JP5522010B2 - Power module and power converter - Google Patents

Description

  The present invention relates to a power module constituting a power converter.

In a conventional power conversion device, for example, four rectifying elements are connected in a bridge so that the negative polarity side rectifying element of a single-phase AC input rectifier circuit having an AC input and a DC output has a reverse polarity. In addition, there is a half-bridge single-phase converter circuit in which a semiconductor switch element is provided, and a reactor is connected to an AC input terminal of a single-phase AC input rectifier circuit (see, for example, Patent Document 1).
In this system, the positive half wave and negative half wave of the AC power supply are alternately energized to the two semiconductor switch elements, so that there is no loss concentration in one semiconductor switch element and the number of parts is small. There are advantages such as simple configuration. However, since the upper limit of the switching frequency is determined by the performance of the semiconductor switch element, it is difficult to increase the frequency, and it is difficult to reduce the size accordingly.

Further, as another type of power conversion device, one end of a reactor is connected to the positive electrode of a single-phase AC input rectifier circuit configured by bridging four rectifier elements and having an AC input and a DC output. A semiconductor switch element is connected between the terminal and the negative electrode of the single-phase AC input rectifier circuit, and is connected to a connection point between the reactor and the semiconductor switch element to prevent a current flowing back to the semiconductor switch element side when the semiconductor switch element is switched. There is a DC chopper type single-phase converter circuit in which a rectifying element is connected in the direction.
Further, in this circuit, a plurality of reactors and a plurality of rectifying elements that block reversely with the semiconductor switch elements connected to the reactor can be provided in parallel, and interleave control for alternately switching the semiconductor switch elements can be performed (for example, Patent Document 2). reference).
Further, in the interleave control, a current critical mode is known in which the semiconductor switch element is turned on when the current flowing through the reactor becomes zero (for example, Patent Document 3).
In any of the methods, even if the switching frequency per semiconductor switch element is low, the apparent switching frequency is doubled by alternately switching, and the reactor and the like can be made small, so that miniaturization is easy. However, since the two semiconductor switch elements are alternately switched, the control is complicated, the number of parts is increased, the cost is increased, the amount of noise generated by switching is increased, and the device is used in an environment where devices having no noise tolerance are mixed. It is unsuitable.

On the other hand, in a power converter, in order to reduce the mounting space of the semiconductor switch element and the diode element, a power module having these semiconductor elements as one package is used. However, the power module is preliminarily provided with a conductive wiring pattern inside the package. In addition to arranging the board, the semiconductor elements are mounted and arranged on the board, and the internal circuits are connected by connecting parts such as the semiconductor elements, wiring patterns, and connection terminals to the circuits outside the power module with conductive wires or direct soldering. In this configuration, the parts other than the connection terminals are directly sealed with an insulating resin material. Alternatively, a substrate on which each component is connected and an internal circuit is configured is housed in an exterior package, and the interior of the exterior package is sealed with an insulating resin material.
Therefore, when manufacturing a circuit with a different configuration, a built-in substrate that realizes a circuit with a different configuration is manufactured in advance, and the number and combination of semiconductor elements to be mounted on the substrate, wiring patterns, wire arrangement, etc. are changed. By producing a power module with a modified internal circuit for each configuration of the power converter, it is possible to obtain a power module that can configure a power converter with a different circuit configuration while sharing the substrate and package exterior built in the power module. It is known (see, for example, Patent Document 4).

JP 2001-286149 A (page 3-4, FIG. 1) JP-A-4-188206 (page 9, FIG. 11) Japanese Patent Laid-Open No. 10-127049 (pages 5-6 and 7-9) JP 2009-110981 A (pages 11-12 and 8-11)

  Since conventional power modules support power converters with different circuit configurations, even when the built-in board has a wiring pattern corresponding to a different power converter, the semiconductor element and the semiconductor element and the wiring pattern are Since the manufacturing is performed by changing the internal circuit by changing the arrangement of the conductive wires to be connected for each circuit configuration, there is a problem that the change of the manufacturing process is complicated and the manufacturing cost of the power module increases. In addition, the manufactured power module is equipped with elements with different operating characteristics, such as switching elements and rectifying elements, and the connections between these elements are determined. However, the connection between elements other than one type of circuit configuration cannot be changed, and there is a problem that it is very difficult to realize a configuration other than a predetermined circuit configuration.

  In addition, the half-bridge type single-phase converter circuit has the advantages of simple circuit, low loss and low cost, but it is difficult to increase the frequency, and the reactor cannot be downsized due to the increase in frequency. The disadvantage is that it is not suitable for small capacity circuits. On the other hand, a DC chopper type single-phase converter circuit that has multiple switching circuits in parallel and performs interleave control has the advantage that it can easily reduce the size of the reactor because it can increase the frequency, but it is possible to switch the switching circuits alternately to make the semiconductor There are disadvantages in that complex control is required to allow currents of equal distribution to flow through the switch elements, and that the amount of noise generated due to high frequency increases, making it unsuitable for large capacity circuits. Therefore, each circuit is difficult to integrate due to its advantages and disadvantages, and it is common to use each circuit in the right place, and it is necessary to produce several types of power modules according to the application. was there.

  The present invention has been made to solve the above-described problems, and includes a switching unit composed of a semiconductor element mounted therein and an element that performs switching operation without changing an internal circuit, and an element that performs rectification operation. It is an object to obtain a power module that can be freely connected to the rectifying unit configured in (1) and can configure a power conversion device having a different circuit configuration.

According to the present invention, a power module includes a first rectifier configured by a first rectifier and a second rectifier connected to each other on the current output side, a current input side of the first rectifier, The connected first connection terminal, the second connection terminal connected to the current input side of the second rectifier element, the third rectifier element and the fourth rectifier element connected to each other's current input side A second rectifier configured as described above; a third connection terminal connected to the current output side of the third rectifier element; a fourth connection terminal connected to the current output side of the fourth rectifier element; A first switching means connected to the first rectifying element of the first rectifying means, and a second switching means connected to the second rectifying element of the first rectifying means, constitute rectifying means at the second reverse recovery time than the rectifying means is shorter rectifying element, a first rectifier element 1 have lines coordinated switching the switching means, both the second rectifying element UTO second row coordinated switching the switching means, the negative electrode side circuit of the rectifier circuit the second rectifying means for rectifying the commercial power source the rectified output of the configured connected to the rectifier circuit commercial power source is intended been row Uyo Unishi.

According to the present invention, a power module includes a first rectifier configured by a first rectifier and a second rectifier connected to each other on the current output side, a current input side of the first rectifier, The connected first connection terminal, the second connection terminal connected to the current input side of the second rectifier element, the third rectifier element and the fourth rectifier element connected to each other's current input side A second rectifier configured as described above; a third connection terminal connected to the current output side of the third rectifier element; a fourth connection terminal connected to the current output side of the fourth rectifier element; , A first switching means connected to the first rectifying element, and a second switching means connected to the second rectifying element, wherein the first rectifying means has a reverse recovery time from the second rectifying means. It is constituted by a short rectifying element, a first rectifier element scan cooperation with the first switching means Gastric row etching, second rectifying elements together UTO line switching in cooperation with the second switching means, second rectifying means is connected to constitute a negative electrode side circuit of the rectifier circuit for rectifying the commercial power source rectifier circuit since the rectified output of the commercial power supply was rows Uyo Unishi was, first connection terminal without changing the semiconductor elements and the internal circuit mounted in the interior of the power module, the second connection terminal, the third connection terminal, with the fourth connection terminals can be configured externally freely different power conversion device circuit configured by connecting a power module, even when configuring the one of the power converter, the first rectifier means reverse current and It is possible to obtain a power module in which the oscillating current is reduced and an inexpensive rectifying element is used for the second rectifying means and the manufacturing cost is reduced .

It is a circuit block diagram of the power module in Embodiment 1 of this invention. It is a circuit block diagram of the half bridge type single phase converter circuit comprised using the power module in Embodiment 1 of this invention. 1 is a circuit configuration diagram of a DC chopper type single-phase converter circuit provided in parallel with a switching circuit configured using a power module according to Embodiment 1 of the present invention. FIG. It is a circuit block diagram of the power module in Embodiment 3 of this invention. It is a circuit block diagram of the half bridge type | mold converter circuit comprised using the power module in Embodiment 3 of this invention. It is a circuit block diagram of the direct current chopper type single phase converter circuit provided with the switching circuit comprised using the power module in Embodiment 3 of this invention in parallel. It is a circuit block diagram of the direct current chopper type | mold single phase converter circuit provided with the switching circuit in Embodiment 4 of this invention in parallel. It is a circuit block diagram of the power module in Embodiment 5 of this invention. It is a circuit block diagram of the half bridge type single phase converter circuit comprised using the power module of Embodiment 5 of this invention. It is a circuit block diagram of the direct current chopper type | mold single phase converter circuit provided with the switching circuit comprised using the power module of Embodiment 5 of this invention in parallel. It is another example of the circuit block diagram of the power module in Embodiment 5 of this invention. It is a circuit block diagram of the power module in Embodiment 6 of this invention. It is a circuit block diagram of the direct current chopper type | mold single phase converter circuit provided with the switching circuit in Embodiment 7 of this invention in parallel. It is a circuit block diagram of the power module in Embodiment 8 of this invention.

