JP5492758B2 - Lighting device for plant cultivation and plant cultivation device - Google Patents

Description

  The present invention relates to an illumination device for plant cultivation and a plant cultivation device using a semiconductor light emitting element.

In recent years, plant factories and vegetable factories that produce crops by controlling all conditions that affect plant growth, such as light, temperature, humidity, and carbon dioxide concentration in the cultivation environment, as an agricultural environment that is not affected by changes in natural conditions Etc. are being put to practical use.
In these plant factories, there are a complete artificial light type and a solar combined type, and it is essential to install an illuminating device that irradiates artificial light. And it is required from an illuminating device to irradiate a plant with red light and blue light. A semiconductor light emitting element (LED) has been used as a light source of these lighting devices.

  In Patent Document 1, a large number of LED elements are mounted on a flexible printed circuit board, and a hard transparent resin layer is attached to the surface of the flexible printed circuit board so that the flexible printed circuit board is transparent. In an LED display device including an LED substrate held in a curved shape by a resin layer, a plurality of LED element arrays are formed by arranging a plurality of the LED elements on a plurality of straight lines, and each LED In the element row, a bonding wire for connecting a power feeding portion of each LED element to the electrode on the flexible printed board is wired on the arrangement line of the LED element, while the arrangement direction of the LED elements in the plurality of LED element rows is set. An LED display device having different directions is described.

JP 2002-333847 A

By the way, in the lighting device for plant cultivation, it is preferable that the light from the semiconductor light emitting element mounted on the lighting device is efficiently irradiated to the plant to be cultivated. For this reason, it is calculated | required that the illuminating device for plant cultivation can be arrange | positioned close to a plant.
Further, when the semiconductor light emitting element has high brightness, the current flowing through the semiconductor light emitting element increases, and the amount of heat generated by the semiconductor light emitting element increases. For this reason, in the illuminating device for plant cultivation using the high-intensity semiconductor light-emitting device, it is required that the heat generated from the semiconductor light-emitting device can be efficiently dissipated. However, when the material of the flexible printed circuit board is an organic insulator system such as a glass cloth base epoxy resin or a paper base phenol resin, or a flexible organic insulator system such as polyester or polyimide, these materials are There is a problem that heat generated from the semiconductor light emitting element cannot be efficiently radiated because the thermal conductivity is small compared to metals such as copper, aluminum or alloys thereof.
Furthermore, since the lighting device for plant cultivation is arranged in a high humidity environment, it is preferable to have a structure that is excellent in moisture resistance and can be manufactured at low cost.
The objective of this invention is providing the illuminating device for plant cultivation, and the plant cultivation apparatus which can be thermally radiated while being able to thermally radiate the heat | fever of a semiconductor light-emitting device efficiently.

For this purpose, a lighting device for plant cultivation to which the present invention is applied includes a heat conductive substrate having a rectangular surface shape, and a plurality of light emitting components that are arranged and mounted in the longitudinal direction of the heat conductive substrate. And a holding body that is rotatable around an axis and is attached to the outer surface at an angle with respect to the direction of the axis.
In such an illuminating device for plant cultivation, the heat conductive substrate may be made of a metal material.
And the holding body can be characterized by being comprised with the metal material.
Furthermore, the outer surface of the holding body may be characterized by having an inclined surface with respect to the axis.
The holding body is characterized in that the outer surface has an inclined surface with respect to the axis, and the area of the cut surface provided to be orthogonal to the axis is larger on the upper end side than on the lower end side. be able to.
Furthermore, the holding body may be characterized by including a concave portion or a convex portion for heat dissipation on at least one surface of the outer surface or the inner surface.
And a holding body can be equipped with the hole or notch which takes in air on the surface, It can be characterized by the above-mentioned.

Furthermore, in such an illumination device for plant cultivation, the plurality of light emitting components may include a semiconductor light emitting element that emits blue light and a semiconductor light emitting element that emits red light.
The semiconductor light emitting element that emits blue light included in the plurality of light emitting components has an InGaN light emitting layer having a peak wavelength of 420 nm to 480 nm, and the semiconductor light emitting element that emits red light emits AlGaInP light having a peak wavelength of 650 nm to 690 nm. It can be characterized by having a layer.
Furthermore, the semiconductor light-emitting element that emits blue light and the semiconductor light-emitting element that emits red light included in the plurality of light-emitting components are one of a semiconductor light-emitting element that emits blue light and a semiconductor light-emitting element that emits red light, respectively. Having a P-electrode and an N-electrode on the surface, and having no P-electrode or N-electrode on the other surface of each of the semiconductor light-emitting element emitting blue light and the semiconductor light-emitting element emitting red light Can be a feature.

Furthermore, from another viewpoint, the plant cultivation device to which the present invention is applied is provided so as to face a cultivation container that accommodates a plurality of plants to be cultivated and a plurality of plants that grow, and has a surface shape. A light-emitting unit comprising a heat conductive substrate having a rectangular shape and a plurality of light-emitting components arranged and mounted in the longitudinal direction of the heat-conductive substrate; However, it is provided with the holding | maintenance body attached diagonally with respect to the direction of an axis | shaft on an outer surface, and the illuminating device which irradiates the light which a several light emitting component emits from the side of a plant.
Moreover, the plant cultivation apparatus to which the present invention is applied is provided with a cultivation container that accommodates a plurality of plants to be cultivated, and a plurality of growing plants, and has a rectangular surface shape. A light-emitting unit comprising a substrate and a plurality of light-emitting components arranged and mounted in the longitudinal direction of the thermally conductive substrate, and rotatable about an axis, the longitudinal direction of the light-emitting unit being an axis on the outer surface And a lighting device that irradiates a plant with light emitted from a plurality of light-emitting components.

  ADVANTAGE OF THE INVENTION According to this invention, while being able to thermally radiate the heat | fever of a semiconductor light-emitting device efficiently, the illuminating device for plant cultivation and plant cultivation apparatus which can be manufactured cheaply can be provided.

It is the figure which showed an example of the plant cultivation apparatus with which 1st Embodiment is applied. It is a figure which shows an example of the holding body which improved heat dissipation. It is the figure which showed another example of the plant cultivation apparatus. It is the enlarged view which showed an example of the illuminating device to which 1st Embodiment is applied. It is the figure which showed an example of the light emission unit of the illuminating device to which 1st Embodiment is applied. It is sectional drawing for demonstrating an example of a structure of a blue light emitting chip. It is a top view of a blue light emitting chip. It is sectional drawing for demonstrating an example of a structure of a red light emitting chip. It is a top view of a red light emitting chip. It is the figure which showed the light emission unit comprised from two light emission units. It is the figure which showed an example of the light emission part of the illuminating device to which 2nd Embodiment is applied. It is a figure showing an example of composition of a light emitting element package. It is the figure which showed an example of the light emission unit of the illuminating device to which 3rd Embodiment is applied. It is a figure which shows the plant cultivation apparatus with which 4th Embodiment is applied.

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.
[First Embodiment]
FIG. 1 is a diagram illustrating an example of a plant cultivation apparatus 1 to which the first exemplary embodiment is applied.
The plant cultivation apparatus 1 includes a bottom plate 15, support columns 16 provided at at least four corners of the bottom plate 15, a top plate 17 supported by the support columns 16, and a cultivation container 3 for growing the plant 2 provided on the bottom plate 15. And a plurality of lighting devices 10 suspended from the top plate 17 side.
And the illuminating device 10 is equipped with the light emission unit 11 and the cylindrical holding body 12 to which the light emission unit 11 is attached.
The lighting device 10 includes a rotation shaft 13 on the axis of a cylindrical holding body 12.

  The plant cultivation device 1 includes a power supply line 18 that supplies a current to the semiconductor light emitting element chip 64 mounted on the lighting device 10. The power supply line 18 is drawn to the outside of the plant cultivation apparatus 1 along the back surface of the top plate 17 and connected to a power source 19 placed outside the plant cultivation apparatus 1.

Moreover, the plant cultivation apparatus 1 is provided with the rotation control part 14 provided with the motor for rotating the illuminating device 10, etc. The rotation shaft 13 of the illumination device 10 is connected to the rotation control unit 14.
That is, the plant cultivation device 1 includes a rotation control unit 14 on the top plate 17, and the rotation control unit 14 supports the lighting device 10 via the rotation shaft 13.

The bottom plate 15 is a structural material on which the cultivation container 3 is placed. The bottom plate 15 only needs to hold the cultivation container 3 and may be made of any material.
The cultivation container 3 should just hold | maintain the plant 2 to grow, and may provide the supply port and discharge port of a culture solution so that the culture solution for growing the plant 2 may be circulated so that it may mention later. When circulating the culture solution, a circulation unit (not shown) for circulating the culture solution is provided outside the plant cultivation apparatus 1.
In the present embodiment, the plant 2 to be cultivated is not particularly limited, but may be one having plant height such as potato, soybean, shiso.

  It is preferable that the top plate 17 has a strength capable of supporting the plurality of lighting devices 10. The rotation control unit 14 rotates the rotation shaft 13, so that the rotation shaft 13 of the lighting device 10 penetrates the top plate 17 so that the cylindrical holding body 12 can rotate in the direction of arrow A. A through hole is provided.

  As will be described later, the light emitting unit 11 of the lighting device 10 according to the present embodiment includes a semiconductor light emitting element chip 64 as an example of a plurality of light emitting components on a heat conductive substrate 21 having a rectangular surface shape excellent in thermal conductivity. They are mounted in rows (see FIGS. 4 and 5 described later).

The light emitting unit 11 is attached to the holding body 12 of the lighting device 10 so as to be wound obliquely or spirally with respect to the axis of the cylindrical holding body 12. That is, the light emitting unit 11 is attached obliquely with respect to the axial direction of the holding body 12.
The holding body 12 of the lighting device 10 is made of a material having excellent heat conductivity, such as aluminum, copper or an alloy thereof, so that heat generated by the semiconductor light emitting element chip 64 mounted on the light emitting unit 11 can be dissipated by heat conduction. It is preferably made of a metal such as stainless steel (SUS). Moreover, ceramics with good thermal conductivity such as AlN are also preferable.
Furthermore, in order to effectively use light, the surface of the holding body 12 is preferably made of a material having high reflectance such as aluminum, silver, a white resin material, and gold for red. It is also desirable to wear glass resin (transparent) or the like on the outermost surface of the holding body 12 in order to prevent corrosion and further improve the reflectance.

The holder 12 may be cooled by gas cooling (air cooling) or liquid cooling (liquid cooling) in order to easily dissipate heat generated by the semiconductor light emitting element chip 64. For example, the holding body 12 preferably has a hollow cylindrical shape held by spokes that extend radially from the rotary shaft 13.
Further, the hollow inside of the holding body 12 may be used as a conduit for circulating a cooling refrigerant. Alternatively, a cooling pipe may be provided inside the hollow of the holding body 12, and a liquid refrigerant may be circulated through the pipe. As the refrigerant, water, ethylene glycol or the like can be used.
When the holder 12 is rotated and cooled with a liquid refrigerant, the refrigerant supply unit (not shown) and the holder 12 are connected with a rotatable seal member such as an O-ring so that the refrigerant does not leak. What is necessary is just to combine.

