JP5518787B2 - 化学増幅型レジスト組成物の製造方法及びフォトマスクブランク - Google Patents

化学増幅型レジスト組成物の製造方法及びフォトマスクブランク Download PDF

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JP5518787B2
JP5518787B2 JP2011093772A JP2011093772A JP5518787B2 JP 5518787 B2 JP5518787 B2 JP 5518787B2 JP 2011093772 A JP2011093772 A JP 2011093772A JP 2011093772 A JP2011093772 A JP 2011093772A JP 5518787 B2 JP5518787 B2 JP 5518787B2
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resist composition
resist
pattern
sensitivity
irradiation
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JP2012226119A (ja
JP2012226119A5 (enExample
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恵一 増永
聡 渡邉
正幸 中津
慎一 五十嵐
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Shin Etsu Chemical Co Ltd
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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2011093772A 2011-04-20 2011-04-20 化学増幅型レジスト組成物の製造方法及びフォトマスクブランク Active JP5518787B2 (ja)

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JP2012226119A JP2012226119A (ja) 2012-11-15
JP2012226119A5 JP2012226119A5 (enExample) 2013-04-11
JP5518787B2 true JP5518787B2 (ja) 2014-06-11

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JP7742267B2 (ja) * 2021-09-28 2025-09-19 富士フイルム株式会社 感光性組成物の検査方法、及び感光性組成物の製造方法
JP2023125930A (ja) * 2022-02-28 2023-09-07 富士フイルム株式会社 レジスト組成物の製造方法、及びレジスト組成物の検定方法

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