Embodiment 1 FIG.
1 is a circuit configuration diagram of a power module, FIG. 2 is a circuit configuration diagram of a half-bridge type single-phase converter circuit configured using the power module of FIG. 1, and FIG. 3 is an interleave control configured using the power module of FIG. FIG. 2 shows a circuit configuration diagram of a DC chopper type single-phase converter circuit provided with a switching circuit in parallel for performing

  In FIG. 1, a power module 1a includes rectifying elements, that is, diodes 11 to 14, semiconductor switching elements 21 and 22 as switching means, and a current detecting shunt resistor 31 as current detecting means. It is comprised by the connection terminals 101-108 for the external circuit connection connected with the internal wiring of the module 1a. However, the connection terminals 101 and 103 and the connection terminals 102 and 104 are connected inside the power module. The semiconductor switch elements 21 and 22 are bipolar transistors represented by, for example, insulated gate bipolar transistors.

  The cathode terminal of the diode 11 is connected to the connection terminal 101, the cathode terminal of the diode 12 is connected to the connection terminal 102, and one end of the current detection shunt resistor 31 is connected to the anode terminals of the diodes 11 and 12. The connection terminal 105 includes the anode terminal of the diode 13 and the collector terminal of the semiconductor switch element 21, the connection terminal 106 includes the anode terminal of the diode 14 and the collector terminal of the semiconductor switch element 22, and the connection terminal 107 includes the diodes 13 and 14. The cathode terminals are respectively connected, and the connection terminals 108 are connected to the emitter terminals of the semiconductor switch elements 21 and 22 and one end of the current detection shunt resistor 31 on the side not connected to the diodes 11 and 12. As a result, the power module 1a is provided with a circuit of a first diode group composed of diodes 11 and 12 and a circuit of a second diode group composed of diodes 13 and 14. .

  In the power module 1a, portions other than the connection terminals 101 to 108 are sealed with an insulating resin material (not shown) or the like to ensure insulation between each semiconductor chip inside the power module and the outside of the power module, Even if a conductive material comes into contact with the power module, each internal semiconductor chip is prevented from being energized or short-circuited. The connection between the power module 1a and the external circuit is performed via the connection terminals 101 to 108. The same applies to the following embodiments.

Next, a power converter configured using the power module 1a, that is, a power factor correction circuit will be described.
FIG. 2 shows a circuit configuration of a half-bridge type single-phase converter circuit, in which the connection terminals 103 and 105 and the connection terminals 104 and 106 of the power module 1a are connected, and the connection terminal 101 is connected to the commercial terminal (not shown) via the reactor 3. And the other end of the AC power supply is connected to the connection terminal 102. Since a rectified voltage is output between the connection terminals 107 and 108, a capacitor 4 or the like is connected, and the output is smoothed and converted to a DC voltage, and the DC voltage is driven to a DC load or an AC load. Connect and use a power conversion circuit to do this. The reactor 3 may be connected between the connection terminal 102 and the AC power supply instead of between the connection terminal 101 and the AC power supply. In the case of a common mode reactor including two reactors, one reactor of the common mode reactor is connected between the connection terminal 101 and the AC power supply, and the other reactor is connected between the connection terminal 102 and the AC power supply. To use.

  With such a connection, the power module 1a is configured such that the first rectification unit configured by the diodes 13 and 14 is the positive rectification unit, and the second rectification unit configured by the diodes 11 and 12 is the negative rectification unit. As described above, an AC rectification unit of a half-bridge single-phase converter circuit that rectifies the output of the AC power supply by connecting the positive rectification unit and the negative rectification unit outside the power module 1a can be configured.

  In the half-bridge type single-phase converter circuit configured as described above, the diodes 11 to 14 constitute a single-phase AC input rectifier circuit, and the semiconductor switch elements 21 and 22 are connected in parallel and opposite to the diodes 11 and 12, respectively. The semiconductor switching elements 21 and 22 are controlled based on the control method of the half-bridge type single-phase converter circuit based on the current detection result by the current detection shunt resistor 31, and the power factor of the AC power source is improved and the DC after rectification is controlled. Control voltage etc.

  FIG. 3 shows a circuit configuration of a DC chopper type single-phase converter circuit provided with a switching circuit in parallel, the connection terminal 103 of the power module 1a and the connection terminal 201 of the diode module 2, and the connection terminal 104 and the diode of the power module 1a. Each of the connection terminals 202 of the module 2 is connected, one end of each of the reactors 3a and 3b is connected to the connection terminal 203 of the diode module 2, and the other end of the reactor 3a is connected to the connection terminal 105 and the other end of the reactor 3b is connected. One end is connected to the connection terminal 106 and configured. Note that an AC power supply (not shown) is connected to the connection terminals 101 and 102. The diode module 2 includes diodes 41 and 42. The cathode terminals of the diodes 41 and 42 are connected to the connection terminal 203. The anode terminal of the diode 41 is connected to the connection terminal 201. The anode terminal of the diode 42 is connected to the connection terminal 202. It is a connected module. As a result, a rectified voltage is output between the connection terminals 107 and 108. Therefore, the capacitor 4 or the like is connected, the output is smoothed and converted to a DC voltage, and the DC voltage is converted to a DC load or AC. Connect and use a power conversion circuit to drive the load. Note that the circuit may be configured by using two single diodes instead of the diode module 2.

  With such a connection, the power module 1a is configured such that the second rectification unit of the power module 1a configured by the diodes 11 and 12 is the negative rectification unit, the diode module 2 is the positive rectification unit, and the negative rectification unit. The first rectifier of the power module 1a configured by the diodes 13 and 14 can be configured as an AC rectifier of a DC chopper type single-phase converter circuit that rectifies the output of the AC power supply by connecting the positive rectifier. Is connected in series to the semiconductor switch elements 21 and 22, and operates in a coordinated manner when the semiconductor switch elements 21 and 22 are switched to perform switching and block a current flowing back to the semiconductor switch elements 21 and 22 side. It can be configured as a DC rectifying unit.

  In the DC chopper type single-phase converter circuit thus configured, the diodes 11 and 12 and the diodes 41 and 42 of the diode module 2 constitute a single-phase AC input rectifier circuit, and the semiconductor switch elements 21 and 22 are AC power sources. The switching circuits that perform power factor improvement and control of the DC voltage after rectification, and the diodes 13 and 14 become switching diodes that perform switching in coordination with the switching operation of the semiconductor switch elements 21 and 22. Therefore, the semiconductor switch elements 21 and 22 are controlled based on the current detection result by the current detection shunt resistor 31 based on the interleave control method, and the power factor of the AC power source is improved and the DC voltage after rectification is controlled.

  In FIG. 1, FIG. 2 and FIG. 3, for example, a bipolar transistor represented by an insulated gate bipolar transistor is used as the semiconductor switch elements 21 and 22, but a field effect type represented by a MOSFET, for example. A transistor may be used. In this case, the above-described collector terminal is read as a source terminal, and the emitter terminal is read as a drain terminal. The same applies to the following embodiments.

  Thus, by adding the diode module 2 and the reactors 3, 3a, 3b as external circuits, the power module 1a is a DC chopper type single-phase converter circuit having a half-bridge type single-phase converter circuit and a switching circuit in parallel. It can be applied to both.

In summary, the power module 1a is provided with the first rectification means and the second rectification means independently in the power module 1a, so that the first rectification means is the positive rectification unit and the second rectification means. A rectifier is used as a negative rectifier, and a positive rectifier and a negative rectifier are connected to form an AC rectifier, thereby forming a half-bridge single-phase converter circuit, or a second rectifier as a negative rectifier. A rectifying unit is connected to the negative rectifying unit and an external diode module to form an AC rectifying unit, and the first rectifying means and the semiconductor switch element are connected to perform switching in cooperation with the switching operation of the semiconductor switch element and back flow A DC chopper type single-phase converter circuit can be configured as a DC rectifying unit for blocking current.
That is, the first rectifying means of the power module 1a can be configured as an AC rectifying unit or a DC rectifying unit.

  Therefore, the power module 1a can be used for both the circuit configuration of the half-bridge type single-phase converter circuit and the circuit configuration of the DC chopper type single-phase converter circuit provided with the switching circuit in parallel. That is, the same power module can be used for single-phase power factor correction circuits having different circuit configurations, and the power modules can be shared. Therefore, it is possible to manufacture a power module that can be used in a power factor correction circuit having a different circuit configuration, that is, a power conversion device, without changing the manufacturing process of the power module, and the manufacturing cost of the power module can be suppressed.

  Accordingly, useless work such as changeover of manufacturing corresponding to different circuit configurations at the time of manufacturing can be reduced, and manufacturing costs can be reduced. Also, even power modules manufactured for half-bridge type single-phase converter circuits can be used to manufacture DC chopper type single-phase converter circuits, and power modules manufactured for DC chopper-type single-phase converter circuits. Even so, it can be used to manufacture a half-bridge type single-phase converter circuit, which eliminates manufacturing waste, increases production efficiency, and eliminates waste such as distribution and storage.

