 102 and the fixed electrode 103, so that an amplification circuit or the like is not necessary, and the manufacturing cost is reduced. Can be reduced.

  FIG. 7 is a plan view showing a modification of the semiconductor substrate 104 in the mechanical quantity sensor 100. As shown in FIG. 7, the mechanical quantity sensor 100 according to the first embodiment of the present invention has a rectangular shape on the surface facing the fixed electrode 103 at the end of the movable electrode 102 (R1 to R3, L1 to L3). A shaped weight portion 102b may be formed. Since the surface facing the fixed electrode 103 protrudes and weight is added, the amount of deflection of the movable electrode 102 (R1 to R3, L1 to L3) is increased even by a small external force, and the movable electrode 102 (R1 to R3, L1 to L1) is increased. L3) and the fixed electrode 103 are likely to come into contact with each other. As a result, even when the applied external force is small, the presence or absence of contact can be detected, so that the detection sensitivity of the external force can be improved.

  The mechanical quantity sensor 100 according to the first embodiment not only makes the lengths of the plurality of movable electrodes 102 (R1 to R3, L1 to L3) different from each other, but also includes the movable electrodes 102 (R1 to R3, L1 to L3) end weights 102a and 102b, the distance between the movable electrode 102 (R1 to R3, L1 to L3) and the fixed electrode 103, and the movable electrode 102 (R1 to R3, L1 to L1). The detection sensitivity of external force can be improved by changing the width and thickness of L3) according to the specifications.

(Second Embodiment)
<Structure of mechanical quantity sensor>
Next, the structure of the mechanical quantity sensor 200 according to the second embodiment of the present invention will be described with reference to FIG. FIG. 8 is a plan view showing a schematic structure of a mechanical quantity sensor 200 according to the second embodiment of the present invention.

  As illustrated in FIG. 8, the mechanical quantity sensor 200 according to the second embodiment includes a semiconductor substrate 204, a fixed portion 201 (201R1 to 201R3, 201L1 to 201L3) formed on the semiconductor substrate 204, a movable electrode 202 (R1 to R3, L1) and a fixed electrode 203. The fixing part 201 is fixed on the semiconductor substrate 204. One end of the movable electrode 202 (R1 to R3, L1) is connected to the fixed portion 201 and is arranged away from the semiconductor substrate 204. Weight portions 202a (202aR1 to 202aR3 and 202aL1) are formed at the other ends of the plurality of movable electrodes 202 (R1 to R3 and L1), respectively. Of the plurality of movable electrodes 202 (R1 to R3, L1), the other ends of the movable electrodes R1 to R3 are rectangular weight portions 202aR1 that protrude toward the opposite surfaces of the fixed electrode 203 as illustrated. 202aR3 is formed. Each of the weight portions 202aR1 to 202aR3 is disposed between the contact portions T6 to T9 among the contact portions T6 to T10 of the fixed electrode 203 by a distance k3 from the contact portions T6 to T9. The distance k3 between the weight portions 202aR1 to 202aR3 and the contact portions T6 to T9 that each of the weight portions 202aR1 to 202aR3 opposes is equal to the weight portions 202aR1 to 202aR3 when an external force in the Y-axis direction shown in the figure is applied. The distance between the contact portions T6 to T9 that face each other is defined. Of the plurality of movable electrodes 202 (R1 to R3, L1), the movable electrode L1 is movable only when an external force from negative to positive in the Y-axis direction is applied in order to detect directionality. It arrange | positions so that the edge part of L1 may contact the contact part T9 of the fixed electrode 203. FIG. At the end of the movable electrode L1, the weight portion 202aL1 may be formed in a rectangular shape protruding toward the contact portion T9 only on the surface facing the contact portion T9 as illustrated. The distance k4 between the weight portion 202aL1 and the contact portion T9 is a distance that can be contacted when an external force from negative to positive in the Y-axis direction is applied. The movable electrode L1 is arranged so as not to come into contact with the fixed electrode 203 even when an external force from positive to negative in the Y-axis direction is applied, and the distance k5 from the weight part 202aL1 to the contact part T10 is set from the distance k4. Is also a large distance. The movable electrode L1 serves to detect whether it is an external force from negative to positive in the Y-axis direction or an external force from positive to negative in the Y-axis direction. Therefore, the movable electrode L1 is more than the other movable electrodes R1 to R3. The length of the weight portion 202aL1, the distance k4 between the weight portion 202aL1 and the contact portion T9, the width of the movable electrode L1 and the like can be adjusted to reduce the applied external force. You may arrange | position so that it may contact the fixed electrode 203 easily. The mechanical quantity sensor 200 is manufactured by the same manufacturing method as the mechanical quantity sensor 100 according to the first embodiment illustrated in FIGS. 5A and 6.

  In the second embodiment, as shown in the drawing, the plurality of movable electrodes 202 (R1 to R3) have the same width, the other end of the same shape, and different lengths. However, the present invention is not limited to this, and it is sufficient that the amount of deflection differs according to the external force applied to the mechanical quantity sensor 200 as in the first embodiment. As in the first embodiment, the plurality of movable electrodes 202 are applied to the mechanical quantity sensor 100 by appropriately changing the length of the movable electrode, the width of the movable electrode, and / or the size / shape of the other end. The amount of deflection may be different depending on the external force applied. Further, similarly to the first embodiment, by appropriately adjusting the distance between each movable electrode 202 and fixed electrode 203, each other end is fixed electrode 203 according to the external force applied to mechanical quantity sensor 200. You may make it contact.

<Operation of mechanical quantity sensor>
Next, the operation of the mechanical quantity sensor 200 according to the second embodiment will be described with reference to FIG. FIG. 9 is a table for explaining the operation of the mechanical quantity sensor 200 shown in FIG. 8. The direction and magnitude of the applied external force, the plurality of movable electrodes 202 (R1 to R3, L1), and the fixed electrode 203. It is a table | surface showing the conduction | electrical_connection relationship. LF1 to LF3 shown in FIG. 9 represent the direction and magnitude of the external force applied from the negative to the positive in the Y-axis direction applied to the mechanical quantity sensor 200, respectively, and the magnitudes of the external forces LF1 to LF3. The relationship is LF1 <LF2 <LF3. RF1 to RF3 represent the direction and magnitude of the external force applied from positive to negative in the Y-axis direction, respectively, and the relationship between the magnitudes of the external forces RF1 to RF3 is RF1 <RF2 <RF3. In FIG. 9, the state where the movable electrodes R1 to R3 and L1 are in contact with the fixed electrode 103 is indicated by “◯”, and the state where the movable electrodes R1 to R3 and L1 are not in contact with the fixed electrode 103 is indicated by “x”. Show. In the following description, it is assumed that the movable electrode L1 and the movable electrode R1 shown in FIG. 8 have the same length.

  The movable electrode R1 has the longest length among the plurality of movable electrodes R1 to R3. When the external forces RF1 to RF3 are applied, the movable electrode R1 comes into contact with the deflection contact portion T9 toward the negative direction of the Y axis, and the external force LF1. When LF3 is applied, it comes into contact with the flexible contact portion T8 in the positive direction of the Y axis. The movable electrode R2 having a shorter length than the movable electrode R1 has a small deflection (or no deflection) when the smallest external force RF1 or LF1 is applied, does not contact the contact portion T8 or T7, and the external forces RF2 and RF3 are When applied, it comes into contact with the deflection contact portion T8 in the negative direction of the Y axis, and when the external forces LF2 and LF3 are applied, it bends in the positive direction of the Y axis and comes into contact with the contact portion T9. When the largest external force RF3 is applied, the movable electrode R3 having a shorter length than the movable electrode R2 comes into contact with the deflection contact portion T6 in the negative direction of the Y axis, and when the largest external force LF3 is applied. , Contact with the flexible contact portion T7 in the positive direction of the Y-axis. On the other hand, the movable electrode L1 for detecting the directivity has the same length as the movable electrode R1, but even when the external forces RF1 to RF3 are applied, the distance from the contact portion T10 is long, so that the negative of the Y axis is Even if it bends in the direction, it does not come into contact with the contact portion T10, and when the external forces LF1 to LF3 are applied, it comes into contact with the deflection contact portion T9 in the positive direction of the Y axis.

  The relationship between the direction and magnitude of the external force applied in the Y-axis direction and the operation state of the movable electrodes R1 to R3 and L1 by the operation of the movable electrodes R1 to R3 and L1 as described above is shown in the table of FIG. As shown. For example, when the external force RF1 is applied, only the movable electrode R1 is in contact with the contact portion T9, and when the external force LF1 is applied, the movable electrode R1 is in contact with the contact portion T8 and the movable electrode L1 is in contact with the contact portion. Touch T9. Thus, the application direction and magnitude of the external force are determined by detecting the electrical continuity state between the fixed portion 201 and the fixed electrode 203 due to the contact of the movable electrode R1 or L1 by the application of the external force RF1 or LF1. Is possible. As shown in the table of FIG. 9, when the external force RF2 is applied, the movable electrodes R1 and R2 come into contact with the contact portions T9 and T8, respectively, and when the external force LF2 is applied, the movable electrodes R1 and R2 are applied. And L1 are in contact with the contact portions T8 and T9, respectively. When the external force RF3 is applied, the movable electrodes R1, R2, and R3 are in contact with the contact portions T9, T8, and T7, respectively. When the external force LF3 is applied, the movable electrodes R1, R2, R3, and L1 contacts the contact portions T8, T7, and T9, respectively.

  According to the mechanical quantity sensor 200 according to the second embodiment, the movable electrodes R1 to R3 that are in contact with the fixed electrode 203 are different depending on the magnitude of the external force, and therefore, which of the movable electrodes R1 to R3 is movable. Detecting the direction and magnitude of the external force by detecting whether the electrode is in contact with the fixed electrode 203 based on the presence or absence of conduction, and determining the direction of the external force using the movable electrode L1 that detects the directionality of the external force. Can do. Further, according to the mechanical quantity sensor 200 according to the second embodiment, by detecting which movable electrode of the plurality of movable electrodes R1 to R3 is in contact with the fixed electrode 203 based on the presence or absence of conduction over time. In addition, not only the direction and magnitude of the external force but also the acceleration can be detected.

(Third embodiment)
<Structure of mechanical quantity sensor>
Next, the structure of the mechanical quantity sensor 300 according to the third embodiment of the present invention will be described with reference to FIGS. 10 and 11 are plan views showing a schematic structure of a mechanical quantity sensor 300 according to the third embodiment of the present invention. 12 is a cross-sectional view showing a schematic structure of the mechanical quantity sensor 300 shown in FIGS. 10 and 11. FIG. 12 (a) is a view showing a bonding of the semiconductor substrate shown in FIG. 10 and the glass substrate shown in FIG. It is sectional drawing which showed the movable electrode D3 at the time of doing, (b) is sectional drawing which showed the movable electrode D2 when joining the semiconductor substrate shown in FIG. 10, and the glass substrate shown in FIG. (C) is sectional drawing which showed the movable electrode D1 when the semiconductor substrate shown in FIG. 10 and the glass substrate shown in FIG. 11 were joined, (d) is the semiconductor substrate shown in FIG. FIG. 12 is a cross-sectional view showing the movable electrode U3 when the glass substrate shown in FIG. 11 and the glass substrate shown in FIG. 11 are joined, and (e) is when the semiconductor substrate shown in FIG. 10 and the glass substrate shown in FIG. It is sectional drawing which showed movable electrode U2 of FIG., (F) is shown in FIG. It is a sectional view showing the movable electrode U1 when bonding the glass substrate shown in the semiconductor substrate and FIG. 11.

  As illustrated in FIG. 10, the fixed portion 301 and the plurality of movable electrodes 302 (D1 to D3, U1 to U3) are disposed on the semiconductor substrate 304. The plurality of movable electrodes 302 (D1 to 3 and U1 to 3) have different lengths, and the length relationship is represented by D3 <D2 <D1 <U3 <U2 <U1. The movable electrodes 302 (D1 to D3, U1 to U3) have flexibility, and one end portions thereof are connected to the fixed portion 301 and are separated from the semiconductor substrate 304. As illustrated in FIG. 11, on the glass substrate 305, when bonded to the semiconductor substrate 304 illustrated in FIG. 10, a fixed portion electrode 301 a connected to the fixed portion 301 and a plurality of movable electrodes according to external force. A plurality of fixed electrodes 303a (303aD1 to 303aD3, 303aU1 to 303aU3) that respectively contact 302 (D1 to 3 and U1 to 3) are arranged. The semiconductor substrate 304 shown in FIG. 10 and the glass substrate 305 shown in FIG. 11 are joined by anodic bonding or the like to form the mechanical quantity sensor 300 having the cross-sectional structure shown in FIG.

