JPS62232171A - Semiconductor acceleration sensor - Google Patents

Semiconductor acceleration sensor

Info

Publication number
JPS62232171A
JPS62232171A JP61074164A JP7416486A JPS62232171A JP S62232171 A JPS62232171 A JP S62232171A JP 61074164 A JP61074164 A JP 61074164A JP 7416486 A JP7416486 A JP 7416486A JP S62232171 A JPS62232171 A JP S62232171A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
cantilever
vicinity
plane
supporting part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61074164A
Inventor
Hidetomo Nojiri
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP61074164A priority Critical patent/JPS62232171A/en
Publication of JPS62232171A publication Critical patent/JPS62232171A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To set the width of a cantilever in the vicinity of a supporting part, which gives large effects on the characteristics of a semiconductor accleration sensor in correspondence with a mask shape in etching, by making the width of the cantilever in the vicinity of the supporting part, which is formed in a semiconductor substrate, smaller than the thickness of the semiconductor substrate.
CONSTITUTION: A groove 3, which penetrates a semiconductor substrate from its upper surface to lower surface, is provided in the Si semiconductor substrate 1. with this groove 3, a cantilever 2, which is separated from the outer semiconductor substrate, is formed at a part other than the vicinity of a supporting part. The width W1 of the cantilever 2 in the vicinity of the supporting part, i.e., the size of the cantilever in the horizontal direction with respect to the plane of the Si semiconductor substrate 1, is set so that W1 is smaller than the size w2 of the Si semiconductor substrate 1 in the thickness direction. Therefore, the cantilever 2 is not displaced by acceleration in the direction orthogonal to the plane of the Si semiconductor substrate 1, but displaced by accleration in the direction horizontal to the plane. By providing a means for detecting the displacement, the acceleration in the direction horizontal to the plane of the Si semiconductor substrate can be detected.
COPYRIGHT: (C)1987,JPO&Japio
JP61074164A 1986-04-02 1986-04-02 Semiconductor acceleration sensor Pending JPS62232171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61074164A JPS62232171A (en) 1986-04-02 1986-04-02 Semiconductor acceleration sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61074164A JPS62232171A (en) 1986-04-02 1986-04-02 Semiconductor acceleration sensor

Publications (1)

Publication Number Publication Date
JPS62232171A true JPS62232171A (en) 1987-10-12

Family

ID=13539238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61074164A Pending JPS62232171A (en) 1986-04-02 1986-04-02 Semiconductor acceleration sensor

Country Status (1)

Country Link
JP (1) JPS62232171A (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239466A (en) * 1988-03-18 1989-09-25 Fujikura Ltd Manufacture of semiconductor acceleration sensor
JPH01304361A (en) * 1988-05-31 1989-12-07 Oki Electric Ind Co Ltd Semiconductor acceleration sensor
JPH01320470A (en) * 1988-06-21 1989-12-26 Fujikura Ltd Semiconductor acceleration sensor
JPH02309259A (en) * 1989-05-24 1990-12-25 Nissan Motor Co Ltd Semiconductor acceleration sensor
US5072288A (en) * 1989-02-21 1991-12-10 Cornell Research Foundation, Inc. Microdynamic release structure
US5149673A (en) * 1989-02-21 1992-09-22 Cornell Research Foundation, Inc. Selective chemical vapor deposition of tungsten for microdynamic structures
JPH04315056A (en) * 1991-04-12 1992-11-06 Tokai Rika Co Ltd Acceleration sensor
JPH04315477A (en) * 1991-04-15 1992-11-06 Nissan Motor Co Ltd Three-dimensional acceleration sensor
JPH04324371A (en) * 1991-04-25 1992-11-13 Tokai Rika Co Ltd Acceleration sensor
US5399415A (en) * 1993-02-05 1995-03-21 Cornell Research Foundation, Inc. Isolated tungsten microelectromechanical structures
US5426070A (en) * 1993-05-26 1995-06-20 Cornell Research Foundation, Inc. Microstructures and high temperature isolation process for fabrication thereof
US5610335A (en) * 1993-05-26 1997-03-11 Cornell Research Foundation Microelectromechanical lateral accelerometer
US5640133A (en) * 1995-06-23 1997-06-17 Cornell Research Foundation, Inc. Capacitance based tunable micromechanical resonators
US5914553A (en) * 1997-06-16 1999-06-22 Cornell Research Foundation, Inc. Multistable tunable micromechanical resonators
US6422078B2 (en) 1992-08-21 2002-07-23 Denso Corporation Semiconductor mechanical sensor
US6877383B2 (en) 1998-03-31 2005-04-12 Hitachi, Ltd. Capacitive type pressure sensor
JP2007511945A (en) * 2003-11-14 2007-05-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Semiconductor device comprising a resonator
USRE40347E1 (en) 1992-04-27 2008-06-03 Denso Corporation Acceleration sensor and process for the production thereof
JP2009294225A (en) * 2009-09-17 2009-12-17 Denso Corp Semiconductor dynamic quantity sensor
USRE42359E1 (en) 1992-10-13 2011-05-17 Denso Corporation Dynamical quantity sensor
JP2011237403A (en) * 2010-04-15 2011-11-24 Dainippon Printing Co Ltd Dynamical quantity sensor and method for manufacturing dynamical quantity sensor