2 and 3, since the operation and necessary characteristics of the diodes 11 to 14 of the power module 1a are different, it is desirable to use a diode corresponding to the characteristics.
For example, if the diodes 11 and 12 are soft recovery diodes (SRD) having a long reverse recovery time and the diodes 13 and 14 are fast recovery diodes (FRD) having a short reverse recovery time, the half-bridge single-phase converter circuit of FIG. The DC chopper type single-phase converter circuit provided with the switching circuit of FIG. 3 in parallel can also have a circuit configuration that exhibits the characteristics of the soft recovery diode and the fast recovery diode.

  When a diode suddenly changes from a forward bias state in which a forward current flows by applying a voltage in the forward direction from the anode to the cathode, a reverse bias state in which a current is blocked by applying a voltage in the reverse direction, the diode temporarily changes impedance. A reverse recovery period appears in which zero occurs, and during that period, a reverse current that should not flow due to reverse bias flows and a loss occurs in the diode, but the diode also vibrates due to resonance of the inductance component and capacitance component inside the diode. Current may flow. That is, it becomes a recovery loss of the diode. When a diode with a long reverse recovery time is used for a diode whose bias switching occurs at high speed and frequently due to the switching operation of the semiconductor switch element, not only does the reverse current flow longer, the loss increases, but also the internal inductance component of the diode Further, since large energy is accumulated in the capacitance component, the oscillating current also increases, and an overvoltage and a thermal load are applied to the semiconductor switch element and the diode, which causes the semiconductor element to be destroyed. Therefore, a fast recovery diode having a short reverse recovery time is generally applied to such a diode. On the other hand, in general, the cost of components of the fast recovery diode is higher than that of the soft recovery diode, and the manufacturing cost increases if the fast recovery diode is used frequently.

In contrast, the operation of the circuit configuration of the half-bridge single-phase converter circuit of FIG. 2 will be described. When the AC voltage of the AC power source is a positive half wave, that is, when a positive voltage is applied to the connection terminal 101 via the reactor 3 and a negative voltage is applied to the connection terminal 102, the reactor 3 is turned on when the semiconductor switch element 21 is turned on. Via the connection terminal 101, the semiconductor switch element 21, the current detection shunt resistor 31, and the diode 12 from the AC power source, a current flows through the path from the connection terminal 102 to the AC power source, and energy is accumulated in the reactor 3. When the semiconductor switch element 21 is turned off in this state, the AC power source passes through the reactor 3 from the AC power source through the connection terminal 102, the diode 13, the capacitor 4, the current detecting shunt resistor 31, and the diode 12, and returns from the connection terminal 102 to the AC power source. The path current flows, and the energy stored in the reactor 3 is charged in the capacitor 4.
That is, the diode 12 functions as a rectifying diode that rectifies the AC power supply regardless of whether the semiconductor switch element 21 is on or off. On the other hand, when the semiconductor switch element 21 is off, the diode 13 is in a forward bias state in which a voltage is applied from the AC power source to the capacitor 4, that is, from the anode terminal to the cathode terminal of the diode 13. When the element 21 is on, a reverse bias state is applied in which a voltage is applied from the capacitor 4 to the semiconductor switch element 21, that is, from the cathode terminal to the anode terminal of the diode 13. The diode 13 serves as a switching diode that prevents current from flowing. Function.

Similarly, when the AC voltage of the AC power source is a negative half wave, that is, when a negative voltage is applied to the connection terminal 101 via the reactor 3 and a positive voltage is applied to the connection terminal 102, the semiconductor switch element 22 is turned on. A current flows from the AC power source through the connection terminal 102, the semiconductor switch element 22, the current detecting shunt resistor 31, and the diode 11, and returns from the connection terminal 101 to the AC power source via the reactor 3, and energy is accumulated in the reactor 3. The In this state, when the semiconductor switch element 22 is turned off, a current flows from the AC power source through the connection terminal 102, the diode 14, the capacitor 4, the current detection shunt resistor 31, and the diode 11 and returns from the connection terminal 101 to the AC power source. The energy accumulated in the reactor 3 is charged in the capacitor 4.
That is, the diode 11 functions as a rectifying diode that rectifies the AC power supply regardless of whether the semiconductor switch element 21 is on or off, like the diode 12, and the diode 14 is forward-biased when the semiconductor switch element 21 is on or off, like the diode 13. Switching between the state and the reverse bias state, the diode 14 functions as a switching diode for passing or blocking current.

  By repeating this operation of turning on or off the semiconductor switch element 21 or 22, the energy storage in the reactor 3 and the charging from the reactor 3 to the capacitor 4 are repeated, and the voltage across the capacitor, that is, the output voltage of the half-bridge type single-phase converter circuit Is raised from the voltage when the AC voltage is rectified and smoothed.

  Note that the step-up rate to be boosted varies depending on the operation cycle in which the semiconductor switch elements 21 and 22 are turned on, that is, the switching frequency and the energy storage capability of the reactor 3, that is, the reactor capacity. In other words, if the same step-up rate is used, if the switching frequency is increased, the energy storage capability by a single switching operation of the reactor 3 can be reduced, so that the reactor capacity can be reduced. Of course, if the switching frequency is low, the reactor capacity needs to be increased. On the other hand, by increasing the switching frequency, the bias switching of the diodes 13 and 14 is also accelerated, and the backflow current in the switching operation is also increased.

  When the AC voltage of the AC power supply is a positive half wave, the current path is not affected even if the semiconductor switch element 22 is turned on and off. When the AC voltage of the AC power supply is a negative half wave, the semiconductor switch Even if the element 21 is turned on / off, the current path is not affected. Therefore, the semiconductor switch elements 21 and 22 may both be turned on / off regardless of whether the AC voltage of the AC power supply is a positive half wave or a negative half wave.

  Further, when the semiconductor switch element 21 or 22 is turned on, the input current increases due to energy storage in the reactor 3, and when the semiconductor switch element 21 or 22 is turned off, the input current decreases due to energy charging from the reactor 3 to the capacitor 4. . By controlling this, the power factor of the AC power supply is improved by controlling the input current to a sine wave in phase with the AC voltage of the AC power supply. That is, the power factor of the AC power supply is brought close to 1.

  In order to approximate the input current to a sine wave, it is necessary to reduce the rise and fall width of the input current when the semiconductor switch element 21 or 22 is turned on, that is, the ripple, but the semiconductor switch elements 21 and 22 are turned on and off. The ripple of the input current can be reduced by increasing the operating cycle, that is, the switching frequency. On the other hand, by increasing the switching frequency, the bias switching of the diodes 13 and 14 is also accelerated, and the backflow current in the switching operation is also increased.

  Similarly, the operation of the circuit configuration of a DC chopper type single-phase converter circuit provided with the switching circuit of FIG. 3 in parallel will be described. When the semiconductor switch element 21 is turned on, it passes through the reactor 3a, the semiconductor switch element 21, and the current detecting shunt resistor 31 via the connection terminal 101, the diode 41 or the connection terminal 102, and the diode 42 from the AC power source, and then the diode 11 and the connection terminal. A current flows in a path from 101, the diode 12, and the connection terminal 102 back to the AC power source, and energy is accumulated in the reactor 3a. Next, when the semiconductor switch element 21 is turned off, the AC power source passes through the connection terminal 101, the diode 41 or the connection terminal 102, the diode 42, the reactor 3a, the diode 13, the capacitor 4, and the current detecting shunt resistor 31, and then the diode. 11, current flows through a path from the connection terminal 101 or the diode 12 and the connection terminal 102 back to the AC power source, and the energy accumulated in the reactor 3a is charged in the capacitor 4.

  Similarly, when the semiconductor switch element 22 is turned on, the AC power source passes through the connection terminal 101, the diode 41 or the connection terminal 102, the diode 42, the reactor 3b, the semiconductor switch element 22, and the current detection shunt resistor 31, and the diode 11 The current flows through the connection terminal 101 or the diode 12 and the path returning from the connection terminal 102 to the AC power source, and energy is stored in the reactor 3b. Next, when the semiconductor switch element 22 is turned off, the AC power source passes through the connection terminal 101, the diode 41 or the connection terminal 102, the diode 42, the reactor 3b, the diode 14, the capacitor 4, and the current detection shunt resistor 31, and then the diode. 11, current flows through a path from the connection terminal 101 or the diode 12 and the connection terminal 102 back to the AC power supply, and the energy accumulated in the reactor 3b is charged in the capacitor 4.

  From the above operation, the diodes 11, 12, 41, and 42 function as rectifying diodes that rectify the AC power supply regardless of whether the semiconductor switch element 21 is on or off. On the other hand, when the semiconductor switch element 21 is off, the diode 13 is in a forward bias state in which a voltage is applied from the AC power source to the capacitor 4, that is, from the anode terminal to the cathode terminal of the diode 13. When the element 21 is on, a reverse bias state is applied in which a voltage is applied from the capacitor 4 to the semiconductor switch element 21, that is, from the cathode terminal to the anode terminal of the diode 13, and the diode 13 functions as a switching diode that prevents current from flowing. To do. Similarly, the diode 14 switches between the forward bias state and the reverse bias state when the semiconductor switch element 22 is turned on and off, and the diode 14 functions as a switching diode for passing or blocking current.