  The movable electrode 302 of the mechanical quantity sensor 300 bends in the Z-axis direction shown in the figure in accordance with the applied external force, and the ends thereof are displaced, so that the lower side of the movable electrode 302 in the Z-axis direction shown in the figure. Contact with the fixed electrode 303a arranged in the negative direction of the Z-axis. The mechanical quantity sensor 300 is different from the mechanical quantity sensors 100 and 200 according to the first and second embodiments in that the fixed electrode 303a is disposed to face the lower surface of the end portion of the movable electrode 302. With this configuration, the mechanical quantity sensor 300 can detect the magnitude and direction of the external force in the Z-axis direction.

  As shown in FIG. 12, the mechanical quantity sensor 300 is formed on the glass substrate 305 so that the movable electrodes 302 (D1 to 3 and U1 to 3) can be deflected in the Z-axis direction and their end portions can be displaced. The fixed electrode 303a may be formed such that the height in the Z-axis direction is lower than that of the fixed portion electrode 301a. Due to the difference in height between the fixed part electrode 301a and the fixed electrode 303a, a gap is formed between the movable electrode 302 (D1 to D3, U1 to U3) and the fixed electrode 303a (303aD1 to 303aD3, 303aU1 to 303aU3). The ends of the movable electrodes 302 (D1 to D3, U1 to U3) can be displaced in the Z-axis direction.

  12D to 12F, among the plurality of movable electrodes 302 (D1 to D3, U1 to U3), the lengths of the movable electrodes U1 to U3 are the movable electrodes D1 to D3. Therefore, the end may be bent in the negative direction of the Z-axis in a state where no external force is applied due to the weight, and may be arranged in contact with the fixed electrodes 303aU1 to 303aU3. In addition, as illustrated in FIGS. 12A to 12C, a gap may be provided between the end of the movable electrodes D1 to D3 and the opposed fixed electrodes 303aD1 to 303aD3. .

<Operation of mechanical quantity sensor>
Next, the operation of the mechanical quantity sensor 300 according to the third embodiment will be described with reference to FIG. FIG. 13 is a table for explaining the operation of the mechanical quantity sensor 300 shown in FIGS. 10 to 12, and the direction and magnitude of the applied external force and a plurality of movable electrodes 302 (D1 to D3, U1 to U3). And a fixed electrode 303a (303aD1 to 303aD3, 303aU1 to 303aU3). Note that DF1 to DF3 shown in FIG. 13 are directions of external force applied from positive to negative in the Z-axis direction applied to the mechanical quantity sensor 300 (from the top to the bottom in the figure in the Z-axis direction) and This represents the magnitude, and the relation between the magnitudes of the external forces DF1 to DF3 is DF1 <DF2 <DF3. UF1 to UF3 represent the direction and magnitude of external force applied from negative to positive in the Z-axis direction (from the bottom to the top in the figure in the Z-axis direction), respectively, and the magnitude of the external forces UF1 to UF3. The relationship is UF1 <UF2 <UF3. In FIG. 13, the state in which the movable electrode 302 (D1 to D3, U1 to U3) is in contact with the fixed electrode 303a is indicated by “◯”, and the movable electrode 302 (D1 to D3, U1 to U3) is connected to the fixed electrode 303a. The state of not touching is indicated by “x”.

  The movable electrodes U1 to U3 bend in a state where no external force is applied, and the ends thereof are in contact with the fixed electrodes 303aU1 to 303aU3, respectively. The movable electrode U1 has the longest length among the plurality of movable electrodes 302 (D1 to D3, U1 to D3), and the largest of the external forces UF1 to UF3 applied from the negative to the positive in the Z-axis direction. When the external force UF3 is applied, the end portion is displaced in the positive direction of the Z axis, and is separated from the fixed electrode 303aU1. When the external forces UF3 and UF2 are applied to the movable electrode U2 having a length shorter than that of the movable electrode U1, the external ends UF3 and UF2 of the external forces UF1 to UF3 applied from the negative to the positive in the Z-axis direction are end portions of the Z-axis. It is displaced in the positive direction and moves away from the fixed electrode 303aU2. When the external force UF1 to UF3 applied from the negative in the Z-axis direction to the positive is applied to the movable electrode U3 having a shorter length than the movable electrode U2, the end portion is displaced in the positive direction of the Z-axis. And away from the fixed electrode 303aU1.

  The movable electrodes D1 to D3 are spaced apart from the fixed electrodes 303aD1 to 303aD3, respectively, when no external force is applied. Therefore, the movable electrodes D1 to D3 do not contact the fixed electrodes 303aD1 to 303aD3, respectively, even when the external forces UF1 to UF3 applied from the negative to the positive in the Z-axis direction are applied. The movable electrode D1 is shorter than the movable electrode U3, but is the longest among the movable electrodes D1 to D3, and when external forces DF1 to DF3 applied from positive to negative in the Z-axis direction are applied. In contact with the fixed electrode 303aD1. The movable electrode D2 is shorter than the movable electrode D1, and comes into contact with the fixed electrode 303aD2 when the external forces DF1 and DF2 applied from the positive to the negative in the Z-axis direction are applied. The movable electrode D3 is shorter than the movable electrode D2, and only when the largest external force DF3 is applied among the external forces DF1 to DF3 applied from positive to negative in the Z-axis direction, the fixed electrode 303aD3. Contact with.

  As described above, according to the mechanical quantity sensor 300 according to the third embodiment, the movable electrodes D1 to D3 and U1 that are in contact with the fixed electrode 303a (303aD1 to 303aD3 and 303aU1 to 303aU3) according to the magnitude of the external force. Because U3 is different, by detecting which of the plurality of movable electrodes D1 to D3 and U1 to U3 is in contact with the fixed electrode 303a (303aD1 to 303aD3, 303aU1 to 303aU3) with or without conduction, The direction and magnitude of the external force can be detected. Further, according to the mechanical quantity sensor 300 according to the third embodiment, which of the plurality of movable electrodes D1 to D3 and U1 to U3 is in contact with the fixed electrode 303a (303aD1 to 303aD3, 303aU1 to 303aU3). By detecting whether or not there is continuity over time, not only the direction and magnitude of the external force but also the acceleration can be detected.

<Method of manufacturing mechanical quantity sensor>
Note that the mechanical quantity sensor 300 according to the third embodiment is different from the manufacturing method of the mechanical quantity sensor 100 according to the first embodiment shown in FIG. The height is lower than that of the fixed portion electrode 301a. Accordingly, a method for manufacturing the glass substrate 305 of the mechanical quantity sensor 300 according to the third embodiment will be described below with reference to FIG. 14A and 14B are diagrams for explaining a manufacturing process showing a schematic structure of a cross section of the mechanical quantity sensor 300 on the glass substrate side. FIG. 14A is a cross-sectional view showing a glass substrate before processing, and FIG. Sectional drawing which shows process in the middle of forming fixed part electrode in board | substrate, (c) is sectional drawing which shows process in the middle of forming fixed part electrode and fixed electrode in glass substrate, (d) is fixing part electrode in glass substrate And (e) is a cross-sectional view showing a process in the middle of forming the through electrode on the glass substrate, and (f) forming the through electrode and the wiring terminal on the glass substrate. It is sectional drawing which shows the process in the middle of doing.

  As the glass substrate 305, a semiconductor substrate, an insulating resin substrate, or the like may be used in the same manner as the glass substrate 105 illustrated in FIG. Below, the case where the glass material containing a movable ion is used as the glass substrate 305 is demonstrated. As a glass substrate containing movable ions, for example, Tempax (registered trademark) glass may be used. As shown in FIG. 14A, a conductive material 308 having conductivity is formed on a glass substrate 305 by sputtering, screen printing, a CVD (Chemical Vapor Deposition) method, an electrolytic plating method, or the like. Next, as shown in FIG. 14B, a mask (not shown) is formed in order to process the convex portion 308a for increasing the height of the fixed portion electrode 301a to be higher than the fixed electrode 101a. The protrusion 308a is formed by etching the conductive material 308 through the mask. Next, as illustrated in FIG. 14C, a conductive material 309 is formed on the glass substrate 305 so as to cover the convex portion 308a and the formation position of the fixed electrode 303a. The conductive material 309 may be formed by a method similar to that of the conductive material 308. Next, as shown in FIG. 14D, a mask (not shown) for processing the fixed electrode 303a and the fixed portion electrode 301a is formed, and the conductive material 309 is etched through the mask. A recess 309a is formed except for the position where the fixed electrode 303a and the fixed portion electrode 301a are formed. As an etching method, DRIE (Deep Reactive Ion Etching) can be used. Thereby, the fixed electrode 303a and the fixed portion electrode 301a having a height higher than that of the fixed electrode 303a are formed.

  Next, as illustrated in FIGS. 14E to 14G, the glass substrate 305 on which the fixed electrode 303a and the fixed portion electrode 301a illustrated in FIG. 14D are formed is inverted, and FIG. To (e) in the same manner as the manufacturing method shown in FIG. 14 (g), as shown in FIG. 14 (g), wiring terminals 301b and 303b (303bD1 to 303bD3, respectively) connected to the fixed portion electrode 301a and the fixed electrode 303a, respectively. 303bU1 to 303bU3). The wiring terminals 301b and 303b are connected to the fixed portion electrode 301a and the fixed electrode 303a by through electrodes formed inside the glass substrate 305, respectively. As shown in FIG. 14E, a through hole 305a is formed by sandblasting or the like on a glass substrate 305 on which a predetermined mask is formed in accordance with the formation positions of the fixed portion electrode 301a and the fixed electrode 303a. As shown in FIGS. 14 (f) and 14 (g), the through hole 305 a is electrically conductive using sputtering, conductive paste filling (screen printing), CVD (Chemical Vapor Deposition) method, electrolytic plating method, or the like. Conductive material 310 is formed, a mask (not shown) for processing wiring terminals 301b and 303b (303bD1 to 303bD3, 303bU1 to 303bU3) is formed, and the conductive material 310 is etched through the mask. By doing so, the through electrodes and wiring terminals 301b and 303b may be formed. For example, a through electrode and wiring terminals 301b and 303b may be formed by depositing a conductive layer made of polycrystalline silicon (Poly-Si) containing a conductive impurity on the inner wall of the through hole by a CVD method. As the conductive layer, for example, a metal material (Ti, Cu, etc.) may be used in addition to polycrystalline silicon. Further, the wiring terminals 301b and 303b may be formed by a pattern made of, for example, Al so as to be electrically connected to the through electrode corresponding to the upper surface portion where the through electrode is exposed. These wiring terminals 301b and 303b are connected to a circuit for processing a mechanical quantity detection signal in an electronic device in which the mechanical quantity sensor 300 is mounted.

  Next, the semiconductor substrate 304 on which the fixed portion 301 and the movable electrode 302 shown in FIG. 10 are formed and the glass substrate 305 on which the fixed electrode 303a and the fixed portion electrode 301a shown in FIG. To join. At this time, as illustrated in FIG. 12, the fixing portion electrode 301 a formed on the glass substrate 305 and the fixing portion 301 formed on the semiconductor substrate 304 are joined so as to be electrically connected.

  In the third embodiment, the plurality of movable electrodes 302 (D1 to D3, U1 to U3) have the same width, the other end portion having the same shape, and Although the lengths are different from each other, the present invention is not limited to this, and, as in the first and second embodiments, as long as the amount of deflection differs according to the external force applied to the mechanical quantity sensor 300. Good. As in the first and second embodiments, the plurality of movable electrodes 302 can be obtained by appropriately changing the length of the movable electrode, the width of the movable electrode, and / or the size / shape of the other end. It is sufficient that the amount of deflection differs according to the external force applied to 300. Similarly to the first and second embodiments, the other end portions of the movable electrodes 302 and the fixed electrodes 303a can be adjusted according to the external force applied to the mechanical quantity sensor 300 by appropriately adjusting the distance between the movable electrodes 302 and the fixed electrodes 303a. You may make it contact with the fixed electrode 203a.

