TWI245110B - Apparatus of micro angular motion detector and fabrication method thereof - Google Patents

Apparatus of micro angular motion detector and fabrication method thereof Download PDF

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Publication number
TWI245110B
TWI245110B TW093134558A TW93134558A TWI245110B TW I245110 B TWI245110 B TW I245110B TW 093134558 A TW093134558 A TW 093134558A TW 93134558 A TW93134558 A TW 93134558A TW I245110 B TWI245110 B TW I245110B
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Taiwan
Prior art keywords
electrostatic
item
vibration
rotation amount
layer
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TW093134558A
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Chinese (zh)
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TW200615515A (en
Inventor
Kai-Cheng Chang
Pei-Fang Liang
Ming-Hsiu Hsu
Yi-Ru Chen
Ya-Ping Chen
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Ind Tech Res Inst
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Priority to TW093134558A priority Critical patent/TWI245110B/en
Priority to KR1020050105026A priority patent/KR20060052448A/en
Priority to JP2005327591A priority patent/JP2006138855A/en
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Publication of TW200615515A publication Critical patent/TW200615515A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/02—Rotary gyroscopes
    • G01C19/04—Details
    • G01C19/16—Suspensions; Bearings
    • G01C19/24—Suspensions; Bearings using magnetic or electrostatic fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G01C19/5733—Structural details or topology
    • G01C19/5755—Structural details or topology the devices having a single sensing mass
    • G01P9/04—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Gyroscopes (AREA)

Abstract

The present invention provides an apparatus of micro angular motion detector and the fabrication method thereof, which comprises: at least a pair of vibration portions and a detection electrode. The at least a pair of vibration portions are configured on a substrate symmetrically, and the vibration portion has an electrostatic vibration body, a support, and an elastic body. The electrostatic vibration body is apart from the substrate in a suitable distance, and the support is connected with the electrostatic body and the substrate. The elastic body has one end connected to the support, and the other end connected to the electrostatic vibration body. The detection electrode is configured at one side of the set of vibration portions. The pair of vibration portions vibrate due to the electrostatic force, and, during the rotation, because of the effect of Kohl's force, the pair of vibration portions will generate a swinging vertical to the substrate. By detecting the variance of capacitance for the detection electrode and the electrostatic vibration body, it is able to obtain the micro angular motion.

Description

1245110 九、發明說明： 【發明所屬之技術領域】 本發明係、有關於-觀轉韻職置與其製作方法，軸是指一種 利，單-製程光罩形成振動結構本體，質心、穩定且可以量測多轴之旋 轉量之一種旋轉量感測裝置與其製作方法。 【先前技術】 陀螺儀為一慣性感測元件，主要是利用慣性原理來量測旋轉之角速 度，傳統上的應用主要是在於軍事、航空以及航海的導航用途之上。 傳統峨螺儀之原理係利用角動量守恆來達成，然何傳統陀螺儀具有 結構複雜以及高速絲等問題，造成傳·螺儀具#使騎命受到限 制而且價格昂貴且重量重等問題。 隨著民生工業的發展，在各個不同領域，例如··慣性導航、汽車、 機為人、醫學工程、消費性電子產品以及電子娛樂等當中，對於重量 小、價格便宜以及壽命長的陀螺儀需求量增加。不過由於近來近來的 半導體技躺猶演進，使縣合半導體製程、麵以及電子技術而 衍生的微機械(MEMS)製程技術也越來越進步。因此利用微機械的技術 領域可以製造出重量小以及價格便宜的陀螺儀微感測器。 在陀螺儀感測器中，其中以振動式旋轉量感測器為主，因此在文獻 中所公開的技術相當的多。例如U.S.Pat.No.4,381，672所揭露的技術係 為透過一單獨之懸臂樑結構來感測旋轉量。不過單一懸臂樑在振動的 日寸候，該懸臂結構之質心會因為振動的緣故而不斷的改變，因而會產 生雜訊進而干擾到量測的結果。因此在USPatN〇5,445,〇25以及 U.S.Pat.No.6,201，341係利用對稱之振動結構來解決質心改變之缺點。 不過上述兩篇專利所揭露之技術雖可以解決結構上不對稱而造成的質 心變動的問題，但是其結構上並無法以微機械製程技術來縮小其結構。 1245110 置與其製作方法，以 【發明内容】 利用種旋轉量感測裝置與其製作方法，其係 本發明=要目12_多^旋轉量之目的° 法，得以使用微製造技製^之測裝置與其製作方 以產生共振的效果，可對稱之結構組合 電壓之目的。 -元件耗電量，以減低靜電驅動 法 計 法 定 另—目的是提供—種旋轉量感測裝置缝f作方 ，達到降低雜訊干擾之目的。動寺b位置並不改變之設 ，盆0的是提供―種旋轉量感測裳置鱼作方 ’達^程穩 法，述目的’本發明係提供—種旋轉量❹禮置與卿作方 八甘七括有.至少_對振動部以及—感測電極 、 =r=r於，。該振動部係具有-靜二 祕體。雜電振_，其係與縣板相距 二黑’其係與該靜電振動體以及該基板相連接，該彈=， —端與該支點相連接且以另一端與該靜電振動體相連接^糸以 ，生之靜電力而引發振動，在:轉發 此振 :’使得該對振動部產生垂直於該基板之擺動。藉由斜影 #與該靜電振動體之間電容改變量而得知該旋轉量。、‘感測電極 1245110 為了達到上述目的，本發 製作方法，料包括有下種旋轉量感測裝置之 上；（b⑹驟：⑻形成—第—導體層於-美你 上，⑼形成_絕緣層於該第 —體狀基板 方之=部的絕緣層以形成—凹槽】=)去除該第二導體層上 並覆蓋該凹槽；⑹去除覆蓋於該二；=上形成一犧牲層 一導體層之—邱以报占一拉細 槽。卩刀之犧牲層以露出該第 體層並覆㈣测、π Γί (⑽频牲層上碱—第二導 對靜電振動結構；以及(h_4^y_，以形成至少— 為了達到上述目的，本發明更接 ’（b)形成一絕緣層於該第一導體層上； 製作方法其係包括有下咐驟減測裝置之 .·⑻$成一弟一導體層於一基板 ； (d)^, ,1： _ 並覆蓋該凹槽；⑹秘” Μ = 4絕緣層上形成一犧牲 -導體層之槽一部分之犧咖 曰〈4以形成一接觸洞；(f)於該 慣 十月？電振動、、、口構，⑻於該至少一對 性陣列層；以及(i)去除賴牲層。t構捣成至少- 【實施方式】 為使貴審查委員能對本發明之特徵 :與_，文特將本發明之裝置的相關細部結=:二 =相明’《使得_員可《了解本㈣之無詳細說^ 請參閱圖_所示’該_為本發明—槪轉量_裝置之較佳 例示思圖。該旋轉量感測裝置2係、包括有—第—對振動料、一第二 對振動部22、-感測電極部23、—回授電極部％以及—驅動電蝴 1245110 接一下來，將針對本發明之旋轉量感測裝置製造方法，請參閱圖三A 士圖三G所示，該圖係為本發明一種旋轉量感測裝置製^方法之&amp;佳 實施例流程示意圖。該流程3係包括有下列步驟： 又 31形成一第一導體層312於一基板311上(參閱圖三a所示” 32形成—絕緣層321於該第一導體層312上； 幻去除該第-導體層312上方之一部的絕緣層321以形成一凹槽 331(參閱圖三B所示）； 曰 34於該絕緣層切上形成-犧牲層341並覆蓋該凹槽331(參閱圖 二C所不）； 35去除覆蓋於該凹槽33卜部分之犧牲層34丨以露出該第一導體 層312之一部以形成一接觸洞351(參閱圖三D所示” ;/犧牲層341上形成-第二導體層如並覆蓋該接觸洞^(參 閱圖三E所示）； 餘刻部分该第二導體層36卜以形成至少一對靜電振動結構 371(參閱圖三F所示）；以及 38去除該犧牲層341(參閱圖三〇所示）。 施例中’該犧牲層341係選擇為二氧化石夕材料，該絕緣層321 係選擇為氮化矽材料。 為了增加振_效果，可以在該第二導體層上增加至少—層之材料 二加料二導體層質量。請繼續參關四A至圖四㈣示該圖係 H ^ f種旋轉里感測裝置製作方法之另一較佳實施例流程示意 圖。该流程4係包括有下列步驟： 41形成ϋ體層412於一基板411上(參閱圖四A所示）； 42形成一絕緣層42丨於該第一導體層々η上； 43去除该第-導體層似上方之一部的絕緣層切以形成一凹槽 431(參閱圖四Β所示）； !24511〇 44於四上形成一犧牲層441並覆蓋該凹槽初(參閱圖 45去一部分之犧牲層441以露出該第一導體 仏 相形成一接觸洞451(參閱圖四D所干v 48去除該犧牲層441(參閱圖四H所示）。 層441係選擇為二氧_料，該絕緣層- 導體=中ΓΓ該慣性陣列層471係可選擇—導體材料以及半 體材枓其中之—者，而在本實補巾係選擇金(Au)。 了解本Mi構狀㈣方法讀，接下來料對本發明之運作 树續參閱圖五A所示’該圖係為本發明-種旋轉量 電r及該第二對振動趙22具有負二；二振：： 之^電振動體2U會與該第二對振動部22之該靜電振動體如a =電吸力’反之若該第一對振動體21具有正電荷以及該第二對振 具有正電荷的時候’該第一對振動部21之該靜電振動體211 亥第二對振動部22之該靜電振動體211a產生靜電斥力。基於上 述之原則’可以透過對單一對振動部(例如第一對振動部21)通$二驅 動電路部27提供職性魏訊號而產生交流電場，使得該第_對振動 部21與該第二對振_ 22相互產生相吸以及相斥之靜電力，而產生 1245110 平行於該基板(圖中未示)之-振動方向6，而開始振動。 為了控制振狀_產生良好的舰效果，本發 控制電路8連接於該回授電極部24，藉 ’、 才回路 電#動麯911 Λ, Μ1=7知1電極部24感測該靜 、動體川、2lla之，動模_，❿回授給該閉回路控 由於科氏力F係為F=2M^xf，JL_ ^ 工 V係為慣性座標系統之速度， 而Ω係為劍德姻速度，_料—對 =為本發明-種旋轉量感職置受到χ概轉量時該第—對振動部受 ，科氏力之側視示意圖。該第一振動部21以及第二振動部22在受到 砰電力驅誠生振動離態下，當械·置2受到χ _動角速戶 的，響時’會使該第-對振動部21產生垂直於職板丨的擺動。由ς ，弟-對振動部2i之擺動，會改變該第一對振動部21和該感測電極 二3之距離’使得原先该第一對振動部21與該感測電極部23之間的 電容產生變化，鱗透過域測電路部26可以_到電容之變化量^ Cl、AC2，透過在電路訊號上反映出旋轉量之大小。 透過本發明之至少一對振動部的組合，可以偵測複數軸之旋轉量， 例如圖一所示之兩組振動部的結構，可以偵測第一軸(例如X軸)以及 第一軸(例如Υ軸)之旋轉量。此外，透過四對振動部的組合可以偵測 第一軸(例如X軸)、第二軸(例如γ軸)以及第三軸(例如2軸)之旋轉量。 唯以上所述者，僅為本發明之較佳實施例，當不能以之限制本發明 範圍。即大凡依本發明申請專利範圍所做之均等變化及修飾，仍將不 失本發明之要義所在，亦不脫離本發明之精神和範圍，故都應視為本 發明的進一步實施狀況。 綜合上述’本發明由於具有操作容易、製造簡單以及裝配容易之特 點，所以可以滿足業界之需求，境而提高該產業之競爭力，誠已符合 1245110 發明專利法所規定申請發明所需具備之要件，故爰依法呈提發明專利 之申請，謹請貴審查委員允撥時間惠予審視，並賜準專利為禱。 1245110 【圖式簡單說明】 圖一係為本發明一種旋轉量感測裝置之較佳實施例示意圖。圖-係為本㈣—種雜量感職置之較佳實關之振動部結構 示意圖。 圖三A至圖三G係為本發明一 實施例流程示意圖。 種旋轉量感測裝置製作方法之較佳 圖四A至圖四η 較佳實施例流程示意 係為本發明一種旋轉量感測裝置製作方法 圖。 、/之另 圖五Α係為本發明一種旋轉量感測裝置振動示 圖五B係為本發明一種旋轉量感測裝置受到X 該第一對振動部受到科氏力之側視示意圖。 意圖。 轴旋轉量_辰動部1245110 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to the -view-turn rhyme position and its manufacturing method. The shaft refers to a favorable, single-process photomask to form the vibrating structure body, center of mass, stability and stability. A rotation amount sensing device capable of measuring the rotation amount of multiple axes and a manufacturing method thereof. [Previous technology] A gyroscope is an inertial sensing element. It mainly uses the principle of inertia to measure the angular speed of rotation. Traditionally, it is mainly used for military, aviation and navigation navigation purposes. The principle of the traditional gyroscope is achieved by the conservation of angular momentum. However, the traditional gyroscope has problems such as complex structure and high-speed wires, which