JP5546395B2 - Deposited film forming method and deposited film forming apparatus - Google Patents

Description

  The present invention relates to a deposited film forming method and a deposited film forming apparatus such as a semiconductor device, an electrophotographic photosensitive member, an image input line sensor, an imaging device, a photovoltaic device and the like.

  When manufacturing a device, if the manufacturing process includes a process of forming a deposited film in the processing chamber, the cleanliness of the atmosphere to which the substrate is exposed, such as in the processing chamber or in the transfer machine, has a significant effect on the quality of the product. There is. For example, if dust adheres to the surface of the substrate before the formation of the deposited film, a portion where the deposited film grows abnormally using the dust as a nucleus is generated, and the quality of the deposited film is lowered.

  In order to improve the processing capability of the manufacturing process, a plurality of processing chambers may be prepared, and a transporter that can be connected to and disconnected from the processing chambers may be used to move the substrate between the processing chambers. When the manufacturing process has such a configuration, connection and disconnection between the processing chamber and the transfer machine are generally performed through a gate valve. However, the opening / closing operation of the gate valve and the operation of exhausting the space between the processing chamber and the gate valve of the transfer machine become dust generation sites and dust adhesion factors. For this reason, it is common practice to reduce the generation of dust from the gate valve.

There is disclosed a deposited film forming method in which a gate chamber is provided, a gate valve can be removed from the gate chamber, maintenance can be performed without moving the processing chamber from the gate chamber, and maintenance is facilitated. (Patent Document 1)
Further, a method of forming a deposited film is disclosed in which clean air is blown to the operating part side of the gate valve to reduce dust generation from the gate valve. (Patent Document 2).

JP-A-5-87258 JP 2006-70299 A

With the conventional technology, it has become possible to reduce the generation of dust from the gate valve, and it has become possible to produce products with improved quality.
However, for example, in the electrophotographic apparatus, with the digitization and full color of the electrophotographic apparatus, the charging system, the optical exposure system, the developing system, etc. in the electrophotographic apparatus have been improved. Along with this, improvement in image characteristics more than ever has been required for electrophotographic photoreceptors.

  As a result, there has been a demand for reduction of white spot-like and black-spot-like image defects, commonly referred to as “pochi”, in particular, reduction of “pochi” of a minute size that has not been a problem in the past. The “pochi” is caused by “spherical protrusions” that are abnormal growth of the deposited film with dust attached to the surface of the substrate as a nucleus. For this reason, it is required to further reduce dust adhering to the surface of the substrate. There is also a need for a deposited film forming method and a deposited film forming apparatus capable of more efficiently producing a quality product.

  Accordingly, the present invention aims to solve the above-mentioned problems by paying attention to the gate valve and the transfer device. That is, when the substrate is moved from the transfer device to the processing chamber via the gate valve, the dust film is effectively prevented from adhering to the substrate, thereby improving the quality of the deposited film and having excellent productivity. It is an object to provide a forming method and a deposited film forming apparatus.

In order to achieve the above-described object, a deposited film forming method according to the present invention includes a substrate carrying-in process in which a substrate is carried into a processing chamber from a transfer machine in a vacuum atmosphere by a substrate carrying-in / out means, and deposition is performed in the processing chamber. A step of forming a film on the substrate, and a substrate unloading step of unloading the substrate after forming the deposited film from the processing chamber to the transfer device in a vacuum atmosphere by the substrate unloading / unloading means. The processing chamber has at least a processing container and a gate valve, the transfer machine has at least a transfer container, a gate valve, and the substrate carrying-in / out means, and the gate valve is a substrate passage chamber through which the substrate passes. And a valve body retracting chamber in which the valve body is retracted. In the deposited film forming method in which the processing chamber and the transfer device can be connected to each other via the respective gate valves, at least one of the processing chamber and the transfer device is along the loading / unloading direction of the substrate. The gate valve has two valve bodies in series. When the processing chamber has only one valve body, the valve body is the first valve body, and when the processing chamber has two valve bodies, the first valve body in order from the processing container side, The second valve body is used. When the transport machine has only one valve body, the valve body is the first valve body, and when the transport machine has two valve bodies, the first valve body in order from the transport container side, The second valve body is used.
The substrate carry-in process includes at least a connection process, an exhaust process, and a carry-in process. In the connecting step, the processing chamber and the transfer machine are connected to each other through the gate valves. In the exhaust process, the space formed by connecting the gate valve of the processing chamber and the gate valve of the transfer machine is exhausted. In the carrying-in process, the substrate is carried into the processing chamber from the transfer machine in a vacuum atmosphere by the substrate carrying-in / out means.
When the processing chamber and the transfer machine are not connected,
When the processing chamber has only one valve body, the first valve body is fully closed, and when the processing chamber has two valve bodies, at least the second valve body is fully closed. age,
When the transport machine has only one valve body, the first valve body is fully closed, and when the transport machine has two valve bodies, at least the second valve body is fully closed. And
The exhaust process is performed with the first valve body fully closed and the second valve body fully open.

  The deposited film forming apparatus according to the present invention includes at least a gate valve and a processing container, and includes a processing chamber capable of forming a deposited film on a substrate, a gate valve, a transport container, and a substrate carry-in / out means. And at least a transport machine. The gate valve includes a base passage chamber through which the base passes and a valve body retracting chamber in which the valve body is retracted. The processing chamber and the transfer device can be connected to and disconnected from each other via the gate valves, and the substrate loading / unloading means allows the substrate to be loaded and unloaded between the processing chamber and the transfer device in a vacuum atmosphere. Can be done in. At least one of the processing chamber and the transfer machine includes two valve bodies in the gate valve in series along the carry-in / out direction of the substrate.

  According to the present invention, when the substrate is moved from the transfer machine to the processing chamber via the gate valve, the quality of the deposited film is improved by suppressing the adhesion of dust to the substrate, and the deposition having excellent productivity. A film forming method and a deposited film forming apparatus can be provided.

Typical sectional drawing which shows an example of the deposited film formation apparatus concerning this invention Typical sectional drawing which shows an example of the deposited film formation apparatus concerning this invention Schematic sectional view showing an example of a conventional deposited film forming apparatus The schematic diagram which shows an example of the gate valve concerning this invention The schematic diagram which shows an example of the gate valve concerning this invention Schematic sectional view showing an example of the layer structure of the electrophotographic photosensitive member The schematic diagram which shows an example of the procedure of the base | substrate carrying-in process concerning this invention The schematic diagram which shows an example of the procedure of the base | substrate carrying-in process concerning this invention The schematic diagram which shows an example of the procedure of the base | substrate carrying-in process concerning this invention The schematic diagram which shows an example of the procedure of the carrying-out process of the base | substrate after deposit film formation concerning this invention The schematic diagram which shows an example of the procedure of the carrying-out process of the base | substrate after deposit film formation concerning this invention The schematic diagram which shows an example of the procedure of the carrying-out process of the base | substrate after deposit film formation concerning this invention The schematic diagram which shows an example of the procedure of the carrying-out process of the base | substrate after deposit film formation concerning this invention Schematic diagram showing an example of the procedure of a conventional substrate carrying-in process Schematic diagram showing an example of the procedure of a substrate unloading process after forming a conventional deposited film Schematic diagram showing an example of the procedure of the substrate carrying-in process according to the comparative example Schematic diagram showing an example of the procedure of the substrate carrying-in process according to the comparative example Schematic diagram showing an example of the procedure of the substrate carrying-in process according to the comparative example Schematic diagram showing an example of the procedure for carrying out the substrate after forming a deposited film according to the comparative example

Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.
1A and 1B are cross-sectional views schematically showing an example of a deposited film forming apparatus according to the present invention.
The deposited film forming apparatus 1000 includes a processing chamber 1100 and a conveyor 1200. The processing chamber 1100 includes a processing container 1101 and a gate valve 1102. In the present invention, at least one of the processing chamber and the transfer machine has the first valve body and the second valve body in the gate valve from the container side of each in series along the carrying-in / out direction of the substrate. doing. The processing chamber 1100 and the transfer device 1200 can be connected via respective gate valves.
In FIG. 1A (A), as an example, a deposited film forming apparatus 1000 in which a first gate valve 1104 includes a first valve body 1106 and a second gate valve 1103 includes a second valve body 1105 is illustrated. This is shown schematically.
As shown in FIG. 3B (D), each gate valve has a base passage chamber 801 having openings 803 and 804 through which the base 1107 passes, and the valve body 805 is retracted when the gate valve is fully opened. And a valve body evacuation chamber 802.

As shown in FIG. 1A (A), the first valve body 1106 and the second valve body 1105 may have two gate valves, and each gate valve may have one valve body. A single gate valve may have two valve bodies.
Further, the loading / unloading direction of the substrate 1107 in the present invention is the vertical direction in FIG. 1A (A). However, when the substrate 1107 is loaded / unloaded in the horizontal direction due to the apparatus configuration, the horizontal direction is the loading / unloading of the substrate 1107. Direction.

Moreover, the 1st valve body and the 2nd valve body in this invention are made into the 1st valve body and the 2nd valve body from the container side which each of a process chamber and a conveying machine has. Therefore, in FIG. 1A (A), from the processing container 1101 side, the valve body provided in the first gate valve 1104 is the first valve body 1106, and the valve body provided in the second gate valve 1103 is the second valve. It becomes a body 1105.
Then, as shown in FIG. 1B (D), when the transport machine has the first valve body and the second valve body in the gate valve, the first gate valve 701 from the transport container 705 side. The valve body provided in is a first valve body 703. A valve body provided in the second gate valve 702 becomes the second valve body 704.

  The processing chamber 1100 is connected to an exhaust device so that the inside of the processing container 1101 can be in a vacuum atmosphere, and a deposition film can be formed on the substrate 1107 inside the processing container 1101. Good. As an example, FIG. 1A schematically shows an RF-CVD apparatus for manufacturing an electrophotographic photosensitive member by an RF (Radio Frequency) -CVD (Chemical Vapor Deposition) method.

  The shape of the substrate 1107 when the electrophotographic photosensitive member is manufactured may be a shape according to the purpose of use, but a cylindrical substrate 1107 is generally used. The material of the substrate 1107 may be any material that has properties according to the purpose of use. For example, copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, and stainless steel are preferable because of their good electrical conductivity. Among these, aluminum is optimal in consideration of workability and manufacturing cost. In this case, for example, it is preferable to use either an Al—Mg alloy or an Al—Mn alloy.

  The processing chamber 1100 is an apparatus that forms a deposited film on the substrate 1107 by plasma processing. The cathode electrode 1108, the insulator 1109, the upper wall 1110, and the bottom wall 1111 form a processing container 1101 that can be depressurized. The gate valve 1102 includes a first gate valve 1104 having a first valve body 1106 and a second valve body 1105 having a second valve body 1105 in order from the processing container 1101 side along the loading / unloading direction of the base 1107. It consists of a gate valve 1103.

A substrate holder holding unit 1114 for holding a substrate holder 1113 with a substrate 1107 and a cap 1112 attached is provided below the processing container 1101. Since the base holder holding means 1114 is entirely composed of a conductive member, the base holder 1113 is electrically connected to the bottom wall 1111 and is grounded.
A heating heater 1115 is provided inside the processing container 1101. Any heater 1115 may be used as long as it can be used in a vacuum. Specifically, heat exchangers such as sheathed heaters, plate heaters, ceramic heaters, and carbon heaters, heat radiation lamps such as halogen lamps and infrared lamps, and heat exchange using liquid or gas as a heat medium Means are mentioned.

  Further, a raw material gas introduction pipe 1116 for introducing a raw material gas into the processing container 1101 is provided in the processing container 1101. The source gas introduction pipe 1116 extends parallel to the longitudinal direction of the substrate 1107 to be held. The source gas introduction pipe 1116 is connected via a connection pipe 1117 to a gas supply system including a mixing device 1118 with a mass flow controller (not shown) for adjusting the flow rate of the source gas, and a source gas inflow valve 1119. ing.

  In the exhaust system provided in the processing chamber 1100, a vacuum pump unit (not shown) that is an exhaust unit is connected to an exhaust port 1121 of the bottom wall 1111 of the processing container 1101 through an exhaust pipe 1120. An exhaust main valve 1122 is provided in the exhaust pipe 1120. Further, a vacuum gauge 1123 for measuring the internal pressure is attached to the processing container 1101. By using these, the inside of the processing container 1101 can be maintained at a predetermined pressure suitable for each process. As the vacuum pump unit, for example, a rotary pump or a mechanical booster pump can be used. A high frequency power source 1125 is electrically connected to the cathode electrode 1108 via a matching box 1124 having a matching circuit. The upper and lower sides of the cathode electrode 1108 are insulated from the upper wall 1110 and the bottom wall 1111 by an insulator 1109 made of ceramics.

A first gate valve 1104 having a first valve body 1106 and a second gate valve 1103 having a second valve body 1105 are installed on the upper wall 1110. As a result, the substrate holder 1113 that holds the substrate 1107 can be carried in and installed in the processing container 1101 and carried out of the processing container 1101 in a vacuum atmosphere.
When the substrate holder 1113 is carried into the processing container 1101, the holding unit 1126 of the substrate holder 1113 is held by the substrate carrying-in / out means 1203. Next, the substrate holder 1113 is moved into the processing container 1101 and placed on the substrate holder holding means 1114.

Next, the conveyor 1200 will be described with reference to the drawings.
The transport machine 1200 includes a gate valve 1201 and a transport container 1204. Inside the transfer container 1204, a holding unit 1205 and a substrate carry-in / out means 1203 are provided. The holding unit 1205 can hold the base holder 1113. The substrate carry-in / out means 1203 can move up and down. Further, the transfer device 1200 can be vacuum-tight and has a vertical mechanism (not shown) for connection to the processing chamber 1100. Further, the transporter 1200 can move on the rail 1206 in the horizontal direction. By this transfer device 1200, the substrate 1107 can be loaded and unloaded while the processing container 1101 is in a vacuum state.

Next, the deposited film forming method of the present invention will be described. Here, as an example, a case will be described in which the processing chamber 1100 uses the deposited film forming apparatus 1000 of FIG. 1A having the first valve body 1106 and the second valve body 1105 from the processing container 1101 side.
In the present invention, a method of moving only the base 1107 may be used. Alternatively, a method of moving the base 1107 with the cap 1112 attached to the base holder 1113 may be used.

Here, as an example, a method of moving the base 1107 together with the cap 1112 attached to the base holder 1113 is used to deposit a deposited film containing silicon atoms as the main component on the base 1107 to manufacture an electrophotographic photosensitive member. A method for forming a deposited film will be described.
First, the operation of the gate valve 830 will be described with reference to FIGS. 3A and 3B.
3A and 3B are schematic views showing an example of a gate valve according to the present invention.

