JP5492679B2 - 記憶装置およびメモリコントローラ - Google Patents

記憶装置およびメモリコントローラ Download PDF

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Publication number
JP5492679B2
JP5492679B2 JP2010147835A JP2010147835A JP5492679B2 JP 5492679 B2 JP5492679 B2 JP 5492679B2 JP 2010147835 A JP2010147835 A JP 2010147835A JP 2010147835 A JP2010147835 A JP 2010147835A JP 5492679 B2 JP5492679 B2 JP 5492679B2
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JP
Japan
Prior art keywords
data
scramble
physical
nonvolatile memory
address
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JP2010147835A
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English (en)
Japanese (ja)
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JP2011028741A5 (enExample
JP2011028741A (ja
Inventor
利行 本多
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2010147835A priority Critical patent/JP5492679B2/ja
Publication of JP2011028741A publication Critical patent/JP2011028741A/ja
Publication of JP2011028741A5 publication Critical patent/JP2011028741A5/ja
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Publication of JP5492679B2 publication Critical patent/JP5492679B2/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
JP2010147835A 2009-06-30 2010-06-29 記憶装置およびメモリコントローラ Active JP5492679B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010147835A JP5492679B2 (ja) 2009-06-30 2010-06-29 記憶装置およびメモリコントローラ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009154962 2009-06-30
JP2009154962 2009-06-30
JP2010147835A JP5492679B2 (ja) 2009-06-30 2010-06-29 記憶装置およびメモリコントローラ

Publications (3)

Publication Number Publication Date
JP2011028741A JP2011028741A (ja) 2011-02-10
JP2011028741A5 JP2011028741A5 (enExample) 2013-07-04
JP5492679B2 true JP5492679B2 (ja) 2014-05-14

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ID=43535663

Family Applications (1)

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JP2010147835A Active JP5492679B2 (ja) 2009-06-30 2010-06-29 記憶装置およびメモリコントローラ

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US (1) US20110035539A1 (enExample)
JP (1) JP5492679B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120002760A (ko) * 2010-07-01 2012-01-09 삼성전자주식회사 낸드 플래쉬 메모리의 동작 신뢰성을 향상시키는 데이터 기록 방법 및 데이터 기록 장치
WO2012117263A1 (en) * 2011-03-02 2012-09-07 Sandisk Il Ltd. Method of data storage in non-volatile memory
US11048410B2 (en) 2011-08-24 2021-06-29 Rambus Inc. Distributed procedure execution and file systems on a memory interface
WO2013028849A1 (en) 2011-08-24 2013-02-28 Rambus Inc. Methods and systems for mapping a peripheral function onto a legacy memory interface
US9098209B2 (en) 2011-08-24 2015-08-04 Rambus Inc. Communication via a memory interface
JP2013069183A (ja) * 2011-09-26 2013-04-18 Toshiba Corp コントローラおよびメモリシステム
KR20130036556A (ko) * 2011-10-04 2013-04-12 에스케이하이닉스 주식회사 반도체 장치 및 이의 동작 방법
KR20130049332A (ko) * 2011-11-04 2013-05-14 삼성전자주식회사 메모리 시스템 및 그것의 동작 방법
KR20140057454A (ko) * 2012-11-02 2014-05-13 삼성전자주식회사 비휘발성 메모리 장치 및 이와 통신하는 호스트 장치
TWI509622B (zh) * 2013-07-09 2015-11-21 Univ Nat Taiwan Science Tech 具分散錯誤功能的記憶體及其分散錯誤位元的方法
WO2015022741A1 (ja) 2013-08-15 2015-02-19 ルネサスエレクトロニクス株式会社 半導体装置
US9336401B2 (en) 2014-01-20 2016-05-10 International Business Machines Corporation Implementing enhanced security with storing data in DRAMs
CN103777904B (zh) * 2014-02-12 2017-07-21 威盛电子股份有限公司 数据储存装置以及数据加扰与解扰方法
US9355732B2 (en) 2014-10-01 2016-05-31 Sandisk Technologies Inc. Latch initialization for a data storage device
US9653185B2 (en) * 2014-10-14 2017-05-16 International Business Machines Corporation Reducing error correction latency in a data storage system having lossy storage media
KR102636039B1 (ko) 2016-05-12 2024-02-14 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 읽기 방법 및 카피백 방법
US11462278B2 (en) * 2020-05-26 2022-10-04 Samsung Electronics Co., Ltd. Method and apparatus for managing seed value for data scrambling in NAND memory
US12334138B2 (en) * 2022-08-30 2025-06-17 Micron Technology, Inc. Dynamic address scramble
KR20240062803A (ko) * 2022-11-02 2024-05-09 삼성전자주식회사 메모리 컨트롤러 및 이를 포함하는 메모리 시스템
JP2024137148A (ja) * 2023-03-24 2024-10-07 株式会社東芝 磁気ディスク装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1541349A (zh) * 2000-09-15 2004-10-27 �ʼҷ����ֵ������޹�˾ 把数据块地址作为加密密钥进行保护
CN1838328A (zh) * 2005-01-19 2006-09-27 赛芬半导体有限公司 擦除存储器阵列上存储单元的方法
US8370561B2 (en) * 2006-12-24 2013-02-05 Sandisk Il Ltd. Randomizing for suppressing errors in a flash memory
JP4498370B2 (ja) * 2007-02-14 2010-07-07 株式会社東芝 データ書き込み方法
JP5028577B2 (ja) * 2007-02-19 2012-09-19 株式会社メガチップス メモリ制御方法およびメモリシステム
JP2008217857A (ja) * 2007-02-28 2008-09-18 Toshiba Corp メモリコントローラ及び半導体装置
US8230158B2 (en) * 2008-08-12 2012-07-24 Micron Technology, Inc. Memory devices and methods of storing data on a memory device
JP2010108029A (ja) * 2008-10-28 2010-05-13 Panasonic Corp 不揮発性メモリコントローラ、不揮発性記憶装置、及び不揮発性記憶システム
US8589700B2 (en) * 2009-03-04 2013-11-19 Apple Inc. Data whitening for writing and reading data to and from a non-volatile memory

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US20110035539A1 (en) 2011-02-10
JP2011028741A (ja) 2011-02-10

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