  Through the above steps, when an external force in the Z-axis direction is applied, the mechanical quantity sensor 300 is produced in which the end portion of the movable electrode 302 is displaced to be in contact with or not in contact with the fixed electrode 303a. According to the mechanical quantity sensor 300 according to the third embodiment, a change in external force can be detected by the presence or absence of conduction between the movable electrode 302 and the fixed electrode 303, so that an amplification circuit or the like is not necessary, and the manufacturing cost is reduced. Can be reduced.

(Fourth embodiment)
<Structure of complex mechanical sensor>
Next, the structure of the composite mechanical quantity sensor 400 according to the fourth embodiment of the present invention will be described with reference to FIGS. 15 and 16. 15 and 16 are plan views showing a schematic structure of a composite mechanical quantity sensor 400 according to the fourth embodiment of the present invention.

  “Composite mechanical quantity sensor” refers to two or more sensors having different characteristics such as detection direction, type of detected mechanical quantity, and measurement range of detected mechanical quantity on the same substrate or in the same substrate. In this case, the sensor is configured as one mechanical quantity sensor.

  As shown in FIG. 15, an X-axis dynamic quantity sensor 400x that detects the direction and magnitude of the external force in the X-axis direction on the same substrate 405, and Y-axis dynamics that detects the direction and magnitude of the external force in the Y-axis direction. A quantity sensor 400y and a Z-axis dynamic quantity sensor 400z for detecting the direction and magnitude of the external force in the Z-axis direction are arranged. In FIG. 15, the X-axis dynamic quantity sensor 400x and the Y-axis dynamic quantity sensor 400y illustrate the same shape as the dynamic quantity sensor 100 shown in FIG. 1, and the Z-axis dynamic quantity sensor 400z is shown in FIG. Although the shape similar to the illustrated mechanical quantity sensor 300 is illustrated, it is not limited to this shape.

  The X-axis mechanical quantity sensor 400x shown in FIG. 15 includes a fixed portion 401x (401xR1 to 401xR3, 401xL1 to 401xL3), a movable electrode 402x (402xR1 to 402xR3, 402xL1 to 402xL3), and a weight formed at the end of the movable electrode 402x. A portion 402ax (402axR1 to 402axR3, 402axL1 to 402axL3) and a fixed electrode 403x are included. The Y-axis mechanical quantity sensor 400y includes a fixed part 401y (401yR1 to 401yR3, 401yL1 to 401yL3), a movable electrode 402y (402yR1 to 402yR3, 402yL1 to 402yL3), and a weight part 402ay (402ayR1 to 402yR1) formed at the end of the movable electrode 402y. 402ayR3, 402ayL1 to 402ayL3), and a fixed electrode 403y. The Z-axis mechanical quantity sensor 400z includes a fixed portion 401z and a movable electrode 402z (402zD1 to 402zD3, 402zU1 to 402zU3).

  As shown in FIG. 16, on the lower side in the Z-axis direction of the fixed part 401x (401xR1 to 401xR3, 401xL1 to 401xL3) and the fixed part 401y (401yR1 to 401yR3, 401yL1 to 401yL3) shown in FIG. First terminals 401ax (401axR1 to 401axR3, 401axL1 to 401axL3) and first terminals 401ay (401ayR1 to 401ayR3, 401ayL1 to 401ayL3) are arranged at corresponding positions on the glass substrate 405. Further, on the lower side in the Z-axis direction of the fixing portion 401z shown in FIG. 15, the fixing portion electrode 401az is arranged at a corresponding position on the glass substrate 405 as shown in FIG. As shown in FIG. 16, fixed electrodes 403az (on the lower side in the Z-axis direction at the ends of the movable electrodes 402z (402zD1 to 402zD3, 402zU1 to 402zU3) are respectively located on the glass substrate 405. 403azD1 to 403azD3, 403azU1 to 403azU3) are arranged. Further, second terminals 403ax and 403ay are arranged at corresponding positions on the glass substrate 405 as shown in FIG. 16 below the fixed electrodes 403x and 403y shown in FIG. Is done. The first terminals 401ax and 401ay and the second terminals 403ax and 403ay may be formed by the same manufacturing method as the first terminal 101a and the second terminal 103a of the mechanical quantity sensor 100 illustrated in FIG. Further, the fixed part electrode 401az and the fixed electrode 403az may be formed by the same manufacturing method as the fixed part electrode 301a and the fixed electrode 303a of the mechanical quantity sensor 300 illustrated in FIG. 14, respectively.

  In the fourth embodiment, the plurality of movable electrodes 402x (402xR1 to 402xR3, 402xL1 to 402xL3), 402y (402yR1 to 402yR3, 402yL1 to 402yL3), 402z (402zD1 to 402zD3, 402zU1 to 402zU3) are illustrated. The shape is not limited, and the amount of deflection may be different depending on the external force applied to the composite mechanical quantity sensor 400 as in the first to third embodiments. The plurality of movable electrodes 402x, 402y, and 402z can be changed by appropriately changing the length of the movable electrode, the width of the movable electrode, and / or the size / shape of the other end as in the first to third embodiments. As long as the amount of deflection differs according to the external force applied to the composite mechanical quantity sensor 400, it is sufficient. Further, as in the first to third embodiments, the distance between the movable electrodes 402x, 402y, and 402z and the fixed electrodes 403x, 403y, and 403az is appropriately adjusted to be applied to the composite mechanical quantity sensor 400. Depending on the external force, the other end may be in contact with the fixed electrodes 403x, 403y, and 403az.

  According to the composite mechanical quantity sensor 400 according to the fourth embodiment of the present invention having the above-described configuration, the direction and magnitude of the external force in the X-axis direction, the Y-axis direction, and the Z-axis direction are detected. Can do. Further, by detecting which of the plurality of movable electrodes 402x, 402y, and 402z is in contact with the fixed electrodes 403x, 403y, and 403az with or without continuity over time, only the direction and the magnitude of the external force can be detected. And acceleration can also be detected. Note that the composite mechanical quantity sensor 400 can be manufactured by the same simple manufacturing method as the mechanical quantity sensor 100 and the mechanical quantity sensor 300 described above, and thus the manufacturing cost can be reduced.

(Fifth embodiment)
<Structure of complex mechanical sensor>
Next, the structure of the composite mechanical quantity sensor 500 according to the fifth embodiment of the present invention will be described with reference to FIGS. 17 and 18. FIG. 17 is a plan view showing a schematic structure of a composite mechanical quantity sensor 500 according to the fifth embodiment of the present invention. 17 includes an X-axis dynamic quantity sensor 500x that detects the direction and magnitude of the external force in the X-axis direction, and a Y-axis dynamic quantity that detects the direction and magnitude of the external force in the Y-axis direction. A quantity sensor 500y and a Z-axis dynamic quantity sensor 500z for detecting the direction and magnitude of the external force in the Z-axis direction. FIG. 18 is a diagram for explaining a cross-sectional structure of the composite mechanical quantity sensor 500 shown in FIG. 17, and FIG. 18A shows a partial structure of the X-axis mechanical quantity sensor 500x shown in FIG. It is a top view, (b) is a top view which showed the structure of a part of Z-axis dynamic quantity sensor 500z shown in FIG. 17, (c) is the X-axis dynamic quantity sensor 500x shown in (a). (I) It is sectional drawing seen from the line, (d) is sectional drawing which looked at the Z-axis mechanical quantity sensor 500z shown to (b) from (i) line, (e) is (a). FIG. 6 is a cross-sectional view of the X-axis mechanical quantity sensor 500x shown in FIG. 5 viewed from the line (ii), and FIG. (G) is a cross-sectional view of the X-axis mechanical quantity sensor 500x shown in (a) as viewed from the line (iii), and (h) It is a cross-sectional view of the Z-axis mechanical sensor 500z from (iii) line shown in (b).

  Similar to the composite mechanical quantity sensor 400 according to the fourth embodiment, the composite mechanical quantity sensor 500 according to the fifth embodiment detects an external force in three axial directions. FIG. 17 shows a semiconductor substrate 504 on which an X-axis dynamic quantity sensor 500x, a Y-axis dynamic quantity sensor 500y, and a Z-axis dynamic quantity sensor 500z are formed. As illustrated in FIG. 17, the X-axis mechanical quantity sensor 500x includes a fixed portion 501x (501xR1 to 501xR3, 501xL1 to 501xL3), a movable electrode 502x (502xR1 to 502xR3, 502xL1 to 502xL3), and a fixed electrode 503x. The Y-axis mechanical quantity sensor 500y includes a fixed portion 501y (501yR1 to 501yR3, 501yL1 to 501yL3), a movable electrode 502y (502yR1 to 502yR3, 502yL1 to 502yL3), and a fixed electrode 503y. The Z-axis mechanical quantity sensor 500z includes a fixed part 501z (501zD1 to 501zD3, 501zU1 to 501zU3) and a movable electrode 502z (502zD1 to 502zD3, 502zU1 to 502zU3). In addition, the fixed part 501x (501xR1 to 501xR3, 501xL1 to 501xL3) and the fixed part 501y (501yR1 to 501yR3, 501yL1 to 501yL3) have contact parts T1x to T7x and contact parts T1y to T7y, respectively, as illustrated. Also good.

  18 illustrates only the X-axis dynamic quantity sensor 500x and the Z-axis dynamic quantity sensor 500z, but the Y-axis dynamic quantity sensor 500y has an X-axis dynamic quantity sensor as illustrated in FIG. It is not shown in FIG. 18 because it has the same structure as 500x and should be arranged at a position where an external force in the Y-axis direction can be detected. In the following description, the Y-axis dynamic quantity sensor 500y is manufactured through the same manufacturing process as the X-axis dynamic quantity sensor 500x.

  As illustrated in FIG. 17, the composite mechanical quantity sensor 500 includes a mask for processing the fixed portions 501x, 501y, and 501z, the movable electrodes 502x, 502y, and 502z, and the fixed electrodes 503x and 503y on the semiconductor substrate 504. (Not shown) is formed, and the semiconductor substrate 504 is etched through the mask, whereby the fixed portions 501x, 501y, 501z, the movable electrodes 502x, 502y, 502z, and the fixed electrodes 503x, 503y are formed. You may form the recessed parts 505x, 505y, and 505z except for. As shown in FIG. 18C, the semiconductor substrate 504 may be a three-layer semiconductor substrate in which a silicon film 506, a BOX layer 507, and a silicon substrate 508 are stacked. The fixed portions 501x, 501y, 501z, the movable electrodes 502x, 502y, 502z, and the fixed electrodes 503x, 503y may be formed by a manufacturing method similar to that of the semiconductor substrate 104 according to the first embodiment illustrated in FIG. 5B.

  A glass substrate similar to the glass substrate 405 according to the fourth embodiment shown in FIG. 16 may be bonded to the lower side of the semiconductor substrate 504 shown in FIG. 17 in the Z-axis direction. 18C to 18H show cross sections in which the semiconductor substrate 504 and the glass substrate 505 of the composite mechanical quantity sensor 500 are joined. As shown in FIGS. 18C to 18H, the glass substrate 505 is formed on the first terminals 501ax, 501ay, and the like by the same manufacturing method as the glass substrate 405 according to the fourth embodiment shown in FIG. The second terminals 503ax and 503ay, the fixed part electrode 501az, and the fixed electrode 503az may be formed.

  In the fifth embodiment, the plurality of movable electrodes 502x (502xR1 to 502xR3, 502xL1 to 502xL3), 502y (502yR1 to 502yR3, 502yL1 to 502yL3), 502z (502zD1 to 502zD3, 502zU1 to 502zU3) are illustrated. The shape is not limited, and the amount of deflection may be different depending on the external force applied to the composite mechanical quantity sensor 500 as in the first to fourth embodiments. The plurality of movable electrodes 502x, 502y, and 502z can be changed by appropriately changing the length of the movable electrode, the width of the movable electrode, and / or the size / shape of the other end as in the first to fourth embodiments. As long as the amount of deflection differs depending on the external force applied to the composite mechanical quantity sensor 500, it is sufficient. Similarly to the first to fourth embodiments, the distance between the movable electrodes 502x, 502y, and 502z and the fixed electrodes 503x, 503y, and 503az is appropriately adjusted to be applied to the composite mechanical quantity sensor 500. Each other end may be in contact with the fixed electrodes 503x, 503y, and 503az in accordance with an external force.