FIG. 3A (A) shows a fully closed state in which the valve body 805 closes the opening 804. An opening 803 is formed on the upper side of the substrate passage chamber 801, and an opening 804 is formed on the lower side.
The valve body 805 is provided with a roller 837, a protrusion 838, a stopper 840, and an O-ring 841. The valve body 805 is supported by the gate base 843 via the link mechanism 842. The gate base 843 is attached to the rod 844. The rod 844 passes through the first vacuum bellows 846 that connects the base plate 845 and the valve body retracting chamber 802 and is connected to the base plate 845. The base plate 845 is attached to the first shaft 848 of the first air cylinder 847.
The second shaft 850 of the second air cylinder 849 passes through the second vacuum bellows 851 connecting the valve body retracting chamber 802 and the second air cylinder 849 and is attached to the valve body stopper 852. .

Next, as shown in FIG. 3A (B), first, the base plate 845 is moved by the first air cylinder 847 in a direction approaching the first air cylinder 847 (the direction indicated by the arrow 861). The moving direction at this time is hereinafter defined as the Y direction as shown in FIG. 3A (B).
As the base plate 845 moves, the rod 844 and the second shaft 850 attached to the base plate 845 move in the same direction. Then, the link mechanism 842 moves the valve body 805 substantially linearly in the direction away from the opening 804 by the elastic force of the spring 855. Hereinafter, the moving direction at this time is defined as the X direction as shown in FIG. 3A (B).
When the tip of the valve body stopper 852 reaches the surface 856 of the valve body 805, the movement of the valve body 805 stops. The valve body 805 can no longer move in the X direction, and is positioned farthest from the opening 804 in the substrate passage chamber 801.

  Next, as shown in FIG. 3A (C), the base plate 845 continues to the first air cylinder 847 in the Y direction while the valve body 805 maintains the position in the X direction shown in FIG. 3A (B). It moves in the approaching direction (direction indicated by arrow 861). Further, it moves to the drive end of the first air cylinder 847 and is fully opened.

Next, a method for carrying in the substrate will be described with reference to FIG. 5A.
The substrate carrying-in method in the present invention includes at least a connecting step, an exhausting step, and a carrying-in step. In the connection process, the processing chamber and the transfer machine are connected to each other through the respective gate valves. In the exhaust process, the space formed by connecting the gate valve of the processing chamber and the gate valve of the transfer machine is exhausted. In the carrying-in process, the substrate is carried into the processing chamber from the transfer machine in a vacuum atmosphere by the substrate carrying-in / out means.

First, the base 101 that has been cleaned in the clean room is mounted on the base holder 103 together with the cap 102. Then, the holding unit 104 of the carrier 120 is held by the holding unit 104 of the substrate holder 103 and the substrate carrying-in / out means 106 is operated, so that the substrate holder 103 to which the substrate 101 and the cap 102 are attached is inside the transfer container 107. It is carried in.
Next, the valve body 109 provided in the gate valve 108 of the transfer machine is moved to the base passage chamber 110 to close the opening, and the inside of the transfer container 107 is evacuated by an unillustrated evacuation unit to form a vacuum atmosphere. .

Next, a connection process is performed. In the connection step, the transfer container 107 in a vacuum atmosphere is moved onto the processing chamber 160 as shown in FIG. 5A (Aa).
Then, as shown in FIG. 5A (A-b), the transfer device 120 is lowered, and the gate valve 108 of the transfer device is connected to the second gate valve 122 of the processing chamber.
In the present invention, when the transfer machine 120 and the processing chamber 160 are not connected, it is important that at least the second valve body 124 provided in the second gate valve 122 is fully closed. It is.

This state is compared between the deposited film forming apparatus of the present invention and the conventional deposited film forming apparatus. FIG. 2A is a view showing a conventional deposited film forming apparatus.
In the conventional deposited film forming apparatus shown in FIG. 2A, both the valve body 502 of the gate valve 501 and the valve body 505 of the gate valve 506 are exposed to the atmosphere in which the deposited film forming apparatus 500 is installed. Will be. That is, dust drifting in the atmosphere in which the deposited film forming apparatus 500 is installed adheres to the valve bodies 502 and 505. Even if the atmosphere in which the deposited film forming apparatus 500 is installed is a clean atmosphere such as a clean room, it is difficult to make the atmosphere free from dust. For this reason, when the valve bodies 502 and 505 are exposed to the atmosphere in which the deposited film forming apparatus 500 is installed for a long time, the dust adheres to the valve bodies 502 and 505. The dust adhering to these valve bodies 502 and 505 causes the base passage chamber 503 of the gate valve 501 and the base passage chamber 507 of the gate valve 506 to be contaminated with dust in the exhaust process described later. Then, when the substrate is carried into the processing chamber from the transfer machine in a state where the substrate passage chamber 503 of the gate valve 501 and the substrate passage chamber 507 of the gate valve 506 are contaminated with dust, the dust adheres to the substrate, and the deposited film Cause abnormal growth.

On the other hand, in the deposited film forming apparatus of the present invention, when the transfer device 120 and the processing chamber 160 are not connected, at least the second valve body 124 is fully closed, so the first valve body 123 is It is not exposed to the atmosphere in which the deposited film forming apparatus 180 is installed.
Then, as shown in FIG. 5A (Ac), the first valve body 123 is fully closed, and the second valve body 124 is retracted to the valve body retracting chamber 128 to be fully opened. Then, the space between the gate valve 108 of the transfer device and the second gate valve 122 of the processing chamber is exhausted by an exhaust device (not shown) through the exhaust port 125. Thus, in order to perform the exhaust process in the state where the second valve element 124 contaminated with dust is retracted to the valve element retracting chamber 128, the base passage chambers 110, 127, and 129 of each gate valve are contaminated with dust. Can be suppressed. Then, when the substrate 101 is carried into the processing chamber 160 from the transporter 120, dust can be prevented from adhering to the substrate 101, and as a result, abnormal growth of the deposited film can be suppressed.

Further, as shown in FIG. 1B (E), even when only the transport device 901 has the first valve body 903 and the second valve body 904 from the transport container 902 side, the effect is obtained for the reason described above. It is done. However, in the case of a configuration in which a transport machine is connected on the processing chamber, the configuration in which the transport machine has the first valve body and the second valve body is such that the processing chamber has the first valve body and the second valve body. The effect is small as compared with the configuration having. This is because in the case of a deposited film forming apparatus in which the substrate loading / unloading direction is vertical, dust easily moves to the processing chamber side due to the influence of gravity.
In the case of a deposited film forming apparatus in which the substrate loading / unloading direction is the horizontal direction, there is no such thing as “the dust easily moves to the processing chamber side due to the influence of gravity”. For this reason, even if only the transfer device has the first valve element and the second valve element from the transfer container side, only the processing chamber has the first valve element and the second valve element from the process container side. The same effect as that of the present structure can be obtained.