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239466A (en) * 1988-03-18 1989-09-25 Fujikura Ltd Manufacture of semiconductor acceleration sensor
JPH01304361A (en) * 1988-05-31 1989-12-07 Oki Electric Ind Co Ltd Semiconductor acceleration sensor
JPH01320470A (en) * 1988-06-21 1989-12-26 Fujikura Ltd Semiconductor acceleration sensor
US5072288A (en) * 1989-02-21 1991-12-10 Cornell Research Foundation, Inc. Microdynamic release structure
US5149673A (en) * 1989-02-21 1992-09-22 Cornell Research Foundation, Inc. Selective chemical vapor deposition of tungsten for microdynamic structures
JPH0830718B2 (en) * 1989-05-24 1996-03-27 日産自動車株式会社 Semiconductor acceleration sensor
JPH02309259A (en) * 1989-05-24 1990-12-25 Nissan Motor Co Ltd Semiconductor acceleration sensor
JPH04315056A (en) * 1991-04-12 1992-11-06 Tokai Rika Co Ltd Acceleration sensor
JPH04315477A (en) * 1991-04-15 1992-11-06 Nissan Motor Co Ltd Three-dimensional acceleration sensor
JPH04324371A (en) * 1991-04-25 1992-11-13 Tokai Rika Co Ltd Acceleration sensor
USRE42083E1 (en) 1992-04-27 2011-02-01 Denso Corporation Acceleration sensor and process for the production thereof
USRE40561E1 (en) 1992-04-27 2008-11-04 Denso Corporation Acceleration sensor and process for the production thereof
USRE41213E1 (en) 1992-04-27 2010-04-13 Denso Corporation Dynamic amount sensor and process for the production thereof
USRE41047E1 (en) 1992-04-27 2009-12-22 Denso Corporation Acceleration sensor and process for the production thereof
USRE40347E1 (en) 1992-04-27 2008-06-03 Denso Corporation Acceleration sensor and process for the production thereof
US6422078B2 (en) 1992-08-21 2002-07-23 Denso Corporation Semiconductor mechanical sensor
US6463803B2 (en) 1992-08-21 2002-10-15 Nippon Denso Co., Ltd. Semiconductor mechanical sensor
US7685877B2 (en) 1992-08-21 2010-03-30 Denso Corporation Semiconductor mechanical sensor
US6868727B2 (en) 1992-08-21 2005-03-22 Denso Corporation Semiconductor mechanical sensor
US7866210B2 (en) 1992-08-21 2011-01-11 Denso Corporation Semiconductor mechanical sensor
US6938486B2 (en) 1992-08-21 2005-09-06 Denso Corporation Semiconductor mechanical sensor
US7040165B2 (en) 1992-08-21 2006-05-09 Denso Corporation Semiconductor mechanical sensor
US7407827B2 (en) 1992-08-21 2008-08-05 Denso Corporation Semiconductor mechanical sensor
US6550331B2 (en) 1992-08-21 2003-04-22 Denso Corporation Semiconductor mechanical sensor
USRE42359E1 (en) 1992-10-13 2011-05-17 Denso Corporation Dynamical quantity sensor
US5399415A (en) * 1993-02-05 1995-03-21 Cornell Research Foundation, Inc. Isolated tungsten microelectromechanical structures
US5426070A (en) * 1993-05-26 1995-06-20 Cornell Research Foundation, Inc. Microstructures and high temperature isolation process for fabrication thereof
US5610335A (en) * 1993-05-26 1997-03-11 Cornell Research Foundation Microelectromechanical lateral accelerometer
US5640133A (en) * 1995-06-23 1997-06-17 Cornell Research Foundation, Inc. Capacitance based tunable micromechanical resonators
US5914553A (en) * 1997-06-16 1999-06-22 Cornell Research Foundation, Inc. Multistable tunable micromechanical resonators
US6877383B2 (en) 1998-03-31 2005-04-12 Hitachi, Ltd. Capacitive type pressure sensor
JP2007511945A (en) * 2003-11-14 2007-05-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Semiconductor device comprising a resonator
JP2009294225A (en) * 2009-09-17 2009-12-17 Denso Corp Semiconductor dynamic quantity sensor
JP2011237403A (en) * 2010-04-15 2011-11-24 Dainippon Printing Co Ltd Dynamical quantity sensor and method for manufacturing dynamical quantity sensor

Similar Documents

Publication Publication Date Title
JPS5690525A (en) Manufacture of semiconductor device
JPH04260368A (en) Multi-wavelength inflared ray detecting device
JPH01313956A (en) Method for separating integrated circuit chip
JPS6293668A (en) Angular speed/acceleration detector
JPH04326033A (en) Pressure or acceleration sensor
JPH0269936A (en) Method for forming resin structure on semiconductor material
JPH0362482A (en) Electrode forming method and electronic device including electrode formed by the method
JPH02110968A (en) Semiconductor device and its manufacture and multilayer semiconductor device
JPH02102518A (en) Detection of surface position
JPH0287684A (en) Integrated pin light detector and method thereof
JPH0344030A (en) Manufacturing semiconductor device
JPS62213280A (en) Semiconductor acceleration sensor
JPH04233294A (en) Device having substrate and unit
EP0237280A3 (en) Magnetic sensor
JPH04355917A (en) Manufacturing device for semiconductor device
JPH04225285A (en) Silicon photodiode for monolithic integrated circuit and its manufacture
JPS61234064A (en) Semiconductor vibration detector
EP0358350A3 (en) Forming a Prescribed Pattern on a Semiconductor Device Layer
JPH04211144A (en) Method for manufacturing fine top end obtained as cantilever
JPH0290617A (en) Manufacture of semiconductor device
EP0029552A3 (en) Method for producing a semiconductor device
JPH02163938A (en) Manufacture of semiconductor element
JPS5434751A (en) Washing method for silicon wafer
JPH03138920A (en) Semiconductor device
JPH04330730A (en) Semiconductor device and manufacture thereof