  According to the composite mechanical quantity sensor 500 according to the fifth embodiment of the present invention having the above-described configuration, the direction and magnitude of the external force in the X-axis direction, the Y-axis direction, and the Z-axis direction are detected. Can do. In addition, by detecting which movable electrode of the plurality of movable electrodes 502x, 502y, and 502z is in contact with the fixed electrodes 503x, 503y, and 503az with or without continuity over time, only the direction and magnitude of the external force can be detected. And acceleration can also be detected. The composite mechanical quantity sensor 500 can be manufactured by a simple manufacturing method similar to that of the composite mechanical quantity sensor 400 described above, and thus manufacturing costs can be reduced.

(Sixth embodiment)
<Structure of mechanical quantity sensor>
Next, the structure of the mechanical quantity sensor 600 according to the sixth embodiment of the present invention will be described with reference to FIG. FIG. 19 is a plan view showing a schematic structure of a mechanical quantity sensor 600 according to the sixth embodiment of the present invention. FIG. 19 illustrates a mechanical quantity sensor 600 that detects the direction and magnitude of the external force in the Y-axis direction. As illustrated in FIG. 19, the mechanical quantity sensor 600 includes a fixed portion 601R1 to 601R3, a movable electrode 602 (R1 to R3), a weight portion 602aR1 to 602aR3, and a fixed electrode 603R1 to 603R3 formed on a semiconductor substrate 604. The The mechanical quantity sensor 600 may be formed by the same manufacturing method as the combined mechanical quantity sensor 500 according to the fifth embodiment illustrated in FIG.

  As shown in FIG. 19, weight portions 602aR1 to 602aR3 are formed at positions facing the fixed electrodes 603R1 to 603R3 at the ends of the plurality of movable electrodes 602 (R1 to R3), respectively. The weight portions 602aR1 to 602aR3 extend from the end of the movable electrode 602 (R1 to R3) extending in the X-axis direction to a position facing the fixed electrodes 603R1 to 603R3 by the length y1 in the Y-axis direction, respectively. The end portion of 602aR3 is arranged to be separated from the fixed electrodes 603R1 to 603R3 by a distance k6 in the Y-axis direction.

  The movable electrode 602 (R1 to R3) bends when an external force in the Y-axis direction is applied, and the ends of the weight portions 602aR1 to 602aR3 are displaced in the Y-axis direction and come into contact with the fixed electrodes 603R1 to 603R3. At this time, since a plurality of movable electrodes 602 (R1 to R3) having different lengths are formed on the semiconductor substrate 604, any of the movable electrodes 602 (R1) among the plurality of movable electrodes 602 (R1 to R3) is formed. The direction and magnitude of the external force can be detected by detecting whether or not R3) is in contact with the fixed electrodes 603R1 to 603R3 based on the presence or absence of conduction. Note that the movable electrode 602 has a weight portion 602a weighted at the end, and in the shape shown in FIG. 19, the weight portion 602a has a rectangular shape that is long in the Y-axis direction. Even if it exists, the deflection amount of the movable electrode 602 becomes large, it becomes easy to contact the fixed electrode 603, and detection sensitivity can be improved.

  In the sixth embodiment, the plurality of movable electrodes 602 (R1 to R3) are not limited to the illustrated shapes, and are applied to the mechanical quantity sensor 600 as in the first to fifth embodiments. The amount of deflection may be different depending on the external force applied. In the plurality of movable electrodes 602 (R1 to R3), as in the first to fifth embodiments, the length of the movable electrode, the width of the movable electrode, and / or the size / shape of the other end are appropriately changed. Therefore, the amount of deflection may be different depending on the external force applied to the mechanical quantity sensor 600. Further, similarly to the first to fifth embodiments, the distance between each movable electrode 602 (R1 to R3) and the fixed electrodes 603R1 to 603R3 is appropriately adjusted according to the external force applied to the mechanical quantity sensor 600. Each of the other end portions may be in contact with the fixed electrodes 603R1 to 603R3.

  FIG. 19 illustrates a mechanical quantity sensor 600 that detects an external force in the Y-axis direction, but the same structure is applied to a mechanical quantity sensor that detects an external force in the X-axis direction and the Z-axis direction. You may apply. In the case of a mechanical quantity sensor that detects an external force in the Z-axis direction, similarly to the mechanical quantity sensor 300 according to the third embodiment, on the lower side in the Z-axis direction of the semiconductor substrate 604 shown in FIG. You may arrange | position the glass substrate in which the fixed electrode was formed in the position facing the lower surface of the edge part of the movable electrode 602 (R1-R3).

  According to the mechanical quantity sensor 600 according to the sixth embodiment of the present invention having the above-described configuration, the direction and magnitude of the external force in the X-axis direction, the Y-axis direction, or the Z-axis direction can be detected. . Further, by detecting which movable electrode of the plurality of movable electrodes 602 (R1 to R3) is in contact with the fixed electrodes 603R1 to 603R3 based on the presence or absence of conduction over time, not only the direction and magnitude of the external force are detected. Acceleration can also be detected. The mechanical quantity sensor 600 can be manufactured by the same simple manufacturing method as that of the composite mechanical quantity sensor 500 described above, so that the manufacturing cost can be reduced.

(Seventh embodiment)
<Structure of mechanical quantity sensor>
Next, the structure of the mechanical quantity sensor 700 according to the seventh embodiment of the present invention will be described with reference to FIGS. 20 and 21 are plan views showing a schematic structure of a mechanical quantity sensor 700 according to the seventh embodiment of the present invention.

  As illustrated in FIG. 20, the mechanical quantity sensor 700 includes a fixed portion 701, a plurality of movable electrodes 702-1 to 702-8 that extend radially from the fixed portion 701 in a plurality of directions, and a plurality of them. Of the movable electrodes 702-1 to 702-8, and a plurality of fixed electrodes 703 in which the plurality of weights 702a1 to 702a8 are displaced according to the applied external force. 1-703-8. Further, as illustrated in FIG. 21, the first terminal 701 a is formed on the glass substrate 705 bonded to the semiconductor substrate 704 at a position corresponding to the fixing portion 701, and a plurality of fixed electrodes 703-1 to 703-. A plurality of second terminals 703 a 1 to 703 a 8 are formed at positions corresponding to 8. The mechanical quantity sensor 700 may be manufactured by the same manufacturing method as the mechanical quantity sensor 100 according to the first embodiment.

  As shown in FIG. 20, the plurality of movable electrodes 702-1 to 702-8 extend from the fixed portion 701 in different directions, and are formed at the ends of the movable electrodes 702-1 to 702-8. The parts 702a1 to 702a8 are displaced in different directions depending on the direction of the applied external force. By having this configuration, the mechanical quantity sensor 700 is not limited to the external force in the three-axis directions of the X, Y, and Z axes, but can determine the direction and magnitude of a plurality of external forces according to the direction in which the movable electrode 702 is disposed. Can be detected. Thereby, the mechanical quantity sensor 700 can increase variations in the direction and magnitude of the external force to be detected.

  In the seventh embodiment, the plurality of movable electrodes 702-1 to 702-8 is not limited to the illustrated shape, and the mechanical quantity sensor 700 is similar to the first to sixth embodiments. It is sufficient that the amount of deflection differs according to the applied external force. In the plurality of movable electrodes 702-1 to 702-8, as in the first to seventh embodiments, the length of the movable electrode, the width of the movable electrode, and / or the size / shape of the other end are appropriately changed. Accordingly, the amount of deflection may be different depending on the external force applied to the mechanical quantity sensor 700. Further, as in the first to sixth embodiments, the distance between the movable electrodes 702-1 to 702-8 and the fixed electrodes 703-1 to 703-8 is appropriately adjusted to be applied to the mechanical quantity sensor 700. Depending on the external force applied, each of the other end portions may be in contact with the fixed electrodes 703-1 to 703-8.

  According to the mechanical quantity sensor 700 according to the seventh embodiment of the present invention having the above-described configuration, the direction and magnitude of various external forces are not limited to the X-axis direction, the Y-axis direction, and the Z-axis direction. Can be detected. In addition, by detecting which movable electrode of the plurality of movable electrodes 702-1 to 702-8 is in contact with the fixed electrodes 703-1 to 703-8 based on the presence or absence of conduction over time, the direction of external force and Not only the size but also the acceleration can be detected. The mechanical quantity sensor 700 can be manufactured by a simple manufacturing method similar to that of the above-described mechanical quantity sensor 100, and thus manufacturing costs can be reduced.

Example 1
Hereinafter, a specific configuration of the movable electrode shown in the first to seventh embodiments of the present invention will be described as Example 1 with reference to FIGS. 22 to 24.

  FIG. 22 is a schematic diagram for explaining the configuration of the movable electrode 802 according to the first embodiment. The movable electrode 802 shown in FIG. 22 has a fixed end A1 and a displacement end B1, and has a weight portion 802a at the displacement end B1. The displacement end B1 is displaced in the X-axis direction by gravity to the position indicated as the displacement end B2. At this time, the displacement distance from the displacement end B1 of the movable electrode 802 to the displacement end B2 is defined as a deflection amount Δ. In addition, although the weight part 802a is illustrated as a black dot in FIG. 22, the position where the weight part 802a is disposed is illustrated, and is not limited to the illustrated shape. The fixed end A1 corresponds to the fixed portion shown in the first to seventh embodiments, and the displacement ends B1 and B2 correspond to the end portions of the movable electrodes shown in the first to seventh embodiments. FIG. 23 is a schematic diagram for explaining the configuration of the movable electrode according to the first embodiment. FIG. 23A is a schematic structure of the movable electrode 802 having the weight portion 802b similar to the weight portion 602a illustrated in FIG. (B) shows a schematic structure of a movable electrode 802 having a weight portion 802c which is a modification of the weight portion 802b shown in (a). FIG. 24 is a table showing the relationship between the amount of deflection Δ when the length l of the movable electrode 802, the length y of the weight portion 802b, and the width x of the weight portion shown in FIG. It is.

The amount of deflection Δ (μm) is such that the length of the movable electrode 802 is l (μm), the width is w (μm), the thickness is t (μm), the mass of the weight portion 802a is m (g), and the Young of the movable electrode 802 When the rate is E (GPa) and the applied gravitational acceleration is g (m / s ² ), it is expressed by the following formula 1.

For example, when the weight portion 802a shown in FIG. 22 is formed of silicon Si, the Si density is ρ (g / cc), the Si1 side length is w (μm), and the one side is the thickness t of the movable electrode 802. Assuming that the mass m (g) corresponding to a cube having the same t (μm) as (μm) is given, the mass m (g) of the weight portion 802a is expressed by the following mathematical formula 2.
m = ρ × t × w ² (Formula 2)

Here, for example, the length l of the movable electrode 802 is 1500 μm, the width w is 3 μm, the thickness t is 30 μm, the Si density ρ is 2.3 g / cc, the Young's modulus E of the movable electrode 802 is 190 Gpa, and the applied gravity When the acceleration g is 9.8 m / s ² and the deflection amount Δ is calculated based on the above formulas 1 and 2, the deflection amount Δ is 5.34 × 10 ⁻⁴ (μm). Since it is difficult to detect the displacement of the movable electrode 802 with the value of this deflection amount Δ, the results of measuring the deflection amount Δ by changing each dimension of the weight portion are shown in FIG. An embodiment for realizing a practical deflection amount Δ will be described with reference to FIGS.

As shown in FIG. 23A, the weight portion 802b has a length x (μm) in the X-axis direction and a length y (μm) in the Y-axis direction. Here, the Si density of the weight portion 802b illustrated in FIG. 23A is ρ (g / cc), and the weight portion 802b has the same thickness t (μm) as the thickness t (μm) of the movable electrode 802, and the X axis. Assuming that a mass m (g) corresponding to a rectangular parallelepiped having a length x (μm) in the direction and a length y (μm) in the Y-axis direction, the mass m (g) of the weight portion 802a is expressed by the following mathematical formula 3. It is represented by
m = ρ × t × x × y (Formula 3)

  FIG. 24 shows the measurement results of the deflection amount Δ when the length l of the movable electrode 802, the length y of the weight portion 802b, and the width x of the weight portion shown in FIG. The amount of deflection Δ may be a numerical value obtained by Equation 1 and Equation 3 above. 24A shows a measured value of the deflection amount Δ when the length l of the movable electrode 802 is changed, and FIG. 24B shows the length l of the movable electrode 802 and the length of the weight portion 802b. The measured value of the deflection amount Δ when y is changed is shown, and (c) shows the measured value of the deflection amount Δ when the width x of the weight portion is changed. As shown in FIG. 24, in any of the cases (a) to (c), the width w of the movable electrode is 3 μm, the thickness t is 30 μm, and the thickness of the weight portion 802b is the same as the thickness t of the movable electrode. It is assumed that measurement was performed at 30 μm. Further, the Si density ρ, the Young's modulus E of the movable electrode 802, and the applied gravitational acceleration g are set to the same conditions.