And as above-mentioned, the rotating shaft 13 is provided in the illuminating device 10 on the axis | shaft of the holding body 12. As shown in FIG. The holding body 12 is rotated by the rotation control unit 14 via the rotation shaft 13.
When the holder 12 is rotated, power is supplied to the semiconductor light emitting element chip 64 mounted on the holder 12 via the thermally conductive substrate 21 via a sliding mechanism such as a brush or electromagnetic induction. To do.

  In addition, although the illuminating device 10 was demonstrated as hanging from the top plate 17, the structure put on floors, such as the baseplate 15, may be sufficient. In the case of the configuration placed on the floor, the positional relationship between the lighting device 10 and the rotation control unit 14 shown in FIG. 1 is reversed. That is, the rotation control unit 14 is placed on the bottom plate 15, and the rotation shaft 13 extends upward from the rotation control unit 14 to support and rotate the lighting device 10. Moreover, if it installs in a wall, the illuminating device 10 can be utilized also as sideways.

The illuminating device 10 is arrange | positioned in the position which becomes between the plants 2 whose plant height becomes large when growing. And the illuminating device 10 raises the efficiency of the light irradiation to the plant 2 by irradiating light from the side surface of the plant 2, and promotes the growth of the plant 2 more.
In addition, the illuminating device 10 may be arrange | positioned so that the plant 2 may stand and surround the illuminating device 10. FIG. And the plant 2 may be arrange | positioned so that the illuminating device 10 may be surrounded by single, and may be arrange | positioned so that it may surround in multiple.

FIG. 2 is a diagram illustrating an example of the holding body 12 with improved heat dissipation.
Fig.2 (a) is a figure which shows an example of the holding body 12 which provided the several hole 12a in the surface. The air flows from the periphery of the holding body 12 to the inside of the holding body 12 or from the inside of the holding body 12 to the periphery of the holding body 12 through the holes 12a, whereby heat dissipation of the holding body 12 is promoted.
The hole 12a provided in the holding body 12 may be circular or other shape such as a rectangle. Further, the positions where the holes 12a are provided in the holding body 12, and the number and size of the holes 12a are not particularly limited, and may be provided in consideration of the positions where the light emitting units 11 are installed.

FIG.2 (b) is a figure which shows an example of the holding body 12 which provided the some notch 12b in the surface. The notch 12 b is configured by cutting the surface of the holding body 12 into an arc shape and bending the arc portion into the holding body 12.
By the rotation of the holding body 12 (arrow A shown in FIG. 1), the notch 12b forcibly guides air from the outside of the holding body 12 to the inside of the holding body 12, and the heat dissipation of the holding body 12 is further promoted.
The notch 12b provided in the holding body 12 may have an arcuate outer peripheral portion or another shape such as a rectangular shape. Further, the positions where the notches 12b are provided in the holding body 12, and the number and size of the notches 12b are not particularly limited, and may be provided in consideration of the positions where the light emitting units 11 are installed.

FIG.2 (c) is a figure which shows an example of the holding body 12 which provided the some convex part 12c in the inner surface. Each convex part 12c is provided with a triangular cross section inside the cylindrical holder 12. The contact area with the air flowing through the inside of the holding body 12 is increased by the convex portion 12c, and the heat dissipation of the holding body 12 is further promoted.
The convex part 12c provided in the holding body 12 is not limited to a triangular cross-sectional shape, and may have a structure in which the surface area inside the holding body 12 increases. Further, the positions where the convex portions 12c are provided inside the holding body 12, and the number and size of the convex portions 12c are not particularly limited, and a configuration that promotes heat dissipation may be selected.
A concave portion may be used instead of the convex portion 12c.

FIG. 2D is a diagram showing an example of the holding body 12 provided with a plurality of fin-shaped protrusions 12d on the outer surface. Each convex part 12d is provided outside the cylindrical holding body 12 so as to protrude in a plate shape. The contact area with the air flowing around the holding body 12 is increased by the convex portion 12d, and heat dissipation of the holding body 12 is further promoted.
The convex portion 12d provided on the holding body 12 is not limited to a plate shape, and may have any structure that increases the surface area outside the holding body 12. Further, the positions where the convex portions 12d are provided on the outside of the holding body 12, and the number and size of the convex portions 12d are not particularly limited, and may be provided in consideration of the positions where the light emitting units 11 are installed.
Note that the protrusion 11 d may be provided on the outer surface of the holding body 12 so as to be divided in the axial direction of the holding body 12 so as not to disturb the installation of the light emitting unit 11.

FIG.2 (e) is a figure which shows an example of the holding body 12 which provided the fin (fin) -shaped convex part 12e in the edge part of the axial direction. A plate-like convex portion 12 e is provided at an end portion in the axial direction of the cylindrical holding body 12 so as to protrude from the end portion to the outside of the holding body 12. The contact area with the air flowing around the holding body 12 is increased by the convex portion 12e, and heat dissipation of the holding body 12 is further promoted.
In FIG. 2 (e), two convex portions 12 e are provided on the outer periphery of the holding body 12, but the number is not limited to two, and may be three or more, so as to surround the outer periphery of the holding body 12. It may be provided.
Moreover, in FIG.2 (e), although the convex part 12e is provided in one end of the axial direction of the holding body 12, it may be provided in the other end and may be provided in the middle. Moreover, the convex part 12e may be provided in several places (for example, the both ends of an axial direction, or several positions of an axial direction) of the outer periphery of the holding body 12. FIG.
Furthermore, a plurality of configurations described in FIGS. 2A to 2E may be used in combination, or may be used in combination with the cooling method using the refrigerant described above.
The holding body 12 is cylindrical, but is not limited to a cylindrical shape, and may be a prismatic shape such as a quadrangular column, a hexagonal column, or an octagonal column.

FIG. 3 is a diagram illustrating another example of the plant cultivation apparatus 1. In FIG. 1, the holding body 12 is cylindrical, but in FIG. 2, the shape of the holding body 12 depends on the positional relationship between the plant 2 and the lighting device 10 (for example, when the height of the plant 2 is low). For example, a case where the area of the upper end portion (upper surface) is larger than the area of the lower end portion (lower surface) so that the plant 2 can be irradiated obliquely from above is shown. This is desirable because the amount of light irradiation received by the plant 2 is increased. The angle of the truncated cone can be optimized by the size of the plant 2 and the height of the lighting device 10. Moreover, even if it is not a truncated cone, shapes such as a cone, a pyramid, a truncated pyramid, and a hemisphere are also desirable. When the area of the upper end (upper surface) of the holding body 12 is made larger than the surface line of the lower end (lower surface), the truncated cone is most desirable from the viewpoint of ease of processing and ease of mounting of the light emitting unit 11.
As described above, as shown in FIG. 1, in the holding body 12, the area of the cut surface provided so as to be orthogonal to the axis is the upper end side (upper surface of the cylindrical holding body 12) and the lower end. As shown in FIG. 3, the upper end side (the upper surface of the truncated cone-shaped holding body 12) is the lower end side (the truncated cone). (Not shown), the upper end side (upper surface) may be smaller than the lower end side (lower surface).
Even if the upper surface and the lower surface of the holding body 12 are not surfaces orthogonal to the axis, it is only necessary to assume surfaces orthogonal to the axis at the upper end portion and the lower end portion. It was set as the cut surface provided so that it might orthogonally cross.

FIG. 4 is an enlarged view showing an example of the illumination device 10 to which the first embodiment is applied.
The illumination device 10 is configured such that the light emitting unit 11 is wound around the holding body 12 in an oblique or spiral manner. That is, the light emitting unit 11 has a rectangular surface shape, and its longitudinal direction is inclined with respect to the axial direction of the holding body 12.
The light emitting unit 11 includes a heat conductive substrate 21, a plurality of semiconductor light emitting device chips 64 provided on the center of the surface of the heat conductive substrate 21, and a semiconductor light emitting device chip on the surface of the heat conductive substrate 21. 64, wiring boards 22a and 22b provided on both sides so as to sandwich 64.
Then, the p electrode and the n electrode of the semiconductor light emitting element chip 64 are connected to the conductor patterns 23b, 23c, and 23d (see FIG. 5 described later) provided on the wiring boards 22a and 22b by the bonding wires 65. The plurality of semiconductor light emitting element chips 64 may be semiconductor light emitting element chips that emit blue light or red light, or may be a mixture of semiconductor light emitting element chips that emit blue light or red light.
The term “semiconductor light emitting element chip 64” is used when a blue light emitting chip 641 shown in FIGS. 6 and 7 and a red light emitting chip 642 shown in FIGS. Further, the term “p electrode” does not distinguish between a first p electrode 210 in a blue light emitting chip 641 shown in FIGS. 6 and 7 described later and a second p electrode 410 in a red light emitting chip 642 shown in FIGS. Sometimes used. Similarly, the term “n electrode” distinguishes a first n electrode 240 in a blue light emitting chip 641 shown in FIGS. 6 and 7 described later and a second n electrode 400 in a red light emitting chip 642 shown in FIGS. Use when not.

In order to suppress the stress on the bonding wire 65 when the light emitting unit 11 is wound obliquely or spirally around the cylindrical holding body 12, the p electrode and the n electrode of the semiconductor light emitting element chip 64 and the wiring substrate are suppressed. The bonding wires 65 that connect the conductor patterns 23b, 23c, and 23d provided on 22a and 22b are provided so as to face the axial direction (BB line direction) of the holding body 12.
That is, since the bonding wire 65 is provided in the axial direction (BB line direction) of the holding body 12, the bonding wire 65 does not extend or contract even if the light emitting unit 11 is wound around the holding body 12 in a spiral shape. Thereby, it is suppressed that the reliability of the electrical connection between the semiconductor light emitting element chip 64 and the wiring boards 22a and 22b is impaired.

When the illumination device 10 does not rotate, the plant 2 is irradiated only with light emitted from the semiconductor light emitting element chip 64 at a position facing the plant 2. On the other hand, when the illuminating device 10 rotates, the light emitted from the plurality of semiconductor light emitting element chips 64 mounted on the light emitting unit 11 is evenly applied to the plant 2. In particular, when a plurality of semiconductor light emitting element chips 64 that emit light of different emission wavelengths such as red light and blue light are used in combination, the light of different emission wavelengths is irradiated to the plant 2 without being biased. .
In addition, although the illuminating device 10 was demonstrated as rotating on the rotating shaft 13, you may use it without rotating.

  Although not described in detail here, the plant cultivation apparatus 1 may be provided in an environment in which temperature and humidity are controlled.

Next, operation | movement of the plant cultivation apparatus 1 is demonstrated.
When plant cultivation is hydroponics that does not use a medium, the cultivation container 3 of the plant cultivation apparatus 1 stores a culture solution that provides nutrients to the roots of the plant 2 together with the plant 2. The culture solution may be circulated by being supplied from one end of the cultivation container 3 and flowing out from the other end.
When plant cultivation is solid medium cultivation using a culture medium, a culture medium such as soil is stored in the cultivation container 3 of the plant cultivation apparatus 1 together with the plant 2. And irrigation and fertilization are performed simultaneously by giving the cultivation container 3 the liquid fertilizer which melt | dissolved the fertilizer in water.