Further, as shown in FIG. 1B (D), both the processing chamber and the transfer machine have the first valve bodies 703 and 706 and the second valve bodies 704 and 707 from the respective container sides. It is more preferable. With such a configuration, it is possible to further suppress dust from rising to the substrate passage chamber due to exhaust between the gate valves.
Here, the gate valve shown in FIG. 3B (D) is used as the second gate valve, the sectional area of the substrate passage chamber 801 in the AA ′ section is a, and the substrate passage chamber in the BB ′ section. Let b be the cross-sectional area of the opening that connects 801 and the valve body retracting chamber 802. More specifically, the cross-sectional area a indicates a cross-sectional area of the base body passage chamber 801 taken in a direction parallel to the base loading / unloading direction and perpendicular to the moving direction of the valve body. The cross-sectional area b is an opening that connects the base body passage chamber 801 and the valve body retracting chamber 802 in a direction that is parallel to the carry-in / out direction of the base body and perpendicular to the moving direction of the valve body. Refers to the cross-sectional area of the case. If there is a space communicating with the base body passage chamber 801 and the valve body retracting chamber 802, the space is parallel to the loading / unloading direction of the base body and has a cross section perpendicular to the moving direction of the valve body. Of the cross-sectional areas, the portion having the smallest cross-sectional area is defined as an opening, and the cross-sectional area is defined as b.

  When defined in this manner, it is more preferable that a> b because the contamination of the substrate passage chamber 801 can be further suppressed in the exhaust process. This is because the exhaust conductance from the valve body retracting chamber 802 to the base body passage chamber 801 is reduced, so that dust adhering to the second valve body 805 retracted to the valve body retracting chamber 802 enters the base body passage chamber 801. It seems to be because it becomes difficult to invade. As a result, the substrate passage chamber 801 is less likely to be contaminated.

  Further, when the inner surface area of the valve body retracting chamber 802 is c, it is more preferable that the value of b / c is small because the base passage chamber 801 can be further prevented from being contaminated in the exhaust process. This is because the inner surface area of the valve body retracting chamber 802 is increased, so that dust attached to the second valve body 805 retracted in the valve body retracting chamber 802 is likely to adhere to the inner surface of the valve body retracting chamber 802. For this reason, it is considered that dust entering the base passage chamber 801 can be further suppressed. As a result, the substrate passage chamber 801 is less likely to be contaminated. As a range of the value of b / c, 0.01 <b / c <0.4 is preferable in terms of suppression of dust entering the substrate passage chamber 801 and tact time. The inner surface area c will be described in more detail. The inner surface area of the frame body 807 forming the valve body retracting chamber 802 and the surface area of the members inside the valve body retracting chamber 802 are added together. The inner surface area of the frame body 807 forming the valve body retracting chamber 802 is the end of the valve body 805 on the substrate passing chamber 801 side (DD ′ in the figure) when the valve body 805 is fixed at the retracted position. To the inner surface area of the frame body 807 on the valve body retracting chamber 802 side. The surface area of the member inside the valve body retracting chamber 802 includes, for example, a member for moving the valve body 805, a member for fixing the frame body 807, and the like. It refers to the surface area of the body evacuation chamber 802. However, when the frame body 807 forming the valve body retracting chamber 802 and a member inside the valve body retracting chamber 802 are in contact, the area of the contacting portion is excluded.

  Further, as shown in FIG. 1A (A), the exhaust port 1127 provided in the gate valve 1103 may be provided in the base passage chamber 1128. As shown in FIG. 1B (B), the valve body retracting chamber 201 is provided. May be provided. When the exhaust port 203 is provided in the valve body retracting chamber 201, the air flow during the exhaust process does not contaminate the base body passing chamber 202 because the base body passing chamber 202 is upstream and the valve body retracting chamber 201 is downstream. This is more preferable. This is presumably because the dust adhering to the second valve body 204 retracted in the valve body retracting chamber 201 does not easily enter the substrate passage chamber 202. As a result, the substrate passage chamber 202 is less likely to be contaminated.

  In addition, as shown in FIG. 1B (C), when the exhaust port 303 is provided in the base passage chamber 302, a shutter 305 is provided to isolate the base passage chamber 302 and the valve body retracting chamber 301 from each other. It doesn't matter. The shutter 305 may be provided with a mechanism that can be fully opened when the valve body 304 performs an opening / closing operation and can be fully closed during the exhaust process. With such a configuration, the dust attached to the second valve body 304 retracted in the valve body retracting chamber 301 is less likely to enter the base body passage chamber 302.

  Next, an exhaust process is performed. In the exhaust process, until the space closed by the valve body 109 of the transfer machine and the first valve body 123 of the processing chamber becomes substantially the same pressure as the inside of the transfer container 107 and the processing container 130, FIG. In the state shown in FIG. As an exhaust means in the exhaust process, a vacuum pump unit (not shown) is used, and the vacuum pump unit is connected to the exhaust port 125 via an exhaust pipe. For the vacuum pump unit, for example, a rotary pump or a mechanical booster pump can be used.

Next, a carrying-in process is performed. In the carrying-in process, when the space closed by the valve body 109 of the transport machine and the first valve body 123 of the processing chamber becomes substantially the same pressure as the inside of the transport container 107 and the processing container 130, FIG. As shown in -d), the valve body 109 of the transporter is fully opened.
And as shown to FIG. 5A (Ae), the 1st valve body 123 of a process chamber is made into a full open state. Then, as shown in FIG. 5A (A-f), the substrate carry-in / out means 106 is lowered, and the substrate holder 103 with the substrate 101 and the cap 102 attached is moved into the processing container 130.

Then, as shown in FIG. 5A (Ag), after the substrate carrying-in / out means 106 is accommodated in the transfer container 107, the valve body 109 of the transfer machine and the second valve element 124 of the processing chamber are fully closed. . At this time, when the second valve body 124 of the processing chamber is fully closed, the first valve body 123 provided in the processing chamber 160 is not exposed to the atmosphere in which the deposited film forming apparatus 180 is installed. It is important to do so.
In addition, after the second valve body 124 is fully closed, the first valve body 123 of the processing chamber may be fully closed as shown in FIG. 5A (Ah).

After the valve body 109 of the transfer machine and the second valve body 124 of the processing chamber are fully closed, an inert gas is introduced between the valve body 109 of the transfer machine and the second valve body 124 of the processing chamber. By making it atmospheric pressure.
Thereafter, as shown in FIG. 5A (A-i), the transfer machine 120 is lifted and separated from the processing chamber 160, and the carrying-in and installation of the base body 101 into the processing chamber 160 are completed.

After the preparation for forming the deposited film is completed by the above procedure, the deposited film containing silicon atoms as a main component is formed on the surface of the substrate 1107. The procedure will be described with reference to FIG.
First, for example, Ar or He gas necessary for heating the substrate 1107 is introduced into the processing container 1101 through the mixing device 1118, the raw material gas inflow valve 1119, the connection pipe 1117, and the raw material gas introduction pipe 1116. Then, the exhaust speed of the vacuum pump unit (not shown) is adjusted while checking the vacuum gauge 1123 so that the inside of the processing container 1101 has a predetermined pressure. This adjustment can be performed, for example, by adjusting the rotation frequency of a mechanical booster pump of a vacuum pump unit (not shown).

Next, after a predetermined pressure is reached, the temperature of the substrate 1107 is controlled to a desired temperature of 200 ° C. to 450 ° C., more preferably 250 ° C. to 350 ° C. by the heater 1115 for heating.
Then, the main source gas, the dilution gas, and the characteristic improving gas are mixed through the mixing device 1118 and introduced into the processing vessel 1101 through the source gas introduction pipe 1116 as the source gas for forming the deposited film.
At that time, the exhaust speed of the vacuum pump unit (not shown) is adjusted while checking the vacuum gauge 1123 so that the inside of the processing container 1101 has a desired pressure of 13.3 mPa to 1330 Pa.