  Further, the output voltage of the DC chopper type single-phase converter circuit is boosted from the voltage obtained when the AC voltage is rectified and smoothed by repeating the ON / OFF operation of the semiconductor switch elements 21 and 22, as in the single-phase half-bridge type converter circuit. The step-up rate is also determined by the switching frequency and the reactor capacity. If the same step-up rate is used, the reactor capacity can be reduced if the switching frequency is increased. However, the bias switching of the diodes 13 and 14 is also speeded up, and the backflow current in the switching operation increases. It will be.

  Similarly to the half-bridge single-phase converter circuit, the method of improving the power factor of the AC power supply is the same as the AC voltage of the AC power supply by increasing or decreasing the input current from the AC power supply by turning on and off the semiconductor switch elements 21 and 22. The power factor of the AC power supply is improved by controlling the phase to a sine wave. Therefore, although the ripple of the input current can be reduced by increasing the switching frequency, the bias switching of the diodes 13 and 14 is also speeded up and the backflow current in the switching operation is increased.

  Note that in a DC chopper type single-phase converter circuit provided with switching circuits in parallel, switching control in which the phase at which the semiconductor switch element 21 is turned on and off and the phase at which the semiconductor switch element 22 is turned on / off, that is, interleave control, can also be performed. Timing control is performed such that when the semiconductor switch element 21 is turned on, the semiconductor switch element 22 is turned off, and when the semiconductor switch element 21 is turned off, the semiconductor switch element 22 is turned on, and a current is alternately supplied to the semiconductor switch elements 21 and 22. Thus, the circuit as a whole can pass twice as much current as one semiconductor switch element. Here, since there are two semiconductor switch elements, the current is doubled. However, when the number of semiconductor switch elements is three, the current can be controlled three times and when the number is four, the current can be increased four times.

  In the configuration of FIG. 3, it is not always necessary to perform the interleave control, and the semiconductor switch elements 21 and 22 may be simultaneously turned on. Further, the control may be such that the semiconductor switch element 21 is switched and the semiconductor switch element 22 is deactivated. Also, the semiconductor switch element to be switched and the semiconductor switch element to be paused may be reversed, or switching and pause may be switched depending on time, the temperature of the semiconductor switch element, or the like.

  Further, in the DC chopper type single-phase converter circuit having the half-bridge type single-phase converter circuit of FIG. 2 and the switching circuit of FIG. 3 in parallel, the semiconductor switch elements 21 and 22 are controlled to be turned on and off at a constant frequency. Continuous current mode switching control is performed to turn on the semiconductor switch element 21 or 22 before 21 or 22 is turned off and the current of the reactor 3 or 3a, 3b becomes zero. When the current continuous mode type switching control is performed, the difference in bias voltage at the time of bias switching of the diodes 13 and 14 also increases, so that the backflow current also appears remarkably. On the other hand, current critical mode type switching control for turning on the semiconductor switch element 21 or 22 at the same time that the current flowing through the reactor 3 or 3a or 3b becomes zero in order to reduce the backflow current can be performed.

Further, with the circuit configuration and control as described above, in the half-bridge single-phase converter circuit, the two semiconductor switch elements are alternately energized by the positive half wave and the negative half wave of the AC power supply. There is an advantage that the circuit configuration can be simplified because the loss is not concentrated on one piece and the number of parts is small. Therefore, a high-power circuit serving as a large current / high voltage input / output can be realized relatively easily, and the loss / heat generation is distributed compared to other systems, resulting in a more efficient circuit. However, since the upper limit of the switching frequency is determined by the performance of the semiconductor switch element, it is difficult to increase the frequency, and it is difficult to downsize the reactor. Therefore, since it is larger than a circuit system having the same capacity, there is a disadvantage that it is not suitable for a circuit with a small capacity.
In addition, a DC chopper type single-phase converter circuit equipped with switching circuits in parallel can perform interleave control, so that even if the switching frequency per semiconductor switch element is low, the apparent switching frequency is doubled by switching alternately. Thus, the reactor can be made smaller. Accordingly, there is an advantage that the circuit can be easily downsized. However, it is necessary to perform control that switches two semiconductor switch elements alternately and control that balances the flow of current evenly to each switching circuit. For example, the control itself is complicated and the number of parts increases. Up. In addition, since the amount of noise generated due to high frequency cannot be suppressed, it is not suitable for increasing the capacity of an environment where there is a device with low noise immunity or the circuit itself as a high current / high voltage input / output. There are disadvantages.
Therefore, the circuit is difficult to integrate due to its strengths and weaknesses, and since each circuit is used in the right place for the right material, many types of power modules have been manufactured to suit the application, but the power module 1a in FIG. Since one type of power module can be configured as a half-bridge type single-phase converter circuit or a direct current chopper type single-phase converter circuit, it is possible to configure a circuit for a small capacity to a large capacity. That is, the circuit designer has selected a module according to the application, but any circuit can be designed freely. Further, since the power module manufacturing side only needs to manufacture and produce one type of module, production management is easy.

  In summary, the diodes 11 and 12, which are the circuits of the first diode group of the power module 1a, are arranged in parallel with the switching circuit of FIG. 3 in the configuration of the half-bridge single-phase converter circuit of FIG. Also in the configuration of the chopper type single-phase converter circuit, it functions as a rectifying diode of a single-phase AC input rectifier circuit that rectifies the voltage and current of the AC power supply. Therefore, the diodes 11 and 12 do not undergo high-speed bias switching due to the switching operation of the semiconductor switch element, and even if the soft recovery diode has a long reverse recovery time, loss due to reverse current and increase in oscillation current do not occur.

  On the other hand, the diodes 13 and 14 which are the circuits of the second diode group of the power module 1a are semiconductors in addition to the function as a rectifying diode of the single-phase AC input rectifier circuit in the configuration of the half-bridge single-phase converter circuit of FIG. The switching elements 21 and 22 function as switching diodes or recovery diodes, and the DC chopper type single-phase converter circuit having the switching circuit of FIG. 3 in parallel also functions as the recovery diodes of the semiconductor switching elements 21 and 22. To do. When the semiconductor switch elements 21 and 22 are turned on, high-speed bias switching occurs. Therefore, it is appropriate to use a fast recovery diode in order to reduce a loss generated by the backflow current of the diodes 13 and 14 and an oscillation current. .

  Therefore, by applying a soft recovery diode having a low component cost to the diodes 11 and 12 that are the circuits of the first diode group of the power module 1a, the manufacturing cost of the power module 1a as a whole can be reduced, and the power module 1a By applying a fast recovery diode that reduces the loss and the oscillating current to the diodes 13 and 14 that are the circuits of the second diode group, the power converter to which the power module 1a is applied, that is, the power that incorporates the power converter is built-in. While reducing the energy consumption of an apparatus, the manufacturing cost of an electric power converter or an electric equipment can be reduced by miniaturizing and simplifying the radiator and the protection circuit of the electric power converter.

  As described above, the power module 1a applies the soft recovery diode to the diodes 11 and 12 that are the circuits of the first diode group, and the fast recovery diode to the diodes 13 and 14 that are the circuits of the second diode group. The power conversion device to which the power module 1a is applied, and thus the energy consumption of the electric equipment incorporating the power conversion device is reduced, and the power module 1a and the power conversion device to which the power conversion device is applied or the radiator and protection circuit of the electric equipment are provided. Manufacturing costs can be reduced by downsizing and simplification.

  In addition, a single power module can be used to configure a circuit for a small capacity to a large capacity, and the circuit designer can design a free circuit without having to select a module according to the application. In addition, the manufacturing side of the power module can also contribute to restraining manufacturing costs by reducing unnecessary work such as changeover of manufacturing corresponding to different circuit configurations at the time of manufacturing. Also, even power modules manufactured for half-bridge type single-phase converter circuits can be used to manufacture DC chopper type single-phase converter circuits, and power modules manufactured for DC chopper-type single-phase converter circuits. Even so, it can be used to manufacture a half-bridge type single-phase converter circuit, which eliminates manufacturing waste, increases production efficiency, and eliminates waste such as distribution and storage. Production management is easy because only one type of module needs to be manufactured and produced.

  The control circuit capable of realizing the above control may be built in the power module 1a or mounted outside the power module 1a.

Embodiment 2. FIG.
Next, an example of a power module having a circuit configuration different from that in FIG. 1 in the module but capable of configuring the same power factor correction circuit as in FIGS.
4 is a circuit configuration diagram of the power module, FIG. 5 is a circuit configuration diagram of a half-bridge type single-phase converter circuit configured using the power module of FIG. 4, and FIG. 6 is a switching circuit configured using the power module of FIG. Is a circuit configuration diagram of a direct current chopper type single-phase converter circuit provided in parallel with each other.