causes problems such as the restriction of riding life, high price and heavy weight. With the development of the people's livelihood industry, in various fields, such as inertial navigation, automobiles, humans, medical engineering, consumer electronics, and electronic entertainment, there is a demand for gyroscopes with low weight, low price, and long life. The amount increases. However, due to the recent evolution of semiconductor technology, the micro-mechanical (MEMS) process technology derived from the county's semiconductor process, surface and electronic technology has also become more and more advanced. Therefore, it is possible to manufacture gyroscope microsensors with small weight and low cost by using the field of micromechanical technology. Among the gyro sensors, the vibration type rotary sensor is mainly used, so the technology disclosed in the literature is quite large. For example, U.S. Pat. No. 4,381,672 discloses a technique for sensing the amount of rotation through a separate cantilever structure. However, when a single cantilever beam vibrates, the center of mass of the cantilever structure will continuously change due to vibration, which will generate noise and interfere with the measurement results. Therefore, in US Pat. No. 5,445,025 and U.S. Pat. No. 6,201,341, the symmetrical vibration structure is used to solve the disadvantage of the change of the center of mass. However, although the technologies disclosed in the above two patents can solve the problem of centroid changes caused by structural asymmetry, the structure cannot be reduced by micromechanical process technology. 1245110 device and its manufacturing method, with the purpose of [invention] using a kind of rotation amount sensing device and its manufacturing method, which is the present invention = key 12_ more ^ rotation amount purpose ° method, can use the micro manufacturing technology ^ measuring device and its Produced to produce the effect of resonance, the purpose of combining voltages with symmetrical structures. -The power consumption of the components is determined by reducing the electrostatic drive method. Another purpose is to provide a kind of rotation amount sensing device to achieve the purpose of reducing noise interference. The position of the moving temple b is not changed. What is provided in the basin 0 is to provide a kind of rotation amount sensing method for setting the fish as a method to achieve the stability of the process. The purpose of the present invention is to provide a kind of rotation amount. Seven brackets include at least _ for the vibrating part and-the sensing electrode, = r = r 于,. The vibrating part has a -static second secretion. Miscellaneous electric vibration, which is two black away from the county board, it is connected to the electrostatic vibrating body and the substrate, and the bullet =,-the end is connected to the fulcrum and the other end is connected to the electrostatic vibrating body ^ Therefore, the generated electrostatic force causes vibration, and the vibration is forwarded: 'The vibration of the pair of vibration parts is perpendicular to the substrate. The amount of rotation is obtained by the amount of capacitance change between the oblique shadow # and the electrostatic vibrating body. "'Sense electrode 1245110 In order to achieve the above purpose, the production method of the present invention includes the following rotation amount sensing device; (b step: ⑻ formation-the first-conductor layer on-Me you, ⑼ formation _ insulation layer To form a groove on the first part of the body-shaped substrate to form a groove— =) remove the second conductor layer and cover the groove; ⑹ remove and cover the two; and form a sacrificial layer and a conductor Layers-Qiu