Then, when the power is supplied from the power source 19 to the lighting device 10, the light emitted from the semiconductor light emitting element chip 64 of the lighting device 10 is irradiated to the plant 2. By rotating the illumination device 10, the light emitted from the illumination device 10 is irradiated to the plant 2 without depending on the positional relationship between the plant 2 and the semiconductor light emitting element chip 64 of the illumination device 10. The plant 2 grows by performing photosynthesis with these lights.
In addition, the wavelength of the light irradiated to the plant 2 is determined by the light emission wavelength of the semiconductor light emitting element chip 64 mounted on the illumination device 10. It is known that red and blue light has an excellent effect on the growth of the plant 2.
The time for which the plant 2 is irradiated with light is determined by the lighting time of the lighting device 10. This lighting period may be controlled by a control unit (not shown).

Next, the light emitting unit 11 will be described in detail.
<Light emitting unit 11>
FIG. 5 is a diagram illustrating an example of the light emitting unit 11 of the illumination device 10 to which the first embodiment is applied. FIG. 5A shows a plan view of the light emitting unit 11 as viewed from above, and FIG. 5B shows a cross-sectional view of the light emitting unit 11 taken along the line VB-VB.
As shown in FIG. 5 (b), the light emitting unit 11 is provided on one surface with a heat conductive substrate 21 having a convex portion 21a integrally formed on one surface and a surface 21b of the convex portion 21a. The plurality of semiconductor light emitting element chips 64 and wiring boards 22a and 22b provided on the surface 21c of the heat conductive substrate 21 other than the convex portions 21a via the adhesive layer 24 are provided. Wirings 22 a and 22 b are provided with wiring for supplying current to the semiconductor light emitting element chip 64.
Nine semiconductor light emitting element chips 64 are mounted on the heat conductive substrate 21 shown in FIG. When the nine semiconductor light emitting element chips 64 are distinguished from each other, they are expressed as semiconductor light emitting element chips 64-1 to 64-9.
The first embodiment is a so-called COB (Chip on Board) mounting in which a semiconductor light emitting element chip 64 that is a bare chip is mounted on a convex portion 21 a of a thermally conductive substrate 21.

First, the thermally conductive substrate 21 will be described.
(Thermal conductive substrate 21)
The heat conductive substrate 21 has a rectangular shape when viewed from the top, for example, and is made of a material having excellent heat conductivity. The convex portion 21a formed integrally with the heat conductive substrate 21 is continuously formed in the longitudinal direction of the heat conductive substrate 21, and the surface 21b has a width that allows the semiconductor light emitting element chip 64 to be mounted. doing.
For the thermally conductive substrate 21, a metal having excellent thermal conductivity, such as copper, aluminum, or an alloy thereof can be used. In the case of aluminum, the surface may be anodized.
The thermally conductive substrate 21 is, for example, copper, and can have a length of 150 mm and a width of 10 mm. And the width | variety of the surface 21b of the convex part 21a should just be able to mount the semiconductor light-emitting element chip | tip 64. FIG. For example, if the semiconductor light emitting element chip 64 is 350 μm × 350 μm, the width of the surface 21 b of the convex portion 21 a (the length measured in the short direction of the thermally conductive substrate 21) is one side length of the semiconductor light emitting element chip 64. It can be 1 mm longer than 350 μm.
Moreover, the thickness of the heat conductive substrate 21 can be 0.3 mm in the part of the convex part 21a, for example. Moreover, the height of the convex part 21a can be 0.15 mm, for example.

And the slit 21d is provided in the both sides | surfaces of the convex part 21a in a row in the longitudinal direction of the heat conductive board | substrate 21. As shown in FIG. A part of the wiring boards 22a and 22b is inserted into the slit 21d. Therefore, the width of the slit 21d is approximately the same as the thickness of the wiring boards 22a and 22b, and it is only necessary that a part of the wiring boards 22a and 22b is inserted into the slit 21d. Therefore, as described later, for example, when the thickness of the wiring boards 22a and 22b is 0.15 mm, the width of the slit 21d can be 0.17 mm.
Further, the depth of the slit 21d may be 0.2 mm, for example, as long as it does not hinder heat dissipation by heat conduction to the heat conductive substrate 21 generated by the semiconductor light emitting element chip 64.
The slits 21d are provided to make it easy to fix the wiring boards 22a and 22b to the thermally conductive board 21. However, as shown in FIG. 5B, the wiring boards 22 a and 22 b are fixed to the surface 21 c of the heat conductive board 21 with the adhesive layer 24. For this reason, the wiring boards 22a and 22b do not necessarily need to be inserted into the slit 21d and fixed. Therefore, it is not necessary to provide the slit 21d in the heat conductive substrate 21.
In addition, since the heat conductive substrate 21 is composed of flexible copper or the like, the light emitting unit 11 is deformed (bent) in the thickness direction of the heat conductive substrate 21 and attached to the holding body 12. Can do.

A method for manufacturing the thermally conductive substrate 21 will be described.
The heat conductive substrate 21 can be continuously formed in the longitudinal direction by rolling copper, so-called roll-to-roll. Thereby, the light emission unit 11 can be comprised cheaply.
Moreover, if the heat conductive board | substrate 21 provided with the convex part 21a can be formed by what is called roll-to-roll, the length of the heat conductive board | substrate 21 can be made variable, and the light emission unit 11 can be comprised in the length according to the use.
Thereafter, slits 21 d are formed on both side surfaces of the convex portion 21 a of the heat conductive substrate 21.
Further, the heat conductive substrate 21 is provided with a hole 27 through which a bolt for fixing the light emitting unit 11 to the holding body 12 passes.

Next, the wiring boards 22a and 22b will be described.
(Wiring boards 22a and 22b)
The wiring boards 22a and 22b are, for example, strip-shaped flat plates. The wiring board 22b has the same configuration as the wiring board 22a and is used with its orientation changed. Therefore, only the wiring board 22a will be described.
The wiring board 22a includes a base body 25, conductor patterns 23a, 23b, 23c, and 23d provided on one surface of the base body 25, conductor surfaces 23a, 23b, 23c, and 23d, and a conductor on one surface of the base body 25. And a resist film 26 covering the surface on which the patterns 23a, 23b, 23c, and 23d are not provided.
The other surface of the base body 25 of the wiring board 22a is bonded to the surface 21c of the heat conductive substrate 21 through the adhesive layer 24. A part of the wiring substrate 22a is inserted into a slit (gap) 21d provided on the side surface of the convex portion 21a of the thermally conductive substrate 21.

The conductor pattern 23a of the wiring board 22a has a strip shape and is provided from one end of the wiring board 22a to the other end along the longitudinal direction of the wiring board 22a. On the other hand, a plurality of strip-like conductor patterns 23b are provided in a row without being connected to each other so as to be parallel to the conductor pattern 23a. Then, strip-like conductor patterns 23c and 23d are respectively provided at both ends of the plurality of conductor patterns 23b provided in a row. The conductor patterns 23c and 23d are also provided so that the longitudinal direction thereof is parallel to the conductor pattern 23a.
That is, a plurality of conductor patterns 23b are arranged in a line along the long side of the wiring board 22a, and both ends thereof are sandwiched between the conductor patterns 23c and 23d.

Conductive patterns 23a, 23b, and 23c are formed on the resist film 26 that covers the surfaces of the conductive patterns 23a, 23b, 23c, and 23d of the wiring board 22a and the portions of the wiring board 22a where the conductive patterns 23a, 23b, 23c, and 23d are not provided. , 23d are exposed to openings 26a, 26b, 26c, 26d, 26e, 26f, and 26g.
More specifically, openings 26a and 26b are provided at both ends of the conductor pattern 23a. The conductor pattern 23b is provided with an opening 26e on the side close to one long side of the wiring board 22a along the longitudinal direction.
An opening 26c is provided at one end in the longitudinal direction of the conductor pattern 23c (one end in the longitudinal direction of the wiring board 22a), and an opening 26f is formed on the side close to one long side of the wiring board 22a along the longitudinal direction. Is provided.
An opening 26d is provided at one end in the longitudinal direction of the conductor pattern 23d (one end in the longitudinal direction of the wiring board 22a), and an opening 26g is formed on the side close to one long side of the wiring board 22a along the longitudinal direction. Is provided.

  The wiring substrate 22a is provided with an adhesive layer 24 on the surface 21c of the heat conductive substrate 21 so that the side provided with the openings 26e, 26f, and 26g faces the convex portion 21b side of the heat conductive substrate 21. Are fixed by bonding.

The wiring board 22b is configured by rotating the wiring board 22a by 180 °. And the wiring board 22b is adhesively fixed on the surface 21c of the heat conductive board | substrate 21 similarly to the wiring board 22a.
The conductor patterns 23a, 23b, 23c, and 23d may be determined based on the connection relationship between the light emitting unit 11 and the semiconductor light emitting element chip 64, and are not limited to the pattern shown in FIG.

Next, a method for manufacturing the wiring board 22a will be described.
As the base 25 of the wiring board 22a, for example, a glass epoxy plate can be used. The thickness of the substrate 25 of the glass epoxy plate can be 0.1 mm. By using such a thin substrate 25, the light emitting unit 11 can be bent and used in the thickness direction.

  A copper foil is attached to one surface of the base body 25. And copper foil is processed into conductor pattern 23a, 23b, 23c, 23d by conventionally well-known photolithography. The surfaces other than the conductor patterns 23a, 23b, 23c, and 23d and the conductor patterns 23a, 23b, 23c, and 23d of the base body 25 are covered with a solder resist. Thereafter, openings 26a, 26b, 26c, 26d, and 26e are formed in the solder resist so as to expose the conductor patterns 23a, 23b, 23c, and 23d on a part of the conductor patterns 23a, 23b, 23c, and 23d by conventionally known photolithography. , 26f, and 26g are formed to form the resist film 26. The resist film 26 is preferably formed of a white solder resist that can reflect light from the semiconductor light emitting element chip 64.

In the wiring boards 22a and 22b, the conductor patterns 23a, 23c, and 23d are provided in the openings 26a, 26b, 26c, and 26d, and the power source 19 (see FIG. 1) provided outside the plant cultivation apparatus 1 and other lighting apparatuses 10 Connected to the wiring boards 22a and 22b.
In the wiring boards 22a and 22b, the conductor patterns 23b, 23c, and 23d and the semiconductor light emitting element chip 64 are connected in the openings 26e, 26f, and 26g. That is, the conductor patterns 23 b, 23 c, and 23 d are connected to the p electrode and the n electrode of the semiconductor light emitting element chip 64 by the bonding wires 65.
As described above, the bonding wire 65 is arranged so that the direction of the bonding wire 65 is parallel to the axis of the holding body 12 so that no stress is applied when the light emitting unit 11 is wound around the holding body 12. In 5 (a), it is provided with a slight inclination (obliquely) from the vertical direction.

  As shown in FIG. 5A, the nine semiconductor light emitting element chips 64 have a p-electrode (denoted as “p” in FIG. 5A) and an n-electrode (also denoted as “n”). .) Are arranged so as to alternate between adjacent semiconductor light emitting element chips 64.