  Referring to FIG. 24, in order to generate a deflection amount Δ of about 2 μm, (a) when measuring by changing the length l of the movable electrode 802, the width x of the weight portion 802b is 3 μm and the length y is 3 μm. Then, it is understood that the length l of the movable electrode needs to be about 24000 μm. Further, in order to produce a deflection amount Δ of about 2 μm, (b) when the length l of the movable electrode 802 and the length y of the weight portion 802 b are changed and measured, the width x of the weight portion 802 b is 3 μm. It can be seen that the length l of the movable electrode 802 and the length y of the weight portion 802b must each be about 25000 μm. Further, in order to generate a deflection amount Δ of about 2 μm, (c) when measuring by changing the weight portion width x, if the length l of the movable electrode and the length y of the weight portion are 1500 μm, the weight It can be seen that the width t of the portion needs to be 25 μm.

  As described above, it was confirmed that the deflection amount Δ is set to a practical displacement amount by adding the weight portion 802b to the movable electrode 802.

  FIG. 23B shows a modification of the movable electrode 802 shown in FIG. FIG. 23A illustrates a rectangular parallelepiped weight portion 802b. However, the weight portion 802b is not limited to this shape, and a weight portion 802b extending in the Y-axis direction is provided like the weight portion 802c illustrated in FIG. The shape may be bent several times up and down in the X-axis direction. By having this shape, the weight part 802c can make the length y2 of the weight part 802c shown in FIG. 23B in the Y-axis direction shorter than the length y of the weight part 802b. This makes it possible to manufacture a mechanical quantity sensor that can be mounted on an electronic device without increasing the chip size.

(Example 2)
Next, as Example 2, a specific configuration of the movable electrode shown in the first to seventh embodiments of the present invention will be described with reference to FIGS. 25 to 32.

  FIG. 25 is a schematic diagram for explaining the configuration of the movable electrode 902 according to the second embodiment. FIG. 25A is a weight portion 902 a connected to the fixed portion 901 and disposed at a position facing the fixed electrode 903. The schematic structure of the movable electrode 902 which has this is shown, (b) shows the schematic structure which expanded the B part shown to (a), (c) The schematic structure which expanded the C part shown to (a) Indicates.

  As shown in FIGS. 25A and 25B, the weight portion 902a of the movable electrode 902 has a predetermined gap G (see FIG. 26) from the fixed electrode 903 arranged facing the positive direction of the Y axis. ). When an external force is applied in the positive direction of the Y axis, the weight portion 902a is displaced and comes into contact with the fixed portion 903.

  As illustrated in FIG. 25B, the weight portion 902a of the movable electrode 902 according to the second embodiment includes a plurality of horizontal portions 902b (902b-1 to 902b-9) and a plurality of vertical portions 902c (902c-1). 902c-8) and a plurality of contact portions 902d (902d-1 to 902d-9). The plurality of horizontal portions 902b (902b-1 to 902b-9) are connected to the movable electrode 902, are separated by a gap α (see FIG. 26), extend in the positive direction of the Y axis, and are arranged in parallel. . The plurality of vertical portions 902c (902c-1 to 902c-8) are arranged between the plurality of horizontal portions 902b (902b-1 to 902b-9) with respect to the plurality of horizontal portions 902b (902b-1 to 902b-9). Extend and connect in the vertical direction. The plurality of contact portions 902d (902d-1 to 902d-9) are formed at end portions of the plurality of horizontal portions 902b (902b-1 to 902b-9), and contact the fixed electrode 903 when an external force is applied. In this manner, a predetermined gap G (see FIG. 26) is disposed opposite the fixed electrode. The plurality of horizontal portions 902b (902b-1 to 902b-9), the plurality of vertical portions 902c (902c-1 to 902c-8), and the plurality of contact portions 902d (902d-1 to 902d-9) are the same. You may have a shape.

  As shown in the drawing, the plurality of contact portions 902d (902d-1 to 902d-9) of the weight portion 902a are formed in a triangular shape in which the end most protruding with respect to the fixed electrode 903 is linear or dotted. Also good. Note that the plurality of contact portions 902d (902d-1 to 902d-9) are not limited to this shape as long as the contact portions 902d (902d-1 to 902d-9) are formed in a shape that makes line contact or point contact instead of surface contact when contacting the fixed electrode 903. For example, the contact portion 902d may be a linear convex portion, or may be a convex portion (wedge type) sharp with respect to the fixed electrode 903. By forming in such a shape, the contact area when contacting with the fixed electrode 903 can be reduced. Therefore, after applying an external force, the contact portion 902d is separated from the fixed electrode 903 by electrostatic attraction or the like. Sticking such as disappearance can be prevented. Moreover, since the number of contacts can be increased by forming a plurality of contact portions 902d, the reliability of the mechanical quantity sensor can be improved.

  A plurality of vertical portions 902c (902c-1 to 902c-8) of the weight portion 902a are spaced apart from the gap α in a direction perpendicular to the horizontal portion 902b between the plurality of horizontal portions 902b spaced apart by the gap α. It extends by the same length α and is arranged so as to connect the horizontal portions 902b. The plurality of vertical portions 902c having such a shape serve to prevent the plurality of horizontal portions 902b from being displaced and contacting each other by application of respective weights or external forces. FIG. 25B illustrates a shape in which nine horizontal portions 902b and nine contact portions 902d are arranged, and eight vertical portions 902c are arranged between the nine horizontal portions 902c. However, the number and shape of the horizontal portion 902b, the vertical portion 902c, and the contact portion 902d may be appropriately changed according to the specification.

  Further, as illustrated in FIG. 25C, the connecting portion 902e between the movable electrode 902 and the fixed portion 901 is a portion that is most loaded by the displacement of the movable electrode 902 when an external force is applied. The width of the connecting portion 902e may be formed larger than the width w of the movable electrode 902, or may have a shape reinforced to prevent breakage.

  Next, the structure and deflection amount of the movable electrode 902 according to the second embodiment will be described below with reference to FIGS.

  FIG. 26 is a schematic diagram for explaining the configuration of the movable electrode 902 according to the second embodiment. The weight portion 902a illustrated in FIG. 26 includes a plurality of horizontal portions 902b (902b-1 to 902b-6) and a plurality of vertical portions 902c (902c-1 to 902c−), similarly to the weight portion 902a illustrated in FIG. 5) and a plurality of contact portions 902d (902d-1 to 902d-6). Here, the weight portion 902a shown in FIG. 26 schematically shows a shape in which six horizontal portions 902b and six contact portions 902d are arranged, and five vertical portions 902c are arranged between the six horizontal portions 902c. However, it is not limited to this shape. It is assumed that n (n> 1) horizontal portions 902b are arranged. Further, as illustrated, the gap between the plurality of contact portions 902d (902d-1 to 902d-6) and the fixed electrode 903 is constant as a gap G (μm), and the plurality of horizontal portions 902b (902b-1 to 902b). −6) is constant as the gap α (μm), and the width x (μm) in the X-axis direction and the length y (Y-axis direction) of the horizontal portions 902b (902b-1 to 902b-6). μm) is assumed to be constant.

  27 shows the length l in the X-axis direction of the movable electrode 902 shown in FIG. 26, the gap G between the contact portion 902d of the movable electrode 902 and the fixed electrode 903, and the horizontal portion 902b of the movable electrode 902 in the Y-axis direction. It is a table | surface which shows the relationship with the deflection amount (DELTA) at the time of changing length n and the number n of the horizontal part 902b, respectively. 27A shows a measured value of the deflection Δ when the length l of the movable electrode 902 is changed, and FIG. 27B shows a change in the gap G between the contact portion 902d and the fixed electrode 903. (C) shows the measured value of the deflection amount Δ when the length y of the horizontal portion 902b and the number n of the horizontal portions 902b are respectively changed.

The deflection amount Δ (μm) is the same as in the first embodiment. The length of the movable electrode 902 is 1 (μm), the width is w (μm), the thickness is t (μm), and the mass of the weight portion 902a is m. (G) When the Young's modulus of the movable electrode 902 is E (GPa) and the applied gravitational acceleration is g (m / s ² ), it can be obtained by the above-described Expression 1. Further, the mass m (g) of the weight portion 902a is composed of the plurality of horizontal portions 902b, the plurality of vertical portions 902c, and the plurality of contact portions 902d. Similarly to 1, the mass m (g) may be obtained based on the above-described Equation 3. Therefore, the deflection amount Δ may be a numerical value obtained based on the above-described Equations 1 and 3.

  Referring to FIG. 27, in any of the cases (a) to (c), the deflection amount Δ is larger than the gap G between the contact portion 902d of the movable electrode 902 and the fixed electrode 903. It can be seen that if the movable electrode 902 is configured based on the dimensions of each part shown in FIG.

  As shown in FIG. 27A, when the length l of the movable electrode 902 is changed to 2000 μm, 1800 μm, 1600 μm, 1525 μm, 1370 μm, and 1220 μm, the measurement of Example 1 shown in FIG. Compared with the result, the length y of the weight portion 902a is 1000 μm, which is shorter than the length y of the weight portion 802b according to the first embodiment, but the width w of the movable electrode 902 is 3 μm and the length l is 1600 μm. In this case, it can be seen that a deflection amount Δ of about 1.94 μm can be generated. Since the weight portion 902a includes nine horizontal portions 902b and the length y of the weight portion 902a is 1000 μm, the total length Y of the weight portion 902a is the sum of the lengths of the nine horizontal portions 902y. It turns out that it is 9000 micrometers. Therefore, the movable electrode 902 has a configuration in which the weight portion 902a includes a plurality of horizontal portions 902b, thereby increasing the mass m of the weight portion 902a without increasing the length y of the weight portion 902a in the Y-axis direction. Therefore, even when the length l of the movable electrode 902 and the length y of the weight portion 902a are shorter than those of the movable electrode 802 according to the first embodiment, a mechanical quantity sensor can be realized. It can be seen that the amount of deflection Δ can be generated. It can also be seen that when the width w of the movable electrode 902 is smaller than 2 μm and 3 μm and the length l is shorter than 1220 μm, a deflection amount Δ of about 1.94 μm is generated. As described above, according to the movable electrode 902 according to the second embodiment, even when the length 1 in the X-axis direction and the length y in the Y-axis direction are shorter than the movable electrode 802 according to the first embodiment, It can be seen that a mechanical quantity sensor that can secure the function as the movable electrode 902 and can reduce the chip size can be realized.

  Next, as shown in FIG. 27B, when the dimensions of the movable electrode 902 and the weight portion 902a are the same, the gap G between the contact portion 902d and the fixed electrode 903 is 1.8 μm, It was confirmed that it is possible to generate a deflection amount Δ that can secure the function as the movable electrode 902 even when the thickness is changed to .3 μm and 0.8 μm.

  Next, as shown in FIG. 27C, the length l of the movable electrode 902 is set to 1000 μm and the total length Y of the weight portion 902a is kept constant at 15000 μm while the weight portion 902a (horizontal portion 902b) is kept constant. It was confirmed that when the length y and the number n of the horizontal portions 902b were changed, the deflection amount Δ did not change to 1.78 μm in either case. Therefore, even when the length l of the movable electrode 902 is 1000 μm and the length y of the weight portion 902a is 500 μm, the number of the horizontal portions 902b is arranged to be about 30 so that the chip size can be reduced. It can be seen that a quantity sensor can be realized.

  As described above, the movable electrode 902 according to the second embodiment reduces the length of the movable electrode 902 in the X-axis direction and the Y-axis direction by configuring the weight portion 902a into a shape including a plurality of horizontal portions 902b. Thus, it is possible to add a desired weight. As a result, it is possible to improve the detection sensitivity of the magnitude of the external force and the application direction without increasing the chip size of the mechanical quantity sensor. Further, by forming the plurality of contact portions 902d of the weight portion 902a in the shape of point contact or line contact with the fixed electrode 903, it is possible to prevent the sticking phenomenon that the contact portion 902d does not leave the contact with the fixed electrode 903. it can.