The main source gas used for forming the deposited film is amorphous silicon such as silane (SiH ₄ ), disilane (Si ₂ H ₆ ), silicon tetrafluoride (SiF ₄ ), and disilicon hexafluoride (Si ₂ F ₆ ). A raw material gas for formation or a mixed gas thereof can be used. As a dilution gas, hydrogen (H ₂ ), argon (Ar), or helium (He) can be used. Further, as the characteristic improving gas, those containing nitrogen atoms, those containing oxygen atoms, those containing carbon atoms, those containing fluorine atoms, or a mixed gas thereof may be used in combination. As those containing nitrogen atoms for use in this, nitrogen _(N 2), ammonia (NH ₃₎ can be mentioned. Oxygen (O ₂ ), nitrogen monoxide (NO), nitrogen dioxide (NO ₂ ), dinitrogen oxide (N ₂ O), carbon monoxide (CO), carbon dioxide (CO ₂ ) are included as oxygen atoms. Is mentioned. As those containing carbon atoms, methane _(CH 4), ethane _{(C 2 H} 6), ethylene _{(C 2 H} 4), acetylene _{(C 2 H} 2), include propane _(C 3 _{H 8).} Examples of those containing fluorine atoms include germanium tetrafluoride (GeF ₄ ) and nitrogen fluoride (NF ₃ ). In addition, a characteristic improving gas such as diborane (B ₂ H ₆ ), boron fluoride (BF ₃ ), or phosphine (PH ₃ ) may be simultaneously introduced into the discharge space.

  Next, after the pressure in the processing container 1101 is stabilized, the high-frequency power source 1125 is set to a desired power, and the high-frequency power is supplied to the cathode electrode 1108 via the high-frequency matching box 1124, thereby A high frequency glow discharge is caused inside. The supplied power can be, for example, in the RF band, in particular at a frequency of 13.56 MHz. This discharge energy excites the deposited film forming gas introduced into the processing chamber 1101, and a desired deposited film containing silicon atoms as a main component is formed on the surface of the substrate 1107.

As described above, a deposited film is formed on the outer peripheral surface of the substrate 1107.
After the deposition film is formed, the supply of the deposition film forming source gas, the high-frequency power, and the heating of the substrate 1107 are stopped, and the inside of the processing container 1101 is exhausted. Thereafter, the inside of the processing vessel 1101 and the source gas introduction pipe 1116 is purged using a purge gas, for example, an inert gas such as Ar, He, or N ₂ .
After the purge process is completed, the process proceeds to a process of unloading the substrate holder 1113 on which the substrate 1107 is mounted from the processing container 1101 using the substrate loading / unloading means 1203.

Next, a method for carrying out the substrate after forming the deposited film will be described with reference to FIG. 6A.
As shown in FIG. 6A (A-a), the transfer machine 120 in which the inside of the transfer container 107 has been evacuated in advance is moved onto the processing chamber 160.
Next, as shown in FIG. 6A (A-b), the transfer machine 120 is lowered, and the gate valve 108 of the transfer machine is connected to the second gate valve 122 of the processing chamber. After the connection, the first valve body 123 of the processing chamber may be fully closed, the second valve body 124 may be fully open, the first valve body 123 of the processing chamber is fully open, and the second The valve body 124 may be fully closed.

Here, as an example, as shown in FIG. 6A (Ac), the first valve body 123 of the processing chamber is fully opened, and the second valve body 124 is fully closed.
Then, in the state shown in FIG. 6A (Ac), the space closed by the valve body 109 of the transporter and the second valve body 124 of the processing chamber is exhausted by an exhaust device (not shown) through the exhaust port 125. To do. Unlike when the substrate 101 is carried into the processing chamber 160 from the transporter 120, the first valve body 123 of the processing chamber is fully opened and the second valve body 124 is fully closed, so that the transporter 120 and the processing chamber are closed. The reason why the space between the 160 gate valves may be exhausted is as follows. When discharging the substrate after the deposited film is formed, even if dust adhering to the second valve element 124 contaminates the substrate passage chambers 110, 127, and 129, the material passing through the space is the substrate after the deposited film is formed. This is because.

When the space closed by the valve body 109 of the transfer machine and the second valve element 124 of the processing chamber becomes substantially the same pressure as that in the transfer container 107 and the processing container 130, FIG. 6A (Ad). As shown in FIG. 2, the valve body 109 of the transporter is fully opened.
Next, as shown in FIG. 6A (A-e), the second valve body 124 of the processing chamber is fully opened.
Next, as shown in FIGS. 6A (Af), the substrate carrying-in / out means 106 is lowered to hold the substrate holder 103 with the deposited film and the cap mounted thereon.

Next, as shown in FIG. 6A (A-g), the substrate carrying-in / out means 106 is raised, and the substrate holder 103 with the substrate and the cap after the deposited film is formed is carried into the inside of the transport container 107.
Next, as shown in FIG. 6A (A-h), the valve body 109 of the transporter is fully closed.
Next, as shown in FIG. 6A (A-i), the second valve body 124 of the processing chamber is fully closed.

  In the present invention, such a procedure is preferably used, and the first valve body 123 of the processing chamber is preferably fully opened. This is for the following reason. Many by-products generated during the formation of the deposited film are attached to the cap 102 and the substrate holder 103 after the deposited film is formed. And when carrying out the base | substrate after deposit film formation to the conveying machine 120, the cap 102 and base | substrate holder 103 to which many by-products adhered in this way pass the space which each gate valve forms. . At this time, the space formed by each gate valve is contaminated with by-products. If the first valve body 123 of the processing chamber is fully closed in a state where the space formed by each gate valve is contaminated, the by-product adheres to the first valve body 123 of the processing chamber and becomes contaminated. This is because it will end up.

  In addition, by fully closing the second valve body 124 of the processing chamber, there is an advantage that the processing chamber 160 and the transfer machine 120 described later can be moved quickly by a work of separation, and the tact time can be shortened. In order to separate the processing chamber 160 from the transfer machine 120, the valve body of either the first valve body 123 or the second valve body 124 of the processing chamber and the valve body 109 of the transfer machine are fully closed. And shall be. At this time, the first valve body 123 or the second valve body 124 in the processing chamber is not contaminated by the by-product floating in the space formed by each gate valve. The following method can be considered to bring any of the valve bodies into the fully closed state. As described above, the first method is a method in which the second valve body 124 of the processing chamber is fully closed while the first valve body 123 of the processing chamber is fully opened. In the second method, the by-product floating in the space formed by each gate valve is processed while the first valve body 123 of the processing chamber and the second valve body 124 of the processing chamber are fully opened. It descends to the container 130 and waits for it to disappear from the space formed by each gate valve. Then, after the by-product disappears from the space formed by each gate valve, the first valve body 123 of the processing chamber is fully closed. In the first method, it is not necessary to wait for the by-product to disappear from the space formed by each gate valve, so that the first method moves faster by the work of separating the processing chamber 160 and the transfer device 120, which will be described later, as compared to the second method. And tact time can be shortened.

