JP5486026B2 - リソグラフィプロセスの最適化方法 - Google Patents
リソグラフィプロセスの最適化方法Info
- Publication number
- JP5486026B2 JP5486026B2 JP2012018234A JP2012018234A JP5486026B2 JP 5486026 B2 JP5486026 B2 JP 5486026B2 JP 2012018234 A JP2012018234 A JP 2012018234A JP 2012018234 A JP2012018234 A JP 2012018234A JP 5486026 B2 JP5486026 B2 JP 5486026B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- feature
- pattern
- variables
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Description
1. ステップモードでは、マスクテーブルMTおよび基板テーブルWTが、実質的に静止状態に保たれ、放射ビームに与えられた全パターンが、一度でターゲット部分C上に投影される(すなわち単一静止露光)。次いで、基板テーブルWTは、別のターゲット部分Cを露光することが可能となるように方向および/またはY方向にシフトされる。ステップモードでは、露光フィールドの最大サイズが、単一静止露光においてイメージングされるターゲット部分Cのサイズを限定する。
2. スキャンモードでは、マスクテーブルMTおよび基板テーブルWTが、同期してスキャンされ、放射ビームに与えられたパターンが、ターゲット部分C上に投影される(すなわち単一動的露光)。マスクテーブルMTに対する基板テーブルWTの速度および方向は、投影システムPSの拡大率(縮小率)および像反転特性により決定することができる。スキャンモードでは、露光フィールドの最大サイズが、単一動的露光におけるターゲット部分の(非スキャニング方向の)幅を限定し、スキャニング動作の長さが、ターゲット部分の(スキャニング方向の)高さを決定する。
3. 別のモードでは、マスクテーブルMTが、プログラマブルパターニングデバイスを保持しつつ実質的に静的状態に保たれ、基板テーブルWTが、移動されまたはスキャンされるとともに、放射ビームに与えられたパターンが、ターゲット部分C上に投影される。このモードでは、一般的にはパルス放射源が使用され、プログラマブルパターニングデバイスは、基板テーブルWTの各移動の後で、またはスキャン中の連続放射パルスの間に、必要に応じて更新される。この作動モードは、上述のタイプのプログラマブルミラーアレイなどのプログラマブルパターニングデバイスを使用するマスクレスリソグラフィに容易に応用することが可能である。
となり、ここで
(結論)
Claims (4)
- リソグラフィプロセスを最適化する方法において、
複数の第1のフィーチャおよび第2のフィーチャを製造することであって、前記第2のフィーチャおよび前記第1のフィーチャは、交互に並び、それぞれの前記第1のフィーチャは、その一方側において、第1のスペースによって第2のフィーチャから隔離され、他方側において、第2のスペースによって第2のフィーチャから隔離され、前記第1のフィーチャは、クリティカルディメンションL1を有し、前記第2のフィーチャは、クリティカルディメンションL2を有し、前記第1のスペースは、クリティカルディメンションS1を有し、前記第2のスペースは、クリティカルディメンションS2を有し、L1、L2、S1、およびS2は、特性であり、前記複数の第1のフィーチャおよび第2のフィーチャの製造プロセスは、前記フィーチャおよび前記スペースの特性に影響を及ぼす変数を有する、複数の第1のフィーチャおよび第2のフィーチャを製造すること、
前記特性を測定すること、
a*(S1−S2)を最小化することによって、前記変数を最適化することであって、ここで、aは重み係数であり、a={(σ S1,est ) 2 −(σ S2,est ) 2 σ+(σ sys,Lx ) 2 }/2(σ sys,Lx ) 2 であり、(σ S1,est ) 2 は、S1の標準偏差であり、(σ S2,est ) 2 は、S2の標準偏差であり、(σ sys,Lx ) 2 は、前記フィーチャL1およびL2の前記クリティカルディメンションの標準偏差である、前記変数を最適化すること、および、
前記最適化された変数を用いて、複数の第1のフィーチャおよび第2のフィーチャを製造すること、
を含む
方法。 - 前記変数を最適化することが、a*(S1−S2)に代えて、S1+a*(L1+L2)を最小化することによって行われる、請求項1に記載の方法。
- aは、履歴データを用いて決定される、
請求項1又は2に記載の方法。 - aは、0.5ではない、
請求項1又は2に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19381308P | 2008-12-24 | 2008-12-24 | |
US61/193,813 | 2008-12-24 | ||
US25281109P | 2009-10-19 | 2009-10-19 | |
US61/252,811 | 2009-10-19 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009280123A Division JP5016662B2 (ja) | 2008-12-24 | 2009-12-10 | 最適化方法およびリソグラフィセル |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012084928A JP2012084928A (ja) | 2012-04-26 |
JP5486026B2 true JP5486026B2 (ja) | 2014-05-07 |
Family
ID=42267244
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009280123A Expired - Fee Related JP5016662B2 (ja) | 2008-12-24 | 2009-12-10 | 最適化方法およびリソグラフィセル |