Yibao occupies a drawing slot. The sacrificial layer of the trowel is exposed to the first body layer and covered with a test, π Γί (alkali-second guide pair electrostatic vibration structure on the frequency layer; and (h_4 ^ y_ to form at least-in order to achieve the above object, the present invention Furthermore, (b) forming an insulating layer on the first conductor layer; the manufacturing method includes the following steps: a step-down device for testing; • forming a conductor layer on a substrate; (d) ^,, 1: _ and cover the groove; ⑹ Secret "M = 4 A sacrificial part of a groove forming a conductor layer on the insulating layer is formed <4 to form a contact hole; (f) In this customary October? Electrical vibration The structure of the at least one pair of sexual arrays; and (i) removing the layer of Lai. The structure of t is at least-[Embodiment] In order to allow your review committee to make features of the present invention: and _, text The relevant details of the device of the present invention are specifically summarized as follows :: == Mingming '"Make _ members available" to understand the details of this book ^ Please refer to the figure _ shown _ this _ this invention-槪 turn amount _ device of A preferred example is a schematic diagram. The rotation amount sensing device 2 includes a first pair of vibrating materials, a second pair of vibrating portions 22, and a sensing electrode portion 23. —Feedback electrode unit% and—Drive the electric butterfly 1245110 Next, the manufacturing method of the rotation amount sensing device of the present invention will be described. Please refer to FIG. 3A and FIG. 3G, which is a rotation amount sensing of the present invention. Schematic diagram of a preferred embodiment of the device manufacturing method. The process 3 includes the following steps: 31. A first conductor layer 312 is formed on a substrate 311 (see FIG. 3a). 32 Formation-insulation layer 321 On the first conductive layer 312; removing the insulating layer 321 above the first conductive layer 312 to form a groove 331 (see FIG. 3B); 34 is formed by cutting the insulating layer- The sacrificial layer 341 covers the groove 331 (see FIG. 2C); 35 removes the sacrificial layer 34 covering the groove 33b to expose a part of the first conductor layer 312 to form a contact hole 351 (Refer to FIG. 3D); / formed on the sacrificial layer 341-a second conductive layer such as and covering the contact hole ^ (see FIG. 3E); a portion of the second conductive layer 36 is used to form at least one To the electrostatic vibration structure 371 (see FIG. 3F); and 38 to remove the sacrificial layer 341 (see (Shown in Figure 30). In the embodiment, 'the sacrificial layer 341 is selected as a dioxide material, and the insulating layer 321 is selected as a silicon nitride material. In order to increase the vibration effect, it may be on the second conductor layer. Add at least one layer of material, two materials, and the mass of the second conductor layer. Please continue to refer to Figure 4A to Figure 4 to illustrate another preferred embodiment of the manufacturing method of the H ^ f rotating sensing device in the figure. This process The 4 series includes the following steps: 41 forming a body layer 412 on a substrate 411 (see FIG. 4A); 42 forming an insulating layer 42 丨 on the first conductor layer 々η; 43 removing the first-conductor layer like The upper part of the insulating layer is cut to form a groove 431 (see FIG. 4B);! 