  In FIG. 4, a power module 1b incorporates rectifying elements, that is, diodes 11 to 14, semiconductor switching elements 21 and 22 as switching means, and a current detecting shunt resistor 31 as current detecting means. It is composed of connection terminals 101 to 106, 108 and 117 for connecting an external circuit connected by internal wiring of the module 1a. The connection terminals 101 and 103 and the connection terminals 102 and 104 are connected inside the power module.

  The connection terminal 101 includes the cathode terminal of the diode 11 and the anode terminal of the diode 13, the connection terminal 102 includes the cathode terminal of the diode 12 and the anode terminal of the diode 14, and the connection terminal 117 includes the cathode terminals of the diodes 13 and 14. Are connected, and one end of a current detecting shunt resistor 31 is connected to the anode terminals of the diodes 11 and 12. The collector terminal of the semiconductor switch element 21 is connected to the connection terminal 105, the collector terminal of the semiconductor switch element 22 is connected to the connection terminal 106, and the emitter terminals of the semiconductor switch elements 21 and 22 and the current detection shunt are connected to the connection terminal 108. One end of the resistor 31 that is not connected to the diodes 11 and 12 is connected. Thus, the power module 1b is provided with a single-phase AC input rectifier circuit configured by the diodes 11 to 14, and the semiconductor switch elements 21 and 22 are provided independently of the single-phase AC input rectifier circuit. .

  Similarly to the power module 1a, the power module 1b also seals the portions other than the connection terminals 101 to 106, 108, and 117 with an insulating resin material (not shown) or the like so that each semiconductor chip inside the module is connected to the outside of the module. Insulation is ensured so that even if a conductive material comes into contact with the outside of the module, each semiconductor chip inside is not energized or short-circuited. Therefore, the connection between the power module 1b and the external circuit is performed via the connection terminals 101 to 106, 108, and 117. The same applies to the following embodiments.

Next, a power converter configured using the power module 1b, that is, a power factor correction circuit will be described.
FIG. 5 shows a circuit configuration of a half-bridge type single-phase converter circuit in which the connection terminals 103 and 105 and the connection terminals 104 and 106 of the power module 1b are connected, and a commercial terminal (not shown) is connected to the connection terminal 101 via the reactor 3. And the other end of the AC power supply is connected to the connection terminal 102. Since a rectified voltage is output between the connection terminals 117 and 108, a capacitor 4 or the like is connected, the output is smoothed and converted to a DC voltage, and the DC voltage is driven to a DC load or an AC load. Connect and use a power conversion circuit to do this. As in FIG. 2, the reactor 3 may be connected between the connection terminal 102 and the AC power supply instead of between the connection terminal 101 and the AC power supply. In the case of a common mode reactor constituted by two reactors, One of the common mode reactors is connected between the connection terminal 101 and the AC power supply, and the other reactor is connected between the connection terminal 102 and the AC power supply.

  In the half-bridge type single-phase converter circuit configured as described above, the diodes 11 to 14 are single-phase AC input rectifier circuits, and the semiconductor switch elements 21 and 22 are connected to the diodes 11 and 12 in parallel and of opposite polarity, respectively. . Therefore, the semiconductor switch elements 21 and 22 are controlled based on the control method of the half-bridge type single-phase converter circuit based on the current detection result by the current detection shunt resistor 31, and the power factor of the AC power source is improved and the rectified DC is supplied. Control voltage etc.

  FIG. 6 shows a circuit configuration of a DC chopper type single-phase converter circuit provided with a switching circuit in parallel. The connection terminal 117 of the power module 1a is connected to one end of the reactor 3a and one end of the reactor 3b at the same time. One end is connected to the connection terminal 201 of the diode module 2, and the other end of the reactor 3 b is connected to the connection terminal 202 of the diode module 2. Note that an AC power supply (not shown) is connected to the connection terminals 101 and 102. The diode module 2 includes diodes 41 and 42. The cathode terminals of the diodes 41 and 42 are connected to the connection terminal 203. The anode terminal of the diode 41 is connected to the connection terminal 201. The anode terminal of the diode 42 is connected to the connection terminal 202. It is a connected module. As a result, a rectified voltage is output between the connection terminals 203 and 108. Therefore, the capacitor 4 or the like is connected, the output is smoothed and converted to a DC voltage, and the DC voltage is converted to a DC load or an AC load. A power conversion circuit for driving the battery is connected and used. Note that the circuit may be configured by using two single diodes instead of the diode module 2.

  In the DC chopper type single-phase converter circuit including the switching circuit configured in this way in parallel, the diodes 11 to 14 constitute a single-phase AC input rectifier circuit, and the semiconductor switch elements 21 and 22 are the power factor of the AC power supply. The switching circuit for controlling the DC voltage after improvement and rectification, the diodes 41 and 42 of the diode module 2, serve as switching diodes for the semiconductor switch elements 21 and 22. Therefore, the semiconductor switch elements 21 and 22 are controlled based on the current detection result by the current detection shunt resistor 31 based on the interleave control method, and the power factor of the AC power source is improved and the DC voltage after rectification is controlled.

  1 to 3, the semiconductor switch elements 21 and 22 may be bipolar transistors or field effect transistors in FIGS. 4, 5, and 6. In the case of a field effect transistor, the collector terminal is read as the source terminal, and the emitter terminal is read as the drain terminal. The same applies to the following embodiments.

  Thus, by adding the diode module 2 and the reactors 3, 3a, 3b as external circuits, the power module 1b is a DC chopper type single phase converter circuit having a half bridge type single phase converter circuit and a switching circuit in parallel. It can be applied to both.

  As described above, the power module 1b can be used for both the circuit configuration of the half-bridge single-phase converter circuit and the circuit configuration of the DC chopper type single-phase converter circuit provided with the switching circuit in parallel. That is, the same power module can be used for single-phase power factor correction circuits having different circuit configurations, and the power modules can be shared. Therefore, it is possible to manufacture a power module that can be used in a power factor correction circuit having a different circuit configuration, that is, a power conversion device, without changing the manufacturing process of the power module, and the manufacturing cost of the power module can be suppressed.

  5 and 6, the diodes 11 to 14 of the power module 2a and the diode module 2 are different in the operation and necessary characteristics of the diodes 41 and 42, and therefore it is desirable to use diodes corresponding to the characteristics.

  In the case of the single-phase half-bridge type converter circuit of FIG. 5, since the operation is the same as that of FIG. 2, the diodes 11 and 12 function as rectifying diodes of the single-phase AC input rectifier circuit. A recovery diode may also be used. On the other hand, since the diodes 13 and 14 function as switching diodes for the semiconductor switch elements 21 and 22, it is appropriate to use fast recovery diodes to reduce loss and oscillation current.

  In the case of the DC chopper type single-phase converter circuit provided with the switching circuit of FIG. 6 in parallel, the operation is the same as in FIG. 3, and therefore the diodes 11 to 14 function as rectifying diodes of the single-phase AC input rectifier circuit. A soft recovery diode having a long reverse recovery time may be used. On the other hand, since the diodes 41 and 42 function as switching diodes for the semiconductor switch elements 21 and 22, it is appropriate to use fast recovery diodes to reduce loss and oscillation current.

  Therefore, when the soft recovery diode and the fast recovery diode are arranged in place in the power module 1b, they cannot be shared, but in the case of the half-bridge single-phase converter circuit of FIG. 5, the diodes 13 and 14 and the semiconductor switch element 21 , 22 can be embedded in the power module 1b, so that the respective semiconductor elements can be connected in the shortest time, the internal inductance component and the capacitance component can be suppressed as much as possible, and the oscillation current can be prevented from increasing. That is, a power module that suppresses noise generated from the module and is resistant to incoming noise can be obtained. In the case of the DC chopper type single-phase converter circuit of FIG. 6, the diodes 41 and 42 that need to be fast recovery diodes can be made independent of the power module 1b. It can be composed of diodes, simplifying the types of semiconductors handled in the production process, and improving production efficiency. That is, an inexpensive power module can be obtained.

  As described above, the power module 1b arranges the soft recovery diode and the fast recovery diode in place, thereby reducing the energy consumption of the power conversion device to which the power module 1b is applied, and hence the electric equipment incorporating the power conversion device. In addition to reducing the noise, it is possible to reduce the noise or the manufacturing cost of the power module 1b and the power conversion device or electric device to which the power module 1b is applied.

  The control circuit that can realize the above control may be built in the power module 1b or mounted outside the power module 1b.

Embodiment 3 FIG.
Next, an example of a power module including a semiconductor element constituting a three-phase output type voltage source inverter circuit in the DC output of the power module of FIG. 1 will be described.
7 is a circuit configuration diagram of the power module, FIG. 8 is a circuit configuration diagram of a half-bridge type single-phase converter circuit configured using the power module of FIG. 7, and FIG. 9 is a switching circuit configured using the power module of FIG. And FIG. 10 is a circuit configuration diagram of a power module having a configuration different from that of FIG. Generally, in a circuit in which a voltage-type inverter circuit is provided at the output of a half-bridge type single-phase converter circuit or a DC chopper type single-phase converter circuit as shown in FIG. 8 or FIG. 9, the half-bridge type single-phase converter circuit or DC chopper Type single-phase converter circuit converts AC power into DC and converts it to AC with a frequency and voltage different from the frequency and voltage of the AC power source again with the voltage source inverter circuit, and outputs it to the output of the voltage source inverter circuit The connected three-phase AC inductive load, that is, the motor is driven.