Next, the first sealing resin 31 and the second sealing resin 32 will be described.
(First sealing resin 31 and second sealing resin 32)
The light emitting unit 11 is provided with a first sealing resin 31 so as to cover the semiconductor light emitting element chip 64 and the bonding wire 65. Further, a second sealing resin 32 is provided so as to cover the first sealing resin 31 and the openings 26e, 26f, and 26g.
The first sealing resin 31 covers the surface of the semiconductor light emitting element chip 64 to prevent the semiconductor light emitting element chip 64 from being deteriorated due to intrusion of outside air, moisture, and the like, and covers the bonding wire 65 to cover the bonding wire 65. And the bonding wire 65 is prevented from being peeled off from the p-electrode and the n-electrode of the semiconductor light-emitting element chip 64.
On the other hand, the second sealing resin 32 covers the openings 26e, 26f, and 26g, and prevents the conductor patterns 23b, 23c, and 23d from corroding due to contact with outside air and moisture.
The second sealing resin 32 may not be covered with the first sealing resin 31 as long as the openings 26e, 26f, and 26g are not exposed, and may be between the adjacent first sealing resins 31.
Further, the second sealing resin 32 may be omitted if the first sealing resin 31 covers the openings 26e, 26f, and 26g so as not to be exposed.
That is, since the lighting device 10 for plant cultivation is installed in a high humidity environment, it is necessary to ensure moisture resistance. Therefore, in the first embodiment, the semiconductor light-emitting element chip 64 is covered with the first sealing resin 31 and the second sealing resin 32 to suppress moisture intrusion.

Here, the semiconductor light emitting element chip 64 mounted on the convex portion 21a of the thermally conductive substrate 21 will be described. In the first embodiment, the semiconductor light emitting element chip 64 is directly mounted on the convex portion 21a of the thermally conductive substrate 21 by COB (Chip on Board).
The semiconductor light emitting element chip 64 may emit any light of red, green, blue, infrared, and ultraviolet. In the light emitting unit 11, a plurality of semiconductor light emitting element chips 64 having different emission wavelengths may be mixed and used.

Next, the semiconductor light emitting element chip 64 will be described. In the first embodiment, as an example, as the semiconductor light emitting element chip 64, a semiconductor light emitting element chip that emits blue light (hereinafter referred to as a blue light emitting chip 641) and a semiconductor light emitting element chip that emits red light (hereinafter referred to as a blue light emitting chip 641). In this case, the red light emitting chip 642 is used).
The blue light emitting chip 641 and the red light emitting chip 642 may be mixedly used in the plurality of semiconductor light emitting element chips 64 of one light emitting unit 11. When the lighting device 10 includes a plurality of light emitting units 11, the light emitting unit 11 including only the blue light emitting chip 641 and the light emitting unit 11 including only the red light emitting chip 642 are used. It may be used.
When only blue light is required, only the light emitting unit 11 having the blue light emitting chip 641 is used. When only red light is required, only the light emitting unit 11 having the red light emitting chip 642 is used. That's fine.
Furthermore, you may use the semiconductor light emitting element which light-emits light of other colors suitable for plant growth or cultivation environment improvement, for example, green, yellow, infrared rays, etc.

Next, an example of the blue light emitting chip 641 and the red light emitting chip 642 will be described.
(Blue light emitting chip 641)
FIG. 6 is a cross-sectional view for explaining an example of the configuration of the blue light emitting chip 641. FIG. 7 is a top view of the blue light emitting chip 641. Here, the blue light emitting chip 641 having an emission peak wavelength of 450 nm will be described. Note that the cross-sectional view of the blue light emitting chip 641 shown in FIG. 6 corresponds to a cross-sectional view taken along line VI-VI of the top view in FIG.
The blue light emitting chip 641 is composed of a compound semiconductor. Hereinafter, a blue light emitting chip 641 having a group III nitride compound semiconductor will be described as an example.

  The first substrate 110 is made of a material different from the group III nitride semiconductor, and the group III nitride semiconductor crystal is epitaxially grown on the first substrate 110. Examples of the material constituting the first substrate 110 include sapphire, silicon carbide (silicon carbide: SiC), zinc oxide (ZnO), silicon, magnesium oxide, manganese oxide, zirconium oxide, manganese zinc iron oxide, magnesium aluminum oxide, Zirconium boride, gallium oxide, indium oxide, lithium gallium oxide, lithium aluminum oxide, neodymium gallium oxide, lanthanum strontium aluminum tantalum oxide, strontium titanium oxide, titanium oxide, hafnium oxide, tungsten oxide, molybdenum oxide, fused quartz (quartz), etc. The glass etc. are mentioned. Here, as an example, the first substrate 110 will be described as being sapphire that is transparent and from which good crystals can be obtained.

The blue light emitting chip 641 is laminated on the first substrate 110 made of sapphire, the intermediate layer 120 laminated on the first substrate 110, the underlayer 130 laminated on the intermediate layer 120, and the underlayer 130. A first n-type semiconductor layer 140, a first light-emitting layer 150 stacked on the first n-type semiconductor layer 140, and a first p-type semiconductor layer 160 stacked on the first light-emitting layer 150.
Here, the first n-type semiconductor layer 140 includes a first n-type contact layer 140a provided on the base layer 130 side and a first n-type cladding layer 140b provided on the first light emitting layer 150 side. The first light-emitting layer 150 has a structure in which barrier layers 150a and well layers 150b are alternately stacked, and one well layer 150b is sandwiched between the two barrier layers 150a. Further, the first p-type semiconductor layer 160 includes a first p-type cladding layer 160a provided on the first light emitting layer 150 side and a first p-type contact layer 160b provided on the uppermost layer. In the following description, the first n-type semiconductor layer 140, the first light emitting layer 150, and the first p-type semiconductor layer 160 are collectively referred to as a first stacked semiconductor layer 100.

In the blue light emitting chip 641, the transparent positive electrode 170 is stacked on the first p-type contact layer 160 b of the first p-type semiconductor layer 160, and the first p electrode 210 is formed on the upper surface 170 c of the transparent positive electrode 170. Further, the first n-electrode 240 is stacked on the semiconductor layer exposed surface 140 c formed on the first n-type contact layer 140 a of the first n-type semiconductor layer 140.
Furthermore, the blue light emitting chip 641 is configured such that the surface of the transparent positive electrode 170, the surface and side surfaces of the first stacked semiconductor layer 100, the underlayer 130, and the first p electrode 210 and the first n electrode 240 are excluded. The 1st protective layer 180 which covers the side surface of the intermediate | middle layer 120 is provided.

  In the blue light emitting chip 641, the first stacked semiconductor layer 100 (more specifically, the first p-type semiconductor layer 160, the first light-emitting layer 150, and the first n-type semiconductor is interposed via the first p electrode 210 and the first n electrode 240. The first light emitting layer 150 emits blue light by passing a current through the layer 140). In addition to the transparent positive electrode 170 side, the first light emitting layer 150 emits blue light also on the first substrate 110 side and the side of the blue light emitting chip 641 (layer direction of the first light emitting layer 150).

A method for manufacturing the blue light emitting chip 641 will be described.
First, an intermediate layer 120 is formed on a first substrate 110 made of sapphire having a predetermined diameter and thickness using a sputtering apparatus.
Subsequently, the base layer 130 and the first n-type contact layer 140a are formed on the first substrate 110 on which the intermediate layer 120 is formed by the MOCVD apparatus, and the first n-type cladding layer 140b is formed on the first n-type contact layer 140a. Form. Further, the first light emitting layers 150, that is, the barrier layers 150a and the well layers 150b are alternately formed on the first n-type cladding layer 140b, and the first p-type cladding layer 160a is formed on the first light emitting layer 150. A first p-type contact layer 160b is formed on the 1p-type cladding layer 160a.
Further, the transparent positive electrode 170 is laminated on the surface 160c of the first p-type contact layer 160b. Further, the semiconductor layer exposed surface 140c is formed on the first n-type contact layer 140a by etching or the like. Then, the first p electrode 210 is provided on the upper surface 170c of the transparent positive electrode 170, and the first n electrode 240 is provided on the semiconductor layer exposed surface 140c. Next, the first protective layer 180 is formed.
Thereafter, the surface of the first substrate 110 opposite to the surface on which the base layer 130 is formed is ground and polished until it reaches a predetermined thickness.
Then, the blue light emitting chip 641 is obtained by cutting the wafer whose thickness of the first substrate 110 is adjusted into, for example, a 350 μm square.
Note that the intermediate layer 120 is not necessarily provided when the base layer 130 with excellent crystallinity can be directly formed on the first substrate 110.

(Red light emitting chip 642)
FIG. 8 is a cross-sectional view for explaining an example of the configuration of the red light emitting chip 642. FIG. 9 is a top view of the red light emitting chip 642. Here, a red light-emitting chip 642 having a high-efficiency AlGaInP light-emitting layer and having an emission peak wavelength of 660 nm will be described. Note that the cross-sectional view of the red light emitting chip 642 shown in FIG. 8 corresponds to a cross-sectional view taken along line VIII-VIII in the top view of FIG.

As shown in FIG. 8, the red light emitting chip 642 is configured by bonding the second stacked semiconductor layer 300 and the second substrate 310. The second stacked semiconductor layer 300 includes a second p-type contact layer 320, a second p-type semiconductor layer 330 that functions as a lower cladding layer, a second light emitting layer 340, and a second n-type semiconductor layer 350 that functions as an upper cladding layer. Has been configured.
The red light emitting chip 642 includes the second n electrode 400 formed on the upper surface 350c of the second n-type semiconductor layer 350, the second n-type semiconductor layer 350, the second light-emitting layer 340, and the second p-type of the second stacked semiconductor layer 300. A second p-electrode 410 formed on the upper surface 320c of the second p-type contact layer 320 exposed by cutting a part of the semiconductor layer 330;
As shown in FIG. 9, the second n-electrode 400 is connected to the wiring 401 formed on the second n-type semiconductor layer 350 in a lattice shape, for example. The wiring 401 is formed of a thin line with the same material as the second n-electrode 400 so as not to affect the extraction of light from the second n-type semiconductor layer 350. Thereby, the potential distribution of the second n-type semiconductor layer 350 is made more uniform than the case where the wiring 401 is not provided, and the distribution of light emission from the second light emitting layer 340 is made uniform.

  Further, the red light emitting chip 642 has the second p-type contact layer 320, the second p-type semiconductor layer 330, the second light-emitting layer 340, and the second n-type semiconductor except for a part of the surfaces of the second n-electrode 400 and the second p-electrode 410. A second protective layer 360 covering the layer 350 is provided.

  In the red light emitting chip 642, the second n-electrode 400 is a negative electrode, the second p-electrode 410 is a positive electrode, and the second stacked semiconductor layer 300 (more specifically, the second p-type contact layer 320, the second p-type semiconductor is interposed therebetween). The second light emitting layer 340 emits light by passing a current through the layer 330, the second light emitting layer 340, and the second n-type semiconductor layer 350). The generated light is extracted to the outside of the red light emitting chip 642 from the upper surface 350c of the second n-type semiconductor layer 350 where the second n-electrode 400 and the wiring 401 are not provided and the side surface of the second substrate 310.