Next, as shown in FIG. 6A (A-j), the valve body 109 of the transporter and the second valve body 124 of the processing chamber are fully closed, and then the second valve body 109 of the transporter and the second chamber of the processing chamber. The atmospheric pressure is obtained by introducing an inert gas into the space closed by the valve body 124. Thereafter, the transfer device 120 is lifted and disconnected from the processing chamber 160, and the substrate is unloaded from the processing chamber 160 after the deposited film is formed.
Alternatively, the first valve body 123 of the processing chamber may be fully closed after the substrate after the deposition film is formed from the processing chamber 160 is completed.

In the present invention, it is preferable to use different transport machines for loading the substrate 101 into the processing chamber 160 and for unloading the substrate after deposition film formation from the processing chamber 160.
By distinguishing between the substrate carrying-in transporter and the substrate carrying-out transporter and using them independently, dust adhering to the surface of the substrate 101 can be further reduced. A large amount of by-products generated during the formation of the deposited film are attached to the cap 102 and the substrate holder 103 after the deposited film is formed. For this reason, when the substrate after deposition film formation (after processing) is carried out from the processing chamber 160 to the transfer device 120 and the valve body of the transfer device is fully closed, the by-product attached to the cap 102 and the substrate holder 103 is removed. Falls on the valve body 109 of the transport machine and contaminates the valve body 109 of the transport machine. When a common transport machine is used for loading the substrate into the processing chamber and when unloading the substrate from the processing chamber, a by-product attached to the valve body 109 of the transport device when the substrate 101 is loaded. This is because it may adhere to the surface of the substrate 101 before forming the deposited film.

  In addition, there is an advantage that the tact time can be shortened by separating the transfer machine used when the substrate 101 is carried into the processing chamber 160 and when the substrate after deposition film formation is carried out from the processing chamber 160. In the case of using a common transporter for carrying in the substrate and unloading the substrate after forming the deposited film, the substrate after forming the deposited film is discharged from the transporter, and then the substrate before forming the deposited film is transported. It must move to the process of carrying in. However, when different transport machines are used when the substrate is loaded and when the substrate is unloaded after the deposited film is formed, while the substrate is unloaded from the processing chamber to the transport machine, the substrate is used when the substrate is unloaded. In addition, it is possible to carry out a step of carrying the substrate into the carrier with a carrier used when carrying the substrate. Then, the transport device used when unloading the substrate finishes unloading the substrate after forming the deposited film from the processing chamber to the transport device, and immediately after the separation from the processing chamber is completed, the transport device used when loading the substrate forms the deposited film. This is because the previous substrate can be transferred to the process chamber.

EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited at all by these.
[Example 1]
Using the deposited film forming apparatus 1000 shown in FIG. 1A, an amorphous silicon deposited film having the conditions shown in Table 1 was formed on the surface of a substrate 1107 made of aluminum having an outer diameter of 84 mm, a length of 381 mm, and a thickness of 3 mm. An electrophotographic photosensitive member was produced.

FIG. 4 is a diagram schematically showing a cross-sectional view of the produced electrophotographic photosensitive member, which includes a base 1107, a lower blocking layer 401, a photoconductive layer 402, and a surface layer 403.
Table 2 shows various conditions in Examples and Comparative Examples. Table 2 shows the number of valve bodies provided in the gate valve of the processing chamber and the transfer machine, the position of the exhaust port provided in the gate valve of the processing chamber, the presence or absence of the shutter provided in the second gate valve of the processing chamber, The usage state of the transfer machine in the substrate carrying-in process and the substrate carrying-out process after forming the deposited film, and the state and operation of each valve body in each process are shown. In addition, about the state and operation | movement in each process of each valve body, the process of carrying in a base | substrate from a conveying machine to a processing chamber is a base | substrate carrying-in process, and the process of carrying out the base | substrate after deposit film formation to a conveying machine from a processing chamber. Drawings showing the state and operation of each valve body in each step are shown in the table as the base body unloading step.

In FIG. 5A, in the state shown in FIG. 5A (Ac), the space closed by the valve body 109 of the transporter and the first valve body 123 of the processing chamber is the transport container 107 and the processing container 130. Exhaust was performed from the exhaust port 125 until the pressure was approximately the same as the inside.
6A, the space closed by the valve body 109 of the transporter and the second valve body 124 of the processing chamber in the state shown in FIG. 6A (Ac) is the transport container 107 and the processing container 130. Exhaust was performed from the exhaust port 125 until the pressure was approximately the same as the inside.

  Under these conditions, 20 electrophotographic photoreceptors were produced 20 times in succession and evaluated as follows. The results are shown in Table 3.

(Evaluation of spherical protrusions)
The entire surface of the electrophotographic photosensitive member was observed using an optical microscope, and the number of spherical protrusions was counted. The spherical protrusions to be counted were those having a circumscribed circle diameter of 15 μm or more when viewed from the surface of the electrophotographic photosensitive member. Then, an average value of 20 produced electrophotographic photoreceptors was calculated, and the average value in Example 3 described later was used as a reference (100%), and ranking was performed according to the following criteria.

In this evaluation item, it is determined that the smaller the average value is, the better the result is that the generation of spherical protrusions is suppressed.
7: 35% or more and less than 45% compared to the reference 6: 45% or more and less than 55% compared to the reference 5: 55% or more and less than 65% compared to the reference 4: 65% or more and less than 75% compared to the reference 3: 75% or more and less than 85% compared to the reference 2: 85% or more and less than 95% compared to the reference 1: 95% or more and less than 105% compared to the reference −1: 105% or more and less than 115% compared to the reference −2: 115% or more and less than 125% as compared with the reference. In the evaluation of the spherical protrusion, it is determined that the effect of the present invention is obtained at rank 1 or more.

(Evaluation of tact time)
The time required from the mounting of the substrate used in producing the first electrophotographic photosensitive member to the substrate holder to the completion of the production of 20 electrophotographic photosensitive members 20 times was defined as the takt time. .
Then, the tact time in Example 3 described later was used as a reference (100%), and ranking was performed according to the following criteria.

In this evaluation item, it is determined that the shorter the tact time, the better the result having excellent productivity.
3: 50% or more and less than 70% compared to the reference 2: 70% or more and less than 90% compared to the reference 1: 90% or more and less than 110% compared to the reference

(Comprehensive evaluation)
Based on the score obtained by summing up the values of the ranks given in the evaluation of the spherical protrusion and the tact time, the ranking was comprehensively performed as follows.
AA ... 6 points or more A ... 1 point or more and 5 points or less B ... 0 points or less In the overall evaluation, it is judged that the effect of the present invention is obtained with A rank or more.

[Example 2]
In the procedure of Example 1, the procedure for carrying out the substrate after forming the deposited film was changed as shown in Table 2, and 20 electrophotographic photosensitive members were produced 20 times in the same manner as in Example 1 except that. did.
The procedure of the substrate unloading step after forming the deposited film is performed by changing the procedure of (Ai) to (Aj) in FIG. 6A to (Bi) to (Bk) in FIG. 6B. It was.

6B, in the state shown in FIG. 6B (Bc), the space closed by the valve body 109 of the transporter and the second valve body 124 of the processing chamber is the transport container 107 and the processing container 130. Exhaust was performed from the exhaust port 125 until the pressure was approximately the same as the inside.
And evaluation similar to Example 1 was performed and the result is shown in Table 3.

[Example 3]
In the procedure of Example 1, the number of valve bodies provided in the transfer device and the gate valve of the processing chamber, the procedure of the substrate carrying-in process, and the procedure of the substrate carrying-out process after forming the deposited film are changed as shown in Table 2. Other than that, 20 electrophotographic photosensitive members were produced 20 times in the same manner as in Example 1.
The procedure of the substrate carrying-in process was performed by changing the procedure of (Ac) to (Ai) in FIG. 5A to (Bc) to (Bi) in FIG. 5B.