  Next, a schematic structure and a manufacturing method of the mechanical quantity sensor 900 in which a plurality of movable electrodes 902 (902-1 to 902-12) according to the second embodiment are arranged will be described below with reference to FIGS. .

  FIG. 28 is a plan view showing a schematic structure of the semiconductor substrate of the mechanical quantity sensor 900 according to the second embodiment of the present invention. FIG. 29 is a plan view illustrating a schematic structure of the first glass substrate of the mechanical quantity sensor 900 according to the second embodiment of the present invention. FIG. 30 is a plan view showing a schematic structure of the second glass substrate of the mechanical quantity sensor 900 according to the second embodiment of the present invention.

  As illustrated in FIG. 28, the mechanical quantity sensor 900 according to the second embodiment of the present invention includes a fixed portion 901 (901-1 to 9-1-4) and a movable electrode 902 ( 902-1 to 902-12) and a fixed electrode 903 (903-1 to 903-12). Weight portions 902a (902a-1 to 902a-12) that come into contact with the fixed electrodes 903 (903-1 to 903-12) by application of external force are provided at the ends of the movable electrodes 902 (902-1 to 902-12). The fixed electrodes 903 (903-1 to 903-12) are arranged to face each other. As shown in the drawing, twelve movable electrodes 902 (902-1 to 902-12) are arranged, and the magnitude of the external force in the positive and negative directions of the X axis, and in the positive and negative directions of the Y axis. Three movable electrodes 902 each having a different length may be arranged for each of the four detection directions so as to detect the height. Three movable electrodes 902 having the same detection direction are connected to the same fixed portion 901, respectively. For example, one end of each of the three movable electrodes 902-1 to 902-3 that detects the magnitude of the external force in the positive direction of the X axis is coupled to the fixed portion 901-1.

  Among the movable electrodes 902 (902-1 to 902-12), the movable electrodes 902-1 to 902-3 extend away from the fixed portion 901-1 in the positive direction of the Y axis, respectively, and the length relationship is The movable electrode 902-1 is the longest and the movable electrode 902-3 is the shortest. Further, the weight portions 902a-1 to 902a-3 of the movable electrodes 902-1 to 902-3 respectively extend in the positive direction of the X axis, and when an external force in the positive direction of the X axis is applied, each of the weight portions 902a-1 to 902a-3 It arrange | positions so that the fixed electrodes 903-1 to 903-3 which oppose may be contacted according to the magnitude | size of. As described above, the movable electrodes 902-1 to 902-3 are arranged so as to detect the external force in the positive direction of the X axis, and have different lengths. Therefore, the external force in the same direction has different magnitudes. Can be detected.

  In addition, the movable electrodes 902-4 to 902-6 extend away from the fixed portion 901-2 in the positive direction of the X axis, respectively, and the relationship of the lengths is the movable electrodes 902-4 to 902-6. The movable electrode 902-4 is the longest and the movable electrode 902-6 is the shortest. Further, the weight portions 902a-4 to 902a-6 of the movable electrodes 902-4 to 902-6 respectively extend in the negative direction of the Y axis, and when an external force in the negative direction of the Y axis is applied, each of the weight portions 902a-4 to 902a-6 It arrange | positions so that the fixed electrodes 903-4 to 903-6 which oppose may be contacted according to the magnitude | size of. In addition, the movable electrodes 902-7 to 902-9 extend separately from the fixed portion 901-3 in the negative direction of the Y-axis, and the relationship of the lengths is as follows among the movable electrodes 902-7 to 902-9: The movable electrode 902-7 is the longest and the movable electrode 902-9 is the shortest. Further, the weight portions 902a-7 to 902a-9 of the movable electrodes 902-7 to 902-9 respectively extend in the negative direction of the X axis, and when an external force in the negative direction of the X axis is applied, each of the weight portions 902a-7 to 902a-9 It arrange | positions so that the fixed electrodes 903-7 to 903-9 which oppose may be contacted according to the magnitude | size of. In addition, the movable electrodes 902-10 to 902-12 extend away from the fixed portion 901-4 in the negative direction of the X axis, respectively, and the relationship of the length is the movable electrodes 902-10 to 902-12. The movable electrode 902-10 is the longest and the movable electrode 902-12 is the shortest. Further, the weight portions 902a-10 to 902a-12 of the movable electrodes 902-10 to 902-12 respectively extend in the positive direction of the Y axis, and when an external force in the positive direction of the Y axis is applied, each of the weight portions 902a-10 to 902a-12 It arrange | positions so that the fixed electrodes 903-10 to 903-12 which oppose may be contacted according to the magnitude | size of.

  Note that the movable electrodes 902 (902-1 to 902-12) are in contact with a part of the semiconductor substrate 904 arranged in a direction opposite to the direction of the external force detected by each or other adjacent movable electrodes 902. Arranged not to. For example, the movable electrodes 902-1, 902-4, 902-7, and 902-10 are spaced apart from a part of the semiconductor substrate 904 by about 6 μm, and the movable electrodes 902-2, 902-3, 902-5, 902-6, 902-8, 902-9, 902-11, and 902-12 are arranged apart from other adjacent movable electrodes 902 by about 6 μm. Thus, even when the movable electrode 902 (902-1 to 902-12) bends in a direction other than the direction of the external force to be detected in response to the application of the external force, a part of the adjacent semiconductor substrate 904 or other movable The movable electrodes 902 (902-1 to 902-12) are formed so as not to contact the electrode 902.

  As described above, the movable electrode 902 (902-1 to 902-12) detects three different external force magnitudes in each direction by arranging the three movable electrodes 902 for each of the four detection directions. be able to. Therefore, according to the movable electrode 902 (902-1 to 902-12) according to the second embodiment, it is possible to detect the magnitude and direction of the external force with 12 different patterns. Thus, the magnitude of the external force to be detected can be increased by increasing the number of movable electrodes 902 having different lengths arranged for each detection direction, and by increasing the external force detection direction by changing the arrangement position of the movable electrode 902. The types of height and direction can be increased.

  As shown in FIG. 28, the fixing portions 901 (901-1 to 9-1-4) are arranged at the four corners of the semiconductor substrate 904, and the movable electrodes 902 (902-1 to 902-12) are The fixed portions 901 (901-1 to 9-1-4) are arranged so as to extend along the four sides of the semiconductor substrate 904, and the fixed electrodes 903 (903-1 to 903-12) are movable electrodes 902 (902-902). 1 to 902-12) may be arranged on the inner side of the arrangement position and opposed to the weight portions 902a-7 to 902a-9. In this way, by arranging the fixed portion 901 (901-1 to 9-1-4), the movable electrode 902 (902-1 to 902-12), and the fixed electrode 903 (903-1 to 903-12), Since the area of the semiconductor substrate 904 can be used effectively, the chip size of the mechanical quantity sensor 900 can be reduced.

  Next, a schematic structure of the first and second glass substrates 905 and 906 of the mechanical quantity sensor 900 according to the second embodiment of the present invention will be described with reference to FIGS. FIG. 29 shows a first glass substrate 905 bonded in the positive direction of the Z-axis of the semiconductor substrate 904 shown in FIG. FIG. 30 shows the second glass substrate 906 bonded in the negative direction of the Z-axis of the semiconductor substrate 904 shown in FIG.

  29, on the first glass substrate 905, the fixed portion 901 (901-1 to 9-1-4), the movable electrode 902 (902-1 to 902-12) illustrated in FIG. The first wiring terminals 901a (901a-1 to 901a-4) and the first wiring patterns 901b (901b-1 to 901b-4) correspond to the positions where the fixed electrodes 903 (903-1 to 903-12) are formed. ), Second wiring terminals 903a (903a-1 to 903a-12), and second wiring patterns 903b (903b-1 to 903b-12) are formed. The first wiring terminals 901a (901a-1 to 901a-4) are on the semiconductor substrate 904 arranged in the negative direction of the Z-axis through a through hole formed in the first glass substrate 905 by a manufacturing process described later. It is connected to each of the fixing portions 901 (901-1 to 901-4). The second wiring terminals 903a (903a-1 to 903a-12) are on the semiconductor substrate 904 disposed in the negative direction of the Z axis through a through hole formed in the first glass substrate 905 by a manufacturing process described later. Each is connected to a fixed electrode 903 (903-1 to 903-12). The first wiring pattern 901b (901b-1 to 901b-4) and the second wiring pattern 903b (903b-1 to 903b-12) are respectively the first wiring terminal 901a (901a-1 to 901a-4) and the first wiring pattern 901b (901b-1 to 901b-4). Two wiring terminals 903a (903a-1 to 903a-12) are connected. The first wiring terminals 901a (901a-1 to 901a-4) and the first wiring patterns 901b (901b-1 to 901b-4) are configured to electrically connect the fixing unit 901 and an external circuit. The second wiring terminals 903a (903a-1 to 903a-12) and the second wiring patterns 903b (903b-1 to 903b-12) are for electrically connecting the fixed electrode 903 and an external circuit. It is a configuration.

  In addition, as illustrated in FIG. 30, recesses 906 a-1 to 906 a-4 are formed on the second glass substrate 906. The recesses 906a-1 to 906a-4 are formed on the second glass substrate 906 in accordance with the formation positions of the movable electrodes 902 (902-1 to 902-12) of the semiconductor substrate 904 arranged in the positive direction of the Z axis. It is formed. The recesses 906a-1 to 906a-4 are arranged so that the movable electrode 902 (902-1 to 902-12) does not come into contact with the second glass substrate 906 even if the movable electrode 902 (902-1 to 902-12) bends in the negative direction of the Z axis. In consideration of the width of 902-1 to 902-12) and the amount of deflection, it is formed by a manufacturing process described later.

  Hereinafter, with reference to FIG.31 and FIG.32, the manufacturing method of the mechanical quantity sensor 900 which concerns on Example 2 of this invention is demonstrated. FIGS. 31 and 32 are diagrams illustrating an example of a manufacturing method of the mechanical quantity sensor 900 according to the second embodiment, and do not directly correspond to the configuration of the mechanical quantity sensor 900 illustrated in FIGS. 28 to 30. .

  FIG. 31 is a diagram for explaining a manufacturing process of the mechanical quantity sensor 900 according to the second embodiment of the present invention. FIG. 31A shows a process of anodically bonding the semiconductor substrate before processing and the first glass substrate. (B) is a cross-sectional view showing a step of polishing a semiconductor substrate, (c) is a cross-sectional view showing a step of forming a recess in the semiconductor substrate, and (d) is a cross-sectional view of the semiconductor substrate. It is sectional drawing which shows the process of forming a fixed part, a movable electrode, and a fixed electrode in a board | substrate, (e) is sectional drawing which shows a 2nd glass substrate, (f) is a recessed part in a 2nd glass substrate. It is sectional drawing which shows the process to form. FIG. 32 is a view for explaining a manufacturing process of the mechanical quantity sensor 900 according to the second embodiment of the present invention, and FIG. 32 (g) shows the first glass substrate and the semiconductor substrate shown in FIG. FIG. 32 is a cross-sectional view showing a step of anodic bonding with the second glass substrate shown in FIG. 31F, and FIG. 31H is a cross-sectional view obtained by inverting the configuration shown in FIG. ) Is a cross-sectional view showing a step of forming a recess in the first glass substrate shown in (h), and (j) is a cross-sectional view showing a step in the middle of forming a wiring terminal on the first glass substrate. (K) is sectional drawing which shows the process which formed the terminal for wiring in the 1st glass substrate.

  As illustrated in FIG. 31A, first, the semiconductor substrate 904 and the first glass substrate 905 are bonded by anodic bonding. At this time, the semiconductor substrate 904 may be a low resistance Si bare wafer substrate having a resistivity of 0.02 Ω · cm or less and a thickness in the positive direction of the Z axis of 625 μm. The first glass substrate may be, for example, Tempax glass having a thickness in the positive direction of the Z axis of 500 μm.

  Next, as illustrated in FIG. 31B, the upper surface of the semiconductor substrate 904 bonded to the first glass substrate 905 is polished to reduce the thickness of the semiconductor substrate 904 in the positive direction of the Z axis. The thickness of the semiconductor substrate 904 is the same as that of the movable electrode 902. For example, the thickness of the semiconductor substrate 904 may be 30 μm.