  In FIG. 7, a power module 1c incorporates diodes 11-14 and 61-66, semiconductor switch elements 21, 22 and 71-76, and a shunt resistor 31 for current detection. These elements and resistors and the inside of the power module 1a It is comprised by the connection terminals 101-111 for the external circuit connection connected by the wiring. The connection terminals 101 and 103 and the connection terminals 102 and 104 are connected inside the power module.

  The power module 1c has a circuit configuration in which a general three-phase output type voltage source inverter circuit is added to the circuit of the power module 1a. That is, the cathode terminal of the diode 11 is connected to the connection terminal 101, the cathode terminal of the diode 12 is connected to the connection terminal 102, and one end of the shunt resistor 31 for current detection is connected to the anode terminals of the diodes 11 and 12. . The connection terminal 105 includes the anode terminal of the diode 13 and the collector terminal of the semiconductor switch element 21, the connection terminal 106 includes the anode terminal of the diode 14 and the collector terminal of the semiconductor switch element 22, and the connection terminal 107 includes the diodes 13 and 14. The cathode terminals are respectively connected, and the connection terminals 108 are connected to the emitter terminals of the semiconductor switch elements 21 and 22 and one end of the current detection shunt resistor 31 on the side not connected to the diodes 11 and 12.

  The circuit composed of the diodes 61 to 66 and the semiconductor switch elements 71 to 76 is a general three-phase output voltage source inverter circuit. The connection terminal 107 includes the cathode terminals of the diodes 61 to 63 and the semiconductor switch elements 71 to 73. The collector terminals of the diodes 64 to 66 and the emitter terminals of the semiconductor switch elements 74 to 76 are connected to the connection terminal 108. The connection terminal 109 includes an anode terminal of the diode 61, a cathode terminal of the diode 64, an emitter terminal of the semiconductor switch element 71, and a collector terminal of the semiconductor switch element 74. The connection terminal 110 includes an anode terminal of the diode 62 and a diode 65. The cathode terminal, the emitter terminal of the semiconductor switch element 72, the collector terminal of the semiconductor switch element 75, the anode terminal of the diode 63, the cathode terminal of the diode 66, the emitter terminal of the semiconductor switch element 73, the semiconductor switch element 76 Collector terminals are connected to each other.

  FIG. 8 shows an example of a circuit for driving an inductive load using the power module 1c, in which a voltage source inverter circuit is provided at the output of the half-bridge type single-phase converter circuit. The connection terminals 103 and 105 and the connection terminals 104 and 106 of the power module 1c are connected. The connection terminal 101 is connected to one end of an AC power supply (not shown) via the reactor 3, and the other end of the AC power supply is connected to the connection terminal 102. Connect to form a half-bridge single-phase converter circuit. As a result, a rectified voltage is output between the connection terminals 107 and 108. Therefore, the capacitor 4 or the like is connected, and the output is smoothed and converted to a DC voltage. The reactor 3 may be connected between the connection terminal 102 and the AC power supply instead of between the connection terminal 101 and the AC power supply. In the case of a common mode reactor, one reactor of the common mode reactor is connected to the connection terminal 101. The other reactor is connected between the connection terminal 102 and the AC power supply.

  In the half-bridge type single-phase converter circuit configured as described above, the diodes 11 to 14 constitute a single-phase AC input rectifier circuit, and the semiconductor switch elements 21 and 22 are connected in parallel and opposite to the diodes 11 and 12, respectively. It becomes. The diodes 13 and 14 have a function as a switching diode of the semiconductor switch elements 21 and 22 in addition to a function as a rectifying diode. Therefore, the semiconductor switch elements 21 and 22 are controlled based on the control method of the half-bridge type single-phase converter circuit based on the current detection result by the current detection shunt resistor 31, and the power factor of the AC power source is improved and the rectified DC is supplied. In addition to controlling the voltage and the like, and appropriately controlling the semiconductor switch elements 71 to 76 constituting the voltage source inverter, a three-phase AC voltage having an arbitrary voltage and frequency is output from the connection terminals 109 to 111 to thereby generate a three-phase AC voltage. Drive the inductive load, ie the motor.

  FIG. 9 shows another circuit example for driving an inductive load using the power module 1c, in which a voltage source inverter circuit is provided at the output of the DC chopper type single-phase converter circuit. Using the diode module 2 including the diodes 41 and 42, the cathode terminals of the diodes 41 and 42 are connected to the connection terminal 203, the anode terminal of the diode 41 is connected to the connection terminal 201, and the anode terminal of the diode 42 is connected to the connection terminal 202. The connection terminal 103 and the connection terminal 201 of the power module 1c are connected, the connection terminal 104 and the connection terminal 202 of the power module 1c are connected, and one end of each of the reactors 3a and 3b is connected to the connection terminal 203 and the other end of the reactor 3a. Is connected to the connection terminal 105, and the other end of the reactor 3b is connected to the connection terminal 106. Note that an AC power supply (not shown) is connected to the connection terminals 101 and 102. As a result, a rectified voltage is output between the connection terminals 107 and 108. Therefore, the capacitor 4 or the like is connected, and the output is smoothed and converted to a DC voltage. Note that the circuit may be configured by using two single diodes instead of the diode module 2.

  In the DC chopper type single-phase converter circuit provided with the switching circuit configured in this way in parallel, the diodes 11 and 12 and the diodes 41 and 42 of the diode module 2 constitute a single-phase AC input rectifier circuit, and a semiconductor switching element Reference numerals 21 and 22 denote switching circuits that improve the power factor of the AC power source and control the DC voltage after rectification, and diodes 13 and 14 serve as switching diodes for the semiconductor switch elements 21 and 22. Therefore, the semiconductor switch elements 21 and 22 are controlled based on the control method of the DC chopper type single-phase converter circuit provided with the switching circuit in parallel based on the current detection result by the current detection shunt resistor 31, and the power of the AC power supply is controlled. It is possible to control the DC voltage and the like after rate improvement and rectification. Then, by appropriately controlling the semiconductor switching elements 71 to 76 constituting the voltage source inverter, a three-phase AC voltage having an arbitrary voltage and frequency is output from the connection terminals 109 to 111 to drive a three-phase AC inductive load, that is, a motor. To do.

  Thus, by adding the diode module 2 and the reactors 3, 3a and 3b as external circuits, the power module 1c is a DC chopper type single-phase converter circuit having a half-bridge type single-phase converter circuit and a switching circuit in parallel. Either can be configured. In addition, since the power conversion circuit that drives the three-phase alternating current inductive load is integrated with the converter circuit, the mounting area of the power module can be reduced, and the electrical equipment can be reduced in size and the manufacturing cost can be reduced.

  The power module 1d of FIG. 10 has a circuit configuration different from that of the power module 1c, and has a circuit configuration in which a general three-phase output type voltage source inverter circuit is added to the circuit of the power module 1b. . Therefore, similarly to the power module 1c, the power module 1d can be configured as either a half-bridge type single-phase converter circuit or a DC chopper type single-phase converter circuit provided with a switching circuit in parallel, and a three-phase AC By reducing the mounting area by integrating the power conversion circuit that drives the inductive load with the converter circuit, it is possible to reduce the size of the electrical equipment and reduce manufacturing costs.

  The power modules 1c and 1d both include a power conversion circuit for driving a three-phase AC inductive load. However, any circuit configuration may be used as long as the power conversion circuit converts a DC voltage into an arbitrary output voltage. It may be.

  As described above, since the power modules 1c and 1d have a module configuration in which the half-bridge type or DC chopper type single-phase converter circuit and the power conversion circuit for driving the load are integrated, the mounting area of the power module is reduced. Therefore, it is possible to reduce the size of the electrical equipment and reduce manufacturing costs.

Embodiment 4 FIG.
The power module has been described with a configuration in which a soft recovery diode and a fast recovery diode are arranged in place. However, in a DC chopper type single-phase converter circuit equipped with a switching circuit in parallel, depending on the control method, all soft recovery diodes It does not matter. This will be described with reference to FIG.

  FIG. 11 shows a DC chopper type single-phase converter circuit including a power module 1b, a diode module 2b in which the diodes 41b and 42b are soft recovery diodes, and current detectors 51 and 52 for detecting the currents of the reactors 3a and 3b. It is. The semiconductor switch elements 21 and 22 are controlled so that the controller 53a performs the current critical mode type switching by the current detected by the current detectors 51 and 52.