The procedure for carrying out the substrate after forming the deposited film is performed by changing the procedure (Ac) to (Aj) in FIG. 6A to (Cc) to (Ck) in FIG. 6C. It was.
5B, in the state shown in FIG. 5B (Bc), the space closed by the first valve body 131 of the transporter and the valve body 132 of the processing chamber is the transport container 107 and the processing container 130. Exhaust was performed from the exhaust port 125 until the pressure was approximately the same as the inside.

6C, the space closed by the second valve body 133 of the transporter and the valve body 132 of the processing chamber in the state shown in FIG. 6C (Cc) is the transport container 107 and the processing container 130. Exhaust was performed from the exhaust port 125 until the pressure was approximately the same as the inside.
And evaluation similar to Example 1 was performed and the result is shown in Table 3.

[Example 4]
In the procedure of Example 1, the usage mode of the transfer machine in the substrate carrying-in process and the substrate carrying-out process after forming the deposited film is changed as shown in Table 2, and other than that, the electrophotographic photosensitive member is the same as in Example 1. 20 were produced 20 times continuously.
And evaluation similar to Example 1 was performed and the result is shown in Table 3.

[Example 5]
In the procedure of Example 4, the number of valve bodies provided in the gate valve of the transfer machine, the procedure of the substrate carrying-in process, and the procedure of the carrying-out process of the substrate after forming the deposited film are changed as shown in Table 2, and the others In the same manner as in Example 4, 20 electrophotographic photoreceptors were produced 20 times in succession.
The procedure of the substrate carrying-in step was performed by changing the procedure of (Ac) to (Ai) in FIG. 5A to (Cc) to (Ci) in FIG. 5C.

The procedure for carrying out the substrate after forming the deposited film is performed by changing the procedure (Ac) to (Aj) in FIG. 6A to (Dc) to (Di) in FIG. 6D. It was.
5C, the space closed by the first valve body 131 of the transfer machine and the first valve body 123 of the processing chamber in the state shown in FIG. 5C (Cc) is the transfer container 107, the process. Exhaust was performed from the exhaust port 125 until the pressure was substantially the same as that in the container 130.

6D, the space closed by the second valve body 133 of the transporter and the second valve body 124 of the processing chamber in the state shown in FIG. 6D (Dc) is the transport container 107, the processing chamber. Exhaust was performed from the exhaust port 125 until the pressure was substantially the same as that in the container 130.
And evaluation similar to Example 1 was performed and the result is shown in Table 3.

[Example 6]
In the procedure of Example 5, the position of the exhaust port provided in the gate valve of the processing chamber was changed as shown in Table 2, and other than that, 20 electrophotographic photoconductors were repeated 20 times in the same manner as in Example 5. Produced.
And evaluation similar to Example 1 was performed and the result is shown in Table 3.

[Example 7]
In the procedure of Example 5, the presence or absence of the shutter provided in the second gate valve of the processing chamber was changed as shown in Table 2, and the electrophotographic photosensitive member was continuously used 20 times in the same manner as in Example 5 except that. 20 were produced. Note that when exhaust is performed through the exhaust port 125, since the shutter is closed, the inside of the valve body retracting chamber 128 of the second gate valve of the processing chamber is not exhausted. And evaluation similar to Example 1 was performed and the result is shown in Table 3.

[Comparative Example 1]
In the procedure of Example 2, the number of valve bodies provided in the gate valve of the processing chamber, the procedure of the substrate carrying-in process, and the procedure of the carrying-out process of the substrate after forming the deposited film are changed as shown in Table 2, and the others In the same manner as in Example 2, 20 electrophotographic photoreceptors were produced 20 times in succession.
The procedure of the substrate carrying-in process was performed by changing the procedure of (Ac) to (Ai) of FIG. 5A to (b) to (h) of FIG.

The procedure for carrying out the substrate after forming the deposited film was performed by changing the procedures (Bc) to (Bk) in FIG. 6B to (b) to (i) in FIG.
In FIG. 7, in the state shown in FIG. 7B, the space closed by the valve body 2001 of the transfer machine and the valve body 2002 of the processing chamber is substantially the same pressure as the inside of the transfer container 2003 and the processing container 2004. Until exhaust gas was exhausted from the exhaust port 2005.

In FIG. 8, the space closed by the valve body 5001 of the transfer machine and the valve body 5002 of the processing chamber in the state shown in FIG. 8B is substantially the same pressure as the inside of the transfer container 5003 and the processing container 5004. Until it became, it exhausted from the exhaust port 5005.
And evaluation similar to Example 1 was performed and the result is shown in Table 3.

[Comparative Example 2]
In the procedure of Comparative Example 1, only the point using a deposited film forming apparatus 600 provided with a lid 601 covering the upper surface of the valve body of the gate valve provided in the processing chamber as shown in FIG. Except for the above, 20 electrophotographic photoreceptors were produced 20 times in the same manner as in Comparative Example 1.
Note that when the transporter and the processing chamber are connected, the operator removes the lid 601 and, after the transporter and the processing chamber are separated, the electrophotographic photosensitive member is used by a method in which the worker covers the lid 601. The body was made. And evaluation similar to Example 1 was performed and the result is shown in Table 3.

[Comparative Example 3]
In the procedure of Example 2, the procedure of the substrate carrying-in process and the procedure of the substrate carrying-out process after the formation of the deposited film are changed as shown in Table 2, and other than that, the electrophotographic photoreceptor 20 is changed in the same manner as in Example 2. Twenty pieces were produced continuously.
As for the procedure of the substrate carrying-in process, the procedure of (Aa) to (Ac) in FIG. 5A is changed from (Aa) to (Ab) in FIG. 9A and (Ag) to (Ag) in FIG. The procedure of (Ai) was changed to (Af) to (Ah) in FIG. 9A.

The steps of carrying out the substrate after forming the deposited film are the steps (Ba) to (Bd) in FIG. 6B, the steps (B) to (c) in FIG. ) To (Bk) were changed to (i) in FIG.
In FIG. 9A, in the state shown in FIG. 9A (A-b), the space closed by the valve body 3001 of the transporter and the first valve body 3002 of the processing chamber is the transport container 3003 and the processing container 3004. Exhaust was performed from the exhaust port 3005 until the pressure was substantially the same as the inside.

In FIG. 10, in the state shown in FIG. 10B, the space closed by the valve body 4001 of the transporter and the first valve body 4002 of the processing chamber is inside the transport container 4003 and the processing container 4004. Exhaust was performed from the exhaust port 4005 until the pressure became substantially the same.
And evaluation similar to Example 1 was performed and the result is shown in Table 3.

[Comparative Example 4]
In the procedure of Example 2, the procedure of the substrate carrying-in process was changed as shown in Table 2, and 20 electrophotographic photosensitive members were produced 20 times in the same manner as in Example 2 except that.
The procedure of the substrate carrying-in step was performed by changing the procedure of (Ac) to (Ad) in FIG. 5A to (Bc) to (Bd) in FIG. 9B.
In FIG. 9B, in the state shown in FIG. 9B (Bc), the space closed by the valve body 3001 of the transporter and the second valve body 3006 of the processing chamber is the transport container 3003 and the processing container 3004. Exhaust was performed from the exhaust port 3005 until the pressure was substantially the same as the inside.
And evaluation similar to Example 1 was performed and the result is shown in Table 3.