  Next, as illustrated in FIG. 31C, a mask (not shown) for processing the fixed portion 901, the movable electrode 902, and the fixed electrode 903 is formed, and the semiconductor substrate 904 is formed through the mask. By etching, a concave portion 904a is formed except for the positions where the fixed portion 901, the movable electrode 902, and the fixed electrode 903 are formed. As an etching method, DRIE (Deep Reactive Ion Etching) can be used. By etching the semiconductor substrate 904 in this way, the fixed portion 901 (901-1 to 9-1-4), the movable electrode 902 (902-1 to 902-12), and the fixed electrode 903 (shown in FIG. 903-1 to 903-12) can be formed.

  Next, as illustrated in FIG. 31D, the first glass substrate 905 is etched to form a recess 905a. The recess 905a is formed by etching the first glass substrate 905 to a depth of about 30 μm by wet etching using HF dilution (for example, diluting 50% HF to 10%) as an etching solution as an etching method. Also good. By forming the recess 905a, the first glass substrate 905 can be prevented from contacting even when the end of the movable electrode 902 is displaced in the Z-axis direction.

  Next, as shown in FIG. 31E, a second glass substrate 906 is prepared. The second glass substrate may be Tempax glass having a thickness of 500 μm. As illustrated in FIG. 31F, the second glass substrate 906 is etched to form a recess 906a. The depth of the recess 906a may be 30 μm, for example. The etching method may be wet etching using HF dilution (for example, diluting 50% HF to 10%) as an etching solution. As shown in FIG. 30, the recess 906a may be formed in accordance with the formation position of the movable electrode 902 formed on the semiconductor substrate 904 to be bonded in the manufacturing process described later. By forming the recess 906a, the second glass substrate 906 can be prevented from contacting even when the end of the movable electrode 902 is displaced in the Z-axis direction.

  Next, as illustrated in FIG. 32G, the surface of the semiconductor substrate 904 illustrated in FIG. 31D where the fixed portion 901, the movable electrode 902, and the fixed electrode 903 are formed, and FIG. The surface on which the concave portion 906 of the second glass substrate 906 is formed is joined by anodic bonding. At this time, bonding is performed so that the concave portion 906 a of the second glass substrate 906 faces the movable electrode 902 of the semiconductor substrate 904.

  Next, as illustrated in FIG. 32H, the configuration illustrated in FIG. 32G is reversed so that the first glass substrate 905 is the upper surface. Next, as shown in FIG. 32I, the first and second wiring terminals 901a and 903a connected to the fixing portion 901 and the fixing electrode 903 of the semiconductor substrate 904, respectively, are formed. A through hole 905b is formed by sandblasting on the first glass substrate 905 on which a predetermined mask is formed at the formation position of the two wiring terminals 901a and 903a.

  Next, as illustrated in FIG. 32 (j), sputtering, conductive paste filling (screen printing), CVD (Chemical Vapor Deposition) method or electrolytic plating method is performed on the inside of the through hole 905b and on the second glass substrate 905. A conductive material 907 having conductivity is formed using a method such as the above.

  Next, as shown in FIG. 32 (k), first and second wiring terminals 901a and 903a and masks (not shown) for processing the first and second wiring patterns 901b and 903b are formed. Then, the conductive material 907 is etched through the mask to form the first and second wiring terminals 901a and 903a and the first and second wiring patterns 901b and 903b. These first and second wiring terminals 901a and 903a, and the first and second wiring patterns 901b and 903b are connected to a circuit that processes a mechanical quantity detection signal in an electronic device in which the mechanical quantity sensor 900 is mounted. The

  As described above, since the mechanical quantity sensor 900 according to the second embodiment of the present invention can be manufactured by a simple manufacturing method, the manufacturing cost can be suppressed. Further, as described above, according to the mechanical quantity sensor 900 according to the second embodiment of the present invention, it is possible to reduce the chip size and detect the direction and magnitude of a desired external force. It should be noted that, of the plurality of movable electrodes 902 (902-1 to 902-12), which movable electrode is in contact with the fixed electrode 903 (903-1 to 903-12) is detected with or without continuity over time. Thus, not only the direction and magnitude of the external force but also the acceleration can be detected.

(Processing circuit)
Hereinafter, a configuration example of a processing circuit for processing a mechanical quantity detection signal detected by the mechanical quantity sensor and the combined mechanical quantity sensors 100 to 700 shown in the first to seventh embodiments of the present invention will be described with reference to FIG. To explain.

  FIG. 33 is a diagram showing a circuit configuration of a processing circuit 1010 that processes a signal detected by a mechanical quantity sensor according to an embodiment of the present invention. The processing circuit 1010 includes a switch circuit 1005 and a detection circuit 1004. In this processing circuit 1010, the configuration of the mechanical quantity sensor is shown as a switch circuit 1005. As described in the first to seventh embodiments, the mechanical quantity sensor performs an operation in which a plurality of movable electrodes come into contact with a plurality of fixed electrodes in accordance with an applied external force. It can be expressed as a switch circuit 1005 in which switches are connected in parallel. Each switch in the switch circuit 1005 shown in FIG. 33 includes fixed contacts 1001 and 1003 and a movable piece 1002. The fixed contact 1001 corresponds to the fixed portion shown in the first to seventh embodiments, the movable piece 1002 corresponds to the movable electrode shown in the first to seventh embodiments, and the fixed contact 1003 corresponds to the first to seventh embodiments. This corresponds to the fixed electrode shown in the seventh embodiment. That is, the state in which the external electrode is not applied and the movable electrode is not in contact with the fixed electrode corresponds to the open state (hereinafter referred to as the OFF state) of the movable piece 1002 of each switch, and the external electrode is applied and the movable electrode is fixed. The state in contact with the electrode corresponds to the closed state (hereinafter referred to as the ON state) of the movable piece 1002 of each switch.

The fixed contact 1001 of each switch is connected to the input stage of the mechanical quantity detection circuit 1004, and the fixed contact 1003 of each switch is grounded. Further, each line connecting the input stage of the fixed contacts 1001 and a physical quantity detection circuit 1004 is connected to the DC power supply V _CC or the AC power supply V _AC through the resistor r. In the case of the DC power supply V _CC, by electrostatic attraction, even when applied no external force, there is a possibility of generating sticking of the movable electrode and the fixed electrode remains in contact, the AC power source it may be used as the V _AC. Further, in the case of the DC power supply _VCC , as described in the second embodiment, the movable electrode is configured to be in line contact or point contact with the fixed electrode, and the sticking phenomenon is reduced by reducing the area of the contact surface. It may be prevented. With this circuit configuration, when the movable piece 1002 of each switch is in the OFF state, a “Hi” signal is input to the input stage of the mechanical quantity detection circuit 1004 as a detection signal. When the movable piece 1002 of each switch is in the ON state, a “Low” signal is input to the input stage of the mechanical quantity detection circuit 1004 as a detection signal.

  Similarly to the opening / closing operation of each switch in the switch circuit 1005, the detection circuit 1004 receives a “Hi” signal that is input according to the operation of each movable electrode that is in a non-contact state or a contact state depending on whether or not an external force is applied. And the state of "Low" is recognized, and the mechanical quantity detection signal which shows the magnitude | size and direction of the external force applied to the mechanical quantity sensor is output.

  Although not shown, a memory for storing the detection signal output to the detection circuit 1004 and the value of the external force in association with each other is prepared, and the magnitude of the external force corresponding to the detection signal is prepared from this memory. The indicated value may be output.

  According to the mechanical quantity sensor and the combined mechanical quantity sensors 100 to 700 according to the embodiment of the present invention, it is not necessary to use an amplification circuit or the like as illustrated in FIG. Therefore, the peripheral circuit can be simplified. Thereby, since a space is created when the mechanical quantity sensor and the combined mechanical quantity sensors 100 to 700 are mounted on the electronic device, the space can be effectively utilized. In addition, the manufacturing cost of the processing circuit 1010 can be reduced.

  The above-described mechanical quantity sensors and composite type mechanical quantity sensors 100 to 700 according to the embodiment of the present invention are mounted on a circuit board on which an active element such as an IC is mounted, for example, and are well-known methods such as wire bonding connection and the like. The mechanical quantity sensor and the electronic circuit can be provided as one electronic component by connecting the wiring terminal and an active element such as an electronic circuit board or IC depending on the material. This electronic component can be distributed in the market by being mounted on a mobile terminal such as a game machine or a mobile phone.

(Eighth embodiment)
<Structure of mechanical quantity sensor>
Next, the structure of the mechanical quantity sensor 1100 according to the eighth embodiment of the present invention will be described with reference to FIGS. 34 and 35 are plan views showing a schematic structure of a mechanical quantity sensor 1100 according to the eighth embodiment of the present invention. 36 and 37 are diagrams for explaining the operation of the mechanical quantity sensor 1100 according to the eighth embodiment of the present invention.

  As illustrated in FIG. 34, the mechanical quantity sensor 1100 includes a fixed portion 1101-1 and 1101-2 on a semiconductor substrate 1104, and a movable electrode 1102 extending from the fixed portion 1101-1 to the X-axis direction illustrated in FIG. −1, a movable electrode 1102-2 that extends in a direction different from the direction in which the movable electrode 1102-1 extends from the fixed portion 1101-2, and a predetermined distance d1 from each end of the movable electrodes 1102-1 and 1102-2, fixed electrodes 1103-1 and 1103-2 that are spaced apart by d2. The end portions of the movable electrodes 1102-1 and 1102-2 bend according to the applied external force, and the distances d1 and d2 between the movable electrodes 1102-1 and 1102-2 and the fixed electrodes 1103-1 and 1103-2. Changes. FIG. 34 shows a state in which no external force is applied to the mechanical quantity sensor 1100. The movable electrodes 1102-1 and 1102-2 have a movable electrode 1102-1 and an end portion of the fixed portion 1101-1. The angle θ1 formed is different from the angle θ2 formed by the movable electrode 1102-2 and the end of the fixed portion 1101-2.

  In the stationary state of the mechanical quantity sensor 1100 shown in FIG. 34, the distance between each end of the movable electrodes 1102-1 and 1102-2 and the fixed electrodes 1103-1 and 1102-2 is proportional to the distances d1 and d2. Capacitances c1 and c2 having the capacitance values are formed. In the mechanical quantity sensor 1100, the movable electrodes 1102-1 and 1102-2 and the fixed electrodes 1103-1 and 1103-2 are arranged at a distance that does not come into contact with each other when an external force is applied.

  Further, as illustrated in FIG. 35, on the glass substrate 1105 bonded to the semiconductor substrate 1104, the first terminals 1101a-1 and 1101a-2 are provided at positions corresponding to the fixing portions 1101-1 and 1101-2, respectively. The second terminals 1103a-1 and 1103a-2 are formed at positions corresponding to the formed fixed electrodes 1103-1 and 1103-2, respectively. The mechanical quantity sensor 1100 includes a semiconductor substrate 1104 and a glass substrate 1105 connected to fixed portions 1101-1 and 1101-2 and first terminals 1101a-1 and 1101a-2, respectively, and fixed electrodes 1103-1 and 1103. 2 and the second terminals 1103a-1 and 1103a-2 are joined to be connected to each other. These first terminals 1101 a-1, 1101 a-2 and second terminals 1103 a-1, 1103 a-2 are circuits (not shown) that process mechanical quantity detection signals in the electronic device on which the mechanical quantity sensor 1100 is mounted. ). The mechanical quantity sensor 1100 can be manufactured by the same manufacturing method as the mechanical quantity sensor 100 according to the first embodiment. Therefore, hereinafter, the detailed description of the configuration of the mechanical quantity sensor 1100 is omitted for the same configuration as the mechanical quantity sensor 100.

  Hereinafter, the operation of the mechanical quantity sensor 1100 will be described with reference to FIGS. 34 to 37. As illustrated, the movable electrodes 1102-1 and 1102-2 extend in different directions from the fixed portions 1101-1 and 1101-2, respectively, and the end portions of the movable electrodes 1102-1 and 1102-2 are applied. It is displaced in different directions depending on the direction of the external force. Here, a distance d1 between the end of the movable electrode 1102-1 and the fixed electrode 1103-1 facing the distance d2, and a distance d2 between the end of the movable electrode 1102-2 and the fixed electrode 1103-2 facing the end. Changes in accordance with the direction and magnitude of the external force applied to the mechanical quantity sensor 1100. Note that the distances d1 and d2 between the end portions of the movable electrodes 1102-1 and 1102-2 and the fixed electrodes 1103-1 and 1103-2 may be the same distance when there is no applied external force. Good. Further, the lengths l1 and l2 of the movable electrodes 1102-1 and 1102-2 may be the same length, and the dimensions such as the thickness may be the same. In the present embodiment, for convenience of explanation, the lengths 11 and 12 of the movable electrodes 1102-1 and 1102-2 are the same, and the movable electrode 1102-1 and the end of the fixed portion 1101-1 are formed. It is assumed that the angle θ1 = 90 °, that is, the movable electrode 1102-1 is arranged in parallel with the X axis. Note that the configuration of the mechanical quantity sensor 1100 according to the eighth embodiment of the present invention is not limited to these l1, l2, and θ1.