24511〇44 forms a sacrificial layer 441 on the four and covers the beginning of the groove (see FIG. 45 to part of the sacrificial layer) 441 forms a contact hole 451 by exposing the first conductor phase (see FIG. 4D and v 48 to remove the sacrificial layer 441 (see FIG. 4H). The layer 441 is selected as the dioxin material, the insulation layer-the conductor = medium Γ, the inertial array layer 471 is the choice of the conductor material and the half body material, and the gold (Au ). Understand the method of reading the Mi configuration, and then continue to refer to the operation of the present invention as shown in Figure 5A. 'The picture is the invention-a kind of rotation quantity r and the second pair of vibration Zhao 22 has a negative two; Vibration: ^ The electric vibrating body 2U will interact with the electrostatic vibrating body of the second pair of vibrating parts 22 as a = electric attraction ', otherwise if the first pair of vibrating bodies 21 has a positive charge and the second pair of vibrating bodies has a positive charge At that time, the electrostatic vibrating body 211 of the first pair of vibrating parts 21 and the electrostatic vibrating body 211a of the second pair of vibrating parts 22 generate an electrostatic repulsive force. Based on the above-mentioned principle, an AC electric field can be generated by providing a job signal to a single pair of vibrating parts (for example, the first pair of vibrating parts 21) through the second driving circuit part 27, so that the first pair of vibrating parts 21 and the second The electrostatic force of vibration_22 attracts and repels each other, and generates 1245110 which is parallel to the vibration direction 6 of the substrate (not shown), and starts to vibrate. In order to control the vibration shape and produce a good warship effect, the control circuit 8 of the present invention is connected to the feedback electrode portion 24, and the electric circuit portion #moving 911 Λ, Μ1 = 7 knows that the electrode portion 24 senses the static, Of the moving body and 2lla, the moving mode _, ❿ is given to the closed-loop control. Because the Coriolis force F system is F = 2M ^ xf, JL_ ^ Industrial V system is the speed of the inertial coordinate system, and Ω is the sword virtue. Marriage speed, _ material-pair = is the present invention-a kind of rotation quantity sensory position is subject to the χ approximate rotation amount, the first-pair of vibration parts, Coriolis force side view. When the first vibrating part 21 and the second vibrating part 22 are vibrated in a state of being driven by a bang electric force, when the mechanical device 2 is subjected to a χ_angular angular velocity, it will make the first pair of vibrating parts 21 Generates a swing perpendicular to the board. The swing of the vibrating part 2i will change the distance between the first vibrating part 21 and the sensing electrode 23, so that the original distance between the first vibrating part 21 and the sensing electrode part 23 will be changed. The capacitance changes, and the scale through the field measurement circuit section 26 can obtain the change amount of the capacitance ^ Cl, AC2, and the magnitude of the rotation amount is reflected on the circuit signal. Through the combination of at least one pair of vibrating parts of the present invention, the amount of rotation of multiple axes can be detected. For example, the structure of the two sets of vibrating parts shown in FIG. 1 can detect the first axis (such as the X axis) and the first axis (such as the X axis). For example, the axis of rotation). In addition, the amount of rotation of the first axis (such as the X axis), the second axis (such as the γ axis), and the third axis (such as the 2 axis) can be detected through a combination of four pairs of vibrating parts. The above are only preferred embodiments of the present invention, and should not be used to limit the scope of the present invention. That is to say, any equal changes and modifications made in accordance with