  As shown in FIG. 8, the side surface of the second substrate 310 has a vertical surface 310 a that is substantially perpendicular to the upper surface of the second n-type semiconductor layer 350, which is a light extraction surface, on the side close to the second stacked semiconductor layer 300. The inclined surface 310b is formed on the inner side of the second substrate 310 on the side far from the second stacked semiconductor layer 300. Thereby, the light emitted from the second light emitting layer 340 to the second substrate 310 side can be efficiently extracted to the outside.

The blue light-emitting chip 641 and the red light-emitting chip 642 described above are examples, and it is obvious that semiconductor light-emitting element chips having other structures and semiconductor light-emitting element chips having other light emission peak wavelengths can be used.
As described above, the blue light-emitting chip 641 and the red light-emitting chip 642 may be used in accordance with the application. Therefore, when the blue light emitting chip 641 and the red light emitting chip 642 are not distinguished from each other, they are expressed as the semiconductor light emitting element chip 64, and the first p electrode 210 in the blue light emitting chip 641 and the second p electrode 410 in the red light emitting chip 642 are respectively represented. When not distinguished, the p electrode, the first n electrode 240 in the blue light emitting chip 641, and the second n electrode 400 in the red light emitting chip 642 are denoted as n electrodes when not distinguished from each other.

Next, a manufacturing method and operation of the light emitting unit 11 will be described with reference to FIGS.
<Manufacturing method of light emitting unit 11 and operation of light emitting unit 11>
The wiring boards 22a and 22b are bonded via the adhesive layer 24 on the surface 21c of the heat conductive substrate 21 provided with the convex portions 21a. At this time, part of the wiring boards 22 a and 22 b is inserted into the slits 21 d of the heat conductive board 21.

  The adhesive layer 24 is preferably an adhesive having excellent thermal conductivity. Moreover, if the heat conductive board | substrate 21 is a metal etc., it will also have electrical conductivity while having thermal conductivity. If the substrate 25 of the wiring boards 22a and 22b is a glass epoxy plate, it has electrical insulation. Therefore, even if the adhesive layer 24 does not have electrical insulation, the conductor patterns 23a, 23b, 23c, and 23d of the wiring boards 22a and 22b do not short-circuit with the thermally conductive board 21. However, it is preferable that the adhesive layer 24 has electrical insulation.

Next, the semiconductor light emitting element chip 64 (blue light emitting chip 641 and / or red light emitting chip 642) is bonded and fixed to the surface 21b of the convex portion 21a of the heat conductive substrate 21. For bonding and fixing the semiconductor light emitting element chip 64 to the convex portion 21a, an epoxy resin-based or silicone resin-based adhesive, or a die bond material such as silver paste can be used.
The first p electrode 210 and the first n electrode 240 of the blue light emitting chip 641 or the second p electrode 410 and the second n electrode 400 of the red light emitting chip 642 are connected to the openings 26e, 26f, and 26g of the wiring boards 22a and 22b by the bonding wires 65. Are connected to the conductor patterns 23b, 23c, and 23d. For this reason, the blue light emitting chip 641 or the red light emitting chip 642 is adhesively fixed to a predetermined position of the convex portion 21a of the heat conductive substrate 21 corresponding to the openings 26e, 26f, and 26g of the wiring substrates 22a and 22b. The

Thereafter, the blue light emitting chip 641 or the red light emitting chip 642 and the bonding wire 65 are sealed with the first sealing resin 31. Further, the openings 26e, 26f, and 26g are sealed with the second sealing resin 32.
As the first sealing resin 31 and the second sealing resin 32, various resins that are transparent with respect to the emission wavelength of the blue light emitting chip 641 or the red light emitting chip 642 may be applied.
The first sealing resin 31 and the second sealing resin 32 may be transparent resins in which phosphors that absorb light emitted from the blue light emitting chip 641 and emit light having a longer wavelength are uniformly dispersed. . For example, a green phosphor that emits green light by absorbing blue light emitted by the blue light emitting chip 641 and a red phosphor that absorbs blue light emitted by the blue light emitting chip 641 and emits red light may be included. The blue light emitted from the blue light emitting chip 641, the green light emitted from the green phosphor contained in the transparent resin, and the red light emitted from the red phosphor contained in the transparent resin are aligned in the three primary colors of blue, green, and red. . Thereby, white light may be emitted from the upper surface of the first sealing resin 31 and / or the second sealing resin 32. Further, a yellow phosphor may be used instead of the red phosphor and the green phosphor.

The first sealing resin 31 is made of an uncured transparent resin paste (which may include a phosphor) by a potting method using a discharge device, so that the semiconductor light emitting element chip 64 on the convex portion 21a of the thermally conductive substrate 21 is formed. Potting (dropping) is performed so as to cover the semiconductor light emitting element chip 64 and the bonding wire 65 at the position where the adhesive is fixed. Next, the first sealing resin 31 is formed by curing the uncured transparent resin paste. The curing process may be performed by heating or ultraviolet irradiation, for example. As the first sealing resin 31, an epoxy resin-based sealing material having excellent rigidity can be used.
Further, the openings 26e, 26f, and 26g that are not covered with the first sealing resin 31 are sealed with the second sealing resin 32. As the second sealing resin 32, a silicone resin-based sealing material having excellent flexibility can be used.
The second sealing resin 32 may be formed in the same manner as the first sealing resin 31. In order to prevent the uncured first sealing resin 31 and the uncured second sealing resin 32 from mixing, the second sealing resin 32 is formed by the second first sealing resin. It is preferable to carry out after 31 is cured.

Here, the reason for using the first sealing resin 31 and the second sealing resin 32 will be described.
If the heat conductive substrate 21 is, for example, copper having a thickness of less than 1 mm, the heat conductive substrate 21 can be easily bent in the thickness direction, and is also a good and optimum material for heat conduction. Similarly, aluminum alloys are desirable materials. For this reason, the heat conductive substrate 21 can be deformed and brought into close contact with the cylindrical holder 12.
Therefore, even when the heat conductive substrate 21 is deformed, the semiconductor light emitting element chip 64 and the bonding wire 65 are fixed by the first sealing resin 31 having excellent rigidity. It is suppressed that stress is applied to the wire 65. On the other hand, the space between the semiconductor light emitting element chips 64 sealed with the second sealing resin 32 excellent in flexibility can be deformed following the deformation of the heat conductive substrate 21.
That is, even if the thermally conductive substrate 21 is deformed (bent) and brought into close contact with the holding body 12, the semiconductor light emitting element chip 64 and the bonding wire 65 covered with the first sealing resin 31 having excellent rigidity are deformed. do not do. Therefore, it is suppressed that the electrical connection between the semiconductor light emitting element chip 64 and the wiring boards 22a and 22b is impaired. Thereby, the semiconductor light emitting element chip 64 operates stably. On the other hand, since the second sealing resin 32 flexibly follows the deformation (bending) of the heat conductive substrate 21, it does not hinder the bending of the heat conductive substrate 21.
As described above, since the heat conductive substrate 21 can be flexibly used, the lighting device 10 can be deformed (bent) in the thickness direction of the heat conductive substrate 21 and attached to the holding body 12. it can.

As shown in FIG. 5B, in the first embodiment, the semiconductor light emitting element chip 64 is on the convex portion 21 a of the thermally conductive substrate 21. And the thickness of wiring board 22a and 22b is smaller than the height of the convex part 21a. Therefore, it is suppressed that the light emitted to the side from the semiconductor light emitting element chip 64 provided on the convex portion 21a is obstructed by the wiring boards 22a and 22b. That is, the surface of the convex portion 21a is preferably the same as the surface including the surfaces of the wiring substrates 22a and 22b or protrudes from the surface including the surfaces of the wiring substrates 22a and 22b.
When the amount of light hindered by the wiring boards 22a and 22b is small, the heat conductive substrate 21 does not have to have the convex portion 21a.

Next, the operation of the light emitting unit 11 will be described with reference to FIG.
In the light emitting unit 11, a plurality of semiconductor light emitting element chips 64 mounted on the surface 21b of the convex portion 21a of the thermally conductive substrate 21 are connected in series via the conductor patterns 23b, 23c, and 23d of the wiring substrates 22a and 22b. Has been. For example, in FIG. 5A, the p electrode (“p”) of the semiconductor light emitting element chip 64-1 is connected to the conductor pattern 23c of the wiring board 22a, and the n electrode (“n”) is connected to the wiring board 22b. It is connected to the conductor pattern 23d. The p-electrode (“p”) of the semiconductor light-emitting element chip 64-2 is connected to the conductor pattern 23d of the wiring board 22b. The n electrode (“n”) of the semiconductor light emitting element chip 64-2 is connected to the conductor pattern 23b. A p-electrode (“p”) of the semiconductor light emitting element chip 64-3 is connected to the conductor pattern 23b. As described above, in the semiconductor light emitting element chips 64-1 to 64-9, the p electrode and the n electrode are connected to each other. That is, the semiconductor light emitting element chips 64-1 to 64-9 are connected in series.
Thus, when the opening 26c of the conductor pattern 23c of the wiring board 22a is positive and the opening 26c of the wiring board 22b is negative and connected to the power source 19 (see FIG. 1), the semiconductor light emitting element chips 64-1 to 64-9 are connected. On the other hand, the forward current of the same value flows.
Here, the plurality of semiconductor light emitting element chips 64 of the light emitting unit 11 are connected in series. However, each of the plurality of semiconductor light emitting element chips 64 includes a plurality of semiconductor light emitting element chips 64 provided in parallel. Also good. At this time, the current flowing through each semiconductor light emitting element chip 64 is a value obtained by dividing the value of the current flowing from the opening 26c of the wiring substrate 22a into the opening 26c of the wiring substrate 22b by the number of semiconductor light emitting element chips 64 provided in parallel. It becomes.

Next, how to use the wiring boards 22a and 22b will be further described.
The size of the heat conductive substrate 21 in the longitudinal direction is, for example, 150 mm. As described above, since the heat conductive substrate 21 can be formed by roll-to-roll, the heat conductive substrate 21 having a length exceeding 150 mm can be manufactured. However, in order to realize the long illuminating device 10, a plurality of light emitting units 11 shown in FIGS. 5A and 5B may be used. At this time, it is preferable that a plurality of light emitting units 11 can easily form a longer light emitting unit 11. For this purpose, it is preferable that the wiring boards 22a and 22b of the light emitting unit 11 are electrically connected to each other by a simple method.

  FIG. 10 is a diagram showing a light emitting unit 11 composed of two light emitting units 11a and 11b. Here, the right side in the figure is the light emitting unit 11a, and the left side is the light emitting unit 11b. The light emitting units 11a and 11b are assumed to be the light emitting units 11 shown in FIGS. 5 (a) and 5 (b). Therefore, detailed description of each of the light emitting units 11a and 11b is omitted, and an electrical connection relationship between the light emitting units 11a and 11b will be described.