  The controller 53a controls the semiconductor switch elements 21 and 22 individually to control a mode for storing energy in the reactors 3a and 3b and a mode for charging and boosting the capacitor 4 with the stored energy, respectively. That is, when the semiconductor switch element 21 is turned on, energy is accumulated in the reactor 3a, and when the semiconductor switch element 21 is turned off, energy accumulated in the reactor 3a is charged in the capacitor 4. Similarly, when the semiconductor switch element 22 is turned on, energy is accumulated in the reactor 3b, and when the semiconductor switch element 22 is turned off, energy accumulated in the reactor 3b is charged in the capacitor 4. Note that the controller 53a performs interleave control in which the phase at which the semiconductor switch element 21 is turned on and off is shifted from the phase at which the semiconductor switch element 22 is turned on / off, for example, the semiconductor switch element 22 is turned off when the semiconductor switch element 21 is turned on. The semiconductor switch element 21 is turned on when the semiconductor switch element 21 is turned on. At the same time, it is detected that the current flowing through the reactor 3a is zero. At the same time, the semiconductor switch element 21 is turned on and the current flowing through the reactor 3b is detected. Current critical mode type switching control is performed to turn on the semiconductor switch element 22 at the same time as detecting that is zero. That is, in a DC chopper type single-phase converter circuit provided with a switching circuit in parallel for interleave control, the turn-on / turn-off phase and switching timing of the semiconductor switch elements 21 and 22 are shifted, and the current flowing through the reactors 3a and 3b Performs a switching operation that turns on when zero is reached.

  In such a DC chopper type single-phase converter circuit, when the current flowing through the reactor 3a or 3b is zero, the semiconductor switch element 21 or 22 is turned on, so that so-called zero current switching (ZCS) is performed, and the diode 41b or 42b No reverse current flows or no oscillating current occurs during the reverse recovery time. Therefore, there is little possibility that the semiconductor switch element or the diode is damaged due to an overvoltage or a thermal load. Therefore, even if the diode module 2b, in which the diodes 41b and 42b are soft recovery diodes having a long reverse recovery time, is applied, there is little possibility of failure of the electric device, and this application can reduce the component cost of the electric device. .

  Even if the current critical mode switching control is performed, the diodes 41b and 42b of the diode module 2b may be fast recovery diodes.

  As described above, by performing the current critical mode type switching of the semiconductor switch elements 21 and 22, the diodes 41b and 42b can use soft recovery diodes with low component cost, and the diode module 2b with reduced component cost. Can be provided. In addition, by using the diode module 2b, it is possible to suppress the manufacturing cost of the electric equipment even in the circuit configuration using the DC chopper type single-phase converter circuit. Note that the circuit may be configured by using two single soft recovery diodes instead of the diode module 2b.

  Although an example of using current critical mode switching in a DC chopper type single-phase converter circuit has been described, current ripple is increased in a half-bridge type single-phase converter circuit because current ripple caused by switching increases. Mode type switching may be performed. In that case, the diodes 11 to 14 of the power module 1a of FIG. 1 or the diodes 11 to 14 of the power module 1b of FIG. 4 can be configured by soft recovery diodes.

  The controller 53a may be built in the power module 1b.

Embodiment 5 FIG.
The power module has been described with a configuration where soft recovery diodes and fast recovery diodes are arranged in place, but by further disposing a diode made of a wide band gap semiconductor, the loss of the entire circuit is reduced, and the circuit It is possible to suppress noise generated. This will be described.
In the power module 1e of FIG. 12, the diodes 13 and 14 of the power module 1a are diodes 13a and 14a made of a wide band gap semiconductor, for example, a Schottky barrier diode made of SiC, and switching of a semiconductor switching element is performed. The reverse current of the diode caused by the above is reduced, and the loss of the semiconductor switching element is reduced.

  The semiconductor switch elements 21 and 22 of the power module 1e can be turned on and off at a constant switching frequency by a control circuit of a half-bridge type single-phase converter circuit or a DC chopper type single-phase converter circuit provided in parallel. Done. When the semiconductor switch elements 21 and 22 are turned on, turn-on loss occurs in the semiconductor switch elements 21 and 22, and recovery losses occur in the diodes 13a and 14a. When the semiconductor switch elements 21 and 22 are turned off, A turn-off loss occurs in the semiconductor switch elements 21 and 22.

  Wide-bandgap semiconductor is a generic term for semiconductors with a large energy bandwidth compared to silicon semiconductors, which are widely used as semiconductor elements in power conversion circuits and converter circuits in electrical equipment for industrial and home appliances. As power semiconductors, there are gallium nitride and silicon carbide. Wide band gap type semiconductors have the characteristic that accumulation of reverse recovery charge is extremely small compared to silicon semiconductors. Therefore, when wide band gap type diodes are used, the reverse recovery time during semiconductor switch element turn-on operation However, the generation of backflow current and oscillating current is small, and the recovery loss accompanying this is also small.

  Therefore, the recovery loss generated in the diodes 13a and 14a of the power module 1e is extremely small compared to the recovery loss generated in the diodes 13 and 14 of the power module 1a, and the loss generated in the power module 1e is reduced. From this, while reducing the energy consumption of the electric equipment to which the power module 1e is applied, the manufacturing cost of the electric equipment can be reduced by miniaturizing and simplifying the radiator and the protection circuit of the electric equipment.

  Further, the conventional power factor correction circuit cannot perform switching at about 20 kHz due to heat dissipation and noise. However, if the diodes 13a and 14a are wide bandgap diodes, the loss of the power module 1e is reduced, the heat dissipation is improved, and the power module 1e can be downsized. The wiring and lead wires on the circuit board connected through the connection terminals of the power module 1e can be shortened, and the emitted or absorbed noise can be reduced. Therefore, the loss can be improved at a switching frequency of about 20 kHz as in the past, but the loss and heat generation are the same as those of the conventional case by setting the switching frequency to about 30 to 40 kHz. However, by increasing the switching frequency, the power factor improvement capability can be improved. This can contribute to the miniaturization of reactors 3, 3a and 3b in FIGS.

  In addition, even if the power module 1c has the diodes 13 and 14 having the wide band gap semiconductor diodes 13a and 14a, the output side of the power module is converted from a DC voltage to an arbitrary output voltage. It goes without saying that the same effect as that of the power module 1e can be obtained even with the configuration of the power conversion circuit.

  As described above, according to the fifth embodiment of the present invention, the power module 1e in which the diodes 13a and 14a are diodes made of a wide bandgap semiconductor having a small recovery loss is applied. While reducing the energy consumption of an apparatus, both the manufacturing cost of the power module 1e and the electric apparatus to which this is applied can be suppressed.

  In the power module 1e, the diodes 13 and 14 of the power module 1c are wide bandgap semiconductors. However, the diodes 11 and 12 of the power module 1c may be wide bandgap semiconductors. The diodes 11 and 12 have a small recovery loss reduction effect of the wide bandgap diode, but the wide bandgap diode has a small internal resistance, so that the loss of current passing through the diode is small. By using a wide band gap semiconductor, the loss of the entire circuit can be reduced.

Embodiment 6 FIG.
Similarly, in a circuit using the power module 1b, a power factor correction circuit is configured by using a separate wide band gap semiconductor, thereby reducing the loss of the entire circuit and reducing noise generated by the circuit. Can be suppressed. This will be described.
FIG. 13 shows a DC chopper type single-phase converter circuit including a power module 1b and a diode module 2c in which the diodes 41c and 42c are wide bandgap diodes. The semiconductor switch elements 21 and 22 are controlled so that the controller 53b performs current continuous mode switching.

  The controller 53b controls the semiconductor switch elements 21 and 22 individually to control a mode for storing energy in the reactors 3a and 3b and a mode for charging and boosting the capacitor 4 with the stored energy, respectively. That is, when the semiconductor switch element 21 is turned on, energy is accumulated in the reactor 3a, and when the semiconductor switch element 21 is turned off, energy accumulated in the reactor 3a is charged in the capacitor 4. Similarly, when the semiconductor switch element 22 is turned on, energy is accumulated in the reactor 3b, and when the semiconductor switch element 22 is turned off, energy accumulated in the reactor 3b is charged in the capacitor 4. Note that the controller 53b performs interleave control in which the phase at which the semiconductor switch element 21 is turned on and off is shifted from the phase at which the semiconductor switch element 22 is turned on / off, for example, the semiconductor switch element 22 is turned off when the semiconductor switch element 21 is turned on. The semiconductor switch element 22 is turned on when the semiconductor switch element 21 is turned off, and the semiconductor switch elements 21 and 22 are turned on and off at the same constant frequency, so that the currents of the reactors 3a and 3b are zero. Before this, the semiconductor switch element 21 or 22 performs switching control of a continuous current mode type in which it is turned on. Therefore, when the semiconductor switch elements 21 and 22 are turned on, a turn-on loss occurs in the semiconductor switch elements 21 and 22, and a recovery loss occurs in the diodes 41c and 42c.

  However, since the diode module 2c in which the diodes 41c and 42c are wide bandgap diodes is applied, the recovery loss generated in the diodes 41c and 42c is compared with the recovery loss generated in the diodes 41 and 42 of the diode module 2. Become extremely small. Thus, the energy consumption of the electric device to which the power module 2c is applied can be reduced, and the manufacturing cost of the electric device can be reduced by reducing the size and simplification of the radiator and the protection circuit of the electric device.

  The power module may be a circuit constituted by the power module 1d and the diode module 2c, or a power conversion circuit that converts the output side of the power module 1d from a DC voltage to an arbitrary output voltage. It goes without saying that the same effect as that of the circuit constituted by 1b and the diode module 2c can be obtained.

  The controller 53b may be built in the power module 1b.