the scope of the patent application of the present invention will still not lose the essence of the present invention, nor depart from the spirit and scope of the present invention, so they should be regarded as the further implementation status of the present invention. In summary, the present invention has the characteristics of easy operation, simple manufacture, and easy assembly, so it can meet the needs of the industry and improve the competitiveness of the industry. It has already met the requirements for applying for inventions under the 1245110 Invention Patent Law. Therefore, I have submitted an application for an invention patent in accordance with the law. I would like to ask your review committee to allow time for review and grant the patent as a prayer. 1245110 [Brief description of the drawings] FIG. 1 is a schematic diagram of a preferred embodiment of a rotation amount sensing device according to the present invention. Figure-This is a schematic diagram of the structure of the vibrating part for a better practical position of the miscellaneous sense position. Figures 3A to 3G are schematic flowcharts of an embodiment of the present invention. A preferred method for manufacturing a rotation amount sensing device Figure 4A to Figure 4n shows the flow chart of the preferred embodiment, which is a diagram of a method for manufacturing a rotation amount sensing device according to the present invention. Figure 5A is a vibration diagram of a rotation amount sensing device of the present invention. Figure 5B is a side view of a rotation amount sensing device of the present invention subjected to X. The first pair of vibration parts is subject to Coriolis force. intention. Shaft rotation amount_ 辰 动 部

圖號說明：1- 基板 2- 旋轉量感測裝置 21-第一對振動部 211- 靜電振動體 211a-靜電振動體 212- 支點Explanation of drawing numbers: 1- substrate 2- rotation amount sensing device 21- first pair of vibrating parts 211- electrostatic vibrating body 211a- electrostatic vibrating body 212- fulcrum

213- 彈性體 214- 質量體 215- 回授梳狀體 216- 靜電梳狀體 22- 第二對振動部 23- 感測電極部 24- 回授電極部 13 1245110 241-梳狀電極結構 25- 驅動電極板 26- 感測電路部 27- 驅動電路部 3- 流程 31〜37-步驟 311 -基板 312-第一導體層 321-絕緣層 331-凹槽 341-犧牲層 351-接觸洞 361-第二導體層 371-靜電振動結構 4- 流程 41〜48-步驟 411- 基板 412- 第一導體層 421-絕緣層 431-凹槽 441-犧牲層 451-接觸洞 461-第二導體層 471-慣性陣列層 481-靜電振動結構 6-振動方向 1245110 7- 科氏力 8- 回授控制電路213- Elastomer 214- Mass body 215- Feedback comb body 216- Electrostatic comb body 22- Second pair of vibrating parts 23- Sensing electrode part 24- Feedback electrode part 13 1245110 241-Comb electrode structure 25- Driving electrode plate 26- Sensing circuit portion 27- Driving circuit portion 3- Process 31 to 37-Step 311-Substrate 312-First conductor layer 321-Insulation layer 331-Groove 341-Sacrificial layer 351-Contact hole 361-Section Two conductor layers 371-Electrostatic vibration structure 4- Process 41 ~ 48-Step 411- Substrate 412- First conductor layer 421- Insulation layer 431- Groove 441- Sacrificial layer 451- Contact hole 461- Second conductor layer 471- Inertia Array layer 481-Electrostatic vibration structure 6-Vibration direction 1245110 7-Coriolis force 8-Feedback control circuit

Claims (1)

1245110 十、申請專利範圍： h一種旋轉量_裝置，其係包括有： 至動部’其係對稱設置於一基板上，該振動部係具有. ^電振動體，其係為導體且與該基板相距—適當距離，二 電振動體係與-驅動電極板作電性連接； 呀 支點，其係與該靜電振動體以及該基板相連接； 與該細目連接且以另—端與該靜電振 極部，其係設置於該基板上錄於触振_之 二=利範圍第1項所述之旋轉量感測裝置，其中該靜電振_ 個質量體，該複數㈣量體係以適當間隔排列於“ 3.如申請專鄕㈣2項所述之旋轉量感難置，其中 選擇一導體材料以及-半導體材料其中之一者。、係為 4· ^申^專利範圍第丨項所述之旋轉量感測裝置，其係更包 =極位於該靜電振動體之一側，該回授電極係用於驅動該靜電振 動體振動時之一閉迴路控制。 5·=請專利範圍第4項所述之旋轉量感測裝置，其該回授電極與該 靜電振動體之間係具有一梳狀電極結構。 6. 如申請專利範圍第i項所述之旋轉量感測裝置，其係更包括有一驅 動電路部，該驅動電路部係與該驅動電極板作電性連接，可提供誃 靜電振動體電場使該靜電振動體因靜電力產生振動。 7. 如申請專職_ 6項所述錢轉域職置，射魏場所產生 之訊號係為一周期性電氣訊號。 8·如申請專利範圍第1項所述之旋轉量感測裝置，其係更包括有一感 測電路部，該感測電路部係與該感測電極部作電性連才妾，可以感= 16 1245110 琢歡測電極部與該靜電振動體之間的電容改變量。 