First, the wiring boards 22a and 22b of the light emitting units 11a and 11b will be described.
The conductor pattern 23a and the conductor pattern 23c of the wiring board 22a of the light emitting unit 11a are connected by a connection wiring 28a through the opening 26a and the opening 26c, respectively. The same applies to the wiring board 22b of the light emitting unit 11a. The same applies to the wiring boards 22a and 22b of the light emitting unit 11b.
Next, connection between the light emitting unit 11a and the light emitting unit 11b will be described.
The conductor pattern 23a of the wiring board 22a of the light emitting unit 11a and the conductor pattern 23a of the wiring board 22a of the light emitting unit 11b include an opening 26b of the wiring board 22a of the light emitting unit 11a and an opening 26a of the wiring board 22a of the light emitting unit 11b. Through the connection wiring 28b.
Similarly, the conductor pattern 23a of the wiring board 22b of the light emitting unit 11a and the conductor pattern 23a of the wiring board 22a of the light emitting unit 11b are the opening 26a of the wiring board 22b of the light emitting unit 11a and the opening of the wiring board 22b of the light emitting unit 11b. It is connected by connection wiring 28c via 26b.
That is, the conductor patterns 23a of the wiring boards 22a of the light emitting unit 11a and the light emitting unit 11b are connected so as to have the same potential. Similarly, the conductor pattern 23a of each wiring board 22b of the light emitting unit 11a and the light emitting unit 11b is also connected to have the same potential.

  The connection wirings 28a, 28b, and 28c may be formed by fixing plate-like or bar-like metal pieces such as copper to the conductor patterns 23a and 23c with solder or the like in the openings 26a, 26b, and 26c. Further, the connection wirings 28a, 28b, and 28c may be bonding wires.

The conductor pattern 23a of the wiring board 22a of the light emitting unit 11a is connected to the positive terminal of the power source 19 (see FIG. 1) through the opening 26a, and the conductor pattern 23a of the wiring board 22b of the light emitting unit 11b is connected to the conductor pattern 23a through the opening 26a. To the negative terminal of the power source 19. A current is supplied in series from the power source 19 to the plurality of semiconductor light emitting element chips 64 mounted on the light emitting unit 11a. At the same time, current is supplied in series from the power supply 19 to the plurality of semiconductor light emitting element chips 64 mounted on the light emitting unit 11b. That is, the light emitting unit 11a and the light emitting unit 11b are driven in parallel.
For example, if the forward voltage (Vf) for energizing the semiconductor light emitting element chip 64 with 20 mA is 2 V and the number of semiconductor light emitting element chips 64 connected in series is 23, the power supply 19 supplies 46 V. Good.
The current supplied from the power source 19 depends on the current flowing through the semiconductor light emitting element chip 64. For example, when the current flowing through one semiconductor light emitting element chip 64 is 100 mA and the light emitting unit 11 includes two light emitting units 11a and 11b that are driven in parallel, the current is 200 mA.
The light emitting unit 11 is composed of two light emitting units 11a and 11b, but may be three or more.
Although the light emitting unit 11a and the light emitting unit 11b are driven in parallel, they may be connected in series and driven. By changing the connection relationship of the conductor patterns 23a, 23b, 23c, and 23d, various combinations can be handled.
In addition, the light emitting unit (light emitting unit 11a and / or 11b) has a known circuit such as a resistor for limiting overcurrent, a capacitor for noise suppression, a control switch, a timer, or the like corresponding to the use condition and use environment. Parts and control parts can be added.
From the above description of the electrical connection, when the back surface of the semiconductor light emitting element chip 64 is insulated or has high resistance with respect to the n and p electrodes, the semiconductor light emitting element chip 64 and the light emitting unit (light emitting units 11a and / or 11b). ) Is desirable because it increases the degree of freedom in series and parallel. When the degree of freedom increases, there is an advantage that selection of a power supply voltage and a rated current is widened, and a general-purpose power supply can be easily used. In addition, the electric circuit and the thermally conductive substrate 21 are independent, and there is an advantage that there is no restriction on the cooling method due to the electric circuit.

  Since the wiring boards 22a and 22b have conductor patterns 23a provided along the longitudinal direction of the wiring boards 22a and 22b as shown in FIG. 5A, the plurality of lighting devices 10 are simply connected. be able to.

Next, the illumination device 10 will be described.
<Lighting device 10>
As shown in FIG. 1, the illuminating device 10 is configured by attaching the light emitting unit 11 around the holding body 12. Since the heat conductive substrate 21 is made of flexible copper or the like, the light emitting unit 11 is deformed (bent) in the thickness direction of the heat conductive substrate 21 and attached in close contact with the holding body 12. Can do.
The lighting device 10 may be fixed to the holding body 12 by passing a bolt through a hole 27 provided in the thermally conductive substrate 21 for passing through. The holding body 12 may be provided with holes corresponding to the holes 27 provided in the heat conductive substrate 21 for passing through.

As described above, the semiconductor light emitting element chip 64 is bonded and fixed on the heat conductive substrate 21 having excellent heat conductivity. Therefore, the heat generated by the semiconductor light emitting element chip 64 is first dissipated to the heat conductive substrate 21 by heat conduction. Next, the heat generated by the semiconductor light emitting element chip 64 is dissipated from the heat conductive substrate 21 to the holding body 12 by heat conduction. Since the holding body 12 is excellent in thermal conductivity and has a large heat capacity, it can dissipate heat generated by the light emitting unit 11. Further, as described above, the heat radiation of the light emitting unit 11 can be further promoted by air-cooling or liquid-cooling the holding body 12.
That is, in the first embodiment, the heat generated by the semiconductor light emitting element chip 64 mounted on the lighting device 10 can be efficiently dissipated, and an increase in the temperature of the lighting device 10 can be suppressed. Further, by rotating the lighting device 10, the light emitted from the lighting device 10 can be evenly applied to the plants 2 arranged surrounding the lighting device 10.
Moreover, since the heat conductive board | substrate 21 can be manufactured continuously, the illuminating device 10 is realizable at low cost.

[Second Embodiment]
The second embodiment is different from the first embodiment in the configuration of the light emitting unit 11. In other words, in the first embodiment, the semiconductor light emitting element chip 64 that is a bare chip is mounted on the convex portion 21 a of the thermally conductive substrate 21. In the second embodiment, a plurality of light emitting device packages 20 each mounting a semiconductor light emitting device chip 64 are mounted on the convex portion 21 a of the thermally conductive substrate 21. Also in the second embodiment, the semiconductor light emitting element chip 64 may be either the blue light emitting chip 641 or the red light emitting chip 642.

FIG. 11 is a diagram illustrating an example of the light emitting unit 11 of the illumination device 10 to which the second embodiment is applied. As with the light emitting unit 11 in the first embodiment, the light emitting unit 11 is provided on one surface with a thermally conductive substrate 21 having a convex portion 21a formed integrally with the surface 21b of the convex portion 21a. The light emitting device package 20 as an example of a plurality of light emitting components, and wiring boards 22 a and 22 b provided on the surface 21 c of the thermally conductive substrate 21 other than the convex portions 21 a via the adhesive layer 24 are provided. The light emitting element package 20 has a plurality of semiconductor light emitting element chips 64 mounted thereon as shown in FIG. And the convex part 21a formed integrally with the heat conductive board | substrate 21 is comprised continuously in the longitudinal direction of the heat conductive board | substrate 21, and the surface 21b has the width | variety in which the light emitting element package 20 can be mounted. ing. In addition, in the heat conductive substrate 21 in this Embodiment, the slit is not provided in the side surface of the convex part 21a.
In the following, in the light emitting unit 11 of the lighting device 10 to which the second embodiment is applied, a description will be given centering on portions that are different from the first embodiment, and the same portions are denoted by the same reference numerals and detailed. The detailed explanation is omitted.

  The heat conductive substrate 21 is, for example, a plate having a rectangular planar shape, and is made of a material having excellent heat conductivity. The surface 21b of the convex portion 21a formed integrally with the heat conductive substrate 21 can be mounted with a mounting portion 63 (see FIG. 12 described later) to which the semiconductor light emitting element chip 64 is bonded and fixed in the light emitting element package 20. Have a wide width. Other configurations are the same as those of the thermally conductive substrate 21 in the first embodiment.

The wiring boards 22a and 22b are, for example, strips like the wiring boards 22a and 22b in the first embodiment. Also in this embodiment, since the wiring board 22a and the wiring board 22b have the same configuration, the wiring board 22a will be described below.
The wiring board 22a includes conductor patterns 23a, 23b, 23c, 23d, and 23e.
The conductor pattern 23a has a strip shape and is provided from one end to the other end of the wiring board 22a along the long side of the wiring board 22a. On the other hand, the E-shaped conductor patterns 23b and 23e are arranged in a row so as to be parallel to the longitudinal direction of the conductor pattern 23a without being connected to each other alternately so that the horizontal "E" meshes with each other. Are provided in plurality. Note that both end portions of the row of the plurality of conductor patterns 23b and 23e provided in a row form conductor patterns 23b.
Further, strip-like conductor patterns 23c and 23d each having one end in a U-shape are provided so as to sandwich the row of the plurality of conductor patterns 23b and 23e. The conductor patterns 23c and 23d are also provided so that the longitudinal direction thereof is parallel to the longitudinal direction of the conductor pattern 23a.

The surface of the conductor patterns 23a, 23b, 23c, 23d, 23e of the wiring board 22a and the portion of the wiring board 22a where the conductor patterns 23a, 23b, 23c, 23d, 23e are not provided are covered with a resist film 26 (not shown). Yes.
The resist film 26 is provided with openings 26a, 26b, 26c, and 26d that expose portions of the conductor patterns 23a, 23c, and 23d. Further, the resist film 26 is connected to lead portions 62a, 62b, 62c, 62d, 62e, and 62f (see FIG. 12 described later) of the light emitting element package 20 and conductor patterns 23b, 23c, 23d, and 23e. An opening (not shown) is provided.
More specifically, openings 26a and 26b are provided at both ends of the conductor pattern 23a. An opening 26c is provided at one end in the longitudinal direction of the conductor pattern 23c, and an opening 26d is provided at one end in the longitudinal direction of the conductor pattern 23d.

The light emitting device package 20 is bonded and fixed to the convex portion 21 a of the thermally conductive substrate 21 in the mounting portion 63 on which the semiconductor light emitting device chip 64 is mounted. The lead portions 62a, 62b, 62c, 62d, 62e, and 62f of the light emitting element package 20 are connected to the conductor patterns 23b, 23c, 23d, and 23e.
The lead portions 62a, 62b, 62c, 62d, 62e, and 62f of the light emitting element package 20 are connected to the p side (“p” in FIG. 11) depending on the connection relationship between the p electrode and the n electrode of the mounted semiconductor light emitting element chip 64. And n side (indicated as “n” in FIG. 11).

  FIG. 12 is a diagram illustrating an example of the configuration of the light emitting element package 20. 12A is a top view of the light-emitting element package 20, and FIG. 12B is a cross-sectional view of the light-emitting element package 20 taken along the line XIIB-XIIB in FIG.

  The light-emitting element package 20 includes a resin container 61 in which a recess 61a is formed in a planar opening 71, and six lead parts 62a, 62b, 62c, 62d, 62e, and 62f integrated with the resin container 61. And a mounting portion 63 and four semiconductor light emitting element chips 64a, 64b, 64c, and 64d mounted on the mounting portion 63. The semiconductor light emitting element chips 64a, 64b, 64c, and 64d may be either the blue light emitting chip 641 or the red light emitting chip 642.