[Comparative Example 5]
In the procedure of Example 2, the procedure of the substrate carrying-in process was changed as shown in Table 2, and 20 electrophotographic photosensitive members were produced 20 times in the same manner as in Example 2 except that.
The procedure of the substrate carrying-in step was performed by changing the procedure of (Ac) to (Ad) in FIG. 5A to (Cb) to (Cc) in FIG. 9C.
In FIG. 9C, in the state shown in FIG. 9C (Cb), the space closed by the valve body 3001 of the transporter and the first valve body 3002 of the processing chamber is the transport container 3003 and the processing container 3004. Exhaust was performed from the exhaust ports 3005 and 3007 until the pressure was substantially the same as the inside.
And evaluation similar to Example 1 was performed and the result is shown in Table 3.

From Table 3, the following became clear.
From a comparison between Example 3 and Comparative Examples 1, 2, 3, 4, and 5, it was confirmed that spherical protrusions were suppressed by satisfying the conditions of the present invention.
From Example 2 and Example 3, the following was confirmed in the case of the deposited film forming apparatus in which the substrate loading / unloading direction is the vertical direction and the transfer machine is connected to the processing chamber. The effect of suppressing the spherical protrusion is more remarkable in the configuration in which only the processing chamber has the first and second valve bodies than in the configuration in which only the transfer machine has the first and second valve bodies.

From Example 1 and Example 2, the operation of the valve body after moving the substrate on which the deposited film has been formed in the substrate unloading process into the transport machine is performed before the first valve body is fully closed. It was confirmed that the tact time can be shortened and the spherical protrusion is further suppressed by fully closing the valve body.
From Example 1 and Example 4, it is possible to further reduce the tact time by using independent transfer machines for loading the substrate and for unloading the substrate after forming the deposited film. It was confirmed that it was further suppressed.

From Example 4 and Example 5, both the processing chamber and the transfer machine have two valve bodies in series along the loading / unloading direction of the substrate in the gate valve, and each valve body of the gate valve is a condition of the present invention. It was confirmed that the spherical protrusions are further suppressed by performing the state and operation satisfying the above.
From Example 5 and Example 6, when exhausting the space closed by the valve body of the transporter and the first valve body of the processing chamber, by exhausting from the exhaust port provided in the valve body retracting chamber, It was confirmed that the spherical protrusion was further suppressed.
From Example 6 and Example 7, it was confirmed that spherical projections were further suppressed by providing a shutter on the second gate valve.

1000 ... Deposited film forming apparatus 1100 ... Processing chamber 1101 ... Processing vessel 1102 ... Gate valve 1103 ... Second gate valve 1104 ... First gate valve 1105 ... Second valve body 1106 ... 1 valve element 1107 ... base 1108 ... cathode electrode 1109 ... insulator 1110 ... top wall 1111 ... bottom wall 1112 ... cap 1113 ... base holder 1114 ... base holder holding means 1115 ... heater for heating 1116 ... Raw material gas introduction pipe 1117 ... Connection pipe 1118 ... Mixing device 1119 ... Raw material gas inlet valve 1120 ... Exhaust pipe 1121 ... Exhaust port 1122 ... Exhaust main valve 1123 ... Vacuum gauge 1124 ... Matching box 1125... High frequency power source 1126... Holding portion 1127... Exhaust port 1128. Passing chamber 1200 ‥‥ transporter 1201 ‥‥ gate valve 1203 ‥‥ base loading and unloading means 1204 ‥‥ carrying container 1205 ‥‥ holder 1206 ‥‥ rail

Claims (8)

A substrate carrying-in process in which a substrate is carried into the processing chamber from a transfer device in a vacuum atmosphere by a substrate carrying-in / out means, a step of forming a deposited film on the substrate in the processing chamber, and a processing chamber in a vacuum atmosphere A substrate unloading step of unloading the substrate after forming the deposited film from the carrier to the transfer device by the substrate unloading / unloading means,
The processing chamber has at least a processing container and a gate valve,
The transport machine has at least a transport container, a gate valve, and the substrate carry-in / out means,
The gate valve includes a base passage chamber through which the base passes and a valve body retraction chamber in which the valve body retreats,
In the deposited film forming method in which the processing chamber and the transfer device can be connected to each other through the gate valves.
At least one of the processing chamber or the transfer machine has two valve bodies in the gate valve in series along the carry-in / out direction of the substrate,
When the processing chamber has only one valve body, the valve body is the first valve body, and when the processing chamber has two valve bodies, the first valve body in order from the processing container side, A second valve body,
When the transport machine has only one valve body, the valve body is the first valve body, and when the transport machine has two valve bodies, the first valve body in order from the transport container side, A second valve body,
The substrate carrying-in process is formed by connecting the process chamber and the transfer machine via the gate valves, and connecting the process chamber gate valve and the transfer machine gate valve. An exhausting process for exhausting the space to be performed, and a carrying-in process for carrying in the substrate from the transfer machine to the processing chamber in a vacuum atmosphere by the substrate carrying-in / out means,
When the processing chamber and the transfer machine are not connected,
When the processing chamber has only one valve body, the first valve body is fully closed, and when the processing chamber has two valve bodies, at least the second valve body is fully closed. age,
When the transport machine has only one valve body, the first valve body is fully closed, and when the transport machine has two valve bodies, at least the second valve body is fully closed. age,
The method of forming a deposited film, wherein the exhausting step is performed with the first valve body fully closed and the second valve body fully open. In the step after moving the substrate after formation of the deposited film into the carrier using the substrate carry-in / out means in the substrate carry-out step,
2. The deposited film forming method according to claim 1, wherein the second valve body is fully closed before the first valve body is fully closed.   The carrier includes a substrate carry-in carrier and a substrate carry-out carrier independently. When the substrate is carried into the processing chamber, the substrate carrying carrier is used to remove the substrate from the processing chamber. 3. The deposited film forming method according to claim 1, wherein the substrate carrying-out transporter is used when carrying out the substrate after the treatment. 4.   4. The method according to claim 1, wherein both the processing chamber and the transfer machine have two valve bodies in the gate valve in series along a loading / unloading direction of the base body. 5. Deposited film forming method.   5. The deposited film forming method according to claim 1, wherein in the exhausting step, exhaust is performed from an exhaust port provided in the valve body retracting chamber. A processing chamber having at least a gate valve and a processing container and capable of forming a deposited film on the substrate;
A deposited film forming apparatus having at least a transfer machine having at least a gate valve, a transfer container, and a substrate transfer means;
The gate valve has a base passage chamber through which the base passes and a valve body retracting chamber in which the valve body retracts;
The processing chamber and the transfer device can be connected to and disconnected from each other via the gate valves, and the substrate loading / unloading means allows the substrate to be loaded and unloaded between the processing chamber and the transfer device in a vacuum atmosphere. Can be done in,
The deposited film forming apparatus, wherein at least one of the processing chamber and the transporter has two valve bodies in the gate valve in series along a loading / unloading direction of the substrate.   The deposited film forming apparatus according to claim 6, wherein both the processing chamber and the transfer machine have two valve bodies in series in the gate valve along a loading / unloading direction of the substrate.   The deposited film forming apparatus according to claim 6, wherein an exhaust port is provided in the valve body retracting chamber.

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