圍第1項所述之旋轉量_置，其巾㈣—_ 動和係由-第—對振動部以及一第二對振 振動部係與該第二對振動部正交。 職°亥弟對 1〇.=ΐ^範圍第9項所述之旋轉量感測裝置，其中該第一對振動 邛係了感測一第一旋轉軸之旋轉量以及該 —第二轴錢轉量。 舰動部係可感測 相鄰之間至少—側邊具有相互交錯排列之 至沙一梳狀電極結構。 12. 如申請專利範圍第J項所述之旋轉量感測 13. 如申請專利範圍第i項所述之旋轉量感测巢置，其中該 係以該彈性體與該支點連 人 x豆 連接處之連線鱗财贿電振動體之 14:==r述之旋轉量感測裝置'其中該彈性_ 撕下卿： (b) (c) (d) (e) (f) 形成一絕緣層於該第一導體層上； 去除4第-導體層上方之一部的絕緣層以形成一凹槽· 於該絕緣層上形成一犧牲層並覆蓋該凹槽；曰’ =除覆f於該凹槽—部分之犧牲層以露出該第-導體層之-部以形成一接觸洞； 於摘牲層上形成一第二導體層並覆蓋該接觸洞； 17 1245110 (g) 去除部分該第二導體層，以形成至少一對靜電振動結構；以 及 (h) 去除該犧牲層。 16. 如申請專利範圍第15項所述之旋轉量感測裝置之製作方法，其中 於該步驟(g)與該步驟(h)之間係更包括於該至少一對靜電振動結構 上形成至少一慣性陣列層之步驟。 17. 如申請專利範圍第16項所述之旋轉量感測裝置之製作方法，該慣 性陣列層係為選擇一導體材料以及一半導體材料其中之一者。 18. 如申請專利範圍第17項所述之旋轉量感測裝置之製作方法，該半 導體材料係為一多晶砍。 19. 如申請專利範圍第15項所述之旋轉量感測裝置之製作方法，該犧 牲層係為二氧化矽。 20. 如申請專利範圍第15項所述之旋轉量感測裝置之製作方法，該絕 緣層係為氮化矽。1245110 10. Scope of patent application: h A rotation amount _ device, which includes: to the moving part 'It is symmetrically arranged on a substrate, the vibration part has. ^ Electric vibration body, which is a conductor and is connected with the The distance between the substrates—at an appropriate distance, the two electric vibration system is electrically connected to the drive electrode plate; the fulcrum is connected to the electrostatic vibrator and the substrate; connected to the detail and connected to the electrostatic vibrator at the other end. The rotating volume sensing device described on the substrate is recorded in the touch vibration _ bis = the range of the profit 1 item, wherein the electrostatic vibration _ mass bodies, the complex mass system is arranged at appropriate intervals in the " 3. It is difficult to sense the amount of rotation according to item 2 of the application, in which one of a conductive material and a semiconductor material is selected. The rotation amount sensing device described in item 4 of the patent application Its feedback pole is located on one side of the electrostatic vibrating body, and the feedback electrode is used to drive a closed-loop control when the electrostatic vibrating body vibrates. 5 · = Please feel the amount of rotation described in item 4 of the patent scope Testing device whose feedback There is a comb-shaped electrode structure between the pole and the electrostatic vibrating body. 6. The rotation amount sensing device as described in item i of the patent application scope further includes a driving circuit portion, and the driving circuit portion is connected with the driving The electrode plates are electrically connected, which can provide the electric field of the electrostatic vibrating body to cause the electrostatic vibrating body to vibrate due to electrostatic force. 7. If applying for a full-time job _ 6 as described in the Qian Zhuan Yu position, the signal generated at the She Wei site is a Periodic electrical signal. 8. The rotation amount sensing device according to item 1 of the scope of patent application, further comprising a sensing circuit portion, and the sensing circuit portion is electrically connected to the sensing electrode portion. Can be sensed = 16 1245110 The measured capacitance change between the electrode section and the electrostatic vibrating body. The amount of rotation described in item 1 is set, and its towels are moved by the first section of the vibration section. And a second pair of vibrating parts is orthogonal to the second pair of vibrating parts. The rotation amount sensing device according to item 9 in the range of 10 .. Senses the amount of rotation of a first rotation axis and the-second The amount of money is transferred. The ship's moving part can sense at least-the side has a comb-shaped electrode structure staggered to each other. 