The resin container 61 is formed by injection molding a thermoplastic resin (referred to as white resin in the following description) containing a white pigment in the lead portions 62a, 62b, 62c, 62d, 62e, 62f and the mounting portion 63. Has been.
In addition, a material with sufficient heat resistance is selected for the white resin so that it can cope with a process requiring high temperature such as solder reflow. PPA (polyphthalamide) is most commonly used as the base resin, but may be a liquid crystal polymer, an epoxy resin, polystyrene, or the like. Among these, in this embodiment, nylon 4T, nylon 6T, nylon 6I, nylon 9T, and nylon M5T, which are copolymers of diamine and isophthalic acid or terephthalic acid, can be particularly preferably used as PPA.

  The recess 61 a provided in the resin container 61 includes a bottom surface 70 having a rectangular shape, an opening portion 71 having a rectangular shape, and a wall surface 80 rising from the periphery of the bottom surface 70 toward the opening portion 71. Here, the bottom surface 70 is composed of the lead portions 62a, 62b, 62c, 62d, 62e, 62f exposed to the recess 61a and the white resin of the resin container 61 in the gap between the mounting portion 63. On the other hand, the wall surface 80 is made of a white resin constituting the resin container 61. The shape of the bottom surface 70 may be any of a circle, a rectangle, an ellipse, and a polygon. The shape of the opening 71 may be any of a circle, a rectangle, an ellipse, and a polygon, and may be the same as the bottom shape.

The semiconductor light emitting element chips 64a, 64b, 64c, and 64d are bonded and fixed to the mounting portion 63 disposed on the bottom surface 70 of the recess 61a with a die bond material made of silicone resin or epoxy resin.
12A, the p-electrode of the semiconductor light-emitting element chip 64a has the lead electrode 62a described as “p”, the n-electrode of the semiconductor light-emitting element chip 64a has “ A lead wire 62b described as “n” is connected by a bonding wire 65. Similarly, the p-electrode of the semiconductor light-emitting element chip 64b is connected to the lead part 62c described as “p”, and the n-electrode of the semiconductor light-emitting element chip 64b is connected to the lead part 62b described as “n” by the bonding wire 65. Has been. The p-electrode of the semiconductor light-emitting element chip 64c is connected to the lead part 62e described as “p”, and the n-electrode of the semiconductor light-emitting element chip 64c is connected to the lead part 62d described as “n” by the bonding wire 65. . The p-electrode of the semiconductor light-emitting element chip 64d is connected to the lead part 62e indicated by “p”, and the n-electrode of the semiconductor light-emitting element chip 64d is connected to the lead part 62f indicated by “n” by the bonding wire 65. .
That is, the lead part 62b is connected to the n electrodes of the semiconductor light emitting element chips 64a and 64b in common. The lead part 62e is connected to the p electrodes of the semiconductor light emitting element chips 64c and 64d in common.
That is, in the light emitting device package 20, the lead portions 62a, 62b, and 62c shown on the left side of FIG. 12A are in the order of “p”, “n”, and “p”, whereas the right side of FIG. Lead portions 62d, 62e, and 62f are in the order of “n”, “p”, and “n”, and the relationship between “p” and “n” is reversed.

  Here, the lead portions 62a, 62b, 62c, 62d, 62e, 62f and the mounting portion 63 are metal plates having a thickness of about 0.1 to 0.5 mm, and are based on a metal such as a copper alloy, and the surface thereof. A silver plating layer is formed by silver plating. That is, the mounting portion 63 is made of a metal having excellent thermal conductivity.

  The number of semiconductor light emitting element chips 64 is not limited to four, and may be less than four or more than four.

The opening 71 of the resin container 61 of the light emitting device package 20 is covered with a transparent member 67 bonded to a seal layer 66 provided on the surface 61 b of the resin container 61. The transparent member 67 may be any member as long as it has a high transmittance of light emitted from the semiconductor light emitting element chip 64, and glass, acrylic resin, or the like can be used.
Instead of covering the opening 71 with the transparent member 67 via the sealing layer 66, the semiconductor light emitting element chip 64 and the first sealing resin 31 or / and the second sealing resin 32 in the first embodiment are used. The bonding wire 65 may be covered and sealed.

Here, the manufacturing method and operation of the light emitting unit 11 will be described with reference to FIGS.
By setting the opening 26c of the wiring board 22a to be positive and the opening 26d to be negative, a current flows in series to the semiconductor light emitting element chips 64 mounted on the plurality of light emitting element packages 20.
Below, it demonstrates concretely.
In the second embodiment, as shown in FIG. 11, a plurality (eight in FIG. 11) of light emitting element packages 20 are arranged so that the directions of light emitting element packages 20 are adjacent to each other. In the following description, when the eight light emitting element packages 20 are distinguished, they are expressed as light emitting element packages 20-1 to 20-8.
That is, as shown in FIG. 11, the eight light emitting device packages 20-1 to 20-8 of the lighting device 10 are in the direction of the lead portions 62 a, 62 b, 62 c, 62 d, 62 e, 62 f in order from the right in FIG. Are alternately arranged.
Thereby, the conductor pattern 23c of the wiring board 22a is connected to the lead portion 62e (“p”) of the light emitting element package 20-1, and is connected to the p electrodes of the semiconductor light emitting element chips 64c and 64d. The n electrodes of the semiconductor light emitting device chips 64c and 64d are connected to the lead portions 62d and 62f (“n”), and the lead portions 62a and 62a of the light emitting device package 20-2 are connected via the conductor pattern 23b of the wiring board 22a. 62c ("p") and connected to the p electrodes of the semiconductor light emitting device chips 64a and 64b of the light emitting device package 20-2. Then, the n electrodes of the semiconductor light emitting device chips 64a and 64b of the light emitting device package 20-2 are connected to the p electrodes of the semiconductor light emitting device chips 64c and 64d of the light emitting device package 20-3 through the conductor pattern 23e of the wiring board 22a. It is connected.
The lead portions 62b to which the n electrodes of the semiconductor light emitting element chips 64a and 64b of the light emitting element package 20-8 are connected are connected to the conductor pattern 23d of the wiring board 22a.
Therefore, if the power supply 19 (see FIG. 1) is connected so that the conductor pattern 23c of the wiring board 22a is positive and the conductor pattern 23d of the wiring board 22a is negative, the semiconductor of the light emitting element packages 20-1 to 20-8. A current flows through the light emitting element chip 64 in the forward direction, and the semiconductor light emitting element chip 64 emits light.

That is, the semiconductor light emitting element chips 64c and 64d of the light emitting element package 20-1 are connected in parallel, and the semiconductor light emitting element chips 64a and 64b of the light emitting element package 20-2 are connected in parallel. The semiconductor light emitting element chips 64c and 64d connected in parallel to the light emitting element package 20-1 and the semiconductor light emitting element chips 64a and 64b connected in parallel to the light emitting element package 20-2 are connected in series. Yes.
In this manner, the pair of semiconductor light emitting element chips 64a and 64b or the pair of 64c and 64d connected in parallel to each of the light emitting element packages 20-1 to 20-8 is connected in series. Two pairs of semiconductor light emitting element chips 64a and 64b (64c and 64d) are connected in series in eight stages.

The mounting portion 63 of the light emitting element package 20 is bonded and fixed to the convex portion 21a of the heat conductive substrate 21 by solder or the like. The lead portions 62a, 62b, 62c, 62d, 62e, and 62f of the light emitting device package 20 are openings in which the conductor patterns 23b, 23c, 23d, and 23e of the wiring boards 22a and 22b are provided in the resist film 26 by soldering or the like. Connected through. In addition, since the mounting part 63 of the light emitting element package 20 and the convex part 21a of the heat conductive substrate 21 do not require electrical connection, the mounting part 63 of the light emitting element package 20 includes an epoxy resin system, a silicone resin system, or the like. The die bonding material may be bonded and fixed to the convex portion 21a of the thermally conductive substrate 21.
As described above, since the light emitting element package 20 is mounted on the convex portion 21a of the heat conductive substrate 21 by the mounting portion 63, the surfaces in contact with the convex portion 21a of the mounting portion 63 are the lead portions 62a, 62b, 62c, 62d. 62e and 62f are provided on the back side, that is, on the transparent member 67 side of the light emitting element package 20, from the surfaces contacting the conductor patterns 23b, 23c, 23d and 23e of the wiring boards 22a and 22b.

  In the second embodiment, as shown in FIG. 11, the direction of the light emitting element package 20 is not inclined with respect to the short side direction of the thermally conductive substrate 21. This is because the lead portions 62a, 62b, 62c, 62d, 62e, 62f of the light emitting device package 20 and the conductor patterns 23b, 23c, 23d, 23e of the wiring boards 22a and 22b are connected by solder or the like, and the holding body 12 This is because even if the heat conductive substrate 21 is bent along the surface, the connection is not likely to be defective.

The same applies to the wiring board 22b, in which the semiconductor light emitting element chips 64a and 64b of the light emitting element package 20-1 are connected in parallel, and the semiconductor light emitting element chips 64c and 64d of the light emitting element package 20-2 are connected in parallel. Has been. The semiconductor light emitting element chips 64a and 64b connected in parallel to the light emitting element package 20-1 and the semiconductor light emitting element chips 64c and 64d connected in parallel to the light emitting element package 20-2 are connected in series. Yes.
That is, in the wiring board 22a, the pair of the semiconductor light emitting element chips 64a and 64b or the pair of 64c and 64d that are not connected are respectively connected in series.
In addition, the structure of the illuminating device 10 is the same as that of 1st Embodiment. That is, the illuminating device 10 is configured by attaching the light emitting unit 11 to the holding body 12 as shown in FIG. The thermally conductive substrate 21 is made of flexible copper or the like, and the light emitting unit 11 is deformed (bent) in the thickness direction of the thermally conductive substrate 21 and attached to the holding body 12 in close contact. it can.
The lighting device 10 may be fixed to the holding body 12 by passing a bolt through a hole 27 provided in the thermally conductive substrate 21 for passing through. The holding body 12 may be provided with holes corresponding to the holes 27 provided in the heat conductive substrate 21 for passing through.

As described above, the semiconductor light emitting element chips 64a, 64b, 64c, and 64d are mounted on the mounting part 63 of the light emitting element package 20 having excellent thermal conductivity, and the mounting part 63 is bonded and fixed onto the thermal conductive substrate 21. ing. Thereby, the heat generated by the semiconductor light emitting element chips 64a, 64b, 64c, and 64d is radiated to the thermally conductive substrate 21 through the mounting portion 63 by heat conduction. Next, heat generated by the semiconductor light emitting element chips 64a, 64b, 64c, and 64d is radiated from the heat conductive substrate 21 to the holding body 12 by heat conduction. Since the holding body 12 is excellent in thermal conductivity and has a large heat capacity, it can dissipate heat generated by the light emitting unit 11. Further, as described above, the heat radiation of the light emitting unit 11 can be further promoted by air-cooling or liquid-cooling the holding body 12.
That is, in the second embodiment, the heat generated by the semiconductor light emitting element chip 64 mounted on the lighting device 10 can be efficiently dissipated, and an increase in the temperature of the lighting device 10 can be suppressed. Moreover, the light which the illuminating device 10 emits by rotating the illuminating device 10 can be equally irradiated to the plant 2 which is a cultivation object.
Moreover, since the heat conductive board | substrate 21 can be manufactured continuously, the illuminating device 10 is realizable at low cost.
In the second embodiment, the convex portion 21a is provided on the thermally conductive substrate 21, but the convex portion 21a may not be provided.