JP2012018234A Active JP5486026B2 (ja) | 2008-12-24 | 2012-01-31 | リソグラフィプロセスの最適化方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009280123A Expired - Fee Related JP5016662B2 (ja) | 2008-12-24 | 2009-12-10 | 最適化方法およびリソグラフィセル |
Country Status (6)
Country | Link |
---|---|
US (1) | US8612045B2 (ja) |
JP (2) | JP5016662B2 (ja) |
KR (1) | KR101169009B1 (ja) |
CN (1) | CN101762988B (ja) |
NL (1) | NL2003919A (ja) |
TW (1) | TWI480923B (ja) |
Families Citing this family (11)
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NL2009982A (en) | 2012-01-10 | 2013-07-15 | Asml Netherlands Bv | Source mask optimization to reduce stochastic effects. |
US9811002B2 (en) | 2013-07-19 | 2017-11-07 | Asml Netherlands B.V. | Determination and application of non-monotonic dose sensitivity |
NL2013751A (en) * | 2013-12-18 | 2015-06-22 | Asml Netherlands Bv | Inspection method and apparatus, and lithographic apparatus. |
KR102330321B1 (ko) | 2014-12-12 | 2021-11-23 | 에이에스엠엘 네델란즈 비.브이. | 기판 모델 파라미터를 계산하고 리소그래피 처리를 제어하기 위한 방법 및 장치 |
WO2016207891A1 (en) * | 2015-06-22 | 2016-12-29 | Nova Measuring Instruments Ltd. | Method for use in process control of manufacture of patterned samples |
US10386829B2 (en) | 2015-09-18 | 2019-08-20 | Kla-Tencor Corporation | Systems and methods for controlling an etch process |
KR20180115299A (ko) * | 2016-02-22 | 2018-10-22 | 에이에스엠엘 네델란즈 비.브이. | 계측 데이터에 대한 기여도들의 분리 |
EP3290911A1 (en) | 2016-09-02 | 2018-03-07 | ASML Netherlands B.V. | Method and system to monitor a process apparatus |
EP3415988A1 (en) * | 2017-06-14 | 2018-12-19 | ASML Netherlands B.V. | Device manufacturing methods |
CN112189255B (zh) * | 2018-03-20 | 2024-05-28 | 东京毅力科创株式会社 | 自对准多重图案化的方法和半导体加工方法 |
TWI729334B (zh) * | 2018-06-07 | 2021-06-01 | 荷蘭商Asml荷蘭公司 | 用於判定器件之控制方案的方法、電腦程式和系統及用於判定多個器件處理之基板的方法 |
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2009
- 2009-12-08 NL NL2003919A patent/NL2003919A/en not_active Application Discontinuation
- 2009-12-08 US US12/633,252 patent/US8612045B2/en not_active Expired - Fee Related
- 2009-12-10 JP JP2009280123A patent/JP5016662B2/ja not_active Expired - Fee Related
- 2009-12-21 TW TW098143952A patent/TWI480923B/zh not_active IP Right Cessation
- 2009-12-22 CN CN2009102622728A patent/CN101762988B/zh active Active
- 2009-12-23 KR KR1020090130229A patent/KR101169009B1/ko active IP Right Grant
-
2012
- 2012-01-31 JP JP2012018234A patent/JP5486026B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR101169009B1 (ko) | 2012-07-27 |
JP2012084928A (ja) | 2012-04-26 |
NL2003919A (en) | 2010-06-28 |
TWI480923B (zh) | 2015-04-11 |
JP5016662B2 (ja) | 2012-09-05 |
JP2010166034A (ja) | 2010-07-29 |
CN101762988B (zh) | 2012-11-14 |
US8612045B2 (en) | 2013-12-17 |
US20100161099A1 (en) | 2010-06-24 |
KR20100075411A (ko) | 2010-07-02 |
CN101762988A (zh) | 2010-06-30 |
TW201117259A (en) | 2011-05-16 |
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