  As illustrated in FIG. 36, consider a case where an external force F1 is applied to the mechanical quantity sensor 1100 from, for example, positive to negative in the Y-axis direction (left to right in the drawing in the Y-axis direction). When the external force F1 is applied, the movable electrode 1102-1 and the movable electrode 1102-2 are each displaced in a direction perpendicular to the extending direction. Therefore, the external force F1 is applied to the movable electrode 1102-1 in the vertical direction, while the external force F1Sin θ2 is applied to the movable electrode 1102-2. At this time, as shown in FIG. 37, the end of the movable electrode 1102-1 is displaced more than the end of the movable electrode 1102-2, the distance d1 changes to a distance d1 ′, and the distance d2 changes to a distance d2 ′. To change. Thus, if the movable electrode 1102-1 and the movable electrode 1102-2 are arranged in different directions, as shown in FIG. 36, even when the same external force F1 is applied to the mechanical quantity sensor 1100, The amount of deflection differs between the movable electrode 1102-1 and the movable electrode 1102-2, and the distance d1 and the distance d2 change to different distances d1 ′ and d2 ′, respectively.

  As shown in FIG. 37, an external force F1 is applied to the mechanical quantity sensor 1100, and the distances between the ends of the movable electrodes 1102-1 and 1102-2 and the fixed electrodes 1103-1 and 1103-2 are distances d1. When it changes to ', d2', the capacitance (capacitance) c1 changes between the end of the movable electrode 1102-1 and the fixed electrode 1103-1 that faces the end, and faces the end of the movable electrode 1102-2. The capacitance c2 changes between the fixed electrode 1103-2. The magnitudes of the capacitance c1 and the capacitance c2 vary according to changes in the distance d1 and the distance d2, respectively. That is, the capacitance value of the capacitance c1 changes in proportion to the change in the distance d1, and the capacitance value of the capacitance c2 changes in proportion to the change in the distance d2. Changes in the capacitance values of the capacitance c1 and the capacitance c2 at this time are detected by an external circuit or the like (not shown) connected to the first terminals 1101a-1, 1101a-2 and the second terminals 1103a-1, 1103a-2. Therefore, the output difference between the detected capacitances c1 and c2 is signal-processed and calculated by a predetermined arithmetic processing unit or the like (not shown) to thereby determine the direction and magnitude of the applied external force. It becomes possible to judge.

  In addition, the mechanical quantity sensor 1100 can simplify the configuration of an external circuit that detects an output, as compared with a conventional capacitive sensor. In conventional capacitive sensors, the movable electrode is displaced according to the external force applied from various directions, and even when an external force that is not a detection target is applied, a minute change in physical quantity occurs. It is necessary to correct the output using a circuit or the like. On the other hand, in the mechanical quantity sensor 1100 according to the eighth embodiment of the present invention, the movable electrodes 1102-1 and 1102-2 are displaced only when one axial external force to be detected is applied. Can be configured. For example, when an external force in the axial direction other than the detection target is applied to the length, thickness, material, arrangement direction, and the like of the movable electrodes 1102-1 and 1102-2, the displacement of the movable electrodes 1102-1 and 1102-2 It is possible to design so as not to occur, and it can be configured to detect only an external force in the axial direction as a detection target. In addition, the mechanical quantity sensor 1100 exceeds a predetermined threshold value with respect to the capacitance values of the capacitances c1 and c2 generated between the end portions of the movable electrodes 1102-1 and 1102-2 and the fixed electrodes 1103-1 and 1103-2. Even in such a case, the detection accuracy can be increased by reducing the false detection by configuring the detection by the external circuit. Therefore, the mechanical quantity sensor 1100 can be formed so as not to consider the influence of an external force other than the detection target by being configured to detect an external force in a uniaxial direction. Compared to the type sensor, a correction circuit or the like is not required, and the configuration of the external circuit can be simplified.

  Note that the mechanical quantity sensor 1100 illustrated in FIGS. 34 to 37 is an example showing a configuration capable of detecting such capacitances c1 and c2. The mechanical quantity sensor 1100 is not limited to the illustrated shape, and the distances d1 and d2 between the end portions of the movable electrodes 1102-1 and 1102-2 and the fixed electrodes 1103-1 and 1103-2 are respectively applied external forces. It may be a different distance if there is no. Further, the movable electrodes 1102-1 and 1102-2 may have different dimensions such as length and thickness. At this time, if the movable electrode 1102-1 and the movable electrode 1102-2 are arranged in different directions, even when the same external force F1 is applied to the mechanical quantity sensor 1100 as shown in FIG. The amount of deflection differs between the electrode 1102-1 and the movable electrode 1102-2, and the distance d1 and the distance d2 change to different distances d1 ′ and d2 ′, respectively. The direction and magnitude of the applied external force can be determined by calculating the difference between the capacitances c1 and c2 by performing the signal processing as described above.

  Therefore, the mechanical quantity sensor 1100 according to the eighth embodiment is configured such that the amount of deflection differs according to the external force applied to the plurality of movable electrodes 1102-1 and 1102-2 arranged in different directions. In addition, it is possible to detect a change in capacitance value generated between the plurality of movable electrodes 1102-1 and 1102-2 and the fixed electrodes 1103-1 and 1103-2 as an output difference between the capacitances c1 and c2. If comprised, it will not be limited to the shape shown in figure. The movable electrodes 1102-1 and 1102-2, the fixed portions 1101-1 and 1101-2, and the fixed electrodes 1103-1 and 1103-2 are arranged on the semiconductor substrate 1104 two by two as illustrated. However, if the configuration is such that the change in the capacitance value generated between the plurality of movable electrodes and the corresponding fixed electrode can be compared according to the applied external force, two or more of the plurality of movable electrodes can be compared. The structure by which an electrode is arrange | positioned may be sufficient.

  34 shows a configuration in which the movable electrode 1102-1 is arranged extending in the X-axis direction, but the movable electrode 1102-1 is arranged extending in the Y-axis direction. Thus, the magnitude of the external force in the X-axis direction may be detected. Furthermore, when detecting the magnitude of the external force in the Z-axis direction, fixed electrodes 1103-1 and 1103-2 are arranged on the glass substrate 1105 in the same manner as the mechanical quantity sensor 300 according to the third embodiment. The capacitances c1 and c2 between the movable electrodes 1102-1 and 1102-2 on the semiconductor substrate 1104 and the fixed electrodes 1103-1 and 1103-2 may be detected. Further, on the same substrate, a mechanical quantity sensor 1100 that detects the direction and magnitude of the external force in the X-axis direction, a mechanical quantity sensor 1100 that detects the direction and magnitude of the external force in the Y-axis direction, and the direction of the external force in the Z-axis direction. In addition, a mechanical quantity sensor 1100 for detecting the size may be arranged to constitute a combined mechanical quantity sensor. The direction of the detected external force is not limited to the three axis directions of the X, Y, and Z axes, and by adjusting the arrangement direction, length, thickness, and the like of the movable electrodes 1102-1 and 1102-2, respectively. It can form so that the direction and magnitude | size of several external force can be detected. Therefore, according to the mechanical quantity sensor 1100, variations in the direction and magnitude of the external force to be detected can be increased.

  As described above, according to the mechanical quantity sensor 1100 according to the eighth embodiment of the present invention, not only the X-axis direction, the Y-axis direction, and the Z-axis direction but also various external force directions and magnitudes are detected. Can do. In addition, the mechanical quantity sensor 1100 can be manufactured by a simple manufacturing method similar to that of the mechanical quantity sensor 100 described above, and the external circuit has a simple configuration as compared with a conventional capacitance type sensor. Therefore, the manufacturing cost can be suppressed.

  Note that the mechanical quantity sensor 1100 according to the eighth embodiment includes, for example, an active element such as an IC, similarly to the mechanical quantity sensors and the composite type mechanical quantity sensors 100 to 700 according to the first to seventh embodiments. By connecting a wiring terminal and an active element such as an electronic circuit board or an IC by a well-known method and material such as wire bonding connection, the mechanical quantity sensor and the electronic circuit are combined into a single circuit board. It can be provided as an electronic component. This electronic component can be distributed in the market by being mounted on a mobile terminal such as a game machine or a mobile phone. This electronic component can be distributed in the market by being mounted on a mobile terminal such as a game machine or a mobile phone. The ninth embodiment will be described below.

(Ninth embodiment)
In the ninth embodiment, an electronic circuit board on which any one of the mechanical quantity sensors and the combined mechanical quantity sensors 100 to 1100 shown in the first to eighth embodiments is mounted as a mechanical quantity sensor 1200. 1210 and an example of an electronic apparatus 1300 on which the electronic circuit board 1210 is mounted will be described.

  FIG. 38 is a perspective view showing a configuration example of the electronic circuit board 1210 on which the mechanical quantity sensor 1200 is mounted. 38, on a circuit board 1201, a mechanical quantity sensor 1200 corresponding to any one of the acceleration sensor and the combined mechanical quantity sensors 100 to 1100 shown in the first to eighth embodiments, and an IC chip 1202 and the electronic circuit board 1210. FIG. 39 shows a configuration example of a portable information terminal 1300 as an electronic device on which the electronic circuit board 1210 is mounted.

  FIG. 39 is a perspective view illustrating a configuration example of the portable information terminal 1300. In FIG. 39, the portable information terminal 1300 includes a display unit 1301 and a keyboard unit 1302. The electronic circuit board 1210 is mounted inside the keyboard unit 1302. The portable information terminal 1300 has a function of storing various programs therein and executing communication processing, information processing, and the like using the various programs. In this portable information terminal 1300, by using the acceleration detected by the mechanical quantity sensor 1200 of the electronic circuit board 1210 in the application program, for example, a function of detecting the acceleration at the time of dropping and turning off the power is added. It becomes possible to do.

  By mounting the electronic circuit board 1210 on the portable information terminal 1300 as described above, a new function can be realized, and convenience and reliability of the portable information terminal 1300 can be improved. Note that the electronic device on which the electronic circuit board 1210 is mounted is not limited to the portable information terminal 1300 described above, and can be applied to, for example, a display, a projector, a scanner, and the like.

Mechanical quantity sensor ... 100, fixed part ... 101R1-R3, 101L1-L3, movable electrode ... 102 (R1-R3, L1-L3), fixed electrode ... 103, semiconductor substrate ... 104

Claims (5)

A substrate,
A fixing portion disposed on the substrate;
A plurality of movable electrodes each having one end supported by the fixed portion and spaced apart from the substrate and spaced apart from each other by a predetermined gap;
A plurality of fixed electrodes arranged to face the lower surface of the other end of the plurality of movable electrodes;
A fixed part electrode electrically connected to the fixed part;
A wiring terminal electrically connected to each of the plurality of fixed electrodes and the fixed portion electrode, and
Among the plurality of movable electrodes, a part of the other end portion is disposed in contact with the plurality of fixed electrodes,
The other end portions of the plurality of movable electrodes are displaced by an applied external force, contact with the plurality of fixed electrodes, or away from the plurality of fixed electrodes,
A mechanical quantity sensor that detects the magnitude and application direction of the external force by detecting which of the plurality of movable electrodes is in contact with the fixed electrode. The mechanical quantity sensor according to claim 1 , wherein the plurality of movable electrodes have a shape in line contact or point contact with the fixed electrode. The mechanical quantity sensor according to 請 Motomeko 1, depending on the direction of detecting the external force, the composite dynamic quantity sensor, characterized in that a plurality disposed on the substrate. The mechanical quantity sensor according to claim 1 or 2 ,
A circuit board on which the mechanical quantity sensor is mounted;
An electronic circuit board, comprising: an IC chip disposed on the circuit board and electrically connected to the mechanical quantity sensor. An electronic circuit board according to claim 4 ,
A housing for housing the electronic circuit board;
An electronic apparatus comprising at least an input unit and an output unit electrically connected to the electronic circuit board.