12. The rotation amount sensing as described in item J of the scope of patent application 13. The rotation amount sensing nest described in item i of the scope of the patent application, wherein the rotation amount is described by the connection between the elastic body and the fulcrum connected to the x bean connection. Test device 'where the elasticity_ tear off: (b) (c) (d) (e) (f) forming an insulation layer on the first conductor layer; removing the insulation of a part above the 4th-conductor layer Layer to form a groove · A sacrificial layer is formed on the insulating layer and covers the groove; '= except that the sacrificial layer of the groove is partially covered to expose the-portion of the -conductor layer to form a A contact hole; forming a second conductor layer on the picking layer and covering the contact hole; 17 1245110 (g) removing part of the second conductor layer to form at least one pair of electrostatic vibration structures; and (h) removing the sacrificial layer . 16. The method for manufacturing a rotation amount sensing device according to item 15 of the scope of patent application, wherein between step (g) and step (h) further includes forming at least one of the at least one pair of electrostatic vibration structures. Steps in the inertial array layer. 17. According to the manufacturing method of the rotation amount sensing device described in item 16 of the scope of the patent application, the inertia array layer is one of selecting a conductive material and a semiconductor material. 18. According to the manufacturing method of the rotation amount sensing device described in item 17 of the scope of patent application, the semiconductor material is a polycrystalline chip. 19. According to the manufacturing method of the rotation amount sensing device described in item 15 of the scope of patent application, the sacrificial layer is silicon dioxide. 20. The method for manufacturing a rotation amount sensing device as described in item 15 of the scope of the patent application, wherein the insulating layer is silicon nitride. 1818
TW093134558A 2004-11-12 2004-11-12 Apparatus of micro angular motion detector and fabrication method thereof TWI245110B (en)

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Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3293194B2 (en) * 1992-10-13 2002-06-17 株式会社デンソー Mechanical quantity sensor
US5734105A (en) * 1992-10-13 1998-03-31 Nippondenso Co., Ltd. Dynamic quantity sensor
JPH0791958A (en) * 1993-09-27 1995-04-07 Canon Inc Angular velocity sensor
JP3077077B2 (en) * 1994-01-28 2000-08-14 ザ・チャールズ・スターク・ドレイパー・ラボラトリー・インコーポレイテッド Inertial rate sensor
JP3435850B2 (en) * 1994-10-28 2003-08-11 株式会社デンソー Semiconductor dynamic quantity sensor and method of manufacturing the same
KR100374804B1 (en) * 1995-05-25 2003-05-09 삼성전자주식회사 Vibration type gyroscope
DE19530007C2 (en) * 1995-08-16 1998-11-26 Bosch Gmbh Robert Yaw rate sensor
JPH09325032A (en) * 1996-06-03 1997-12-16 Ngk Spark Plug Co Ltd Angular velocity sensor
JPH102811A (en) * 1996-06-14 1998-01-06 Murata Mfg Co Ltd External force measuring device and manufacture of the same
JPH1089968A (en) * 1996-09-12 1998-04-10 Murata Mfg Co Ltd Angular velocity sensor
US5955668A (en) * 1997-01-28 1999-09-21 Irvine Sensors Corporation Multi-element micro gyro
US5911156A (en) * 1997-02-24 1999-06-08 The Charles Stark Draper Laboratory, Inc. Split electrode to minimize charge transients, motor amplitude mismatch errors, and sensitivity to vertical translation in tuning fork gyros and other devices
DE69938658D1 (en) * 1999-09-10 2008-06-19 St Microelectronics Srl Insensitive to mechanical stress microelectromechanical structure
JP2001153662A (en) * 1999-11-30 2001-06-08 Kyocera Corp Piezoelectric sensor
JP2004004119A (en) * 2003-08-06 2004-01-08 Denso Corp Semiconductor dynamic quantity sensor

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