  In the second embodiment as well, the plurality of light emitting units 11 are connected to each other as in the first embodiment, so that illumination is not limited by the size of the heat conductive substrate 21 in the longitudinal direction. The apparatus 10 can be configured.

In addition, the shape of the conductor patterns 23a, 23b, 23c, 23d, and 23e of the wiring boards 22a and 22b is not limited to the shape shown in FIG. 11, and can be changed and used.
Furthermore, the number of the light emitting element packages 20 mounted on the lighting device 10 is not limited to eight, and can be changed and used.

[Third Embodiment]
In 3rd Embodiment, the structure of the light emission unit 11 differs from 1st Embodiment and 2nd Embodiment. In the first and second embodiments, the wiring boards 22a and 22b are used. In the third embodiment, instead of using the wiring boards 22a and 22b, an insulating sheet with copper foil (RCC: Resin Coated Copper Foil) is pasted on the heat conductive board 21.
The insulator sheet with copper foil is provided with a copper foil, and when the insulator side is thermocompression bonded to the heat conductive substrate 21, the insulator is melted and fixed to the heat conductive substrate 21.
FIG. 13 is a diagram illustrating an example of the light emitting unit 11 of the illumination device 10 to which the third embodiment is applied. FIG. 11A shows a plan view of the light emitting unit 11 as viewed from above, and FIG. 13B shows a cross-sectional view of the light emitting unit 11 taken along line XIIIB-XIIIB.
Below, the thermally conductive board | substrate 21 different from 1st Embodiment is demonstrated, the same thing attaches | subjects the same code | symbol and abbreviate | omits description.

Unlike the first and second embodiments, the thermally conductive substrate 21 in the third embodiment is not provided with a convex portion 21a. Therefore, the heat conductive substrate 21 is a strip-shaped flat plate.
Conductive patterns 23a, 23b, 23c, and 23d are provided on the heat conductive substrate 21 with an insulating layer 29 interposed therebetween. In addition, the conductor pattern 23f is provided also in the part corresponding to the convex part 21a in 1st Embodiment.

Next, a method for forming the conductor patterns 23a, 23b, 23c, 23d, and 23f on the heat conductive substrate 21 will be described.
The heat conductive substrate 21 is made of, for example, aluminum or an aluminum alloy, and the surface thereof is anodized. That is, the surface of the heat conductive substrate 21 is covered with an electrically insulating aluminum oxide film.
Next, an insulator sheet with a copper foil is attached to one surface of the thermally conductive substrate 21 and thermocompression bonded.
Then, the copper foil is processed into conductor patterns 23a, 23b, 23c, 23d, and 23f by conventionally known photolithography. Thereafter, a solder resist is applied, and openings 26a, 26b, 26c, 26d, 26e, 26f, and 26g are provided by conventionally known photolithography. The solder resist is made into a resist film 26 by thermosetting. Thereby, conductor pattern 23a, 23b, 23c, 23d, and 23f can be formed on the heat conductive board | substrate 21 with an insulator sheet with copper foil.
After that, as in the first embodiment, the light emitting unit 11 is configured by mounting the semiconductor light emitting element chip 64.

Also in the third embodiment, the semiconductor light emitting element chip 64 is bonded and fixed on the heat conductive substrate 21 having excellent heat conductivity. Therefore, the heat generated by the semiconductor light emitting element chip 64 is first dissipated to the heat conductive substrate 21 by heat conduction. Next, the heat generated by the semiconductor light emitting element chip 64 is dissipated from the heat conductive substrate 21 to the holding body 12 by heat conduction. Since the holding body 12 is excellent in thermal conductivity and has a large heat capacity, it can dissipate heat generated by the light emitting unit 11. Further, as described above, the heat radiation of the light emitting unit 11 can be further promoted by air-cooling or liquid-cooling the holding body 12.
That is, in the third embodiment, the heat generated by the semiconductor light emitting element chip 64 mounted on the lighting device 10 can be efficiently radiated, and the temperature rise of the lighting device 10 can be suppressed. Moreover, the light which the illuminating device 10 emits by rotating the illuminating device 10 can be equally irradiated to the plant 2 which is a cultivation object.
Moreover, since the heat conductive board | substrate 21 is a strip-shaped flat plate, the illuminating device 10 is realizable at low cost.

  Furthermore, in the third embodiment, the light emitting device package 20 shown in the second embodiment may be used instead of the semiconductor light emitting device chip 64.

[Fourth Embodiment]
In 4th Embodiment, the structure which can rotate the holding body 12 with a wind force differs from 1st Embodiment. In the first embodiment, the holding body 12 is rotated by the rotation shaft 13 from the rotation control unit 14.
FIG. 14 is a diagram showing a plant cultivation apparatus 1 to which the fourth embodiment is applied.
In the fourth embodiment, the rotation control unit 14 is an apparatus configured by an electric fan or the like that generates a downward wind force as an example of a blower device, and a propeller-like shape that gives a rotational force by wind force on the holding body 12. The wing structure 12f was installed.
The holding body 12 is rotated by the wing structure 12 f provided on the holding body 12 by wind power in the direction of arrow C created by the electric fan of the rotation control unit 14. By sending air whose temperature and humidity are adjusted from the electric fan, the plant growth environment can be made uniform, and at the same time, the light irradiation is made uniform and the heat release from the holding body 12 is promoted. It becomes the energy-saving type plant cultivation apparatus 1.
In addition, the electric fan may be attached to a wall and a wing structure 12f corresponding to the electric fan may be added to the holding body 12.
On the other hand, in the case of combined use with sunlight, the holder 12 may be rotated by natural wind instead of the electric fan.

DESCRIPTION OF SYMBOLS 1 ... Plant cultivation apparatus, 2 ... Plant, 10 ... Illumination device, 11 ... Light-emitting unit, 12 ... Holding body, 15 ... Bottom plate, 16 ... Support | pillar, 17 ... Top plate, 18 ... Power supply line, 19 ... Power supply, 20 ... Light emitting element package, 21 ... Thermally conductive substrate, 21a ... Projection, 22a, 22b ... Wiring substrate, 23a, 23b, 23c, 23d, 23e, 23f ... Conductor pattern, 24 ... Adhesive layer, 26 ... Resist film, 26a, 26b, 26c, 26d, 26e, 26f, 26g ... opening, 27 ... hole, 28a, 28b, 28c ... connection wiring, 29 ... insulating layer, 31 ... first sealing resin, 32 ... second sealing resin, 61 ... Resin container, 62a, 62b, 62c, 62d, 62e, 62f ... lead portion, 64, 64a, 64b, 64c, 64d ... semiconductor light emitting element chip, 65 ... bonding wire, 100 ... first laminated half Body layer 110 ... first substrate 140 ... first n-type semiconductor layer 140c ... exposed surface of semiconductor layer 150 ... first light emitting layer 160 ... first p-type semiconductor layer 170 ... transparent positive electrode 180 ... first protective layer , 210 ... first p electrode, 240 ... first n electrode, 310 ... second substrate, 320 ... second p-type contact layer, 330 ... second p-type semiconductor layer, 340 ... second light emitting layer, 350 ... second n-type semiconductor layer, 360 ... second protective layer, 400 ... second n electrode, 410 ... second p electrode, 641 ... blue light emitting chip, 642 ... red light emitting chip

Claims (12)

A lighting device for plant cultivation that irradiates light to a plant,
A light emitting unit comprising a heat conductive substrate having a rectangular surface shape, and a plurality of light emitting components arranged and mounted in the longitudinal direction of the heat conductive substrate;
An illuminating device for plant cultivation, comprising: a holder that is rotatable about an axis, and whose longitudinal direction of the light emitting unit is attached obliquely to the direction of the axis on the outer surface.   The lighting device for plant cultivation according to claim 1, wherein the thermally conductive substrate is made of a metal material.   The said holding body is comprised with the metal material, The illuminating device for plant cultivation of Claim 1 or 2 characterized by the above-mentioned.   The lighting device for plant cultivation according to any one of claims 1 to 3, wherein an outer surface of the holding body has an inclined surface with respect to the axis.   The holding body has an outer surface having an inclined surface with respect to the axis, and an area of a cut surface provided so as to be orthogonal to the axis is larger on the upper end side than on the lower end side. The lighting device for plant cultivation according to any one of claims 1 to 4.   The lighting device for plant cultivation according to any one of claims 1 to 5, wherein the holding body includes a concave portion or a convex portion for heat dissipation on at least one surface of an outer surface or an inner surface. .   The lighting device for plant cultivation according to any one of claims 1 to 5, wherein the holding body includes a hole or a notch for taking air into the surface.   The lighting for plant cultivation according to any one of claims 1 to 7, wherein the plurality of light emitting components include a semiconductor light emitting element that emits blue light and a semiconductor light emitting element that emits red light. apparatus.   The semiconductor light emitting device emitting blue light included in the plurality of light emitting components has an InGaN light emitting layer having a peak wavelength of 420 nm to 480 nm, and the semiconductor light emitting device emitting red light is an AlGaInP having a peak wavelength of 650 nm to 690 nm. The lighting device for plant cultivation according to claim 8, comprising a light emitting layer.   The semiconductor light emitting element that emits blue light and the semiconductor light emitting element that emits red light included in the plurality of light emitting components are a semiconductor light emitting element that emits blue light and a semiconductor light emitting element that emits red light, respectively. The P electrode and the N electrode are provided on one surface of each of the semiconductor light emitting devices, and the semiconductor light emitting device that emits blue light and the semiconductor light emitting device that emits red light each have either a P electrode or an N electrode. It does not have, The illuminating device for plant cultivation of Claim 8 or 9 characterized by the above-mentioned. A cultivation container for accommodating a plurality of plants to be cultivated;
A light emitting unit including a thermally conductive substrate having a rectangular surface shape and a plurality of light emitting components arranged and mounted in the longitudinal direction of the thermally conductive substrate, so as to face a plurality of growing plants. And a holder that is rotatable about an axis, and whose longitudinal direction of the light emitting unit is attached to the outer surface at an angle with respect to the direction of the axis, and which emits light from the plurality of light emitting components A plant cultivation apparatus provided with the illuminating device which irradiates a plant. A cultivation container for accommodating a plurality of plants to be cultivated;
A light emitting unit including a thermally conductive substrate having a rectangular surface shape and a plurality of light emitting components arranged and mounted in the longitudinal direction of the thermally conductive substrate, so as to face a plurality of growing plants. A holding body that is rotatable around an axis and whose longitudinal direction of the light emitting unit is obliquely mounted on the outer surface with respect to the direction of the axis, and a blower that rotates the holding body by wind power And a lighting device that irradiates the plant with light emitted from the plurality of light-emitting components.

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