  As described above, according to the seventh embodiment of the present invention, in the electric device constituted by the DC chopper type single-phase converter circuit provided with the controller based on the continuous current mode type control method, the diodes 41c and 42c are provided. Since the diode module 2c, which is a diode made of a wide bandgap semiconductor with a small recovery loss, is applied, the energy consumption of the electrical device to which the power module 2c is applied is reduced, and the power module 2c and the electrical device to which the power module 2c is applied Both manufacturing costs can be reduced.

  The diodes 11 to 14 of the power modules 1b and 1d may be wide band gap semiconductors. In that case, the recovery loss reduction effect of the wide band gap type diode is small, but the loss is also suppressed by the reduction of the internal resistance of the wide band gap type diode, so that the loss of the entire circuit can also be reduced.

Embodiment 7 FIG.
FIG. 14 is a circuit configuration diagram of a power module according to Embodiment 7 of the present invention. In the power module 1f, the semiconductor switch elements 21 and 22 in the power module 1e are replaced with semiconductor switch elements 21a and 22a made of wide bandgap semiconductors. It is a thing.

  Even in a semiconductor switching element made of a wide bandgap semiconductor, since charge accumulation is extremely small as in the case of a diode, turn-on loss and turn-off loss are extremely small compared to a semiconductor switching element made of silicon semiconductor. Therefore, the turn-on loss and turn-off loss generated in the semiconductor switch elements 21a and 22a of the power module 1f are extremely small compared to the turn-on loss and turn-off loss generated in the semiconductor switch elements 21 and 22 of the power module 1e. From this, while reducing the energy consumption of the electric equipment to which the power module 1f is applied, the manufacturing cost of the electric equipment can be reduced by miniaturizing and simplifying the radiator and the protection circuit of the electric equipment.

  Note that even if the power module 1a, 1b, 1c, or 1d has a configuration in which the semiconductor switch elements 21 and 22 of the power modules 1a, 1b, 1c, and 1d are semiconductor switch elements 21a and 22a made of wide band gap semiconductors, Needless to say, similar effects can be obtained.

  Further, as in the power module 1e, the diodes 13 and 14 or all of the diodes 11 to 14 may be wide bandgap semiconductors, and the semiconductor switch elements 21 and 22 may be wide bandgap semiconductor semiconductor switches. Alternatively, the diode module 2 may be combined with a wide band gap semiconductor. Since the semiconductor switch is a wide bandgap semiconductor rather than only the diode having a wide bandgap semiconductor, the circuit loss is reduced and the efficiency of the entire power factor correction circuit can be increased.

  The 1c and 1d semiconductor switches 21, 22, 71 to 76 may be wide band gap semiconductors, and the diodes 11 to 14, 61 to 66 may be wide band gap semiconductors. As a result, not only the power factor correction circuit but also the motor driving portion can be improved in efficiency.

  Although the description has been given of increasing the efficiency by reducing the loss, the switching frequency may be increased to a level where the loss is equivalent to the conventional one, and it may be used to improve performance such as power factor improvement. Conventionally, the semiconductor switches 21 and 22 have a switching frequency of about 20 kHz, whereas the switching frequency is increased to about 30 to 40 kHz to suppress the ripple of the input current, and the reactor is reduced in capacity, that is, downsized. It is also possible to do so.

  In addition, since the switching frequency for driving the motor can be increased by using the semiconductor switches 71 to 76 and the diodes 61 to 66 as wide band gap type semiconductors, the efficiency of the entire circuit can be improved and the motor driving which has not been realized in the past can be improved. It is possible to improve motor performance by increasing the frequency of the motor.

  In addition to the characteristics that wide bandgap semiconductors have very little reverse recovery charge accumulation compared to silicon semiconductors, gallium nitride and silicon carbide that make up wide bandgap semiconductors are silicon that make up silicon semiconductors. The breakdown voltage strength is about 10 times that of the semiconductor device, and the withstand voltage strength of the semiconductor element is increased. Therefore, by making the diodes 11 to 14 of the power modules 1a and 1b and the semiconductor switches 21 and 22 into wide bandgap semiconductors, it is easy to increase the breakdown voltage. For example, even a module having a structure and configuration that can only achieve a withstand voltage of about 600 V with a silicon semiconductor can be easily realized with a withstand voltage of about 1200 V by configuring with a wide band gap semiconductor.

  Similarly, in the power modules 1 c and 1 d, the diodes 11 to 14 and 61 to 66 and the semiconductor switches 21, 22, and 71 to 76 are wide band gap semiconductors, so that a high breakdown voltage can be easily achieved. Since not only the rate improvement circuit side but also the motor drive circuit side can have a high breakdown voltage, the motor can be driven to a higher speed rotation range. For example, in a module made of silicon semiconductor, only an AC voltage of about 300 V could be applied to the motor, but in a module made of wide band gap semiconductor, a withstand voltage more than twice can be realized. For motors that can apply an AC voltage of about 600 V and increase the rotation speed range or increase the torque proportional to the applied voltage, expand the rotation speed range to a high speed rotation range or increase the torque output range. It can also be expanded to an area. Further, when the motor can have the same output and the same output torque, the current flowing through the motor can be reduced as much as the applied voltage can be set, and the windings and the wiring connecting the components can be made thinner.

As described above, according to the eighth embodiment of the present invention, the power module 1f in which the semiconductor switch elements 21a and 22 are semiconductor switch elements made of a wide band gap type semiconductor with small turn-on loss and turn-off loss is applied. While reducing the energy consumption of the electric equipment to which the power module 1f is applied, it is possible to suppress both the manufacturing costs of the power module 1f and the electric equipment to which the power module 1f is applied.
In addition, by using a wide bandgap semiconductor, it is possible to improve performance such as power factor improvement and reactor miniaturization by increasing the switching frequency instead of suppressing loss.

1a, 1b, 1c, 1d, 1e, 1f Power module 2, 2b, 2c Diode module 3, 3a, 3b Reactor 4 Large capacity capacitor 11-14, 13a, 14a, 41, 42, 41c, 42c, 61-66 Diode 21, 22, 21 a, 22 a, 71-76 Semiconductor switch element 31 Shunt resistor for current detection 51, 52 Current detector 53 a, 53 b Controller 101-110, 111, 117, 118, 201, 202, 203 Connection terminal

Claims (9)

A first rectifier configured by a first rectifier element and a second rectifier element, wherein a current output side of the second rectifier element is connected to a current output side of the first rectifier element ; A first connection terminal connected to the current input side of the rectifier element, a second connection terminal connected to the current input side of the second rectifier element, a third rectifier element and a fourth rectifier element; And a second rectifying means connected to the current input side of the fourth rectifying element on the current input side of the third rectifying element, and a third rectifier connected to the current output side of the third rectifying element. And a fourth connection terminal connected to a current output side of the fourth rectifying element, a current input side of the third rectifying element, and a current input side of the fourth rectifying element. against the current detecting means but connected, between the other end of said first of said current detecting means and current input side of the rectifying device First switching means, and second switching means connected between the current input side of the second rectifying element and the other end of the current detecting means, and the first rectifying means is constituted by the second reverse recovery time than the rectifying means is shorter rectifying element, said first rectifier element performs switching in cooperation with said first switching means, the second rectifying element is the second Switching in cooperation with the switching means, and the second rectifying means constitutes a negative side circuit of a rectifying circuit for rectifying the commercial power supply and outputs a rectified output of the commercial power supply connected to the rectifying circuit. Power module to do. 2. The power module according to claim 1, wherein the first rectifier is a rectifier element formed of a wide bandgap semiconductor . The power module according to claim 2 , wherein the first rectifying means is a rectifying element made of silicon carbide or gallium nitride. 4. The power module according to claim 2, wherein the first switching means and the second switching means are switching means made of a wide bandgap semiconductor. The power module according to claim 4, wherein the first switching means and the second switching means are switching means made of silicon carbide or gallium nitride. With connecting commercial power supply through a reactor between the first connection terminal of the power module according to claim 1 to 5 and the second connecting terminal of the power module, and the first connection terminal A power conversion device configured to connect the third connection terminal of the power module and connect the second connection terminal and the fourth connection terminal of the power module. And the power module according to claim 1 to 5, wherein the power module of the third connection terminal and the fourth of the power module connects the current input side of the first external rectifying device connecting terminal and the second And a current output side of the first external rectifying element and a current output side of the second external rectifying element are connected to each other and connected to the current input side of the external rectifying element. A rectifying circuit for rectifying a commercial power source connected between a current input side of the element and a current input side of the second external rectifying element; and currents of the first external rectifying element and the second external rectifying element A first reactor connected between an output side and the first connection terminal of the power module; a current output side of the first external rectifying element and the second external rectifying element; and Said Power conversion apparatus characterized by comprising connecting a second reactor that is, the between the connection terminals. Control means for controlling switching of the first switching means and the second switching means, and performing interleave control for alternately switching the first switching means and the second switching means. The power conversion device according to claim 7 . Control means for controlling the switching of the first switching means and the second switching means, wherein the first switching means and the second switching means perform switching in a current continuous mode. The power converter according to claim 7 or 8 .

Images