JP5572936B2 - 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 - Google Patents

熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 Download PDF

Info

Publication number
JP5572936B2
JP5572936B2 JP2008246255A JP2008246255A JP5572936B2 JP 5572936 B2 JP5572936 B2 JP 5572936B2 JP 2008246255 A JP2008246255 A JP 2008246255A JP 2008246255 A JP2008246255 A JP 2008246255A JP 5572936 B2 JP5572936 B2 JP 5572936B2
Authority
JP
Japan
Prior art keywords
optical semiconductor
resin composition
group
semiconductor element
molding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008246255A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009149845A (ja
JP2009149845A5 (https=
Inventor
勇人 小谷
直之 浦崎
真人 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Priority to JP2008246255A priority Critical patent/JP5572936B2/ja
Publication of JP2009149845A publication Critical patent/JP2009149845A/ja
Publication of JP2009149845A5 publication Critical patent/JP2009149845A5/ja
Application granted granted Critical
Publication of JP5572936B2 publication Critical patent/JP5572936B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2008246255A 2007-11-26 2008-09-25 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 Active JP5572936B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008246255A JP5572936B2 (ja) 2007-11-26 2008-09-25 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007304255 2007-11-26
JP2007304255 2007-11-26
JP2008246255A JP5572936B2 (ja) 2007-11-26 2008-09-25 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

Publications (3)

Publication Number Publication Date
JP2009149845A JP2009149845A (ja) 2009-07-09
JP2009149845A5 JP2009149845A5 (https=) 2011-12-08
JP5572936B2 true JP5572936B2 (ja) 2014-08-20

Family

ID=40919355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008246255A Active JP5572936B2 (ja) 2007-11-26 2008-09-25 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

Country Status (1)

Country Link
JP (1) JP5572936B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2540776B1 (en) 2007-09-25 2017-08-09 Hitachi Chemical Co., Ltd. Thermosetting light-reflecting resin composition, optical semiconductor element mounting board produced therewith, method for manufacture thereof, and optical semiconductor device
JP5262644B2 (ja) * 2007-12-04 2013-08-14 日立化成株式会社 成型体の離型性評価方法及び成型体の製造方法
JP5401905B2 (ja) * 2008-04-25 2014-01-29 日立化成株式会社 熱硬化性樹脂組成物
JP5325560B2 (ja) * 2008-12-18 2013-10-23 スタンレー電気株式会社 発光装置、および、発光装置の製造方法
JP5751260B2 (ja) 2012-01-17 2015-07-22 大日本印刷株式会社 電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、及び成形体の製造方法
JP2012162729A (ja) * 2012-04-11 2012-08-30 Hitachi Chemical Co Ltd 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP6149457B2 (ja) * 2013-03-28 2017-06-21 大日本印刷株式会社 光半導体実装用基板、半導体発光装置、及び光半導体実装用基板の製造方法
JP7274245B1 (ja) * 2023-01-31 2023-05-16 国立大学法人 名古屋工業大学 離型条件評価方法、離型条件評価システムおよびプログラム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037898A (en) * 1990-02-27 1991-08-06 Shell Oil Company Polysiloxane-polylactone block copolymer modified thermostat compositions
JP3334998B2 (ja) * 1994-03-30 2002-10-15 住友ベークライト株式会社 エポキシ樹脂組成物
JP2000281750A (ja) * 1999-03-31 2000-10-10 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
JP3870825B2 (ja) * 2002-02-27 2007-01-24 日立化成工業株式会社 封止用エポキシ樹脂成形材料及び電子部品装置
JP5060707B2 (ja) * 2004-11-10 2012-10-31 日立化成工業株式会社 光反射用熱硬化性樹脂組成物
CN101268559B (zh) * 2005-08-04 2010-11-17 日亚化学工业株式会社 发光装置及其制造方法以及成形体及密封构件
JP5303097B2 (ja) * 2005-10-07 2013-10-02 日立化成株式会社 熱硬化性光反射用樹脂組成物、ならびにこれを用いた光半導体搭載用基板とその製造方法および光半導体装置。
KR20090013230A (ko) * 2006-06-02 2009-02-04 히다치 가세고교 가부시끼가이샤 광반도체소자 탑재용 패키지 및 이것을 이용한 광반도체장치
JP5540487B2 (ja) * 2007-09-25 2014-07-02 日立化成株式会社 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP5239688B2 (ja) * 2007-11-13 2013-07-17 日立化成株式会社 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

Also Published As

Publication number Publication date
JP2009149845A (ja) 2009-07-09

Similar Documents

Publication Publication Date Title
KR101671086B1 (ko) 열경화성 광반사용 수지 조성물, 이것을 이용한 광반도체 소자 탑재용 기판 및 그 제조 방법, 및 광반도체 장치
JP5540487B2 (ja) 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP5176144B2 (ja) 熱硬化性光反射用樹脂組成物、これを用いた光半導体搭載用基板及びその製造方法、並びに光半導体装置
JP5572936B2 (ja) 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP5421546B2 (ja) 熱硬化性光反射用樹脂組成物、並びにその樹脂組成物を用いた光半導体素子搭載用基板及び光半導体装置
JP5239688B2 (ja) 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP2010254919A (ja) 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP2017103470A (ja) 光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP5644831B2 (ja) リフレクターの製造方法及びled装置
CN105820315A (zh) 热固型光反射用树脂组合物及其制备方法、光半导体元件搭载用反射板及光半导体装置
JP5401907B2 (ja) 熱硬化性樹脂組成物の製造方法、光半導体素子搭載用基板及びその製造方法、並びに、光半導体装置
JP2012162729A (ja) 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP2016028426A (ja) 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
CN102408544B (zh) 光反射用热固化性树脂组合物、用该组合物的光半导体元件搭载用基板及其光半导体装置
JP2017147454A (ja) 光反射用熱硬化性樹脂組成物の製造方法及び光半導体素子搭載用基板の製造方法
JP2014195081A (ja) 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110920

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111020

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A132

Effective date: 20130604

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130805

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140107

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140403

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20140411

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140603

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140616

R151 Written notification of patent or utility model registration

Ref document number: 5572936

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350